CN102820610A - Diode pumping laser gain module and preparation method thereof - Google Patents
Diode pumping laser gain module and preparation method thereof Download PDFInfo
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- CN102820610A CN102820610A CN2012103255785A CN201210325578A CN102820610A CN 102820610 A CN102820610 A CN 102820610A CN 2012103255785 A CN2012103255785 A CN 2012103255785A CN 201210325578 A CN201210325578 A CN 201210325578A CN 102820610 A CN102820610 A CN 102820610A
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Abstract
The invention discloses a diode pumping laser gain module and a preparation method thereof. A front end plate of the gain module and even annular pumping laser groups are fastened together, the even annular pumping laser groups and odd annular pumping laser groups are sequentially connected in series at stagger, and every two annular pumping laser groups are sealed and fixed. A back end plate of the gain module and the odd annular pumping laser groups are connected in series, and cooling liquid is injected inside to form a gain module main body. The gain module main body is connected with a base through a semiconductor cooler to timely exchange heat. Current is exerted to a diode laser to enable the diode laser to emit laser pumping laser pumping laser media. Heat produced by the laser pumping laser pumping laser media is transmitted to an annular inward polygon heat sink through cooling liquid, and the heat and heat produced by the diode laser are transmitted to the base for cooling through the semiconductor cooler. The gain module is simple in structure, convenient to install, good in environmental suitability and capable of well working at ambient temperature of -40DEG C to 60 DEG C.
Description
Technical field
The invention belongs to the diode laser field, be specifically related to a kind of diode-pumped nd yag laser gain module and preparation method thereof, as the solid state laser pumping source.
Background technology
When the diode laser gain module is applied to field such as laser ranging, laser fuze, require it to have compact conformation, in light weight, high efficiency, reliable in sweltering heat and bitter cold, can bear mechanical shock vibration, characteristics such as non-maintaining.
In bar-shaped diode-pumped nd yag laser gain module,, all need cooling fluid that it is cooled off in real time because diode laser and laser medium are had relatively high expectations to heat radiation.The mode of water-cooled is all adopted in the heat radiation that name is called the heat radiation of having introduced diode laser in the patent documentation (patent No. is CN 1674372A) of " polygonal large power semiconductor laser laminated array module " and laser medium; But water-cooling system has limited the environmental suitability of pump module in that be lower than under 0 ℃ the environment can't operate as normal.And water-cooling structure is complicated, and pump light must just can shine on the dielectric rod through cooling water and glass tube, has reduced the effective absorption of rod to pump light, and the gain of module is on the low side relatively.Name is called in " laser gain module of semiconductor laser monotube combined side pumped solid-state laser device " patent documentation (number of patent application is 200910081390.9) has introduced the heat dissipation problem that solves diode laser through modes such as heat pipes; But the heat dissipation problem for laser medium is not considered; When high power pump; The module meeting can't operate as normal because of the medium heat effects.
Summary of the invention
For the deficiency that the heat radiation cooling structure is complicated, environmental suitability is poor, gain is on the low side that overcomes diode-pumped nd yag laser gain module in the prior art, one of the object of the invention provides a kind of diode-pumped nd yag laser gain module.Another object of the present invention provides a kind of preparation method of diode-pumped nd yag laser gain module.Described diode-pumped nd yag laser gain module can provide high power, high efficiency pumping, has uniform fluorescence distribution, can under adverse circumstances, work, simple in structure, and reliability is higher.
A kind of diode-pumped nd yag laser gain module of the present invention; Be characterized in that described gain module comprises rod-shaped laser medium, cooling fluid, a plurality of even number annular pump laser group, a plurality of odd number annular pump laser group, front end-plate, end plate, semiconductor cooler, base, hygrosensor, O RunddichtringO, excellent sealed briquette; Its annexation is, described front end-plate is fixedly connected with even number annular pump laser group, and even number annular pump laser group alternately is connected in series with the annular pump laser group of odd number successively, and is connected with end plate; By the sealing of O RunddichtringO, the inner laser pump cavity that forms is injected with cooling fluid in the laser pump cavity, constitute diode-pumped nd yag laser gain module main body between front end-plate, even number annular pump laser group, odd number annular pump laser group, the end plate; Semiconductor cooler is arranged between diode-pumped nd yag laser gain module main body and the base, is fixedly connected with diode-pumped nd yag laser gain module main body, base; Hygrosensor is arranged on the side of an annular pumping laser array in the diode-pumped nd yag laser gain module main body; Rod-shaped laser medium passes front end-plate, even number annular pump laser group, odd number annular pump laser group, end plate successively, and the two ends of rod-shaped laser medium are fixed on the end face of front end-plate, end plate through excellent sealed briquette respectively.
