CN101572384A - Combined continuous full-solid state Raman laser - Google Patents
Combined continuous full-solid state Raman laser Download PDFInfo
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- CN101572384A CN101572384A CNA2009101112253A CN200910111225A CN101572384A CN 101572384 A CN101572384 A CN 101572384A CN A2009101112253 A CNA2009101112253 A CN A2009101112253A CN 200910111225 A CN200910111225 A CN 200910111225A CN 101572384 A CN101572384 A CN 101572384A
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Abstract
The invention provides a combined continuous full-solid state Raman laser with compact structure, comprising a laser cavity formed by a semiconductor laser end-pumped system, a coated laser input cavity mirror and a coated output cavity mirror; a combination crystal is placed in the laser cavity; wherein, the combination crystal is formed by an undoped host crystal with Raman effect and laser gain medium bonding or optical consumption formed by doping Nd<3+> into the host crystal. The invention overcomes the defect that the laser gain medium and the Raman gain medium in the current solid Raman laser are separated, thereby effectively reducing the thermal effect of the laser medium and improving the laser beam quality and system stability.
Description
Technical field
The present invention relates to the Solid State Laser field, particularly a kind of combined continuous full-solid state Raman laser.
Technical background
By the raman laser technological expansion the present conventional solid state laser laser wavelength range that can arrive, particularly can obtain eye-safe 1.5 micron waveband laser and obtain gold-tinted laser, so Raman laser has become the research focus of present laser technology by the raman laser frequency multiplication.2007, James A.Piper and HelenM.Pask delivered Raman review article (" Crystalline Raman Lasers; " IEEE J.Sel.Top.Quantum Electron.13,692-704 (2007)), set forth the present Research of raman laser.In June, 2005, Chinese patent discloses CN 1624992A number " self-excited solid laman laser " patent application, this patent relate to same crystal be gain medium be again the Raman frequency shift medium, obtain raman laser output.In January, 2008, the Chinese patent mandate CN 100365887C number " separation type Raman laser in full solid state " patent, this patent relates to gain medium and Raman frequency shift medium isolating construction, obtains raman laser output.Up to the present, all all solid state lasers about Raman all are to adopt gain medium and raman gain medium isolating construction or obtain from Raman, and these methods all can not effectively overcome the restriction to laser output power and beam quality of gain medium thermal effect and raman gain medium length.At these problems, the present invention improves this, has proposed knockdown full-solid state Raman laser.
Summary of the invention
The full-solid state Raman laser that the purpose of this invention is to provide a kind of compact conformation adopts to have the host crystal of Raman effect and mix Nd with this host crystal unadulterated
3+The technology path of gain medium (the being laser crystal again) combination that forms, overcoming the restriction of gain medium thermal effect and raman gain medium length to laser output power and beam quality, thus the output of the raman laser of implementation efficiency height, good beam quality.
Purpose of the present invention realizes by following technical measures: combined continuous full-solid state Raman laser, comprise the laser input cavity mirror 2 of semiconductor laser end pumping system 1, plated film and the laser cavity that output cavity mirror 5 constitutes, in laser cavity, place interwoven crystal and can realize continuous raman laser output.
Described interwoven crystal is had the host crystal 3 of Raman effect and is mixed Nd with this host crystal by unadulterated
3+Gain medium 4 optical cements that form or bonding (bonding is by carry out a kind of technology that ions diffusion realizes firm combination behind the optical cement under hot conditions between the crystal) form, and its structure comprises that following three kinds of modes make up: the unadulterated host crystal 3 with Raman effect of gain medium 4 front-end and back-end optical cements or bonding; The unadulterated host crystal 3 of gain medium 4 front end optical cements or bonding with Raman effect; The unadulterated host crystal 3 of gain medium 4 rear end optical cements or bonding with Raman effect.
Described unadulterated host crystal 3 with Raman effect is vanadate crystal (YVO
4Or GdVO
4Or YGdVO
4) or tungstate crystal (KGW or SrWO
4Or BaWO
4); Mix Nd
3+Gain medium 4 is the Nd that mixes of matrix for the host crystal with Raman effect with above-mentioned correspondence
3+Laser crystal is wherein mixed Nd
3+Concentration and crystalline size can be selected according to actual needs.
