CN101593927A - A kind of semiconductor side pumping module - Google Patents
A kind of semiconductor side pumping module Download PDFInfo
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- CN101593927A CN101593927A CNA2009100671927A CN200910067192A CN101593927A CN 101593927 A CN101593927 A CN 101593927A CN A2009100671927 A CNA2009100671927 A CN A2009100671927A CN 200910067192 A CN200910067192 A CN 200910067192A CN 101593927 A CN101593927 A CN 101593927A
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Abstract
The invention provides a kind of semiconductor side pumping module.Adopt multidirectional uniform pumping technology, the guide quartz tube sidewall reduces the loss of pump light to pump light sectional making highly reflecting films and anti-reflection film, the laser crystal that adopts side making screw thread and the non-doped substrate of end face bonding to combine improves the absorption efficiency to pump light, reduce effect of end surface, the thermal lensing effect of laser crystal, and then improve the conversion efficiency and the beam quality of laser.Guide quartz tube adopt respectively the side wall segment plated film and not plated film test comparison, when pump power was 1KW, the former had improved 16% with respect to latter's efficient; In guide quartz tube not under the plated film state, when pump power was 1KW, the side made the laser crystal that screw thread and the non-doped substrate of end face bonding combine and has improved 9% with respect to common laser crystal conversion efficiency, and it is about 12% that thermal focal has shortened, beam quality M
2Value has reduced 17%.
Description
Technical field
Patent of the present invention relates to a kind of semiconductor side pumping module.
Background technology
Diode pumped solid state laser mainly is divided into two kinds from pump mode, be end face (vertically) pumping and side (laterally) pumping, the end pumping mode refers to pump light and encourages from the end face of laser crystal, and pump light is penetrated light direction with optical axis or identical with swashing; The profile pump mode refers to the side of pump light exciting laser crystal, pump light with swash that to penetrate light direction perpendicular.The former conversion efficiency is higher, is difficult to be adapted to the high power running, but has obtained using widely at the middle low power laser; Latter's conversion efficiency is low, but is easy to realize the high power running, is the first-selection of high power solid state laser.The laser medium of semiconductor side pumped solid laser device mainly contains lath-shaped crystal and rhabdolith, and the former laser beam of output is a rectangle, need carry out shaping to it during commercial Application, is unfavorable for using; The light beam of latter's output is suitable for commercial Application for the circle symmetry, is mode comparatively commonly used at present.
The semiconductor side pumped solid laser device is when high power turns round, because the rod-shaped laser crystal is in the cooling fluid, the temperature of rod-shaped laser germ nucleus is higher and lip temperature is approximately the temperature of cooling fluid, thereby the rod-shaped laser crystal cross section in present temperature gradient distribution, cause thermal lensing effect.Usually the rod-shaped laser crystal is the active ions that evenly mix, so the laser crystal two ends also absorb photon, and cooling effect is relatively poor near two end faces of laser crystal, often causes serious effect of end surface.
The quality of semiconductor side pumping module and manufacture method are the key factors of whole efficiency of laser of decision and beam quality, the researcher once adopted and two end faces was accomplished the concave surface that has curvature and the matrix of the non-doping of crystal end-face bonding overcomes effect of end surface, the former sensitivity of resonant cavity is higher, be unfavorable for debuging in actual the use, stability is also relatively poor; The latter has effect preferably.
The multidirectional uniform pumping technology of the many employings of semiconductor side pumping module is as patent (200610062537.6, a kind of pump cavity that is used for semiconductor side pumping module).Influence the low factor of laser electro-optical efficiency and mainly contain two aspects: the one, the efficient that pump light is coupled to the laser crystal surface is low, the 2nd, the absorption efficiency of laser crystal is low, the sorbent surface that these two kinds of factors can be summed up as laser crystal is little, greatly by laser crystal, and the absorption light path that pump light enters behind the laser crystal is shorter.The researcher successively adopts following method to improve the absorption efficiency of laser crystal to pump light.List of references [1] Chinese patent (200810044231.7, high combination property laser crystal and preparation method thereof) provides the method for making screw thread to improve the absorption efficiency of laser crystal, but still existed most pump light not incide plane of crystal and the situation of wasting pump light at laser crystal; List of references [2] Chinese patent (200710093817.8, high power thulium laser) adopting the ceramic reflecting body to be distributed on laser crystal makes pump light repeatedly pass through laser crystal on every side, but single comes and goes repeatedly transmission by the unabsorbed pump light of laser crystal between ceramic reflecting body, guide quartz tube, cooling fluid and laser crystal, energy loss is bigger.Adopt the post lens that the folded array semiconductor laser beam of level is coupled to the laser crystal surface in addition, though this makes pump beam all pass through laser crystal, the single absorption efficiency is still very low, and certain pump light of having inserted also loss of post lens.
