CN103915751A - Semiconductor laser side pump module - Google Patents
Semiconductor laser side pump module Download PDFInfo
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- CN103915751A CN103915751A CN201310002609.8A CN201310002609A CN103915751A CN 103915751 A CN103915751 A CN 103915751A CN 201310002609 A CN201310002609 A CN 201310002609A CN 103915751 A CN103915751 A CN 103915751A
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- side pump
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Abstract
The invention provides a semiconductor laser side pump module which comprises semiconductor laser horizontal array Bars (9), a transparent rigid pipe and a laser crystal bar (11) arranged in the transparent rigid pipe. The semiconductor laser side pump module is characterized in that arc protruding faces (15) are evenly distributed on the peripheral wall of the transparent rigid pipe in the circumferential direction, the arc protruding faces (15) are connected in the axial direction, the length of the arc protruding faces (15) is matched with that of the semiconductor laser horizontal array Bars (9), the semiconductor laser horizontal array Bars (9) evenly arranged surrounding the transparent rigid pipe, and therefore pump light emitted by the semiconductor laser horizontal array Bars can pass through all the corresponding arc protruding faces. The semiconductor laser side pump module can simplify the installing and correcting process, the size is more compact, absorption efficiency of the pump light can be improved, reliability is high, and cost is low.
Description
Technical field
The present invention relates to solid state laser technical field, specifically, the present invention relates to a kind of semiconductor laser side pump module.
Background technology
Profile pump is one of current Main Patterns of realizing laser pumping.Laser side pumping module (abbreviation side pump module) is generally used for solid state laser.Laser side pumping module mainly comprises module body, pumping source (as Bar bar) and laser crystal bar.Pumping source and laser crystal bar are all installed on module body inside, and wherein pumping source is used for providing needed pump light, and laser crystal bar is for receiving pump light and produce laser emission under the excitation of pump light.Along with all solid state laser is in the application prospect more and more widely that presents in national defence, scientific research, industry and the field such as medical, as the semiconductor laser side pump module of core component wherein also towards all even high efficiency future developments of compact conformation, pumping.Side pump module on domestic and international market adopts semiconductor laser horizontal array to be equilateral triangle conventionally at present, and equidistant surrounding pumping laser crystal bar is carried out in the distributions such as regular pentagon, positive heptagon or positive nonagon.And semiconductor laser side pump module is for satisfied crystal bar is wherein to pumping size, the isoparametric requirement of power density, can adopt again traditional horizontal array forms such as 1 × 3,1 × 4,1 × N.Like this, along pump light slow-axis direction, namely axial along crystal bar, multiple Bar bars are a word and arrange, the size of pump beam is basic consistent with Bar bar length, on slow-axis direction, semiconductor laser Bar bar light beam mutually superposes and makes pump beam very even at plane of crystal, thus generally in actual applications the party upwards without considering pump beam shaping problem.And on quick shaft direction, namely, perpendicular in the axial direction of laser crystal bar, conventionally need to carry out shaping so that pump beam is even and compressed being controlled in certain size to pump beam.
Fig. 1 a shows horizontal section (referring to the section axial perpendicular to the crystal bar) schematic diagram of semiconductor laser side pump module common on a kind of present market, and this semiconductor laser side pump module mainly comprises semiconductor laser horizontal array Bar9, cylindrical lens 13, quartz glass tube 8 and laser crystal bar 11.Wherein, multiple (in Fig. 1 a being three) semiconductor laser horizontal array Bar9 is equidistantly and arranges around quartz glass tube 8.Semiconductor laser horizontal array Bar9 is fixed on to be had on limbers heat sink.Laser crystal bar 11 is placed in quartz glass tube 8, and quartz glass tube 8 can pass into cooling water, and the two ends UNICOM of the two ends of quartz glass tube 8 and described heat sink limbers, thereby forms water cooling chamber 12.In general, the fast axle angle of divergence of semiconductor laser horizontal array Bar9 transmitting pump light maximum possible reaches 70 ° of left and right (10 ° of left and right of the slow axis angle of divergence), this light in space (especially quick shaft direction) disperse too fast, if do not added optical shaping mirror, be difficult to realize the profile pump of laser crystal bar 11.Therefore, in Fig. 1 a, the light-emitting area of each semiconductor laser horizontal array Bar9 arranges a cylindrical lens 13, in order to the compression that collimates of the fast axle of pump light that semiconductor laser horizontal array Bar9 is sent.In addition, this semiconductor laser side pump module also has the parts such as base 1, water swivel 2.
