CN102263366A - All solid-state 579nm yellow Raman laser pumped by laser - Google Patents
All solid-state 579nm yellow Raman laser pumped by laser Download PDFInfo
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Abstract
The invention discloses an all solid-state 579nm yellow Raman laser pumped by a laser. A horizontal light path of incident plane 1064nm holophote are successively provided with a BBO electro-optic Q switch, a Brewster lens, a laser gain medium, a pulse LD side pump module, a 1064nm laser output mirror, a LBO frequency doubling crystal, a 45DEG C spectroscope, a Lambda/2 wave plate, a focusing lens, a 579nm yellow laser reflector, a KGW Raman crystal and a 579nm yellow laser output mirror. In the invention, many key technologies, such as a pulse semiconductor laser (LD) side pump polycrystal Nd: YAG ceramic rod, a BBO electro-optic Q-switched technology, synchronous delay pulse signal trigger, LBO-crystal outer cavity frequency doubling and the like, are adopted. 532nm green laser can be acquire, wherein peak value power generated by the green laser can reach 370 kW and a narrow pulse width is less than 15ns. The wave band laser is used to perform an end pump on the KGW Raman crystal so as to obtain the high peak power consisting of 1 kHz of repetition rate, around 10ns of pulse width, and over 200kW of the peak power and 579nm yellow Raman laser output of the narrow pulse width.
Description
Technical field
The present invention relates to all solid state 579nm gold-tinted Raman laser of a kind of high-peak power, narrow pulse width, belong to laser technology field.
Background technology
550nm-600nm yellow band laser has irreplaceable using value in fields such as medical treatment, demonstration, satellite guiding, undersea detections.The laser that produces this wave band at present has copper-vapor laser, dyestuff Yellow light laser, semiconductor laser, dual wavelength and frequency laser.Copper-vapor laser complex structure, conversion efficiency are low, in order to obtain copper steam, must adopt electric calorifie installation that copper is heated to the temperature of 1500 ° of C, must use energy high temperature resistant and have the alumina material of good vacuum tight performance to do shell, and outside it around on heating wire come metal in the heating tube.This laser works temperature is quite high, exists serious technological problems.Dyestuff Yellow light laser power is low, poor stability, dyestuff is poisonous and shortcoming such as easy degeneration, energy consumption height, unstable properties, laser circulating cooling system complexity has restricted its development.Semiconductor laser can produce the laser of any wavelength in the 477nm-600nm wave band in theory, but for each target wavelength, semiconductive luminescent materials all will pass through special design, and is with high costs.Dual wavelength and frequency laser aspect, mainly be utilize nonlinear crystal in resonant cavity to 1.06 μ m of neodymium-doped operation material and 1.31 μ m spectral lines with produce near the 590nm spectral line frequently, output wavelength is single, and power output and conversion efficiency are lower, are of limited application.
Summary of the invention
The object of the present invention is to provide all solid state 579nm gold-tinted Raman laser of a kind of high-peak power, narrow pulse width, the present invention adopts the 532nm green laser end pumping KGW Raman crystal experimental program of external Raman resonant cavity type and high-peak power, narrow pulse width, and the 532nm green laser obtains about pulse repetition frequency 1kHz, pulse duration 10ns after through KGW Raman crystal Raman frequency shift, the high-peak power that peak power surpasses 200kW, the yellow raman laser output of 579nm of narrow pulse width.The present invention has that volume is little, efficient is high, the advantage of compact conformation, work safety, has overcome the deficiencies in the prior art.
