CN203260887U - High power all-solid-state picosecond laser - Google Patents
High power all-solid-state picosecond laser Download PDFInfo
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- CN203260887U CN203260887U CN 201320218055 CN201320218055U CN203260887U CN 203260887 U CN203260887 U CN 203260887U CN 201320218055 CN201320218055 CN 201320218055 CN 201320218055 U CN201320218055 U CN 201320218055U CN 203260887 U CN203260887 U CN 203260887U
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Abstract
The utility model discloses a high power all-solid-state picosecond laser comprising a semiconductor laser pumping source, a laser crystal, and a resonant cavity. The laser crystal is disposed in the resonant cavity, which comprises a laser output mirror, a thermo-compensation negative lens, a first plano-concave reflector, a second plano-concave reflector, and a mode locking device. The pumping light emitted by the semiconductor laser pumping source can enter the resonant cavity after being collimated and focused by a light beam shaping device. The convex surface curvature radius of the thermo-compensation negative lens is equal to two times of the equivalent thermal lens focal length of the laser crystal, and the thermo-compensation negative lens is disposed close to the position of the laser crystal as much as possible. A small included angle between the normal direction of the thermo-compensation negative lens and the pumping light can be provided, and the laser output mirror is disposed on the reflected light path of the thermo-compensation negative lens. The thermo-compensation negative lens can be used for the compensation of the thermal lens effect of the laser crystal, and the output power and the light beam quality of the all-solid-state picosecond laser can be improved, and the heat stability of the all-solid-state picosecond laser can be improved, and therefore the stable operation of the all-solid-state picosecond laser can be realized.
Description
Technical field
The utility model relates to solid-state picosecond laser, is specifically related to all solid state picosecond laser of high power.
Background technology
Along with developing rapidly of ultrafast laser technique, the application demand of various high-octane picosecond pulse laser in fields such as industrial processes, laser medicine, military affairs and scientific researches constantly increases.For example: (pulse duration is about 10 psecs for all solid state picosecond laser, repetition rate is about 80M), well met the performance requirement of laser processing to laser, be widely used in fine processing, the processing of quasi-continuous ultraviolet circuit board, laser material processing, laser welding, cleaning, mark, wafer inspection, and the aspect such as meticulous three dimensional printing technology.
This shows that the device of, compact conformation small and exquisite at volume, stable performance, total solids realizes that high power, high light beam quality, high efficiency, high stability and long-life laser are the directions of laser field Future Development.
Chinese invention patent CN101562310 discloses a kind of " passive mode-locking picosecond laser " (application number is 200910083431.8), this technical scheme has adopted the steady chamber design of equivalent confocal cavity, increased light path, reduce repetition, it is long greatly to have shortened the chamber, thereby has reduced the volume of laser and improved stability.
Yet because the thermal lensing effect of laser crystal is limit, even improve the power in input semiconductor laser pumping source, the power output of laser output mirror end can obviously not improve thereupon yet.Therefore, the power output of existing all solid state picosecond laser is mostly less than 10W, repetition rate is but about 80MHZ in addition, this has just caused the single pulse energy of all solid state picosecond laser lower, need to carry out multistage amplification and just can reach the application requirements of laser processing, thereby so that the cost of laser greatly improves, range of application is very limited.Although can adopt fiber amplifier that picosecond laser is amplified, because the peak power of picosecond laser is high, and the damage threshold of optical fiber is lower, so be difficult to realize all solid state picosecond laser output of high-power and high-lighting beam quality.
In sum, existing all solid state picosecond laser can't provide the Output of laser of high power, high light beam quality.
The utility model content
Technical problem to be solved in the utility model is to solve because the thermal lensing effect of laser crystal is limit, and is difficult to realize the problem that all solid state picosecond laser of high-power and high-lighting beam quality is exported.
In order to solve the problems of the technologies described above, the technical scheme that the utility model adopts provides all solid state picosecond laser of a kind of high power, comprises semiconductor laser pumping source, laser crystal resonant cavity, and described laser crystals setting is in described resonant cavity; Described resonant cavity comprises laser output mirror, thermal compensation negative lens, the first plano-concave speculum, the second plano-concave speculum and clamping apparatus; The pump light that send in described semiconductor laser pumping source enters described resonant cavity behind the light-beam forming unit collimation focusing, the face of injecting of described thermal compensation negative lens is the plane, outgoing plane is protruding convex surface to described laser crystal, described convex surface plating flashlight highly reflecting films and radius of curvature equal the twice of the equivalent heat focal length of lens of described laser crystal, described thermal compensation negative lens is arranged between light-beam forming unit and the described laser crystal, be close to described laser crystal and normal direction and pump light and have angle, described laser output mirror is arranged on the reflected light path of described thermal compensation negative lens and injects face plating flashlight part reflectance coating, in described resonant cavity, the concussion of flashlight route once is: laser crystal, the first plano-concave speculum, the second plano-concave speculum, clamping apparatus, the second plano-concave speculum, the first plano-concave speculum, laser crystal, the thermal compensation negative lens, laser output mirror, the thermal compensation negative lens, laser crystal.
