CN104682196A - Direct semiconductor laser - Google Patents
Direct semiconductor laser Download PDFInfo
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- CN104682196A CN104682196A CN201310621035.2A CN201310621035A CN104682196A CN 104682196 A CN104682196 A CN 104682196A CN 201310621035 A CN201310621035 A CN 201310621035A CN 104682196 A CN104682196 A CN 104682196A
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Abstract
The invention relates to the field of laser technology, and discloses a direct semiconductor laser, which comprises an LD (Laser Diode) chip array, an array-coupling optical fiber, a laser beam combination unit and a partial output coupling lens; the array-coupling optical fiber comprises a plurality of parallel optical fibers, the section of the core of each optical fiber is of a rectangular or quasi-rectangular structure, single-mode laser is propagated along the short side direction of the rectangular or quasi-rectangular structure, and multi-mode laser is propagated along the long side direction of the rectangular or quasi-rectangular structure; one end of each optical fiber corresponds to the LD chip array, the other end is an output end, and the output ends are densely arranged into a straight line along the short side direction of the rectangular or quasi-rectangular structure. By adopting the specially made array-coupling optical fiber to couple the laser of the LD chip array, the distances between the laser beams of each laser are greatly shortened, so that small-sized multi-beam parallel laser output is obtained, wavelength beam combination is then carried out for the laser beams of the output ends of the array-coupling optical fiber, and thereby a small-spot, high-power, high-brightness and high-quality laser beam can be obtained; moreover, the direct semiconductor laser is structurally simple, and is easy to put into practice.
Description
Technical field
The present invention relates to laser technology field, particularly relate to a kind of direct semiconductor laser of high-power output.
Background technology
Compared with solid state laser, gas laser and fiber laser, direct semiconductor laser has more advantage, and efficiency is high, and volume is little, and price is low, and reliability is high.But semiconductor laser, shortcoming is that power density is lower and beam quality is poor.
In order to overcome the above problems, the technology generally all adopting beam shaping to close bundle carries out the process of conjunction bundle to multiple LD.Existing conjunction bundle technology, as bundle technology is closed in space, only can improve power and can not improve brightness; Polarization coupling, can improve brightness, but can only close bundle two-way laser; Wavelength coupling, power and brightness can be improved, as TeraDiode company make use of the wavelength light beam synthetic method of Massachusetts Institute of Technology's Lincoln laboratory exploitation, a large amount of independently semiconductor laser is carried out light beam synthesis, launch a branch of high power, high-quality laser beam, make its power reaching traditional chemical or solid state laser and beam quality level, obtain higher electrical efficiency and controlled caloric value.And for example Patent Office of the People's Republic of China's invention disclosed patent application on October 9 " a kind of beam merging apparatus of semiconductor laser tube core " (application number: 201310274302.3) in 2013, utilize the wavelength coupling of fast and slow axis collimating lens, volume Bragg grating, holographic grating and optical beam transformation set of lenses realization to multiple laser, to obtain the high-quality laser beam of high power, high brightness.
Above-mentioned TeraDiode company and Chinese invention patent application " a kind of beam merging apparatus of semiconductor laser tube core " are although all make use of the laser beam that wavelength coupling technology realizes high power, high brightness, but because multiple lasing fluorescence unit lines up array side by side, size is larger, need the optical system of larger caliber, and heavy-caliber optical system must bring larger aberration when carrying out beam shaping and focusing on, affect the size of focal beam spot.
Summary of the invention
For solving the problem, the present invention proposes a kind of direct semiconductor laser, has the high-quality laser beam of the high power of optical fiber output, high brightness, small light spot.
For achieving the above object, technical scheme provided by the invention is: a kind of direct semiconductor laser, comprise the LD chip array, the light beam that arrange according to light path and close Shu Danyuan and part output coupling mirror, also comprise array couples optical fiber, be located at LD chip array and light beam closes between Shu Danyuan; Described array couples optical fiber comprises many optical fiber arranged side by side, and each fiber core cross section is rectangle or class rectangular configuration, and the short side direction along rectangle or class rectangular configuration propagates single-mode laser, can propagate multi-mode laser along its long side direction; Optical fiber one end and LD chip array one_to_one corresponding, the other end is output, and the short side direction close-packed arrays along rectangle or class rectangular configuration is in alignment; The laser of each chip emission of LD chip array enters in optical fiber corresponding to array couples optical fiber respectively, export from one end of array couples close fiber optic arrangement, close after Shu Danyuan conjunction bundle through light beam again, exported by part output coupling mirror and feed back to light beam conjunction Shu Danyuan and carry out wavelength locking.