Realize that technical scheme of the present invention is to solve like this:
A kind of 579nm gold-tinted Raman laser of all solid state laser pumping is disposed with the electric-optically Q-switched switch of bbo crystal (2), Brewster mirror (3), gain medium (4), pulse LD side pumping module (5), 1064nm laser output mirror (7), LBO frequency-doubling crystal (8), 45 ° of spectroscopes (9), λ/2 wave plates (10), condenser lens (11), 579nm gold-tinted laser mirror (12), KGW Raman crystal (13) and 579nm gold-tinted laser output mirror (14) on the horizontal optical path of its plane of incidence 1064nm completely reflecting mirror (1); Synchronization delay pulse signal generator (6) provides the delayed trigger signal to the power supply of pulse LD side pumping module (5) and the driving power of the electric-optically Q-switched switch of bbo crystal (2).
The electric-optically Q-switched switch of described bbo crystal (2) uses the BBO electrooptic crystal, and repetition rate is adjustable continuously between 1Hz-1000Hz.
Described gain medium (4) is a polycrystalline Nd:YAG ceramic rod, and the diameter of rod is 3mm, and the length of rod is 65mm.
Described pulse LD side pumping module (5) is a pulse 808nm semiconductor laser three-dimensional pump module, and pulse recurrence rate is adjustable in the 1-1000Hz scope.
Described 1064nm laser output mirror (7) is at the transmitance T=40% of 1064nm fundamental frequency light.
Described LBO frequency-doubling crystal (8) is an I class angular phase coupling lbo crystal, and crystal is put into water-cooled scattering aluminium block after wrapping up with indium foil.
Described 579nm gold-tinted laser mirror (12) is level crossing, and is anti-reflection to 532nm, high anti-to 555nm, 579nm, T〉90%532nm ﹠amp; R〉97%555nm ﹠amp; R〉97%579nm.
Described KGW Raman crystal (13) crystalline size is 4 * 4 * 40mm
3, crystal is along the cutting of b axle, and two optics end faces of crystal are coated with the 450nm-650nm anti-reflection film, and crystal is put into water-cooled scattering aluminium block after wrapping up with indium foil.
Described 579nm gold-tinted outgoing mirror (14) is a level crossing, and is high anti-to 532nm, 555nm, to the transmission of 579nm part, R〉99.5%532nm ﹠amp; R〉97%555nm ﹠amp; T〉50%579nm.
The 579nm gold-tinted Raman laser of above-mentioned all solid state laser pumping produces laser means, may further comprise the steps:
1) behind the 808nm semiconductor laser energy that gain medium (4) absorption pulse LD side pumping module (5) provides, produce the excited fluorescence radiation, amplify the back in the resonant cavity that the optical element of the fluorescence of radiation between plane completely reflecting mirror (1) and 1064nm laser output mirror (7) constitutes and form stable 1064nm pulse fundamental frequency light generation;
2) provide pulse signal by synchronization delay pulse signal generator (6) to the power supply of pulse LD side pumping module (5) and the driving power of the electric-optically Q-switched switch of bbo crystal (2), by regulating the delay triggered time of two signals, guarantee that LD emission 808nm pulse pump light and bbo crystal move back the pressure precise synchronization, obtain repetition rate and export at the 1064nm of 1-1000Hz, narrow pulse width pulse laser;
3) 1064nm fundamental frequency light is exported by 1064nm laser output mirror (7) coupling, and single is changed to the frequency multiplication green glow of 532nm through the quadratic nonlinearity frequency inverted of LBO frequency-doubling crystal (8); Unconverted 1064nm fundamental frequency light and 532nm frequency doubled light are propagated along light path, behind 45 ° of spectroscopes (9), 1064nm fundamental frequency light is reflected, propagate along the vertical optical axis direction, the transmission of 532nm frequency multiplication green glow, still propagate, and, finally arrive 579nm gold-tinted output end mirror (14) successively by λ/2 wave plates (10), condenser lens (11), 579nm gold-tinted laser mirror (12), KGW Raman crystal (13) along optical axis;
4) focus after the frequency doubled light line focus lens (11) of 532nm focus on is positioned near the center of KGW Raman crystal (13), when near the peak power density the focus reaches the single order stokes light stimulated Raman scattering threshold value of KGW Raman crystal (11), the frequency doubled light of 532nm produces Raman frequency shift rapidly, obtains the single order Stokes gold-tinted of 555nm; 555nm single order Stokes gold-tinted is vibration and accumulation energy in the Raman resonant cavity that is made of 579nm gold-tinted laser mirror (12), KGW Raman crystal (13) and 579nm gold-tinted laser output mirror (14), when near the peak power density of single order Stokes gold-tinted focus reaches the threshold value that the second order of Stokes light of KGW crystal produces, the Raman cascading takes place, the single order stokes light of 555nm is converted into the second order of Stokes gold-tinted of 579nm rapidly, and 579nm second order of Stokes gold-tinted laser is through 579nm gold-tinted laser output mirror (14) coupling output.
Advantage of the present invention and good effect: (1) adopts pulse semiconductor laser (LD) profile pump polycrystalline Nd:YAG ceramic rod, bbo crystal is electric-optically Q-switched, the synchronization delay pulse signal triggers, key technologies such as lbo crystal cavity external frequency multiplication, obtained the generation peak power up to 370kW, narrow pulse width is less than the 532nm green laser of 15ns, utilize this wave band of laser end pumping KGW Raman crystal, thereby can obtain repetition rate 1kHz, about pulse duration 10ns, peak power surpasses the high-peak power of 200kW, the yellow raman laser output of the 579nm of narrow pulse width; (2) adopt the straight type Raman of exocoel resonator design.Stimulated Raman scattering process (SRS) is independently being carried out in the Raman resonant cavity, the SRS inelastic scattering causes that the thermal lensing effect of Raman crystal can not impact the output stability of 1064nm fundamental frequency optical cavity, and the thermal effect of gain medium also can not influence the output stability of Raman resonant cavity.Independently the Raman resonant cavity is more flexible, can combine with existing 532nm green (light) laser by optical coupling system, and need not do any change to pump laser; (3) 532nm laser end pumping KGW crystal.532nm laser is the polarization frequency doubled light, adopts this wavelength laser to avoid the insertion loss of using extra polarizing component to introduce, pumping efficiency height as pump light.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Embodiment
The invention will be further described below in conjunction with Fig. 1.
Shown in accompanying drawing 1, be disposed with the electric-optically Q-switched switch of bbo crystal (2), Brewster mirror (3), gain medium (4), pulse LD side pumping module (5), synchronization delay pulse signal generator (6), 1064nm outgoing mirror (7), LBO frequency-doubling crystal (8), 45 ° of spectroscopes (9), λ/2 wave plates (10), condenser lens (11), 579nm gold-tinted laser mirror (12), KGW Raman crystal (13), 579nm gold-tinted laser output mirror (14) on the horizontal optical path of plane of incidence 1064nm completely reflecting mirror (1).
1064nm completely reflecting mirror (1) is high anti-to 1064nm fundamental frequency light, R〉99.8%1064nm;
The electric-optically Q-switched switch of bbo crystal (2) uses 4 * 4 * 12mm
3The BBO electrooptic crystal, for moving back the pressure working method, λ/4 wave voltages (1064nm) are 3.4 ± 0.2 KV, trailing edge f＜10ns, time-delay is adjustable continuously in 30 μ s-300 μ s scopes, repetition rate is adjustable continuously between 1Hz-1000Hz, and two logical light end faces of bbo crystal all are coated with 1064nm fundamental frequency light p-polarization high transmittance film simultaneously;
Brewster mirror (3) places between electric-optically Q-switched switch of bbo crystal (2) and the pulse LD side pumping module (5), and the angle between the logical optical axis of minute surface and resonant cavity is 33.7 °, and two minute surfaces all are coated with 1064nm anti-reflection film, T〉99.8%1064nm;
Gain medium (4) is a polycrystalline Nd:YAG ceramic rod, and the diameter of rod is 3mm, and the length of rod is 65mm, and two end faces of rod all are coated with 1064nm anti-reflection film, T〉99.8%1064nm;
Pulse LD side pumping module (5) is pulse 808nm semiconductor laser (LD) three-dimensional pump module, and adjacent two LD array angles are 120 °, and pulse recurrence rate is adjustable in the 1-1000Hz scope;
Synchronization delay pulse signal generator (6) provides pulse signal to the power supply of pulse LD side pumping module (5) and the driving power of the electric-optically Q-switched switch of bbo crystal (2), by regulating the delay triggered time of two signals, guarantee that LD emission 808nm pulse pump light and bbo crystal move back the pressure precise synchronization;
1064nm outgoing mirror (7) is T=40%1064nm to the transmitance of 1064nm fundamental frequency light;
LBO frequency-doubling crystal (8) is an I class angular phase coupling lbo crystal, and crystalline size is 4 * 4 * 12mm
3, two logical light end faces of crystal are coated with 1064nm and 532nm anti-reflection film, T〉and 99.5%1064nm ﹠amp; T〉97%532nm, crystal is put into water-cooled scattering aluminium block after wrapping up with indium foil;
45 ° of spectroscopes (9) are high anti-to 1064nm, and are high saturating to 532nm, R〉95%45 ° of 1064nm ﹠amp; T〉95%45 ° of 532nm;
λ/2 wave plates (10) are high saturating to 532nm, T〉95%532nm;
The focal length of condenser lens (11)
f=100mm, and high saturating to 532nm, T〉99.8%532nm;
579nm gold-tinted laser mirror (12) is level crossing, and is anti-reflection to 532nm, high anti-to 555nm, 579nm, T〉90%532nm ﹠amp; R〉97%555nm ﹠amp; R〉97%579nm;
KGW Raman crystal (13) is of a size of 4 * 4 * 40mm
3, crystal is along the cutting of b axle, and two optics end faces of crystal are coated with the 450nm-650nm anti-reflection film, and crystal is put into water-cooled scattering aluminium block after wrapping up with indium foil;
579nm gold-tinted outgoing mirror (14) is a level crossing, and is high anti-to 532nm, 555nm, to the transmission of 579nm part, R〉99.5%532nm ﹠amp; R〉97%555nm ﹠amp; T〉50%579nm.
The course of work:
Behind the energy that gain medium (4) absorption pulse LD side pumping module (5) provides, produce the radiation of 1064nm excited fluorescence, vibration is amplified the back and is formed stable 1064nm fundamental frequency light in the resonant cavity that the fluorescence of radiation constitutes between 1064nm plane completely reflecting mirror (1) and 1064nm laser output mirror (7).Synchronization delay pulse signal generator (6) provides pulse signal to the power supply of pulse LD side pumping module (5) and the driving power of the electric-optically Q-switched switch of bbo crystal (2) simultaneously, by regulating the delay triggered time of two signals, guarantee that LD emission 808nm pulse pump light and bbo crystal move back the pressure precise synchronization;
1064nm fundamental frequency light single is through LBO frequency-doubling crystal (8), through the quadratic nonlinearity frequency change of LBO frequency-doubling crystal, produces peak power up to 370kW, the narrow pulse width 532nm frequency doubled light less than 15ns; Behind 1064nm fundamental frequency light and the 532nm frequency doubled light outgoing LBO frequency-doubling crystal (8), during through 45 ° of spectroscopes (9), 1064nm fundamental frequency light is reflected, propagate along the vertical optical axis direction, the 532nm frequency doubled light is by transmission, still propagate, and, finally arrive 579nm gold-tinted laser output mirror (14) successively by λ/2 wave plates (10), condenser lens (11), 579nm gold-tinted laser mirror (12), KGW Raman crystal (13) along optical axis; The 532nm frequency doubled light of high-peak power, narrow pulse width is by end pumping (focus is positioned near the Raman crystal center) in the KGW Raman crystal (13), when near the peak power density the focus reached the single order stimulated Raman scattering threshold value of KGW crystal (13), the rapid Raman frequency shift of the frequency doubled light of 532nm was changed to the single order stokes light of 555nm; Vibration and accumulation energy in the Raman resonant cavity that 555nm single order stokes light constitutes between by 579nm gold-tinted laser mirror and 579nm gold-tinted laser output mirror, when the 555nm single order that accumulates in the Raman resonant cavity is excited second order that the peak power density of stokes light reaches KGW Raman crystal (13) when being excited threshold value that stokes light produces, the Raman cascading takes place, the single order stokes light of 555nm is converted into the second order of Stokes light of 579nm rapidly, and second order of Stokes light is through outside 579nm gold-tinted outgoing mirror (14) output cavity;
When the power supply pumping current of pulse LD side pumping module (5) is 60A, when repetition rate is 1kHz, has obtained the maximum average output power of 579nm gold-tinted laser and reached 2.1W, pulse duration is that 10.3ns, peak power surpass 200kW.
Claims (10)
1. the 579nm gold-tinted Raman laser of an all solid state laser pumping, it is characterized in that, be disposed with the electric-optically Q-switched switch of bbo crystal (2) on the horizontal optical path of plane of incidence 1064nm completely reflecting mirror (1), Brewster mirror (3), gain medium (4), pulse LD side pumping module (5), 1064nm laser output mirror (7), LBO frequency-doubling crystal (8), 45 ° of spectroscopes (9), λ/2 wave plates (10), condenser lens (11), 579nm gold-tinted laser mirror (12), KGW Raman crystal (13) and 579nm gold-tinted laser output mirror (14); Synchronization delay pulse signal generator (6) provides the delayed trigger signal to the power supply of pulse LD side pumping module (5) and the driving power of the electric-optically Q-switched switch of bbo crystal (2).
2. according to the 579nm gold-tinted Raman laser of claims 1 described all solid state laser pumping, it is characterized in that the electric-optically Q-switched switch of bbo crystal (2) uses the BBO electrooptic crystal, repetition rate is adjustable continuously between 1Hz-1000Hz.
3. according to the 579nm gold-tinted Raman laser of claims 1 described all solid state laser pumping, it is characterized in that gain medium (4) is a polycrystalline Nd:YAG ceramic rod, the diameter of rod is 3mm, and the length of rod is 65mm.
4. according to the 579nm gold-tinted Raman laser of claims 1 described all solid state laser pumping, it is characterized in that, pulse LD side pumping module (5) is a pulse 808nm semiconductor laser three-dimensional pump module, and pulse recurrence rate is adjustable in the 1-1000Hz scope.
5. according to the 579nm gold-tinted Raman laser of claims 1 described all solid state laser pumping, it is characterized in that 1064nm laser output mirror (7) is at the transmitance T=40% of 1064nm fundamental frequency light.
6. according to the gold-tinted Raman laser of claims 1 described all solid state laser pumping, it is characterized in that LBO frequency-doubling crystal (8) is an I class angular phase coupling lbo crystal, crystal is put into water-cooled scattering aluminium block after wrapping up with indium foil.
7. according to the 579nm gold-tinted Raman laser of claims 1 described all solid state laser pumping, it is characterized in that 579nm gold-tinted laser mirror (12) is level crossing, and is anti-reflection to 532nm, high anti-to 555nm, 579nm, T〉90%532nm ﹠amp; R〉97%555nm ﹠amp; R〉97%579nm.
8. according to the 579nm gold-tinted Raman laser of claims 1 described all solid state laser pumping, it is characterized in that KGW Raman crystal (13) crystalline size is 4 * 4 * 40mm
3, crystal is along the cutting of b axle, and two optics end faces of crystal are coated with the 450nm-650nm anti-reflection film, and crystal is put into water-cooled scattering aluminium block after wrapping up with indium foil.
9. according to the 579nm gold-tinted Raman laser of claims 1 described all solid state laser pumping, it is characterized in that 579nm gold-tinted outgoing mirror (14) is a level crossing, high anti-to 532nm, 555nm, to the transmission of 579nm part, R〉99.5%532nm ﹠amp; R〉97%555nm ﹠amp; T〉50%579nm.
10. the 579nm gold-tinted Raman laser of claims 1 described all solid state laser pumping produces laser means, may further comprise the steps:
1) behind the 808nm semiconductor laser energy that gain medium (4) absorption pulse LD side pumping module (5) provides, produce the excited fluorescence radiation, amplify the back in the resonant cavity that the optical element of the fluorescence of radiation between plane completely reflecting mirror (1) and 1064nm laser output mirror (7) constitutes and form stable 1064nm pulse fundamental frequency light generation;
2) provide pulse signal by synchronization delay pulse signal generator (6) to the power supply of pulse LD side pumping module (5) and the driving power of the electric-optically Q-switched switch of bbo crystal (2), by regulating the delay triggered time of two signals, guarantee that LD emission 808nm pulse pump light and bbo crystal move back the pressure precise synchronization, obtain repetition rate and export at the 1064nm of 1-1000Hz, narrow pulse width pulse laser;
3) 1064nm fundamental frequency light is exported by 1064nm laser output mirror (7) coupling, and single is changed to the frequency multiplication green glow of 532nm through the quadratic nonlinearity frequency inverted of LBO frequency-doubling crystal (8); Unconverted 1064nm fundamental frequency light and 532nm frequency doubled light are propagated along light path, behind 45 ° of spectroscopes (9), 1064nm fundamental frequency light is reflected, propagate along the vertical optical axis direction, the transmission of 532nm frequency multiplication green glow, still propagate, and, finally arrive 579nm gold-tinted output end mirror (14) successively by λ/2 wave plates (10), condenser lens (11), 579nm gold-tinted laser mirror (12), KGW Raman crystal (13) along optical axis;
4) focus after the frequency doubled light line focus lens (11) of 532nm focus on is positioned near the center of KGW Raman crystal (13), when near the peak power density the focus reaches the single order stokes light stimulated Raman scattering threshold value of KGW Raman crystal (11), the frequency doubled light of 532nm produces Raman frequency shift rapidly, obtains the single order Stokes gold-tinted of 555nm; 555nm single order Stokes gold-tinted is vibration and accumulation energy in the Raman resonant cavity that is made of 579nm gold-tinted laser mirror (12), KGW Raman crystal (13) and 579nm gold-tinted laser output mirror (14), when near the peak power density of single order Stokes gold-tinted focus reaches the threshold value that the second order of Stokes light of KGW crystal produces, the Raman cascading takes place, the single order stokes light of 555nm is converted into the second order of Stokes gold-tinted of 579nm rapidly, and 579nm second order of Stokes gold-tinted laser is through 579nm gold-tinted laser output mirror (14) coupling output.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102646920A (en) * | 2012-04-05 | 2012-08-22 | 中国科学院上海光学精密机械研究所 | Intracavity-frequency-doubling 532nm single-longitudinal-mode laser based on seed light injection |
| CN102723660A (en) * | 2012-05-02 | 2012-10-10 | 清华大学 | Electro-optic Q-switched pulse laser device with repeat frequency being variable in wide range |