Described odd number annular pump laser group comprises several diode laser chips, several times are heat sink, several insulating ceramic films, two extraction electrodes, electrode sealed briquette, polymethyl methacrylate observation windows, the ring-type inner polygon is heat sink; Wherein each diode laser chip be arranged on two time heat sink between, be sandwich structure and form " mountain " font time encapsulating structure with the insulating ceramic film welding; A plurality of " mountain " font time encapsulation successively polyphone mount the ring-type inner polygon heat sink on; Two extraction electrodes are connected with the last diode laser chip with heat sink first the interior diode laser chip of ring-type inner polygon respectively draws.First diode laser chip extraction electrode is a negative pole in the ring of described odd number annular pump laser group.
Described even number annular pump laser group is identical with the basic structure of odd number annular pump laser group.Difference is that interior first diode laser chip extraction electrode of ring of even number annular pump laser group is positive pole.
Described cooling fluid is higher than 97% to the transmitance of near-infrared laser, and working temperature is-40 ℃～60 ℃.
Described sealing ring is the O RunddichtringO.
Oxygen-free copper or other thermal conductivities that the heat sink employing of described ring-type inner polygon is gold-plated are higher than 150k/Wm
-1K
-1High thermal conductivity material process.
Described time gold-plated oxygen-free copper or other thermal conductivities of heat sink employing is higher than 150k/Wm
-1K
-1High thermal conductivity material process.
The quantity of described even number annular pump laser group is identical with the quantity of the annular pump laser group of odd number or differ one, and the limit number that described ring-type inner polygon is heat sink is the odd number on three～15 limits.
The number of even number annular pump laser group setting is 1～8 among the present invention, and the number of odd number annular pump laser group setting is 1～8.
The preparation method of diode-pumped nd yag laser gain module of the present invention comprises the steps:
A. with the diode laser chips welding two time heat sink between, again insulating ceramic film is welded on time heat sink bottom, process " mountain " font time encapsulating structure;
B. will weld time encapsulation of good " mountain " font is installed on each heat sink limit of ring-type inner polygon successively; And in the bottom of insulating ceramics solder application; An extraction electrode is connected with first diode laser chip; Another extraction electrode is connected with the last diode laser chip, and utilizes special fixture to fix;
The heat sink reflow soldering of putting into of polygon that c. will connect the diode laser chip carries out disposable welding, forms odd number annular pump laser group;
D. even number annular pump laser group is identical with odd number annular pump laser group making step;
E. front end-plate, welding all even numbers annular pump laser groups, odd number annular pump laser group, end plate well assembled through the screw serial connection; Rod-shaped laser medium passes front end-plate, even number annular pump laser group, odd number annular pump laser group, end plate successively, and the rod-shaped laser medium two ends are separately fixed on the end face of front end-plate, end plate;
F. the extraction electrode of even number annular pump laser group, odd number annular pump laser group is connected successively;
G. the liquid injection port of cooling fluid from the bar-shaped diode-pumped nd yag laser gain module of immersion liquid cooling main body top is injected in the optically focused cavity; Make the liquid level of cooling fluid flood extraction electrode; Through polymethyl methacrylate window sealing liquid injection port, constitute diode-pumped nd yag laser gain module main body;
H. semiconductor cooler is installed between diode-pumped nd yag laser gain module main body, the base, and smears thermal grease conduction;
I. the annular pumping laser array of one of them in diode-pumped nd yag laser gain module main body side mounting temperature detector constitutes the diode-pumped nd yag laser gain module.
Diode-pumped nd yag laser gain module of the present invention; Cascaded structure is adopted in electrical connection between all odd numbers, the even number annular pump laser group; During work; The driving power output line is linked to each other with positive and negative electrode,, make diode laser emission laser pumping rod-shaped laser medium through applying electric current to diode laser.The heat that laser medium produced in the work through cooling fluid be transmitted to the ring-type inner polygon heat sink on and the heat that produces of diode laser be transmitted to the base heat radiation through semiconductor cooler together.