In such scheme, the face of injecting of described thermal compensation negative lens plating pump light anti-reflection film.
In such scheme, the face of injecting of described laser crystal plating pump light anti-reflection film, outgoing plane plating flashlight anti-reflection film.
In such scheme, the reflecting surface of described the first plano-concave speculum and the second plano-concave speculum plating flashlight highly reflecting films.
In such scheme, described clamping apparatus is semiconductor saturable absorbing mirror.
In such scheme, the concave curvature radius of described the first plano-concave speculum is that 1000mm is to 1500mm, to 1000mm, the normal direction of described the first plano-concave speculum and the second plano-concave speculum and the angle of flashlight optical path direction are 5 degree to the concave curvature radius of described the second plano-concave speculum at 200mm.
In such scheme, described laser output mirror is placed on the reflected light path of described thermal compensation negative lens, and the reflecting surface of described laser output mirror is vertical with incident light.
In such scheme, described semiconductor saturable absorbing mirror is arranged on the reflected light path of described the second plano-concave speculum, and so that incident light reflect back from former road.
In such scheme, described laser output mirror is 70% to the reflectivity of flashlight.
The utility model, the end of injecting at laser crystal is provided with thermal compensation negative lens and the placement of thermal compensation negative lens next-door neighbour laser crystal, the twice of the focal length of laser crystal equivalent heat lens and the convex curvature radius of thermal compensation negative lens are complementary, thereby utilize the thermal compensation negative lens that the thermal lensing effect of laser crystal is compensated, strengthened basic mode spot radius in the laser crystal, increased fundamental mode volume in the laser crystal, power output and the beam quality of all solid state picosecond laser have greatly been improved, also improve the thermal stability of all solid state picosecond laser, realized the stable operation of all solid state picosecond laser of high power.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model is made detailed explanation.
As shown in Figure 1, all solid state picosecond laser of the high power that the utility model provides comprises semiconductor laser pumping source 3, laser crystal 6 resonant cavity.
Semiconductor laser pumping source 3 is the 880nm semiconductor laser, the pump light that is sent by semiconductor laser pumping source 3 is at first through light-beam forming unit 4 collimation focusings, then from the surface feeding sputtering to the laser crystal in 6, convex lens form light-beam forming unit 4 by (comprising two) more than two.
What laser crystal 6 was selected is Nd:YVO4 or Nd:GdVO4 crystal, and the logical light face in two ends plates respectively pump light and flashlight anti-reflection film, and as the operation material of all solid state picosecond laser of high power, laser crystal 6 is arranged in the resonant cavity.
Thermal compensation negative lens 5 used eyeglasses are planoconvex lens, wherein, the face of injecting of thermal compensation negative lens 5 is that plane and normal direction and pump light have little angle, and the outgoing plane of thermal compensation negative lens 5 is convex surface, radius of curvature according to optics definition convex surface is negative, so be called negative lens.
If sending light (directional light), semiconductor laser pumping source 3 is directly incident on the laser crystal 6, laser crystal 6 can generate heat, equivalence is convex lens, if this moment, directional light was through laser crystal 6, directional light can become converging light, now adopt the thermal lensing effect of thermal compensation negative lens 5 compensation laser crystals 6, semiconductor laser pumping source 3 is sent light and is incided injecting on the facial plane of thermal compensation negative lens 5, penetrate after seeing through concave surface, at this moment, thermal compensation negative lens 5 is as concavees lens, and concavees lens and convex lens (laser crystal 6) have consisted of a beam expanding lens, directional light can become greatly through hot spot after the beam expanding lens, thereby counteracting laser crystal 6 is heated and becomes this phenomenon of convex lens.
