CN114498278A - Medical laser and laser system - Google Patents
Medical laser and laser system Download PDFInfo
- Publication number
- CN114498278A CN114498278A CN202111656431.XA CN202111656431A CN114498278A CN 114498278 A CN114498278 A CN 114498278A CN 202111656431 A CN202111656431 A CN 202111656431A CN 114498278 A CN114498278 A CN 114498278A
- Authority
- CN
- China
- Prior art keywords
- laser
- frequency doubling
- pulse width
- medical
- width compression
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 88
- 230000006835 compression Effects 0.000 claims abstract description 60
- 238000007906 compression Methods 0.000 claims abstract description 60
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 52
- 239000010980 sapphire Substances 0.000 claims abstract description 52
- 230000008878 coupling Effects 0.000 claims description 49
- 238000010168 coupling process Methods 0.000 claims description 49
- 238000005859 coupling reaction Methods 0.000 claims description 49
- 230000005540 biological transmission Effects 0.000 claims description 31
- 230000003321 amplification Effects 0.000 claims description 19
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 19
- 238000011282 treatment Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 description 10
- 238000005086 pumping Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- WYOHGPUPVHHUGO-UHFFFAOYSA-K potassium;oxygen(2-);titanium(4+);phosphate Chemical compound [O-2].[K+].[Ti+4].[O-]P([O-])([O-])=O WYOHGPUPVHHUGO-UHFFFAOYSA-K 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000003351 Melanosis Diseases 0.000 description 1
- 101100456571 Mus musculus Med12 gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 210000002540 macrophage Anatomy 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000037311 normal skin Effects 0.000 description 1
- 231100000915 pathological change Toxicity 0.000 description 1
- 230000036285 pathological change Effects 0.000 description 1
- 230000008733 trauma Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
- H01S3/1625—Solid materials characterised by an active (lasing) ion transition metal titanium
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
- A61B18/18—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves
- A61B18/20—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves using laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1631—Solid materials characterised by a crystal matrix aluminate
- H01S3/1636—Al2O3 (Sapphire)
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
- A61B2018/00315—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body for treatment of particular body parts
- A61B2018/00452—Skin
- A61B2018/00458—Deeper parts of the skin, e.g. treatment of vascular disorders or port wine stains
Abstract
The invention relates to the technical field of medical equipment, in particular to a medical laser and a laser system. The invention provides a medical laser, which comprises a laser generating device, a frequency doubling device and a pulse width compression device, wherein the frequency doubling device is connected with the pulse width compression device; the laser generating device is used for outputting 1064nm Q-switched laser and is arranged on a laser light path; the frequency doubling device is arranged at the output end of the laser generating device and is used for outputting 532nm Q-switched laser; the pulse width compression device is arranged at the output end of the frequency doubling device and used for generating picosecond laser of 660nm-800nm, and the pulse width compression device comprises a lambda/2 wave plate, a holophote, an output mirror and a titanium-doped sapphire crystal. The medical laser provided by the invention can realize the output of the 660-plus 800nm wave band picosecond laser, and has the advantages of large output energy, good spot quality, stable output and long service life.
Description
Technical Field
The invention relates to the technical field of medical equipment, in particular to a medical laser and a laser system.
Background
The high incidence of color spots and the lack of ideal treatment are always the great difficult problems of skin cosmetology, and laser treatment provides an ideal treatment method for the color spots. Laser speckle removal is different from the traditional chemical or physical stripping method, and adopts a mode of causing less skin trauma to radically remove speckles, so that the laser speckle removal is safer and has better effect. The laser with specific wavelength can selectively act on different skin tissues without influencing normal skin tissues. The laser energy can be absorbed by pigment particles in pathological changes in a very short time to generate a very high temperature, so that the pigment particles are rapidly expanded to form micro blasting, generate vaporization and are crushed into very small particles, and then the particles are phagocytized and removed by macrophages in tissues.
The laser used for removing the spots generally comprises Q-switched laser and picosecond laser, and the wavelengths of the Q-switched laser and the picosecond laser comprise 1064nm, 532nm, 595nm, 660nm, 730nm, 755nm, 780nm and the like. Picosecond lasers are increasingly favored because of their shorter pulse widths, higher peak powers, and lower risk of treatment side effects. The main technical route of the existing picosecond freckle removing medical laser comprises the following steps: compressing the pulse width through a high-speed optical switch, compressing the pulse width through an SBS dye box, performing a MOPA structure picosecond seed light amplification technology and the like; in the above picosecond medical laser scheme, laser light with two wavelengths of 1064nm and 532nm or laser light with a single wavelength of 755nm is mostly output. Even if a few lasers with multiple wavelengths (3 wavelengths or more) exist, lasers with wavelengths beyond 1064nm and 532nm are generated by externally connecting a treatment handle internally provided with a dye rod or a titanium-doped sapphire crystal, and the defects of low energy, short service life, poor light spot quality, unstable output and the like exist.
Disclosure of Invention
The invention mainly aims to provide a medical laser, aiming at adjusting the wavelength of picosecond laser output by the medical laser so as to meet the clinical requirements on different wavelengths.