Fig. 1 b shows another kind of the prior art and possesses the three-dimensional structure schematic diagram of the laser side pump module of fast axial light bundle shaping feature, and it mainly comprises semiconductor laser horizontal array Bar9, cylindrical lens 13, shaping mirror group 14 and laser crystal bar 11.Multiple (in Fig. 1 b being three) laser level array Bar9 equidistantly arranges around laser crystal bar 11, the pump light of each semiconductor laser horizontal array Bar9 transmitting is irradiated to shaping mirror group 14 through being close to the fixing cylindrical lens 13 of semiconductor laser horizontal array Bar9 light-emitting area after quick shaft direction compression, be irradiated on laser crystal bar 11 by expanding with homogenize of shaping mirror group 14 again, thereby realize the shaping of pump light on quick shaft direction.
Although above-mentioned scheme of the prior art can realize the shaping of pump light on quick shaft direction, but, find that through application in practice they exist following defect:
1) assembling is complicated.Conventionally when in side pump module, each Bar bar is arranged, vertical and horizontal all must be consistent and equidistantly around laser crystal bar, correspondingly, cylindrical lens and shaping mirror also must vertical and horizontal be all consistent and equidistantly around laser crystal bar, guarantee and corresponding Bar bar light-emitting area alignment, otherwise there is deviation in any one link simultaneously, capital causes pump light inhomogeneous, causes conversion efficiency low.Therefore processing and the matching requirements of pumping system to mechanical fixed component are strict, use in addition cylindrical lens and shaping mirror also to increase the volume of pumping system, make troubles to follow-up application.
2) reliability deficiency.In general, in order to improve pumping efficiency, the spacing of laser Bar bar light-emitting area and laser crystal bar is very short, in this intersegmental distance, place again cylindrical lens (or placing cylindrical lens and shaping mirror group), bring very large difficulty to construction packages, also restricted to a certain extent shaping effect and efficiency of transmission.System works long hours and must cause the consistency that Bar bar and shaping device are arranged to decline, and greatly reduces the reliability of system.
3) efficiency is low.The pump light that Bar bar is launched repeatedly passes through cylindrical lens (or repeatedly passing through cylindrical lens and shaping mirror group), must lose portion of energy because surface reflection, refraction and material absorb, and the whole efficiency of system is declined.
4) cost is high.Adopt cylindrical lens (or cylindrical lens adds shaping mirror group) to carry out laser beam compression shaping meeting and increase the cost of manufacture of side pump module; particularly for some high energy modules; conventionally can use multiple horizontal arrays, and the corresponding cylindrical lens of horizontal array or a whole set of cylindrical lens and shaping mirror group.Ultimate cost can significantly improve like this.
In sum, current in the urgent need to overcoming the problems referred to above, provide one can compress the pump light angle of divergence, improve the efficiency of pump light irradiating laser crystal bar, again simple in structure, compact, cost is low and the semiconductor laser side pump module of reliability service for a long time.
Summary of the invention
The object of this invention is to provide a kind of shortcoming that can overcome above-mentioned conventional laser side pump module, semiconductor laser side pump module.
For achieving the above object, the invention provides a kind of semiconductor laser side pump module, comprise: semiconductor laser horizontal array Bar, transparent rigid pipe and be placed in the laser crystal bar in transparent rigid pipe, it is characterized in that, on the periphery wall of described transparent rigid pipe, have at upwards equally distributed arc-shaped protrusions face of week, coherent in the axial direction and its length of described arc-shaped protrusions face and semiconductor laser horizontal array Bar length match, described semiconductor laser horizontal array Bar is evenly distributed around transparent rigid pipe, the pump light that makes each semiconductor laser horizontal array Bar transmitting is through corresponding arc-shaped protrusions face separately.
Wherein, be coated with the anti-reflection film of pump light on the arcuation raised face (RF) of described transparent rigid pipe, other parts are coated with the high-reflecting film of pump light.
Wherein, the surface of emission of each described semiconductor laser horizontal array Bar is close to corresponding arc-shaped protrusions face.
Wherein, described transparent rigid pipe is quartz glass tube.
Wherein, described quartz glass bore is Ф 4mm ~ Ф 10mm, and wall thickness is 1mm ~ 2mm.
Wherein, in the plane axial perpendicular to described quartz glass tube, the radius of curvature of described arc-shaped protrusions face is 1.2mm ~ 1.6mm, and arc length is 1.5mm ~ 3.2mm.
Wherein, in the axial direction of described quartz glass tube, the length of described arc-shaped protrusions face is identical with the length of quartz glass tube.
Wherein, the number of described semiconductor laser horizontal array Bar is three, five or seven, and they form respectively equilateral triangle, the side pump module of regular pentagon or just heptagonal surrounding pumping; The number of the arc-shaped protrusions face on described transparent mozzle periphery wall is three, five or seven.
Wherein, described semiconductor laser horizontal array Bar is fixed on the heat sink upper of water flowing, and described water flowing is heat sink arranges around transparent rigid pipe, and the heat sink two ends of water flowing are fixed on the end seat at described semiconductor laser side pump module two ends.