Described semiconductor laser end pumping system 1 can select near the diode-end-pumped of wavelength 808nm or the 880nm for use.
That described laser input cavity mirror 2 is coated with is anti-reflection near wavelength pump light 808nm or the 880nm, simultaneously to 1.06 microns fundamental waves and the 1.17 microns high anti-films of Raman light systems; Laser output cavity mirror 5 be coated with to 1.06 microns fundamental wave height instead, the film system that simultaneously 1.17 microns Raman lights partly seen through.
Description of drawings
Fig. 1 is the two ends combined continuous full-solid state Raman laser; Fig. 2 is the front end combined continuous full-solid state Raman laser; Fig. 3 is the rear end combined continuous full-solid state Raman laser.Wherein 1: semiconductor laser end pumping system; 2: laser input cavity mirror; 3: unadulterated host crystal with Raman effect; 4: mix Nd
3 +Gain medium; 5: laser output cavity mirror.
Embodiment
The embodiment one of combined continuous full-solid state Raman laser of the present invention:
Interwoven crystal is by mixing Nd
3+The unadulterated host crystal 3 with Raman effect of gain medium 4 front-end and back-end optical cements or bonding, interwoven crystal structure are that unadulterated host crystal 3/ with Raman effect is mixed Nd
3+Gain medium 4/ unadulterated host crystal 3 with Raman effect.The pump light of this scheme semiconductor laser end pumping system 1 is incided in the interwoven crystal by laser input cavity mirror 2, and the unadulterated host crystal 3 with Raman effect by front end earlier is again by Nd
3+Gain medium absorbs 4, and the fundamental wave of launching respective wavelength then vibrates in laser cavity, again by mixing Nd
3+ Unadulterated host crystal 3 three parts with Raman effect at gain medium 4 and two ends are used as raman gain medium jointly fundamental wave are converted into raman laser, by the continuous raman laser of laser output cavity mirror 5 parts output.
The embodiment two of combined continuous full-solid state Raman laser of the present invention:
Interwoven crystal is by by mixing Nd
3+The unadulterated host crystal 3 with Raman effect of gain medium 4 front end optical cements or bonding, interwoven crystal structure are that unadulterated host crystal 3/ with Raman effect is mixed Nd
3 +Gain medium 4.The pump light of this scheme semiconductor laser end pumping system 1 is incided in the interwoven crystal by laser input cavity mirror 2, earlier by unadulterated host crystal 3 with Raman effect, is mixed Nd again
3+Gain medium 4 absorbs, and the fundamental wave of launching respective wavelength then vibrates in laser cavity, is had the host crystal 3 of Raman effect and is mixed Nd by unadulterated again
3+Gain medium 4 two parts are used as raman gain medium jointly fundamental wave are converted into raman laser, by the continuous raman laser of laser output cavity mirror 5 parts output.
The embodiment three of combined continuous full-solid state Raman laser of the present invention:
Interwoven crystal is by mixing Nd
3+The unadulterated host crystal 3 with Raman effect of gain medium 4 rear end optical cements or bonding, the interwoven crystal structure is for mixing Nd
3+Gain medium 4/ unadulterated host crystal 3 with Raman effect.The pump light of this scheme semiconductor laser end pumping system 1 is incided in the interwoven crystal by laser input cavity mirror 2, is mixed Nd earlier
3+Gain medium 4 absorbs, and the fundamental wave of launching respective wavelength then vibrates in laser cavity, again by mixing Nd
3+Gain medium 4 and unadulterated host crystal 3 two parts with Raman effect are used as raman gain medium jointly fundamental wave are converted into raman laser, by the continuous raman laser of laser output cavity mirror 5 parts output.
More than three kinds of schemes use the composite type crystal design, make unadulterated host crystal 3 to help mix Nd by heat conduction with Raman effect
3+Gain medium 4 heat radiations are mixed Nd thereby effectively reduce
3+The thermal effect of gain medium 4; And unadulterated host crystal with Raman effect 3 and mix Nd
3+Gain medium 4 can be used as raman gain medium jointly, has effectively prolonged the Raman action length, helps improving continuously the Raman transformation efficiency.