To achieve the above object, the present invention provides a medical laser including:
the laser generating device is used for outputting 1064nm Q-switched laser and is arranged on a laser light path;
the frequency doubling device is arranged at the output end of the laser generating device and is used for outputting 532nm Q-switched laser;
the pulse width compression device is arranged at the output end of the frequency doubling device and used for outputting 660nm-800nm picosecond laser, the pulse width compression device comprises a lambda/2 wave plate, a holophote, an output mirror and a titanium-doped sapphire crystal, and the lambda/2 wave plate, the holophote, the titanium-doped sapphire crystal and the output mirror are sequentially arranged at the output end of the frequency doubling device.
In one embodiment, the laser system further comprises a second actuator, the second actuator is connected to the frequency doubling device, and the second actuator is used for controlling the frequency doubling device to move into or out of the laser optical path.
In one embodiment, the laser further comprises a first actuator connected to the pulse width compression device, wherein the first actuator is used for controlling the pulse width compression device to move into or out of the laser optical path.
In an embodiment, the laser amplification device further comprises a laser amplification stage, the laser amplification stage is arranged between the laser generation device and the frequency doubling device, and the laser amplification stage is arranged on a laser light path.
In an embodiment, the frequency doubling device sequentially comprises a first coupling device, a frequency doubling crystal and a first laser separator, and the first laser separator is used for separating the 1064nm and 532nm Q-switched lasers.
In an embodiment, a 1064nm high-threshold antireflection dielectric film is plated on a surface of the frequency doubling crystal close to the first coupling device, and 1064nm and 532nm high-threshold antireflection dielectric films are plated on a surface of the frequency doubling crystal far from the first coupling device.
In an embodiment, the frequency doubling crystal further comprises a temperature control device, and the temperature control device is used for controlling the temperature of the frequency doubling crystal.
In an embodiment, the pulse width compression device further includes a second coupling device disposed between the λ/2 wave plate and the ti-doped sapphire, and a second laser splitter disposed at an output end of the output mirror, the second laser splitter being configured to split the pump light and the picosecond laser light.
In one embodiment, the laser pulse compression device further comprises a reflector for reflecting and outputting the laser generated by the pulse width compression device.
The invention also provides a laser system which comprises the medical laser, and further comprises a laser transmission device and a treatment device which are sequentially arranged outside the medical laser, wherein the laser transmission device and the treatment device are arranged on a laser light path.
According to the technical scheme, the titanium-doped sapphire crystal is introduced into the medical laser, so that the Q-switched laser is converted into picosecond laser. The purpose of compressing the pulse width of the Q-switched laser into picosecond laser is achieved by utilizing the capacity of producing ultrashort pulse, high-gain and high-power laser by using the titanium-doped sapphire crystal, in the process, the laser generating device and the frequency doubling device act together to output 532nm of Q-switched laser, the 532nm of Q-switched laser serves as a pump light source of the titanium-doped sapphire crystal, and the titanium-doped sapphire crystal can efficiently convert the 532nm of Q-switched laser into 660nm-800nm of picosecond laser. The medical laser provided by the invention has the following advantages: the output of 660-800nm wave band picosecond laser can be realized, and the requirements of clinic on different wavelengths and different pulse width modes can be met; the output energy is large, the light spot quality is good, the output is stable, and the service life is long; low cost, simple structure and mature scheme.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the embodiments or technical solutions of the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic diagram of a laser system according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another embodiment of the present invention.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 100 | |
10 | |
| 20 | |
21 | |
| 22 | |
30 | |
| 31 | |
32 | Frequency |
| 33 | |
40 | Pulse |
| 41 | Lambda/2 wave plate | 42 | |
| 43 | |
44 | Titanium doped |
| 45 | |
46 | |
| 47 | |
50 | |
| 60 | |
70 | |
| 80 | |
90 | Treatment device |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative positional relationship between the components, the movement situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, the meaning of "and/or" appearing throughout is to include three juxtapositions, exemplified by "A and/or B," including either the A or B arrangement, or both A and B satisfied arrangement. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The present invention proposes a medical laser 100.
Referring to fig. 1, in an embodiment, the medical laser 100 includes a laser generator 10, a frequency multiplier 30, a pulse width compressor 40, and a reflector 70. The frequency doubling device 30 sequentially comprises a first coupling device 31, a frequency doubling crystal 32 and a first laser separator 33, and the pulse width compression device 40 sequentially comprises a lambda/2 wave plate 41, a second coupling device 42, a total reflection mirror 43, a titanium-doped sapphire crystal 44, an output mirror 45 and a second laser separator 46.
Specifically, the laser generating device 10 outputs 1064nm Q-switched laser with repetition frequency of 1-10HZ, maximum energy of 1.0J and pulse width of 3-10 ns. The frequency doubling crystal 32 is a potassium titanyl phosphate crystal with high cost performance, and the size is 5mm multiplied by 6 mm-10mm multiplied by 8 mm; the surface of the frequency doubling crystal 32 close to the laser generating device 10 is plated with a high-threshold 1064nm antireflection dielectric film, and the surface of the frequency doubling crystal 32 far from the laser generating device 10 is plated with high-threshold 1064nm and 532nm antireflection dielectric films. The first coupling device 31 is a focusing lens with a focal length of 50 mm-200 mm, and the center of the frequency doubling crystal 32 (potassium titanyl phosphate crystal) is arranged at the focal point of the first coupling device 31 to improve the frequency doubling efficiency. And a first laser separator 33 is arranged at the output end of the frequency doubling crystal 32 and used for separating fundamental frequency 1064nm Q-switched laser and frequency doubling 532nm Q-switched laser. The first laser separator 33 is a flat-flat lens, the surface of the input end of the lens is plated with a 45-degree high-threshold 1064nm high-reflection dielectric film and a 532nm anti-reflection dielectric film, and the surface of the output end of the lens is plated with a high-threshold 532nm anti-reflection dielectric film. After passing through the coupling device 31, the frequency doubling crystal 32 and the first laser separator 33, the 1064nm Q-switched laser outputs a 532nm Q-switched laser with repetition frequency of 1-10HZ, maximum energy of 0.3-0.4J and pulse width of 3-10 ns.