Wherein, described semiconductor laser horizontal array Bar launches the pump light of 808nm, is coated with the anti-reflection film of 808nm on the arcuation raised face (RF) of described transparent mozzle, and other parts are coated with the high-reflecting film of 808nm.
Compared with prior art, the present invention has following technique effect:
(1) can simplify dress school process, volume is compacter.
(2) reliability is high.
(3) can improve the absorption efficiency of pump light.
(4) cost is low.
Accompanying drawing explanation
Below, describe by reference to the accompanying drawings embodiments of the invention in detail, wherein:
Fig. 1 a shows the horizontal section schematic diagram of a kind of semiconductor laser side pump module in prior art; Wherein, horizontal section refers to the section axial perpendicular to crystal bar;
Fig. 1 b shows the schematic three dimensional views of another kind of semiconductor laser side pump module in prior art;
Fig. 2 a shows the horizontal section schematic diagram of the side pump module of one embodiment of the invention;
Fig. 2 b shows the longitudinal profile schematic diagram of the side pump module of one embodiment of the invention; Wherein, longitudinal profile is the section through crystal bar axle;
Fig. 2 c shows the quartz glass tube graphics of one embodiment of the invention;
Fig. 2 d shows the quartz glass tube cross-sectional view of one embodiment of the invention;
Fig. 2 e shows the fixing partial enlarged drawing of quartz glass end surfaces water-stop of one embodiment of the invention;
Fig. 3 a shows the horizontal section schematic diagram of the side pump module of another embodiment of the present invention;
Fig. 3 b shows the quartz glass tube graphics of another embodiment of the present invention;
Fig. 3 c shows the quartz glass tube cross-sectional view of another embodiment of the present invention;
Fig. 4 a shows the horizontal section schematic diagram of the side pump module of another embodiment of the present invention;
Fig. 4 b shows the quartz glass tube graphics of another embodiment of the present invention;
Fig. 4 c shows the quartz glass tube cross-sectional view of another embodiment of the present invention;
The pump light that Fig. 5 shows while not adding shaping mirror incides light path schematic diagram on laser bar;
Fig. 6 shows pump light and incide light path schematic diagram on laser bar after post lens compression collimation;
Fig. 7 shows light beam Geometrical propagation of the present invention path schematic diagram;
Fig. 8 shows the pumping irradiation result that does not add shaping mirror;
Result is irradiated in the pumping that Fig. 9 shows after the shaping of post lens;
Figure 10 shows apparatus of the present invention and carries out the pumping irradiation result after shaping.
Drawing explanation:
1-base, 2-water swivel, 3-outer end cap, 4-dust cover, 5-plug, 6-pressing plate,
7-end seat; 8-quartz glass tube, 9-semiconductor laser horizontal array Bar; 10-pole,
11-laser crystal bar, 12-water cooling chamber, 13-cylindrical lens, 14-shaping mirror group,
15-arc-shaped protrusions face.
Embodiment
Below, with specific embodiment, the present invention is done further and described by reference to the accompanying drawings.
Fig. 2 a shows the horizontal section schematic diagram of the semiconductor laser side pump module of one embodiment of the invention.Wherein, horizontal section refers to the section axial perpendicular to crystal bar, hereinafter repeats no more.As shown in Figure 2 a, the semiconductor laser side pump module of the present embodiment comprises semiconductor laser horizontal array Bar9, quartz glass tube 8(can be also the transparent rigid pipe that cooling fluid was made and be suitable for holding to other material) and be placed in the laser crystal bar 11 in quartz glass tube 8, on the periphery wall of quartz glass tube 8, have at upwards equally distributed arc-shaped protrusions face 15 of week, coherent in the axial direction and its length of described arc-shaped protrusions face 15 and semiconductor laser horizontal array Bar9 length match, described semiconductor laser horizontal array Bar9 is evenly distributed around quartz glass tube 8, each semiconductor laser horizontal array Bar9 is corresponding to an arc-shaped protrusions face 15.Wherein, the length of arc-shaped protrusions face 15 is generally slightly longer than semiconductor laser horizontal array Bar9, so just can make the pump light of each semiconductor laser horizontal array Bar9 transmitting all pass through each self-corresponding arc-shaped protrusions face 15, certainly, this arc-shaped protrusions face 15 also can be on the whole axial lateral wall of described quartz glass tube 8.
In the present embodiment, laser crystal bar 11 can be bar-shaped Nd:YAG crystal, and the physical dimension of laser crystal bar 11 is Ф 3mm × 80mm, Nd
3+doping content be 0.8at%.Two end faces of laser crystal bar 11 are coated with 1064nm anti-reflection film, and transmissivity is more than 99.5%.
