CN203103753U - Slat-structure-based high-power 532nm green laser - Google Patents
Slat-structure-based high-power 532nm green laser Download PDFInfo
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- CN203103753U CN203103753U CN 201220732268 CN201220732268U CN203103753U CN 203103753 U CN203103753 U CN 203103753U CN 201220732268 CN201220732268 CN 201220732268 CN 201220732268 U CN201220732268 U CN 201220732268U CN 203103753 U CN203103753 U CN 203103753U
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Abstract
The utility model discloses a slat-structure-based high-power 532nm green laser. The slat-structure-based high-power 532nm green laser is characterized by comprising a semiconductor laser pumping module, a lens assembly, a slat lamellar laser crystal, a laser resonant cavity used for converting pumping light into base frequency laser, a modulator and a green nonlinear crystal used for frequency conversion of modulation laser. The laser resonant cavity comprises cavity mirrors, and the laser forms an 'M'-shaped light path in the laser. Due to the adoption of the slat-structure-based high-power 532nm green laser, the conditions of first-order heat focusing, stress birefringence and depolarization effect can be alleviated and even eliminated by designing the reasonable 'M'-shaped light path and properly selecting curvature radius of cylindrical mirrors. Therefore, the higher light beam quality and the higher output power are obtained by the aid of a simple slat laser structure. With the interior structure of the laser unchanged, the power density of intra-cavity base frequency laser is further increased within the laser crystal damage value range by increasing pumping power of the semiconductor laser pumping module.
Description
Technical field
The present invention relates to a kind of all solid state laser, be specifically related to a kind of high-power 532nm green (light) laser based on battened construction.
Background technology
Laser diode-pumped all solid state laser makes one of its focus that becomes current solid-state laser technical research because of having advantages such as conversion efficiency height, good stability, compact conformation, long service life, and wherein slab laser is subjected to extensive attention owing to pumping efficiency height, radiating efficiency are good.The high power solid state laser that adopts bar-shaped working media is when long-time running, the radial symmetry gradient of working media makes rod present thermal lensing effect and birefringence effect, and then seriously reduced beam quality, limited the output level and the high-repetition-rate running of laser.For the solid state laser of battened construction, can be by " M " font light path reasonable in design, alleviate even eliminate single order hot focus, stress birfringence and fevering sodium effect, thereby obtain the power output of better beam quality and Geng Gao.The W.B.Martin etc. of U.S. GE company has just proposed the notion of slab laser design as far back as the seventies in 20th century, makes the distribution of slab crystal internal temperature field be tending towards evenly, has greatly reduced the hot benefit of crystal itself.But there are shortcomings such as complex structural designs, absorption length is short, pumping efficiency is low in this scheme, has limited its further development.Mostly existing green (light) laser is to adopt the rod-shaped laser crystal to obtain the output of 1064nm basic frequency laser, carries out frequency inverted to green laser then and exports.Because heat load and pumping light power that the rod-shaped laser crystal can bear are limited, have directly limited the high-power output of green laser.
Summary of the invention
For solving the deficiencies in the prior art, the object of the present invention is to provide a kind of high-power 532nm green (light) laser that obtains the power output of better beam quality and Geng Gao based on battened construction.
In order to realize above-mentioned target, the present invention adopts following technical scheme:
A kind of high-power 532nm green (light) laser based on battened construction, it is characterized in that, comprise: laser crystal, the semiconductor laser pumping module of separation aforementioned laser crystal both sides, be arranged at the set of lenses between aforementioned laser crystal and the semiconductor laser pumping module, the pump light that the aforesaid semiconductor pump laser module is launched converts the laserresonator of the basic frequency laser of high light beam quality to, the modulation device that aforementioned basic frequency laser is modulated, and the green glow nonlinear crystal that aforementioned basic frequency laser is carried out frequency translation; The aforementioned laser crystal is the thin slice of lath shape, and the optical direction of pump light is within thin slice, and " C " of laser crystal axle is placed or the half-twist horizontal positioned straight up; The aforementioned laser resonant cavity is made up of the chamber mirror, and laser forms " M " font light path in laser.
Aforesaid high-power 532nm green (light) laser based on battened construction, it is characterized in that, the aforementioned cavities mirror comprises: cylindrical mirror, level crossing, concave mirror, aforementioned cylindrical mirror is arranged at a side of laser crystal, level crossing and concave mirror are arranged at the opposite side of laser crystal, and before being arranged at the green glow nonlinear crystal along the optical path direction concave mirror.
Preferably, cylindrical mirror is coated with 1064nm laser high-reflecting film with the end face that is arranged at green glow nonlinear crystal level crossing before, be arranged at green glow nonlinear crystal level crossing afterwards and be coated with 1064nm and 532nm laser high-reflecting film, the end face of concave mirror is coated with to 1064nm laser high-reflecting film, to 532nm laser high transmittance film.
