CN113067241A - Multi-rod tandem end-pumped resonant cavity - Google Patents
Multi-rod tandem end-pumped resonant cavity Download PDFInfo
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- CN113067241A CN113067241A CN202110485901.4A CN202110485901A CN113067241A CN 113067241 A CN113067241 A CN 113067241A CN 202110485901 A CN202110485901 A CN 202110485901A CN 113067241 A CN113067241 A CN 113067241A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0813—Configuration of resonator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
Abstract
The invention discloses a multi-rod series-connection end-pumped resonant cavity, which comprises a frequency tripling system, a reflector component arranged close to the frequency tripling system, and a plurality of semiconductor laser pump source components arranged close to the reflector component; the semiconductor laser pump source components are arranged in parallel at intervals, and a laser crystal is arranged at a pump light emitting end close to each semiconductor laser pump source component; and the laser crystals are mutually connected in series. The invention adopts a multi-channel semiconductor laser pumping mode, can improve the pumping power of the semiconductor laser, simultaneously, a plurality of laser crystals are connected in series, can reduce the optical power density of a single laser crystal, further inhibit the thermal lens effect of the laser crystal, and provide a precondition for the large light spot operation of the semiconductor laser.
Description
Technical Field
The invention relates to the technical field of solid laser resonant cavities, in particular to a multi-rod series connection end-pumped resonant cavity.
Background
The semiconductor end-pumped solid-state laser has the advantages of simple structure, small volume, good beam quality, stable operation and easy integration, and is widely applied to laser processing industries such as laser cutting, laser drilling, laser marking, laser scribing, precise resistance adjustment, laser cleaning, laser inner carving and the like.
With the continuous improvement of the requirements of industrial application on laser processing effect and processing efficiency, the requirements of the market on the output wavelength of the laser are higher and higher. The output wavelength of the ultraviolet laser is only one third of that of the currently used infrared laser, the processing precision is high, and micron-scale fine processing can be realized. The photon energy of the ultraviolet laser is three times of that of the common infrared laser, so that the cold processing of the laser becomes possible, the application range is greatly expanded, and in addition, the repetition frequency of the ultraviolet laser with the wavelength of 355nm is extremely high, so that the production efficiency is improved, the social cost is saved, and the energy consumption is reduced. Therefore, in practical applications, the 355nm uv laser provides a new tool for the ablation action in micromachining, which does not cause thermal damage and microcracks to the material, and thus, is particularly advantageous in the machining of brittle materials such as glass, silicon wafers, ceramics, and the like.
Ultraviolet laser with 355nm wavelength is mainly generated by 1064nm infrared laser through a complex nonlinear conversion process, while nonlinear crystal LBO is a medium for realizing nonlinear conversion, which can be understood as follows: the ultraviolet laser with the wavelength of 1064nm is combined by LBO crystals to obtain the ultraviolet laser with the wavelength of 355 nm. Therefore, in order to obtain high-power 355nm ultraviolet laser output, the 1064nm laser power must be increased, however, the LBO crystal has a damage threshold to the 1064nm laser, and when the 1064nm laser power density on the LBO crystal exceeds a certain value, the LBO crystal is damaged quickly. Therefore, in order to reduce the power density of 1064nm laser on the LBO crystal, when the power of 1064nm laser is increased, the spot size of 1064nm laser must be increased at the same time.
Disclosure of Invention
The invention aims to provide a multi-rod tandem end-pumped resonant cavity which is used for solving the problem of overlarge laser power density on an LBO crystal of a medium-ten-watt ultraviolet laser.