Further, the each optical fiber of described array couples fiber-optic output is finished to plane along the long side direction of rectangle or class rectangular configuration, the bond length of the spacing between two surface polishings of each optical fiber and the core cross sections of rectangle or class rectangular configuration is the same order of magnitude, and is greater than this bond length.
Further, described light beam conjunction Shu Danyuan comprises collimating cylindrical mirror group and closes bundle grating; The end face of described array couples fiber-optic output is positioned on the focal plane of collimating cylindrical mirror group; The laser exported by array couples optical fiber incides and closes on bundle grating after collimating cylindrical mirror group collimation, is exported after ECDC bundle grating by part output coupling mirror, part output coupling mirror and close bundle grating and provide and feed back to LD chip array and carry out wavelength locking.
Further, described conjunction bundle grating is transmission-type grating or reflective gratings.
Further, also comprise and be positioned at part output coupling mirror shaping focus lens group below and output optical fibre; The conjunction Shu Jiguang exported by part output coupling mirror is through the shaping of shaping focus lens group and focusing is coupled to output optical fibre, through output optical fibre Output of laser.
Beneficial effect of the present invention is: be coupled by the laser of LD chip array by adopting special array couples optical fiber, the beam separation of each laser is reduced greatly, obtain the Laser output that small-sized multi beam is arranged side by side, and then the laser beam of pair array coupled fiber output carries out wavelength coupling, thus the high power of small light spot, the high-quality laser beam of high brightness can be obtained; And structure is simple, easy.
Accompanying drawing explanation
Fig. 1 is the structural representation of direct semiconductor laser embodiments of the present invention;
Fig. 2 is array couples coupling fiber end fiber cross-sections schematic diagram of the present invention;
Fig. 3 is coupled fiber output end view of the present invention;
Fig. 4 is that direct semiconductor laser beam of the present invention closes each hot spot schematic diagram in bundle process.
Accompanying drawing indicates: 1, LD chip array; 101, luminescence unit; 2, array couples optical fiber; 201, coupled end; 202, output; 203, fibre core; 3, collimating cylindrical mirror group; 4, bundle grating is closed; 5, part output coupling mirror; 6, shaping focus lens group; 7, output optical fibre.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
The laser of LD chip array is coupled by adopting special array couples optical fiber by direct semiconductor laser of the present invention, the beam separation of each laser is reduced greatly, obtain the Laser output that small-sized multi beam is arranged side by side, and then the laser beam of pair array coupled fiber output carries out wavelength coupling, thus the high power of small light spot, the high-quality laser beam of high brightness can be obtained; And structure is simple, easy.Concrete, this direct semiconductor laser comprises the LD chip array 1, the light beam that arrange according to light path and closes Shu Danyuan and part output coupling mirror 5, also comprises array couples optical fiber 2, is located at LD chip array 1 and light beam closes between Shu Danyuan; This array couples optical fiber 2 comprises many optical fiber arranged side by side, and each fiber core 203 cross section is rectangle or class rectangular configuration, and the short side direction along rectangle or class rectangular configuration propagates single-mode laser, can propagate multi-mode laser along its long side direction; Coupling fiber end 201 and LD chip array 1 one_to_one corresponding, the other end is output 202, and the short side direction close-packed arrays along rectangle or class rectangular configuration fibre core 203 is in alignment, and bonds together; The laser that each luminescence unit 101 of LD chip array 1 is launched enters in the optical fiber of array couples optical fiber 2 correspondence respectively, export from the compact arranged output 202 of array couples optical fiber 2, close after Shu Danyuan conjunction bundle through light beam again, exported by part output coupling mirror 5, exported by part output coupling mirror 5 and feed back to light beam conjunction Shu Danyuan and carry out wavelength locking.Array couples optical fiber 2, light beam close Shu Danyuan and part output coupling mirror 5 pairs of laser beams carry out hot spot compression conjunction bundle and wavelength locking, form the semiconductor laser of outer-cavity structure, the Laser output that bundle is closed in a direction compression can be obtained, one of them direction is single mode, and another one orthogonal direction is still multimode.