In the present embodiment, the number of the arc-shaped protrusions face 15 of described quartz glass tube 8 can be three.Particularly, with reference to figure 2c, d, three arc-shaped protrusions faces 15 of periphery wall equal intervals distribution of quartz glass tube 8, this arc-shaped protrusions face 15 can be on the whole axial lateral wall of described quartz glass tube 8.The size of quartz glass tube 8 arc-shaped protrusions faces 15 can design as required.In an embodiment, quartz glass tube 8 internal diameters can be Ф 4mm ~ Ф 10mm, and wall thickness can be 1mm ~ 2mm.In the plane axial perpendicular to described quartz glass tube 8, arc-shaped protrusions face 15 radius of curvature can be 1.2mm ~ 1.6mm, and arc length can be 1.5mm ~ 3.2mm.Preferably, quartz glass bore can be Ф 6mm, and wall thickness can be 1.5mm, and length can be 60mm.In the plane axial perpendicular to described quartz glass tube 8, the radius of curvature of the arc-shaped protrusions face 15 on the lateral wall of quartz glass tube 8 can be 1.7mm, and arc length can be 2mm, and the axial length of arc-shaped protrusions face 15 can be identical with quartz glass tube 8.
In the present embodiment, on the arc-shaped protrusions face of described quartz glass tube 8 lateral walls, be coated with 808nm anti-reflection film, other parts are coated with 808nm high-reflecting film.
In the present embodiment, semiconductor laser horizontal array Bar9 circumferentially evenly arranges along quartz glass tube 8, semiconductor laser horizontal array Bar9 can be three, the light-emitting area of each level semiconductor array Bar9 is close to an arc-shaped protrusions face 15 on quartz glass tube 8 lateral walls, thereby provide the exciting light of 808nm to laser crystal bar 11, four semiconductor Bar bars of every upper level encapsulation of semiconductor laser horizontal array Bar9, each Bar bar power 200W, total pump power is 2.4KW to the maximum.In addition, in the axial direction, the symmetrical placement in intermediate cross-section on the semiconductor laser horizontal array Bar9 of the present embodiment is axial along semiconductor laser side pump module.
Adopt respectively the present embodiment to there is the quartz glass tube of arc-shaped protrusions structure and plated film and do not make arc-shaped protrusions structure and not the conventional quartz glass tube of plated film carry out contrast experiment, in the time that gross power is 2.4KW, the uniformity that is irradiated to the pump light on laser crystal bar 11 in the side pump module of the present embodiment has improved 10%, and laser crystal bar has improved 15% to the absorption efficiency of pump light.Wherein, the uniformity refers to (I
max-I
min)/(I
max+ I
min), wherein I
maxmaximum power density in laser bar, I
minbe lowest power density in laser bar, their unit is W/cm
3.Can find out from this contrast experiment, the present embodiment can improve uniformity and the absorption efficiency of laser crystal bar to pump light of pumping effectively.
And than traditional design the side pump module of special fast axle orthopaedic component, the side pump module utilization of the present embodiment is carried out cooling quartz glass tube to laser crystal bar, arrange by quartz glass tube lateral wall equal intervals, threaded shaft to cambered surface raised structures (being arc-shaped protrusions face 15) pump light is compressed to collimation, thereby greatly improved the uniformity of pumping.Owing to for example not needing, for example, for increasing special shaping mirror (cylindrical lens) or orthopedic systems (cylindrical lens adds shaping mirror group) between each Bar bar and laser crystal bar to fast axial light Shu Jinhang compression shaping, the side pump module of the present embodiment has compact conformation, assembles many technique effects such as easy, reliability is high, efficiency is high, cost is low.
Above be described in detail relating to the structure of shaping of pump light quick shaft direction and parts and technique effect in the semiconductor laser side pump module of the present embodiment in conjunction with horizontal section schematic diagram.Below in conjunction with the longitudinal profile schematic diagram (wherein, longitudinal profile is through the section of crystal bar axle, hereinafter repeats no more) of side pump module, other structure to this semiconductor laser side pump module and parts do further and describe.Hereinafter described concrete structure is only exemplary, and this is not to realize unique scheme of the present invention.
Fig. 2 b shows the longitudinal profile schematic diagram of the side pump module of above-described embodiment, with reference to figure 2b, except semiconductor laser horizontal array Bar9, quartz glass tube 8, laser crystal bar 11, this side pump module also comprises: base 1, water swivel 2, outer end cap 3, dust cover 4, plug 5, pressing plate 6, end seat 7 and pole 10.
Described water swivel 2 is threaded with outer end cap 3, water swivel 2, the water storage cavity forming is tightly connected between outer end cap 3 and pressing plate 6, water-cooling channel between water-cooling channel in semiconductor laser horizontal array Bar9 and quartz glass tube 8 and laser crystal bar 11 has formed the water cooling chamber 12 of semiconductor laser side pump module jointly, water swivel 2 and another water swivel are positioned at the two ends of described semiconductor laser side pump module, be connected with the outer end cap at semiconductor laser side pump module two ends by screw thread respectively, by water circulation is cooling, the used heat producing in semiconductor laser side pump module work is derived.
