CN200953430Y - Semiconductor end pumping air-cooling single-mode green-light laser - Google Patents
Semiconductor end pumping air-cooling single-mode green-light laser Download PDFInfo
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- CN200953430Y CN200953430Y CN 200620041336 CN200620041336U CN200953430Y CN 200953430 Y CN200953430 Y CN 200953430Y CN 200620041336 CN200620041336 CN 200620041336 CN 200620041336 U CN200620041336 U CN 200620041336U CN 200953430 Y CN200953430 Y CN 200953430Y
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Abstract
The utility model relates to a semiconductor end-pumped air-cooled single-mode green laser which comprises a continuous-wave laser diode with a drive power supply and an output coupling fiber, a shaping optical system formed by a first plane convex lens and a second plane convex lens, a 45-degree reflex resonator formed by a concave-convex lens with an inward concave surface, a plane lens and a plane convex lens with an inward convex surface; wherein the plane lens is provided with a 532 nm 45-degree reflex plane mirror in the laser output direction, the 45-degree reflex plane mirror is provided with a laser output power fluctuant detection unit formed by a frosted glass plate and a silicon photodiode in the transmission direction, and the output end of the silicon photodiode is connected with the drive power supply through a feedback unit. The output wavelength of the laser provided in the utility model is 532 nm green light, the average output power of the continuous-wave operation mode reaches 4 W, and the light beam quality factor M<2> is less than or equal to 1.1; the utility model has the TEM00 single-transverse mode, the air-cooled whole machine and the small volume, and thereby is particularly applied to the ophthalmology, the laser illuminated target, the laser marking, the carving, the laser show, etc.
Description
Technical field
The utility model relates to a kind of wind cooled, single mold green light laser of solid frequency double laser, particularly a kind of pumped at end face of semiconductor.
Technical background
Most traditionally solid state lasers all are the lamp pump laser.Pumping lamp mostly is from ultraviolet to infrared continuous broad spectrum light source.And laser medium, absorption spectra as Nd:YAG is 560～600nm, 720～770nm and three narrow wave bands of 780～820nm, therefore, a large amount of unabsorbed pump lights not only have no contribution to generation of Laser, on the contrary, can heat Nd:YAG rod and pumping cavity, make Nd:YAG form serious and unsettled thermal lensing effect.Vertical unstable thermal lensing effect makes laser produce multimode, pulse stretcher and power instability.Laterally thermal lensing effect makes the big thermal gradient of solid laser medium generation, forms tangential and radial stress birefringence effect, makes laser polarization state instability even depolarization, causes the decline of laser delivery efficiency, power to reduce and instability.In addition, the inefficiency of lamp pumping needing to cause large power supply and big capacity cooling-water machine, and the fluctuating of temperature control causes the instability of laser output again.
In recent years, along with high power semiconductor laser diode array manufacturing technology is increasingly mature, the pump light source that semiconductor laser diode is used as solid state laser became possibility.Semiconductor laser diode array emitted laser spectral width is 2.2nm, temperature is floated and is 0.25nm/ ℃, and can be transferred to the spectral line of emission of semiconductor laser diode the center spectrum lambda c=807.6 ± 2nm place of strong absorption bands of Nd:YAG by temperature control, and at this wave band, the absorption line width of Nd:YAG is 2nm, so the laser pumping light of semiconductor laser diode can be absorbed fully by Nd:YAG.Compare with the lamp pumping, the semiconductor laser diode pumping can reduce the thermal lensing effect of Nd:YAG and the thermic unsteadiness of laser greatly.Simultaneously, because semiconductor laser diode pumping efficiency height, thereby saved energy consumption, dwindled the volume and weight of laser complete machine.
Thereupon, semiconductor laser diode array side pumped solid laser device and frequency double laser thereof have obtained development at full speed, and have obtained extensive use in various fields.But, though side pumped solid laser device and frequency double laser thereof can obtain big power output, difficultly obtain single-mode laser output, and the circulating water machine that need have a certain volume carries out water-cooled to the diode display, the a lot of application of order felt inconvenience, even hangs back.
