CN102593700A - Three-wavelength laser device without gain competition - Google Patents
Three-wavelength laser device without gain competition Download PDFInfo
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- CN102593700A CN102593700A CN2012100308776A CN201210030877A CN102593700A CN 102593700 A CN102593700 A CN 102593700A CN 2012100308776 A CN2012100308776 A CN 2012100308776A CN 201210030877 A CN201210030877 A CN 201210030877A CN 102593700 A CN102593700 A CN 102593700A
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Abstract
The invention discloses a three-wavelength laser device without gain competition and belongs to the technical field of laser. The prior art has the problems of intense gain competition between different transition spectral lines, large waste heat generation amount of the laser device, and high Stokes frequency shift and low Stokes efficiency of pump light photons and laser photons. The three-wavelength laser device consists of a long resonant cavity and a short resonant cavity, wherein the short resonant cavity is formed in the long resonant cavity; the long resonant cavity and the short resonant cavity share a light path and an output coupling mirror; a pump is positioned on the light path outside a total reflecting mirror of the long resonant cavity; a condensing mirror is positioned on the light path between laser crystals of the long resonant cavity and the short resonant cavity and outside the total reflecting mirror of the short resonant cavity; the pump is an 885nm semiconductor laser pump or an 888nm semiconductor laser pump; the laser crystal of the long resonant cavity is a non-bonded laser crystal and generates quasi-three-energy-level laser lambda 1; and the laser crystal of the short resonant cavity is a bonded self-Raman laser crystal and generates four-energy-level laser lambda 2 and self-Raman laser lambda 3. The three-wavelength laser device is used for obtaining three-wavelength laser, and the three-wavelength laser serves as fundamental frequency light to obtain new wavelength laser by frequency mixing.
Description
Technical field
The present invention relates to a kind of no gain competition three-wavelength laser, export from raman laser while stability and high efficiency, belong to laser technology field with form realization quasi-three-level laser, four-level laser and the single order Stokes thereof of series connection pumping.
Background technology
Can obtain the wavelength of some special wave band through three-wavelength laser non-linear frequency mixing (frequency multiplication and frequency, difference frequency).Like 480～520nm wave band, this wave band is identical with the emission band of argon ion laser; 550～600nm for another example, this wave band is used widely in spectrum analysis, military affairs, astronomical observation, laser aiming magnitude field; And the THz wave band that produces through difference frequency has a wide range of applications in lossless detection, the environmental monitoring of organism and field such as communicate by letter.
To be a key name be " in the three-wavelength Nd laser chamber or the red-green-blue laser of cavity external frequency multiplication " the disclosed scheme of Chinese invention patent application to the relevant known technology of exporting three different wave length laser simultaneously by a laser.This scheme relates to a kind of three-wavelength laser, based on neodymium ion in the same neodymium laser crystal
4F
3/2-
4F
13/2,
4F
3/2-
4F
11/2With
4F
3/2-
4F
9/2The three-wavelength laser of 1.3 μ m, 1 μ m and 0.9 μ m that transition produces through in the chamber or cavity external frequency multiplication obtain red bluish-green tricolor laser.With the intracavity frequency doubling is the structure and the course of work of this laser of example explanation, sees shown in Figure 1.Nd:YAlO
3The quartz glass tube 2 of the logical cooling fluid of crystal 1 overcoat.Adopt the profile pump mode, the drive source of LD pumping 3 and temperature cooling 4 work, the pump light wavelength is 803nm, excites Nd:YAlO
3Crystal 1 produces 1341.4nm, 1079.5nm, 930nm radiation simultaneously, through dispersing prism 5,6 beam splitting of excessive dispersive power, is constituting three resonant cavity interior resonances with total reflection dichroic mirror 10,11,12 respectively by total reflection dielectric mirror 7,8,9.1341.4nm, 1079.5nm, 930nm harmonic light obtain separately harmonic wave 670.7nm, 539.7nm, 465nm by frequency multiplication nonlinear crystal 16,17,18 frequencys multiplication respectively; Be modulated into high-repetition-rate nanosecond short pulse by acousto- optic modulator 19,20,21 respectively again, respectively from reflecting dichroic mirror 13,14,15 outputs thoroughly.