The circular body that described end seat 7 is hollow, on described end seat 7 around central through hole, three counterbores that equidistantly distributing, three counterbores are positioned at three radial grooves that described end base inner surface is opened separately.Described end seat 7 is screwed and is connected by pole 10 screw threads with the end seat of the semiconductor laser side pump module other end.The mounting means of semiconductor laser horizontal array Bar is as follows: for 1 × N horizontal array Bar, that N Bar word order is fixed on water flowing heat sink by the welding of the Heat Conduction Material such as indium foil is seamless, water flowing is heat sink arranges around laser crystal bar 11, and water flowing is heat sink, and two ends are fixed on end seat 7 by screw thread.The slow-axis direction size of Bar light-emitting area is axially consistent with laser crystal bar, and quick shaft direction is axial perpendicular to laser crystal bar.
Described pole 10 has three, and 60 ° are equidistantly arranged in the inner surface of described end seat 7 and semiconductor laser side pump module other end end seat, and by the be tightened end seat of described end seat 7 and the semiconductor laser side pump module other end of screw thread.
Described semiconductor laser horizontal array Bar9 is welded to heat sink upper, and the two ends outlet pass on heat sink embeds respectively in the inner surface deep gouge of described end seat 7, and screws and hold the radial groove extruding of base inner surface to fix by two end seats and the screw thread of pole.Bar is conducted and is transferred heat to heat sinkly by heat, is heat sinkly conducted heat is passed away by water cooling again.
Fig. 2 e shows the fixing partial enlarged drawing of quartz glass end surfaces water-stop in the present embodiment, the circular body that described pressing plate 6 is hollow, around central through hole three through holes of equidistantly arranging, pressing plate 6 is screwed with described end seat 7 outer surfaces and is connected by screw thread, realizes the water-stop between semiconductor laser horizontal array Bar9 and pressing plate 6, quartz glass tube 8 and pressing plate 6 by extruding rubber washer.Described outer end cap 3 is screwed and is connected by screw thread with described end seat 7, pushes rubber washer simultaneously, forms cooling chamber with described pressing plate 6, to supply or to receive cooling water to water circulation channel.Described dust cover 4 is screwed with outer end cap 3 and is connected by screw thread, for the protection of the both ends of the surface of laser crystal bar 11.Dust cover centers has light hole, so that radiation laser output.Laser crystal bar 11 two ends are connected with plug 5 with outer end cap 3 respectively, and plug 5 is connected by screw thread with outer end cap 3, by the water-stop between the realization of extruding rubber washer and laser crystal bar 11.Quartz glass tube 8 two ends are connected with pressing plate 6 with end seat 7 respectively.
In addition, Fig. 3 a, b, c show the semiconductor laser side pump module of another embodiment of the present invention, in this embodiment, the quantity of semiconductor laser horizontal array Bar9 is five, evenly be arranged in quartz glass tube 8 around, the lateral wall of quartz glass tube 8 is uniform-distribution with five arc-shaped protrusions structures round circumferencial direction, on the arc-shaped protrusions face of the lateral wall of quartz glass tube 8, is coated with 808nm anti-reflection film, and remainder is coated with 808nm high-reflecting film.The other parts of this embodiment are identical with first embodiment.
Fig. 4 a, b, c show the semiconductor laser side pump module of another embodiment of the present invention, in this embodiment, the quantity of semiconductor laser horizontal array Bar9 is seven, evenly be arranged in quartz glass tube 8 around, the lateral wall of quartz glass tube 8 is uniform-distribution with seven arc-shaped protrusions structures round circumferencial direction, on the arc-shaped protrusions face of the lateral wall of quartz glass tube 8, be coated with 808nm anti-reflection film, remainder is coated with 808nm high-reflecting film.The other parts of this embodiment are identical with first embodiment.
For ease of understanding, to pump light in the present invention, the shaping principle on quick shaft direction is described further below.
On market, the most frequently used fast axle angle of divergence of Bar bar is generally 40 ° (FWHM) now, 10 ° of the slow axis angles of divergence (FWHM), wherein FWHM full name is Full Width at Half Maxium, refers to the full width at half maximum place of light beam, and this is that those skilled in the art are understandable.Conventional laser glass rod diameter 3 ~ 6mm.For aspect describe, below take the fast axle angle of divergence of Bar bar as 40 ° (FWHM), 10 ° of the slow axis angles of divergence (FWHM), laser bar (Nd:YAG) diameter 3mm, the refractive index of laser bar is n
1=1.83, the refractive index of water is n
2=1.33, the refractive index n of quartz glass tube
3=1.46 are described for example.
