CN110058512B - Lattice field device capable of realizing power enhancement, phase adjustment and locking - Google Patents
Lattice field device capable of realizing power enhancement, phase adjustment and locking Download PDFInfo
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- CN110058512B CN110058512B CN201910295409.3A CN201910295409A CN110058512B CN 110058512 B CN110058512 B CN 110058512B CN 201910295409 A CN201910295409 A CN 201910295409A CN 110058512 B CN110058512 B CN 110058512B
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- G04F5/14—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks
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Abstract
The invention provides a lattice field device capable of realizing power enhancement, phase adjustment and locking, which comprises a laser, a vacuum cavity, a planoconcave mirror and a phase adjuster, wherein two opposite sides of the vacuum cavity are respectively provided with a transparent window, and a cold atom sample is placed in the vacuum cavity; the plano-concave mirrors are respectively arranged outside the transparent windows, and the concave surfaces are opposite; the laser emitted by the laser sequentially passes through one of the planoconcave mirrors, the transparent window, the cold atom sample and the transparent window and is reflected by the other planoconcave mirror in the original path, so that the laser is coherently superposed at the cold atom sample for multiple times; the other plano-concave mirror can move along the laser light path under the driving of the phase adjuster. The invention can realize the phase adjustment and locking of the lattice field, and the device is simple and small.
Description
Technical Field
The invention belongs to the technical field of cold atoms, and particularly relates to a lattice field device.
Background
The atomic optical clock as the latest international generation of reference atomic clock has ultrahigh frequency accuracy and stability. The atomic optical clock provides a high-precision optical frequency standard source through the preparation of an ultra-cold atom sample, the loading of optical lattices is a very critical step in the preparation of the cold atom sample, the number, the density and the stability of atoms loaded by the optical lattices directly influence the signal-to-noise ratio of a clock transition spectral line, and further influence the final stability of the optical clock.
The lattice field of the atomic optical clock is built, and the required laser optical power is very high, so that enough trap depth can be realized to imprison cold atoms. At present, a titanium sapphire laser or a semiconductor laser with a TA (time alignment) amplification structure is generally adopted as a laser for establishing a light lattice in an optical clock system, so that high-power laser output is obtained, and experimental requirements are met. Usually, the optical lattice is built up by a lens and a lens + mirror, as shown in fig. 1, which not only has poor stability and tunability, but also increases the complexity of the system. Therefore, in order to reduce the size of the laser, reduce the complexity of the system, and increase the adjustability and stability of the system, it is important to provide a lattice field device that can achieve power enhancement, phase adjustment, and locking.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a lattice field device which can realize power enhancement, phase adjustment and locking, can realize phase adjustment and locking of a lattice field, and is simple and small.
The technical scheme adopted by the invention for solving the technical problems is as follows: a lattice field device capable of realizing power enhancement, phase adjustment and locking comprises a laser, a vacuum cavity, a plano-concave mirror and a phase adjuster.
Two opposite sides of the vacuum cavity are respectively provided with a transparent window, and the cold atom sample is placed in the vacuum cavity; the plano-concave mirrors are respectively arranged outside the transparent windows, and the concave surfaces are opposite; the laser emitted by the laser sequentially passes through one of the planoconcave mirrors, the transparent window, the cold atom sample and the transparent window and is reflected by the other planoconcave mirror in the original path, so that the laser is coherently superposed at the cold atom sample for multiple times; the other plano-concave mirror can move along the laser light path under the driving of the phase adjuster.
The laser is a tunable semiconductor laser without a TA amplifying structure.
The curvature radiuses of the two plano-concave mirrors are equal.
In the planoconcave, a silicon dioxide antireflection film and a zirconium dioxide antireflection film are alternately evaporated on the concave surface of the laser-transmitted planoconcave in vacuum, and 10-12 layers are alternately evaporated in vacuum in total; and (3) alternately evaporating magnesium fluoride high-reflection films and calcium fluoride high-reflection films in vacuum on the concave surface of the laser-reflective planoconvex mirror, and alternately evaporating 10-15 layers in vacuum.
The phase regulator adopts an S-303.OL phase regulator, the maximum stroke is 3 mu m, and the repetition precision is 0.7 nm.
The phase adjuster moves or locks the position under the drive of the control unit.
The invention has the beneficial effects that: the optical lattice has the performance of amplifying the power gain of the incident laser, and can adjust and lock the phase of the lattice field, finally improve the number and density of the atoms loaded in the lattice field and realize the strongest stable constraint of the optical lattice on the strontium atoms. The complexity of the lattice field laser light source and the system is greatly simplified, and the stability of the lattice field is further improved.