Summary of the invention
For the conversion efficiency that improves the semiconductor side pumped solid laser device and the beam quality of outgoing laser beam, the invention provides a kind of semiconductor side pumping module.
As depicted in figs. 1 and 2, a kind of semiconductor side pumping module of the present invention comprises water swivel 1, outer end cap 2, inner end cap 3, laser crystal 4, gland 5, back-up ring 6, quartz ampoule 7, mozzle 8, hold-down screw 9 and semiconductor laser horizontal array 10 compositions;
Described water swivel 1 and inner end cap 3 are connected by screw thread, water-cooling channel in water swivel 1, back-up ring 6, quartz ampoule 7, mozzle 8 and the semiconductor laser horizontal array 10 constitutes the cooling water circulation canal, be positioned at a kind of two ends of semiconductor side pumping module, inner used heat derived by boiler water circulation;
Described inner end cap 3 is the circular body of hollow, be connected by hold-down screw 9 with semiconductor laser horizontal array 10, semiconductor laser horizontal array 10 is fixed, and be connected to form a water storage cavity by screw thread, to supply or to receive cooling water to water circulation channel with outer end cap 2;
The emission source that described laser crystal 4 is a 1064nm laser for bar-shaped Nd:YAG crystal, two end face bonding YAG matrix, mid portion is that Nd:YAG and side are made into shape of threads, is positioned at quartz ampoule 7 inside, two ends are connected with gland 5 with outer end cap 2 respectively; Gland 5 and outer end cap 2 are connected by screw thread, realize and 4 water-stops of laser crystal by the extruding rubber washer;
Described back-up ring 6 and inner end cap 3 are connected by screw thread, realize and 13 water-stops of quartz ampoule by the extruding rubber washer;
Described quartz ampoule 7 two ends are connected with back-up ring 6, inner end cap 3 respectively; The lateral surface of quartz ampoule 7 is coated with anti-reflection film and highly reflecting films to the 808nm section gap;
The part of semiconductor laser horizontal array 10 luminous zones irradiation is coated with the 808nm anti-reflection film, and other parts are coated with the 808nm highly reflecting films;
Described mozzle 8 is connected by screw thread with the inner end cap 3 at two ends respectively, and realize and 3 water-stops of inner end cap by the extruding rubber washer, inner end cap 3 realize by the extruding rubber washer and semiconductor laser horizontal array 10 in water-stop between water stream channel, and the aquaporin that cooling water imports semiconductor laser horizontal array 10 cooled off it;
Semiconductor laser horizontal array 10 is positioned at a kind of middle part of semiconductor side pumping module, be evenly distributed on quartz ampoule 7 around, provide exciting light to laser crystal 4; Semiconductor laser horizontal array 10 props up for the 3-11 odd number, and preferred amount is 5.
Beneficial effect: the present invention adopts multidirectional uniform pumping technology, the guide quartz tube sidewall reduces the loss of pump light to pump light sectional making highly reflecting films and anti-reflection film, the laser crystal that adopts side making screw thread and the non-doped substrate of end face bonding to combine improves the absorption efficiency to pump light, reduce effect of end surface, the thermal lensing effect of laser crystal, and then improve the conversion efficiency and the beam quality of laser.Guide quartz tube adopt respectively the side wall segment plated film and not plated film test comparison, when pump power was 1KW, the former had improved 16% with respect to latter's efficient; In guide quartz tube not under the plated film state, when pump power was 1KW, the side made the laser crystal that screw thread and the non-doped substrate of end face bonding combine and has improved 9% with respect to common laser crystal conversion efficiency, and it is about 12% that thermal focal has shortened, beam quality M
2Value has reduced 17%.
Description of drawings
Fig. 1 is a kind of longitudinal sectional drawing of semiconductor side pumping module.
Fig. 2 is a kind of cross-sectional view of semiconductor side pumping module.
1-water swivel, 2-outer end cap, 3-inner end cap, 4-laser crystal, 5-gland, 6-back-up ring, 7-quartz ampoule, 8-mozzle, 9-hold-down screw, 10-semiconductor laser horizontal array among the figure.