Aforesaid high-power 532nm green (light) laser based on battened construction is characterized in that the aforementioned laser crystal is the Nd:YVO4 crystal, perhaps Nd:YLF crystal, Nd:YAG crystal, Nd:Glass crystal, Yb:YAG crystal, Er:YAG crystal.
Aforesaid high-power 532nm green (light) laser based on battened construction is characterized in that the centre wavelength of aforesaid semiconductor pump laser module is 808nm or 880nm.
Aforesaid high-power 532nm green (light) laser based on battened construction, it is characterized in that, it is rectangular one dimension directional light that the pump light that the aforesaid semiconductor pump laser module sends is converged to the cross section through set of lenses, the width up and down of aforementioned one dimension directional light is half of laser crystal thickness, and length is less than the length of laser crystal.
Aforesaid high-power 532nm green (light) laser based on battened construction, it is characterized in that, laser crystal in the middle of the pumping simultaneously of the semiconductor laser pumping module of aforementioned separation laser crystal both sides, perhaps any one in two semiconductor laser pumping modules carried out independent pumping to laser crystal.
Aforesaid high-power 532nm green (light) laser based on battened construction is characterized in that aforementioned modulation device is the passive Q-adjusted switch of acousto-optic modulator, electro-optical modulation device or absorption-type.
Preferably, two of aforementioned modulation device end faces all are coated with the 1064nm anti-reflection film.
Aforesaid high-power 532nm green (light) laser based on battened construction is characterized in that aforementioned green glow nonlinear crystal is I class LBO, perhaps II class LBO, II class KTP, II class BBO, II class CLBO.
Aforesaid high-power 532nm green (light) laser based on battened construction is characterized in that two end faces of aforementioned green glow nonlinear crystal all are coated with 1064nm and the double-colored high transmittance film of 532nm.
Aforesaid high-power 532nm green (light) laser based on battened construction is characterized in that also comprise: be used to improve the diaphragm of beam quality, aforementioned diaphragm is arranged in the laserresonator.
Usefulness of the present invention is: by " M " font light path reasonable in design, and the radius of curvature of suitably selecting cylindrical mirror, can alleviate even eliminate single order hot focus, stress birfringence and fevering sodium effect, thereby utilize simple slab laser structure to obtain the power output of better beam quality and Geng Gao; And, under the situation that does not change the laser internal structure, in laser crystal destruction value scope, can be by improving the pump power of semiconductor laser pumping module, further increase the power density of basic frequency laser in the chamber, thereby obtain more high-power green laser output.
Description of drawings
Fig. 1 is the structural representation of a specific embodiment that the present invention is based on the high-power 532nm green (light) laser of battened construction;
The implication of Reference numeral among the figure: 1-semiconductor laser pumping module, 2-lens, 3-cylindrical mirror, the 4-laser crystal, 5-cylindrical mirror, 6-lens, 7-semiconductor laser pumping module, 8-level crossing, 9-modulation device, the 10-level crossing, 11-level crossing, 12-level crossing, the 13-diaphragm, 14-level crossing, 15-concave mirror, 16-green glow nonlinear crystal, the 17-level crossing.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is done concrete introduction.
With reference to Fig. 1, the high-power 532nm green (light) laser that the present invention is based on battened construction comprises: laser crystal 4, the semiconductor laser pumping module 1,7 of separation laser crystal 4 both sides, be arranged at the lens 2,6 between laser crystal 4 and the semiconductor laser pumping module 1,7, lens 2,6 are formed set of lenses, the pump light that semiconductor laser pumping module 1,7 is launched converts the laserresonator of the basic frequency laser of high light beam quality to, the modulation device 9 that above-mentioned basic frequency laser is modulated, and the green glow nonlinear crystal 16 that above-mentioned basic frequency laser is carried out frequency translation.Wherein, laser crystal 4 is the thin slice of lath shape, and the optical direction of pump light is within thin slice; Laserresonator is made up of the chamber mirror, and laser forms " M " font light path in laser.
In the present invention, " C " of laser crystal 4 axle is placed straight up, and it can also half-twist be a horizontal positioned, and is corresponding, and green glow nonlinear crystal 16 also half-twist is placed.
As a kind of preferred scheme, the high transmittance film that lens 2,6 all are coated with pump light.
Introduce laserresonator below in detail.
