CN105846300A - GaN blue-light laser diode pumped all-solid-state tunable laser - Google Patents

GaN blue-light laser diode pumped all-solid-state tunable laser Download PDF

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Publication number
CN105846300A
CN105846300A CN201610374813.6A CN201610374813A CN105846300A CN 105846300 A CN105846300 A CN 105846300A CN 201610374813 A CN201610374813 A CN 201610374813A CN 105846300 A CN105846300 A CN 105846300A
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laser
gan blue
blue light
laser diode
pumping
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张琦
吕志萍
孙贵花
刘文鹏
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Wanjiang Emerging Industry Technology Development Center
Anhui Firesky Crystal Science And Technology Co Ltd
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Wanjiang Emerging Industry Technology Development Center
Anhui Firesky Crystal Science And Technology Co Ltd
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Priority to CN201610374813.6A priority Critical patent/CN105846300A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

The invention discloses a GaN blue-light laser diode pumped all-solid-state tunable laser. A GaN blue-light laser diode is used as a pumping light source; and rod-like single crystals including Cr ions are used as laser operating substances in a laser resonance cavity. The GaN blue-light laser diode pumped all-solid-state tunable laser disclosed by the invention has the advantages of being compact in structure, high in efficiency, long in service life and the like, and is a novel tunable all-solid-state laser implementation scheme.

Description

A kind of all solid state tunable laser of GaN blue light laser diode pumping
Technical field
The present invention relates to field of lasers, all solid state tunable of a kind of GaN blue light laser diode pumping swashs Light device.
Background technology
Tunable laser has wide practical use in fields such as gas detecting, industrial processes, scientific research, communications.Realization can The technological approaches of tuning laser includes that two classes, a class are with having the laser crystal of wide gain bandwidth as working-laser material, Select to realize the tuning operation of wavelength by wavelength, this class mainly includes the transition metal ion Cr that adulterates3+、Cr4+、Co2+、Ni3 +、Ti3+Etc. substrate as the laser instrument of working-laser material, and colour-center laser, dye laser;An other class is to pass through The parametric process of nonlinear optics realizes certain continuously adjustable laser of wavelength band wavelength.
Using transition metal ions as the solid state laser of active ions be the important tunable laser of a class.As far back as 1964, AT&T Labs of the U.S. just have developed First tunable laser in the world, i.e. Ni2+:MgF2、Co2+:MgF2Laser Device, but this laser works is in low temperature environment, and tuning range is narrow, and output is low, uses limited.In 1979 with chrysoberyl Cr3+:BeAl2O4Tunable laser as working-laser material achieves commercialization.In late 1980s, U.S.'s labor Lun Silifo More's laboratory development Cr3+The serial fluoride of doping, including Cr3+:LiCAF(LiCaAlF6)[]、Cr3+: LiSAF(LiSrAlF6)、Cr3+:LiSGAF(LiSrGaF6);B. Chai in 1992 et al. is found that again new crystal Cr3+: LiSCAF(LiSr0.8Ca0.2AlF6), L. L K. Smith in 1993 etc. have invented again Cr3+:LiSCF(LiSrArF6) crystal, These crystal are respectively provided with excellent tunable laser performance.
In the laser instrument time of incipient nearly 40 years, flash lamp is generally used to swash as pumping source side pumped Ti gem etc. Luminescent crystal obtains tunable laser.Owing to the emission spectrum of flash lamp is issued at the broadest spectrum model of ultraviolet to near-infrared Enclose, cause the Solid State Laser using flash lamp as pumping source will produce substantial amounts of used heat, not only shadow in working-laser material Ringing beam quality, cause lasing efficiency low, the most too much used heat can cause laser crystal component wear so that laser instrument loses Effect.Therefore, after laser has laser diode (LD) appearance of narrow transmitting wavelength, people are just with the absorption band with laser crystal Or the LD that matches of absorbing wavelength as pumping source to develop all solid state tunable laser.