Embodiment 1: according to Fig. 1, make the combined continuous full-solid state Raman laser of a compact conformation.By 1 beginning of semiconductor laser end pumping system, place laser input cavity mirror 2, interwoven crystal, laser output cavity mirror 5 on the light path successively.
Interwoven crystal is unadulterated host crystal YVO with Raman effect
43 to be combined to it by optical cement or bonding be the Nd that mixes of matrix
3+Gain medium Nd:YVO
44 front-end and back-end, interwoven crystal structure are YVO
43/Nd:YVO
44/YVO
43.The unadulterated host crystal YVO of wherein employed front end with Raman effect
43 are of a size of 3 * 3 * 5mm
3, the unadulterated host crystal YVO in rear end with Raman effect
43 are of a size of 3 * 3 * 8mm
3, mix Nd
3+Concentration is the gain medium Nd:YVO of 0.5-at.%
44 are of a size of 3 * 3 * 7mm
3Laser input cavity mirror 2 is coated with the pump light of 808nm wavelength anti-reflection simultaneously to the high anti-film of the laser system of 1.06 microns and 1.17 micron wave lengths, and laser output cavity mirror 5 is coated with near the high anti-film system that simultaneously 1.17 micron wave length laser parts is seen through of wavelength laser 1.06 microns.Semiconductor laser end pumping system 1 adopts the semiconductor laser of optical fiber coupling, peak power output 30W, and emission center wavelength is 808nm, and the optical fiber core diameter is 200 μ m, and numerical aperture is 0.12.The collimation focusing system post-concentration that pump light is formed through the spherical lens that is 60mm by two focal lengths incides in the interwoven crystal by laser input cavity mirror 2, earlier by the unadulterated host crystal YVO with Raman effect of front end
43, focus on again and mix Nd
3+Gain medium Nd:YVO
4Be absorbed in 4, the fundamental wave of launching 1.06 micron wave lengths then vibrates in laser cavity, again by mixing Nd
3+Gain medium Nd:YVO
44 and the unadulterated host crystal YVO at two ends with Raman effect
43 three parts are used as the raman laser that raman gain medium is converted into 1.06 micron wave length fundamental waves 1.17 micron wave lengths jointly, so the effective interaction length of raman gain medium is 20mm, effectively raise the transformation efficiency of Raman, by laser output cavity mirror 5 outputs 1.17 micron wave length continuous Raman laser.
Embodiment 2: according to Fig. 2, make the combined continuous full-solid state Raman laser of a compact conformation.By 1 beginning of semiconductor laser end pumping system, place laser input cavity mirror 2, interwoven crystal and laser output cavity mirror 5 on the light path successively.
Interwoven crystal is unadulterated host crystal YVO with Raman effect
43 to be combined to it by bonding be the Nd that mixes of matrix
3+Gain medium Nd:YVO
44 front end, interwoven crystal structure are YVO
43/Nd:YVO
44.Wherein employed unadulterated host crystal YVO with Raman effect
43 are of a size of 3 * 3 * 4mm
3, mix Nd
3+Concentration is the gain medium Nd:YVO of 0.3-at.%
44 are of a size of 3 * 3 * 15mm
3Laser input cavity mirror 2 is coated with the pump light of 808nm wavelength anti-reflection simultaneously to the high anti-film of the laser system of 1.06 microns and 1.17 micron wave lengths, and laser output cavity mirror 5 is coated with near the high anti-film system that simultaneously 1.17 micron wave length laser parts is seen through of wavelength laser 1.06 microns.Semiconductor laser end pumping system 1 adopts the semiconductor laser of optical fiber coupling, peak power output 30W, and emission center wavelength is 808nm, and the optical fiber core diameter is 200 μ m, and numerical aperture is 0.12.The collimation focusing system post-concentration that pump light is formed through the spherical lens that is 60mm by two focal lengths incides in the interwoven crystal by laser input cavity mirror 2, earlier by unadulterated host crystal YVO with Raman effect
43, focus on again and mix Nd
3+Gain medium Nd:YVO
4Be absorbed in 4, the fundamental wave of launching 1.06 micron wave lengths then vibrates in laser cavity, again by unadulterated host crystal YVO with Raman effect
43 and mix Nd
3+Gain medium Nd:YVO
44 two parts are used as the raman laser that raman gain medium is converted into 1.06 micron wave length fundamental waves 1.17 micron wave lengths jointly, so the effective interaction length of raman gain medium is 19mm, effectively raise the transformation efficiency of Raman, by laser output cavity mirror 5 outputs 1.17 micron wave length continuous Raman laser.
