CN105024265A - Mid-infrared laser efficiency improving method and mid-infrared laser device - Google Patents
Mid-infrared laser efficiency improving method and mid-infrared laser device Download PDFInfo
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- CN105024265A CN105024265A CN201510416551.0A CN201510416551A CN105024265A CN 105024265 A CN105024265 A CN 105024265A CN 201510416551 A CN201510416551 A CN 201510416551A CN 105024265 A CN105024265 A CN 105024265A
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Abstract
The invention discloses a mid-infrared laser efficiency improving method and a mid-infrared laser device. The mid-infrared laser device comprises a pumping source, a laser crystal and a resonant cavity; the laser crystal is arranged in the resonant cavity; the pumping source emits pumping light; the pumping light enters the laser crystal; the energy levels of the laser crystal at least comprise a ground state, a first excited state and a second excited state in a high-to-low order; and after the laser crystal is excited, population inversion occurs on the laser crystal, and the laser crystal generates first wavelength laser and second wavelength laser, wherein the first wavelength laser is mid-infrared laser which is generated by particle transition from the second excited state to the first excited state, and the second wavelength laser is laser which is generated by particle transition from the first excited state to the ground state. According to the mid-infrared laser efficiency improving method and the mid-infrared laser device of the invention, the resonant cavity structure is designed, so that the mid-infrared laser and the laser corresponding transition from mid-infrared laser lower-energy levels to the ground state can be outputted simultaneously, so that mid-infrared laser lower-energy level particles can fall to the ground state quickly, and therefore, the service lives of lower-energy level particles of the laser crystal can be shortened, and the efficiency of the laser can be improved, and dual-wavelength laser output can be realized.
Description
Technical field
The invention belongs to laser aid technical field, particularly a kind of efficiency raising method of mid-infrared laser and mid-infrared laser device.
Background technology
Since from nineteen sixty, First laser aid is born in the world, the development of all kinds of laser aid and laser technology is very rapid.Laser technology is in every field, and particularly the field such as scientific research and national defense construction is widely used, and has become one of mainstay of modern science and technology and social development.Wherein, in infrared 2.7-3 μm laser wavelength be in the strong absorption band of water, its than 10.6 μm more easily by the absorption such as water, Ca, P, can be used for the incision of juicy body tissues and bone, resection operation, therefore in biologic medical, have important application, be applied at present in the operation of ophthalmology, dentistry and laser beautifying.In addition at more than 11km high-altitude and space, because moisture content reduces in a large number, Atmospheric Absorption also greatly reduces, and also has the absorption of sub-meticulous wavelength to water more weak between 2.7-3 mu m waveband, and therefore the laser of this wave band can be directly used in space military affairs and scientific research.
The rare earth activation ion that directly can realize 2.7-3 μm of Laser output at present mainly contains Er
3+, Ho
3+.Fig. 1 is the energy level schematic diagram that these two kinds of active ions realize laser transition near 2.8 μm, wherein for Er
3+near 1.5 μm of ion (
4i
13/2extremely
4i
15/2transition) and Ho
3+near 2.0 μm of ion (
5i
7extremely
5i
8transition) near-infrared laser, owing to being the transition of excitation state to ground state level, relatively easily realize, the comparative maturity developed at present.But for Ho
3+, Er
3+2.8 μm near laser be all respectively by two excited levels
4i
11/2extremely
4i
13/2with
5i
6extremely
5i
7between transition produce, and the laser lower level life-span is longer, be unfavorable for population inversion, therefore be self termination in principle, why its 2.8 μm of laser can normally work, mainly due to upper conversion and Excited-state Absorption for laser lower level of finding time provides a passage, in Fig. 1, UC and ESA represents conversion and Excited-state Absorption process, wherein Er respectively
3+can directly absorb 970nm pump light, due to Ho
3+without absorbing near 970nm, so use Yb
3+as sensitized ions, absorptive pumping light energy passes to Ho
3+ion.
Nonetheless, although achieve Ho
3+and Er
3+the Laser output of 2.7-3 mu m waveband, but the mid-infrared laser efficiency of two kinds of active ions and power output still receive impact.The method of main research is both at home and abroad by mixing appropriate Pr at present
3+, Eu
3+and Ho
3+etc. moving back active ions, by ion resonance energy trasfer, laser lower level of finding time particle, reduces the life time of the level, thus expects to reduce laser threshold further, improves lasing efficiency and power.Although the method achieves to a certain extent improve laser output power and efficiency, but still not enough.
