CN103066486B - Large-power 1064 nm near-infrared laser based on wattle structure - Google Patents
Large-power 1064 nm near-infrared laser based on wattle structure Download PDFInfo
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- CN103066486B CN103066486B CN201210577664.5A CN201210577664A CN103066486B CN 103066486 B CN103066486 B CN 103066486B CN 201210577664 A CN201210577664 A CN 201210577664A CN 103066486 B CN103066486 B CN 103066486B
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Abstract
The invention discloses a large-power 1064 nm near-infrared laser based on a wattle structure. The large-power 1064 nm near-infrared laser based on the wattle structure is characterized in that the large-power 1064 nm near-infrared laser based on the wattle structure comprises a laser crystal, optical lenses placed on both sides of the laser crystal and a semiconductor laser pumping module, a laser resonant cavity forming pump lights into 1064 nm lasers with high beam quality and a modulating component modulating the lasers, wherein the laser crystal is a wafer with the wattle structure, an optical direction of the pump lights is in the wafer, a M-shaped light path is formed by the lasers in the laser. The large-power 1064 nm near-infrared laser based on the wattle structure has the advantages that the first-order hot focus, the stress birefringence and the depolarization effect can be lightened even eliminated through the reasonable M-shaped light path designed and the curvature radius of the cylindrical mirror chosen appropriately, thus the simple wattle laser structure is used so as to obtain better light bean quality and higher output power. A diaphragm is arranged inside the laser resonant cavity and can further improve the light beam quality.
Description
Technical field
The present invention relates to a kind of all solid state laser, be specifically related to a kind of high-power 1064nm near infrared laser based on battened construction.
Background technology
Because having, the advantage such as conversion efficiency is high, good stability, compact conformation, long service life becomes one of focus of current solid-state laser technical research to laser diode-pumped all solid state laser, and wherein slab laser is in widespread attention because pumping efficiency is high, radiating efficiency is good.Adopt the high power solid state laser of bar-shaped working media when long time running, the radial symmetry gradient of working media makes rod present thermal lensing effect and birefringence effect, and then seriously reduce beam quality, limit output level and the high-repetition-rate running of laser.For the solid state laser of battened construction, by " M " font light path reasonable in design, can alleviate and even eliminate single order hot focus, stress birfringence and fevering sodium effect, thus obtain the power output of better beam quality and Geng Gao.Just propose the concept of slab laser design as far back as the W.B.Martin etc. of 20 GE companies of the century 70 U.S., make the distribution of slab crystal internal temperature field be tending towards even, greatly reduce the thermal effect benefit of crystal itself.But there is the shortcomings such as complex structural designs, absorption length is short, pumping efficiency is low in the program, limits it and further develop.Existing 1064nm laser be mostly adopt rhabdolith obtain 1064nm near-infrared laser export, the heat load that can bear due to rod-shaped laser crystal and pumping light power limited, directly limit the high-power output of 1064nm near-infrared laser.
Summary of the invention
For solving the deficiencies in the prior art, the object of the present invention is to provide a kind of high-power 1064nm near infrared laser obtaining the power output of better beam quality and Geng Gao based on battened construction.
In order to realize above-mentioned target, the present invention adopts following technical scheme:
A kind of high-power 1064nm near infrared laser based on battened construction, it is characterized in that, comprise: laser crystal, the semiconductor laser pumping module of separation aforementioned laser crystal both sides, be arranged at the set of lenses between aforementioned laser crystal and semiconductor laser pumping module, and laserresonator, modulation device that aforementioned laser is modulated that the pump light launched by aforesaid semiconductor pump laser module forms the 1064nm laser of high light beam quality; Aforementioned laser crystal is the thin slice of lath shape, and the optical direction of pump light is within thin slice; " C " axle of aforementioned laser crystal is vertically placed or horizontal positioned; Aforementioned laser resonant cavity is made up of chamber mirror; Font light path that aforementioned laser is formed in the laser " M ".
The aforesaid high-power 1064nm near infrared laser based on battened construction, it is characterized in that, aforementioned cavities mirror comprises: cylindrical mirror, level crossing, the other both sides of aforementioned cylindrical mirror and level crossing separation laser crystal.