The 532nm Q-switched laser is a pumping light source of the pulse width compression device 40 and acts on the titanium-doped sapphire crystal 44. The lambda/2 wave plate 41 is used for adjusting the polarization direction of 532nm pump light, so that the 532nm pump light direction is consistent with the pi direction of the titanium-doped sapphire crystal 44. The titanium-doped sapphire crystal 44 comprises Ti with the doping concentration of 0.1-0.25%2O3The diameter of the titanium-doped sapphire crystal 44 is phi 5-10 mm, the length of the titanium-doped sapphire crystal is 5-15 mm, the surfaces of the input end and the output end of the titanium-doped sapphire crystal 44 are both planes, and high-threshold 532nm and 780nm antireflection films are plated on the surfaces. Optionally, the center of the titanium-doped sapphire crystal 44 is placed at the focusing focus of the second coupling device 42, and the second coupling device 42 is a focusing mirror with a focal length of 50mm to 500 mm.
The total reflection mirror 43 and the output mirror 45 form a resonant cavity of the pulse width compression device 40. The total reflection mirror 43 adopts a plano-concave mirror, the surface near the pump is a plane and is plated with a high-threshold 532nm anti-reflection dielectric film, the surface near the titanium-doped sapphire crystal 44 is a concave surface, the curvature radius of the concave surface is 100 mm-1000 mm, and the concave surface is plated with a high-threshold 532nm anti-reflection dielectric film and a high-threshold 780nm high-reflection dielectric film; the output mirror 45 is a flat mirror, a high-threshold 780nm dielectric film is plated on the surface, close to the titanium-doped sapphire crystal 44, of the output mirror 45, the transmittance is 45% -85%, a high-threshold 780nm anti-reflection dielectric film is plated on the surface, far away from the titanium-doped sapphire crystal 44, of the output mirror 45, a second laser separator 46 is installed at the output end of the output mirror 45 to separate pump light and 780nm picosecond laser, the second laser separator 46 is a flat-flat mirror, a 45-degree high-threshold 532nm high-reflection dielectric film and a 780nm anti-reflection dielectric film are plated on the surface, close to the output mirror 45, of the second laser separator 46, and a high-threshold 780nm anti-reflection dielectric film is plated on the surface, far away from the output mirror 45, of the second laser separator 46. The pulse width compression device 40 outputs laser with the pulse width of 350 ps-750 ps, the central wavelength of 780nm and the maximum output energy of 0.15-0.2J. 780nm picosecond laser generated by the pulse width compression device 40 is reflected by the reflector 70 and then output to the outside of the medical laser 100. The reflector 70 is a flat-flat 45-degree 780nm laser total reflection mirror.
Optionally, the pulse width compression apparatus 40 further includes a third coupling device 47, the third coupling device 47 is disposed between the output end of the second laser splitter 46 and the reflector 70, the third coupling device 47 may be a collimating mirror or a focusing mirror, and the third coupling device 47 is used to control the beam divergence angle or the beam diameter.
The lambda/2 wave plate 41, the second coupling device 42, the holophote 43, the titanium-doped sapphire crystal 44, the output mirror 45, the second laser separator 46 and the third coupling device 47 are sequentially arranged in a straight line, the lambda/2 wave plate 41, the second coupling device 42, the holophote 43, the titanium-doped sapphire crystal 44 and the output mirror 45 are coaxially arranged, and the axis of the second laser separator 46 and the axis of the output mirror 45 form an included angle of 45 degrees. The titanium doped sapphire crystal 44 is mounted on a red copper heat sink.
The medical laser 100 further comprises a first transmission device 50 and a second transmission device 60, the first transmission device 50 is connected with the pulse width compression device 40, and the first transmission device 50 is used for controlling the pulse width compression device 40 to move into or out of the laser light path; the second actuator 60 is connected to the frequency doubling device 30, and the second actuator 60 is used to control the frequency doubling device 30 to move in or out of the laser beam path. In more detail, the frequency doubling device 30 and the pulse width compression device 40 are independently installed in a bracket, which may be a fixed bracket or an adjustable bracket. The pulse width compression device 40 is fixed on a sliding block connected with the first transmission device 50 through a bracket, the frequency doubling device 30 is fixed on another sliding block connected with the second transmission device 60 through a bracket, and the first transmission device 50 and the second transmission device 60 can be stepping motors, steering engines or rotating motors.