Summary of the invention
Based on the problems referred to above, the invention provides a kind of efficiency raising method and mid-infrared laser device of mid-infrared laser, by design cavity resonator structure, the second laser corresponding to energy level to ground state transition under mid-infrared laser and mid-infrared laser can be exported simultaneously, thus energy level particle falls back to ground state fast under making mid-infrared laser, thus reduce the laser lower level life-span, improve lasing efficiency, and realize dual-wavelength laser output.
For above-mentioned purpose, the invention provides a kind of efficiency raising method of mid-infrared laser, it is characterized in that, the energy level of laser crystal at least comprises ground state from low to high, first excited state and Second Excited State, described Second Excited State produces first wave length laser to the particle transition of described first excited state, described first excited state produces second wave length laser to the particle transition of described ground state, described first wave length laser and described second wave length laser are exported by resonant cavity simultaneously, owing to producing second wave length laser, the particle of first excited state is made to fall back to ground state fast, reduce the life-span of particle at shown first excited state, the generation efficiency of described first wave length laser is improved.
Wherein, described first wave length laser is the mid-infrared laser of 2.7-3 μm, and described laser crystal is doping Er
3+crystal or doping Ho
3+or/and the crystal of other sensitized ions.
According to another aspect of the present invention, a kind of mid-infrared laser device is provided, comprise pumping source, laser crystal resonant cavity, described laser crystal is positioned at described resonant cavity, described pumping source sends pump light and incides on described laser crystal, it is characterized in that, the energy level of described laser crystal at least comprises ground state from low to high, first excited state and Second Excited State, rear generation population inversion produce first wave length laser and second wave length laser is excited by described laser crystal, described first wave length laser is the mid-infrared laser produced to described first excited state particle transition from described Second Excited State, described second wave length laser is the laser that the particle transition from described first excited state to ground state produces.
Wherein, described resonant cavity comprises the first chamber mirror and the second chamber mirror, the high-reflecting film being coated with the described first wave length laser of reflection and second wave length laser on the surface of described intra resonant cavity of described first chamber mirror, described second chamber mirror is coated with the film system described first wave length laser and second wave length laser coupled exported.
Wherein, described laser aid also comprises spectroscope, and described spectroscope is positioned on the output light path of described resonant cavity, carries out light splitting for the first wave length laser that exports described resonant cavity and second wave length laser.
Wherein, described resonant cavity comprises the first chamber mirror group and the second chamber mirror group, and described first chamber mirror group comprises the 3rd chamber mirror and the 4th chamber mirror that are oppositely arranged, for generation of first wave length laser, described second chamber mirror group comprises the 5th chamber mirror and the 6th chamber mirror that are oppositely arranged, for generation of second wave length laser;
Described laser crystal is the crystal of four mirror polish, a chamber mirror of the relatively described resonant cavity of each burnishing surface of described laser crystal; And the high transmittance film two burnishing surfaces of the relatively described first chamber mirror group of described laser crystal are coated with to described first wave length laser light, two burnishing surfaces of relatively described second chamber mirror group is coated with the high transmittance film to described second wave length laser light.
Wherein, described 3rd chamber mirror and the 4th chamber mirror are being oppositely arranged perpendicular to described pump direction, and described 5th chamber mirror and the 6th chamber mirror are oppositely arranged being parallel to described pump direction.
Wherein, described laser aid also comprises the dispersion element being arranged on described intra resonant cavity, for first wave length laser that described laser crystal is produced and second wave length separation by laser, described resonant cavity comprises speculum and two outgoing mirrors, the face towards described intra resonant cavity of described speculum is coated with the dual wavelength high reflectivity film stack corresponding to described first wave length laser and second wave length laser, two described outgoing mirrors is coated with respectively the film system of the Single wavelength coupling output corresponding to described first wave length laser and described second wave length laser.
Wherein, described dispersion element is grating or prism.
Wherein, described laser crystal is for mixing Er
3+crystal or doping Ho
3+or/and the crystal of sensitized ions.
The efficiency raising method of mid-infrared laser provided by the invention and mid-infrared laser device, by design cavity resonator structure, the second laser corresponding to energy level to ground state transition under mid-infrared laser and mid-infrared laser can be exported simultaneously, thus energy level particle falls back to ground state fast under making mid-infrared laser, thus reduce the laser lower level life-span, improve lasing efficiency, and realize dual-wavelength laser output.