The aforesaid high-power 1064nm near infrared laser based on battened construction, it is characterized in that, aforementioned cylindrical mirror is 2, is symmetrical arranged, and symmetry axis overlaps with the symmetry axis of semiconductor laser pumping module.
The aforesaid high-power 1064nm near infrared laser based on battened construction, is characterized in that, also comprise: be heat sink, aforementionedly heat sinkly to contact with the top and bottom of laser crystal thin slice.
The aforesaid high-power 1064nm near infrared laser based on battened construction, it is characterized in that, it is rectangular one dimension directional light that the pump light that aforesaid semiconductor pump laser module sends is converged to cross section through set of lenses, the width up and down of aforementioned one dimension directional light is the half of laser crystal thickness, and length is less than the length of laser crystal.
The aforesaid high-power 1064nm near infrared laser based on battened construction, it is characterized in that, laser crystal in the middle of the semiconductor laser pumping module pumping simultaneously of aforementioned separation laser crystal both sides, or any one in two semiconductor laser pumping modules carries out independent pumping to laser crystal.
The aforesaid high-power 1064nm near infrared laser based on battened construction, is characterized in that, the centre wavelength of aforesaid semiconductor pump laser module is 808nm or 880nm.
The aforesaid high-power 1064nm near infrared laser based on battened construction, is characterized in that, aforementioned laser crystal is Nd:YVO4 crystal or Nd:YLF crystal, Nd:YAG crystal, Nd:Glass crystal, Yb:YAG crystal, Er:YAG crystal.
The aforesaid high-power 1064nm near infrared laser based on battened construction, is characterized in that, aforementioned modulation device is the passive Q-adjusted switch of acousto-optic modulator, electro-optical modulation device or absorption-type.
The aforesaid high-power 1064nm near infrared laser based on battened construction, it is characterized in that, also comprise: diaphragm, aforementioned diaphragm is arranged in laserresonator.
Usefulness of the present invention is: by " M " font light path reasonable in design, and suitably select the radius of curvature of cylindrical mirror, can alleviate and even eliminate single order hot focus, stress birfringence and fevering sodium effect, thus utilize simple slab laser structure to obtain the power output of better beam quality and Geng Gao; Diaphragm is set in laserresonator, can further improve beam quality; In addition, when not changing laser internal structure, within the scope of laser crystal destruction value, can by improving the pump power of semiconductor laser pumping module, the power density of basic frequency laser in further increase chamber, thus obtain the output of more high-power 1064nm near-infrared laser.
Accompanying drawing explanation
Fig. 1 is the structural representation of a specific embodiment of the high-power 1064nm near infrared laser that the present invention is based on battened construction;
The implication of Reference numeral in figure: 1-semiconductor laser pumping module, 2-lens, 3-cylindrical mirror, 4-laser crystal, 5-cylindrical mirror, 6-lens, 7-semiconductor laser pumping module, 8-level crossing, 9-modulation device, 10-level crossing, 11-level crossing, 12-level crossing, 13-diaphragm, 14-level crossing.
Embodiment
Below in conjunction with the drawings and specific embodiments, concrete introduction is done to the present invention.
With reference to Fig. 1, the high-power 1064nm near infrared laser that the present invention is based on battened construction comprises: laser crystal 4, the semiconductor laser pumping module 1,7 of separation laser crystal 4 both sides, be arranged at the lens 2,6 between laser crystal 4 and semiconductor laser pumping module 1,7, lens 2,6 form set of lenses, and pump light semiconductor laser pumping module 1,7 to be launched forms the laserresonator of the 1064nm laser of high light beam quality, also comprises: the modulation device 9 modulated the 1064nm laser of above-mentioned high light beam quality.
Lower mask body introduces laserresonator.
With reference to Fig. 1, this laserresonator is made up of chamber mirror, is specifically made up of cylindrical mirror 3,5 and level crossing 8,10,11,12,14.Cylindrical mirror 3,5 is arranged at the side of laser crystal 4, and level crossing 8,10,11,12,14 is arranged at the opposite side of laser crystal 4.Wherein, level crossing 8,14 vertical two ends being arranged at laserresonator, level crossing 10,12 tilts 45 °, 135 ° and be arranged at the centre of laserresonator respectively, level crossing 11 in being horizontally disposed with, font light path that laser is formed in the laser " M "; Adjusting device 9 is arranged between level crossing 8,10.