Embodiment 3: according to Fig. 3, make the combined continuous full-solid state Raman laser of a compact conformation.By 1 beginning of semiconductor laser end pumping system, place laser input cavity mirror 2, interwoven crystal, laser output cavity mirror 5 on the light path successively.
Interwoven crystal is unadulterated host crystal YVO with Raman effect
43 to be combined to it by bonding be the Nd that mixes of matrix
3+Gain medium Nd:YVO
44 rear end, interwoven crystal structure are Nd:YVO
44/YVO
43.Wherein employed unadulterated host crystal YVO with Raman effect
43 are of a size of 3 * 3 * 10mm
3, mix Nd
3+Concentration is the gain medium Nd:YVO of 0.4-at.%
44 are of a size of 3 * 3 * 12mm
3Laser input cavity mirror 2 is coated with the pump light of 808nm wavelength anti-reflection simultaneously to the high anti-film of the laser system of 1.06 microns and 1.17 micron wave lengths, and laser output cavity mirror 5 is coated with near the high anti-film system that simultaneously 1.17 micron wave length laser parts is seen through of wavelength laser 1.06 microns.Semiconductor laser end pumping system 1 adopts the semiconductor laser of optical fiber coupling, peak power output 30W, and emission center wavelength is 808nm, and the optical fiber core diameter is 200 μ m, and numerical aperture is 0.12.The collimation focusing system post-concentration that pump light is formed through the spherical lens that is 60mm by two focal lengths incides in the interwoven crystal by laser input cavity mirror 2, is mixed Nd earlier
3+Gain medium Nd:YVO
44 absorb, and the fundamental wave of launching 1.06 micron wave lengths then vibrates in laser cavity, again by mixing Nd
3+Gain medium Nd:YVO
44 and unadulterated host crystal YVO with Raman effect
43 two parts are used as the raman laser that raman gain medium is converted into 1.06 micron wave length fundamental waves 1.17 micron wave lengths jointly, so the effective interaction length of raman gain medium is 22mm, effectively raise the transformation efficiency of Raman, by laser output cavity mirror 5 outputs 1.17 micron wave length continuous Raman laser.
Embodiment 4: according to Fig. 1 (or Fig. 2 or Fig. 3), make the combined continuous full-solid state Raman laser of a compact conformation.The compound mode of different with embodiment 8,9,10 is interwoven crystal is unadulterated host crystal YVO with Raman effect
43 to be combined to it by optical cement be the Nd that mixes of matrix
3+Gain medium Nd:YVO
44 two ends, the combined continuous full-solid state Raman laser that obtains.
Embodiment 12: according to Fig. 1 (or Fig. 2 or Fig. 3), make the combined continuous full-solid state Raman laser of a compact conformation.The unadulterated vanadate crystal (GdVO that different with embodiment 8,9,10,11 is in the interwoven crystal with host crystal 3 of Raman effect for other
4Or YGdVO
4) or tungstate crystal (KGW or SrWO
4Or BaWO
4); Gain medium 4 is matrix for correspondence with above-mentioned host crystal with Raman effect, doping Nd
3+Laser crystal, the combined continuous full-solid state Raman laser that obtains.
Embodiment 13: according to Fig. 4 (or Fig. 5 or Fig. 6), make the combined continuous full-solid state Raman laser of a compact conformation.Different with embodiment 8,9,10,11,12 is the semiconductor laser that adopts the optical fiber coupling when semiconductor laser end pumping system 1, and emission center wavelength is 880nm, the combined continuous full-solid state Raman laser that obtains.With the semiconductor laser of this centre wavelength, the quantum loss that makes pump light be transformed into fundamental wave is lost little than the quantum that adopts the pumping of centre wavelength 808nm wavelength, thereby more effective minimizing thermal effect improves lasing efficiency.