Concrete, embodiment as shown in Figure 1, preferably, this embodiment adds shaping focus lens group 6 and output optical fibre 7 below at part output coupling mirror 5; The conjunction Shu Jiguang exported by part output coupling mirror 5 is through shaping focus lens group 6 shaping and focusing is coupled to output optical fibre 7, through output optical fibre 7 Output of laser.Wherein, the collimating cylindrical mirror group 3 that light beam conjunction Shu Danyuan comprises laser beam fast and slow axis collimates restraints grating 4 with closing, and the end face of array couples optical fiber 2 output 202 is positioned on the focal plane of collimating cylindrical mirror group 3; The laser exported by array couples optical fiber 2 incides and closes on bundle grating 4 after collimating cylindrical mirror group 3 collimates, exported by part output coupling mirror 5 after ECDC bundle grating 4, part output coupling mirror 5 and close bundle grating 4 and provide and feed back to LD chip array 1 and carry out wavelength locking. the conjunction Shu Yuanli wherein closing bundle grating 4 is, the wavelength of each luminescence unit 101 emergent light of LD chip array 1 is followed successively by λ 1, λ 2 ... λ n, the wavelength difference of each Shu Guang is very little, and monotone increasing or reduction.Because wavelength is different, the angle of diffraction of each Shu Guang is also just different; When each Shu Guang incides conjunction bundle grating 4 with the different incidence angles of rule, after ECDC bundle grating 4 diffraction, each Shu Guang will be combined into light beam near field and far field.Because light path is reversible, the part Guang Jiangyanyuan road reflected through part output coupling mirror 5 returns, and the wavelength of each luminescence unit 101 of ECDC bundle grating 4 difference feedback lock, makes the wavelength of each luminescence unit 101 stable output, to improve the quality of outgoing laser beam.
Array couples optical fiber 2 each fiber core 203 cross section is rectangle or class rectangular configuration as shown in Figures 2 and 3, and the short side direction along rectangle or class rectangular configuration fibre core 203 propagates single-mode laser, can propagate multi-mode laser along its long side direction.As shown in Figure 3, the each optical fiber of its output 202 is finished to plane along the long side direction of rectangle or class rectangular configuration, and this side is polished to thin as far as possible, the bond length size in the spacing between two surface polishings making each optical fiber and fibre core 203 cross section of rectangle or class rectangular configuration is at the same order of magnitude, and be greater than this bond length, with make each fiber-optic output 202 can short side direction close-packed arrays easily along its rectangle or class rectangular configuration in alignment, thus the center distance between each optical fiber is also in the same order of magnitude with the size of this minor face.It is multimode that the array couples optical fiber 2 of this structure can keep LD output transverse mode one dimension to be single mode one dimension.And after the compression of this array couples optical fiber 2, the spacing of each luminescence unit 101 light beam that its output 202 exports reduces greatly, the Laser output that small-sized multi beam is arranged side by side can be obtained, thus reduce the aberration brought when using heavy-caliber optical system to carry out beam shaping, the focusing of conjunction bundle, to obtain the high power of small light spot, the high-quality laser beam of high brightness.
Concrete light path, as shown in figs. 1 and 4, the each luminescence unit 101 of LD chip array 1 exports the signal of light spacing as shown in Fig. 4 hot spot A, the output light of each luminescence unit 101 is coupled in the optical fiber of array couples optical fiber 2 correspondence respectively, the output 202 in alignment through array couples optical fiber 2 close-packed arrays exports, its spot separation reduces greatly, hot spot is also compressed by rectangle or class rectangular configuration fibre core 203, this array couples optical fiber 2 output 202 output facula is as shown in hot spot B in Fig. 4, collimate through the light beam fast and slow axis of collimating cylindrical mirror group 3 to each luminescence unit 101 again, simultaneously because array couples optical fiber 2 output 202 face is positioned on this collimating cylindrical mirror group 3 focal plane, and each close fiber optic is arranged in straight line, thus each fiber end face exports the diverse location that light is positioned at focal plane, to assemble with different angles to incide through output beam each after collimation lens set 3 closes on bundle grating 4, each light beam can be made to close bundle grating 4 different incidence angles with correspondence by the focal length parameter arranging collimation lens set 3 incides on conjunction bundle grating 4, thus after ECDC bundle grating 4, obtain the output of a branch of directional light, reach the object of closing bundle.The directional light that ECDC bundle grating 4 exports is after part output coupling mirror 5, portion's dichroic reflection feeds back to luminescence unit 101 wavelength locking along original optical path, part output coupling mirror and close bundle grating and provide and feed back to LD chip array and carry out wavelength locking, its output facula is as shown in hot spot C in Fig. 4.