Shown in Fig. 5, be that pump light is directly incident on index path on laser bar without any reshaping structure.The pump light of certain angle of divergence that semiconductor laser horizontal array Bar9 sends successively by quartz glass tube 8, water-filled water cooling chamber 12, reenter and be mapped on laser bar 11, the track of light meets the law of refraction.Wherein, in Fig. 5, the quick shaft direction of LD Bar is along y direction of principal axis (40 ° of angle of divergence directions as shown in FIG.), and slow-axis direction is outside perpendicular to paper.Show three light only at random in Fig. 5 (a), the propagation condition of 100 light has been shown in Fig. 5 (b).Owing to not having through overcompression, pump light is with the angle of divergence outgoing of 40 °, after glass tube and water layer, hot spot diffusion is larger, finally can cause part laser to overflow laser bar, can find out that the light overflowing from the upper and lower both sides of laser bar is many from Fig. 5 (b).Energy loss is serious, and the absorption efficiency of pump light is lower.
Shown in Fig. 6, be that pump light incides index path on laser bar after post lens compression collimation.The pump light of certain angle of divergence that semiconductor laser horizontal array Bar9 sends successively by cylindrical lens 13, quartz glass tube 8, water-filled water cooling chamber 12, reenter and be mapped on laser bar 11.The general refractive index of post lens and the refractive index of quartz glass tube are consistent.In Fig. 6, the quick shaft direction of LD Bar is along y direction of principal axis, and slow-axis direction is outside perpendicular to paper.Show three light only at random in Fig. 6 (a), Fig. 6 (b) shows the propagation condition of 100 light.Visible, through after post lens compressions, light beam almost can all enter laser bar, absorption efficiency can obviously promote.
It shown in Fig. 7, is light beam Geometrical propagation path profile of the present invention.The pump light of certain angle of divergence that semiconductor laser horizontal array Bar9 sends enters quartz glass tube 8 through arc-shaped protrusions face 15, then through inciding on laser bar 11 in water-filled water cooling chamber 12.In Fig. 7, the quick shaft direction of LD Bar is along y direction of principal axis, and slow-axis direction is outside perpendicular to paper.Show three light only at random in Fig. 7 (a), Fig. 7 (b) shows the propagation condition of 100 light.Because bulge-structure makes pump beam substantially most of by laser bar to the compression of pump light, it is that Fig. 5 situation improves much that efficiency does not more add shaping mirror situation.
Fig. 8, Fig. 9, Figure 10 are respectively the simulation results that does not add shaping mirror, strutting lens shaping mirror and apparatus of the present invention, and wherein, abscissa is laser bar radius, and ordinate is that laser bar is subject to the postradiation energy storage density of pump light.Above-mentioned theory is calculated all take diameter as Ф 3mm, and doping 0.6at%Nd:YAG laser bar is that example is carried out.
Fig. 8 does not add shaping mirror pumping to irradiate result, and because beam divergence angle is 40 °, centre does not have again shaping mirror compression, cause the absorption efficiency of crystal bar to pump light: η=37%, absorption efficiency is very low, and what on market, use is all the laser bar of about 3mm, causes general absorption efficiency lower.Its uniformity: (Imax-Imin)/(uniformity calculated value is lower in (Imax+Imin)=(585.3-332.5)/(585.3+332.5)=0.28, the stored energy distribution that laser bar is described is more even, and later stage effect is just better).
Fig. 9 is that after the shaping of post lens, result is irradiated in pumping, absorption efficiency: η=51%, and most effective.In 2mm region, laser bar center, pump light after shaping, be substantially uniform irradiation to laser bar, the uniformity is very good, but within radius is greater than the scope of 2mm, just do not have pump light to irradiate, therefore illustrate that this shaping scheme is generally only applicable to the laser bar that bore is less.The laser bar (laser bar of the bore 3mm of for example main flow) that is greater than 2mm for bore will settle more complicated apparatus for shaping to compress and homogenize pump light specially.
Figure 10 is that after apparatus of the present invention are carried out shaping, result is irradiated in pumping, absorption efficiency: η=48%, if reasonably design the curvature of raised structures, absorption efficiency can further increase, and the pump light absorption efficiency that this device causes is as seen apparently higher than not adding 37% of reshaping structure.Its uniformity: (Imax-Imin)/(Imax+Imin)=(721-521)/(721+521)=0.16,0.28 while being obviously better than not adding shaping mirror.For different excellent diameters, if reasonably design the distance between curvature and Bar and the glass tube of raised structures, efficiency and the uniformity all can obtain satisfied raising.Exemplarily, design parameter after one group of optimization is: laser crystal bar diameter 3mm, water layer thickness 2mm between glass tube and laser crystal bar, glass tube thickness 2mm, the radius of curvature of arc-shaped protrusions face is 1.2mm, arc length 2.1mm, the length of arc-shaped protrusions face is the same with glass tube long, and arc-shaped protrusions identity distance is from Bar light-emitting area 0.8mm.The uniformity is now (Imax-Imin)/(Imax+Imin)=0.15.