The diode-pumped nd yag laser gain module adopts the uniform pumping version of regular polygon among the present invention; Can realize the uniform pumping of the emission spectrum of a plurality of diode lasers to bar-shaped medium; Effectively increase the thermal stress of laser medium in pumping homogeneity, the reduction course of work, improved pumping efficiency.Compare with traditional water-cooled diode laser profile pump laser module, module of the present invention need not the cooling duct, and is simple in structure, adopted the modular package assembly; The heat conducting and radiating mode is adopted in the cooling of rod-shaped laser medium, and diode laser and laser medium can be realized good heat radiating, and good environmental adaptability can be in ambient temperature-40 ℃～60 ℃ of works fine.
Description of drawings
Fig. 1 is a diode-pumped nd yag laser gain module structural representation of the present invention;
Fig. 2 is the positive cross-sectional view of diode-pumped nd yag laser gain module of the present invention;
Fig. 3 is the odd number annular pump laser group structure cutaway view in the diode-pumped nd yag laser gain module of the present invention;
Among the figure, 25. heat sink II of 1. bar-shaped gain media 2. cooling fluids 3. even numbers annular pump laser group I 4. odd numbers annular pump laser group I 5. front end-plates, 6. end plates, 7. semiconductor coolers, 8. bases, 9. hygrosensors, 10. O RunddichtringOs, 11. rod sealed briquette 12.U type electrodes, 15. heat sink heat sink 19. polymethyl methacrylate window 20.L type electrodes of I 16. insulating ceramic films 17. extraction electrodes 18. ring-type inner polygons of 13. liquid injection port, 14 diode laser chips.
Embodiment
Below in conjunction with accompanying drawing diode-pumped nd yag laser gain module of the present invention is described further.
Fig. 1 is a diode-pumped nd yag laser gain module structural representation of the present invention, and Fig. 2 is a diode-pumped nd yag laser gain module side cross-section cutaway view of the present invention.In Fig. 1, Fig. 2, diode-pumped nd yag laser gain module of the present invention comprises bar-shaped gain media 1, cooling fluid 2, even number annular pump laser group, odd number annular pump laser group, front end-plate 5, end plate 6, semiconductor cooler 7, base 8, hygrosensor 9, O RunddichtringO 10, excellent sealed briquette 11, U type electrode 12, L type electrode I 20.In the present embodiment, be provided with three even number annular pump laser groups, be respectively even number annular pump laser group I 3, even number annular pump laser group II, even number annular pump laser group III; Be provided with two odd number annular pump laser groups, be respectively odd number annular pump laser group I 4, odd number annular pump laser group II; Be provided with 6 O RunddichtringOs, O RunddichtringO 10 is one of them, and excellent sealed briquette is provided with two, and excellent sealed briquette 11 is one of them; U type electrode is provided with four, and U type electrode 12 is one of them; L type electrode is provided with two, is respectively L type electrode I 20, L type electrode II.Its annexation is; Described front end-plate 5 is fixedly connected with even number annular pump laser group I 3; Even number annular pump laser group I 3, odd number annular pump laser group I 4, even number annular pump laser group II, odd number annular pump laser group II, even number annular pump laser group III are connected in series successively, and end plate 6 is connected in series with even number annular pump laser group III.Wherein, Be electrically connected through the realization of U type electrode between even number annular pump laser group and the odd number annular pump laser group; The positive pole of even number annular pump laser group III 3 is drawn through L type electrode I 20, and the negative pole of even number annular pump laser group I is drawn through L type electrode II.Seal by the O RunddichtringO between front end-plate 5, three even number annular pump laser groups, two odd number annular pump laser groups, the end plate 6; The inner laser pump cavity that forms; Inject cooling fluid 2 in the laser pump cavity; Form diode-pumped nd yag laser gain module main body, be provided with liquid injection port 13 on diode-pumped nd yag laser gain module main body top.Wherein, O RunddichtringO 10 is arranged between odd number annular pump laser group I 4 and the even number annular pump laser group I 3, and U type electrode 12 is arranged between odd number annular pump laser group II and the even number annular pump laser group III.Semiconductor cooler 7 is arranged between diode-pumped nd yag laser gain module main body and the base 8; Be fixedly connected with diode-pumped nd yag laser gain module main body, base 8, the heat that produces during with diode-pumped nd yag laser gain module body of work in time is delivered on the base 8 and dispels the heat; Hygrosensor 9 is arranged on the side of the even number annular pump laser group II in the diode-pumped nd yag laser gain module main body, monitoring modular temperature; Rod-shaped laser medium 1 passes front end-plate 5, even number annular pump laser group I 3, odd number annular pump laser group I 4, even number annular pump laser group II, odd number annular pump laser group II, even number annular pump laser group III, end plate 6 successively, and the two ends of rod-shaped laser medium 1 are fixed on the end face of front end-plate 5, end plate 6 with excellent sealed briquette II through excellent sealed briquette I 11 respectively.
