CN202616598U - Passive mode-locking laser device - Google Patents
Passive mode-locking laser device Download PDFInfo
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- CN202616598U CN202616598U CN 201220177049 CN201220177049U CN202616598U CN 202616598 U CN202616598 U CN 202616598U CN 201220177049 CN201220177049 CN 201220177049 CN 201220177049 U CN201220177049 U CN 201220177049U CN 202616598 U CN202616598 U CN 202616598U
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Abstract
The utility model discloses a passive mode-locking laser device, comprising a pumping source, a laser crystal, a laser cavity and a mode-locking output structure which are arranged in sequence, wherein the laser cavity comprises an incident plane of the laser crystal and a semiconductor saturable absorption mirror SESAM; and the pumping source is arranged at one side of the incident surface of the laser crystal. According to the passive mode-locking laser device, the compact stable cavity design is adopted, GHz picosecond and femtosecond laser pulses can be output, the performances are stable, the cavity length of the resonant cavity is relatively short, and the cavity length and volume can be reduced greatly.
Description
Technical field
The utility model relates to laser technology field, particularly relates to a kind of laser with active-passive lock mould.
Background technology
Along with developing rapidly of laser technology; And the increase of application requirements; On the device of advantages of small volume, compact conformation, stable performance, total solidsization, realizing high power, high light beam quality, high efficiency, high stability and long-life laser, is the direction of laser field development.Increasing demand to ultrashort pulse laser in diverse discipline and the industry increases, for example fields such as national defence, industry, medical treatment, biology.So the ultrashort pulse laser of developing high-quality, high efficiency, high stability is current research direction.
In the prior art, a kind of locked mode picosecond laser is to adopt the dyestuff locked mode, and for example, publication number is the passive mode locking Nd:YAG picosecond laser that the patent of CN1441521 discloses a kind of bright dipping time high stability, and its electric-control system is complicated, and volume is big; Adopt the dyestuff locked mode, dyestuff has severe toxicity, and a period of time dye-dilution must be changed, and useful life is short, and contaminated environment is unfavorable for through engineering approaches, and is unfavorable for health.In addition; A kind of mould picosecond laser technology adopts active mode locking technique in the prior art, and for example, publication number is that the patent of CN2655477 discloses a kind of laser diode-pumped psec active mode locking surface waveguide laser; But because guide technology immature development; Rate of finished products is low, and this picosecond laser is difficult to obtain produce in batches, and the active mode locking poor stability.Prior art also has a kind of passive mode-locking picosecond laser technology; It is a kind of passive mode locking technology that realizes low repetition; Be that the patent of CN101562310 discloses a kind of passive mode-locking picosecond laser referring to publication number for example, it adopts equivalent confocal cavity structure, and light path is complicated; The difficult control of angle is difficult to through engineering approaches.In addition, the laser cavity of laser foldable structure repeatedly in the prior art, this structural instability, and also the chamber is longer, and structure is not compact.
To sum up can find out, in the prior art, lack that a kind of structure is small and exquisite, stable performance, GHz laser with active-passive lock mould.
The utility model content
The technical problem that the utility model will solve provides a kind of laser with active-passive lock mould, and prior art mode-locked laser volume is big in order to solve, the problem of poor stability.
For solving the problems of the technologies described above, the utility model provides a kind of laser with active-passive lock mould, comprises the pumping source that sets gradually, laser crystal, laser cavity and locked mode export structure; Wherein, laser cavity comprises the laser crystal plane of incidence and semiconductor saturable absorbing mirror SESAM; Said pumping source is placed on the plane of incidence one side of said laser crystal.
Further, said locked mode export structure can be plano-concave mirror, planoconvex lens, flat mirror, concave mirror or convex lens.
Further, said locked mode export structure can be the plano-concave mirror.
Further, said plano-concave mirror is a semi-transparent semi-reflecting lens; The radius of curvature of said plano-concave mirror is between 50mm～150mm.
Further, the angle between the axis of the normal direction of the said laser crystal plane of incidence and said plano-concave mirror is θ, wherein 0 °＜θ＜2 °.
Further, the laser transmittance of said plano-concave mirror is 2%-5%, and the laser incidence angle that said laser crystal is injected said plano-concave mirror is less than 4 °.
Further, said laser crystal is Nd:YVO4 or Yb:YAG.
Further, said laser crystal size is 3mm * 3mm * (5mm～8mm).
Further, said laser crystal plane of incidence plating wavelength anti-reflection mould and wavelength with the output light wavelength identical high-reflecting film identical with the pump light wavelength, said laser crystal exit facet is coated with the wavelength anti-reflection film identical with output light wavelength.
Further, said laser with active-passive lock mould also comprises focus lamp, and said focus lamp is placed between said pumping source and the said laser crystal.
The utility model beneficial effect is following:
The laser with active-passive lock mould of the utility model adopts succinct steady chamber design, can export psec and the femto-second laser pulse of GHz, stable performance, and the resonant cavity chamber is long shorter, can shorten the long and volume in chamber greatly.
Description of drawings
Fig. 1 is the structural representation of 1 one kinds of laser with active-passive lock mould of the utility model embodiment;
Fig. 2 is the structural representation of 2 one kinds of laser with active-passive lock mould of the utility model embodiment.
Embodiment
In order to solve the above-mentioned problem that prior art exists, the utility model provides a kind of laser with active-passive lock mould, below in conjunction with accompanying drawing and embodiment, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, does not limit the utility model.
The utility model embodiment relates to the laser with active-passive lock mould of a kind of GHz, comprises pumping source, laser crystal, laser cavity, locked mode export structure; Wherein, said pumping source is placed on the plane of incidence one side of said laser crystal, is used for the said laser crystal of pumping; Laser cavity comprises the laser crystal plane of incidence and SESAM (Semiconductor Saturable Absorber Mirror, semiconductor saturable absorbing mirror); The laser that said laser crystal sends vibrates in said laser cavity, and through said locked mode export structure locked mode output.
Said locked mode export structure can be plano-concave mirror, planoconvex lens, flat mirror, concave mirror or convex lens, and present embodiment adopts the plano-concave mirror, is semi-transparent semi-reflecting lens, is used to receive the laser from said laser crystal, and with its partial reflection to said SESAM.The radius of curvature of said plano-concave mirror is between 50mm～150mm.Angle between the axis of the normal direction of the said laser crystal plane of incidence and said plano-concave mirror is θ, wherein 0 °＜θ＜2 °.
Said laser crystal is Nd:YVO4 or Yb:YAG, and its size is 3mm * 3mm * (5mm～8mm).
Said laser crystal plane of incidence plating wavelength anti-reflection mould and wavelength with the output light wavelength identical high-reflecting film identical with the pump light wavelength, said laser crystal exit facet is coated with the wavelength anti-reflection film identical with output light wavelength.
In addition, said laser with active-passive lock mould also comprises focus lamp, and said focus lamp is placed between said pumping source and the said laser crystal, and the pump light that is used for said pumping source is sent is assembled to said laser crystal.
Be elaborated with instantiation below:
Embodiment 1
As shown in Figure 1; Present embodiment relates to a kind of laser with active-passive lock mould; Comprise: LD (Laser Diode, semiconductor laser) pumping source 1, focus lamp 2; Laser crystal 3, laser cavity peace concave mirror 4 (locked mode export structure), incident end face one side that LD pumping source 1 is placed on laser crystal 3 is used for it is carried out pumping; Focus lamp 2 is placed on and is used between pumping source 1 and the laser crystal 3 making the pump light from pumping source 1 converge to laser crystal 3, improves the pump light utilance.Angle between the axis of the normal direction of laser crystal 3 left sides and output plano-concave mirror is θ, 0 °＜θ＜2 ° wherein, thus the light of glancing incidence on plano-concave outgoing mirror 4 can not returned along former road, but reflect with low-angle 2 θ.Laser cavity comprises laser crystal left side (plane of incidence) and SESAM5.
The laser crystal size is that 3mm * 3mm * (5mm～8mm), the laser crystal incident end face plates anti-reflection film, output light wavelength (1064nm) high-reflecting film of pumping wavelength (808nm), the anti-reflection film of outgoing end face plating output wavelength (1064nm).In the present embodiment, laser crystal 3 adopts Nd:YVO4, and orthogonal polarized light output cutting mode is adopted in the crystal angle cutting.Laser crystal 3 sides are placed in the heat sink copper billet (not shown in figure 1) after wrapping up with indium platinum, are fixed on indentation, there with the support (not shown in figure 1), and adopt water-cooled or TEC (ThermoelectricCooler, semiconductor cooler) to carry out temperature control.
In addition, in this experimental example, the placement of plano-concave 4, SESAM5 can utilize laser to demarcate.Calibration process is following: with beam of laser from the center of laser crystal 3 to 4 incidents of plano-concave mirror; Plano-concave mirror 4 receives the laser of injecting from laser crystal 3, and to its reflection, makes its vertical incidence to SESAM 5.This demarcation is just as a kind of exemplary approach of confirming plano-concave mirror 4, SESAM 5 positions, and it should be appreciated by those skilled in the art that can appropriate change, as long as can realize the locked mode output of laser.
The course of work of the GHz laser with active-passive lock mould of present embodiment is following:
LD pumping source 1 sends the pumping laser of 808nm, and this pumping laser impinges perpendicularly on focus lamp 2, after it focuses on, impinges perpendicularly on the incident end face of laser crystal 3, thereby it is carried out pumping; Pump light excited crystal operation material makes its population inversion, a large amount of particle accumulation; Produce stimulated radiation; Repeatedly reflection takes place in the light that sends when stimulated radiation in laser cavity, the plane of incidence through laser crystal 3 reflexes to plano-concave mirror 4 then, focuses to SESAM 5 again; Laser is realized picosecond lasers output through plano-concave mirror 4 after being reflected by SESAM 5 again.
In addition; The plano-concave mirror 4 that present embodiment adopts be a semi-transparent semi-reflecting lens, and it can partial reflection, the part transmission, and system's two-way is exported; The laser transmittance 2%-5% of plano-concave mirror 4; The laser incidence angle that its angle setting will guarantee to accept from laser crystal 3 is less than 4 °, and this is in order to realize the low-angle reflection, and loss is little.After laser is realized the resonance locked mode, in oscillatory process, as output 1, as output 2, finally realize the output of two-way locked mode psec from SESAM 5 laser light reflected part transmissions from laser crystal 3 incident laser part transmissions.
Embodiment 2:
Like Fig. 2, comprise according to the passive mode-locking picosecond laser of the embodiment 2 of the utility model: LD pumping source 1, focus lamp 2, laser crystal 3, flat output mirror 4 and SESAM 5.Structure is identical with embodiment, no longer details.Calibration process is also identical with embodiment 1.
In the present embodiment, laser crystal 3 adopts Yb:YAG, and orthogonal polarized light output cutting mode is adopted in the crystal angle cutting.So; Laser crystal 3 output orthogonal polarized lights; This orthogonal polarized light is in that (4 focused beams of Φ=10mm) to SESAM, plano-concave outgoing mirror radius of curvature is between 50mm～150mm, and the chamber of the resonant cavity of this laser is long to be 10cm～15cm by the plano-concave mirror; Pulse repetition 1GHz～1.5GHz realizes the femtosecond laser locked mode.
Can find out that by the foregoing description the laser with active-passive lock mould of the utility model adopts succinct steady chamber design, can export psec and the femto-second laser pulse of GHz, stable performance, the resonant cavity chamber is long shorter, can shorten the long and volume in chamber greatly.
Although be the example purpose, the preferred embodiment of the utility model is disclosed, it also is possible those skilled in the art will recognize various improvement, increase and replacement, therefore, the scope of the utility model should be not limited to the foregoing description.
Claims (10)
1. a laser with active-passive lock mould is characterized in that, comprises the pumping source that sets gradually, laser crystal, laser cavity and locked mode export structure; Wherein, laser cavity comprises the laser crystal plane of incidence and semiconductor saturable absorbing mirror SESAM; Said pumping source is placed on the plane of incidence one side of said laser crystal.
2. laser with active-passive lock mould as claimed in claim 1 is characterized in that, said locked mode export structure can be plano-concave mirror, planoconvex lens, flat mirror, concave mirror or convex lens.
3. laser with active-passive lock mould as claimed in claim 2 is characterized in that, said locked mode export structure can be the plano-concave mirror.
4. laser with active-passive lock mould as claimed in claim 3 is characterized in that, said plano-concave mirror is a semi-transparent semi-reflecting lens; The radius of curvature of said plano-concave mirror is between 50mm～150mm.
5. laser with active-passive lock mould as claimed in claim 3 is characterized in that, the angle between the axis of the normal direction of the said laser crystal plane of incidence and said plano-concave mirror is θ, wherein 0 °＜θ＜2 °.
6. laser with active-passive lock mould as claimed in claim 4 is characterized in that, the laser transmittance of said plano-concave mirror is 2%-5%, and the laser incidence angle that said laser crystal is injected said plano-concave mirror is less than 4 °.
7. like claim 1 or 3 described laser with active-passive lock mould, it is characterized in that said laser crystal is Nd:YVO4 or Yb:YAG.
8. laser with active-passive lock mould as claimed in claim 7 is characterized in that, said laser crystal size is 3mm * 3mm * (5mm～8mm).
9. laser with active-passive lock mould as claimed in claim 8; It is characterized in that; Said laser crystal plane of incidence plating wavelength anti-reflection mould and wavelength with the output light wavelength identical high-reflecting film identical with the pump light wavelength, said laser crystal exit facet is coated with the wavelength anti-reflection film identical with output light wavelength.
10. laser with active-passive lock mould as claimed in claim 1 is characterized in that said laser with active-passive lock mould also comprises focus lamp, and said focus lamp is placed between said pumping source and the said laser crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220177049 CN202616598U (en) | 2012-04-24 | 2012-04-24 | Passive mode-locking laser device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220177049 CN202616598U (en) | 2012-04-24 | 2012-04-24 | Passive mode-locking laser device |
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| CN202616598U true CN202616598U (en) | 2012-12-19 |
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| CN 201220177049 Expired - Lifetime CN202616598U (en) | 2012-04-24 | 2012-04-24 | Passive mode-locking laser device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103972776A (en) * | 2014-05-20 | 2014-08-06 | 西安电子科技大学 | Laser diode pumping Kerr-lens mode locking Yb:(YLa)2O3 all-solid-state femtosecond laser device |
| CN104752945A (en) * | 2013-12-31 | 2015-07-01 | 福州高意通讯有限公司 | Short-cavity passively mode-locked laser device |
| CN106207738A (en) * | 2016-09-22 | 2016-12-07 | 广州安特激光技术有限公司 | Low-repetition-frequency passive Q-adjusted regenerative amplification lamp pump picosecond laser |
-
2012
- 2012-04-24 CN CN 201220177049 patent/CN202616598U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752945A (en) * | 2013-12-31 | 2015-07-01 | 福州高意通讯有限公司 | Short-cavity passively mode-locked laser device |
| CN103972776A (en) * | 2014-05-20 | 2014-08-06 | 西安电子科技大学 | Laser diode pumping Kerr-lens mode locking Yb:(YLa)2O3 all-solid-state femtosecond laser device |
| CN103972776B (en) * | 2014-05-20 | 2016-08-31 | 西安电子科技大学 | Laser diode-pumped kerr lens mode locking Yb:(YLa)2o3all solid state femto-second laser |
| CN106207738A (en) * | 2016-09-22 | 2016-12-07 | 广州安特激光技术有限公司 | Low-repetition-frequency passive Q-adjusted regenerative amplification lamp pump picosecond laser |
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Granted publication date: 20121219 |