The light intensity of the lattice laser is increased, and the depth of the trapping potential well and the light intensity are in a linear relation according to a calculation formula of the depth of the potential well. Therefore, when the light intensity at the lattice light waist spot is increased, the depth of the potential trap is linearly increased correspondingly. Ensuring a certain depth of potential well, if the gain cavity is used, the incident light power will be greatly reduced. The trapping potential well at the position of the laser minimum light spot, namely the waist spot is deepest, so that the strongest constraint on cold atoms can be realized after the positions of the lattice laser waist spot and the cold atom sample are superposed. Laser beams emitted by the laser pass through the plano-concave mirror M1 and the vacuum device and then reach the plano-concave mirror M2, the plano-concave mirror M1 and the plano-concave mirror M2 form a symmetrical non-confocal cavity, incident laser can be reflected back and forth in the linear gain cavity, and in-phase coherent superposition is adopted, so that the intensity of an optical field in the cavity is larger than that of input light. Further, the phase adjuster behind the plano-concave mirror M2 is finely adjusted, so that the beam waist of the incident laser and the reflected laser is completely superposed with the cold atom sample, and the strongest restraint of the atom group is realized. Therefore, the power amplification of the incident laser is realized by using the invention, on one hand, the incident power of the optical lattice light source is greatly reduced, the laser light intensity at the laser waist spot is enhanced, and the phase of the reflected light is further changed by the phase adjuster, so that the beam waist of the reflected light back and forth is well superposed with the position of the cold atom sample, the atom number and the density are obviously improved, and the strongest constraint of the optical lattice on strontium atoms is realized; on the other hand, a TA amplifying structure or other power amplifying methods are not needed after the laser is output, the size of the laser is reduced, and the complexity of the system is reduced.
Drawings
FIG. 1 is a schematic diagram of the prior art;
FIG. 2 is a schematic structural diagram of an embodiment of the present invention;
in the figure, 1-laser, 2-vacuum device, 3-plano-concave mirror M1, 4-plano-concave mirror M2, 5-phase regulator, 6-control unit, 7-atom heating furnace, 8-cold atom sample, 9-EMCCD, 10-mounting plate.
Detailed Description
The present invention will be further described with reference to the following drawings and examples, which include, but are not limited to, the following examples.
The invention overcomes the defects of large output power of a lattice light laser light source and overlarge laser volume required by loading optical lattices in an optical clock system, simultaneously realizes the phase adjustment and locking of a lattice field, ensures that incident light and reflected light can be well superposed, realizes coherent superposition of the same phase, finally completes the construction of a stable lattice standing wave field, can be widely applied to various neutral atomic optical clocks, obtains cold atomic samples with large number and density in optical lattices, and improves the signal-to-noise ratio of optical clock transition signals.
The technical scheme of the invention is as follows:
the laser, vacuum and cold atom sample are arranged on the mounting plate, the laser emitting of the laser is perpendicular to a flange window of the vacuum, a flat concave mirror M1 is arranged on one side of the flange window, the same flat concave mirror M2 is also arranged on the other side of the flange window, and the structure similar to an F-P linear gain cavity is formed. The laser power enhancement amplifying device of the invention is as follows: the laser passes through the linear gain cavity, and is subjected to coherent superposition for many times in the cavity, so that the power amplification effect of the incident laser light is realized. A phase regulator is arranged on a plano-concave mirror M2, the phase regulator is externally connected with a control unit, the control unit drives the phase regulator to move in a stretching mode in the horizontal direction through an internal or external input control signal, the maximum stroke of the phase regulator is 3 micrometers, the precision can be controlled to be 0.7nm, the plano-concave mirror M2 is driven to realize micro position movement, the phase of reflected light is further changed, after waist spots of incident laser and reflected laser are completely overlapped, light lattices can be observed from an EMCCD (electron-multiplying charge coupled device), the brightness of the light lattices reaches the brightest, then the M2 plano-concave mirror is locked through a PID (proportion integration differentiation) feedback circuit in the control unit, and therefore the control and the locking of the laser phase are completed.
The laser is a tunable semiconductor laser without a TA amplifying structure.
The radii of curvature of the plano-concave mirror M1 and the plano-concave mirror M2 of the present invention are equal.
The antireflection film on the mirror surface of the planoconvex mirror M1 subjected to vacuum alternate evaporation is silicon dioxide and zirconium dioxide, 10-12 layers are subjected to vacuum alternate evaporation, the transmissivity is 99.98%, namely the reflectivity is 0.02%; the high-reflection film evaporated on the mirror surface of the planoconcave mirror M2 in vacuum is magnesium fluoride and calcium fluoride, 10-15 layers are evaporated in vacuum alternately, and the transmissivity is 0.01%, namely the reflection is 99.99%.
The maximum stroke of the S-303.OL phase regulator is 3 μm, and the repetition precision is 0.7 nm.
As shown in fig. 2, the lattice field device capable of achieving power enhancement and phase adjustment provided by the present invention is formed by connecting a laser 1, a vacuum device 2, an M1 plano-concave mirror 3, an M2 plano-concave mirror 4, a phase adjuster 5, a control unit 6, an atomic heating furnace 7, a cold atom sample 8, an EMCCD9, and a mounting board 10.