Fig. 3 is the odd number annular pump laser group structure cutaway view in the diode-pumped nd yag laser gain module of the present invention; Among Fig. 3; Described odd number annular pump laser group I 4 comprises diode laser chip 14, inferior heat sink I 15, inferior heat sink II 25, insulating ceramic film 16, extraction electrode, polymethyl methacrylate observation window 19, the ring-type inner polygon is heat sink 18.In the present embodiment, be provided with 11 diode laser chips, diode laser chip 14 is one of them.Be provided with 22 time heat sink, inferior heat sink I 15, inferior heat sink II 25 are wherein two.Be provided with 11 insulating ceramic films, insulating ceramic film 16 is one of them.Be provided with two extraction electrodes, extraction electrode 17 is one of them.The ring-type inner polygon is heat sink, and 18 limit number is set to ten on one side.Diode laser chip 14 is arranged between time heat sink I 15 and time heat sink II 25, becomes sandwich structure and welds formation " mountain " font time encapsulating structures with insulating ceramic film 16; Time encapsulation of 11 " mountain " fonts successively series connection mount in the ring-type hendecagon heat sink on, the gold-plated processing of hendecagon oxygen-free copper heat sink surface in the ring-type; Two extraction electrodes are connected with the 11 diode laser chip with ring-type inner polygon heat sink 18 interior first diode laser chips respectively draws.
Even number annular pump laser group in the diode-pumped nd yag laser gain module described in the present embodiment is identical with odd number annular pump laser group basic structure.Difference is that first diode laser chip extraction electrode of interior ring of even number annular pump laser group is positive pole, and first diode laser chip extraction electrode of interior ring of odd number annular pump laser group is a negative pole.
The transmitance of the 2 pairs of near-infrared lasers of cooling fluid described in the present embodiment is higher than 97%, and working temperature is-40 ℃～60 ℃.
The gold-plated oxygenless copper material of the heat sink employing of hendecagon is processed in the ring-type described in the present embodiment.
The gold-plated oxygenless copper material of inferior heat sink employing described in the present embodiment is processed.
Present embodiment is identical with the basic structure of embodiment 1, and difference is that described diode-pumped nd yag laser module is made up of five odd number annular pump laser groups and five even number annular pump laser groups.The gold-plated BeO material of inferior heat sink employing is processed.
Present embodiment is identical with the basic structure of embodiment 1, and difference is that described semiconductor pumped laser module is made up of six odd number annular pump laser groups and six even number annular pump laser groups.The gold-plated WCu alloy material of inferior heat sink employing is processed.
Embodiment 4
Present embodiment is identical with the basic structure of embodiment 1, and difference is that described semiconductor pumped laser module is made up of three odd number annular pump laser groups and four even number annular pump laser groups.The gold-plated AlN material of inferior heat sink employing is processed.
Present embodiment is identical with the basic structure of embodiment 1, and difference is that the limit number that described ring-type inner polygon is heat sink is 9 limits.The gold-plated MoCu alloy material of inferior heat sink employing is processed.
Present embodiment is identical with the basic structure of embodiment 1, and difference is that the heat sink limit of described ring-type inner polygon number is 7 limits.
Present embodiment is identical with the basic structure of embodiment 1, and difference is that the heat sink limit of described ring-type inner polygon number is 13 limits.
Present embodiment is identical with the basic structure of embodiment 1, and difference is, the BeO material that described heat sink material is high heat conductance.
Present embodiment is identical with the basic structure of embodiment 1, and difference is: the WCu alloy that described heat sink material is high heat conductance.
