CN108493756B - YVO based on Nd4/Nd:GdVO4Double-frequency laser of combined crystal - Google Patents

YVO based on Nd4/Nd:GdVO4Double-frequency laser of combined crystal Download PDF

Info

Publication number
CN108493756B
CN108493756B CN201810122328.9A CN201810122328A CN108493756B CN 108493756 B CN108493756 B CN 108493756B CN 201810122328 A CN201810122328 A CN 201810122328A CN 108493756 B CN108493756 B CN 108493756B
Authority
CN
China
Prior art keywords
crystal
laser
yvo4
gdvo4
temperature control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810122328.9A
Other languages
Chinese (zh)
Other versions
CN108493756A (en
Inventor
胡淼
金涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inno Laser Technology Corp ltd
Original Assignee
Hangzhou Dianzi University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hangzhou Dianzi University filed Critical Hangzhou Dianzi University
Priority to CN201810122328.9A priority Critical patent/CN108493756B/en
Publication of CN108493756A publication Critical patent/CN108493756A/en
Application granted granted Critical
Publication of CN108493756B publication Critical patent/CN108493756B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/163Solid materials characterised by a crystal matrix
    • H01S3/1671Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
    • H01S3/1673YVO4 [YVO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/1028Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/163Solid materials characterised by a crystal matrix
    • H01S3/1671Solid materials characterised by a crystal matrix vanadate, niobate, tantalate

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Lasers (AREA)

Abstract

本发明公开了一种基于Nd:YVO4/Nd:GdVO4组合晶体的双频激光器,包括Nd:YVO4/Nd:GdVO4组合晶体、热沉温控模块、泵浦模块、激光谐振腔及输出模块;泵浦模块发射泵浦光,Nd:YVO4/Nd:GdVO4组合晶体接收泵浦光并经激光谐振腔后受激放大形成双频激光,输出模块接收并输出经激光谐振腔调整的双频激光;Nd:YVO4/Nd:GdVO4组合晶体安置于热沉温控模块,热沉温控模块用于控制Nd:YVO4/Nd:GdVO4组合晶体的温度。本发明采用Nd:YVO4/Nd:GdVO4组合晶体作为增益介质,能够在接收泵浦光辐射时产生大频差的双频激光光束,并经过激光谐振腔及输出模块调整双频激光的光束质量。另外,还可通过热沉温控模块实时调整组合晶体的温度,从而实现对双频激光功率均衡度的调节。

Figure 201810122328

The invention discloses a dual-frequency laser based on an Nd:YVO 4 /Nd:GdVO 4 combined crystal, comprising an Nd: YVO 4 /Nd: GdVO 4 combined crystal, a heat sink temperature control module, a pumping module, a laser resonant cavity and a Output module; the pump module emits the pump light, the Nd:YVO 4 /Nd: GdVO 4 combination crystal receives the pump light and is stimulated and amplified by the laser resonator to form a dual-frequency laser, and the output module receives and outputs the adjusted laser resonator The Nd:YVO 4 /Nd:GdVO 4 combination crystal is placed in the heat sink temperature control module, and the heat sink temperature control module is used to control the temperature of the Nd: YVO 4 /Nd: GdVO 4 combination crystal. The invention adopts the Nd:YVO 4 /Nd: GdVO 4 composite crystal as the gain medium, can generate a double-frequency laser beam with a large frequency difference when receiving the pump light radiation, and adjust the double-frequency laser beam through the laser resonant cavity and the output module quality. In addition, the temperature of the combined crystal can be adjusted in real time through the heat sink temperature control module, so as to realize the adjustment of the power balance of the dual-frequency laser.

Figure 201810122328

Description

一种基于Nd:YVO4/Nd:GdVO4组合晶体的双频激光器A Dual Frequency Laser Based on Nd:YVO4/Nd:GdVO4 Combination Crystal

技术领域technical field

本发明涉及双频激光器及光生毫米波技术领域,尤其涉及一种基于Nd:YVO4/Nd:GdVO4组合晶体的双频激光器。The invention relates to the technical field of dual-frequency lasers and optically generated millimeter waves, in particular to a dual-frequency laser based on an Nd:YVO 4 /Nd:GdVO 4 combination crystal.

背景技术Background technique

近年来,随着移动互联网的快速发展,各种新型无线通信业务迭出,网络数据量呈现指数式增长,有限的频谱资源变得越来越稀缺。相较于传统微波信号,频率更高的毫米波和亚毫米波信号具有带宽更大、波束更窄和抗干扰能力更强等优点。最新的5G网络已经开始使用毫米波作为其超高速通信的频段。In recent years, with the rapid development of the mobile Internet, various new wireless communication services have emerged one after another, the amount of network data has grown exponentially, and limited spectrum resources have become increasingly scarce. Compared with traditional microwave signals, higher frequency millimeter wave and submillimeter wave signals have the advantages of larger bandwidth, narrower beam and stronger anti-interference ability. The latest 5G networks have started using millimeter waves as the frequency band for their ultra-high-speed communications.

目前,在众多产生毫米波和亚毫米波信号的方法中,利用双频激光信号外差拍频是一种获取低噪声、高频率电信号的有效方案。在外差拍频过程中,输出电信号的频率取决于双频激光信号的频差;而光电转换效率则依赖于双频激光信号的功率乘积。当输出双频激光总功率一定时,功率均衡度越高则拍频效率也越高。迄今为止,许多双频激光器的研究围绕提高输出频差和提升功率均衡度这两方面展开。在研究前期,曾有研究小组利用单晶体双频激光器获得了频差为80GHz 的双频激光信号,但在进一步提高频差的道路上遭遇了困境。At present, among many methods for generating millimeter-wave and sub-millimeter-wave signals, using the heterodyne beat frequency of dual-frequency laser signals is an effective solution to obtain low-noise, high-frequency electrical signals. In the heterodyne beat process, the frequency of the output electrical signal depends on the frequency difference of the dual-frequency laser signal; and the photoelectric conversion efficiency depends on the power product of the dual-frequency laser signal. When the total power of the output dual-frequency laser is constant, the higher the power balance, the higher the beat frequency efficiency. So far, many researches on dual-frequency lasers have focused on improving the output frequency difference and improving the power balance. In the early stage of the research, a research group used a single-crystal dual-frequency laser to obtain a dual-frequency laser signal with a frequency difference of 80 GHz, but encountered difficulties on the road to further increase the frequency difference.