The positions of the pulse width compression device 40 and the frequency doubling device 30 in the medical laser 100 are independently controlled by a first transmission device 50 and a second transmission device 60 respectively. When the frequency doubling device 30 and the pulse width compression device 40 are both arranged on a laser light path, the medical laser 100 outputs 780nm picosecond laser; the laser generating device 10 outputs 1064nm of Q-switched laser, the Q-switched laser is converted into 532nm of Q-switched laser after passing through the frequency doubling device 30, the 532nm of Q-switched laser enters the pulse width compression device 40 as a pump light source, and is converted into 780nm picosecond laser in the pulse width compression device 40. When the first transmission device 50 places the pulse width compression device 40 outside the laser light path and the second transmission device 60 places the frequency doubling device 30 on the laser light path, the medical laser 100 outputs 532nm Q-switched laser; when the first transmission device 50 and the second transmission device 60 place the pulse width compression device 40 and the frequency doubling device 30 outside the laser light path, the medical laser 100 outputs 1064nm Q-switched laser.
The laser generator 10, the frequency doubling device 30 and the pulse width compression device 40 may be arranged in a straight line, or may be arranged by adding a mirror to fold. Both the two arrangement modes have the advantages; when the laser generating device 10, the frequency doubling device 30 and the pulse width compression device 40 are arranged in a straight line, the loss of laser can be reduced; when the laser generator 10, the frequency doubling device 30 and the pulse width compression device 40 are arranged in a folded manner, the space utilization rate can be improved, and the volume of the medical laser 100 can be reduced.
The medical laser 100 further includes a temperature control device, the temperature control device is connected to the frequency doubling crystal 32, the temperature control device is configured to control the temperature of the frequency doubling crystal 32, the conversion rate of the fundamental frequency wave in the frequency doubling crystal 32 is greatly affected by the temperature, and when the frequency doubling crystal 32 is at about 50 ℃, the conversion rate of the fundamental frequency wave is high, and the frequency doubling efficiency is high. The temperature of the frequency doubling crystal 32 is controlled by the temperature control device to improve the conversion degree of the fundamental frequency wave into the frequency doubling wave.
Referring to fig. 2, in another embodiment, the medical laser 100 sequentially includes a laser generator 10, a laser amplifier 20, a frequency multiplier 30, a pulse width compressor 40, and a reflector 70. Wherein the laser amplification stage 20 comprises a pump source 21, a working substance 22 and a light-gathering cavity; the frequency doubling device 30 sequentially comprises a first coupling device 31, a frequency doubling crystal 32 and a first laser separator 33, and the pulse width compression device 40 sequentially comprises a lambda/2 wave plate 41, a second coupling device 42, a total reflection mirror 43, titanium-doped sapphire, an output mirror 45 and a second laser separator 46.
Specifically, the working substance 22 in the laser amplification stage 20 is a neodymium-doped yttrium aluminum garnet crystal rod with the diameter of 8mm-10mm and the length of 80 nm-120 mm, the input end and the output end of the working substance 22 are both planes, two end faces of the working substance are plated with anti-reflection dielectric films with the high threshold value of 1064nm, and the pumping source 21 in the laser amplification stage 20 is one or two pulse xenon lamps with the outer diameter of 6 mm-8 mm and the arc length of 80 nm-110 mm. The laser generating device 10 outputs 1064nm Q-switched laser with repetition frequency of 1-10HZ, maximum energy of 1.2-1.6J and pulse width of 3-10 ns after being amplified by the laser amplifying stage 20.
The surface of the frequency doubling crystal 32 close to the laser amplification stage 20 is plated with a high-threshold 1064nm antireflection dielectric film, and the surface of the frequency doubling crystal 32 far from the laser amplification stage 20 is plated with high-threshold 1064nm and 532nm antireflection dielectric films. The first coupling device 31 is a focusing lens with a focal length of 50 mm-200 mm, and the center of the frequency doubling crystal 32, namely the potassium titanyl phosphate, is arranged at the focal point of the first coupling device 31, so that the frequency doubling efficiency is improved. The output end of the frequency doubling crystal 32 is provided with a first laser separator 33 for separating fundamental frequency 1064nm laser and 532nm frequency doubling laser. The first laser separator 33 is a flat-flat lens, a 45-degree high-threshold 1064nm high-reflection dielectric film and a 532nm anti-reflection dielectric film are plated on the surface of the first laser separator 33 close to the frequency doubling crystal 32, and a high-threshold 532nm anti-reflection dielectric film is plated on the surface of the first laser separator 33 far from the frequency doubling crystal 32. And the 1064nm Q-switched laser passes through the first coupling device 31, the frequency doubling crystal 32 and the first laser separator 33 and is converted into 532nm Q-switched laser with the repetition frequency of 1-10HZ, the maximum energy of 0.4-0.7J and the pulse width of 3-20 ns.
