CN103259176B - High-power full-solid-state pico-second laser device - Google Patents
High-power full-solid-state pico-second laser device Download PDFInfo
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- CN103259176B CN103259176B CN201310149055.4A CN201310149055A CN103259176B CN 103259176 B CN103259176 B CN 103259176B CN 201310149055 A CN201310149055 A CN 201310149055A CN 103259176 B CN103259176 B CN 103259176B
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Abstract
The invention discloses a kind of high-power full-solid-state pico-second laser device, including semiconductor laser pumping source, laser crystal resonant cavity, laser crystals setting is in resonator cavity, and resonator cavity includes laser output mirror, thermal compensation minus lens, the first plano-concave reflecting mirror, the second plano-concave reflecting mirror and clamping apparatus；The pump light that semiconductor laser pumping source sends enters resonator cavity after light-beam forming unit collimation focusing；The convex radius of thermal compensation minus lens quite and is placed in the position close proximity to laser crystal with the twice of the equivalent heat focal length of lens of laser crystal, the normal direction of thermal compensation minus lens and pump light have little angle, and laser output mirror is arranged on the reflected light path of thermal compensation minus lens.The present invention uses thermal compensation minus lens to compensate the thermal lensing effect of laser crystal, improve output and the beam quality of full-solid-state pico-second laser device, also improve the heat stability of full-solid-state pico-second laser device, it is achieved that the stable operation of high-power full-solid-state pico-second laser device.
Description
Technical field
The present invention relates to solid-state picosecond laser, be specifically related to high-power full-solid-state pico-second laser device.
Background technology
Along with developing rapidly of ultrafast laser technique, various high-octane picosecond pulse laser add in industry
The application demand in the fields such as work, laser medicine, military affairs and scientific research is continuously increased.Such as: Quan Gu
State picosecond laser (, at 10 picoseconds, repetition rate is at about 80M for pulse width), well meets
The Laser Processing performance requirement to laser instrument, is widely used in fine processing, quasi-continuous ultraviolet circuit
Plate processing, laser material process, laser welding, cleaning, mark, wafer inspection, and subtle three-dimensional
The aspects such as printing technology.
As can be seen here, compact, compact conformation, stable performance, total solids device on realize
High power, high light beam quality, high efficiency, high stability and long-life laser instrument be laser field from now on
The direction of development.
Chinese invention patent CN101562310 discloses one " passive mode-locking picosecond laser " (application number
It is 200910083431.8), this technical scheme have employed the steady chamber design of equivalence confocal cavity, increases light
Journey, reduces repetition, substantially reduces chamber long, thus reduce the volume of laser instrument and improve stability.
But, owing to the thermal lensing effect of laser crystal is limited, even if improving input semiconductor laser
The power of pumping source, the output of laser output mirror end also will not significantly improve therewith.Therefore, existing
The output of some full-solid-state pico-second laser device is mostly less than 10W, and repetition rate is but at 80MHZ in addition
Left and right, this single pulse energy having resulted in full-solid-state pico-second laser device is relatively low, needs to carry out multistage putting
Can be only achieved greatly the application requirement of Laser Processing, so that the cost of laser instrument is greatly improved, application
Scope is very limited.Although can use fiber amplifier that picosecond laser is amplified, but due to
The peak power of picosecond laser is high, and the damage threshold of optical fiber is relatively low, so being difficult to Gao Gong
The all-solid-state picosecond laser output of rate high light beam quality.
In sum, existing full-solid-state pico-second laser device cannot provide high power, high light beam quality
Output of laser.
Summary of the invention
The technical problem to be solved is to solve to be limited due to the thermal lensing effect of laser crystal,
The problem being difficult to the all-solid-state picosecond laser output of high-power and high-lighting beam quality.