现有的单晶体双频激光器输出的双频激光信号频差一般小于100 GHz,不能直接拍频获得100GHz以上的高频毫米波信号。随着研究的深入,利用激光晶体间的发射谱差异,可以将不同激光晶体进行有机组合,将组合晶体作为激光增益介质可获得频差更高的双频激光输出。The frequency difference of the dual-frequency laser signal output by the existing single-crystal dual-frequency laser is generally less than 100 GHz, and the high-frequency millimeter-wave signal above 100 GHz cannot be obtained directly by beat frequency. With the deepening of research, different laser crystals can be organically combined by using the emission spectrum difference between laser crystals, and the combined crystal can be used as a laser gain medium to obtain dual-frequency laser output with higher frequency difference.

发明内容SUMMARY OF THE INVENTION

本发明的目的在于提供一种输出高频差激光信号的双频激光器,同时能够均衡调谐双频激光的功率。The purpose of the present invention is to provide a dual-frequency laser that outputs a high-frequency difference laser signal, and at the same time, the power of the dual-frequency laser can be balanced and tuned.

针对上述目的,本发明公开了一种基于Nd:YVO4/Nd:GdVO4组合晶体的双频激光器,包括Nd:YVO4/Nd:GdVO4组合晶体、热沉温控模块、泵浦模块、激光谐振腔及输出模块;泵浦模块发射泵浦光, Nd:YVO4/Nd:GdVO4组合晶体接收泵浦光并经激光谐振腔后受激放大形成双频激光,输出模块接收并输出经激光谐振腔调整的双频激光; Nd:YVO4/Nd:GdVO4组合晶体安置于热沉温控模块,热沉温控模块用于控制Nd:YVO4/Nd:GdVO4组合晶体的温度,以实现对双频激光的功率均衡度调节。其中,Nd:YVO4/Nd:GdVO4组合晶体即掺钕钒酸钇/掺钕钒酸钆组合晶体。In view of the above purpose, the present invention discloses a dual-frequency laser based on Nd:YVO 4 /Nd:GdVO 4 combination crystal, including Nd:YVO 4 /Nd:GdVO 4 combination crystal, heat sink temperature control module, pump module, Laser resonator and output module; the pump module emits pump light, the Nd:YVO 4 /Nd: GdVO 4 combination crystal receives the pump light and is stimulated and amplified by the laser resonator to form a dual-frequency laser, and the output module receives and outputs the pump light. The dual-frequency laser adjusted by the laser resonator; the Nd:YVO 4 /Nd:GdVO 4 combination crystal is placed in the heat sink temperature control module, and the heat sink temperature control module is used to control the temperature of the Nd: YVO 4 /Nd: GdVO 4 combination crystal, In order to realize the adjustment of the power balance of the dual-frequency laser. Among them, the Nd:YVO 4 /Nd:GdVO 4 composite crystal is the neodymium-doped yttrium vanadate/neodymium-doped gadolinium vanadate composite crystal.

进一步的,Nd:YVO4/Nd:GdVO4组合晶体靠近泵浦模块一端的厚度低于Nd:YVO4/Nd:GdVO4组合晶体远离泵浦模块一端的厚度。Further, the thickness of the Nd:YVO 4 /Nd:GdVO 4 composite crystal near the pump module is lower than the thickness of the Nd:YVO 4 /Nd:GdVO 4 composite crystal at the end away from the pump module.

进一步的,Nd:YVO4/Nd:GdVO4组合晶体包含Nd:YVO4激光晶体、 Nd:GdVO4激光晶体,Nd:YVO4/Nd:GdVO4组合晶体是通过将Nd:YVO4(掺钕钒酸钇)激光晶体与Nd:GdVO4(掺钕钒酸钆)激光晶体进行晶体键合获得;Nd:YVO4/Nd:GdVO4组合晶体的Nd:YVO4激光晶体一侧安置于靠近泵浦模块的一侧。Nd:YVO4/Nd:GdVO4组合晶体是激光谐振腔内的增益介质,用于实现双频激光信号的受激辐射放大。由于 Nd:YVO4/Nd:GdVO4组合晶体的受激辐射波长分别处于Nd:YVO4晶体和 Nd:GdVO4晶体发射谱范围之内(如图1所示),因此在20℃时,Nd:YVO4晶体的受激辐射波长与Nd:GdVO4晶体的受激辐射波长相差超过1.2 nm,其理论频差大于300GHz;另一方面,当Nd:YVO4/Nd:GdVO4组合晶体的温度发生变化时,不同晶体发射谱峰值的存在此消彼长,这会使输出双频激光信号的功率均衡度呈现出相应的变化。Further, the Nd: YVO4 /Nd: GdVO4 composite crystal includes Nd: YVO4 laser crystal, Nd: GdVO4 laser crystal, and the Nd:YVO4/Nd: GdVO4 composite crystal is made of Nd:YVO4 (neodymium - doped ) Yttrium vanadate) laser crystal and Nd:GdVO 4 (neodymium-doped gadolinium vanadate) laser crystal are obtained by crystal bonding; the Nd: YVO 4 laser crystal side of the Nd: YVO 4 /Nd: GdVO 4 composite crystal is placed close to the pump side of the Pu module. The Nd:YVO 4 /Nd:GdVO 4 composite crystal is the gain medium in the laser resonator, which is used to realize the stimulated radiation amplification of the dual-frequency laser signal. Since the stimulated emission wavelengths of the Nd:YVO 4 /Nd:GdVO 4 composite crystals are within the emission spectrum of Nd:YVO 4 crystals and Nd:GdVO 4 crystals, respectively (as shown in Figure 1), at 20 °C, the Nd: : The difference between the stimulated emission wavelength of YVO 4 crystal and that of Nd: GdVO 4 crystal is more than 1.2 nm, and the theoretical frequency difference is greater than 300 GHz; on the other hand, when the temperature of the Nd: YVO 4 /Nd: GdVO 4 combined crystal When the change occurs, the existence of the peaks of the emission spectrum of different crystals will change, which will make the power balance of the output dual-frequency laser signal change accordingly.