In order to realize the purpose, the following technical scheme is adopted:
a multi-rod serial end-pumped resonant cavity comprises a frequency tripling system, a reflector component arranged close to the frequency tripling system, and a plurality of semiconductor laser pump source components arranged close to the reflector component; the semiconductor laser pump source components are arranged in parallel at intervals, and a laser crystal is arranged at a pump light emitting end close to each semiconductor laser pump source component; the semiconductor laser pump source assembly is used for pumping the laser crystals arranged close to the pump light emitting end of the semiconductor laser pump source assembly, and oscillation light excited on the laser crystals is reflected to the frequency tripling system through the reflector assembly; and a dichroic mirror is further arranged on the oscillating light path, and a Q switch and a first plane reflecting mirror are further sequentially arranged at a position close to the dichroic mirror.
Furthermore, a semiconductor laser reflector is arranged at the pumping light emitting end close to each semiconductor laser pumping source component, and each semiconductor laser reflector is arranged corresponding to a laser crystal; the semiconductor laser reflector is used for reflecting pump light emitted by the semiconductor laser pump source component to the corresponding laser crystal so as to pump the laser crystal.
Further, the dichroic mirror is arranged on an oscillation light path between one of the semiconductor laser mirrors and one of the laser crystals, and an incident angle of the oscillation light incident on a mirror surface of the dichroic mirror is 45 °.
Furthermore, the dichroic mirror is a planar lens, one surface of the dichroic mirror, which is opposite to the Q switch, is plated with an oscillation light high-reflection film and a pumping light antireflection film, and the other surface of the dichroic mirror is plated with a pumping light antireflection film.
Further, the semiconductor laser pump source component comprises a semiconductor laser and a beam collimation focusing device; the output end of the semiconductor laser is also provided with an optical fiber, and the semiconductor laser outputs a light beam to a light beam collimation focusing device based on optical fiber coupling; the beam collimation focusing device comprises a first focusing lens arranged close to the output end of the semiconductor laser and a second focusing lens arranged at a distance from the first focusing lens; the convex lens surface of the first focusing lens is opposite to the convex lens surface of the second focusing lens, and the light emitting point of the semiconductor laser is positioned at the focus of the first focusing lens.
Further, the first focusing lens adopts any one of the following lenses: a plano-convex spherical lens, a biconvex spherical lens, a plano-convex aspheric lens, a biconvex aspheric lens; the second focusing lens adopts any one of the following lenses: plano-convex spherical lens, biconvex spherical lens, plano-convex aspheric lens, biconvex aspheric lens.
Furthermore, the normal direction of the mirror surface of the semiconductor laser reflector and the optical path direction of the oscillating light are placed at Brewster angles; the semiconductor laser reflectors are flat lenses, one surface of one semiconductor laser reflector, which is close to the dichroic mirror, is a film coating surface, and the other surfaces of the other semiconductor laser reflectors, which are close to the laser crystal corresponding to the semiconductor laser reflector, are film coating surfaces; the film coating surface of the semiconductor laser reflector is a semiconductor laser high-reflection film and an oscillation light antireflection film.
Further, the mirror assembly comprises a second planar mirror, a third planar mirror, and a fourth planar mirror; the oscillation light excited by the laser crystal is reflected to the frequency tripling system through the second plane reflector, the third plane reflector and the fourth plane reflector in sequence, the incidence angles of the oscillation light incident to the mirror surfaces of the second plane reflector and the third plane reflector are both 45 degrees, and the incidence angle of the oscillation light incident to the first plane reflector is 0 degree.
Furthermore, the first plane reflector, the second plane reflector, the third plane reflector and the fourth plane reflector are all plane lenses, and the coating film on the coating film surface of each plane reflector is an oscillating light high-reflection film.
Further, the laser crystal adopts any one of the following crystals: YVO4 crystal, YAG crystal, GaYVO4 crystal.
