CN200959480Y - 2 um-bonded monoblock and single longitudinal mode non-planar laser - Google Patents
2 um-bonded monoblock and single longitudinal mode non-planar laser Download PDFInfo
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- CN200959480Y CN200959480Y CN 200620120648 CN200620120648U CN200959480Y CN 200959480 Y CN200959480 Y CN 200959480Y CN 200620120648 CN200620120648 CN 200620120648 CN 200620120648 U CN200620120648 U CN 200620120648U CN 200959480 Y CN200959480 Y CN 200959480Y
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Abstract
A 2 mu m bonding monolithic non-plane single longitudinal mode laser apparatus uses the doped crystals and the non-doped crystals to form a non-plane ring cavity, the utility model uses the structure of the non-plane ring cavity which differently wastes different intrinsic polarized lights to ensure that only the intrinsic polarized light with least loss positions in the laser cavity to realize the unidirectional traveling wave oscillation thus getting the single longitudinal mode laser output. The method not only has advantages of monolithic, good stability and small frequency and power noise, but also solves the serious problems that the 2 mu m laser apparatus can difficultly get the good optical uniformity large aperture crystal and that the laser crystal seriously reabsorbs the 2 mu m wave band, using the semiconductor with the advantage of the same wavelength of the emitting wave and the laser crystal absorbing wave can realize the stable output of the 2 mu m single longitudinal mode laser output.
Description
Technical field
The utility model belongs to laser technology field.
Background technology
2 mu m waveband laser devices have the important application prospect in fields such as laser medicine and laser radar, laser rangings.Because there is the absworption peak of a plurality of water in 2 mu m wavebands, and contain a large amount of moisture in the tissue, therefore utilize 2 mu m waveband lasers can realize the precision of biological tissue is cut, also can be used as the accurate Medical Instruments that the doctor excises cartilage and other sclerous tissueses.Simultaneously, 2 mu m waveband laser devices also have important use to be worth in target acquisition fields such as laser radar, laser ranging, can be used as CO in coherent Doppler wind-observation radar, range finder using laser, the air
2Light source with water vapour content instrumentation radar etc.
People need 2 mu m waveband solid state lasers of single longitudinal mode running in majority is used.According to present technology, the mode that can realize solid state laser single longitudinal mode running mainly contains and adds F-P standard general laws in microplate chamber method, the chamber, reverses die cavity method and annular chamber method.Wherein monoblock and non-planar annular chamber method is the technical scheme of the good realization laser single longitudinal mode running of best performance, its basic thought is that the several optical surfaces with the monolithic gain media are processed into the reflecting surface that has different orientation in the space, after the several reflectings surface reflections of oscillation light process in monolithic crystal, form closed loop, utilize of the effect of each reflecting surface to the additional phase shift and the externally-applied magnetic field of incident light, make along the s of forward and backpropagation, p intrinsic polarised light has different losses, guarantee the only intrinsic polarised light of lossy minimum realization unidirectional traveling wave vibration in the laser cavity, thereby obtain single longitudinal mode laser output.Its principle is similar to the unidirectional traveling wave plane annular chamber that adds faraday's optical-unidirectional device, but owing to adopted the nonplanar structure form, can finish laser generation in the monolithic laser crystal.
The advantage of on-plane surface unidirectional traveling wave annular cavity laser is that monolithicization, good stability, frequency and power noise are little, and its major defect is the design complexity of on-plane surface monolithic crystal, and processing acquires a certain degree of difficulty, and needs the laser crystal material of large-size.For employing monoblock and non-planar annular chamber is realized 2 μ m, crystalline material is (as Tm:YAG, Tm:LuAG, Tm, Ho:YAG, Ho:YAG etc.) the difficult good heavy caliber crystal of optical homogeneity that obtains, crystal is serious to the absorption again of 2 mu m wavebands, and these have all limited the high-efficient operation of 2 μ m monoblock and non-planar annular cavity lasers.For the monoblock and non-planar annular chamber mode of utilizing function admirable realizes the vibration of 2 mu m waveband single longitudinal mode lasers, reduce device cost simultaneously, employing forms the monoblock and non-planar crystal that satisfies the single longitudinal mode laser oscillating condition with 2 μ m crystalline materials and the diffusion interlinked mode of undoped YAG crystal by adopting, not only solved difficulty of processing but also reduced crystal and absorbed again, adopt the emission wavelength semiconductor laser consistent (LD) pumping source simultaneously, realize the single longitudinal mode laser output of 2 mu m wavebands with the laser crystal absorbing wavelength.
Summary of the invention
The purpose of this utility model is to provide a kind of nonplanar ring cavity laser that can produce the running of 2 mu m waveband single longitudinal mode lasers.To achieve these goals, the utility model is by the following technical solutions: a kind of 2 μ m monoblock and non-planar longitudinal-mode lasers, and this laser comprises: monoblock and non-planar laser crystal (1), magnetic field (11), the semiconductor laser (13) of semiconductor laser or optical fiber coupling output, temperature sensor (14), thermoelectric cooling module (15), fin (16), pump light coupling optical system (17), thermometric platinum resistance (18), thermoelectric cooling module (19), filter (20), LD drive source (29), semiconductor laser temperature control system (30), monolithic laser crystal attemperating unit (31).Wherein, on-plane surface laser crystal (1) is made of jointly doping laser crystal (1a) and non-doped crystal (1b), on-plane surface laser crystal (1) adopts the monoblock and non-planar ring cavity structure, and this structure is by three fully reflecting surfaces and the on-plane surface polyhedron that the plane of incidence forms.Faraday effect and laser crystal end face coating that the phase delay that fully reflecting surface causes in the monoblock and non-planar ring cavity structure, magnetic field produce, make the polarised light of different eigenstates have different losses, thereby guarantee the only intrinsic polarised light of lossy minimum realization unidirectional traveling wave laser generation in the annular chamber.The pump light (9) of semiconductor laser in the laser (13) output focuses on monoblock and non-planar laser crystal (1) after coupling optical system (17) shaping, realization laser generation is also exported after filter (20) filters pump light.In order to guarantee the steady running of laser, monoblock and non-planar loop laser crystal be fixed on heat sink on, sticking thermometric platinum resistance (18) and thermoelectric cooling module (19) are used for controlling crystal temperature effect on the surface.
In a preferred version of the present utility model, be processed into monoblock and non-planar laser crystal (1) by diffusion interlinked mode between doping laser crystal (1a) and the non-doped crystal (1b), crystal end-face (2) is not only as the plane of incidence of pump light (9) but also as the output coupling surface, be coated with, p light high saturating reflectance coating high anti-on it and to the anti-reflection anti-reflection film of pump light to outgoing wavelength s polarised light, the magnetic field of the vertical crystal end-face of installation direction (2), magnetic field intensity is elected as between 0.2T～0.5T.
In another preferred version of the present utility model, doping laser crystal (1a) end face (2) is not only as the plane of incidence of pump light (9) but also as the output coupling surface, be coated with on it outgoing wavelength s polarised light high anti-, p light high saturating reflectance coating and the anti-reflection anti-reflection film of pump light, non-doped crystal (1b) end face (3) plates out the long anti-reflection film of ejected wave, non-doped crystal (1b) (as pure YAG crystal) end face (3) plates out the long anti-reflection film of ejected wave, and the two is put together, form accurate monoblock and non-planar crystal.The magnetic field of the vertical crystal end-face of installation direction (2), magnetic field intensity is elected as between 0.2T～0.5T.
Characteristics of the present utility model are, laser had both utilized that monoblock and non-planar annular chamber single-frequency performance is good, the advantage of monolithicization, good stability, absorption loss problem again when having solved bulk 2 mu m waveband laser crystal again and obtaining difficulty and 2 μ m laser crystals generation laser generation.
Description of drawings
Fig. 1 is a bonded monoblock and non-planar ring cavity structure schematic diagram.
Fig. 2 is a bonded monoblock and non-planar annular chamber front view.
Fig. 3 is a bonded monoblock and non-planar annular chamber left view.
Fig. 4 is a bonded monoblock and non-planar annular chamber front view.。
Fig. 5 is an Optical Maser System overall structure schematic diagram of the present utility model.
Embodiment
Below in conjunction with specific embodiment, further set forth the utility model.Should be appreciated that these embodiment only to be used to the utility model is described and be not used in restriction the utility model claimed scope.Fig. 1 is a monoblock and non-planar ring cavity structure schematic diagram of realizing the vibration of 2 μ m single longitudinal mode lasers, 2 μ m laser crystals (1a) and non-doped crystal (1b) bonding or be close to and form the resonant cavity that monolithic laser crystal (1) has constituted laser, the A point is the incidence point of pump light (9), it is again the eye point of oscillating laser (10), utilize light wave B in the chamber, phase delay on the fully reflecting surface that C and D are ordered, Faraday effect by externally-applied magnetic field H introducing, and pass through to go up plated film at the crystal end-face (2) at A point place, make in the chamber and have different polarization eigen states with the light wave of counterclockwise propagating along clockwise direction, and the s polarised light of each direction has different reflection coefficients with the p polarised light for output face, finally allow a direction some polarization state starting of oscillations and realize single longitudinal mode output.Laser oscillation wavelength is positioned at 2 mu m wavebands, and magnet is used to produce required externally-applied magnetic field (11), and magnetic field intensity H is chosen as between 0.2T～0.5T.
The concrete en-block construction nonplanar ring cavity structure of implementing can be selected following a kind of structural parameters:
1. crystal end-face (2) and bottom surface (4), upper bottom surface (5) are all vertical, and this face size is 12 * 4mm
2
2. two sides (6), (8) are 75 ° with bottom surface (4) angle;
3. rear surface (7) are 80 ° with bottom surface (4) angle β:
4. incident ray (9), emergent ray (10) are 46.1 ° with axis (12) angle ;
5. crystal (1a) is of a size of 12 * 4 * 3mm
3
6. crystal (1) length overall l is 14mm, and thickness d is 4mm.
Plated film on the crystal end-face of embodiment (2) need meet the following conditions:
1. anti-reflection to the pump light of laser crystal, T＞99%;
2. the s polarised light reflectivity to vibration is 95%～99% (corresponding transmitance 5%～1%), to the reflectivity 70%～85% (transmitance 30%～15%) of p polarised light.
3. the incidence angle of pump light 9 is 46.1 °, and the internal reflection angle of output face is 23.43 °.
In conjunction with Fig. 5 embodiment of the present utility model is further specified again below, "-" expression electric wire,
Expression optical fiber, " → " expression light signal.Laser of the present utility model is made up of laser head (22) and power supply cabinet (32) two large divisions, laser head (22) is the opticator of Optical Maser System, its effect is to produce single longitudinal mode laser, power supply cabinet (32) is the control system part of laser, and its effect is to provide suitable driving power and temperature control power supply for the Optical devices in the laser head.The electric wire interface of interface (23), (26) expression laser head parts (22) and power source of semiconductor laser (29); The electric wire interface of interface (24), (27) expression laser head parts (22) and semiconductor laser temperature control power supply (30); The electric wire interface of interface (25), (28) expression laser head parts (22) and crystal temperature control power supply (31).The pumping source of monoblock and non-planar laser crystal (1) is the semiconductor laser (13) of centre wavelength 785nm, and temperature sensor (14), semiconductor cooler (TEC) (15) and temperature control power supply (30) are used for noise spectra of semiconductor lasers (13) and carry out temperature control.The light beam (9) of semiconductor laser output incides on the solid laser crystal (1) behind coupling orthopedic systems (17), realizes the pumping to laser.For obtaining the output of 2 μ m single longitudinal mode lasers, the structural parameters (this existing in front more detailed explanation) that need well-designed monoblock and non-planar laser crystal (1), and the output face (2) of laser crystal go up plating to pump light high saturating, oscillation light is had the multilayer dielectric film of certain transmitance, the temperature stability that will guarantee crystal temperature control system (31) simultaneously is less than 0.1 ℃.For obtaining stable laser output, semiconductor laser temperature control (30) should guarantee that the outgoing wavelength of pumping source (13) is consistent with the absorption line of laser crystal (1a), keeps drive source (29) operating current stable simultaneously.After laser generation forms, filter the pumping light wave, obtain the 2 μ m laser output of single longitudinal mode via filter (20).
Claims (3)
1. mu m bonded monoblock and non-planar longitudinal-mode laser, this laser comprises: monoblock and non-planar laser crystal (1), magnetic field (11), the semiconductor laser (13) of semiconductor laser or optical fiber coupling output, temperature sensor (14), thermoelectric cooling module (15), fin (16), pump light coupling optical system (17), thermometric platinum resistance (18), thermoelectric cooling module (19), filter (20), LD drive source (29), semiconductor laser temperature control system (30), monolithic laser crystal attemperating unit (31), it is characterized in that: on-plane surface laser crystal (1) is made of jointly doping laser crystal (1a) and non-doped crystal (1b), on-plane surface laser crystal (1) adopts the monoblock and non-planar ring cavity structure, and this structure is by three fully reflecting surfaces and the on-plane surface polyhedron that the plane of incidence forms.
2. according to described a kind of 2 mu m bonded monoblock and non-planar longitudinal-mode lasers of claim (1), it is characterized in that on-plane surface laser crystal (1) is made up of by diffusion interlinked mode doping laser crystal (1a) and non-doped crystal (1b), on the end face (2) of on-plane surface laser crystal (1), be coated with high anti-, the high saturating and anti-reflection anti-reflection film of pump light of p polarised light of outgoing wavelength s polarised light.
3. according to described a kind of 2 mu m bonded monoblock and non-planar longitudinal-mode lasers of claim (1), it is characterized in that on-plane surface laser crystal (1) is close to by doping laser crystal (1a) and non-doped crystal (1b) forms, the contact-making surface of two crystal is coated with outgoing wavelength anti-reflection film, is coated with on the end face (2) of doping laser crystal (1a) high anti-, the high saturating and anti-reflection anti-reflection film of pump light of p polarised light of outgoing wavelength s polarised light.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200620120648 CN200959480Y (en) | 2006-06-23 | 2006-06-23 | 2 um-bonded monoblock and single longitudinal mode non-planar laser |
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| CN 200620120648 CN200959480Y (en) | 2006-06-23 | 2006-06-23 | 2 um-bonded monoblock and single longitudinal mode non-planar laser |
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| CN200959480Y true CN200959480Y (en) | 2007-10-10 |
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| CN 200620120648 Expired - Fee Related CN200959480Y (en) | 2006-06-23 | 2006-06-23 | 2 um-bonded monoblock and single longitudinal mode non-planar laser |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315588A (en) * | 2010-07-07 | 2012-01-11 | 中国计量科学研究院 | Fabry-Perot (F-P) cavity and laser using same |
| CN102347585A (en) * | 2011-10-25 | 2012-02-08 | 清华大学 | One-way traveling wave annular cavity single-frequency quasi-three-level solid laser |
| CN108594426A (en) * | 2018-01-30 | 2018-09-28 | 中国工程物理研究院激光聚变研究中心 | A kind of light delay device and its application method |
| CN114696194A (en) * | 2020-12-25 | 2022-07-01 | 中国科学院理化技术研究所 | Insertable single-block non-planar ring cavity laser device |
| US11394168B1 (en) * | 2019-06-05 | 2022-07-19 | United States Of America As Represented By The Administrator Of Nasa | Micro non-planar ring oscillator with optimized output power and minimized noise in a reduced size package |
| CN114696195B (en) * | 2020-12-25 | 2023-11-14 | 中国科学院理化技术研究所 | Pluggable monolithic annular cavity laser device |
-
2006
- 2006-06-23 CN CN 200620120648 patent/CN200959480Y/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315588A (en) * | 2010-07-07 | 2012-01-11 | 中国计量科学研究院 | Fabry-Perot (F-P) cavity and laser using same |
| CN102315588B (en) * | 2010-07-07 | 2015-02-11 | 中国计量科学研究院 | Fabry-Perot (F-P) cavity and laser using same |
| CN102347585A (en) * | 2011-10-25 | 2012-02-08 | 清华大学 | One-way traveling wave annular cavity single-frequency quasi-three-level solid laser |
| CN102347585B (en) * | 2011-10-25 | 2013-07-24 | 清华大学 | One-way traveling wave annular cavity single-frequency quasi-three-level solid laser |
| CN108594426A (en) * | 2018-01-30 | 2018-09-28 | 中国工程物理研究院激光聚变研究中心 | A kind of light delay device and its application method |
| CN108594426B (en) * | 2018-01-30 | 2023-06-30 | 中国工程物理研究院激光聚变研究中心 | Optical retarder and application method thereof |
| US11394168B1 (en) * | 2019-06-05 | 2022-07-19 | United States Of America As Represented By The Administrator Of Nasa | Micro non-planar ring oscillator with optimized output power and minimized noise in a reduced size package |
| CN114696194A (en) * | 2020-12-25 | 2022-07-01 | 中国科学院理化技术研究所 | Insertable single-block non-planar ring cavity laser device |
| CN114696195B (en) * | 2020-12-25 | 2023-11-14 | 中国科学院理化技术研究所 | Pluggable monolithic annular cavity laser device |
| CN114696194B (en) * | 2020-12-25 | 2023-11-14 | 中国科学院理化技术研究所 | Pluggable monolithic non-planar annular cavity laser device |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071010 |