In the present invention, cylindrical mirror 3,5 is symmetrical arranged, and symmetry axis overlaps with the symmetry axis of semiconductor laser pumping module 1,7.
As the preferred scheme of one, cylindrical mirror 3,5 and level crossing 8,10,11,12 are all coated with 1064nm laser high-reflecting film; Level crossing 14 is coated with 1064nm laser high transmittance film, pump light high-reflecting film.
In the present invention, laser crystal 4 is the thin slice of lath shape, and it puts into heat radiation crystal cup with after indium foil parcel, and the optical direction of pump light is within thin slice.In addition, " C " axle of laser crystal 4 is vertically placed, and " C " axle also can half-twist and horizontal positioned.
As the preferred scheme of one, laser crystal 4 is Nd:YVO4 crystal or Nd:YLF crystal, Nd:YAG crystal, Nd:Glass crystal, Yb:YAG crystal, Er:YAG crystal.
More preferably, two end faces of laser crystal 4 are all coated with pump light and the anti-reflection anti-reflection film of 1064nm laser, in order to increase its absorption to pump light.
As the preferred scheme of one, near infrared laser of the present invention also comprises heat sink (not shown).The top and bottom of heat sink and laminar laser crystal 4 contact, and can ensure effective conduction of heat.
As the preferred scheme of one, semiconductor laser pumping module 1,7 is semiconductor laser diode, its centre wavelength is 808nm, maximum power output is 30W, also can select the semiconductor laser pumping module of other centre wavelengths such as 880nm according to the difference of selected laser crystal 4.
As the preferred scheme of one, modulation device 9 is the passive Q-adjusted switch of acousto-optic modulator, electro-optical modulation device or absorption-type.
More preferably, two end faces of modulation device 9 are all coated with 1064nm anti-reflection film.
As the preferred scheme of one, the end face of lens 2,6 is all coated with the high transmittance film to pump light.
In the present invention, it is rectangular one dimension directional light that the pump light that semiconductor laser pumping module 1,7 sends is converged to cross section through set of lenses, as the preferred scheme of one, the width up and down of this one dimension directional light is the half of laser crystal 4 thickness, and length is less than the length of laser crystal 4.
In the present invention, the semiconductor laser pumping module 1,7 of separation laser crystal 4 both sides is the laser crystals 4 in the middle of simultaneously pumping, can also be that any one in two semiconductor laser pumping modules 1,7 carries out independent pumping to laser crystal 4.
As the preferred scheme of one, near infrared laser of the present invention also comprises diaphragm 13, and diaphragm 13 is arranged in laserresonator, in order to improve beam quality further.
With reference to Fig. 1, the operation principle of near infrared laser of the present invention is: the wire pump light that semiconductor laser pumping module 1,7 exports is converged to the end face of laser crystal 4 by lens 2,6, stimulated emission is produced after laser crystal 4 absorptive pumping light energy, the light launched forms the basic frequency laser of high beam under the modeling effect of laserresonator (being made up of cylindrical mirror 3,5 and level crossing 8,10,11,12,14), under the modulating action of modulation device 9, obtain the modulated laser of high-peak power.
Adopt near infrared laser of the present invention, when not changing laser internal structure, within the scope of laser crystal destroying value, the pump power of laser diode can also be improved, the power density of basic frequency laser in further increase chamber, thus obtain the output of more high-power mid-infrared laser.
In addition, solid near infrared laser based on battened construction of the present invention, compared to the near infrared laser based on bar-shaped working media, by " M " font light path reasonable in design, and suitably select the radius of curvature of cylindrical mirror, can alleviate and even eliminate single order hot focus, stress birfringence and fevering sodium effect, thus utilize simple slab laser structure to obtain the power output of better beam quality and Geng Gao.
It should be noted that, above-described embodiment does not limit the present invention in any form, the technical scheme that the mode that all employings are equal to replacement or equivalent transformation obtains, and all drops in protection scope of the present invention.