Resonant cavity is comprised of laser output mirror 8, thermal compensation negative lens 5, the first plano-concave speculum 7, the second plano-concave speculum 1 and clamping apparatus.The face of the injecting plating pump light anti-reflection film of thermal compensation negative lens 5, the outgoing plane plating flashlight highly reflecting films of thermal compensation negative lens 5.The concave reflection face plating flashlight highly reflecting films of the first plano-concave speculum 7 and the second plano-concave speculum 1.What clamping apparatus adopted is semiconductor saturable absorbing mirror 2, as the passive mode locking element of the high all solid state picosecond laser of high power.The reflecting surface of semiconductor saturable absorbing mirror 2 changes in time to the high reflectance of flashlight, so the output of flashlight formation picopulse, and the logical light face in laser crystal 6 two ends has plated the flashlight anti-reflection film, has reduced the cavity loss of all solid state picosecond laser.
Thermal compensation negative lens 5 is placed between light-beam forming unit 4 and the laser crystal 6, is used for the thermal lensing effect of compensation laser crystal 6.The first plano-concave speculum 7 is placed on the axial light path of laser crystal 6, in order to increase the optical resonance cavity length of all solid state picosecond laser, the radius of curvature of the first plano-concave speculum 7 concave surfaces is chosen at 1000mm between the 1500mm, the angle of the normal direction of the first plano-concave speculum 7 and flashlight optical path direction is as far as possible little (in the present embodiment, angle is chosen for 5 °), in order to reduce the astigmatism of the first plano-concave speculum 7 meridian planes and sagittal surface.In order to control laser facula size and the optical resonance cavity length that increases all solid state picosecond laser on the semiconductor saturable absorbing mirror 2, placed the second plano-concave speculum 1 at the reflected light path of the first plano-concave speculum 7, the radius of curvature of the second plano-concave speculum 1 concave surface at 200mm between the 1000mm, in like manner, the angle of the normal direction of the second plano-concave speculum 1 and flashlight optical path direction also should as far as possible little (this routine angle be chosen for 5 °), in order to reduce the astigmatism of the second plano-concave speculum 1 meridian plane and sagittal surface.Semiconductor saturable absorbing mirror 2 is placed on the reflected light path of the second plano-concave speculum 1, and so that incident light reflect back from former road.Laser output mirror 8 is placed on the reflected light path of thermal compensation negative lens 5, because 8 pairs of flashlights of laser output mirror have transmittance, so flashlight is from laser output mirror 8 outputs.
As everyone knows, the effect of resonant cavity is to provide positive feedback for all solid state picosecond laser of high power, in the laser crystal on laser facula radius size and the semiconductor saturable absorbing mirror laser facula radius size and Q-switch and mode-locking power output closely related, therefore, in order to guarantee all solid state picosecond laser normal operation of high power, distance between the adjacent devices in the resonant cavity must satisfy laser concussion condition, and the distance by regulating resonant cavity internal reflection device is to realize the stable operation of all solid state picosecond laser.In the continuous locking mold situation, the repetition rate of picosecond laser is with optical resonance cavity length relevant (the longer repetition rate of optical resonance cavity length is lower), in order to reduce repetition rate, the optical resonance cavity length is chosen for 3 meters in the present embodiment, and corresponding repetition rate is 50MHZ.
The course of work of all solid state picosecond laser of high power that the utility model provides is as follows:
The pump light that is sent by semiconductor laser pumping source 3 through light-beam forming unit 4 collimation focusings after, pass thermal compensation negative lens 5 from the surface feeding sputtering to the laser crystal in 6, laser crystal 6 has absorbed pump light and has inspired flashlight, flashlight shakes in resonant cavity and forms stabilized lasers, and by laser output mirror 8 stable outputs.In the present embodiment, take laser crystal 6 as starting point, pulse of picosecond laser concussion, namely the route in a week is: laser crystal 6 → the first plano-concave speculums 7 → the second plano-concave speculums 1 → semiconductor saturable absorbing mirror 2 → the second plano-concave speculums 1 → the first plano-concave speculum 7 → laser crystal 6 → thermal compensation negative lens 5 → laser output mirror 8 → thermal compensation negative lens 5, get back at last laser crystal 6.
The utility model, adopted the thermal compensation negative lens that the thermal lensing effect of laser crystal is compensated, improve power output and the beam quality of all solid state picosecond laser, also improved the thermal stability of all solid state picosecond laser, realized the stable operation of all solid state picosecond laser of high power.In addition, be provided with two plano-concave speculums in the optical resonator, so that the adjusting of laser facula radius size becomes possibility on laser crystal and the semiconductor saturable absorbing mirror, and has increased the optical resonance cavity length, greatly reduce the repetition rate of all solid state picosecond laser.At last, by the power output that improves all solid state picosecond laser and the repetition rate that reduces all solid state picosecond laser, the single pulse energy of all solid state picosecond laser that greatly improves.