The preparation method of a kind of diode-pumped nd yag laser gain module of the present invention comprises the steps:
A. with the diode laser chips welding two time heat sink between, again insulating ceramic film is welded on time heat sink bottom, process " mountain " font time encapsulating structure;
B. will weld time encapsulation of good " mountain " font is installed on each limit of ring-type inner polygon heat sink 18 successively; And in the bottom of insulating ceramics solder application; An extraction electrode is connected with first diode laser chip; Another extraction electrode is connected with the last diode laser chip, and utilizes special fixture to fix;
The polygon heat sink 18 that c. will connect the diode laser chip is put into reflow soldering and is carried out disposable welding, forms odd number annular pump laser group;
D. even number annular pump laser group is identical with odd number annular pump laser group making step;
E. front end-plate 5, welding all even numbers annular pump laser groups, odd number annular pump laser group, end plate 6 well assembled through the screw serial connection; Rod-shaped laser medium 1 passes front end-plate 5, even number annular pump laser group, odd number annular pump laser group, end plate 6 successively, and rod-shaped laser medium 1 two ends are separately fixed on the end face of front end-plate 5, end plate 6;
F. the extraction electrode of even number annular pump laser group, odd number annular pump laser group is connected successively;
G. the liquid injection port 13 of cooling fluid 2 from diode-pumped nd yag laser gain module main body top is injected in the optically focused cavity; Make the liquid level of cooling fluid 2 flood extraction electrode; Through polymethyl methacrylate window 19 sealing liquid injection port 13, constitute diode-pumped nd yag laser gain module main body;
I. the annular pumping laser array of one of them in diode-pumped nd yag laser gain module main body side mounting temperature detector 9, constitute the diode-pumped nd yag laser gain module.
Claims (10)
1. diode-pumped nd yag laser gain module is characterized in that: described gain module comprises rod-shaped laser medium (1), cooling fluid (2), a plurality of even number annular pump laser group, a plurality of odd number annular pump laser group, front end-plate (5), end plate (6), semiconductor cooler (7), base (8), hygrosensor (9), O RunddichtringO, excellent sealed briquette; Its annexation is, described front end-plate (5) is fixedly connected with even number annular pump laser group, and even number annular pump laser group alternately is connected in series with the annular pump laser group of odd number successively, and is connected with end plate (6); Seal by the O RunddichtringO between front end-plate (5), even number annular pump laser group, odd number annular pump laser group, the end plate (6); The inner laser pump cavity that forms; Be injected with cooling fluid (2) in the laser pump cavity, constitute diode-pumped nd yag laser gain module main body; Semiconductor cooler (7) is arranged between diode-pumped nd yag laser gain module main body and the base (8), is fixedly connected with diode-pumped nd yag laser gain module main body, base (8); Hygrosensor (9) is arranged on the side of an annular pumping laser array in the diode-pumped nd yag laser gain module main body; Rod-shaped laser medium (1) passes front end-plate (5), even number annular pump laser group, odd number annular pump laser group, end plate (6) successively, and the two ends of rod-shaped laser medium (1) are fixed on the end face of front end-plate (5), end plate (6) through excellent sealed briquette respectively.
2. diode-pumped nd yag laser gain module according to claim 1; It is characterized in that: described odd number annular pump laser group comprises several diode laser chips, inferior heat sink, insulating ceramic film (16), two extraction electrodes, the ring-type inner polygon is heat sink (18); Wherein each diode laser chip be arranged on two time heat sink between, be sandwich structure and form " mountain " font time encapsulating structure with the insulating ceramic film welding; A plurality of " mountain " font time encapsulation polyphone successively mounts on the ring-type inner polygon heat sink (18); Two extraction electrodes are connected with the last diode laser chip with first interior diode laser chip of ring-type inner polygon heat sink (18) respectively draws; First diode laser chip extraction electrode is a negative pole in the ring of described odd number annular pumping laser group.
3. diode-pumped nd yag laser gain module according to claim 1; It is characterized in that: described even number annular pump laser group is identical with the basic structure of odd number annular pump laser group, and difference is that interior first diode laser chip extraction electrode of ring of even number annular pump laser group is anodal.
4. diode-pumped nd yag laser gain module according to claim 1 is characterized in that: described cooling fluid (2) working temperature is-40 ℃～60 ℃.