In terms of LD pumping, although the transmitting wavelength of red diodes AlGaInP and Cr3+: the absworption peak phase of LiSAF Join, but AlGaAs also can the lowest be used as pumping source (document: Stephen A. Payne, Larry K. Smith, Raymond J. Beach, et al. Properties of Cr:LiSrAIF6 crystals or laser Operation, Applied Optics, 33 (1994) 5526-5536).1992, Q.ZHANG etc. (document: Qi Zhang, G. J. Dixon, B. H. T. Chai, et al. Electronically tuned diode-laser-pumped Cr:LiSrA1F6Laser, Optics Letters, 17 (1992) 43-45) to have studied first with wavelength be 670nm's AlGaInP laser diode-pumped Cr:LiSAF crystal, it is achieved that single-frequency continuously adjustabe laser exports, tuning range is 858 ~ 920nnm;Within 1994, S. C. W. Hyde achieves the tunable Cr:LiSAF laser instrument of LD pumping first, and femtosecond pulse is permissible It is amplified to 1 μ J, repetition rate 16KHZ;1997, (document: R. Knappe, G. Bitz, the K. J. such as R.Kmappe Boller, et al. Compact single-frequency diode-pumped Cr:LiSAF lasers, Optics Communications, 143 (1997) 42-46) use 670nmLD pumping Cr:LiSAF laser instrument, it is achieved that 800nm ~ The single frequency tunable laser output of 970nm scope, live width is less than 1.2MHz, and the peak power output at 890nm is 16mW.2000 Year, Harbin Institute of Technology's Zhao Wei boundary (document: Zhao Weijiang, Yu Junhua, Zhang Hua, etc. the Cr of diode pumping3+:LiSrAlF6Laser instrument Research, Chinese laser, 27 (2000) 870-872) et al. the 670nm continuous LD pumping 1mm that produces with Semiconductor institute, Chinese Academy of Sciences Cr3+:LiSrAlF6Crystal microchip, it is achieved that the laser output of 5.2mW, tuning range is 832nm ~ 845m.
Zheng Wanjun (document: Zheng Wanjun, 2011.5, the research of pulsed red pumping Cr:LiSAF laser instrument, Taiyuan science and engineering is big Learn master thesis, Taiyuan, Shanxi) etc. with YVO4Two frequency multiplication 671nm laser pump (ing) Cr3+: LiSAF crystal, it is achieved that center Wavelength is 850nm, tuning range is 820nm ~ 890nm, the output of the laser of repetition rate 11kHZ, pulsewidth 100ns.
In recent years, the upsurge popularized due to whole world LED illumination so that the GaN blue light laser diode with GaN as substrate obtains Having arrived fast development, the GaN blue light LD of the most existing watt level sells, and this is that the all-solid state laser developing GaN LD pumping brings newly Opportunity.In the document of open report, not yet find the tunable laser using GaN blue light LD as pumping source.
Summary of the invention it is an object of the invention to provide all solid state tunable of a kind of GaN blue light laser diode pumping and swashs Light device, with the problem solving the prior art tunable laser not using GaN blue light laser diode as pumping source.
In order to achieve the above object, the technical solution adopted in the present invention is:
A kind of all solid state tunable laser of GaN blue light laser diode pumping, including pump light source, laserresonator, with And the working-laser material at laser resonance intracavity, it is characterised in that: described pump light source uses GaN blue light laser diode, The laser emission wavelength of GaN blue light laser diode is between 390 ~ 520nm, and the working-laser material of laser resonance intracavity is rod The monocrystal containing Cr ion of shape, described GaN blue light laser diode uses end pumping or profile pump, i.e. GaN blue light swashs The GaN blue laser of optical diode outgoing focuses on working-laser material end face or side after the front cavity mirror of laserresonator Face, the oscillating laser needed for the generation of excitation laser operation material, oscillating laser exports through the Effect of Back-Cavity Mirror of laserresonator.
The all solid state tunable laser of described a kind of GaN blue light laser diode pumping, it is characterised in that: described sharp Light operation material is Cr3+:BeAl2O4Monocrystal or Cr3+:LiCaAlF6Monocrystal or Cr3+:LiSrAlF6Monocrystal or Cr3 +:LiSrGaF6Monocrystal or Cr3+:LiSr0.2Ca0.8GaF6Monocrystal or Cr4+: YAG monocrystal.
The all solid state tunable laser of described a kind of GaN blue light laser diode pumping, it is characterised in that: described sharp Light operation material be shaped as pole shape, the diameter range of pole is 3 ~ 15mm, a length of 5 ~ 300mm, and end finish is 5/ 10 ~ 10/20, flatness is λ/4 ~ λ/10, wherein λ=632.8nm, and the depth of parallelism is better than 15, and side is polishing rough polishing, and roughness is 0.1 μm ~ 10 μm, the end face of pole is parallel with side or becomes angled α with side, and the angle of α is 0 ° of cloth scholar to material Between this special angle, the perpendicularity for the laser bar of α=0 °, end face and side should be less than 5.
The all solid state tunable laser of described a kind of GaN blue light laser diode pumping, it is characterised in that: described sharp Light operation material be shaped as square rod shape, the cross section of square rod is a rectangular or square when, the length of side of rectangular or square when 2 ~ 40mm, a length of 5 ~ 300mm, end finish is 5/10 ~ 10/20, and flatness is λ/4 ~ λ/10, wherein λ=632.8nm, parallel Degree is better than 15, and side is polishing rough polishing, and roughness is 0.1 μm ~ 10 μm, and the end face of square rod is parallel with side or becomes into side The angle of certain angle α, α is that between 0 ° of Brewster's angle arriving material, the perpendicularity for α=0 °, end face and side should be less than 5'。
The all solid state tunable laser of described a kind of GaN blue light laser diode pumping, it is characterised in that: GaN is blue When ray laser diode uses profile pump, when working-laser material is pole shape, can be from the 1 ~ 6 of working-laser material side Direction carries out pumping;When working-laser material is square rod shape, can from side, the 4 of laser work position 1 or 2, Or 3 or 4 directions carry out pumping.
The all solid state tunable laser of described a kind of GaN blue light laser diode pumping, it is characterised in that: at laser Resonator cavity adds a kind of optics or the combination of multiple optics, sharp to vibration to change the air pressure in laserresonator Optical wavelength is tuned, and described optics is including, but not limited to dispersing prism, etalon, birefringent filter.
The all solid state tunable laser of described a kind of GaN blue light laser diode pumping, it is characterised in that: overall knot Structure can use four mirrors or three-mirror folded cavity structure.
The all solid state tunable laser of described a kind of GaN blue light laser diode pumping, it is characterised in that: at laser Frequency-doubling crystal LBO or ktp crystal or bbo crystal is added, it is achieved wavelength conversion in resonator cavity or outside laserresonator, it is thus achieved that Two frequencys multiplication of fundamental frequency light or frequency tripling or quadruple oscillating laser export.
The present invention proposes a kind of GaN blue light laser diode pumping to realize the technical scheme of tunable laser, tool There are the advantages such as compact conformation, efficiency height, life-span length, are a kind of novel tunable all-solid state laser implementation.
Accompanying drawing explanation
Structural representation when Fig. 1 is that in the present invention, working-laser material is pole shape, wherein:
Fig. 1 a is side view, and Fig. 1 b is top view, and Fig. 1 c is end view.
Structural representation when Fig. 2 is that in the present invention, working-laser material is square rod shape, wherein:
Fig. 1 a is side view, and Fig. 1 b is top view, and Fig. 1 c is end view.
Laser structure figure when Fig. 3 is end pumping in the specific embodiment of the invention, pole shape working-laser material.
Laser structure figure when Fig. 4 is end pumping in the specific embodiment of the invention, square rod shape working-laser material.
Detailed description of the invention
The all solid state tunable laser of a kind of GaN blue light laser diode pumping, including pump light source, laser resonance Chamber, and the working-laser material at laser resonance intracavity, pump light source uses GaN blue light laser diode, GaN blue laser The laser emission wavelength of diode between 390 ~ 520nm, the working-laser material of laser resonance intracavity be bar-shaped containing Cr from The monocrystal of son, described GaN blue light laser diode uses end pumping or profile pump, i.e. GaN blue light laser diode goes out The GaN blue laser penetrated focuses on working-laser material end face or side, excitation laser after the front cavity mirror of laserresonator Oscillating laser needed for operation material generation, oscillating laser exports through the Effect of Back-Cavity Mirror of laserresonator.
