CN112366507B - Atom cooling optical device based on all-solid-state continuous wave aureosapphire laser - Google Patents
Atom cooling optical device based on all-solid-state continuous wave aureosapphire laser Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
- H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
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Abstract
The invention relates to an atom cooling optical device based on an all-solid-state continuous wave emerald laser, which comprises an emerald laser, a light beam collimation and beam expansion lens group, a first 780nm half-wave plate, a first polarization splitting prism, an acousto-optic modulator, an electro-optic modulator and an Rb polarization spectrum frequency stabilization module, wherein laser output by the emerald laser is decomposed after sequentially passing through the light beam collimation and beam expansion lens group, the first 780nm half-wave plate and the first polarization splitting prism, one part of light enters the Rb polarization spectrum frequency stabilization module to stabilize the frequency of the emerald laser, and the other part of light passes through the acousto-optic modulator and the electro-optic modulator. The invention uses the sapphire laser to generate high-power 780nm single-frequency linear polarization laser output, uses the Rb atomic polarization spectrum frequency stabilization module to stabilize the frequency of the sapphire laser, and outputs light which is subjected to frequency shift and modulation by the acousto-optic modulator and the electro-optic modulator to generate cooling light and re-pumping light.
Description
Technical Field
The invention belongs to the technical field of laser cooling and trapping of atoms, and relates to an optical device for cooling rubidium atoms, in particular to an atom cooling optical device based on an all-solid-state continuous wave sapphire laser.
Background
The laser cooling and trapping technology of atoms and the application thereof are the research fields which are rapidly developed in recent decades, not only have important academic value in the verification of basic theory, but also provide new technical means for the related fields of laser spectrum, quantum optics, atomic physics, condensed state physics and the like, and are also the premise and the basis for developing precise instruments such as atomic frequency standards, atomic interferometers and the like.
Currently, optical systems for cooling and trapping rubidium (Rb) atoms mainly have two schemes, semiconductor laser-based and fiber laser-based. The output power of the 780nm narrow-linewidth semiconductor laser is generally in the magnitude of dozens of mW, an amplifier is required to be used in a matched mode to amplify the laser power so as to meet the power requirements of subsequent cooling light, probe light and the like, and the miniaturization of a light path is not easy to realize; in the scheme based on the fiber laser, a 1560nm narrow-linewidth laser is generally used as a seed source, and after the seed source passes through an erbium-doped fiber amplifier, a frequency doubling crystal is used for generating 780nm laser.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides an all-solid-state continuous wave sapphire laser-based atom cooling optical device capable of efficiently cooling and capturing rubidium (Rb) atoms.
The technical scheme adopted by the invention for solving the technical problem is as follows:
an atom cooling optical device based on an all-solid-state continuous wave emerald laser comprises an emerald laser, a light beam collimation and beam expansion lens group, a first 780nm half-wave plate, a first polarization splitting prism, an acousto-optic modulator, an electro-optic modulator and an Rb polarization spectrum frequency stabilization module, wherein the light beam collimation and beam expansion lens group, the first 780nm half-wave plate and the first polarization splitting prism are sequentially arranged in the laser output direction of the emerald laser, the Rb polarization spectrum frequency stabilization module is arranged in the laser transmission direction of the first polarization splitting prism, the Rb polarization spectrum frequency stabilization module is connected with the emerald laser, and the acousto-optic modulator and the electro-optic modulator are sequentially arranged in the laser reflection direction of the first polarization splitting prism.
And the light passing surfaces of the acousto-optic modulator and the electro-optic modulator are both plated with 780nm wavelength antireflection films.
Moreover, the emerald laser comprises a laser diode pumping source, a pumping light coupling system, a emerald crystal, a 780nm resonant cavity first reflector, a 780nm resonant cavity second reflector, a 780nm resonant cavity third reflector, a double-refraction filter, an etalon, an optical isolator and piezoelectric ceramics, wherein the 780nm resonant cavity first reflector, the 780nm resonant cavity second reflector, the 780nm resonant cavity third reflector and the 780nm laser output mirror are annularly arranged to form a butterfly-shaped four-mirror annular cavity, the 780nm resonant cavity first reflector and the 780nm resonant cavity second reflector are sequentially arranged in the laser output direction of the laser diode pumping source at intervals, and the 780nm resonant cavity third reflector and the 780nm laser output mirror are symmetrically arranged at the sides of the 780nm resonant cavity first reflector and the 780nm resonant cavity second reflector; the back of the 780nm resonant cavity third reflector is connected with a piezoelectric ceramic, a emerald crystal is arranged between the 780nm resonant cavity first reflector and the 780nm resonant cavity second reflector, an optical isolator is arranged between the 780nm resonant cavity third reflector and the 780nm laser output mirror, and a birefringence filter and an etalon are inserted into a light propagation path in the butterfly-shaped four-mirror annular cavity.
And two end faces of the sapphire crystal are polished, cut at a Brewster angle, and plated with an antireflection film for the wavelength of the pump light emitted by the laser diode pump source and an antireflection film for the wavelength of 780 nm.
Moreover, the 780nm resonant cavity first reflecting mirror and the 780nm resonant cavity second reflecting mirror are both planoconvex mirrors, and the two surfaces of the 780nm resonant cavity first reflecting mirror and the 780nm resonant cavity second reflecting mirror are plated with antireflection films of the pumping light wavelength emitted by the laser diode pumping source, and the concave surface is plated with a 780nm wavelength high-reflection film; the 780nm resonant cavity third reflector is a plane mirror, and a 780nm wavelength high-reflection film is plated on one surface of the 780nm resonant cavity third reflector, which is opposite to the 780nm resonant cavity second reflector; the 780nm laser output mirror is a plane mirror.
The Rb polarization spectrum frequency stabilization module comprises a second 780nm half-wave plate, a third 780nm half-wave plate, a second polarization splitting prism, a third polarization splitting prism, an Rb atom air chamber, a first total reflection mirror, a second total reflection mirror, a third total reflection mirror, a beam splitter, a 780nm quarter-wave plate, a differential detector and a feedback module, wherein the second 780nm half-wave plate and the second polarization splitting prism are arranged in the laser transmission direction of the first polarization splitting prism at intervals in sequence, the Rb atom air chamber, the beam splitter, the third 780nm half-wave plate and the third polarization splitting prism are arranged in the laser transmission direction of the second polarization splitting prism, the first total reflection mirror is arranged in the laser reflection direction of the second polarization splitting prism, the 780nm quarter-wave plate and the second total reflection mirror are arranged in the laser reflection direction of the first total reflection mirror, the second total reflection mirror reflects laser to the beam splitter and then is reflected by the beam splitter to enter the Rb half-wave plate air chamber reversely, the differential detector is arranged in the laser transmission direction of the third polarization splitting prism, the third polarization splitting prism is arranged in the laser transmission direction of the third polarization splitting prism, the third polarization splitting mirror is used for reflecting the laser reflection of the third polarization splitting prism, and the third polarization splitting mirror is connected with the third polarization splitting ceramic reflection module, and the feedback module.
And the feedback module comprises a proportional-integral-differential amplifier, an adder and a high-voltage amplifier, wherein the input end of the proportional-integral-differential amplifier is connected with the output end of the differential detector, the output end of the proportional-integral-differential amplifier is connected with the input end of the adder, the output end of the adder is connected with the input end of the high-voltage amplifier, and the output end of the high-voltage amplifier is connected with the piezoelectric ceramic.
The invention has the advantages and positive effects that:
1. the gain medium of the invention uses the diamond (Cr) of the diamond laser 3+ :BeAl 2 O 4 ) The crystal has a large thermal conductivity (23W/mK) and a high optical damage threshold (>270J/cm 2 ) So that the influence of the thermal effect of the sapphire laser is small under high pumping power; and it has a wider absorption band (350-690 nm), can use the red light diode to carry out the pumping, and simple structure is compact on the one hand, can reduce the quantum loss between pump light and the laser wavelength on the other hand, alleviates the heat effect in the laser instrument, realizes high power high efficiency laser output easily.
2. The output wavelength of the inventive emerald laser covers Rb atom 5 2 S 1/2 →5 2 P 3/2 The transition wavelength of the energy level is 780.24nm, and a frequency-stabilized aurelium laser of an Rb atomic polarization spectrum is used as an Rb atomic laser cooling light source, so that high-power 780nm single-frequency linear polarization laser can be directly output, and sufficient light power is provided for frequency shift and modulation of follow-up multi-purpose laser; an amplifier or a frequency doubling device is not needed in the light path, the structure is simple and compact, the cost is economic, and the miniaturization of the system is facilitated.
Drawings
FIG. 1 is a schematic view of the present invention.
The components represented by the symbols in the figures are: 1 is laser diode pump source; 2 is a pump light coupling system; 3 is a aureobasite crystal; 4 is a birefringent filter; 5 is an etalon; 6 is an optical isolator; 7 is a 780nm resonant cavity mirror; 8 is piezoelectric ceramic; 9 is a 780nm laser output mirror; 10 is a light beam collimation and expansion lens group; 11 is a 780nm half-wave plate; 12 is a polarization beam splitter prism; 13 is an Rb atom gas chamber; 14 is a total reflection mirror; 15 is a beam splitter; 16 is a 780nm quarter wave plate; 17 is a differential detector; 18 is a proportional integral differential amplifier; 19 is an adder; 20 is a high voltage amplifier; 21 is an acousto-optic modulator; 22 is an electro-optic modulator.
Detailed Description
The present invention is further illustrated by the following specific examples, which are intended to be illustrative, not limiting and are not intended to limit the scope of the invention.
An atom cooling optical device based on an all-solid-state continuous wave aureosapphire laser is shown in figure 1 and comprises an aureosapphire laser, a light beam collimation and beam expansion lens group (10), a first 780nm half-wave plate (11-1), a first polarization splitting prism (12-1), an acousto-optic modulator (21), an electro-optic modulator (22) and an Rb polarization spectrum frequency stabilization module.
The sapphire laser comprises a laser diode pumping source (1), a pumping light coupling system (2), a sapphire crystal (3), a 780nm resonant cavity first reflector (7-1), a 780nm resonant cavity second reflector (7-2), a 780nm resonant cavity third reflector (7-3), a birefringence filter (4), an etalon (5), an optical isolator (6) and piezoelectric ceramics (8). The laser diode pump source is characterized in that a first 780nm resonant cavity reflector (7-1), a second 780nm resonant cavity reflector (7-2), a third 780nm resonant cavity reflector (7-3) and a second 780nm resonant cavity reflector (9) are annularly arranged to form a butterfly-shaped four-mirror annular cavity, the first 780nm resonant cavity reflector (7-1) and the second 780nm resonant cavity reflector (7-2) are sequentially arranged in the laser output direction of the laser diode pump source (1) at intervals, and the third 780nm resonant cavity reflector (7-3) and the second 780nm resonant cavity reflector (9) are symmetrically arranged at the sides of the first 780nm resonant cavity reflector (7-1) and the second 780nm resonant cavity reflector (7-2). Both the 780nm resonant cavity first reflector (7-1) and the 780nm resonant cavity second reflector (7-2) are planoconvex mirrors, and both surfaces of the 780nm resonant cavity first reflector (7-1) and the 780nm resonant cavity second reflector (7-2) are plated with antireflection films of pump light wavelength emitted by a laser diode pump source, and the concave surface is plated with a 780nm wavelength high-reflection film; the 780nm resonant cavity third reflector (7-3) is a plane mirror, a 780nm wavelength high-reflection film is plated on one surface of the 780nm resonant cavity third reflector (7-3) opposite to the 780nm resonant cavity second reflector (7-2), and the other surface of the 780nm resonant cavity third reflector (7-3) is connected with a piezoelectric ceramic (8); the 780nm laser output mirror (9) is a plane mirror and has certain transmittance for 780nm wavelength. A aureoviridian crystal (3) is arranged between a 780nm resonant cavity first reflecting mirror (7-1) and a 780nm resonant cavity second reflecting mirror (7-2), two end faces of the aureoviridian crystal (3) are polished and cut at a Brewster angle, and an antireflection film of the wavelength of the pumping light emitted by a laser diode pumping source and an antireflection film of the wavelength of 780nm are plated. An optical isolator (6) is arranged between a third reflector (7-3) of the 780nm resonant cavity and a 780nm laser output mirror (9), so that the 780nm laser in the resonant cavity is transmitted by unidirectional traveling waves, and the spatial hole burning effect can be eliminated; a birefringent filter (4) and an etalon (5) are inserted into the butterfly-shaped four-mirror annular cavity, so that the line width narrowing and longitudinal mode selection of 780nm laser are realized, and the 780nm single-frequency laser is obtained.
A light beam collimation and beam expansion lens group (10), a first 780nm half-wave plate (11-1) and a first polarization splitting prism (12-1) are sequentially arranged in the laser output direction of the emerald laser, namely in the 780nm linear polarization laser direction output by a 780nm laser output mirror (9), and 780nm single-frequency linear polarization light is decomposed under the action of the first polarization splitting prism (12-1).
An acousto-optic modulator (21) and an electro-optic modulator (22) are sequentially arranged in the laser reflection direction of the first polarization beam splitter prism (12-1), the modulation frequency of the acousto-optic modulator is 120MHz, the modulation frequency of the electro-optic modulator is 6.581GHz, and the light transmission surfaces of the acousto-optic modulator and the electro-optic modulator are all plated with 780nm wavelength antireflection films. And an Rb polarization spectrum frequency stabilization module is arranged in the transmission direction of the 780nm single-frequency linearly polarized light of the first polarization splitting prism. The Rb polarization spectrum frequency stabilization module comprises a second 780nm half-wave plate (11-2), a third 780nm half-wave plate (11-3), a second polarization splitting prism (12-2), a third polarization splitting prism (12-3), an Rb atom gas chamber (13), a first total reflection mirror (14-1), a second total reflection mirror (14-2), a third total reflection mirror (14-3), a beam splitter (15), a 780nm quarter-wave plate (16), a differential detector (17) and a feedback module. A second 780nm half-wave plate (11-2) and a second polarization splitting prism (12-2) are sequentially arranged in the laser transmission direction of the first polarization splitting prism (12-1) at intervals, and an Rb atom air chamber (13), a beam splitter (15), a third 780nm half-wave plate (11-3) and a third polarization splitting prism (12-3) are arranged in the laser transmission direction of the second polarization splitting prism (12-2); a first total reflection mirror (14-1) is arranged in the laser reflection direction of the second polarization splitting prism (12-2), and a 780nm quarter wave plate (16) and a second total reflection mirror (14-2) are arranged in the laser reflection direction of the first total reflection mirror (14-1).
A third full-reflecting mirror (14-3) is arranged in the laser reflection direction of the third polarization beam splitter prism (12-3), a differential detector (17) is used for receiving the laser transmitted by the third polarization beam splitter prism (12-3) and the laser reflected by the third full-reflecting mirror (14-3), and the differential detector (17) is connected with the piezoelectric ceramic (8) through a feedback module. The feedback module comprises a proportional-integral-differential amplifier (18), an adder (19) and a high-voltage amplifier (20), wherein the input end of the proportional-integral-differential amplifier (18) is connected with the output end (17) of the differential detector, the output end of the proportional-integral-differential amplifier (18) is connected with the input end of the adder (19), the output end of the adder (19) is connected with the input end of the high-voltage amplifier (20), and the output end of the high-voltage amplifier (20) is connected with the piezoelectric ceramic (8).
The working principle of the invention is as follows:
the laser diode pump source (1) emits pump light in an absorption band of the sapphire crystal (3), and the pump light is focused on the sapphire crystal (3) through the pump light coupling system (2). The chrysophyte crystal (3) absorbs pump light to form particle number reversal, along with the increase of the pump light, 780nm linear polarization laser is generated under the feedback action of a butterfly-shaped four-mirror annular cavity formed by a 780nm resonant cavity first reflector (7-1), a 780nm resonant cavity second reflector (7-2), a 780nm resonant cavity third reflector (7-3) and a 780nm laser output mirror (9), and an optical isolator (6) ensures that the 780nm laser in the resonant cavity is transmitted by unidirectional traveling waves, so that the spatial hole burning effect is eliminated; the double refraction filter (4) and the etalon (5) are used for realizing the line width narrowing and the longitudinal mode selection of 780nm laser, so that 780nm single-frequency laser is obtained; the 780nm single-frequency linear polarization laser output by the 780nm output mirror (9) passes through the beam collimation and beam expansion lens group (10) to realize collimation and beam expansion.
The 780nm single-frequency linear polarized light is decomposed under the action of the first 780nm half-wave plate (11-1) and the first polarization splitting prism (12-1), most of power is used for generating cooling light and re-pumping light, and the rest of power is used for stabilizing the frequency of the sapphire laser by using the Rb polarization spectrum frequency stabilizing module.
The 780nm laser for stabilizing the frequency of the sapphire laser by using the Rb polarization spectrum frequency stabilizing module directly transmits through a first polarization beam splitter prism (12-1), then passes through a second 780nm half-wave plate (11-2) and a second polarization beam splitter prism (12-2), a small part of the laser as detection light passes through an Rb atom gas chamber (13), a large part of the laser as pumping light passes through a first total reflection mirror (14-1), and the second total reflection mirror (14-2) and a beam splitter (15) are reflected for three times and then reversely overlapped with the detection light to enter the Rb atom gas chamber (13); the pump light is adjusted in polarization state to circularly polarized light by a 780nm quarter wave plate (16) before entering the Rb atom gas cell (13).
The linear polarization detection light passes through an Rb atom air chamber (13) and a beam splitter (15), then is decomposed into two paths of light by a third 780nm half-wave plate (11-3), a third polarization splitting prism (12-3) and a third total reflection mirror (14-3), is received by a differential detector (17) for differential detection, and obtains a frequency correction signal, and the frequency correction signal is negatively fed back to the piezoelectric ceramic (8) through a feedback loop consisting of a proportional-integral-differential amplifier (18), an adder (19) and a high-voltage amplifier (20); the voltage amplitude and bias of piezoelectric ceramic (8) added on a third reflector (7-3) of a 780nm resonant cavity in the sapphire laser are adjusted to obtain an Rb atomic polarization spectrum which is used as a frequency discrimination curve; the frequency of the sapphire laser can be locked to by adjusting the parameters of the PID amplifier (18) 87 Rb atom 5 2 S 1/2 F g ＝2→5 2 P 3/2 F e =2 and F e On the crossing peak = 3.
780nm laser after frequency locking is reflected by a first polarization beam splitter prism (12-1), and then frequency shift is carried out by the acousto-optic modulator (21), so that relative frequency is obtained 87 Rb atom 5 2 S 1/2 F g ＝2→5 2 P 3/2 F e The +1 st order diffracted light of 13MHz red detuning of 3 transition frequency is used as cooling light; the cooling light passes through the electro-optical modulator (22) to generate modulation sidebands while obtaining a frequency of 5 2 S 1/2 F g ＝1→5 2 P 3/2 F e The re-pump light of the resonant transition frequency =2 can be used for cooling and trapping Rb atoms.
The effect of the present invention is verified by a specific embodiment.
A 638nm laser diode pump source is adopted to emit corresponding pump light in an absorption band of the sapphire crystal, and the pump light is focused on the sapphire crystal 3 through a pump light coupling system consisting of a transmission optical fiber and a shaping focusing coupling lens group; the diamond crystal 3 is c-cut, the end face is cut at Brewster angle, two end faces are plated with antireflection films with wavelengths of 638nm and 780nm, the crystal size is 3mm multiplied by 10mm, cr 3+ The doping concentration is 0.2at.%, the indium sheet is wrapped in a heat sink, the working temperature of the heat sink is controlled by a cooling circulating water system, and the b axis and the Brewster end face of the heat sink are arranged in parallel with the horizontal plane to obtain p-polarized 780nm laser output.
The 780nm resonant cavity first reflector and the 780nm resonant cavity second reflector are plano-concave mirrors with the curvature radius of 100mm, 638nm antireflection films are plated on two surfaces, and 780nm high-reflection films are plated on concave surfaces; in order to compensate astigmatism introduced by the Brewster angle of the sapphire crystal, the folding angles of the 780nm resonant cavity first reflecting mirror and the 780nm resonant cavity second reflecting mirror are set to be 30 degrees; the 780nm resonant cavity third reflector is a plane mirror, one surface is plated with a 780nm high reflection film, the folding angle of the light beam is 30 degrees, and the other surface is connected with the piezoelectric ceramic; the 780nm laser output mirror is a plane mirror, and the transmittance to 780nm is T =2%.
The aureosapphire crystal absorbs 638nm pump light to form particle number reversal, and 780nm linear polarized light is generated under the feedback action of a butterfly-shaped four-mirror annular cavity formed by a 780nm resonant cavity first reflector, a 780nm resonant cavity second reflector, a 780nm resonant cavity third reflector and a 780nm laser output mirror; the optical isolator ensures the unidirectional transmission of 780nm laser in the annular cavity and eliminates the spatial hole burning effect; narrowing the line width of the laser by using three quartz birefringent filters with the thickness ratio of 1; a quartz etalon with the thickness of 0.2mm is inserted into the butterfly-shaped four-mirror annular cavity, the output wavelength is accurately adjusted by rotating the placement angle of the etalon, and 780nm single-frequency output is obtained on the basis of unidirectional traveling wave operation and narrow line width of the birefringent filter plate assembly; the transmission angle of 780nm single-frequency linear polarized light output by the 780nm laser output mirror part is divergent, and the transmission angle is collimated and expanded (or contracted) by using a light beam collimation and expansion lens group so as to obtain a proper light spot size.
After the 780nm single-frequency linearly polarized light passes through the first 780nm half-wave plate and the first polarization splitting prism, most of power is reflected by the first polarization splitting prism and is used for generating cooling light and re-pumping light; the power transmitted by the first polarization beam splitter prism is used for stabilizing the frequency of the sapphire laser by utilizing the Rb polarization spectrum;
after the transmission light passing through the first polarization splitting prism passes through the second 780nm half-wave plate and the second polarization splitting prism, a small part of power is transmitted by the second polarization splitting prism and enters the Rb atom gas chamber with phi 20mm multiplied by 50mm to be used as detection light, the rest s-polarized light reflected by the second polarization splitting prism is reflected by the first holophote, is converted into circularly polarized light by the 780nm quarter-wave plate, is reflected by the second holophote and the beam splitter, passes through the Rb atom gas chamber as the pumping light and the detection light in a reverse direction, and is superposed with the detection light by adjusting the first holophote and the second holophote; the detection light passes through a third 780nm half-wave plate, a third polarization beam splitter prism and a third full-reflecting mirror and then is decomposed into two paths of light, and the two paths of light are received by a differential photoelectric detector for differential detection.
The voltage amplitude and bias of the piezoelectric ceramic added on the third reflector of 780nm resonant cavity in the sapphire laser are adjusted to scan the frequency of the sapphire laser, and the frequency corresponding to the frequency of the sapphire laser can be obtained 87 Rb atom 5 2 S 1/2 F g ＝2→5 2 P 3/2 F e Polarization spectrum of =1,2,3 transition; the frequency correction signal is negatively fed back to the piezoelectric ceramic through a feedback module consisting of a proportional-integral-differential amplifier, an adder and a high-voltage amplifier, and the parameters of the proportional-integral-differential amplifier are adjusted to enable the frequency correction signal to be processedFrequency locking of a sapphire laser to 5 2 S 1/2 F g ＝2→5 2 P 3/2 F e =2 and F e On the crossing peak = 3.
After the 780nm single-frequency linear polarized light after frequency locking is reflected by the first polarization beam splitter prism, the +1 st-order diffracted light of the linear polarized light passes through the acousto-optic modulator with the modulation frequency of 120MHz relatively to 5 2 S 1/2 F g ＝2→5 2 P 3/2 F e =3 transition frequency red detuning 13MHz, as cooling light; cooling light passes through an electro-optical modulator with the modulation frequency of 6.581GHz to generate modulation sidebands, and output laser except the cooling light obtains the frequency of 5 2 S 1/2 F g ＝1→5 2 P 3/2 F e A re-pumping light with a resonance transition frequency of =2 87 Cooling and capturing Rb atoms;
and the light transmission surfaces of the acousto-optic modulator and the electro-optic modulator are plated with anti-reflection films with the wavelength of 780 nm.
In the above embodiment, the 638nm red light diode is used as the pumping source of the sapphire laser, and in the concrete implementation, the 690nm red light diode may also be used as the pumping source to further reduce the thermal load in the sapphire-doped laser, which is not limited in the embodiment of the present invention.
In the embodiment of the present invention, the size and doping concentration of the sapphire crystal, the thickness or number of the birefringent filter and the etalon, the curvature radius and transmittance of each cavity mirror, and the length of the Rb atom gas chamber may be selected according to actual needs, and when the embodiment of the present invention is specifically implemented, the embodiment of the present invention is not limited to this.
In the embodiment of the invention, the frequency locking spectral line of the sapphire laser can be selected according to actual needs, the modulation frequencies of the corresponding acousto-optic modulator and the electro-optic modulator can be correspondingly changed, and the embodiment of the invention is not limited to this.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various changes and modifications can be made without departing from the inventive concept, and these changes and modifications are all within the scope of the present invention.
Claims (5)
1. An atom cooling optical device based on an all-solid-state continuous wave sapphire laser is characterized in that: the device comprises a emerald laser, a light beam collimation and beam expansion lens group, a first 780nm half-wave plate, a first polarization beam splitting prism, an acousto-optic modulator, an electro-optic modulator and an Rb polarization spectrum frequency stabilization module, wherein the light beam collimation and beam expansion lens group, the first 780nm half-wave plate and the first polarization beam splitting prism are sequentially arranged in the laser output direction of the emerald laser, the Rb polarization spectrum frequency stabilization module is arranged in the laser transmission direction of the first polarization beam splitting prism and is connected with the emerald laser, and the acousto-optic modulator and the electro-optic modulator are sequentially arranged in the laser reflection direction of the first polarization beam splitting prism;
the aurora laser comprises a laser diode pumping source, a pumping light coupling system, a aurora crystal, a 780nm resonant cavity first reflector, a 780nm resonant cavity second reflector, a 780nm resonant cavity third reflector, a birefringent filter, an etalon, an optical isolator and piezoelectric ceramics, wherein the 780nm resonant cavity first reflector, the 780nm resonant cavity second reflector, the 780nm resonant cavity third reflector and a 780nm laser output mirror are annularly arranged to form a butterfly-shaped four-mirror annular cavity, the 780nm resonant cavity first reflector and the 780nm resonant cavity second reflector are sequentially arranged in the laser output direction of the laser diode pumping source at intervals, and the 780nm resonant cavity third reflector and the 780nm laser output mirror are symmetrically arranged at the sides of the 780nm resonant cavity first reflector and the 780nm resonant cavity second reflector; the back of a 780nm resonant cavity third reflector is connected with a piezoelectric ceramic, a emerald crystal is placed between the 780nm resonant cavity first reflector and the 780nm resonant cavity second reflector, an optical isolator is installed between the 780nm resonant cavity third reflector and the 780nm laser output mirror, and three quartz double refraction filters and quartz etalons with the thickness ratio of 1;
the Rb polarization spectrum frequency stabilization module comprises a second 780nm half-wave plate, a third 780nm half-wave plate, a second polarization beam splitter, a third polarization beam splitter prism, an Rb atom gas chamber, a first total reflection mirror, a second total reflection mirror, a third total reflection mirror, a beam splitter, a 780nm quarter-wave plate, a differential detector and a feedback module, wherein the second 780nm half-wave plate and the second polarization beam splitter are sequentially arranged in the laser transmission direction of the first polarization beam splitter at intervals;
the modulation frequency of the acousto-optic modulator is 120MHz, and +1 st-order diffraction light is taken as cooling light; the electro-optical modulator modulates the cooling light, and the modulation frequency is 6.581GHz;
frequency locking of a sapphire laser to 5 2 S 1/2 F g ＝2→5 2 P 3/2 F e =2 and F e =3 cross peak.
2. The all-solid-state continuous wave emerald laser-based atom cooling optical device of claim 1, wherein: and light transmission surfaces of the acousto-optic modulator and the electro-optic modulator are plated with 780nm wavelength antireflection films.
3. The all-solid-state continuous wave emerald laser-based atom cooling optical device of claim 1, wherein: and two end faces of the diamond crystal are polished, cut at a Brewster angle, and plated with an antireflection film with a pumping light wavelength emitted by a laser diode pumping source and an antireflection film with a wavelength of 780 nm.
4. The all-solid-state continuous wave sapphire laser-based atomic cooling optical device of claim 1, wherein: the 780nm resonant cavity first reflecting mirror and the 780nm resonant cavity second reflecting mirror are both plano-concave mirrors, both surfaces of the 780nm resonant cavity first reflecting mirror and the 780nm resonant cavity second reflecting mirror are plated with antireflection films of pump light wavelength emitted by a laser diode pump source, and the concave surface is plated with a 780nm wavelength high-reflection film; the 780nm resonant cavity third reflector is a plane mirror, and a 780nm wavelength high-reflection film is plated on one surface of the 780nm resonant cavity third reflector, which is opposite to the 780nm resonant cavity second reflector; the 780nm laser output mirror is a plane mirror.
5. The all-solid-state continuous wave emerald laser-based atom cooling optical device of claim 1, wherein: the feedback module comprises a proportional-integral-differential amplifier, an adder and a high-voltage amplifier, wherein the input end of the proportional-integral-differential amplifier is connected with the output end of the differential detector, the output end of the proportional-integral-differential amplifier is connected with the input end of the adder, the output end of the adder is connected with the input end of the high-voltage amplifier, and the output end of the high-voltage amplifier is connected with the piezoelectric ceramic.
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