Summary of the invention
The purpose of this utility model is in order to overcome the defective of above-mentioned prior art, a kind of wind cooled, single mold green light laser of pumped at end face of semiconductor to be provided.The output wavelength of this laser is the 532nm green glow, and continuous wave operation pattern average output power reaches 4 watts, beam quality factor M
2≤ 1.1, TEM
00Single transverse mode is exported, complete machine is air-cooled, volume is small and exquisite, is particularly suitable for application such as therapeutic instrument for ophthalmology, laser eyepiece illumination, laser marking, engraving and laser performance.
Technical solution of the present utility model is as follows:
A kind of wind cooled, single mold green light laser of pumped at end face of semiconductor is characterized in that comprising:
The continuous wave laser diode that driving power and output coupled fiber are arranged;
The shaping optical system of forming by first planoconvex spotlight and second planoconvex spotlight;
By one 45 ° of catadioptric formula resonant cavitys that concave surface concave-convex lens, planar lens and convex surface planoconvex lens is inwardly inwardly formed, the convex surface of described concave-convex lens plating 809nm anti-reflection film, 0 ° of concave surface plating, 1064nm high-reflecting film and 809nm high transmittance film; 0 ° of the convex surface plating of described planoconvex lens, 1064nm and 532nm high-reflecting film, described planar lens are an optical flat, one side is plated 45 °, 1064nm high-reflecting film and 532nm high transmittance film, another side plating 532nm anti-reflection film; Described planar lens is between described concave-convex lens and described planoconvex lens, these 45 ° catadioptric formula resonant cavitys are divided into two optical arms, described planoconvex lens, planar lens, concave-convex lens and place the laser medium between described concave-convex lens and the planar lens to form the 1064nm resonant cavity, described planoconvex lens and planar lens and place frequency-doubling crystal composition frequency doubling cavity between this two; The output of the output coupled fiber of described continuous wave laser diode is positioned at the front focus of described shaping optical system, and the back focus of this shaping optical system is among the described laser medium.
Laser outbound course at described planar lens also has a 532nm45 ° of catadioptric level crossing, transmission direction at these 45 ° of catadioptric level crossings is formed the detecting unit that a laser output power fluctuates by frosted glass plate and silicon photo diode, and the output of this silicon photo diode links to each other with described driving power through a feedback unit.
Described laser medium is Nd:YVO
4, or laser crystals such as Nd:YAG or Nd:YLF.
Described frequency-doubling crystal is LBO or ktp crystal.
Described laser diode and laser medium and frequency-doubling crystal are controlled temperature with the strictness of semiconductor heat electric controller.
Catadioptric outbound course at described level crossing also is provided with laser beam expander.
Under the driving of laser diode drive power, the pump light of the 809nm that diode laser matrix produces is by the output of output coupled fiber, focus on behind the shaping optical system via first planoconvex spotlight and second planoconvex spotlight composition among the described laser medium, producing wavelength is the perpendicular linear polarization laser first-harmonic of 1064nm, the frequency doubled light that forms 532nm through the frequency-doubling crystal frequency multiplication from planar lens through the catadioptric output of level crossing, the fluctuation of this output laser power detects and feeds back to described diode laser matrix driving power by the laser detection feedback unit, revise driving power in real time, make the fluctuation of laser output power become little.
Technique effect of the present utility model:
(1) the utility model has used a special concavo-convex resonant cavity, this cavity configuration is different from the cavity configuration of all these class commercial products so far, not only considers the thermal lensing effect of laser medium, and considers the thermal lensing effect of frequency-doubling crystal, so it is a bistable chamber, good stability.Even the displacement of generation ± 5mm between the preceding Effect of Back-Cavity Mirror also can guarantee the steady operation (see figure 5) of laser.
(2) generally speaking, the single mode (TEM of this class short cavity laser
00The waist size of mode volume mould) is all less than 1mm, and the waist size of single mode volume of the present utility model can be accomplished greater than 1mm.Like this, be controlled under the 0.8mm situation, just can strictness realize the perfect condition of single mode waist＞pump light waist, thereby guaranteed the high light beam quality factor M of output laser at waist diameter with pump light
2≤ 1.1 (see figure 5)s.