A 532nm Q-switched laser is used as a pumping light source of the pulse width compression device 40 and acts on the titanium-doped sapphire crystal 44. The lambda/2 wave plate 41 is used for adjusting the polarization direction of 532nm pump light, so that the pump light is consistent with the pi direction of the titanium-doped sapphire crystal 44. The titanium-doped sapphire crystal 44 comprises Ti with the doping concentration of 0.1-0.25%2O3The diameter of the titanium-doped sapphire crystal 44 is phi 5-10 mm, the length of the titanium-doped sapphire crystal is 5-15 mm, the surfaces of the input end and the output end of the titanium-doped sapphire crystal 44 are both flat, and high-threshold 532nm and 730nm anti-reflection dielectric films are plated on the surfaces. The center of the titanium-doped sapphire crystal 44 is arranged at the focus of the second coupling device 42, and the second coupling device 42 is a focusing lens with the focal length of 50 mm-500 mm. The total reflector 43 is a plano-concave mirror, the surface of the total reflector 43 far away from the titanium-doped sapphire crystal 44 is a plane, the plane is plated with a high-threshold 532nm anti-reflection dielectric film, the surface of the total reflector 43 close to the titanium-doped sapphire crystal 44 is a concave surface, the curvature radius of the concave surface is 100 mm-1000 mm, and the concave surface is plated with a high-threshold 532nm anti-reflection dielectric film and a high-threshold 730nm high-reflection dielectric film. The output mirror 45 is flatAnd a flat mirror, wherein a high-threshold 730nm dielectric film is plated on the surface of the output mirror 45 close to the titanium-doped sapphire crystal 44, the transmittance of the dielectric film is 45% -85%, and a high-threshold 730nm anti-reflection dielectric film is plated on the surface of the output mirror 45 far from the titanium-doped sapphire crystal 44. The output end of the output mirror 45 is provided with a second laser separator 46 for separating pump light from 730nm picosecond laser, the second laser separator 46 is a flat-flat lens, the surface of the second laser separator 46 close to the output mirror 45 is plated with a 45-degree high-threshold 532nm high-reflection dielectric film and a 730nm anti-reflection dielectric film, and the surface of the second laser separator 46 far away from the output mirror 45 is plated with a high-threshold 730nm anti-reflection dielectric film. The pulse width compression device 40 outputs laser with the pulse width of 350 ps-750 ps, the central wavelength of 730nm and the maximum output energy of 0.2-0.35J. The 730nm picosecond laser output by the pulse width compression device 40 is reflected by the reflector 70 and then output to the outside of the medical laser 100. The reflector 70 is a flat-flat 45 degree 730nm laser total reflection mirror.
The medical laser 100 further comprises a first transmission device 50 and a second transmission device 60, the first transmission device 50 is connected with the pulse width compression device 40, and the first transmission device 50 is used for controlling the pulse width compression device 40 to move into or out of the laser light path; the second actuator 60 is connected to the frequency doubling device 30, and the second actuator 60 is used to control the frequency doubling device 30 to move in or out of the laser beam path.
The output end of the pulse width compression device 40 is provided with a third coupling device 47, and the third coupling device 47 can be a collimating mirror or a focusing mirror. The third coupling means 47 is used to control the beam divergence angle or beam diameter. The third coupling means 47 is placed between the second splitter 46 and the reflector 70.
When the frequency doubling device 30 and the pulse width compression device 40 are both arranged on a 1064nm Q-switched laser light path, the medical laser 100 outputs 730nm picosecond laser light; when the frequency doubling device 30 is arranged on the light path and the pulse width compression device 40 is arranged outside the laser light path, the medical laser 100 outputs 532nm Q-switched laser; when the frequency doubling device 30 and the pulse width compression device 40 are both arranged outside the laser light path, the medical laser 100 outputs 1064nm Q-switched laser. The laser generator 10, the frequency doubling device 30 and the pulse width compression device 40 may be arranged in a straight line, or may be arranged by adding a mirror to fold.
With continued reference to fig. 2, in yet another embodiment, the medical laser 100 comprises, in order, a laser generating device 10, a laser amplifying stage 20, a frequency doubling device 30, a pulse width compression device 40, and a reflector 70. Wherein the laser amplification stage 20 comprises a pump source 21, a working substance 22 and a light-gathering cavity; the frequency doubling device 30 sequentially comprises a first coupling device 31, a frequency doubling crystal 32 and a first laser separator 33; the pulse width compression device 40 sequentially comprises a lambda/2 wave plate 41, a second coupling device 42, a total reflection mirror 43, titanium-doped sapphire, an output mirror 45 and a second laser separator 46.
Specifically, the working substance 22 in the laser amplification stage 20 is a neodymium-doped yttrium aluminum garnet crystal rod with the diameter of 8mm-10mm and the length of 80 nm-120 mm, the input end and the output end of the working substance 22 are both planes, two end faces of the working substance are plated with anti-reflection dielectric films with the high threshold value of 1064nm, and the pumping source 21 in the laser amplification stage 20 is one or two pulse xenon lamps with the outer diameter of 6 mm-8 mm and the arc length of 80 nm-110 mm. The laser generating device 10 outputs 1064nm Q-switched laser with repetition frequency of 1-10HZ, maximum energy of 1.2-1.6J and pulse width of 3-10 ns after being amplified by the laser amplifying stage 20.