In sum, easily find out, compared with prior art, the present invention has following some excellent effect:
1, assembling easily.The horizontal array Bar arranging around laser crystal bar of the present invention only need to position the arc-shaped protrusions face of single horizontal array Bar and quartz glass tube lateral surface, and dress school process is simply simplified, and laser side pump module volume is compacter.
2, reliability is high.Abandon the way that apparatus for shaping is set specially between horizontal array Bar and laser crystal bar, reduced the encapsulation difficulty of carrying out the elements such as Bar, quartz glass tube and crystal bar in small space.The simplification of device, the liberation in space guarantee the reliability of whole laser side pump module.
3, efficiency is high.The present invention adopts the multidirectional pumping Nd:YAG of level semiconductor array crystal bar, quartz glass tube lateral surface is made arc-shaped protrusions structure pump light is carried out to fast axial compression contracting collimation, on arc-shaped protrusions face, be coated with 808nm anti-reflection film, its lap of quartz glass tube lateral wall is coated with 808 high-reflecting films and improves the absorption efficiency of pump light.Laser side pump module of the present invention and the laser side pump module that installed conventional quartz glass tube are carried out to experiment test contrast, selecting power is the mono-Bar of 200W, gross power 2.4KW, doping content is the Nd:YAG laser crystal bar of 0.8at%, the uniformity that adopts module of the present invention to be irradiated to the pump light on laser crystal bar has improved 10%, and laser crystal bar has improved 15% to the absorption efficiency of pump light.
4, cost is low.Compared with conventional module, the present invention is by arc-shaped protrusions structure and the segmentation coating technique of quartz glass tube lateral wall, significantly improve pumping efficiency and the pumping uniformity, without special reshaping structure is set between Bar and quartz glass tube, thereby greatly reduce the cost of pumping source.
It should be noted last that, above embodiment is only unrestricted in order to technical scheme of the present invention to be described.Although the present invention is had been described in detail with reference to embodiment, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is modified or is equal to replacement, do not depart from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of claim scope of the present invention.
Claims (10)
1. a semiconductor laser side pump module, comprise: semiconductor laser horizontal array Bar(9), transparent rigid pipe and be placed in the laser crystal bar (11) in transparent rigid pipe, it is characterized in that, on the periphery wall of described transparent rigid pipe, have at upwards equally distributed arc-shaped protrusions face (15) of week, described arc-shaped protrusions face (15) coherent in the axial direction and its length and semiconductor laser horizontal array Bar(9) length matches, described semiconductor laser horizontal array Bar(9) evenly distributed around transparent rigid pipe, the pump light that makes each described semiconductor laser horizontal array Bar transmitting is through corresponding arc-shaped protrusions face (15) separately.
2. semiconductor laser side pump module according to claim 1, is characterized in that, is coated with the anti-reflection film of pump light on the arcuation raised face (RF) (15) of described transparent rigid pipe, and other parts are coated with the high-reflecting film of pump light.
3. semiconductor laser side pump module according to claim 1, is characterized in that, each described semiconductor laser horizontal array Bar(9) the surface of emission be close to its corresponding arc-shaped protrusions face (15).
4. semiconductor laser side pump module according to claim 3, is characterized in that, described transparent rigid pipe is quartz glass tube (8).
5. semiconductor laser side pump module according to claim 4, is characterized in that, described quartz glass tube (8) internal diameter is Ф 4mm ~ Ф 10mm, and wall thickness is 1mm ~ 2mm.
6. semiconductor laser side pump module according to claim 5, is characterized in that, in the plane axial perpendicular to described quartz glass tube (8), the radius of curvature of described arc-shaped protrusions face (15) is 1.2mm ~ 1.6mm, and arc length is 1.5mm ~ 3.2mm.
7. semiconductor laser side pump module according to claim 6, is characterized in that, axially going up of described quartz glass tube (8), the length of described arc-shaped protrusions face (15) is identical with the length of quartz glass tube (8).
8. semiconductor laser side pump module according to claim 1, it is characterized in that, described semiconductor laser horizontal array Bar(9) number be three, arrange by the mode of equilateral triangle surrounding pumping, the number of the arc-shaped protrusions face (15) on described transparent rigid pipe periphery wall is three; Or described semiconductor laser horizontal array Bar(9) number be five, arrange by the mode of regular pentagon surrounding pumping, the number of the arc-shaped protrusions face (15) on described transparent rigid pipe periphery wall is five; Described semiconductor laser horizontal array Bar(9) number be seven, arrange by the mode of positive heptagon surrounding pumping; The number of the arc-shaped protrusions face (15) on described transparent rigid pipe periphery wall is seven.
9. semiconductor laser side pump module according to claim 1, it is characterized in that, described semiconductor laser horizontal array Bar(9) be fixed on water flowing heat sink, described water flowing is heat sink arranges around transparent rigid pipe, and the heat sink two ends of water flowing are fixed on the end seat at described semiconductor laser side pump module two ends.