Claims (8)
1. combined continuous full-solid state Raman laser, comprise laser cavity, it is characterized in that: place interwoven crystal in the described laser cavity and be used to produce fundamental frequency light and frequency conversion generation continuous Raman laser, this interwoven crystal is had the host crystal of Raman effect and is mixed Nd with this host crystal by unadulterated
3+Gain medium bonding that forms or optical cement form.
2. by the described combined continuous full-solid state Raman laser of claim 1, it is characterized in that: described interwoven crystal is at described gain medium front-end and back-end bonding or the unadulterated host crystal with Raman effect of optical cement.
3. by the described combined continuous full-solid state Raman laser of claim 1, it is characterized in that: described interwoven crystal is at described gain medium front end bonding or the unadulterated host crystal with Raman effect of optical cement.
4. by the described combined continuous full-solid state Raman laser of claim 1, it is characterized in that: described interwoven crystal is at described gain medium rear end bonding or the unadulterated host crystal with Raman effect of optical cement.
5. by the described combined continuous full-solid state Raman laser of claim 1, it is characterized in that: described host crystal is vanadate crystal or tungstate crystal.
6. by the described combined continuous full-solid state Raman laser of claim 5, it is characterized in that: described vanadate crystal is selected from YVO
4Or GdVO
4Or YGdVO
4Described tungstate crystal is selected from KGW or SrWO
4Or BaWO
4
7. by the described combined continuous full-solid state Raman laser of claim 1, it is characterized in that: this laser adopts semiconductor laser end pumping system.
8. by the described combined continuous full-solid state Raman laser of claim 7, it is characterized in that: described semiconductor laser end pumping system selects near the diode-end-pumped of wavelength 808nm or the 880nm for use.
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| CNA2009101112253A CN101572384A (en) | 2009-03-13 | 2009-03-13 | Combined continuous full-solid state Raman laser |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044839A (en) * | 2010-11-18 | 2011-05-04 | 苏州生物医学工程技术研究所 | Bi-wavelength transition stimulated Raman sum frequency laser wavelength conversion equipment |
| CN102055129A (en) * | 2010-11-18 | 2011-05-11 | 苏州生物医学工程技术研究所 | Self-stimulated Raman sum frequency laser wavelength conversion device with compact structure |
| CN102534790A (en) * | 2012-01-19 | 2012-07-04 | 山东大学 | Garnet composite crystal with multi-segment doping concentration gradient and growing method thereof |
| CN103296570A (en) * | 2012-03-02 | 2013-09-11 | 中国科学院理化技术研究所 | Single longitudinal mode frequency-conversion all-solid-state laser based on non-planar ring cavity structure |
| CN108493756A (en) * | 2018-02-07 | 2018-09-04 | 杭州电子科技大学 | One kind being based on Nd:YVO4/Nd:GdVO4The two-frequency laser of interwoven crystal |
-
2009
- 2009-03-13 CN CNA2009101112253A patent/CN101572384A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044839A (en) * | 2010-11-18 | 2011-05-04 | 苏州生物医学工程技术研究所 | Bi-wavelength transition stimulated Raman sum frequency laser wavelength conversion equipment |
| CN102055129A (en) * | 2010-11-18 | 2011-05-11 | 苏州生物医学工程技术研究所 | Self-stimulated Raman sum frequency laser wavelength conversion device with compact structure |
| CN102534790A (en) * | 2012-01-19 | 2012-07-04 | 山东大学 | Garnet composite crystal with multi-segment doping concentration gradient and growing method thereof |
| CN102534790B (en) * | 2012-01-19 | 2014-11-05 | 山东大学 | Garnet composite crystal with multi-segment doping concentration gradient and growing method thereof |
| CN103296570A (en) * | 2012-03-02 | 2013-09-11 | 中国科学院理化技术研究所 | Single longitudinal mode frequency-conversion all-solid-state laser based on non-planar ring cavity structure |
| CN108493756A (en) * | 2018-02-07 | 2018-09-04 | 杭州电子科技大学 | One kind being based on Nd:YVO4/Nd:GdVO4The two-frequency laser of interwoven crystal |
| CN108493756B (en) * | 2018-02-07 | 2020-06-12 | 杭州电子科技大学 | YVO based on Nd4/Nd:GdVO4Double-frequency laser of combined crystal |
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Application publication date: 20091104 |