The mounting plate 10 is fixedly connected with a laser 1, a vacuum device 2 and an atom heating furnace 7 by a thread fastening connector, and a cold atom sample 8 is arranged at the geometric center of the vacuum device 2. The laser 1, the vacuum device 2, the atom heating furnace 7 and the EMCCD9 are located in the same horizontal plane, the laser 1 provides a laser source for the invention, the laser passes through the M1 plano-concave mirror 3 and the cold atom sample 8 at the geometric center of the vacuum device 2 and is further reflected by the M2 plano-concave mirror 4, the laser is reflected back and forth in a linear gain cavity formed by the M1 plano-concave mirror 3 and the M2 plano-concave mirror 4, finally the incident laser power is gain amplified, the phase of the reflected light is changed by the phase adjuster 5 and the control unit 6, whether the beam waist of the laser is located at the position of the cold atom sample 8 or not can be determined by observing the image and the brightness of the lattice loading atomic group on the EMCCD9, if the brightness is brightest at the moment, the laser beam waist reflected back and forth is well coincided with the cold atom sample 8, and the phase adjuster 5 can be locked.
Compared with the original optical lattice building technology, the technology of the invention can realize laser power amplification by 50 times (namely, the cavity gain is 50 times, and the loss in the cavity is 0.01), and realize phase tuning and locking of a lattice field. Taking strontium atomic clock as an example, when the depth of the optical lattice well is 95 μ K, the input power of the original 813nm laser is 840mW, the waist spot size is 38 μm, and for the standing wave field, the laser intensity is 37.5kW/cm2If the linear gain cavity (cavity gain is 50 times) is selected, when the gain cavity length L is 200mm and the 813nm laser input power is 117mW, the waist spot is 50 μm and the trap depth is 95 μmK corresponding to a light intensity of 74.25kW/cm2(ii) a When the gain cavity length L is 500mm and the input power of 813nm laser is 191mW, the optical lattice with waist spot of 64 μm and well depth of 95 μ K can be realized, and the corresponding light intensity is 74.5kW/cm2。
Claims (6)
1. A lattice field device capable of realizing power enhancement, phase adjustability and locking comprises a laser, a vacuum cavity, a plano-concave mirror and a phase adjuster, and is characterized in that: two opposite sides of the vacuum cavity are respectively provided with a transparent window, and the cold atom sample is placed in the vacuum cavity; the plano-concave mirrors are respectively arranged outside the transparent windows, and the concave surfaces are opposite; the laser emitted by the laser sequentially passes through one of the planoconcave mirrors, the transparent window, the cold atom sample and the transparent window and is reflected by the other planoconcave mirror in the original path, so that the laser is coherently superposed at the cold atom sample for multiple times; the other plano-concave mirror can move along the laser light path under the driving of the phase adjuster.
2. The lattice field device of claim 1, wherein: the laser is a tunable semiconductor laser without a TA amplifying structure.
3. The lattice field device of claim 1, wherein: the curvature radiuses of the two plano-concave mirrors are equal.
4. The lattice field device of claim 1, wherein: in the planoconcave, a silicon dioxide antireflection film and a zirconium dioxide antireflection film are alternately evaporated on the concave surface of the laser-transmitted planoconcave in vacuum, and 10-12 layers are alternately evaporated in vacuum in total; and (3) alternately evaporating magnesium fluoride high-reflection films and calcium fluoride high-reflection films in vacuum on the concave surface of the laser-reflective planoconvex mirror, and alternately evaporating 10-15 layers in vacuum.
5. The lattice field device of claim 1, wherein: the phase regulator adopts an S-303.OL phase regulator, the maximum stroke is 3 mu m, and the repetition precision is 0.7 nm.
6. The lattice field device of claim 1, wherein: the phase adjuster moves or locks the position under the drive of the control unit.
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| CN113075874B (en) * | 2021-03-23 | 2022-02-18 | 中国科学院精密测量科学与技术创新研究院 | Device for improving uncertainty of radiation frequency shift of atomic optical lattice blackbody |
| CN113296384B (en) * | 2021-06-10 | 2022-04-08 | 中国科学院国家授时中心 | Dual light-adjustable lattice device for space light clock |
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| CN108872178A (en) * | 2018-08-09 | 2018-11-23 | 中国科学院国家授时中心 | Optical lattice imaging device |
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| JP2001343582A (en) * | 2000-05-30 | 2001-12-14 | Nikon Corp | Projection optical system, exposure device with the same, manufacturing method of microdevice using the exposure device |
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| EP0601567A2 (en) * | 1992-12-08 | 1994-06-15 | Sony Corporation | Optical pickup device for magneto-optical recording and reproducing system |
| EP2420886A1 (en) * | 2009-04-16 | 2012-02-22 | Nalux Co. Ltd. | Terahertz electromagnetic wave generating element |
| CN101938086A (en) * | 2010-08-25 | 2011-01-05 | 南京大学 | Method for constructing cascade superlattice mode-locked laser |
| CN104242040A (en) * | 2014-09-25 | 2014-12-24 | 南京大学 | Non-linear Cerenkov radiation light source based on doped optical superlattice |
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