10. semiconductor laser side pump module according to claim 1, it is characterized in that, described semiconductor laser horizontal array Bar(9) pump light of transmitting 808nm, on the arcuation raised face (RF) of described transparent mozzle, be coated with the anti-reflection film of 808nm, other parts are coated with the high-reflecting film of 808nm.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105424624A (en) * | 2015-11-11 | 2016-03-23 | 广州讯动网络科技有限公司 | Detector based on semiconductor laser unit and parameter adjustment method of detector |
| CN105703210A (en) * | 2016-03-20 | 2016-06-22 | 中国科学院光电研究院 | Large-diameter and uniform-amplification laser module |
| CN106300003A (en) * | 2016-11-07 | 2017-01-04 | 中国工程物理研究院应用电子学研究所 | A kind of diode-pumped nd yag laser module packaging system |
| CN106374333A (en) * | 2016-11-07 | 2017-02-01 | 中国工程物理研究院应用电子学研究所 | Package method of diode pumping laser module |
| CN104165757B (en) * | 2014-08-28 | 2017-06-16 | 中国科学院光电研究院 | Pumping source detection means and its detection method |
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| CN107565359A (en) * | 2017-08-16 | 2018-01-09 | 西安炬光科技股份有限公司 | A kind of semiconductor laser side face-pumping pumping system |
| CN110911953A (en) * | 2019-11-05 | 2020-03-24 | 东方强光（北京)科技有限公司 | Water-cooling semiconductor light source side pump solid laser module |
| CN115021070A (en) * | 2022-08-03 | 2022-09-06 | 度亘激光技术（苏州）有限公司 | Side pump module and semiconductor laser |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101286616A (en) * | 2008-05-30 | 2008-10-15 | 中国科学院上海光学精密机械研究所 | 2 mu m complete solid state pulse ring laser |
| CN102780152A (en) * | 2012-06-29 | 2012-11-14 | 中国电子科技集团公司第十一研究所 | High-power LD (laser diode) side surface surrounding pumping structure module |
-
2013
- 2013-01-05 CN CN201310002609.8A patent/CN103915751B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101286616A (en) * | 2008-05-30 | 2008-10-15 | 中国科学院上海光学精密机械研究所 | 2 mu m complete solid state pulse ring laser |
| CN102780152A (en) * | 2012-06-29 | 2012-11-14 | 中国电子科技集团公司第十一研究所 | High-power LD (laser diode) side surface surrounding pumping structure module |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104165757B (en) * | 2014-08-28 | 2017-06-16 | 中国科学院光电研究院 | Pumping source detection means and its detection method |
| CN105424624A (en) * | 2015-11-11 | 2016-03-23 | 广州讯动网络科技有限公司 | Detector based on semiconductor laser unit and parameter adjustment method of detector |
| CN105703210A (en) * | 2016-03-20 | 2016-06-22 | 中国科学院光电研究院 | Large-diameter and uniform-amplification laser module |
| CN105703210B (en) * | 2016-03-20 | 2019-09-24 | 中国科学院光电研究院 | Heavy caliber uniformly amplifies laser module |
| CN106374333B (en) * | 2016-11-07 | 2019-01-15 | 中国工程物理研究院应用电子学研究所 | A kind of diode-pumped nd yag laser module encapsulation method |
| CN106300003A (en) * | 2016-11-07 | 2017-01-04 | 中国工程物理研究院应用电子学研究所 | A kind of diode-pumped nd yag laser module packaging system |
| CN106374333A (en) * | 2016-11-07 | 2017-02-01 | 中国工程物理研究院应用电子学研究所 | Package method of diode pumping laser module |
| CN107565359A (en) * | 2017-08-16 | 2018-01-09 | 西安炬光科技股份有限公司 | A kind of semiconductor laser side face-pumping pumping system |
| CN107492785B (en) * | 2017-08-16 | 2019-08-20 | 西安炬光科技股份有限公司 | A kind of semiconductor laser light source module that realizing circular light spot and profile pump device |
| CN107565359B (en) * | 2017-08-16 | 2019-09-17 | 西安炬光科技股份有限公司 | A kind of semiconductor laser side face-pumping pumping system |
| CN107492785A (en) * | 2017-08-16 | 2017-12-19 | 西安炬光科技股份有限公司 | A kind of semiconductor laser light source module for realizing circular light spot and profile pump device |
| CN110911953A (en) * | 2019-11-05 | 2020-03-24 | 东方强光（北京)科技有限公司 | Water-cooling semiconductor light source side pump solid laser module |
| CN115021070A (en) * | 2022-08-03 | 2022-09-06 | 度亘激光技术（苏州）有限公司 | Side pump module and semiconductor laser |
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