The utility model is not limited to above-mentioned preferred forms, and anyone should learn the structural change of making under enlightenment of the present utility model, every with the utlity model has identical or close technical scheme, all fall within the protection range of the present utility model.
Claims (9)
1. all solid state picosecond laser of high power, comprise the semiconductor laser pumping source, the laser crystal resonant cavity, described laser crystals setting is in described resonant cavity, it is characterized in that, described resonant cavity comprises laser output mirror, the thermal compensation negative lens, the first plano-concave speculum, the second plano-concave speculum and clamping apparatus, the pump light that send in described semiconductor laser pumping source enters described resonant cavity behind the light-beam forming unit collimation focusing, the face of injecting of described thermal compensation negative lens is the plane, outgoing plane is protruding convex surface to described laser crystal, described convex surface plating flashlight highly reflecting films and radius of curvature equal the twice of the equivalent heat focal length of lens of described laser crystal, described thermal compensation negative lens is arranged between light-beam forming unit and the described laser crystal, be close to described laser crystal and normal direction and pump light and have angle, described laser output mirror is arranged on the reflected light path of described thermal compensation negative lens and injects face plating flashlight part reflectance coating, in described resonant cavity, flashlight concussion route once is: laser crystal, the first plano-concave speculum, the second plano-concave speculum, clamping apparatus, the second plano-concave speculum, the first plano-concave speculum, laser crystal, the thermal compensation negative lens, laser output mirror, the thermal compensation negative lens, laser crystal.
2. all solid state picosecond laser of high power as claimed in claim 1 is characterized in that, the face of the injecting plating pump light anti-reflection film of described thermal compensation negative lens.
3. all solid state picosecond laser of high power as claimed in claim 1 is characterized in that, the face of the injecting plating pump light anti-reflection film of described laser crystal, outgoing plane plating flashlight anti-reflection film.
4. all solid state picosecond laser of high power as claimed in claim 1 is characterized in that, the reflecting surface plating flashlight highly reflecting films of described the first plano-concave speculum and the second plano-concave speculum.
5. all solid state picosecond laser of high power as claimed in claim 1 is characterized in that, described clamping apparatus is semiconductor saturable absorbing mirror.
6. all solid state picosecond laser of high power as claimed in claim 1, it is characterized in that, the concave curvature radius of described the first plano-concave speculum is that 1000mm is to 1500mm, to 1000mm, the normal direction of described the first plano-concave speculum and the second plano-concave speculum and the angle of flashlight optical path direction are 5 degree to the concave curvature radius of described the second plano-concave speculum at 200mm.
7. all solid state picosecond laser of high power as claimed in claim 1 is characterized in that, described laser output mirror is placed on the reflected light path of described thermal compensation negative lens, and the reflecting surface of described laser output mirror is vertical with incident light.
8. all solid state picosecond laser of high power as claimed in claim 5 is characterized in that, described semiconductor saturable absorbing mirror is arranged on the reflected light path of described the second plano-concave speculum, and so that incident light reflect back from former road.
9. all solid state picosecond laser of high power as claimed in claim 1 is characterized in that, described laser output mirror is 70% to the reflectivity of flashlight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320218055 CN203260887U (en) | 2013-04-25 | 2013-04-25 | High power all-solid-state picosecond laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320218055 CN203260887U (en) | 2013-04-25 | 2013-04-25 | High power all-solid-state picosecond laser |
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| CN203260887U true CN203260887U (en) | 2013-10-30 |
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| CN 201320218055 Expired - Fee Related CN203260887U (en) | 2013-04-25 | 2013-04-25 | High power all-solid-state picosecond laser |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103259176A (en) * | 2013-04-25 | 2013-08-21 | 温州市德罗斯激光科技有限公司 | High-power full-solid-state pico-second laser device |
| CN105322430A (en) * | 2015-11-19 | 2016-02-10 | 中国科学院合肥物质科学研究院 | Laser structure for 2.79 um effective compensation thermal lens effect |
-
2013
- 2013-04-25 CN CN 201320218055 patent/CN203260887U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103259176A (en) * | 2013-04-25 | 2013-08-21 | 温州市德罗斯激光科技有限公司 | High-power full-solid-state pico-second laser device |
| CN103259176B (en) * | 2013-04-25 | 2016-09-14 | 温州市德罗斯激光科技有限公司 | High-power full-solid-state pico-second laser device |
| CN105322430A (en) * | 2015-11-19 | 2016-02-10 | 中国科学院合肥物质科学研究院 | Laser structure for 2.79 um effective compensation thermal lens effect |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131030 Termination date: 20160425 |