Description of drawings
Fig. 1 is the wind cooled, single mold green light laser structure principle chart of the utility model pumped at end face of semiconductor.
Among the figure: the 1-concave-convex lens 2-level crossing 3-planoconvex lens 4-level crossing 5-first planoconvex spotlight 6-second planoconvex spotlight 7-laser diode output coupled fiber 8-laser diode 9-laser diode drive power 10-laser output power feedback unit 11-LBO frequency-doubling crystal 12-frosted glass plate 13-silicon photo diode 14-beam expanding lens 15-laser medium 16-outgoing laser beam.
Fig. 2 is the change curve of 1064nm first-harmonic power output with laser diode current.
Fig. 3 is the change curve of 532nm green glow power output with laser diode current.
Fig. 4 is output laser stabilization linearity curve.
Fig. 5 is TEM00 mode diameter and beam quality factor M
2Change curve with the ante-chamber distance.
Embodiment
The utility model is described in further detail below in conjunction with embodiment and accompanying drawing, but should not limit protection range of the present utility model with this.
See also Fig. 1 earlier, Fig. 1 is the structure principle chart of the wind cooled, single mold green light laser specific embodiment of the utility model pumped at end face of semiconductor.As seen from the figure, the wind cooled, single mold green light laser of the utility model pumped at end face of semiconductor comprises:
Continuous wave laser diode 8 with driving power 9 and output coupled fiber 7;
The shaping optical system of forming by first planoconvex spotlight 5 and second planoconvex spotlight 6;
By-45 ° of catadioptric formula resonant cavitys that concave surface concave-convex lens 1, planar lens 2 and convex surface planoconvex lens 3 is inwardly inwardly formed, the convex surface of described concave-convex lens 1 plating 809nm anti-reflection film, 0 ° of concave surface plating, 1064nm high-reflecting film and 809nm high transmittance film; 0 ° of the convex surface plating of described planoconvex lens 3,1064nm and 532nm high-reflecting film, described planar lens 2 is an optical flat, one side is plated 45 °, 1064nm high-reflecting film and 532nm high transmittance film, another side plating 532nm anti-reflection film; Described planar lens 2 is between described concave-convex lens 1 and described planoconvex lens 3, these 45 ° catadioptric formula resonant cavitys are divided into two optical arms, described planoconvex lens 3, planar lens 2, concave-convex lens 1 and place the laser medium 15 between described concave-convex lens 1 and the planar lens 2 to form the 1064nm resonant cavitys, described planoconvex lens 3 and planar lens 2 and place frequency-doubling crystal 15 composition frequency doubling cavities between this two;
The output of the output coupled fiber 7 of described continuous wave laser diode 8 is positioned at the front focus of described shaping optical system, and the back focus of this shaping optical system is among the described laser medium 15.
Laser outbound course at described planar lens 2 also has a 532nm45 ° of catadioptric level crossing 4, transmission direction at these 45 ° of catadioptric level crossings 4 is formed the detecting unit that a laser output power fluctuates by frosted glass plate 12 and silicon photo diode 13, and the output of this silicon photo diode 13 links to each other with described driving power 9 through a feedback unit 10.
Described laser medium 15 is Nd:YVO
4Laser crystal such as laser crystal or Nd:YAG, Nd:YLF.
Described frequency-doubling crystal 11 is LBO or ktp crystal.
Described diode laser matrix 8 and laser medium 15 and frequency-doubling crystal 11 are all used the strict control of semiconductor heat electric controller temperature.
Catadioptric outbound course at described level crossing 4 also is provided with laser beam expander 14.