5. diode-pumped nd yag laser gain module according to claim 1 is characterized in that: described sealing ring is the O RunddichtringO.
6. diode-pumped nd yag laser gain module according to claim 2 is characterized in that: described ring-type inner polygon is heat sink (20) adopts gold-plated oxygen-free copper or other thermal conductivities to be higher than 150k/Wm
-1K
-1High thermal conductivity material process.
7. diode-pumped nd yag laser gain module as claimed in claim 2 is characterized in that: described time gold-plated oxygen-free copper or the thermal conductivity of heat sink employing is higher than 150k/Wm
-1K
-1BeO, WCu alloy, AlN, MoCu alloy material process.
8. diode-pumped nd yag laser gain module according to claim 1 is characterized in that: the quantity of described even number annular pump laser group is identical with the quantity of the annular pump laser group of odd number or differ one.
9. diode-pumped nd yag laser gain module according to claim 2 is characterized in that: the limit number that described ring-type inner polygon is heat sink is the odd number on three～15 limits.
10. the preparation method of a diode-pumped nd yag laser gain module, it is characterized in that: described preparation method comprises the steps:
A. with the diode laser chips welding two time heat sink between, again insulating ceramic film is welded on time heat sink bottom, process " mountain " font time encapsulating structure;
B. will weld time encapsulation of good " mountain " font is installed on each limit of ring-type inner polygon heat sink (18) successively; And in the bottom of insulating ceramics solder application; An extraction electrode is connected with first diode laser chip; Another extraction electrode is connected with the last diode laser chip, and utilizes special fixture to fix;
The polygon heat sink (18) that c. will connect the diode laser chip is put into reflow soldering and is carried out disposable welding, forms odd number annular pump laser group;
D. even number annular pump laser group is identical with odd number annular pump laser group making step;
E. front end-plate (5), welding all even numbers annular pump laser groups, odd number annular pump laser group, end plate (6) well assembled through the screw serial connection; Rod-shaped laser medium (1) passes front end-plate (5), even number annular pump laser group, odd number annular pump laser group, end plate (6) successively, and rod-shaped laser medium (1) two ends are separately fixed on the end face of front end-plate (5), end plate (6);
F. the extraction electrode of even number annular pump laser group, odd number annular pump laser group is connected successively;
G. the liquid injection port (13) of cooling fluid (2) from diode-pumped nd yag laser gain module main body top is injected in the optically focused cavity; Make the liquid level of cooling fluid (2) flood extraction electrode; Through polymethyl methacrylate window (19) sealing liquid injection port (13), constitute diode-pumped nd yag laser gain module main body;
H. semiconductor cooler (7) is installed between diode-pumped nd yag laser gain module main body, the base (8), and smears thermal grease conduction;
I. the annular pumping laser array side mounting temperature detector of one of them in diode-pumped nd yag laser gain module main body (9) constitutes the diode-pumped nd yag laser gain module.
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| CN103779782A (en) * | 2014-01-08 | 2014-05-07 | 中国工程物理研究院应用电子学研究所 | High average power diode pumping laser module and preparation method thereof |
| CN106300003A (en) * | 2016-11-07 | 2017-01-04 | 中国工程物理研究院应用电子学研究所 | A kind of diode-pumped nd yag laser module packaging system |
| CN107946900A (en) * | 2017-12-29 | 2018-04-20 | 西安炬光科技股份有限公司 | A kind of semiconductor laser module |
| CN112636137A (en) * | 2020-12-31 | 2021-04-09 | 中国空间技术研究院 | Snake-shaped micro-channel radiator for laser strip crystal |
| CN114883895A (en) * | 2022-07-08 | 2022-08-09 | 中国工程物理研究院应用电子学研究所 | Ultra-compact light-weight composite cooling type immersion high-energy laser system |
| CN116799611A (en) * | 2023-08-28 | 2023-09-22 | 北京凯普林光电科技股份有限公司 | Side pump module and semiconductor laser |
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| CN103779782B (en) * | 2014-01-08 | 2016-07-06 | 中国工程物理研究院应用电子学研究所 | A kind of high-average power diode-pumped nd yag laser module and preparation method thereof |
| CN106300003A (en) * | 2016-11-07 | 2017-01-04 | 中国工程物理研究院应用电子学研究所 | A kind of diode-pumped nd yag laser module packaging system |
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