Finally, the conjunction Shu Guangzai that part output coupling mirror 5 exports is coupled to an output optical fibre 7 through the post-concentration of shaping focus lens group 6 shaping, the high-quality laser beam of the high power that final acquisition optical fiber exports, high brightness, small light spot.
In the various embodiments described above, close bundle grating 4 and can adopt transmission-type grating, also can adopt reflective gratings.
Although specifically show in conjunction with preferred embodiment and describe the present invention; but those skilled in the art should be understood that; not departing from the spirit and scope of the present invention that appended claims limits; in the form and details to the various changes that the present invention makes, be protection scope of the present invention.
Claims (6)
1. a direct semiconductor laser, comprises the LD chip array, the light beam that arrange according to light path and closes Shu Danyuan and part output coupling mirror, it is characterized in that: also comprise array couples optical fiber, is located at LD chip array and light beam closes between Shu Danyuan; Described array couples optical fiber comprises many optical fiber arranged side by side, and each fiber core cross section is rectangle or class rectangular configuration, and the short side direction along rectangle or class rectangular configuration propagates single-mode laser, can propagate multi-mode laser along its long side direction; Optical fiber one end and LD chip array one_to_one corresponding, the other end is output, and the short side direction close-packed arrays along rectangle or class rectangular configuration is in alignment; The laser of each chip emission of LD chip array enters in optical fiber corresponding to array couples optical fiber respectively, export from one end of array couples close fiber optic arrangement, close after Shu Danyuan conjunction bundle through light beam again, exported by part output coupling mirror and feed back to light beam conjunction Shu Danyuan and carry out wavelength locking.
2. direct semiconductor laser as claimed in claim 1, it is characterized in that: each optical fiber of described array couples fiber-optic output is finished to plane along the long side direction of rectangle or class rectangular configuration, the bond length of the spacing between two surface polishings of each optical fiber and the core cross sections of rectangle or class rectangular configuration is the same order of magnitude, and is greater than this bond length.
3. direct semiconductor laser as claimed in claim 1 or 2, is characterized in that: described light beam closes Shu Danyuan and comprises collimating cylindrical mirror group and close bundle grating; The end face of described array couples fiber-optic output is positioned on the focal plane of collimating cylindrical mirror group; The laser exported by array couples optical fiber incides and closes on bundle grating after collimating cylindrical mirror group collimation, is exported after ECDC bundle grating by part output coupling mirror, part output coupling mirror and close bundle grating and provide and feed back to LD chip array and carry out wavelength locking.
4. direct semiconductor laser as claimed in claim 3, is characterized in that: described conjunction bundle grating is transmission-type grating or reflective gratings.
5. direct semiconductor laser as claimed in claim 3, is characterized in that: also comprise and be positioned at part output coupling mirror shaping focus lens group below and output optical fibre; The conjunction Shu Jiguang exported by part output coupling mirror is through the shaping of shaping focus lens group and focusing is coupled to output optical fibre, through output optical fibre Output of laser.
6. direct semiconductor laser as claimed in claim 1 or 2, is characterized in that: also comprise and be positioned at part output coupling mirror shaping focus lens group below and output optical fibre; The conjunction Shu Jiguang exported by part output coupling mirror is through the shaping of shaping focus lens group and focusing is coupled to output optical fibre, through output optical fibre Output of laser.