With reference to Fig. 1, this laserresonator is made up of the chamber mirror, and specifically by cylindrical mirror 3,5, level crossing 8,10,11,12,14,17 and concave mirror 15 are formed. Cylindrical mirror 3,5 is arranged at a side of laser crystal 4, level crossing 8,10,11,12,14,17 and concave mirror 15 are arranged at the opposite side of laser crystal 4, wherein, level crossing 8 vertically is provided with, level crossing 11 is horizontally disposed with, level crossing 10,12,14,17 and concave mirror 15 all are obliquely installed, and after optical path direction concave mirror 15 is arranged at level crossing 14, before the green glow nonlinear crystal 16, level crossing 17 is as the green laser speculum.
As a kind of preferred scheme, the end face of concave mirror 15 is coated with to 1064nm laser high-reflecting film, to 532nm laser high transmittance film; Cylindrical mirror 3,5 and level crossing 8,10,11,12,14 all are coated with 1064nm laser high-reflecting film; Level crossing 17 is coated with 1064nm laser and 532nm laser high-reflecting film.
In the present invention, laser crystal 4 is the Nd:YVO4 crystal, and it can also be basic frequency laser crystal such as Nd:YLF crystal, Nd:YAG crystal, Nd:Glass crystal, Yb:YAG crystal, Er:YAG crystal.
As a kind of preferred scheme, two end faces of laser crystal 4 all are coated with pump light and the anti-reflection anti-reflection film of 1064nm laser, in order to increase the absorption to pump light.
More preferably, on the top and bottom of laser crystal 4, also be provided with heat sink (not shown), heat sinkly contact, can guarantee effective conduction of heat with laser crystal 4.
In the present invention, semiconductor laser pumping module 1,7 is semiconductor laser diode, its centre wavelength is 808nm, and maximum power output is 30W, also can select for example semiconductor laser pumping module of 880nm of other centre wavelengths for use according to the difference of selected laser crystal 4.
Laser crystal 4 in the middle of semiconductor laser pumping module 1,7 pumping simultaneously also can be that in two semiconductor laser pumping modules 1,7 any one carried out independent pumping to laser crystal 4.
It is rectangular one dimension directional light that the pump light that semiconductor laser pumping module 1,7 is sent is converged to the cross section through lens 2,6, as a kind of preferred scheme, the width up and down of above-mentioned one dimension directional light is half of laser crystal 4 thickness, and length is less than the length of laser crystal 4, smaller getting final product.
As a kind of preferred scheme, modulation device 9 is the passive Q-adjusted switch of acousto-optic modulator, electro-optical modulation device or absorption-type.
More preferably, two of modulation device 9 end faces all are coated with the 1064nm anti-reflection film.
In the present invention, green glow nonlinear crystal 16 is arranged between concave mirror 15 and the level crossing 17.The formed basic frequency laser of modeling effect through laserresonator obtains modulated laser after modulation device 9 modulation, this modulated laser finally obtains the output of 532nm green laser through the frequency inverted effect of green glow nonlinear crystal 16.
As a kind of preferred scheme, green glow nonlinear crystal 16 is I class LBO, II class LBO, II class KTP, II class BBO, II class CLBO.
More preferably, two of green glow nonlinear crystal 16 end faces all are coated with 1064nm, reach the double-colored high transmittance film of 532nm.
As a kind of preferred scheme, green glow nonlinear crystal 16 and laser crystal 4 are all with putting into the heat radiation crystal cup behind the indium foil parcel.
As a kind of preferred scheme, green (light) laser of the present invention also comprises diaphragm 13, and diaphragm 13 is arranged in the laserresonator, in order to further raising beam quality.
With reference to Fig. 1, the operation principle of green (light) laser of the present invention is: semiconductor laser pumping module 1,7 pump lights that send are through lens 2, directly inject the end face of laser crystal 4 after 6 convergences, produce stimulated emission after the laser crystal 4 absorptive pumping light energies, the light of launching at laserresonator (by cylindrical mirror 3,5, level crossing 8,10,11,12,14,17 and concave mirror 15 form) the modeling effect form the basic frequency laser of high light beam quality down, this basic frequency laser is after the modulation of modulation device 9, obtain the modulated laser of high-peak power, this modulated laser finally obtains the output of 532nm green laser through the frequency inverted effect of green glow nonlinear crystal 16.
Green (light) laser of the present invention, under the situation that does not change the laser internal structure, in laser crystal destroys the threshold values scope, can also improve the pump power of laser diode, further increase the power density of basic frequency laser in the chamber, thereby obtain more high-power green laser output.
In addition, solid green light laser based on battened construction of the present invention, than green (light) laser based on bar-shaped working media, by " M " font light path reasonable in design, and the radius of curvature of suitably selecting cylindrical mirror, can alleviate even eliminate single order hot focus, stress birfringence and fevering sodium effect, thereby utilize simple slab laser structure to obtain the power output of better beam quality and Geng Gao.
Need to prove that the foregoing description does not limit the present invention in any form, all employings are equal to the technical scheme that mode obtained of replacement or equivalent transformation, all drop in protection scope of the present invention.