Accompanying drawing explanation
Fig. 1 shows Er
3+ion and Ho
3+ion produces the energy level transition schematic diagram of mid-infrared laser after being excited.
Fig. 2 shows the energy level schematic diagram of the laser crystal of mid-infrared laser device of the present invention.
Fig. 3 shows the structural representation of the mid-infrared laser device of the first embodiment of the present invention.
Fig. 4 shows the structural representation of the mid-infrared laser device of the second embodiment of the present invention.
Fig. 5 shows the structural representation of the mid-infrared laser device of the third embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
An embodiment provides a kind of efficiency raising method of mid-infrared laser, by cavity resonator structure reasonable in design, former optical maser wavelength and the optical maser wavelength (dual wavelength) corresponding to laser lower level to base transition between states are exported simultaneously, because laser lower level can make laser lower level particle fall back to ground state fast to the laser that base transition between states produces, thus reduce the laser lower level life-span, the efficiency of former laser is significantly improved, obtains twin wavelength laser output simultaneously.
Particularly, method of the present invention comprises: as shown in Figure 2, the energy level of laser crystal at least comprises ground state 1 from low to high, first excited state 2 and Second Excited State 3, under the exciting of pump light 4, the particle transition of Second Excited State 3 to first excited state 2 produces first wave length laser 5, first excited state 2 produces second wave length laser 6 to the particle transition of described ground state 1, first wave length laser 5 and described second wave length laser 6 are exported by resonant cavity simultaneously, the present invention forms the second laser by photon first excited state 2 (the lower energy level namely in first wave length laser production process) being transitted to ground state 1 generation by resonant cavity, the particle of lower energy level is made to fall back to ground state fast, reduce the life-span of the particle of lower energy level, thus improve particle transits to first excited state efficiency from Second Excited State, the efficiency producing mid-infrared laser is improved.
In the present invention, first wave length laser is the mid-infrared laser of 2.7-3 μm, and laser crystal is doping Er
3+crystal or doping Ho
3+or/and the crystal of other sensitized ions, namely laser crystal of the present invention can be doping Er
3+crystal, doping Ho
3+crystal, doping Ho
3+with the crystal of other sensitized ions or the crystal of other sensitized ions, sensitized ions of the present invention is all sensitized ions being suitable for producing mid-infrared laser, does not limit at this.
In another aspect of the present invention, provide a kind of mid-infrared laser device, this device comprises pumping source, laser crystal resonant cavity, described laser crystal is positioned at described resonant cavity, described pumping source sends pump light and incides on described laser crystal, the energy level of described laser crystal at least comprises ground state from low to high, first excited state and Second Excited State, rear generation population inversion produce first wave length laser and second wave length laser is excited by described laser crystal, described first wave length laser is the mid-infrared laser produced to described first excited state transition from described Second Excited State, described second wave length laser is the laser produced from described first excited state to ground state transition.
In above process, by arranging specific resonant cavity, make mid-infrared laser device can outputting dual wavelength laser, thus make laser crystal in the service life reduction of the particle of first excited state (namely descending energy level), the delivery efficiency of mid-infrared laser is improved, also achieves dual-wavelength laser simultaneously and export.
Mid-infrared laser device of the present invention is described in detail below by way of specific embodiment, the mid-infrared laser device of following examples, including pumping source, laser crystal resonant cavity, by arranging different resonant cavitys and laser crystal, realizing the output of dual-wavelength laser.
Embodiment one
Fig. 3 shows the structural representation of the mid-infrared laser device of the first embodiment of the present invention.
With reference to Fig. 3, in the first embodiment of the present invention, resonant cavity 30 comprises the first chamber mirror 301 and the second chamber mirror 302, and the first chamber mirror 301 and the second chamber mirror 302 has duplicature system respectively on the surface of intra resonant cavity, the i.e. high-reflecting film being coated with reflection first wave length laser and second wave length laser on the surface of resonant cavity 30 inside of the first chamber mirror 301, the film system be coated with first wave length laser and the output of second wave length laser coupled on the surface of resonant cavity 30 inside of the second chamber mirror 302.
By above-mentioned setting, the pump light that pumping source 10 is launched is by inciding on laser crystal 20 after coupling mirror 40, population inversion is realized after laser crystal 20 absorptive pumping light, the fluorescence produced realizes vibration and amplifies in resonant cavity 30, because the inside of the first chamber mirror 301 and the second chamber mirror 302 has duplicature system, therefore can realize vibration to the laser of two wavelength that laser crystal produces to amplify simultaneously simultaneously, thus outputting dual wavelength laser.
In addition, the output light path of resonant cavity 30 is also provided with spectroscope 50, carries out light splitting for the first laser of exporting resonant cavity 30 and the second laser.
In the present embodiment, due to the first chamber mirror of resonant cavity and the second chamber mirror having different duplicature systems, the amplification thus the laser of make laser crystal 20 produce two bundle different wave lengths vibrates simultaneously, wherein, first laser is the mid-infrared laser produced from Second Excited State to first excited state transition, and the second laser is the laser produced from first excited state to ground state transition, in this way, make the particle of first excited state can fall back to ground state fast, thus reduce the particle age of first excited state, the efficiency producing mid-infrared laser is improved.
In the present embodiment, this mid-infrared laser device is a kind of Er, Pr:GYSGG crystal laser device, and its pumping source 10 is continuous print 970nm semiconductor laser, through optical fiber and coupling mirror 30, light beam is focused at the end face of crystal; Er, Pr:GYSGG crystalline size is 2mm*2mm*5mm, first chamber mirror 301 is coated with 970nm HT & 2790nm HR & 1550nm HR film, second chamber mirror 302 is coated with 2790nm T=2% & 1550nm T=2% film, first chamber mirror 301 and the second chamber mirror 302, respectively at crystal two ends, form the most long 12mm of short cavity.Spectroscope 50 is coated with 2790nm HT & 1550nm HR film, is used for the first wave length laser produced and second wave length laser to separate.
Er, Pr:GYSGG absorption of crystal pump light realizes population inversion, wherein Er
3+4i
11/2extremely
4i
13/2transition produce 2790nm laser,
4i
13/2extremely
4i
15/2transition produce 1550nm laser, and the generation of 1550nm laser is for reduction
4i
13/2energy level population plays an important role, and makes
4i
11/2extremely
4i
13/2the lasing efficiency of transition is significantly improved.
Embodiment two
Fig. 4 shows the structural representation of the mid-infrared laser device of the second embodiment of the present invention.
With reference to Fig. 4, in the second embodiment of the present invention, resonant cavity comprises two groups of chamber mirror groups, first chamber mirror group comprises the 3rd chamber mirror and the 4th chamber mirror that are oppositely arranged, for generation of first wave length laser, the second chamber mirror group comprises the 5th chamber mirror and the 6th chamber mirror that are oppositely arranged, for generation of second wave length laser.
In the present embodiment, first chamber mirror group is included in the 3rd chamber mirror 601 and the 4th chamber mirror 602 that are oppositely arranged perpendicular to described pump direction, second chamber mirror group comprises and is parallel to the 5th chamber mirror 701 and the 6th chamber mirror 702 that pump direction is oppositely arranged, 4th chamber mirror 602 is for exporting first wave length laser, and the 6th chamber mirror 702 is for exporting second wave length laser.
In the present embodiment, laser crystal 20 is the crystal of four mirror polish, a chamber mirror of the relative resonant cavity of each burnishing surface of laser crystal 20; And the high transmittance film two burnishing surfaces of the relative first chamber mirror group of laser crystal 20 are coated with to first wave length laser light, two burnishing surfaces of relative second chamber mirror group is coated with the high transmittance film to second wave length laser light.
In the present embodiment, owing to defining two resonant cavitys, the fluorescence that laser crystal is produced can carry out vibration in the two directions and amplify, thus the laser of different wave length is defined in two different directions, and export from different output cavity mirrors, thus not only increase the generation effect of mid-infrared laser, also achieve independently exporting separately of two bundle different wave length laser.
The mid-infrared laser device of the present embodiment is a kind of Yb, Ho:YAG crystal laser device.Its pumping source 10 is continuous print 940nm semiconductor laser, through optical fiber and coupling mirror 40, light beam is focused at the end face of crystal; Yb, Ho:YAG crystalline size is 2mm*2mm*5mm, 4 mirror polish, crystal is placed in resonant cavity, and wherein the 3rd chamber mirror 601 and the 4th chamber mirror 602 form a resonant cavity, and the 5th chamber mirror 701 and the 6th chamber mirror 702 form a resonant cavity, 3rd chamber mirror 601 is coated with 940nm HT & 2900nm film, 4th chamber mirror 602 is coated with the film of 2900nmT=2%, and the 5th chamber mirror 701 is coated with 2000nm HR film, and the 6th cavity mirror plating has 2000nmT=2% film.
Yb, Ho:YAG absorption of crystal pump light realizes population inversion, wherein Ho
3+5i
6extremely
5i
7between transition produce 2900nm laser and exported by the 4th chamber mirror 602,
5i
7extremely
5i
8transition produce 2000nm laser and exported by the 6th chamber mirror 702, and the generation of 2000nm laser is for reduction
5i
7energy level population plays an important role, and makes
4i
11/2extremely
4i
13/2the lasing efficiency of transition is significantly improved.
Embodiment three
Fig. 5 shows the structural representation of the mid-infrared laser device of the third embodiment of the present invention.
With reference to Fig. 5, in the third embodiment of the present invention, mid-infrared laser device comprises pumping source, optical fiber and coupling mirror 40, laser crystal 20, resonant cavity and dispersion element 80, wherein, resonant cavity comprises speculum 901 and two outgoing mirrors 902 and 903, the face towards resonant cavity 90 inside of speculum 901 is coated with the dual wavelength film system corresponding to first wave length laser and second wave length laser, two outgoing mirrors 902 and 903 are coated with respectively the Single wavelength film system corresponding to the first laser and the second laser, dispersion element 80 is positioned at after the laser crystal 20 in the direction of pump light, for first wave length laser that laser crystal 20 is produced and second wave length separation by laser, then export from two outgoing mirrors 902 and 903 respectively.
The dispersion element of the present embodiment can be grating or prism, but is not limited to this, and other elements that can play dispersion interaction are suitable for the present invention equally.
In the present embodiment, by dispersion element 90, the two bundle laser produced are separated in resonant cavity, and exported respectively by different outgoing mirrors, thus not only increase the generation efficiency of mid-infrared laser, also achieve independently exporting separately of two bundle different wave length laser.
The mid-infrared laser device of the present embodiment is a kind of Yb, Ho:YAP crystal laser device.Its pumping source 10 is continuous print 940nm semiconductor laser, through optical fiber and coupling mirror 20, light beam is focused at the end face of laser crystal 20; Yb, Ho:YAP crystalline size is 2mm*2mm*5mm, and speculum 901 is coated with 970nm HT & 2900nm HR & 2000nm HR film, and outgoing mirror 902 is coated with 2000nm T=2% film, outgoing mirror 903 is coated with 2900nm T=2% film, and dispersion element 80 is prism.
Yb, Ho:YAP absorption of crystal pump light realizes population inversion, wherein Ho
3+5i
6extremely
5i
7between transition produce 2900nm laser and exported by outgoing mirror 902,
5i
7extremely
5i
8transition produce 2000nm laser and exported by outgoing mirror 903, and the generation of 2000nm laser is for reduction
5i
7energy level population plays an important role, and makes
4i
11/2extremely
4i
13/2the lasing efficiency of transition is significantly improved.
In the above-described embodiments, the pumping source of mid-infrared laser device can adopt the form of end pump, also can adopt the form of side pump, the two all can realize the object of the generation efficiency of above-mentioned raising mid-infrared laser, is therefore not specifically limited at the set-up mode to pumping source of the present invention.
The efficiency raising method of mid-infrared laser provided by the invention and mid-infrared laser device, by design cavity resonator structure, the second laser corresponding to energy level to ground state transition under mid-infrared laser and mid-infrared laser can be exported simultaneously, thus energy level particle falls back to ground state fast under making mid-infrared laser, thus reduce the laser lower level life-span, improve lasing efficiency, and realize dual-wavelength laser output.
Above execution mode is only for illustration of the present invention; and be not limitation of the present invention; the those of ordinary skill of relevant technical field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all equivalent technical schemes also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (10)
1. the efficiency raising method of a mid-infrared laser, it is characterized in that, the energy level of laser crystal at least comprises ground state from low to high, first excited state and Second Excited State, described Second Excited State produces first wave length laser to the particle transition of described first excited state, described first excited state produces second wave length laser to the particle transition of described ground state, described first wave length laser and described second wave length laser are exported by resonant cavity simultaneously, owing to producing second wave length laser, the particle of first excited state is made to fall back to ground state fast, reduce the life-span of particle at described first excited state, the generation efficiency of described first wave length laser is improved.
2. the efficiency raising method of mid-infrared laser as claimed in claim 1, it is characterized in that, described first wave length laser is the mid-infrared laser of 2.7-3 μm, and described laser crystal is doping Er
3+crystal or doping Ho
3+or/and the crystal of other sensitized ions.
3. a mid-infrared laser device, comprise pumping source, laser crystal resonant cavity, described laser crystal is positioned at described resonant cavity, described pumping source sends pump light and incides on described laser crystal, it is characterized in that, the energy level of described laser crystal at least comprises ground state from low to high, first excited state and Second Excited State, rear generation population inversion produce first wave length laser and second wave length laser is excited by described laser crystal, described first wave length laser is the mid-infrared laser produced to described first excited state particle transition from described Second Excited State, described second wave length laser is the laser that the particle transition from described first excited state to ground state produces.
4. mid-infrared laser device as claimed in claim 3, it is characterized in that, described resonant cavity comprises the first chamber mirror and the second chamber mirror, the high-reflecting film being coated with the described first wave length laser of reflection and second wave length laser on the surface of described intra resonant cavity of described first chamber mirror, described second chamber mirror is coated with the film system described first wave length laser and second wave length laser coupled exported.
5. mid-infrared laser device as claimed in claim 4, it is characterized in that, described laser aid also comprises spectroscope, and described spectroscope is positioned on the output light path of described resonant cavity, carries out light splitting for the first wave length laser that exports described resonant cavity and second wave length laser.
6. mid-infrared laser device as claimed in claim 3, it is characterized in that, described resonant cavity comprises the first chamber mirror group and the second chamber mirror group, described first chamber mirror group comprises the 3rd chamber mirror and the 4th chamber mirror that are oppositely arranged, for generation of first wave length laser, described second chamber mirror group comprises the 5th chamber mirror and the 6th chamber mirror that are oppositely arranged, for generation of second wave length laser;
Described laser crystal is the crystal of four mirror polish, a chamber mirror of the relatively described resonant cavity of each burnishing surface of described laser crystal; And the high transmittance film relatively described first chamber mirror group two burnishing surfaces of described laser crystal are coated with to described first wave length laser light, two burnishing surfaces of relatively described second chamber mirror group is coated with the high transmittance film to described second wave length laser light.
7. mid-infrared laser device as claimed in claim 6, it is characterized in that, described 3rd chamber mirror and the 4th chamber mirror are being oppositely arranged perpendicular to described pump direction, and described 5th chamber mirror and the 6th chamber mirror are oppositely arranged being parallel to described pump direction.
8. mid-infrared laser device as claimed in claim 3, it is characterized in that, described laser aid also comprises the dispersion element being arranged on described intra resonant cavity, for first wave length laser that described laser crystal is produced and second wave length separation by laser, described resonant cavity comprises speculum and two outgoing mirrors, the face towards described intra resonant cavity of described speculum is coated with the dual wavelength high reflectivity film stack corresponding to described first wave length laser and second wave length laser, two described outgoing mirrors are coated with respectively the film system of the Single wavelength coupling output corresponding to described first wave length laser and described second wave length laser.
9. mid-infrared laser device as claimed in claim 8, it is characterized in that, described dispersion element is grating or prism.
10. mid-infrared laser device as claimed in claim 3, it is characterized in that, described laser crystal is for mixing Er
3+crystal or doping Ho
3+or/and the crystal of sensitized ions.
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| CN112047639A (en) * | 2020-09-14 | 2020-12-08 | 深圳大学 | Based on Er3+Ion-doped ZBYA glass material, glass microsphere and dual-wavelength laser |
| WO2021212710A1 (en) * | 2020-04-24 | 2021-10-28 | 中国科学院长春光学精密机械与物理研究所 | Device and method for measuring upper energy level lifetime of co2 laser amplifier |
| CN116742463A (en) * | 2023-08-15 | 2023-09-12 | 长春理工大学 | Intermediate infrared laser of dual-wavelength pumping bonding crystal |
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| CN112047639A (en) * | 2020-09-14 | 2020-12-08 | 深圳大学 | Based on Er3+Ion-doped ZBYA glass material, glass microsphere and dual-wavelength laser |
| CN116742463A (en) * | 2023-08-15 | 2023-09-12 | 长春理工大学 | Intermediate infrared laser of dual-wavelength pumping bonding crystal |
| CN116742463B (en) * | 2023-08-15 | 2024-04-02 | 长春理工大学 | Intermediate infrared laser of dual-wavelength pumping bonding crystal |
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