Working-laser material is Cr3+:BeAl2O4Monocrystal or Cr3+:LiCaAlF6Monocrystal or Cr3+:LiSrAlF6Single Crystal or Cr3+:LiSrGaF6Monocrystal or Cr3+:LiSr0.2Ca0.8GaF6Monocrystal or Cr4+: YAG monocrystal.
As it is shown in figure 1, working-laser material be shaped as pole shape, the diameter range of pole is 3 ~ 15mm, a length of 5 ~ 300mm, end finish is 5/10 ~ 10/20, and flatness is λ/4 ~ λ/10, wherein λ=632.8nm, and the depth of parallelism is better than 15, side Face is polishing rough polishing, and roughness is 0.1 μm ~ 10 μm, and the end face of pole is parallel with side or becomes angled α with side, α's Angle is that between 0 ° of Brewster's angle arriving material, the perpendicularity for the laser bar of α=0 °, end face and side should be less than 5.
As in figure 2 it is shown, working-laser material be shaped as square rod shape, the cross section of square rod is a rectangular or square when, rectangle Or the foursquare length of side is at 2 ~ 40mm, a length of 5 ~ 300mm, end finish is 5/10 ~ 10/20, and flatness is λ/4 ~ λ/10, Wherein λ=632.8nm, the depth of parallelism is better than 15, and side is polishing rough polishing, and roughness is 0.1 μm ~ 10 μm, the end face of square rod and side Face is parallel or becomes angled α with side, and the angle of α is between 0 ° of Brewster's angle to material, for α=0 °, end face and The perpendicularity of side should be less than 5'.
When GaN blue light laser diode uses profile pump, when working-laser material is pole shape, can be from laser work thing 1 ~ 6 side surface direction of matter carries out pumping;When working-laser material is square rod shape, can be from side, the 4 of laser work position In 1 or 2 or 3 or 4 directions carry out pumping.
A kind of optics or the combination of multiple optics is added, to change in laserresonator in laserresonator Air pressure oscillating laser wavelength is tuned, described optics is including, but not limited to dispersing prism, etalon, birefringence Filter plate.
Overall structure can use four mirrors or three-mirror folded cavity structure.
Frequency-doubling crystal LBO or ktp crystal or bbo crystal is added in laserresonator or outside laserresonator, it is achieved Wavelength conversion, it is thus achieved that two frequencys multiplication of fundamental frequency light or frequency tripling or the output of quadruple oscillating laser.
Specific embodiment 1:
As it is shown on figure 3, GaN blue light laser diode uses end pumping mode, working-laser material in this tunable laser For pole shape, and this tunable laser is four-mirror-folded cavity structure.
This tunable laser includes that GaN blue light laser diode 1, lens 2, the front cavity mirror 3 of laserresonator, laser are humorous Shaking the Effect of Back-Cavity Mirror 4 in chamber, wherein laser resonance intracavity is provided with middle reflection cavity 5, and front cavity mirror 3 is the most right with centre reflecting cavity mirror 5, back cavity Mirror 4 is provided with Birefringent Filter 9, laser work thing before side, and Effect of Back-Cavity Mirror 4 between front cavity mirror 3, middle reflecting cavity mirror 5 Matter 6 is arranged between front cavity mirror 3, middle reflecting cavity mirror 5, between laser resonance intracavity front cavity mirror 3, middle reflecting cavity mirror 5 another Side is provided with etalon 7, transmission chamber mirror 8.Wherein, front cavity mirror 3 is more than 99.9% to pump light light transmittance, to required oscillating laser Reflectance is more than 99.9%;Effect of Back-Cavity Mirror 4 is output coupling cavity mirror, and it is high anti-to pump light, and reflectance is more than 99.9%, swashs vibration Light transmission rate is 0.1 ~ 10%.
The GaN blue laser of GaN blue light laser diode 1 outgoing is after lens 2, through front cavity mirror 3 and focus to laser The front end face A of operation material 6, wherein part GaN blue laser excitation laser operation material 6 produces oscillating laser, remaining GaN Blue laser, transmitted through after working-laser material 6, is reflected by middle reflecting cavity mirror 5 with the oscillating laser produced.Reflection light passes through After Birefringent Filter 9 modulation, being incident to Effect of Back-Cavity Mirror 4, the most remaining GaN blue laser is reflected by Effect of Back-Cavity Mirror 4, through original optical path Being incident to the rear end face of working-laser material 6, excitation laser operation material 6 produces oscillating laser again, original vibration produced Laser part transmitted through exporting after Effect of Back-Cavity Mirror 4, part is reflected tailing edge original optical path by Effect of Back-Cavity Mirror 4 and is back to front cavity mirror 3, produce one after another Raw oscillating laser reflects through front cavity mirror 3, again after etalon is modulated, from mirror 8 outgoing of transmission chamber.
Specific embodiment 2:
As shown in Figure 4, in this tunable laser, GaN blue light laser diode uses end pumping mode, working-laser material For square rod shape, and this tunable laser is three-mirror folded cavity structure.
This tunable laser includes GaN blue light laser diode 1, collimating lens 10, condenser lens 11, laser work thing Matter 6, wherein working-laser material 6 front end face A is coated with pump light transmitance more than 99.9%, is more than oscillating laser reflectance The film of 99.9%, using the front end face A front cavity mirror as laserresonator being coated with film of working-laser material 6, working-laser material 6 rears are provided with middle reflecting cavity mirror 5, and working-laser material side is provided with the Effect of Back-Cavity Mirror 4 of laserresonator, and Effect of Back-Cavity Mirror 4 front It is provided with Birefringent Filter 9.Wherein Effect of Back-Cavity Mirror 4 is high anti-to pump light, and reflectance is more than 99.9%, exists oscillating laser transmitance 0.1~10%。
After the collimated lens of blue laser 10 of GaN blue light laser diode 1 outgoing, condenser lens 11 focus to laser Operation material 6 front end face, excitation laser operation material 6 produces oscillating laser, and oscillating laser reflects through middle reflecting cavity mirror 5, double After refraction wave filter 9 modulation, then export transmitted through Effect of Back-Cavity Mirror 4.

Claims (8)

1. an all solid state tunable laser for GaN blue light laser diode pumping, including pump light source, laserresonator, And the working-laser material at laser resonance intracavity, it is characterised in that: described pump light source uses GaN blue laser two pole Pipe, the laser emission wavelength of GaN blue light laser diode between 390 ~ 520nm, the working-laser material of laser resonance intracavity For the bar-shaped monocrystal containing Cr ion, described GaN blue light laser diode uses end pumping or profile pump, i.e. GaN is blue The GaN blue laser of ray laser diode outgoing focus on after the front cavity mirror of laserresonator working-laser material end face or Side, the oscillating laser needed for the generation of excitation laser operation material, oscillating laser exports through the Effect of Back-Cavity Mirror of laserresonator.
The all solid state tunable laser of a kind of GaN blue light laser diode pumping the most according to claim 1, its feature It is: described working-laser material is Cr3+:BeAl2O4Monocrystal or Cr3+:LiCaAlF6Monocrystal or Cr3+:LiSrAlF6 Monocrystal or Cr3+:LiSrGaF6Monocrystal or Cr3+:LiSr0.2Ca0.8GaF6Monocrystal or Cr4+: YAG monocrystal.
The all solid state tunable laser of a kind of GaN blue light laser diode pumping the most according to claim 1, its feature Be: described working-laser material be shaped as pole shape, the diameter range of pole is 3 ~ 15mm, a length of 5 ~ 300mm, end face Fineness is 5/10 ~ 10/20, and flatness is λ/4 ~ λ/10, wherein λ=632.8nm, and the depth of parallelism is better than 15, and side is thick for polishing Throwing, roughness is 0.1 μm ~ 10 μm, and the end face of pole is parallel with side or becomes angled α with side, and the angle of α is 0 ° and arrives Between the Brewster's angle of material, the perpendicularity for the laser bar of α=0 °, end face and side should be less than 5.