Claims (10)
1. based on the high-power 532nm green (light) laser of battened construction, it is characterized in that, comprise: laser crystal (4), the live apart semiconductor laser pumping module (1 of above-mentioned laser crystal (4) both sides, 7), be arranged at above-mentioned laser crystal (4) and semiconductor laser pumping module (1,7) set of lenses between, with above-mentioned semiconductor laser pumping module (1,7) pump light of launching converts the laserresonator of the basic frequency laser of high light beam quality to, the modulation device (9) that above-mentioned basic frequency laser is modulated, and the green glow nonlinear crystal (16) that above-mentioned basic frequency laser is carried out frequency translation; Above-mentioned laser crystal (4) is the thin slice of lath shape, and the optical direction of pump light is within thin slice, and " C " of laser crystal (4) axle is placed or the half-twist horizontal positioned straight up; Above-mentioned laserresonator is made up of chamber mirror (3,5,8,10,11,12,14,15,17), and laser forms " M " font light path in laser.
2. the high-power 532nm green (light) laser based on battened construction according to claim 1, it is characterized in that, above-mentioned chamber mirror comprises: cylindrical mirror (3,5), level crossing (8,10,11,12,14,17), concave mirror (15), above-mentioned cylindrical mirror (3,5) be arranged at a side of laser crystal (4), level crossing (8,10,11,12,14,17) and concave mirror (15) be arranged at the opposite side of laser crystal (4), and be arranged at green glow nonlinear crystal (16) before along optical path direction concave mirror (15), preferably, cylindrical mirror (3,5) and level crossing (8,10,11,12,14) end face is coated with 1064nm laser high-reflecting film, the end face of concave mirror (15) is coated with 1064nm laser high-reflecting film, to 532nm laser high transmittance film, level crossing (17) is coated with 1064nm and 532nm laser high-reflecting film.
3. the high-power 532nm green (light) laser based on battened construction according to claim 1, it is characterized in that, above-mentioned laser crystal (4) is the Nd:YVO4 crystal, perhaps Nd:YLF crystal, Nd:YAG crystal, Nd:Glass crystal, Yb:YAG crystal, Er:YAG crystal.
4. the high-power 532nm green (light) laser based on battened construction according to claim 1 is characterized in that the centre wavelength of above-mentioned semiconductor laser pumping module (1,7) is 808nm or 880nm.
5. the high-power 532nm green (light) laser based on battened construction according to claim 1, it is characterized in that, it is rectangular one dimension directional light that the pump light that above-mentioned semiconductor laser pumping module (1,7) is sent is converged to the cross section through set of lenses, the width up and down of above-mentioned one dimension directional light is half of laser crystal (4) thickness, and length is less than the length of laser crystal (4).
6. the high-power 532nm green (light) laser based on battened construction according to claim 1, it is characterized in that, laser crystal (4) in the middle of the pumping simultaneously of the semiconductor laser pumping module (1,7) of above-mentioned separation laser crystal (4) both sides, perhaps any one in two semiconductor laser pumping modules (1,7) carried out independent pumping to laser crystal (4).
7. the high-power 532nm green (light) laser based on battened construction according to claim 1, it is characterized in that, said modulator part (9) is the passive Q-adjusted switch of acousto-optic modulator, electro-optical modulation device or absorption-type, preferably, two end faces of said modulator part (9) all are coated with the 1064nm anti-reflection film.
8. the high-power 532nm green (light) laser based on battened construction according to claim 1 is characterized in that above-mentioned green glow nonlinear crystal (16) is I class LBO, perhaps II class LBO, II class KTP, II class BBO, II class CLBO.
9. the high-power 532nm green (light) laser based on battened construction according to claim 8 is characterized in that two end faces of above-mentioned green glow nonlinear crystal (16) all are coated with 1064nm and the double-colored high transmittance film of 532nm.
10. according to any described high-power 532nm green (light) laser of claim 1 to 9, it is characterized in that also comprise: be used to improve the diaphragm (13) of beam quality, above-mentioned diaphragm (13) is arranged in the laserresonator based on battened construction.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220732268 CN203103753U (en) | 2012-12-27 | 2012-12-27 | Slat-structure-based high-power 532nm green laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220732268 CN203103753U (en) | 2012-12-27 | 2012-12-27 | Slat-structure-based high-power 532nm green laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022885A (en) * | 2012-12-27 | 2013-04-03 | 苏州镭创光电技术有限公司 | Slat structure based high-power 532nm green laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022885A (en) * | 2012-12-27 | 2013-04-03 | 苏州镭创光电技术有限公司 | Slat structure based high-power 532nm green laser |
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Granted publication date: 20130731 Termination date: 20161227 |