The surface of the frequency doubling crystal 32 close to the laser amplification stage 20 is plated with a high-threshold 1064nm antireflection dielectric film, and the surface of the frequency doubling crystal 32 far from the laser amplification stage 20 is plated with high-threshold 1064nm and 532nm antireflection dielectric films. The first coupling device 31 is a focusing lens with a focal length of 50 mm-200 mm, and the center of the frequency doubling crystal 32 (potassium titanyl phosphate) is arranged at the focal point of the first coupling device 31 to improve the frequency doubling efficiency. The output end of the frequency doubling crystal 32 is provided with the first laser separator 33 for separating fundamental frequency 1064nm laser and 532nm frequency doubling laser. The first laser separator 33 is a flat-flat lens, a 45-degree high-threshold 1064nm high-reflection dielectric film and a 532nm anti-reflection dielectric film are plated on the surface of the first laser separator 33 close to the frequency doubling crystal 32, and a 45-degree high-threshold 532nm anti-reflection dielectric film is plated on the surface of the first laser separator 33 far from the frequency doubling crystal 32. After passing through the first coupling device 31, the frequency doubling crystal 32 and the first laser separator 33, the 1064nm Q-switched laser is converted into a 1064nm Q-switched laser with a repetition frequency of 1-10HZ, a maximum energy of 1.2-1.6J and a pulse width of 3-10 ns.
A 532nm Q-switched laser is used as a pumping light source of the pulse width compression device 40 and acts on the titanium-doped sapphire crystal 44. The lambda/2 wave plate 41 is used for adjusting the polarization direction of 532nm pump light, so that the pump light is consistent with the pi direction of the titanium-doped sapphire crystal 44. The titanium-doped sapphire crystal 44 comprises T i with the doping concentration of 0.1-0.25%2O3The diameter of the titanium-doped sapphire is phi 5-10 mm, the length of the titanium-doped sapphire is 5-15 mm, the surfaces of the input end and the output end of the titanium-doped sapphire crystal 44 are both flat surfaces, and antireflection dielectric films with high threshold values of 532nm and 755nm are plated on the surfaces. The center of the titanium-doped sapphire crystal 44 is arranged at the focus of the second coupling device 42, and the second coupling device 42 is a focusing lens with the focal length of 50 mm-500 mm. The total reflector 43 is a plano-concave mirror, the surface of the total reflector 43 far away from the titanium-doped sapphire crystal 44 is a plane, the plane is plated with a high-threshold 532nm anti-reflection dielectric film, the surface of the total reflector 43 close to the titanium-doped sapphire crystal 44 is a concave surface, the curvature radius of the concave surface is 100-1000 mm, and the concave surface is plated with the high-threshold 532nm anti-reflection dielectric film and a high-threshold 755nm high-reflection dielectric film. The output mirror 45 is a flat mirror, a 755nm high-threshold dielectric film is plated on the surface of the output mirror 45 close to the titanium-doped sapphire crystal 44, the transmittance of the dielectric film is 45% -85%, and a 755nm high-threshold anti-reflection dielectric film is plated on the surface of the output mirror 45 far from the titanium-doped sapphire crystal 44. The output end of the output mirror 45 is provided with a second laser separator 46 for separating pump light from 755nm picosecond laser, the second laser separator 46 is a flat-flat lens, the surface of the second laser separator 46 close to the output mirror 45 is plated with a 45-degree high-threshold 532nm high-reflection dielectric film and a 755nm antireflection dielectric film, and the surface of the second laser separator 46 far away from the output mirror 45 is plated with a high-threshold 755nm anti-reflection dielectric filmA reflective dielectric film.
The pulse width compression apparatus 40 further comprises a third coupling device 47, wherein the third coupling device 47 is disposed at an output end of the second laser splitter 46. The third coupling means 47 may be a collimating mirror or a focusing mirror, and the third coupling means 47 is used to control the beam divergence angle or the beam diameter.
The reflector 70 is a flat-flat mirror, and a 45-degree high-threshold 755nm high-reflection dielectric film is plated on the surface of the reflector 70 close to the third coupling device 47.
The laser generating device 10 outputs 1024nm Q-switched laser, the Q-switched laser enters the frequency doubling device 30 after being amplified by the laser amplification stage 20 and is converted into 532nm Q-switched laser, the 532nm Q-switched laser enters the pulse width compression device 40 and acts on the titanium-doped sapphire crystal 44 as a pump light source and is further converted into 755nm picosecond laser, the laser output from the output mirror 45 passes through the laser separator 10 to separate pump light from 755nm picosecond laser, and the 755nm picosecond laser sequentially passes through the third coupling device 47 and the reflector 70, and the 755nm picosecond laser is reflected and output by the reflector 70.
The medical laser 100 further comprises a first transmission device 50 and a second transmission device 60, the first transmission device 50 is connected with the pulse width compression device 40, and the first transmission device 50 is used for controlling the pulse width compression device 40 to move into or out of the laser light path; the second actuator 60 is connected to the frequency doubling device 30, and the second actuator 60 is used to control the frequency doubling device 30 to move in or out of the laser beam path.
The pulse width compression device 40 outputs laser with the pulse width of 350 ps-750 ps, the central wavelength of 755nm and the maximum output energy of 0.2-0.35J. When the frequency doubling device 30 and the pulse width compression device 40 are both arranged on a 1064nm Q-switched laser light path, the medical laser 100 outputs 755nm picosecond laser light; when the frequency doubling device 30 is arranged on the light path and the pulse width compression device 40 is arranged outside the laser light path, the medical laser 100 outputs 532nm Q-switched laser; when the frequency doubling device 30 and the pulse width compression device 40 are both arranged outside the laser light path, the medical laser 100 outputs 1064nm Q-switched laser. The laser generator 10, the frequency doubling device 30 and the pulse width compression device 40 may be arranged in a straight line, or may be arranged by adding a mirror to fold.