Embodiment
Embodiment 1 as depicted in figs. 1 and 2, a kind of semiconductor side pumping module of the present invention comprises that water swivel 1, outer end cap 2, inner end cap 3, laser crystal 4, gland 5, back-up ring 6, quartz ampoule 7, mozzle 8, hold-down screw 9 and semiconductor laser horizontal array 10 form;
Described water swivel 1 and inner end cap 3 are connected by screw thread, water-cooling channel in water swivel 1, back-up ring 6, quartz ampoule 7, mozzle 8 and the semiconductor laser horizontal array 10 constitutes the cooling water circulation canal, be positioned at a kind of two ends of semiconductor side pumping module, inner used heat derived by boiler water circulation;
Described inner end cap 3 is the circular body of hollow, be connected by hold-down screw 9 with semiconductor laser horizontal array 10, realization is fixing with semiconductor laser horizontal array 10, and with outer end cap 2 by screw thread be connected to form a water storage cavity with to water circulation channel for or compile cooling water;
The emission source that described laser crystal 4 is a 1064nm laser for bar-shaped Nd:YAG crystal, two end face bonding YAG matrix, mid portion is that Nd:YAG and side are made into shape of threads, is positioned at quartz ampoule 7 inside, two ends are connected with gland 5 with outer end cap 2 respectively; Gland 5 and outer end cap 2 are connected by screw thread, realize and 4 water-stops of laser crystal by the extruding rubber washer; Laser crystal 4 physical dimensions are ￠ 8mm * 160mm, two long YAG matrix of end face difference bonding 7.5mm, and mid portion is that Nd:YAG and side are made into shape of threads, Nd
3+Doping content is 0.7%.The end face of laser crystal 4 is coated with the anti-reflection film of penetrating light to swashing, and transmissivity is more than 99.5%;
Described back-up ring 6 and inner end cap 3 are connected by screw thread, realize and 13 water-stops of quartz ampoule by the extruding rubber washer;
Described quartz ampoule 7 two ends are connected with back-up ring 6, inner end cap 3 respectively; The internal diameter of quartz ampoule 7 is ￠ 12mm, and wall thickness is 1.5mm, and length is 145mm, and lateral surface is coated with anti-reflection film and highly reflecting films to the 808nm section gap;
The part of semiconductor laser array 10 luminous zones irradiation is coated with the 808nm anti-reflection film, and other parts are coated with the 808nm highly reflecting films;
Described mozzle 8 is connected by screw thread with the inner end cap 3 at two ends respectively, and realize and 3 water-stops of inner end cap by the extruding rubber washer, inner end cap 3 realize by the extruding rubber washer and semiconductor laser horizontal array 10 in water-stop between water stream channel, and the aquaporin that cooling water imports semiconductor laser horizontal array 10 cooled off it;
Semiconductor laser horizontal array 10 is positioned at a kind of middle part of semiconductor side pumping module, be evenly distributed on quartz ampoule 7 around, provide exciting light to laser crystal 4; Semiconductor laser horizontal array 10 is for odd number props up, and preferred amount is 5.
Semiconductor laser horizontal array 10 is positioned at a kind of middle part of semiconductor side pumping module, quantity is 5, be evenly distributed on quartz ampoule 7 around, provide exciting light to laser crystal 4,7 semiconductor fragrant plant bars of level encapsulation on every semiconductor laser horizontal array 10, total pumping light power is 1.4KW to the maximum.The folded battle array of level luminous zone is shorter than the reach of laser crystal 4 on optical axis direction.
Quartz ampoule 7 adopt respectively the side wall segment plated film and not plated film test comparison, when pump power was 1KW, the former had improved 16% with respect to latter's efficient; In guide quartz tube not under the plated film state, when pump power was 1KW, the side made the laser crystal that screw thread and the non-doped substrate of end face bonding combine and has improved 9% with respect to common laser crystal conversion efficiency, and it is about 12% that thermal focal has shortened, beam quality M
2Value has reduced 17%.
Embodiment 2 as depicted in figs. 1 and 2, the quantity of semiconductor laser horizontal array 10 is 3, evenly be evenly distributed on quartz ampoule 7 around, other is with embodiment 1.
Embodiment 4 as depicted in figs. 1 and 2, the quantity of semiconductor laser horizontal array 10 is 9, evenly be evenly distributed on quartz ampoule 7 around, other is with embodiment 1.
Embodiment 5 as depicted in figs. 1 and 2, the quantity of semiconductor laser horizontal array 10 is 11, evenly be evenly distributed on quartz ampoule 7 around, other is with embodiment 1.