By adopting the scheme, the invention has the beneficial effects that:
the resonant cavity adopts a multi-path semiconductor laser pumping mode, can improve the pumping power of the semiconductor laser, meanwhile, a plurality of laser crystals are connected in series, the optical power density of a single laser crystal can be reduced, thereby inhibiting the thermal lens effect of the laser crystal, providing a precondition for the large light spot operation of the semiconductor laser, meanwhile, the semiconductor laser reflector inserted into the resonant cavity and the oscillation light path are arranged in a Brewster angle, because the oscillating light is linearly polarized light, the Brewster angle placing mode greatly reduces the insertion loss of the semiconductor laser reflector, and simultaneously, because the thermal lens effect of the laser crystal is weaker, the cavity length of the resonant cavity can be lengthened, and the longer the cavity length is, the thicker the laser spot in the cavity is, thereby reducing the optical power density on the LBO crystal, prolonging the service life of the frequency tripling crystal and the frequency doubling crystal, and improving the stability of the ultraviolet laser.
Drawings
FIG. 1 is a schematic structural view of the present invention;
wherein the figures identify the description:
1-frequency tripling system; 2-a mirror assembly;
3-semiconductor laser pump source assembly; 4-laser crystal;
5-dichroic mirror; 6-Q switch;
7-a first plane mirror; 8, a semiconductor laser reflector;
21-a second plane mirror; 22-a third plane mirror;
23-a fourth plane mirror; 31-a semiconductor laser;
32-a first focusing lens; 33 — second focusing lens.
Detailed Description
The invention is described in detail below with reference to the figures and the specific embodiments.
Referring to fig. 1, the present invention provides a multi-rod series end-pumped resonant cavity, which includes a frequency tripling system 1, a mirror assembly 2 disposed near the frequency tripling system 1, and a plurality of semiconductor laser pump source assemblies 3 disposed near the mirror assembly 2; the semiconductor laser pump source assemblies 3 are arranged in parallel at intervals, and a laser crystal 4 is arranged at a pump light emitting end close to each semiconductor laser pump source assembly 3; the laser crystals 4 are mutually connected in series, each semiconductor laser pump source component 3 is used for pumping the laser crystals 4 arranged close to the pump light emitting end, and oscillation light excited by the laser crystals 4 is reflected to the frequency tripling system 1 through the reflector component 2; and a dichroic mirror 5 is further arranged on the oscillating light path, and a Q switch 6 and a first plane reflecting mirror 7 are further sequentially arranged at a position close to the dichroic mirror 5.
Wherein, a semiconductor laser reflector 8 is arranged at the pumping light emitting end close to each semiconductor laser pumping source component 3, and each semiconductor laser reflector 8 is arranged corresponding to one laser crystal 4; the semiconductor laser reflector 8 is used for reflecting the pump light emitted by the semiconductor laser pump source component 3 to the corresponding laser crystal 4 so as to pump the laser crystal; the dichroic mirror 5 is arranged on the oscillation light path between one of the semiconductor laser mirrors 8 and one of the laser crystals 4, and the incidence angle of the oscillation light incident on the mirror surface of the dichroic mirror 5 is 45 ° (as β in fig. 1, its reflection angle); the dichroic mirror 5 is a planar lens, one surface of the dichroic mirror 5 opposite to the Q switch 6 is plated with an oscillation light high reflection film and a pumping light antireflection film, and the other surface of the dichroic mirror 5 is plated with a pumping light antireflection film.