The present invention further provides a laser system, which includes a medical laser 100, a laser transmission device 80, and a treatment device 90, wherein the specific structure of the medical laser 100 refers to the above embodiments, and since the laser system adopts all technical solutions of all the above embodiments, at least all beneficial effects brought by the technical solutions of the above embodiments are provided, and are not described in detail herein. Wherein, the picosecond laser output by the medical laser 100 enters the laser transmission device 80 and then reaches the treatment position to implement the treatment through being connected to the treatment device 90.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A medical laser, comprising:
the laser generating device is used for outputting 1064nm Q-switched laser and is arranged on a laser light path;
the frequency doubling device is arranged at the output end of the laser generating device and is used for outputting 532nm Q-switched laser;
the pulse width compression device is arranged at the output end of the frequency doubling device and used for generating picosecond laser of 660nm-800nm, the pulse width compression device comprises a lambda/2 wave plate, a holophote, an output mirror and a titanium-doped sapphire crystal, and the lambda/2 wave plate, the holophote, the titanium-doped sapphire crystal and the output mirror are sequentially arranged at the output end of the frequency doubling device.
2. The medical laser of claim 1, further comprising a first actuator coupled to the pulse width compression device, the first actuator configured to control movement of the pulse width compression device into and out of the laser optical path.
3. The medical laser of claim 2, further comprising a second actuator coupled to the frequency doubling device, the second actuator configured to control the frequency doubling device to move into or out of the laser optical path.
4. The medical laser as set forth in claim 1, further comprising a laser amplification stage, wherein the laser amplification stage is disposed between the laser generating device and the frequency doubling device, and the laser amplifier is disposed in a laser path.
5. The medical laser as claimed in claim 1, wherein the frequency doubling means comprises a first coupling means, a frequency doubling crystal and a first laser separator in sequence, the first laser separator being configured to separate the 1064nm and 532nm Q-switched lasers.
6. The medical laser as claimed in claim 5, wherein a surface of the frequency doubling crystal close to the first coupling device is plated with a high-threshold 1064nm anti-reflection dielectric film, and a surface of the frequency doubling crystal far from the first coupling device is plated with high-threshold 1064nm and 532nm anti-reflection dielectric films.
7. The medical laser as set forth in claim 5, further comprising a temperature control device for controlling the temperature of the frequency doubling crystal.
8. The medical laser of claim 1, wherein the pulse width compression device further comprises a second coupling device disposed between the λ/2 plate and the ti-sapphire, and a second laser splitter disposed at an output end of the output mirror for splitting the pump light and the picosecond laser light.
9. The medical laser as set forth in claim 1, further comprising a reflector for outputting a reflection of the laser light generated by the pulse width compression device to an outside of the medical laser 100.
10. A laser system, comprising the medical laser as claimed in any one of claims 1 to 9, and further comprising a laser transmission device and a treatment device sequentially disposed outside the medical laser, wherein the laser transmission device and the treatment device are disposed on a laser path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111656431.XA CN114498278A (en) | 2021-12-30 | 2021-12-30 | Medical laser and laser system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111656431.XA CN114498278A (en) | 2021-12-30 | 2021-12-30 | Medical laser and laser system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114498278A true CN114498278A (en) | 2022-05-13 |
Family
ID=81507361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111656431.XA Pending CN114498278A (en) | 2021-12-30 | 2021-12-30 | Medical laser and laser system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114498278A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117154526A (en) * | 2023-10-31 | 2023-12-01 | 北京卓镭激光技术有限公司 | Hundred picosecond laser |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1237816A (en) * | 1998-03-13 | 1999-12-08 | 索尼株式会社 | Wavelength converter |
| US6273883B1 (en) * | 1996-04-09 | 2001-08-14 | Cynosure, Inc. | Alexandrite laser system for treatment of dermatological specimens |
| CN1604405A (en) * | 2004-11-17 | 2005-04-06 | 中国科学院上海光学精密机械研究所 | Single longitudinal mode and full solid-state bluish violet light laser |
| CN2917036Y (en) * | 2006-06-30 | 2007-06-27 | 中国科学院上海光学精密机械研究所 | High-power narrow line-width full solid state 455nm pulse laser |