| CN105226498A (en) * | 2015-11-07 | 2016-01-06 | 山东大学 | A kind of dual laser based on two stimulated Raman scattering medium |
| CN106898935A (en) * | 2017-03-24 | 2017-06-27 | 北京理工大学 | A kind of radio frequency intensity modulated green glow realizes system and tuning methods |
| CN109286127A (en) * | 2018-12-14 | 2019-01-29 | 烟台大学 | High-power 577nm-579nm solid Roman Yellow light laser |
| CN110752503A (en) * | 2019-05-09 | 2020-02-04 | 长春理工大学 | Single longitudinal mode and non-single longitudinal mode double-pulse laser alternate Q-switching output method and laser |
| CN110752502A (en) * | 2019-05-09 | 2020-02-04 | 长春理工大学 | Single-longitudinal-mode and non-single-longitudinal-mode dual-wavelength laser alternate Q-switching output method and laser |
| CN110994339A (en) * | 2019-12-06 | 2020-04-10 | 山东省科学院激光研究所 | Wide-tuning narrow-linewidth all-solid-state Raman laser |
| CN112636145A (en) * | 2020-12-24 | 2021-04-09 | 北京遥测技术研究所 | Injection locking method for satellite-borne high-energy narrow-pulse-width single-frequency laser |
| CN113982807A (en) * | 2021-10-27 | 2022-01-28 | 中北大学 | High-power self-inspection laser multipoint ignition system |
| CN114256729A (en) * | 2020-09-22 | 2022-03-29 | 中国科学院大连化学物理研究所 | Intermediate infrared Raman laser with narrow pulse width, high peak power and high average power |
| CN114498278A (en) * | 2021-12-30 | 2022-05-13 | 深圳半岛医疗有限公司 | Medical laser and laser system |
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| CN102646920A (en) * | 2012-04-05 | 2012-08-22 | 中国科学院上海光学精密机械研究所 | Intracavity-frequency-doubling 532nm single-longitudinal-mode laser based on seed light injection |
| CN102723660A (en) * | 2012-05-02 | 2012-10-10 | 清华大学 | Electro-optic Q-switched pulse laser device with repeat frequency being variable in wide range |
| CN102723660B (en) * | 2012-05-02 | 2014-11-26 | 清华大学 | Electro-optic Q-switched pulse laser device with repeat frequency being variable in wide range |
| CN105226498A (en) * | 2015-11-07 | 2016-01-06 | 山东大学 | A kind of dual laser based on two stimulated Raman scattering medium |
| CN106898935A (en) * | 2017-03-24 | 2017-06-27 | 北京理工大学 | A kind of radio frequency intensity modulated green glow realizes system and tuning methods |
| CN109286127A (en) * | 2018-12-14 | 2019-01-29 | 烟台大学 | High-power 577nm-579nm solid Roman Yellow light laser |
| CN110752503A (en) * | 2019-05-09 | 2020-02-04 | 长春理工大学 | Single longitudinal mode and non-single longitudinal mode double-pulse laser alternate Q-switching output method and laser |
| CN110752502A (en) * | 2019-05-09 | 2020-02-04 | 长春理工大学 | Single-longitudinal-mode and non-single-longitudinal-mode dual-wavelength laser alternate Q-switching output method and laser |
| CN110994339A (en) * | 2019-12-06 | 2020-04-10 | 山东省科学院激光研究所 | Wide-tuning narrow-linewidth all-solid-state Raman laser |
| CN114256729A (en) * | 2020-09-22 | 2022-03-29 | 中国科学院大连化学物理研究所 | Intermediate infrared Raman laser with narrow pulse width, high peak power and high average power |
| CN114256729B (en) * | 2020-09-22 | 2024-04-09 | 中国科学院大连化学物理研究所 | Mid-infrared Raman laser with narrow pulse width, high peak power and high average power |
| CN112636145A (en) * | 2020-12-24 | 2021-04-09 | 北京遥测技术研究所 | Injection locking method for satellite-borne high-energy narrow-pulse-width single-frequency laser |
| CN113982807A (en) * | 2021-10-27 | 2022-01-28 | 中北大学 | High-power self-inspection laser multipoint ignition system |
| CN114498278A (en) * | 2021-12-30 | 2022-05-13 | 深圳半岛医疗有限公司 | Medical laser and laser system |
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Application publication date: 20111130 |