The semiconductor laser pump source component 3 comprises a semiconductor laser 31 and a light beam collimation and focusing device; the output end of the semiconductor laser 31 is also provided with an optical fiber, and the semiconductor laser 31 outputs a light beam to a light beam collimation focusing device based on optical fiber coupling; the beam collimating and focusing means includes a first focusing lens 32 disposed near the output end of the semiconductor laser 31, and a second focusing lens 33 disposed spaced apart from the first focusing lens 32; the lens convex surface of the first focusing lens 32 is opposite to the lens convex surface of the second focusing lens 33, and the light-emitting point of the semiconductor laser 31 is located at the focal point of the first focusing lens 32; the first focusing lens 32 is any one of the following lenses: a plano-convex spherical lens, a biconvex spherical lens, a plano-convex aspheric lens, a biconvex aspheric lens; the second focusing lens 33 is any one of the following lenses: a plano-convex spherical lens, a biconvex spherical lens, a plano-convex aspheric lens, a biconvex aspheric lens; the normal direction of the mirror surface of the semiconductor laser reflector 8 and the light path direction of the oscillating light are placed at Brewster angles; the semiconductor laser reflectors 8 are flat lenses, one surface of one semiconductor laser reflector 8, which is close to the dichroic mirror 5, is a coated surface, and the other surfaces of the other semiconductor laser reflectors 8, which are close to the laser crystals 4 corresponding to the semiconductor laser reflectors, are coated surfaces; the film coating surface of the semiconductor laser reflector 8 is a semiconductor laser high-reflection film and an oscillation light anti-reflection film.
The mirror assembly 2 comprises a second plane mirror 21, a third plane mirror 22 and a fourth plane mirror 23; the oscillation light excited by the laser crystal 4 is reflected to the frequency tripling system 1 through the second plane reflector 21, the third plane reflector 22 and the fourth plane reflector 23 in sequence, the incidence angles of the oscillation light incident to the mirror surfaces of the second plane reflector 21 and the third plane reflector 22 are both 45 degrees, the incidence angle of the oscillation light incident to the mirror surface of the fourth plane reflector 23 is slightly less than 45 degrees, so that ultraviolet light can be horizontally output from the side of the fourth plane reflector 23, and the incidence angle of the oscillation light incident to the first plane reflector 21 is 0 degree; the first plane reflector 7, the second plane reflector 21, the third plane reflector 22 and the fourth plane reflector 23 are all plane lenses, and the coating film on the coating film surface of each plane reflector is an oscillating light high-reflection film; the laser crystal 4 adopts any one of the following crystals: YVO4 crystal, YAG crystal, and GaYVO4 crystal, and the semiconductor laser has output wavelength of 875-890 nm
The working principle of the invention is as follows:
continuing to refer to fig. 1, arrow a and arrow B in fig. 1 are ultraviolet light and oscillating light, and in this embodiment, the incident angle of the oscillating light is: the angle between the light beam of the oscillation light incident to the corresponding mirror surface and the normal direction of the mirror surface; in this embodiment, the number of the semiconductor laser pump source assemblies 3 is set to four groups, so that four-way pumping can be realized, and the number thereof can be freely set according to actual use scenes, which is not limited herein; each semiconductor laser pump source component 3 can be used for pumping a laser crystal 4 (the pump light is reflected to the laser crystal 4 through the semiconductor laser reflector 8), can accurately control the growth parameters of the laser crystal 4, and optimize the heat dissipation of the laser crystal 4, so that the thermal lens effect of the laser crystal 4 can be reduced; since the pumping light is reflected to the laser crystal 4 by the semiconductor laser reflector 8, the semiconductor laser reflector 8 can not only transmit laser with 1064nm wavelength, but also reflect the semiconductor pumping light, and therefore, the coating film is specially designed, in the embodiment, the semiconductor laser reflector 8 adopts a flat lens, the coating film surface of one semiconductor laser reflector 8 is adjacent to the dichroic mirror 5, and the coating film surfaces of the other semiconductor laser reflectors 8 are adjacent to the corresponding laser crystal 4; in this embodiment, the four laser crystals 4 are connected in series, and after the multiple rods are connected in series, the pumping light power density of a single laser crystal 4 can be reduced, so as to suppress the thermal lens effect of the laser crystal 4, and meanwhile, in order to ensure the polarization characteristic of the oscillation light in the cavity, improve the polarization degree of the semiconductor laser 31 and reduce the insertion loss, the semiconductor laser reflector 8 arranged in the cavity is placed at the brewster angle with the oscillation light direction in the cavity.
As shown in fig. 1, in the frequency tripling system 1, the ultraviolet light output direction of the frequency tripling crystal inside the frequency tripling system 1 forms an angle with the transmission direction of the oscillation light in the cavity, because the ultraviolet light and the oscillation light in the cavity have different refractive indexes when being transmitted in the frequency tripling crystal, after the ultraviolet light is output from the end face of the frequency tripling crystal (the oscillation light is reflected to the frequency tripling system 1, and the ultraviolet light is emitted from the frequency tripling system after a complex nonlinear conversion process), the ultraviolet light transmission direction forms an angle (α in fig. 1) with the transmission direction of the oscillation light, in order to extract the ultraviolet light from the cavity, a second plane reflector 21, a third plane reflector 22 and a fourth plane reflector 23 are arranged in the cavity, and the ultraviolet light can be emitted from the second plane reflector 21; the design principle of the resonant cavity is explained above from the optical principle, in order to enable the oscillating light to form stable oscillation in the resonant cavity and finally obtain high-power, high-beam and high-quality ultraviolet light, the resonant cavity must also meet the general transmission rule of the gaussian beam and the design standard of the resonant cavity G parameter, therefore, the ABCD matrix transmission analysis of the gaussian beam must be performed on the resonant cavity to determine the position of the optical element in the resonant cavity, the curvature radius and other parameters.
In this embodiment, the semiconductor laser 31 can emit a light beam with a wavelength of 875nm to 890nm, and an optical fiber is further disposed at an output end of the semiconductor laser 31, and the semiconductor laser 31 outputs the light beam to the light beam collimating and focusing device based on optical fiber coupling; the first plane reflector 7, the second plane reflector 21, the third plane reflector 22 and the fourth plane reflector 23 are all plane lenses, one surface of the first plane reflector 7 opposite to the Q switch 6 is plated with an oscillating light high-reflection film, and the Q switch 6 is an acousto-optic Q switch 6 or an electro-optic Q switch 6; oscillation light high reflection films are plated on the oscillation light reflecting surfaces of the second plane reflecting mirror 21 and the third plane reflecting mirror 22, the incidence angle of the oscillation light is 45 degrees (gamma in figure 1), and the reflectivity is more than 99.9%; the resonant cavity adopts a four-way semiconductor laser pumping mode to improve the pumping power of the laser, disperses the heat on a single laser crystal 4, reduces the thermal lens effect of the laser crystal 4 and provides a precondition for the large light spot operation of the laser; meanwhile, as the thermal lens effect of the laser crystal 4 is weaker, the cavity length of the resonant cavity can be lengthened, and the longer the cavity length is, the thicker the laser spot in the cavity is, so that the optical power density on the LBO crystal is reduced, the service lives of the frequency tripling crystal and the frequency doubler crystal are prolonged, the stability of the ultraviolet laser is improved, and the high-efficiency and high-output-power stable operation of the solid ultraviolet laser is realized.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A multi-rod serial end-pumped resonant cavity is characterized by comprising a frequency tripling system, a reflector component arranged close to the frequency tripling system, and a plurality of semiconductor laser pump source components arranged close to the reflector component; the semiconductor laser pump source components are arranged in parallel at intervals, and a laser crystal is arranged at a pump light emitting end close to each semiconductor laser pump source component; the semiconductor laser pump source assembly is used for pumping the laser crystals arranged close to the pump light emitting end of the semiconductor laser pump source assembly, and oscillation light excited on the laser crystals is reflected to the frequency tripling system through the reflector assembly; and a dichroic mirror is further arranged on the oscillating light path, and a Q switch and a first plane reflecting mirror are further sequentially arranged at a position close to the dichroic mirror.
2. The multi-rod tandem end-pumped resonant cavity of claim 1, wherein a semiconductor laser mirror is further disposed near the pump light emitting end of each semiconductor laser pump source assembly, and each semiconductor laser mirror is disposed corresponding to a laser crystal; the semiconductor laser reflector is used for reflecting pump light emitted by the semiconductor laser pump source component to the corresponding laser crystal so as to pump the laser crystal.