| CN101777724A (en) * | 2009-12-25 | 2010-07-14 | 武汉凌云光电科技有限责任公司 | End-pumped dual-wavelength coaxial switching output Q-switched base-frequency and double-frequency laser |
| CN110637523B (en) * | 2006-06-30 | 2011-07-13 | 中国兵器工业第二0五研究所 | Wave band conversion device for laser pressing instrument |
| CN102263366A (en) * | 2011-06-24 | 2011-11-30 | 西北大学 | All solid-state 579nm yellow Raman laser pumped by laser |
| CN102280807A (en) * | 2011-07-13 | 2011-12-14 | 山东瑞华同辉光电科技有限公司 | Medical multi-wavelength laser |
| CN202749676U (en) * | 2012-06-20 | 2013-02-20 | 沈阳理工大学 | End-pumped dual-wavelength coaxial switching output laser device |
| CN111564752A (en) * | 2020-05-15 | 2020-08-21 | 中康瑞鑫(深圳)科技有限公司 | 755 nanometer picosecond pulse solid laser |
| CN213212648U (en) * | 2020-11-02 | 2021-05-14 | 北京卓镭激光技术有限公司 | Dual-wavelength laser |
| CN113851918A (en) * | 2021-09-01 | 2021-12-28 | 南京佰福激光技术有限公司 | Nanosecond 755nm laser seed source structure |
-
2021
- 2021-12-30 CN CN202111656431.XA patent/CN114498278A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6273883B1 (en) * | 1996-04-09 | 2001-08-14 | Cynosure, Inc. | Alexandrite laser system for treatment of dermatological specimens |
| CN1237816A (en) * | 1998-03-13 | 1999-12-08 | 索尼株式会社 | Wavelength converter |
| CN1604405A (en) * | 2004-11-17 | 2005-04-06 | 中国科学院上海光学精密机械研究所 | Single longitudinal mode and full solid-state bluish violet light laser |
| CN2917036Y (en) * | 2006-06-30 | 2007-06-27 | 中国科学院上海光学精密机械研究所 | High-power narrow line-width full solid state 455nm pulse laser |
| CN110637523B (en) * | 2006-06-30 | 2011-07-13 | 中国兵器工业第二0五研究所 | Wave band conversion device for laser pressing instrument |
| CN101777724A (en) * | 2009-12-25 | 2010-07-14 | 武汉凌云光电科技有限责任公司 | End-pumped dual-wavelength coaxial switching output Q-switched base-frequency and double-frequency laser |
| CN102263366A (en) * | 2011-06-24 | 2011-11-30 | 西北大学 | All solid-state 579nm yellow Raman laser pumped by laser |
| CN102280807A (en) * | 2011-07-13 | 2011-12-14 | 山东瑞华同辉光电科技有限公司 | Medical multi-wavelength laser |
| CN202749676U (en) * | 2012-06-20 | 2013-02-20 | 沈阳理工大学 | End-pumped dual-wavelength coaxial switching output laser device |
| CN111564752A (en) * | 2020-05-15 | 2020-08-21 | 中康瑞鑫(深圳)科技有限公司 | 755 nanometer picosecond pulse solid laser |
| CN213212648U (en) * | 2020-11-02 | 2021-05-14 | 北京卓镭激光技术有限公司 | Dual-wavelength laser |
| CN113851918A (en) * | 2021-09-01 | 2021-12-28 | 南京佰福激光技术有限公司 | Nanosecond 755nm laser seed source structure |
Non-Patent Citations (1)
| Title |
|---|
| 李适民: "《激光器件原理与设计》", 北京：国防工业出版社, pages: 239 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117154526A (en) * | 2023-10-31 | 2023-12-01 | 北京卓镭激光技术有限公司 | Hundred picosecond laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2021128828A1 (en) | End-pump multi-pass slab laser amplifier | |
| US7991028B1 (en) | Tunable solid state laser system | |
| JP2012515935A (en) | Novel optical devices based on conical refraction | |
| CN111641098A (en) | Device for generating high-energy ultrashort pulse and working method thereof | |
| CN113629482B (en) | Subnanosecond green laser | |
| CN111180987B (en) | Orthogonal polarization dual-wavelength laser with adjustable power proportion | |
| WO2023174034A1 (en) | High-brightness picosecond laser system | |
| CN101777724B (en) | End-pumped dual-wavelength coaxial switching output Q-switched base-frequency and double-frequency laser | |
| CN114498278A (en) | Medical laser and laser system | |
| US7639721B2 (en) | Laser pumped tunable lasers | |
| CN101814692A (en) | Medicinal all-solid-state yellow laser | |
| CN216699068U (en) | Medical laser and laser system | |
| CN101345389B (en) | Full-solid state five-wavelength simultaneously outputting laser device and 5-wavelength laser generation method | |
| US7003011B2 (en) | Thin disk laser with large numerical aperture pumping | |
| CN114883896A (en) | 2 mu m laser | |
| CN112260050A (en) | High-order transverse mode green light solid laser | |
| CN107069414A (en) | Minimize hundred picosecond laser beauty instruments | |
| CN113270785A (en) | Continuous wave 1.5 mu m human eye safety all-solid-state self-Raman laser | |
| CN101719623A (en) | Full solid-state laser with optical fiber coupling double-end pump | |
| CN111193169A (en) | Ultraviolet laser based on bicrystal structure | |
| CN116722429B (en) | High-beam-quality long-pulse-width green laser | |
| CN114498280B (en) | Red light laser, laser frequency conversion device and method for generating red light laser | |
| CN217789031U (en) | Laser device | |
| CN115000788B (en) | Narrow pulse width microchip laser | |
| CN216390021U (en) | 266nm pulse solid laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 518000 3rd floor, block a, building F2, Changfeng Industrial Park, Liuxian 3rd road, 68 Xin'an street, Bao'an District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Peninsula Medical Group Co.,Ltd. Address before: 518000 3rd floor, block a, building F2, Changfeng Industrial Park, Liuxian 3rd road, 68 Xin'an street, Bao'an District, Shenzhen City, Guangdong Province Applicant before: Shenzhen Peninsula Medical Co.,Ltd. |