Claims (2)
1, a kind of semiconductor side pumping module, it is characterized in that its formation comprises water swivel (1), outer end cap (2), inner end cap (3), laser crystal (4), gland (5), back-up ring (6), quartz ampoule (7), mozzle (8), hold-down screw (9) and semiconductor laser horizontal array (10) composition;
Described water swivel (1) is connected by screw thread with inner end cap (3), water-cooling channel in water swivel (1), back-up ring (6), quartz ampoule (7), mozzle (8) and the semiconductor laser horizontal array (10) constitutes the cooling water circulation canal, be positioned at a kind of two ends of semiconductor side pumping module, inner used heat derived by boiler water circulation;
Described inner end cap (3) is the circular body of hollow, be connected by hold-down screw (9) with semiconductor laser horizontal array (10), semiconductor laser horizontal array (10) is fixing, and be connected to form a water storage cavity with outer end cap (2) by screw thread, with to water circulation channel for or receive cooling water;
The emission source that described laser crystal (4) is a 1064nm laser for bar-shaped Nd:YAG crystal, two end face bonding YAG matrix, mid portion is that Nd:YAG and side are made into shape of threads, is positioned at quartz ampoule (7) inside, and two ends are connected with gland (5) with outer end cap (2) respectively; Gland (5) is connected by screw thread with outer end cap (2), by water-stop between realization of extruding rubber washer and laser crystal (4);
Described back-up ring (6) is connected by screw thread with inner end cap (3), by water-stop between realization of extruding rubber washer and quartz ampoule (13);
Described quartz ampoule (7) two ends are connected with back-up ring (6), inner end cap (3) respectively; The lateral surface of quartz ampoule (7) is coated with anti-reflection film and highly reflecting films to the 808nm section gap;
The part of semiconductor laser horizontal array (10) luminous zone irradiation is coated with the 808nm anti-reflection film, and other parts are coated with the 808nm highly reflecting films;
Described mozzle (8) is connected by screw thread with the inner end cap (3) at two ends respectively, and by water-stop between realization of extruding rubber washer and inner end cap (3), inner end cap (3) by the extruding rubber washer realize with the middle water stream channel of semiconductor laser horizontal array (10) between water-stop, and the aquaporin that cooling water imports semiconductor laser horizontal array (10) cooled off it;
Semiconductor laser horizontal array (10) is positioned at a kind of middle part of semiconductor side pumping module, be evenly distributed on quartz ampoule (7) around, provide exciting light to laser crystal (4); The quantity of semiconductor laser horizontal array (10) is propped up for the 3-11 odd number.
2, a kind of semiconductor side pumping module as claimed in claim is characterized in that, the quantity of described semiconductor laser horizontal array (10) is 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100671927A CN101593927B (en) | 2009-06-30 | 2009-06-30 | Semiconductor side pumping module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100671927A CN101593927B (en) | 2009-06-30 | 2009-06-30 | Semiconductor side pumping module |
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| CN101593927A true CN101593927A (en) | 2009-12-02 |
| CN101593927B CN101593927B (en) | 2011-09-28 |
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| CN2009100671927A Expired - Fee Related CN101593927B (en) | 2009-06-30 | 2009-06-30 | Semiconductor side pumping module |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102495931A (en) * | 2011-12-14 | 2012-06-13 | 长春理工大学 | Finite element method for analyzing thermal characteristic of threaded solid laser medium of side pump |
| CN102820610A (en) * | 2012-09-06 | 2012-12-12 | 中国工程物理研究院应用电子学研究所 | Diode pumping laser gain module and preparation method thereof |
| CN104319602A (en) * | 2014-11-05 | 2015-01-28 | 中国工程物理研究院激光聚变研究中心 | Strip laser amplifier and laser output method thereof |
| CN104332807A (en) * | 2014-11-05 | 2015-02-04 | 中国工程物理研究院激光聚变研究中心 | Slab laser amplifier and laser output method |
| CN109273976A (en) * | 2018-11-27 | 2019-01-25 | 长春理工大学 | A kind of laser gain medium pumping configuration for solid state laser |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969646A (en) * | 2012-11-12 | 2013-03-13 | 中国科学院上海光学精密机械研究所 | Jacket pipe of plating reflecting film |
-
2009
- 2009-06-30 CN CN2009100671927A patent/CN101593927B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102495931A (en) * | 2011-12-14 | 2012-06-13 | 长春理工大学 | Finite element method for analyzing thermal characteristic of threaded solid laser medium of side pump |
| CN102820610A (en) * | 2012-09-06 | 2012-12-12 | 中国工程物理研究院应用电子学研究所 | Diode pumping laser gain module and preparation method thereof |
| CN102820610B (en) * | 2012-09-06 | 2015-02-11 | 中国工程物理研究院应用电子学研究所 | Diode pumping laser gain module and preparation method thereof |
| CN104319602A (en) * | 2014-11-05 | 2015-01-28 | 中国工程物理研究院激光聚变研究中心 | Strip laser amplifier and laser output method thereof |
| CN104332807A (en) * | 2014-11-05 | 2015-02-04 | 中国工程物理研究院激光聚变研究中心 | Slab laser amplifier and laser output method |
| CN109273976A (en) * | 2018-11-27 | 2019-01-25 | 长春理工大学 | A kind of laser gain medium pumping configuration for solid state laser |
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| Publication number | Publication date |
|---|---|
| CN101593927B (en) | 2011-09-28 |
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