In order to solve above-mentioned technical problem, the technical solution adopted in the present invention is to provide a kind of high power
Full-solid-state pico-second laser device, including semiconductor laser pumping source, laser crystal resonant cavity, described sharp
Luminescent crystal is arranged in described resonator cavity；Described resonator cavity include laser output mirror, thermal compensation minus lens,
First plano-concave reflecting mirror, the second plano-concave reflecting mirror and clamping apparatus；Described semiconductor laser pumping source is sent out
The pump light gone out enters described resonator cavity after light-beam forming unit collimation focusing, and described thermal compensation is negative thoroughly
The face of injecting of mirror is plane, and outgoing plane is the convex surface being convex to described laser crystal, described convex surface plating signal
Light highly reflecting films and radius of curvature are equal to the twice of the equivalent heat focal length of lens of described laser crystal, described
Thermal compensation minus lens is arranged between light-beam forming unit and described laser crystal, is close to described laser brilliant
Body and normal direction have angle with pump light, and it is negative thoroughly that described laser output mirror is arranged on described thermal compensation
The partially reflective film of flashlight, in described resonator cavity, flashlight are plated on the reflected light path of mirror and face of injecting
Concussion route once be: laser crystal, the first plano-concave reflecting mirror, the second plano-concave reflecting mirror, lock
Die device, the second plano-concave reflecting mirror, the first plano-concave reflecting mirror, laser crystal, thermal compensation minus lens,
Laser output mirror, thermal compensation minus lens, laser crystal.
In such scheme, face of the injecting plating pump light anti-reflection film of described thermal compensation minus lens.
In such scheme, face of the injecting plating pump light anti-reflection film of described laser crystal, outgoing plane plating letter
Number light anti-reflection film.
In such scheme, the reflecting surface plating letter of described first plano-concave reflecting mirror and the second plano-concave reflecting mirror
Number light highly reflecting films.
In such scheme, described clamping apparatus is semiconductor saturable absorbing mirror.
In such scheme, the concave curvature radius of described first plano-concave reflecting mirror is that 1000mm arrives
1500mm, the concave curvature radius of described second plano-concave reflecting mirror at 200mm to 1000mm, described
The normal direction of one plano-concave reflecting mirror and the second plano-concave reflecting mirror is with the angle of flashlight optical path direction
5 degree.
In such scheme, described laser output mirror is placed on the reflected light path of described thermal compensation minus lens
On, and the reflecting surface of described laser output mirror is vertical with incident illumination.
In such scheme, described semiconductor saturable absorbing mirror is arranged on described second plano-concave reflecting mirror
Reflected light path on, and incident illumination is reflected back from Yuan Lu.
In such scheme, described laser output mirror is 70% to the reflectance of flashlight.
The present invention, the end of injecting at laser crystal is provided with thermal compensation minus lens and thermal compensation minus lens is tight
Adjacent laser crystal is placed, and the twice of the focal length of laser crystal equivalent heat lens is convex with thermal compensation minus lens
Curvature radius matches, thus utilizes thermal compensation minus lens to carry out the thermal lensing effect of laser crystal
Compensate, increase fundamental mode spot radius in laser crystal, add fundamental mode volume in laser crystal, greatly
Improve greatly output and the beam quality of full-solid-state pico-second laser device, also improve all solid state psec
The heat stability of laser instrument, it is achieved that the stable operation of high-power full-solid-state pico-second laser device.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is described in detail.
As it is shown in figure 1, the high-power full-solid-state pico-second laser device that the present invention provides, swash including quasiconductor
Optical pumping source 3, laser crystal 6 resonant cavity.
Semiconductor laser pumping source 3 is 880nm semiconductor laser, by semiconductor laser pumping source 3
The pump light sent is first through light-beam forming unit 4 collimation focusing, then brilliant from surface feeding sputtering to laser
In body 6, by more than two panels (comprising two panels), convex lens forms light-beam forming unit 4.
What laser crystal 6 was selected is Nd:YVO4 or Nd:GdVO4 crystal, and two ends lead to bright finish and plate respectively
Pump light and flashlight anti-reflection film, as the operation material of high-power full-solid-state pico-second laser device, laser
Crystal 6 is arranged in resonator cavity.
Eyeglass used by thermal compensation minus lens 5 is planoconvex lens, wherein, thermal compensation minus lens 5 inject face
Having little angle for plane and normal direction with pump light, the outgoing plane of thermal compensation minus lens 5 is convex surface,
Radius of curvature according to optical definitions convex surface is negative, so referred to as minus lens.
It is directly incident on laser crystal 6 if semiconductor laser pumping 3 sends light (directional light),
Laser crystal 6 can generate heat, and is equivalent to a convex lens, if now directional light is through laser crystal 6, flat
Row light can become converging light, now uses thermal compensation minus lens 5 to compensate the thermal lensing effect of laser crystal 6,
What semiconductor laser pumping 3 sent that light incides thermal compensation minus lens 5 injects on facial plane, through recessed
Penetrating behind face, now, (laser is brilliant as concavees lens, concavees lens and convex lens for thermal compensation minus lens 5
Body 6) constitute a beam expanding lens, directional light hot spot after beam expanding lens can become big, thus offset and swash
Luminescent crystal 6 is heated and becomes this phenomenon of convex lens.
Resonator cavity is flat by laser output mirror 8, thermal compensation minus lens the 5, first plano-concave reflecting mirror 7, second
Recessed reflecting mirror 1 and clamping apparatus composition.Face of the injecting plating pump light anti-reflection film of thermal compensation minus lens 5,
The outgoing plane plating flashlight highly reflecting films of thermal compensation minus lens 5.First plano-concave reflecting mirror 7 and second is flat
The concave reflection face plating flashlight highly reflecting films of recessed reflecting mirror 1.Clamping apparatus uses quasiconductor can
Saturated absorption mirror 2, as the passive mode-locking element of high power high full-solid-state pico-second laser device.Quasiconductor can
The high reflectance of flashlight is changed by the reflecting surface of saturated absorption mirror 2 in time, therefore flashlight
Formation picopulse exports, and laser crystal 6 two ends lead to bright finish and plated flashlight anti-reflection film, reduce
The cavity loss of full-solid-state pico-second laser device.
Laser output mirror 8 plates flashlight partially reflecting mirror, partially reflective to flashlight, and its reflectance can
It is adjusted according to concrete output situation, in the present embodiment, the laser output mirror 8 reflection to flashlight
Rate is 70%.
Thermal compensation minus lens 5 is placed between light-beam forming unit 4 and laser crystal 6, is used for compensating
The thermal lensing effect of laser crystal 6.First plano-concave reflecting mirror 7 is placed on the axial light of laser crystal 6
Lu Shang, in order to increase the optical resonance cavity length of full-solid-state pico-second laser device, the first plano-concave reflecting mirror 7
The radius of curvature of concave surface is chosen between 1000mm to 1500mm, the normal of the first plano-concave reflecting mirror 7
Direction and the angle the least (in the present embodiment, angle is chosen for 5 °) of flashlight optical path direction,
To reduce the astigmatism of the first plano-concave reflecting mirror 7 meridian plane and sagittal surface.Can satisfy to control quasiconductor
With laser facula size on mirror 2 and the optical resonance cavity length that increases full-solid-state pico-second laser device, the
The second plano-concave reflecting mirror 1, the second plano-concave reflecting mirror 1 is placed on the reflected light path of one plano-concave reflecting mirror 7
The radius of curvature of concave surface is between 200mm to 1000mm, in like manner, and the normal of the second plano-concave reflecting mirror 1
The angle of direction and flashlight optical path direction also should the least (this example angle be chosen for 5 °), in order to
Reduce the astigmatism of the second plano-concave reflecting mirror 1 meridian plane and sagittal surface.Semiconductor saturable absorbing mirror 2 is put
Put on the reflected light path of the second plano-concave reflecting mirror 1, and incident illumination is reflected back from Yuan Lu.Swash
Light outgoing mirror 8 is placed on the reflected light path of thermal compensation minus lens 5, owing to outgoing mirror 8 is to flashlight
Having transmittance, therefore flashlight exports from laser output mirror 8.
It is known that the effect of resonator cavity is to provide positive feedback for high-power full-solid-state pico-second laser device,
Laser facula radius size on laser facula radius size and semiconductor saturable absorbing mirror in laser crystal
Closely related with Q-switch and mode-locking output, therefore, in order to ensure high-power full-solid-state pico-second laser device
Normal work, the distance between adjacent devices in resonator cavity must is fulfilled for laser concussion condition, passes through
The distance of regulation resonator cavity internal reflection device is to realize the stable operation of full-solid-state pico-second laser device.Even
In the case of continuous locked mode, the repetition rate of picosecond laser is with the relevant (optical resonator of optical resonance cavity length
The longest repetition rate of length is the lowest), in order to reduce repetition rate, optical resonance cavity length in the present embodiment
Being chosen for 3 meters, corresponding repetition rate is 50MHZ.