Not enough below said known technology exists: one of which, owing to differ greatly with a kind of different transition spectral line emission cross sections of neodymium-doped laser crystal, for example, 1.06 μ m (1079.5nm) and 0.9 μ m (930nm) wavelength emission cross section differ 10～20 times, see the following form,
Between different transition spectral lines, there is very strong gain competition; Therefore; Known technology adopts same gain medium to realize 1341.4nm, 1079.5nm and the output of 930nm three-wavelength laser simultaneously; Be easy to cause two kinds of wavelength laser light intensity to strengthen and other a kind of wavelength laser light intensity decreasing, promptly these those consequences that disappear that rise make the laser of these three wavelength be difficult to stable oscillation stationary vibration simultaneously; Its two, 1341.4nm and 1079.5nm are four-level laser,
4F
5/2-
4F
3/2Produce a large amount of used heat in the radiationless transition process and reduce the stability of laser, in addition, this scheme pump mode is common pumping, also can produce more used heat; Its three, when adopting the 803nm semiconductor laser pumping, have bigger Stokes shift and lower Stokes efficient between pump light photon and the laser photon.
Summary of the invention
Compete in order to eliminate the three-wavelength laser gain, reduce the laser waste heat, reduce Stokes shift, improve Stokes efficient, and then obtain the output of stability and high efficiency simultaneously of three-wavelength laser, we have invented a kind of no gain competition three-wavelength laser.
The present invention's laser includes a short resonant cavity by a long resonant cavity; The two common light path, a shared output coupling mirror; Pumping is positioned on the light path in the long resonant cavity total reflective mirror outside; Condenser is characterized in that between long resonant cavity laser crystal and the short resonant cavity laser crystal and on the light path in the short resonant cavity total reflective mirror outside pumping is 885nm or 888nm semiconductor laser pumping; Long resonant cavity laser crystal is the nonbonding laser crystal, produces quasi-three-level laser λ
1Short resonant cavity laser crystal be bonding from the raman laser crystal, produce four-level laser λ simultaneously
2And from raman laser λ
3
Its technique effect of the present invention is; 885nm or 888nm pump light from pumping provide pump energy through long resonant cavity total reflective mirror for long resonant cavity laser crystal; This pump mode belongs to hot boosting pumping, can effectively reduce the used heat in the long resonant cavity, reduces the Stokes shift between pump light photon and the laser photon simultaneously; Improve Stokes efficient, thereby improve quasi-three-level laser λ
1Conversion efficiency.The quasi-three-level laser λ that is produced
1A part is as the pump light of long resonant cavity laser crystal, and this pump mode also belongs to hot boosting pumping, can reduce the used heat in the short resonant cavity equally.Because two pumping processes belong to the hot boosting pumping of tandem in this scheme, can more effectively reduce the used heat in the whole laser like this.In addition, a part of quasi-three-level laser λ in the chamber
1Have enough pump powers as pump light, thereby can greatly improve the conversion efficiency of Raman light, therefore, the present invention can obtain quasi-three-level laser λ
1, four-level laser λ
2And from raman laser λ
3Three kinds of wavelength laser stability and high efficiency outputs simultaneously.The present invention adopts two laser crystals to obtain three-wavelength laser output simultaneously, can not appear in the single laser crystal gain competition phenomenon between many transition spectral lines.The energy level of each wavelength laser is different, also reduces the generation of used heat.
Description of drawings
Fig. 1 is in the known technology in the three-wavelength Nd laser chamber or the red-green-blue laser structure sketch map of cavity external frequency multiplication.Fig. 2 is the present invention's no gain competition three-wavelength laser structure sketch map, and this figure double as is a Figure of abstract.Fig. 3 does not have bonding in the gain competition three-wavelength laser from raman laser crystal structure sketch map for the present invention.