进一步的,热沉温控模块包括夹持器、水冷底座、半导体制冷件、温控探头、前端控制器及PC控制端,夹持器夹持组合晶体;半导体制冷件安置于夹持器的底部;水冷底座安置于半导体制冷件的底部;温控探头安置于夹持器;前端控制器与温控探头电连接;PC控制端与前端控制器电连接。Further, the heat sink temperature control module includes a holder, a water-cooled base, a semiconductor refrigeration element, a temperature control probe, a front-end controller and a PC control terminal, and the holder holds the combined crystal; the semiconductor refrigeration element is arranged at the bottom of the holder. The water cooling base is arranged on the bottom of the semiconductor refrigeration element; the temperature control probe is arranged on the holder; the front-end controller is electrically connected with the temperature-control probe; the PC control end is electrically connected with the front-end controller.

进一步的,前端控制器与温控探头通过导线电连接,导线为双芯铜质导线。Further, the front-end controller and the temperature control probe are electrically connected through wires, and the wires are double-core copper wires.

进一步的,泵浦模块包括泵浦源、光纤及输入耦合镜,泵浦源与光纤连通,光纤与输入耦合镜连通。其中,泵浦源用于发射泵浦光,光纤与输入耦合镜用于传输与汇聚泵浦光,以提高泵浦光的利用率。Further, the pumping module includes a pumping source, an optical fiber and an input coupling mirror, the pumping source is communicated with the optical fiber, and the optical fiber is communicated with the input coupling mirror. Among them, the pump source is used to transmit the pump light, and the optical fiber and the input coupling mirror are used to transmit and condense the pump light, so as to improve the utilization rate of the pump light.

进一步的,激光谐振腔包括前端镀膜、反射镜,前端镀膜涂覆于组合晶体靠近泵浦模块一侧,反射镜与前端镀膜相对平行安置以便于为激光放大提供正反馈。Further, the laser resonator includes a front-end coating and a mirror, the front-end coating is coated on the side of the combined crystal near the pump module, and the mirror and the front-end coating are relatively parallel to provide positive feedback for laser amplification.

进一步的,输出模块包括输出耦合镜、尾纤,输出耦合镜与反射镜相对平行安置,尾纤与输出耦合镜连接。其中,输出耦合镜用于提高双频激光的输出耦合效率,提高输出功率。Further, the output module includes an output coupling mirror and a pigtail, the output coupling mirror and the reflecting mirror are arranged in parallel with each other, and the pigtail is connected to the output coupling mirror. Among them, the output coupling mirror is used to improve the output coupling efficiency of the dual-frequency laser and increase the output power.

进一步的,前端控制器的温度调控范围为-10℃至100℃。Further, the temperature control range of the front-end controller is -10°C to 100°C.

进一步的,输出模块的输出频差不低于300GHz。Further, the output frequency difference of the output module is not lower than 300GHz.

本发明的有益效果在于:The beneficial effects of the present invention are:

本发明采用Nd:YVO4/Nd:GdVO4组合晶体作为增益介质,能够在接收泵浦光辐射时产生频差大于300GHz的双频激光光束。另外,还可通过热沉温控模块实时调整组合晶体的温度,从而实现对双频激光功率均衡度的调节。本发明的一种基于Nd:YVO4/Nd:GdVO4组合晶体的双频激光器所输出的双频激光的输出频差不低于300GHz,同时能够通过调节输出双频激光的功率均衡度来提高外差拍频效率,具有较好的适用性。The invention adopts the Nd:YVO 4 /Nd: GdVO 4 composite crystal as the gain medium, and can generate a dual-frequency laser beam with a frequency difference greater than 300 GHz when receiving the pump light radiation. In addition, the temperature of the combined crystal can be adjusted in real time through the heat sink temperature control module, so as to realize the adjustment of the power balance of the dual-frequency laser. The output frequency difference of the dual-frequency laser output by a dual-frequency laser based on the Nd:YVO 4 /Nd:GdVO 4 combination crystal of the present invention is not less than 300 GHz, and at the same time, the power balance of the output dual-frequency laser can be adjusted to improve the Heterodyne beat frequency efficiency, has better applicability.

附图说明Description of drawings

图1为Nd:YVO4/Nd:GdVO4组合晶体内Nd:YVO4晶体发射谱(a)及 Nd:GdVO4晶体发射谱(b);Figure 1 shows the emission spectrum of Nd:YVO 4 crystal (a) and the emission spectrum of Nd:GdVO 4 crystal (b) in the Nd:YVO 4 /Nd:GdVO 4 composite crystal;

图2为Nd:YVO4/Nd:GdVO4组合晶体的设计结构图;Fig. 2 is the design structure diagram of Nd:YVO 4 /Nd:GdVO 4 composite crystal;

图3为实施例1中的一种基于Nd:YVO4/Nd:GdVO4组合晶体的双频激光器的组成结构图;Fig. 3 is the composition structure diagram of a kind of dual-frequency laser based on Nd:YVO4/Nd:GdVO4 combination crystal in embodiment 1 ;

图4为实施例1中的一种基于Nd:YVO4/Nd:GdVO4组合晶体的双频激光器的系统输出功率温控调谐图。FIG. 4 is a system output power temperature control tuning diagram of a dual-frequency laser based on Nd:YVO 4 /Nd: GdVO 4 composite crystal in Example 1. FIG.