The work process of the high-power full-solid-state pico-second laser device that the present invention provides is as follows:
The pump light sent by semiconductor laser pumping source 3 after light-beam forming unit 4 collimation focusing,
Through thermal compensation minus lens 5 from surface feeding sputtering to laser crystal in 6, laser crystal 6 absorbs pumping
Light also inspires flashlight, and flashlight shakes formation stabilized lasers in resonator cavity, and is exported by laser
The stable output of mirror 8.In the present embodiment, with laser crystal 6 as starting point, picosecond laser one arteries and veins of concussion
Punching, the route of i.e. a week is: laser crystal 6 → the first plano-concave reflecting mirror 7 → the second plano-concave reflecting mirror 1
→ semiconductor saturable absorbing mirror 2 → the second plano-concave reflecting mirror 2 → the first plano-concave reflecting mirror 1 → laser is brilliant
Body 6 → thermal compensation minus lens 5 → laser output mirror, 8 → thermal compensation minus lens 5, eventually passes back to laser brilliant
Body 6.
The present invention, have employed thermal compensation minus lens and compensates the thermal lensing effect of laser crystal, carry
The output of high full-solid-state pico-second laser device and beam quality, also improve all-solid-state picosecond laser
The heat stability of device, it is achieved that the stable operation of high-power full-solid-state pico-second laser device.It addition, optics
The recessed reflecting mirror of double flat it is provided with so that laser on laser crystal and semiconductor saturable absorbing mirror in resonator cavity
The regulation of spot radius size is possibly realized, and adds optical resonance cavity length, greatly reduces complete
The repetition rate of solid-state picosecond laser.Finally, by improving the output work of full-solid-state pico-second laser device
Rate and the repetition rate of reduction full-solid-state pico-second laser device, the full-solid-state pico-second laser device being greatly improved
Single pulse energy.
The present invention is not limited to above-mentioned preferred forms, and anyone should learn the enlightenment in the present invention
Under the structure change made, every have same or like technical scheme with the present invention, each falls within this
Within the protection domain of invention.
Claims (6)
1. high-power full-solid-state pico-second laser device, including semiconductor laser pumping source, laser crystal harmony
Shake chamber, and described laser crystals setting is in described resonator cavity, it is characterised in that described resonator cavity includes
Laser output mirror, thermal compensation minus lens, the first plano-concave reflecting mirror, the second plano-concave reflecting mirror and locked mode dress
Putting, the pump light that described semiconductor laser pumping source sends enters after light-beam forming unit collimation focusing
Described resonator cavity, the face of injecting of described thermal compensation minus lens is plane, and outgoing plane is for being convex to described laser
The convex surface of crystal, described convex surface plating flashlight highly reflecting films and radius of curvature are equal to described laser crystal
The twice of the equivalent heat focal length of lens, described thermal compensation minus lens be arranged on light-beam forming unit and described swash
Between luminescent crystal, it is close to described laser crystal and normal direction, with pump light, there is angle, described laser
It is partially reflective that outgoing mirror is arranged on the reflected light path of described thermal compensation minus lens and injects face plating flashlight
Film, the reflecting surface of described laser output mirror is vertical with incident illumination, and in described resonator cavity, flashlight shakes
Swinging route once is: laser crystal, the first plano-concave reflecting mirror, the second plano-concave reflecting mirror, locked mode fill
Put, the second plano-concave reflecting mirror, the first plano-concave reflecting mirror, laser crystal, thermal compensation minus lens, laser
Outgoing mirror, thermal compensation minus lens, laser crystal；Face of the injecting plating pump light of described thermal compensation minus lens
Anti-reflection film, a length of 3 meters of described resonator cavity, corresponding repetition rate is 50MZ, described first flat
The concave curvature radius of recessed reflecting mirror is 1000mm to 1500mm, the concave surface of described second plano-concave reflecting mirror
Radius of curvature is in 200mm to 1000mm, described first plano-concave reflecting mirror and the method for the second plano-concave reflecting mirror
Line direction is 5 degree with the angle of flashlight optical path direction.
2. high-power full-solid-state pico-second laser device as claimed in claim 1, it is characterised in that described
Face of the injecting plating pump light anti-reflection film of laser crystal, outgoing plane plating flashlight anti-reflection film.