Embodiment
The present invention's laser embodiment is following, sees shown in Figure 2.This laser includes a short resonant cavity by a long resonant cavity, the two common light path, a shared output coupling mirror 22.Long resonant cavity is made up of output coupling mirror 22 and long resonant cavity total reflective mirror 23.The inner cavity surface of long resonant cavity total reflective mirror 23 is concave surface or plane, preferred planar; This skin covering of the surface system is to quasi-three-level laser λ
1Have reflectivity, simultaneously pump light is had the transmissivity greater than 99% greater than 99%.Short resonant cavity is made up of output coupling mirror 22 and short resonant cavity total reflective mirror 24.Short resonant cavity total reflective mirror 24 chamber outer surfaces are the plane, and this skin covering of the surface system is to quasi-three-level laser λ
1Has transmissivity greater than 99%; Its inner cavity surface is concave surface or plane, preferred planar, and this skin covering of the surface system is to quasi-three-level laser λ
1Has transmissivity, simultaneously to four-level laser λ greater than 99%
2And from raman laser λ
3All has reflectivity greater than 99%.Output coupling mirror 22 inner cavity surfaces are concave surface or plane, preferred concave surface, and the radius of curvature R of this concave surface is 100mm; This recessed face mask series is to quasi-three-level laser λ
1, four-level laser λ
2And from raman laser λ
3Have less than 25% simultaneously, the transmissivity greater than 15%, as to quasi-three-level laser λ
1Has 15% transmissivity, to four-level laser λ
2Has 20% transmissivity, to from raman laser λ
3Has 23% transmissivity.Pumping 25 is positioned on the light path in long resonant cavity total reflective mirror 23 outsides, is taken on by semiconductor laser, and the pump light wavelength is 885nm or 888nm, preferred 888nm.Condenser 26 is between long resonant cavity laser crystal 27 and the short resonant cavity laser crystal 28 and on the light path in short resonant cavity total reflective mirror 24 outsides.Condenser 26 is positive lenss that a kind of two logical light faces are protruding sphere, and focal distance f is 50mm; Its film system is to quasi-three-level laser λ
1Has transmissivity greater than 99%.Long resonant cavity laser crystal 27 is the nonbonding laser crystal, produces quasi-three-level laser λ
1, be a kind of neodymium-doped vanadate crystal, preferred Nd:YVO
4Two logical light faces of long resonant cavity laser crystal 27 are parallel plane, and its film system is to quasi-three-level laser λ
1Have and be higher than 99.9% transmissivity.Short resonant cavity laser crystal 28 be bonding from the raman laser crystal, its interlude is a doped region 29, see shown in Figure 3, generation four-level laser λ
2Both sides Duan Weiwei doped region 30 produces from raman laser λ
3Doped region 29 and not the interface between the doped region 30 be bonding face 31.Short resonant cavity laser crystal 28 also is a kind of neodymium-doped vanadate crystal, preferred Nd:LuVO
4Two logical light faces of short resonant cavity laser crystal 28 are parallel plane, and its film system is to four-level laser λ
2And from raman laser λ
3Have simultaneously and be higher than 99.9% transmissivity.Actual output-index of power, laser crystal and doping content according to pumping 25 are confirmed long resonant cavity laser crystal 27 and short resonant cavity laser crystal 28 crystal bar sizes, comprise length and diameter.
The working condition of said laser is following.Along with the increase of pumping 25 power, at first at the Nd:YVO of long resonator laser crystal 27
4Produce the quasi-three-level laser λ of 914nm in the gain medium
1, quasi-three-level laser λ
1Spectral line is at Nd:YVO
4Transition in the gain medium, and then in long resonant cavity, form laser generation, quasi-three-level laser λ
1The power amplification that in long resonant cavity, circulates.Quasi-three-level laser λ
1A part is as pump-coupling light in the chamber of short resonant cavity laser crystal 28, and remainder becomes output laser.As quasi-three-level laser λ
1Power is during greater than the starting of oscillation threshold value of short resonant cavity, and gain medium is Nd:LuVO
4Short resonant cavity laser crystal 28 produce the four-level laser λ of 1064nm simultaneously
2With 1178nm from raman laser λ
3, four-level laser λ
2Spectral line is at Nd:LuVO
4Transition in the gain medium, and then in short resonant cavity, form laser generation.Four-level laser λ
2A part produces the single order Stokes from raman laser λ through short resonant cavity laser crystal 28
3, remainder becomes output laser.The single order Stokes is from raman laser λ
3Can regard four-level laser λ as
2The chamber in insert loss, make the single order Stokes from raman laser λ through optimizing short resonant cavity
3With four-level laser λ
2Reach best running state, at this moment can obtain the required best pump power of short resonant cavity.Simultaneously, lack the quasi-three-level laser λ that resonant cavity laser crystal 28 is absorbed
1Also can regard as and insert loss in the chamber, optimize long resonant cavity in view of the above, make it reach best running state.Finally obtain quasi-three-level laser λ
1, four-level laser λ
2, from raman laser λ
3Stable simultaneously output.