The all solid state tunable laser of a kind of GaN blue light laser diode pumping the most according to claim 1, its feature Be: described working-laser material be shaped as square rod shape, the cross section of square rod is a rectangular or square when, rectangular or square when The length of side at 2 ~ 40mm, a length of 5 ~ 300mm, end finish is 5/10 ~ 10/20, and flatness is λ/4 ~ λ/10, wherein λ= 632.8nm, the depth of parallelism is better than 15, and side is polishing rough polishing, and roughness is 0.1 μm ~ 10 μm, and the end face of square rod is parallel with side Or become angled α, the angle of α with side be between 0 ° of Brewster's angle to material, for α=0 °, end face and side Perpendicularity should be less than 5'.
5. according to all solid state tunable laser of a kind of GaN blue light laser diode pumping described in claim 3 or 4, its It is characterised by: when GaN blue light laser diode uses profile pump, when working-laser material is pole shape, can be from laser work 1 ~ 6 side surface direction of material carries out pumping;When working-laser material is square rod shape, can be from side, the 4 of laser work position In face 1 or 2 or 3 or 4 directions carry out pumping.
The all solid state tunable laser of a kind of GaN blue light laser diode pumping the most according to claim 1, its feature It is: in laserresonator, add a kind of optics or the combination of multiple optics, to change in laserresonator Oscillating laser wavelength is tuned by air pressure, and described optics is including, but not limited to dispersing prism, etalon, birefringence filter Wave plate.
The all solid state tunable laser of a kind of GaN blue light laser diode pumping the most according to claim 1, its feature It is: overall structure can use four mirrors or three-mirror folded cavity structure.
The all solid state tunable laser of a kind of GaN blue light laser diode pumping the most according to claim 1, its feature It is: add frequency-doubling crystal LBO or ktp crystal or bbo crystal in laserresonator or outside laserresonator, it is achieved ripple Long conversion, it is thus achieved that two frequencys multiplication of fundamental frequency light or frequency tripling or the output of quadruple oscillating laser.
CN201610374813.6A 2016-05-30 2016-05-30 GaN blue-light laser diode pumped all-solid-state tunable laser Pending CN105846300A (en)

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CN110492345A (en) * 2019-08-13 2019-11-22 山东师范大学 A kind of tunable wave length Mode Locking With A Nonlinear Mirror laser and working method
CN110650282A (en) * 2019-10-31 2020-01-03 维沃移动通信有限公司 Camera module and electronic equipment
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WO2024031743A1 (en) * 2022-08-10 2024-02-15 山东大学 Method for breaking through limitation of fluorescence spectrum on laser wavelength, and laser device

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CN110492345A (en) * 2019-08-13 2019-11-22 山东师范大学 A kind of tunable wave length Mode Locking With A Nonlinear Mirror laser and working method
CN110492345B (en) * 2019-08-13 2021-01-08 山东师范大学 Wavelength-tunable nonlinear mirror mode-locked laser and working method
CN110650282A (en) * 2019-10-31 2020-01-03 维沃移动通信有限公司 Camera module and electronic equipment
CN112886377A (en) * 2019-11-29 2021-06-01 山东大学 Emerald gemstone continuous tunable laser pumped by 590nm waveband Raman frequency doubling light source
CN112366507A (en) * 2020-11-11 2021-02-12 中国船舶重工集团公司第七0七研究所 Atom cooling optical device based on all-solid-state continuous wave aureosapphire laser
CN112366507B (en) * 2020-11-11 2023-01-17 中国船舶重工集团公司第七0七研究所 Atom cooling optical device based on all-solid-state continuous wave aureosapphire laser
WO2024031743A1 (en) * 2022-08-10 2024-02-15 山东大学 Method for breaking through limitation of fluorescence spectrum on laser wavelength, and laser device

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