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| CN201310621035.2A CN104682196A (en) | 2013-11-29 | 2013-11-29 | Direct semiconductor laser |
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| CN201310621035.2A CN104682196A (en) | 2013-11-29 | 2013-11-29 | Direct semiconductor laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493756A (en) * | 2018-02-07 | 2018-09-04 | 杭州电子科技大学 | One kind being based on Nd:YVO4/Nd:GdVO4The two-frequency laser of interwoven crystal |
| CN109683241A (en) * | 2017-10-19 | 2019-04-26 | 福州高意光学有限公司 | A kind of fiber coupler |
| CN110031981A (en) * | 2019-04-17 | 2019-07-19 | 柳江 | A kind of laser focusing structure and the product using the structure |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5268978A (en) * | 1992-12-18 | 1993-12-07 | Polaroid Corporation | Optical fiber laser and geometric coupler |
| JPH10148718A (en) * | 1996-11-19 | 1998-06-02 | Fujikura Ltd | Optical fiber for laser |
| US6240232B1 (en) * | 1996-03-29 | 2001-05-29 | Siemens Aktiengesellschaft | Process for the production of a waveguide beam converter |
| CN2770165Y (en) * | 2005-01-20 | 2006-04-05 | 中国科学院上海光学精密机械研究所 | Optical fiber laser group beam laser |
| EP1788678A1 (en) * | 2005-11-18 | 2007-05-23 | JDS Uniphase Corporation | High efficiency, wavelenght stabilized laser diode using arrayed waveguide gratings (AWG) and architecture for combining same with brightness conservation |
| WO2007097800A2 (en) * | 2005-12-12 | 2007-08-30 | Comp-Optics Llc. | Laser diode array beam translator |
| CN201430342Y (en) * | 2009-07-07 | 2010-03-24 | 福州高意通讯有限公司 | Structure of microchip laser utilizing array semiconductor light source to pump arrays |
| CN102931585A (en) * | 2012-10-31 | 2013-02-13 | 中国科学院长春光学精密机械与物理研究所 | External-cavity-beam-combination semiconductor laser fiber coupling module |
| US8588267B1 (en) * | 2012-07-24 | 2013-11-19 | Lockheed Martin Corporation | Rectangular core optical fiber and rectangular core optical fiber arrays |
-
2013
- 2013-11-29 CN CN201310621035.2A patent/CN104682196A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5268978A (en) * | 1992-12-18 | 1993-12-07 | Polaroid Corporation | Optical fiber laser and geometric coupler |
| US6240232B1 (en) * | 1996-03-29 | 2001-05-29 | Siemens Aktiengesellschaft | Process for the production of a waveguide beam converter |
| JPH10148718A (en) * | 1996-11-19 | 1998-06-02 | Fujikura Ltd | Optical fiber for laser |
| CN2770165Y (en) * | 2005-01-20 | 2006-04-05 | 中国科学院上海光学精密机械研究所 | Optical fiber laser group beam laser |
| EP1788678A1 (en) * | 2005-11-18 | 2007-05-23 | JDS Uniphase Corporation | High efficiency, wavelenght stabilized laser diode using arrayed waveguide gratings (AWG) and architecture for combining same with brightness conservation |
| WO2007097800A2 (en) * | 2005-12-12 | 2007-08-30 | Comp-Optics Llc. | Laser diode array beam translator |
| CN201430342Y (en) * | 2009-07-07 | 2010-03-24 | 福州高意通讯有限公司 | Structure of microchip laser utilizing array semiconductor light source to pump arrays |
| US8588267B1 (en) * | 2012-07-24 | 2013-11-19 | Lockheed Martin Corporation | Rectangular core optical fiber and rectangular core optical fiber arrays |
| CN102931585A (en) * | 2012-10-31 | 2013-02-13 | 中国科学院长春光学精密机械与物理研究所 | External-cavity-beam-combination semiconductor laser fiber coupling module |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109683241A (en) * | 2017-10-19 | 2019-04-26 | 福州高意光学有限公司 | A kind of fiber coupler |
| CN108493756A (en) * | 2018-02-07 | 2018-09-04 | 杭州电子科技大学 | One kind being based on Nd:YVO4/Nd:GdVO4The two-frequency laser of interwoven crystal |
| CN110031981A (en) * | 2019-04-17 | 2019-07-19 | 柳江 | A kind of laser focusing structure and the product using the structure |
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Application publication date: 20150603 |