Claims (8)
1. based on the high-power 1064nm near infrared laser of battened construction, it is characterized in that, comprise: laser crystal (4), the the first semiconductor laser pumping module (1) of above-mentioned laser crystal (4) both sides of living apart and the second semiconductor laser pumping module (7), be arranged at above-mentioned laser crystal (4) and the set of lenses between the first semiconductor laser pumping module (1) and the second semiconductor laser pumping module (7), and the pump light above-mentioned first semiconductor laser pumping module (1) and the second semiconductor laser pumping module (7) to be launched forms the laserresonator of the 1064nm laser of high light beam quality, to the modulation device (9) that above-mentioned laser is modulated, the thin slice that above-mentioned laser crystal (4) is lath shape, the optical direction of pump light is within thin slice, " C " axle of above-mentioned laser crystal (4) is vertically placed or horizontal positioned, above-mentioned laserresonator is made up of chamber mirror, above-mentioned chamber mirror comprises: the first cylindrical mirror (3), second cylindrical mirror (5), first level crossing (8), second level crossing (10), 3rd level crossing (11), 4th level crossing (12), 5th level crossing (14), above-mentioned first cylindrical mirror (3) and the second cylindrical mirror (5) are arranged at the side of above-mentioned laser crystal (4), above-mentioned first level crossing (8), second level crossing (10), 3rd level crossing (11), 4th level crossing (12) and the 5th level crossing (14) are arranged at the opposite side of above-mentioned laser crystal (4), above-mentioned first level crossing (8) and the 5th level crossing (14) are arranged at the two ends of above-mentioned laserresonator vertically, above-mentioned second level crossing (10) and the 4th level crossing (12) tilt 45 ° and 135 ° be arranged at the centre of above-mentioned laserresonator respectively, and above-mentioned 3rd level crossing (11) is in being horizontally disposed with, above-mentioned first cylindrical mirror (3) and the second cylindrical mirror (5) are symmetrical arranged, its symmetry axis overlaps with the symmetry axis of described first semiconductor laser pumping module (1) and the second semiconductor laser pumping module (7), above-mentioned adjusting device (9) is arranged between described first level crossing (8), the second level crossing (10), and above-mentioned laser forms " M " font light path in the laser.
2. the high-power 1064nm near infrared laser based on battened construction according to claim 1, is characterized in that, also comprise: be heat sink, above-mentionedly heat sinkly to contact with the top and bottom of laser crystal (4) thin slice.
3. the high-power 1064nm near infrared laser based on battened construction according to claim 1, it is characterized in that, it is rectangular one dimension directional light that the pump light that above-mentioned first semiconductor laser pumping module (1) and the second semiconductor laser pumping module (7) send is converged to cross section through set of lenses, the width up and down of above-mentioned one dimension directional light is the half of laser crystal (4) thickness, and length is less than the length of laser crystal (4).
4. the high-power 1064nm near infrared laser based on battened construction according to claim 1, it is characterized in that, laser crystal (4) in the middle of the pumping simultaneously of first semiconductor laser pumping module (1) of above-mentioned separation laser crystal (4) both sides and the second semiconductor laser pumping module (7), or any one in two the first semiconductor laser pumping modules (1) and the second semiconductor laser pumping module (7) carries out independent pumping to laser crystal (4).
5. the high-power 1064nm near infrared laser based on battened construction according to claim 1, is characterized in that, the centre wavelength of above-mentioned first semiconductor laser pumping module (1) and the second semiconductor laser pumping module (7) is 808nm or 880nm.
6. the high-power 1064nm near infrared laser based on battened construction according to claim 1, it is characterized in that, above-mentioned laser crystal (4) is Nd:YVO4 crystal, Nd:YLF crystal, Nd:YAG crystal, Nd:Glass crystal, Yb:YAG crystal or Er:YAG crystal.
7. the high-power 1064nm near infrared laser based on battened construction according to claim 1, is characterized in that, said modulator part (9) is acousto-optic modulator, electro-optical modulation device or the passive Q-adjusted switch of absorption-type.
8. the high-power 1064nm near infrared laser based on battened construction according to claim 1 to 7 any one, it is characterized in that, also comprise: diaphragm (13), above-mentioned diaphragm (13) is arranged in laserresonator.
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