具体实施方式Detailed ways

以下是本发明的具体实施例并结合附图,对本发明的技术方案作进一步的描述,但本发明并不限于这些实施例。The following are specific embodiments of the present invention and the accompanying drawings to further describe the technical solutions of the present invention, but the present invention is not limited to these embodiments.

实施例1Example 1

本实施例的目的在于提供一种能够输出高频差的双频激光器,同时能够及时对所输出的双频激光进行功率均衡调谐。为实现该目的,参照图3,本实施例公开了一种基于Nd:YVO4/Nd:GdVO4组合晶体的双频激光器,包括Nd:YVO4/Nd:GdVO4组合晶体4、热沉温控模块、泵浦模块、激光谐振腔及输出模块;泵浦模块发射泵浦光, Nd:YVO4/Nd:GdVO4组合晶体4接收泵浦光并经激光谐振腔后受激放大形成双频激光,输出模块接收并输出经激光谐振腔调整的双频激光; Nd:YVO4/Nd:GdVO4组合晶体4安置于热沉温控模块,所述热沉温控模块用于控制Nd:YVO4/Nd:GdVO4组合晶体4的温度。The purpose of this embodiment is to provide a dual-frequency laser capable of outputting a high-frequency difference, and at the same time, capable of performing power equalization tuning on the output dual-frequency laser in time. In order to achieve this purpose, referring to FIG. 3 , this embodiment discloses a dual-frequency laser based on an Nd:YVO 4 /Nd:GdVO 4 combination crystal, including a Nd:YVO 4 /Nd:GdVO 4 combination crystal 4, a heat sink temperature control module, pump module, laser resonator and output module; the pump module emits pump light, and the Nd:YVO 4 /Nd: GdVO 4 combination crystal 4 receives the pump light and is stimulated and amplified by the laser resonator to form a dual frequency The laser, the output module receives and outputs the dual-frequency laser adjusted by the laser resonator; the Nd:YVO 4 /Nd:GdVO 4 combined crystal 4 is placed in the heat sink temperature control module, which is used to control the Nd:YVO 4 /Nd:GdVO 4 combination crystal 4 temperature.

Nd:YVO4/Nd:GdVO4组合晶体4靠近泵浦模块一端的厚度低于 Nd:YVO4/Nd:GdVO4组合晶体远离泵浦模块一端的厚度。 Nd:YVO4/Nd:GdVO4组合晶体由Nd:YVO4晶体17和Nd:GdVO4晶体18经晶体键合技术组合而成,Nd:YVO4/Nd:GdVO4组合晶体的Nd:YVO4激光晶体一侧安置于靠近泵浦模块的一侧。其轴向横截面尺寸为3mm×3mm,均为a轴切割,各个端面镀膜,光轴垂直放置,如图2所示。The thickness of the Nd:YVO 4 /Nd:GdVO 4 composite crystal 4 at one end close to the pump module is lower than the thickness at the end away from the pump module of the Nd:YVO 4 /Nd:GdVO 4 composite crystal. The Nd:YVO 4 /Nd:GdVO 4 composite crystal is composed of Nd: YVO 4 crystal 17 and Nd: GdVO 4 crystal 18 through crystal bonding technology. The Nd: YVO 4 /Nd: GdVO 4 composite crystal is Nd: YVO 4 The side of the laser crystal is placed close to the side of the pump module. Its axial cross-sectional size is 3mm × 3mm, all of which are cut by a-axis, each end face is coated, and the optical axis is placed vertically, as shown in Figure 2.

其中,Nd:YVO4/Nd:GdVO4组合晶体是激光谐振腔内的增益介质,用于实现双频激光的受激辐射放大。由于Nd:YVO4/Nd:GdVO4组合晶体的受激辐射波长分别处于Nd:YVO4晶体和Nd:GdVO4晶体发射谱范围之内(如图1所示),因此在20℃时,Nd:YVO4晶体的受激辐射波长与Nd:GdVO4晶体的受激辐射波长相差超过1.2nm,其理论频差大于300 GHz;另一方面,当Nd:YVO4/Nd:GdVO4组合晶体的温度发生变化时,不同晶体发射谱峰值的存在此消彼长现象,这会使输出双频激光信号的功率均衡度呈现出相应的变化。Among them, the Nd:YVO 4 /Nd:GdVO 4 composite crystal is the gain medium in the laser resonator, which is used to realize the stimulated radiation amplification of the dual-frequency laser. Since the stimulated emission wavelengths of the Nd:YVO 4 /Nd:GdVO 4 composite crystals are within the emission spectrum of Nd:YVO 4 crystals and Nd:GdVO 4 crystals, respectively (as shown in Figure 1), at 20 °C, the Nd: : The difference between the stimulated emission wavelength of YVO 4 crystal and that of Nd: GdVO 4 crystal is more than 1.2 nm, and the theoretical frequency difference is greater than 300 GHz ; When the temperature changes, the peaks of the emission spectrum of different crystals will change and grow, which will cause the power balance of the output dual-frequency laser signal to change accordingly.

热沉温控模块包括夹持器7、水冷底座9、半导体制冷件8、温控探头11、前端控制器10及PC控制端12,夹持器7夹持组合晶体4;半导体制冷件8安置于夹持器7的底部;水冷底座9安置于半导体制冷件8的底部;温控探头11安置于夹持器7;前端控制器10与温控探头11电连接;PC控制端12与前端控制器10电连接。其中,水冷底座9的作用在于实现热交换,温控探头11用于探测组合晶体的温度,前端控制器10的作用在于自动调节半导体制冷件8供电电流的方向及大小,PC控制端12的作用于在于设定温控温度以及查看温控探头所探测的组合晶体的实时温度。The heat sink temperature control module includes a holder 7, a water cooling base 9, a semiconductor refrigeration element 8, a temperature control probe 11, a front-end controller 10 and a PC control terminal 12. The holder 7 clamps the combined crystal 4; the semiconductor refrigeration element 8 is placed at the bottom of the holder 7; the water-cooled base 9 is arranged at the bottom of the semiconductor refrigeration element 8; the temperature control probe 11 is arranged on the holder 7; the front-end controller 10 is electrically connected with the temperature-control probe 11; The device 10 is electrically connected. Among them, the function of the water-cooled base 9 is to realize heat exchange, the temperature control probe 11 is used to detect the temperature of the combined crystal, the function of the front-end controller 10 is to automatically adjust the direction and magnitude of the power supply current of the semiconductor refrigeration element 8, and the function of the PC control terminal 12 The purpose is to set the temperature control temperature and view the real-time temperature of the combined crystal detected by the temperature control probe.

夹持器7选用铝合金材料制成的金属夹持器,其构是由上下两块螺丝连接的三棱柱拼合组成,其拼合中心处设置一3.5mm×3.5mm方形槽,用于放置铟箔包裹的Nd:YVO4/Nd:GdVO4组合晶体。The holder 7 is a metal holder made of aluminum alloy material. Its structure is composed of three prisms connected by upper and lower screws. A 3.5mm×3.5mm square slot is set at the center of the splicing for placing indium foil. Encapsulated Nd:YVO 4 /Nd:GdVO 4 composite crystal.

半导体制冷件8选用型号为TEC1-12708的半导体制冷片,其最大制冷功率为68.9W。The semiconductor refrigerating element 8 is a TEC1-12708 semiconductor refrigerating chip, and its maximum cooling power is 68.9W.

水冷底座9为空心的铝合金盒体,其设置一出水口、一进水口,其作用在于固定夹持器7、半导体制冷件8,以及完成热交换过程中提高温控的稳定性。The water-cooling base 9 is a hollow aluminum alloy box body, which is provided with a water outlet and a water inlet, and its functions are to fix the holder 7 and the semiconductor refrigeration element 8, and to improve the stability of temperature control during the heat exchange process.

前端控制器10为型号TCB-NA半导体制冷片温度控制板,其是基于PID控制算法进而以实现-10℃至100℃的温度调控,控温精度可达0.1℃。The front-end controller 10 is a temperature control board of the type TCB-NA semiconductor refrigeration chip, which is based on a PID control algorithm to achieve temperature regulation from -10°C to 100°C, and the temperature control accuracy can reach 0.1°C.

温控探头11是阻值为10KΩ的热敏电阻(NTC),其B值为3950 (B值是一个描述热敏电阻材料物理特性的参数,即热灵敏度指标, B值越大,热敏电阻的灵敏度越高)。The temperature control probe 11 is a thermistor (NTC) with a resistance value of 10KΩ, and its B value is 3950 (the B value is a parameter describing the physical properties of the thermistor material, that is, the thermal sensitivity index. higher sensitivity).

PC控制端12为安装有串口调试软件的电脑。PC控制端12与前端控制器10通过数据线16进行电连接,其数据线16为USB转RS-232 串口线。The PC control terminal 12 is a computer installed with serial port debugging software. The PC control terminal 12 and the front-end controller 10 are electrically connected through a data line 16, and the data line 16 is a USB-to-RS-232 serial port line.

前端控制器10与温控探头11通过导线15电连接,导线15为双芯铜质导线。The front-end controller 10 and the temperature control probe 11 are electrically connected through a wire 15, and the wire 15 is a double-core copper wire.

泵浦模块包括泵浦源1、光纤2及输入耦合镜3,泵浦源1与光纤2连通,光纤2与输入耦合镜3连通。其中,泵浦源1用于发射泵浦光,光纤2与输入耦合镜3用于传输与汇聚泵浦光,以提高泵浦光的利用率。泵浦源1为输出中心波长为808nm的半导体激光器且其输出功率可调节;光纤2为多模光纤,其芯径为100μm;输入耦合镜3 为自聚焦透镜。The pumping module includes a pumping source 1 , an optical fiber 2 and an input coupling mirror 3 . The pumping source 1 communicates with the optical fiber 2 , and the optical fiber 2 communicates with the input coupling mirror 3 . Among them, the pump source 1 is used to transmit the pump light, and the optical fiber 2 and the input coupling mirror 3 are used to transmit and condense the pump light, so as to improve the utilization rate of the pump light. The pump source 1 is a semiconductor laser with an output center wavelength of 808 nm and its output power can be adjusted; the fiber 2 is a multimode fiber with a core diameter of 100 μm; the input coupling mirror 3 is a self-focusing lens.

激光谐振腔包括前端镀膜5、反射镜6,前端镀膜5涂覆于组合晶体,反射镜6与前端镀膜5相对平行安置以便于为激光放大提供正反馈。其中,前端镀膜5包括全反射膜19及增透膜20;反射镜6为平面反射镜,且该平面反射镜靠近组合晶体一侧的镜面镀有部分高反射膜(R=90%@1064nm)和高反射膜(HR@808nm)。The laser resonator includes a front-end coating 5 and a mirror 6, the front-end coating 5 is coated on the combined crystal, and the mirror 6 is arranged parallel to the front-end coating 5 to provide positive feedback for laser amplification. Among them, the front-end coating 5 includes a total reflection film 19 and an anti-reflection film 20; the mirror 6 is a flat mirror, and the mirror surface of the flat mirror near the combined crystal is coated with a partial high-reflective film (R=90%@1064nm) and high reflection film (HR@808nm).

参照图2,Nd:YVO4/Nd:GdVO4组合晶体4的一端为Nd:YVO4激光晶体17,另一端为厚度较大的Nd:GdVO4激光晶体18,其组合晶体的两端面都进行镀膜。其中,Nd:YVO4激光晶体靠近耦合输入镜的一侧镀有全反射膜(HR@1064nm)19和增透膜(AR@808nm)20,Nd:YVO4激光晶体与Nd:GdVO4激光晶体中间结合的端面镀有增透膜(AR@808 nm&1064nm)21,Nd:GdVO4激光晶体靠近反射镜的一侧端面镀有增透膜(AR@1064nm)22。Referring to FIG. 2 , one end of the Nd:YVO4/Nd:GdVO4 composite crystal 4 is an Nd:YVO4 laser crystal 17 , and the other end is a thicker Nd:GdVO4 laser crystal 18 , and both ends of the composite crystal are Coating. Among them, the Nd:YVO 4 laser crystal is coated with a total reflection film (HR@1064nm)19 and an anti-reflection film (AR@808nm)20 on the side close to the coupling input mirror, and the Nd:YVO 4 laser crystal and the Nd:GdVO 4 laser crystal are The end face of the intermediate joint is coated with an anti-reflection film (AR@808 nm&1064nm)21, and the end face of the Nd:GdVO 4 laser crystal near the mirror is coated with an anti-reflection film (AR@1064nm)22.

输出模块包括输出耦合镜13、尾纤14,输出耦合镜13与反射镜 6相对平行安置,尾纤14与输出耦合镜13连接。其中,输出耦合镜 13用于提高双频激光的耦合效率,提高输出功率。尾纤14为多模光纤,其芯径为100μm;输出耦合镜13为非球面透镜,其耦合效率可高达85%。The output module includes an output coupling mirror 13 and a pigtail 14. The output coupling mirror 13 is arranged in parallel with the reflecting mirror 6, and the pigtail 14 is connected to the output coupling mirror 13. Among them, the output coupling mirror 13 is used to improve the coupling efficiency of the dual-frequency laser and increase the output power. The pigtail 14 is a multimode fiber with a core diameter of 100 μm; the output coupling mirror 13 is an aspherical lens, and its coupling efficiency can be as high as 85%.

前端控制器10的温度调控范围为-10℃至100℃。The temperature control range of the front-end controller 10 is -10°C to 100°C.

输出模块的输出频差不低于300GHz。The output frequency difference of the output module is not less than 300GHz.

除此之外,本实施例所公开的双频激光器还需要底座、透镜支架、螺丝等辅助器件来稳定整个双频激光器装置以及保持光路中心高度的一致,然后通过调节泵浦源的位置及反射镜位置、角度等工作参数,使得双频激光信号顺利输出。最终本实施例中的双频激光器可实现中心波长1060nm左右,频差不低于300GHz且功率均衡度可调谐的双频激光的输出,且该双频激光器在5-40℃时的温控特性如图4所示。In addition, the dual-frequency laser disclosed in this embodiment also needs auxiliary components such as a base, a lens holder, and a screw to stabilize the entire dual-frequency laser device and keep the center height of the optical path consistent, and then adjust the position and reflection of the pump source by adjusting the position and reflection of the pump source. The working parameters such as mirror position and angle make the dual-frequency laser signal output smoothly. Finally, the dual-frequency laser in this embodiment can realize the output of a dual-frequency laser with a center wavelength of about 1060 nm, a frequency difference of not less than 300 GHz, and a tunable power balance, and the temperature control characteristics of the dual-frequency laser at 5-40 °C As shown in Figure 4.

本实施例中所提供的一种基于Nd:YVO4/Nd:GdVO4组合晶体的双频激光器,其工作原理在于:在808nm激光泵浦源的作用下经切割的 Nd:YVO4晶体和Nd:GdVO4晶体由于发射截面谱在频率上的差异,其输出波长也会表现出明显的差别,即可以实现双频激光的输出。其将a 轴切割的Nd:YVO4晶体和Nd:GdVO4晶体光轴相互垂直组合成 Nd:YVO4/Nd:GdVO4组合晶体作为激光器的增益介质,放置于泵浦光的中心线,并调节泵浦模块选取合适的泵浦功率,再通过热沉温控模块调节双频激光的功率均衡度,然后利用激光谐振腔和输出模块控制双频激光的光束质量,最终获得了功率均衡的大频差双频激光输出。其还可以通过PC控制端预设温控的温度来实时调整晶体的温度,实现对双频激光的功率均衡调谐的目的。A dual-frequency laser based on Nd:YVO 4 /Nd: GdVO 4 combined crystal provided in this embodiment, its working principle is: under the action of the 808nm laser pump source, the Nd: YVO 4 crystal and Nd : Due to the difference in frequency of the emission cross-section spectrum of the GdVO 4 crystal, the output wavelength will also show a significant difference, that is, the output of dual-frequency laser can be realized. It combines the a-axis cut Nd:YVO 4 crystal and Nd:GdVO 4 crystal with the optical axes perpendicular to each other to form a Nd:YVO 4 /Nd:GdVO 4 combination crystal as the gain medium of the laser, which is placed on the center line of the pump light, and Adjust the pump module to select the appropriate pump power, then adjust the power balance of the dual-frequency laser through the heat sink temperature control module, and then use the laser resonator and the output module to control the beam quality of the dual-frequency laser, and finally obtain a large power balance. Frequency difference dual frequency laser output. It can also adjust the temperature of the crystal in real time through the preset temperature of the PC control terminal, so as to achieve the purpose of power balance tuning of the dual-frequency laser.

本实施实例中所提供的双频激光器,其是采用Nd:YVO4/Nd:GdVO4组合晶体作为增益介质,能够在接收泵浦光辐射时产生大频差的双频激光光束,并经过激光谐振腔及输出模块调整双频激光的光束质量。另外,还可通过热沉温控模块实时调整组合晶体的温度,从而实现对双频激光功率均衡度的调节。本发明的一种基于Nd:YVO4/Nd:GdVO4组合晶体的双频激光器所输出的双频激光的输出频差不低于300GHz, 同时能够通过调节输出双频激光的功率均衡度来提高外差拍频效率,具有较好的适用性。The dual-frequency laser provided in this example uses a Nd:YVO 4 /Nd:GdVO 4 combination crystal as the gain medium, which can generate a dual-frequency laser beam with a large frequency difference when receiving the pump light radiation, and pass through the laser beam. The resonator and the output module adjust the beam quality of the dual-frequency laser. In addition, the temperature of the combined crystal can be adjusted in real time through the heat sink temperature control module, so as to realize the adjustment of the power balance of the dual-frequency laser. The output frequency difference of the dual-frequency laser output by a dual-frequency laser based on the Nd:YVO 4 /Nd:GdVO 4 combination crystal of the present invention is not less than 300 GHz, and at the same time, it can be improved by adjusting the power balance of the output dual-frequency laser. Heterodyne beat frequency efficiency, has better applicability.

本文中所描述的具体实施例仅仅是对本发明精神作举例说明。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代,但并不会偏离本发明的精神或者超越所附权利要求书所定义的范围。The specific embodiments described herein are merely illustrative of the spirit of the invention. Those skilled in the art to which the present invention pertains can make various modifications or additions to the described specific embodiments or substitute in similar manners, but will not deviate from the spirit of the present invention or go beyond the definitions of the appended claims range.

Claims (7)

1. A double-frequency laser based on Nd, YVO4/Nd, GdVO4 composite crystal is characterized by comprising Nd, YVO4/Nd, GdVO4 composite crystal, a heat sink temperature control module, a pumping module, a laser resonant cavity and an output module; the pump module emits pump light, the combined crystal of YVO4/Nd GdVO4 receives the pump light, the pump light is stimulated and amplified to form double-frequency laser after passing through the laser resonant cavity, and the output module receives and outputs the double-frequency laser adjusted by the laser resonant cavity; the Nd is YVO4/Nd is GdVO4 composite crystal is arranged on the heat sink temperature control module, and the heat sink temperature control module is used for controlling the temperature of the Nd is YVO4/Nd is GdVO4 composite crystal;
the heat sink temperature control module comprises a clamp holder, a water-cooling base, a semiconductor refrigerating piece, a temperature control probe, a front end controller and a PC control end, wherein the clamp holder clamps the combined crystal; the semiconductor refrigerating piece is arranged at the bottom of the holder; the water-cooling base is arranged at the bottom of the semiconductor refrigerating piece; the temperature control probe is arranged on the clamper; the front-end controller is electrically connected with the temperature control probe; the PC control end is electrically connected with the front-end controller; the water-cooling base is used for realizing heat exchange, the temperature control probe is used for detecting the temperature of the combined crystal, the front-end controller is used for automatically adjusting the direction and the magnitude of the power supply current of the semiconductor refrigerating element, and the PC control end is used for setting the temperature control temperature and checking the real-time temperature of the combined crystal detected by the temperature control probe;
the output module comprises an output coupling mirror and a tail fiber, the output coupling mirror and the reflecting mirror are arranged in parallel relatively, and the tail fiber is connected with the output coupling mirror;
the thickness of the Nd: YVO4/Nd: GdVO4 combined crystal close to one end of the pumping module is lower than that of the Nd: YVO4/Nd: GdVO4 combined crystal far away from one end of the pumping module.
2. The dual-frequency laser of claim 1, which is based on a Nd: YVO4/Nd: GdVO4 composite crystal, wherein the Nd: YVO4/Nd: GdVO4 composite crystal comprises Nd: YVO4 laser crystal, Nd: GdVO4 laser crystal, and the Nd: YVO4/Nd: GdVO4 composite crystal is obtained by crystal-bonding Nd: YVO4 laser crystal and Nd: GdVO4 laser crystal; the Nd: YVO4 laser crystal side of the Nd: YVO4/Nd: GdVO4 combined crystal is arranged at the side close to the pumping module.
3. The Nd: YVO4/Nd: GdVO4 composite crystal-based dual-frequency laser of claim 1, wherein the front-end controller is electrically connected with the temperature control probe through a lead wire, and the lead wire is a dual-core copper lead wire.
4. The Nd: YVO4/Nd: GdVO4 composite crystal-based two-frequency laser of claim 1, wherein the pump module comprises a pump source, an optical fiber and an input coupling mirror, the pump source is communicated with the optical fiber, and the optical fiber is communicated with the input coupling mirror.
5. The dual-frequency laser of claim 4, based on a Nd: YVO4/Nd: GdVO4 composite crystal, wherein the laser resonant cavity comprises a front-end coating and a reflector, the front-end coating is coated on one side of the composite crystal close to the pumping module, and the reflector and the front-end coating are arranged in parallel relatively.
6. The dual-frequency laser based on Nd: YVO4/Nd: GdVO4 composite crystal as claimed in claim 1, wherein the temperature of the front-end controller is controlled in a range of-10 ℃ to 100 ℃.
7. The two-frequency laser based on Nd: YVO4/Nd: GdVO4 composite crystal as claimed in any one of claims 1-6, wherein the output frequency difference of the output module is not lower than 300 GHz.
CN201810122328.9A 2018-02-07 2018-02-07 YVO based on Nd4/Nd:GdVO4Double-frequency laser of combined crystal Active CN108493756B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810122328.9A CN108493756B (en) 2018-02-07 2018-02-07 YVO based on Nd4/Nd:GdVO4Double-frequency laser of combined crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810122328.9A CN108493756B (en) 2018-02-07 2018-02-07 YVO based on Nd4/Nd:GdVO4Double-frequency laser of combined crystal

Publications (2)

Publication Number Publication Date
CN108493756A CN108493756A (en) 2018-09-04
CN108493756B true CN108493756B (en) 2020-06-12

Family

ID=63344651

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810122328.9A Active CN108493756B (en) 2018-02-07 2018-02-07 YVO based on Nd4/Nd:GdVO4Double-frequency laser of combined crystal

Country Status (1)

Country Link
CN (1) CN108493756B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114204383B (en) * 2021-11-24 2024-01-16 北京大学 Quantum thermometer based on active lasing and implementation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101071932A (en) * 2007-05-22 2007-11-14 南昌航空大学 Semiconductor laser precision tune-up and tempeature control device
CN101572384A (en) * 2009-03-13 2009-11-04 中国科学院福建物质结构研究所 Combined continuous full-solid state Raman laser
US7742509B2 (en) * 2008-09-25 2010-06-22 Photop Technologies Single-longitudinal mode laser with orthogonal-polarization traveling-wave mode
CN102891422A (en) * 2011-12-22 2013-01-23 清华大学 Nonlinear crystal temperature control device
CN105071217A (en) * 2015-08-27 2015-11-18 山东大学 Self-frequency-doubling all-solid-state yellow-light laser

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104682196A (en) * 2013-11-29 2015-06-03 福州高意通讯有限公司 Direct semiconductor laser

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101071932A (en) * 2007-05-22 2007-11-14 南昌航空大学 Semiconductor laser precision tune-up and tempeature control device
US7742509B2 (en) * 2008-09-25 2010-06-22 Photop Technologies Single-longitudinal mode laser with orthogonal-polarization traveling-wave mode
CN101572384A (en) * 2009-03-13 2009-11-04 中国科学院福建物质结构研究所 Combined continuous full-solid state Raman laser
CN102891422A (en) * 2011-12-22 2013-01-23 清华大学 Nonlinear crystal temperature control device
CN105071217A (en) * 2015-08-27 2015-11-18 山东大学 Self-frequency-doubling all-solid-state yellow-light laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Efficient dual-wavelength diode-end-pumped laser with a diffusion-bonded Nd:YVO4/Nd:GdVO4 crystal";Y.J.Huang等;《OPTICAL MATERIALS EXPRESS》;20150930;正文第2节、第3节、附图1a、1b *

Also Published As

Publication number Publication date
CN108493756A (en) 2018-09-04

Similar Documents

Publication Publication Date Title
CN103618205B (en) A kind of full-solid-state single longitudinal mode yellow light laser
EP3641081B1 (en) Phonon band edge emission-based all solid state high power slab laser
WO2019028679A1 (en) Frequency-doubling laser and harmonic laser light generating method
CN109586150B (en) Hectowatt-level continuous single-frequency all-solid-state laser realized by single resonant cavity
CN100452577C (en) Mid-infrared solid-state lasers pumped by semiconductor lasers
CN107565352B (en) A kind of laser exporting the tunable Laguerre Gaussian beam of 1064nm
CN113078534B (en) Intracavity cascade pump laser based on composite structure gain medium
CN104283101A (en) All-solid-state single-frequency tunable red laser
CN104953455A (en) Kerr-lens mode-locked solid sheet laser device
CN107482425A (en) A laser pump source with high repetition rate, single longitudinal mode, and narrow pulse width of 2.79um
CN102005694A (en) Single-end pumped intra-cavity frequency doubled ultraviolet solid laser
CN204103239U (en) A kind of all solid state single frequency tunable red laser
CN108493756B (en) YVO based on Nd4/Nd:GdVO4Double-frequency laser of combined crystal
CN102299464A (en) Microchip solid state laser
CN107196181A (en) A kind of C mount encapsulation semiconductor laser pumping Low threshold micro-slice lasers and its control method without coupled system
CN114204394B (en) A dual-wavelength laser with orthogonal polarization and adjustable ratio
CN103779771A (en) High power dual frequency solid-state microchip laser device
CN206116866U (en) High temperature LD pumping quadrature porro prism polarization coupling output cavity
CN102593703A (en) Device for judging optimal thermal balance operation condition of self-frequency conversion crystal
CN213341067U (en) Device for realizing narrow linewidth output based on optical parametric oscillator
CN112234428B (en) Three-wavelength double-end comprehensive pumping Cr-Er YSGG acousto-optic Q-switched laser and absorption rate enhancement method
CN114883896A (en) 2 mu m laser
CN208078376U (en) 3 temperature-compensating 473nm blue light continuous wave lasers
CN110632805B (en) Solid single-laser dual-wavelength pumping optical difference frequency terahertz wave generating device
CN104269731B (en) Sum frequency sodium beacon laser

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20210603

Address after: 310018 room 2725, building 5, Fred Plaza, Baiyang street, Hangzhou Economic and Technological Development Zone, Zhejiang Province

Patentee after: HANGZHOU BOCHANG PHOTOELECTRIC TECHNOLOGY Co.,Ltd.

Address before: 310018 no.1158, No.2 street, Baiyang street, Hangzhou Economic and Technological Development Zone, Hangzhou, Zhejiang Province

Patentee before: HANGZHOU DIANZI University

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20220601

Address after: 518000 Guangdong Shenzhen Nanshan District science and Technology Park North area two long road 8, 305 building (305).

Patentee after: INNO LASER TECHNOLOGY Corp.,Ltd.

Address before: 310018 room 2725, building 5, Fred Plaza, Baiyang street, Hangzhou Economic and Technological Development Zone, Zhejiang Province

Patentee before: HANGZHOU BOCHANG PHOTOELECTRIC TECHNOLOGY CO.,LTD.

TR01 Transfer of patent right