Under the driving of diode laser matrix driving power 9, the pump light of the 809nm that diode laser matrix 8 produces is by 7 outputs of output coupled fiber, focus in the end face of described laser medium 15, behind the shaping optical system via first planoconvex spotlight 5 and second planoconvex spotlight, 6 compositions Nd:YVO
4Carry out pumping, thereby producing wavelength is the perpendicular linear polarization laser first-harmonic of 1064nm, the frequency doubled light that forms 532nm through LBO frequency-doubling crystal 11 frequencys multiplication from planar lens 2 through level crossing 4 catadioptric outputs, the detecting unit that the power fluctuation of this output laser is formed a laser output power by frosted glass plate 12 and silicon photo diode 13 detects, feed back to described diode laser matrix driving power 9 through feedback unit 10, revise driving power in real time.
Enumerate the concrete parameter of the embodiment of this laser below:
Be to be 809nm with a centre wavelength, continuous wave output power reaches the optical fiber coupling output diode laser matrix of 30W, a shaping optical system of forming via two Φ, 30 first planoconvex spotlights 5 and second planoconvex spotlight 6 focuses on a Nd:YVO who places in-45 ° of catadioptric formula resonant cavitys being made up of concave surface concave-convex lens 1, planar lens 2 and convex surface planoconvex lens 3 inwardly inwardly with the pump light of 809nm
4In (neodymium-doped yttrium vanadate) laser medium, producing wavelength is the perpendicular linear polarization laser first-harmonic of 1064nm.Nd:YVO
4Volume be 4 * 4 * 10mm, the 809nm pump light enters Nd:YVO through orthopedic systems
4Minimum hot spot be 0.8mm.Described concave-convex lens, its convex surface plating 809nm anti-reflection film (AR809nm), 0 ° of 1064nm high-reflecting film of concave surface plating and 809nm high transmittance film (0 °, HR1064 and Hi809nm); Planar lens 2 is an one flat plate, and one side is plated the high anti-and 532nm high transmittance film (HR1064 and 532nm) of 45 ° of 1064nm, another side plating 532nm anti-reflection film (AR532nm); 0 ° of 1064nm of planoconvex lens 3 convex surfaces plating and 532nm high-reflecting film (HR1064 and 532nm).The LBO frequency-doubling crystal of in planar lens 2 and planoconvex lens 3 optical arms, inserting I class phase matched, make secondary through this crystal by Nd:YVO
4Two perpendicular linear polarization photon frequency doublings in the 1064nm first-harmonic that produces produce the 532nm photon of a horizontal linear polarization, and by level crossing 2 outputs.
Test shows:
(1) the utility model has used a special concavo-convex resonant cavity, this cavity configuration is different from the cavity configuration of all these class commercial products so far, not only considers the thermal lensing effect of laser medium, and considers the thermal lensing effect of frequency-doubling crystal, so it is a bistable chamber, good stability.Even the displacement of generation ± 5mm between the preceding Effect of Back-Cavity Mirror also can guarantee the steady operation of laser, referring to the result of Fig. 5.
(2) generally speaking, the single mode (TEM of this class short cavity laser
00The waist size of mode volume mould) is all less than 1mm, and the waist size of single mode volume of the present utility model can be accomplished greater than 1mm.Like this, be controlled under the 0.8mm situation, just can strictness realize the perfect condition of single mode waist＞pump light waist, thereby guaranteed the high light beam quality factor M of output laser at waist diameter with pump light
2≤ 1.1, referring to Fig. 5 result.
(3) output wavelength of the utility model laser is the 532nm green glow, and continuous wave operation pattern average output power reaches 4 watts, beam quality factor M
2≤ 1.1, TEM
00Single transverse mode is exported, complete machine is air-cooled, volume is small and exquisite, is particularly suitable for application such as therapeutic instrument for ophthalmology, laser eyepiece illumination, laser marking, engraving and laser performance.