3. high-power full-solid-state pico-second laser device as claimed in claim 1, it is characterised in that described
The reflecting surface plating flashlight highly reflecting films of the first plano-concave reflecting mirror and the second plano-concave reflecting mirror.
4. high-power full-solid-state pico-second laser device as claimed in claim 1, it is characterised in that described
Clamping apparatus is semiconductor saturable absorbing mirror.
5. high-power full-solid-state pico-second laser device as claimed in claim 4, it is characterised in that described
Semiconductor saturable absorbing mirror is arranged on the reflected light path of described second plano-concave reflecting mirror, and make into
She Guangcongyuan road reflects back.
6. high-power full-solid-state pico-second laser device as claimed in claim 1, it is characterised in that described
Laser output mirror is 70% to the reflectance of flashlight.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310149055.4A CN103259176B (en) | 2013-04-25 | 2013-04-25 | High-power full-solid-state pico-second laser device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310149055.4A CN103259176B (en) | 2013-04-25 | 2013-04-25 | High-power full-solid-state pico-second laser device |
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| CN103259176A CN103259176A (en) | 2013-08-21 |
| CN103259176B true CN103259176B (en) | 2016-09-14 |
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| CN201310149055.4A Expired - Fee Related CN103259176B (en) | 2013-04-25 | 2013-04-25 | High-power full-solid-state pico-second laser device |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108512025B (en) * | 2018-04-10 | 2024-05-14 | 西南大学 | Passive Q-switched Yb CaYAlO4All-solid-state pulse laser |
| CN108767633B (en) * | 2018-08-27 | 2024-02-02 | 深圳市格镭激光科技有限公司 | Multiple beam-expanding resonant cavity for ultraviolet laser |
| CN109802288A (en) * | 2019-03-06 | 2019-05-24 | 北京赢圣科技有限公司 | The all solid state compact picosecond laser of high power |
| CN111952821A (en) * | 2020-07-02 | 2020-11-17 | 苏州曼德特光电技术有限公司 | High-power picosecond laser |
| CN112260051B (en) * | 2020-10-31 | 2023-06-09 | 罗根激光科技（武汉）有限公司 | 1342nm infrared solid laser |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6393035B1 (en) * | 1999-02-01 | 2002-05-21 | Gigatera Ag | High-repetition rate passively mode-locked solid-state laser |
| CN1787303A (en) * | 2004-12-06 | 2006-06-14 | 郑州大学 | High power inner cavity frequency doubling laser |
| CN102832536A (en) * | 2012-08-16 | 2012-12-19 | 中国科学院光电研究院 | Resonant cavity for outputting mode-locking picosecond laser and mode-locking picosecond laser device |
| CN203260887U (en) * | 2013-04-25 | 2013-10-30 | 温州市德罗斯激光科技有限公司 | High power all-solid-state picosecond laser |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7864821B2 (en) * | 2007-09-28 | 2011-01-04 | Fujifilm Corporation | Mode-locked solid-state laser apparatus |
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2013
- 2013-04-25 CN CN201310149055.4A patent/CN103259176B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6393035B1 (en) * | 1999-02-01 | 2002-05-21 | Gigatera Ag | High-repetition rate passively mode-locked solid-state laser |
| CN1787303A (en) * | 2004-12-06 | 2006-06-14 | 郑州大学 | High power inner cavity frequency doubling laser |
| CN102832536A (en) * | 2012-08-16 | 2012-12-19 | 中国科学院光电研究院 | Resonant cavity for outputting mode-locking picosecond laser and mode-locking picosecond laser device |
| CN203260887U (en) * | 2013-04-25 | 2013-10-30 | 温州市德罗斯激光科技有限公司 | High power all-solid-state picosecond laser |
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Effective date of registration: 20170705 Address after: 528300 Guangdong city in Foshan Province town of Beijiao District of Shunde City neighborhood design design City No. 1 northbound Sanle two Institute building 7 building 706-2 room Co-patentee after: Quan Hongyan Patentee after: Guangdong Shunde consequently Intelligent Equipment Co. Ltd. Address before: 325000 Zhejiang city of Wenzhou province Wenzhou high tech Industrial Park, Aojiang Road No. 81 building B two factory Co-patentee before: Quan Hongyan Patentee before: Wenzhou Deluosi Laser Technology Co., Ltd. |
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