3. The cavity of claim 2, wherein the dichroic mirror is disposed on the oscillation light path between a semiconductor laser mirror and a laser crystal, and the incidence angle of the oscillation light incident on the mirror surface of the dichroic mirror is 45 °.
4. The cavity of claim 3, wherein the dichroic mirror is a planar lens, and one side of the dichroic mirror opposite to the Q-switch is coated with a high reflection film for oscillation light and a reflection reducing film for pump light, and the other side of the dichroic mirror is coated with a reflection reducing film for pump light.
5. The multi-rod tandem end-pumped resonant cavity of claim 1, wherein the semiconductor laser pump source assembly comprises a semiconductor laser, and a beam collimating and focusing device; the output end of the semiconductor laser is also provided with an optical fiber, and the semiconductor laser outputs a light beam to a light beam collimation focusing device based on optical fiber coupling; the beam collimation focusing device comprises a first focusing lens arranged close to the output end of the semiconductor laser and a second focusing lens arranged at a distance from the first focusing lens; the convex lens surface of the first focusing lens is opposite to the convex lens surface of the second focusing lens, and the light emitting point of the semiconductor laser is positioned at the focus of the first focusing lens.
6. The cavity of claim 5, wherein the first focusing lens is any one of the following lenses: a plano-convex spherical lens, a biconvex spherical lens, a plano-convex aspheric lens, a biconvex aspheric lens; the second focusing lens adopts any one of the following lenses: plano-convex spherical lens, biconvex spherical lens, plano-convex aspheric lens, biconvex aspheric lens.
7. The multi-rod tandem end-pumped resonator as claimed in claim 2, wherein the normal direction of the mirror surface of the semiconductor laser mirror and the optical path direction of the oscillating beam are disposed at brewster's angle; the semiconductor laser reflectors are flat lenses, one surface of one semiconductor laser reflector, which is close to the dichroic mirror, is a film coating surface, and the other surfaces of the other semiconductor laser reflectors, which are close to the laser crystal corresponding to the semiconductor laser reflector, are film coating surfaces; the film coating surface of the semiconductor laser reflector is a semiconductor laser high-reflection film and an oscillation light antireflection film.
8. The multi-rod tandem end-pumped resonator of claim 1, wherein the mirror assembly comprises a second planar mirror, a third planar mirror, and a fourth planar mirror; the oscillation light excited on the laser crystal is reflected to the frequency tripling system through the second plane reflector, the third plane reflector and the fourth plane reflector in sequence, the incidence angles of the oscillation light incident to the mirror surfaces of the second plane reflector and the third plane reflector are both 45 degrees, and the incidence angle of the oscillation light incident to the first plane reflector is 0 degree.
9. The multi-rod tandem end-pumped resonator of claim 8, wherein the first, second, third and fourth planar mirrors are planar lenses, and the coating of each planar mirror is an oscillatory high reflectivity coating.
10. The multi-rod tandem end-pumped resonator of claim 1, wherein the laser crystal is any one of the following crystals: YVO4 crystal, YAG crystal, GaYVO4 crystal.
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| CN202110485901.4A CN113067241A (en) | 2021-04-30 | 2021-04-30 | Multi-rod tandem end-pumped resonant cavity |
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| CN202110485901.4A CN113067241A (en) | 2021-04-30 | 2021-04-30 | Multi-rod tandem end-pumped resonant cavity |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113540949A (en) * | 2021-07-05 | 2021-10-22 | 苏州英谷激光有限公司 | End-pumped double-module double-crystal high-power nanosecond ultraviolet laser |
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2021
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113540949A (en) * | 2021-07-05 | 2021-10-22 | 苏州英谷激光有限公司 | End-pumped double-module double-crystal high-power nanosecond ultraviolet laser |
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