Claims (4)
1. no gain competition three-wavelength laser; Include a short resonant cavity by a long resonant cavity; The two common light path, a shared output coupling mirror, pumping are positioned on the light path in the long resonant cavity total reflective mirror outside, and condenser is between long resonant cavity laser crystal and the short resonant cavity laser crystal and on the light path in the short resonant cavity total reflective mirror outside; It is characterized in that pumping is 885nm or 888nm semiconductor laser pumping; Long resonant cavity laser crystal is the nonbonding laser crystal, produces quasi-three-level laser λ
1Short resonant cavity laser crystal be bonding from the raman laser crystal, produce four-level laser λ simultaneously
2And from raman laser λ
3
2. no gain competition three-wavelength laser according to claim 1 is characterized in that long resonant cavity laser crystal (27) is a kind of neodymium-doped vanadate crystal, preferred Nd:YVO
4Two logical light faces of long resonant cavity laser crystal (27) are parallel plane, and its film system is to quasi-three-level laser λ
1Have and be higher than 99.9% transmissivity.
3. no gain competition three-wavelength laser according to claim 1 is characterized in that, short its interlude of resonant cavity laser crystal (28) is doped region (29), produces four-level laser λ
2Both sides Duan Weiwei doped regions (30) produce from raman laser λ
3Doped region (29) and not the interface between the doped region (30) be bonding face (31).
4. no gain competition three-wavelength laser according to claim 1 is characterized in that, short resonant cavity laser crystal (28) is a kind of neodymium-doped vanadate crystal, preferred Nd:LuVO
4Two logical light faces of short resonant cavity laser crystal (28) are parallel plane, and its film system is to four-level laser λ
2And from raman laser λ
3Have simultaneously and be higher than 99.9% transmissivity.
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| CN2012100308776A CN102593700A (en) | 2012-02-13 | 2012-02-13 | Three-wavelength laser device without gain competition |
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| CN2012100308776A CN102593700A (en) | 2012-02-13 | 2012-02-13 | Three-wavelength laser device without gain competition |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107681460A (en) * | 2017-08-22 | 2018-02-09 | 长春理工大学 | The common frequency displacement composite solid Ramar laser of multiline output |
| CN109698459A (en) * | 2019-02-11 | 2019-04-30 | 上海应用技术大学 | Three colour synchronisation Q adjusting optical fiber lasers |
| CN114759431A (en) * | 2022-06-16 | 2022-07-15 | 北京凯普林光电科技股份有限公司 | High-brightness outer cavity semiconductor laser |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101950919A (en) * | 2010-09-07 | 2011-01-19 | 长春理工大学 | Full solid serial pump laser |
-
2012
- 2012-02-13 CN CN2012100308776A patent/CN102593700A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101950919A (en) * | 2010-09-07 | 2011-01-19 | 长春理工大学 | Full solid serial pump laser |
Non-Patent Citations (1)
| Title |
|---|
| YANFEI LÜ,..ETC: "all-solid-state cw sodium D2 resonance radiation based on intracavity frequency-doubled self-Raman laser operation in double-end diffusion-bonded Nd3+:LuVO4 crystal", 《OPTICS LETTERS》, vol. 35, no. 17, 1 September 2010 (2010-09-01) * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107681460A (en) * | 2017-08-22 | 2018-02-09 | 长春理工大学 | The common frequency displacement composite solid Ramar laser of multiline output |
| CN107681460B (en) * | 2017-08-22 | 2019-08-02 | 长春理工大学 | Multiline exports frequency displacement composite solid Ramar laser altogether |
| CN109698459A (en) * | 2019-02-11 | 2019-04-30 | 上海应用技术大学 | Three colour synchronisation Q adjusting optical fiber lasers |
| CN114759431A (en) * | 2022-06-16 | 2022-07-15 | 北京凯普林光电科技股份有限公司 | High-brightness outer cavity semiconductor laser |
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