Claims (5)
1, a kind of wind cooled, single mold green light laser of pumped at end face of semiconductor is characterized in that comprising:
Continuous wave laser diode (8) with driving power (9) and output coupled fiber (7);
The shaping optical system of forming by first planoconvex spotlight (5) and second planoconvex spotlight (6);
One 45 ° of catadioptric formula resonant cavitys forming by concave surface concave-convex lens (1), planar lens (2) and convex surface planoconvex lens (3) inwardly inwardly, the convex surface plating 809nm anti-reflection film of described concave-convex lens (1), 0 ° of 1064nm high-reflecting film of concave surface plating and 809nm high transmittance film; The 0 ° of 1064nm of convex surface plating and the 532nm high-reflecting film of described planoconvex lens (3), described planar lens (2) is an optical flat, one side is plated 45 ° of 1064nm high-reflecting films and 532nm high transmittance film, another side plating 532nm anti-reflection film; Described planar lens (2) is between described concave-convex lens (1) and described planoconvex lens (3), these 45 ° catadioptric formula resonant cavitys are divided into two optical arms, described planoconvex lens (3), planar lens (2), concave-convex lens (1) and place described concave-convex lens (1) and planar lens (2) between laser medium (15) form the 1064nm resonant cavity, described planoconvex lens (3) and planar lens (2) and place frequency-doubling crystal composition frequency doubling cavity between this two;
The output of the output coupled fiber (7) of described continuous wave laser diode (8) is positioned at the front focus of described shaping optical system, and the back focus of this shaping optical system is among the described laser medium (15).
2, the wind cooled, single mold green light laser of pumped at end face of semiconductor according to claim 1, it is characterized in that also having a 532nm45 ° of catadioptric level crossing (4) at the laser outbound course of described planar lens (2), transmission direction at these 45 ° of catadioptric level crossings (4) is formed the detecting unit that a laser output power fluctuates by frosted glass plate (12) and silicon photo diode (13), and the output of this silicon photo diode (13) links to each other with described driving power (9) through a feedback unit (10).
3, the wind cooled, single mold green light laser of pumped at end face of semiconductor according to claim 1 is characterized in that described laser medium (15) is Nd:YVO
4Laser crystal or Nd:YAG or Nd:YLF laser crystal.
4, the wind cooled, single mold green light laser of pumped at end face of semiconductor according to claim 1 is characterized in that described diode laser matrix (8) and laser medium (15) and frequency-doubling crystal (11) all use the semiconductor heat electric controller, strict control temperature.
5, the wind cooled, single mold green light laser of pumped at end face of semiconductor according to claim 2 is characterized in that also being provided with laser beam expander (14) at the catadioptric outbound course of described level crossing (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620041336 CN200953430Y (en) | 2006-04-26 | 2006-04-26 | Semiconductor end pumping air-cooling single-mode green-light laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620041336 CN200953430Y (en) | 2006-04-26 | 2006-04-26 | Semiconductor end pumping air-cooling single-mode green-light laser |
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| CN200953430Y true CN200953430Y (en) | 2007-09-26 |
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| CN 200620041336 Expired - Lifetime CN200953430Y (en) | 2006-04-26 | 2006-04-26 | Semiconductor end pumping air-cooling single-mode green-light laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100440648C (en) * | 2006-04-26 | 2008-12-03 | 上海致凯捷激光科技有限公司 | Wind cooled, single mold green light laser pumped at end face of semiconductor |
| CN102263362A (en) * | 2011-06-28 | 2011-11-30 | 武汉新特光电技术有限公司 | End-face pumping air-cooling laser |
| CN104253375A (en) * | 2014-06-26 | 2014-12-31 | 锐莱特精密光电技术无锡有限公司 | High-repetition frequency and narrow-pulse width single-mode green laser |
-
2006
- 2006-04-26 CN CN 200620041336 patent/CN200953430Y/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100440648C (en) * | 2006-04-26 | 2008-12-03 | 上海致凯捷激光科技有限公司 | Wind cooled, single mold green light laser pumped at end face of semiconductor |
| CN102263362A (en) * | 2011-06-28 | 2011-11-30 | 武汉新特光电技术有限公司 | End-face pumping air-cooling laser |
| CN104253375A (en) * | 2014-06-26 | 2014-12-31 | 锐莱特精密光电技术无锡有限公司 | High-repetition frequency and narrow-pulse width single-mode green laser |
| CN104253375B (en) * | 2014-06-26 | 2019-07-02 | 锐莱特精密光电技术无锡有限公司 | A kind of high repetition frequency narrow pulse width single-mode green light laser |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Effective date of abandoning: 20081203 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |