CN101308994A - Folding cavity self-raman frequency doubling completely solid yellow laser - Google Patents

Folding cavity self-raman frequency doubling completely solid yellow laser Download PDF

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CN101308994A
CN101308994A CNA2008101380303A CN200810138030A CN101308994A CN 101308994 A CN101308994 A CN 101308994A CN A2008101380303 A CNA2008101380303 A CN A2008101380303A CN 200810138030 A CN200810138030 A CN 200810138030A CN 101308994 A CN101308994 A CN 101308994A
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crystal
raman
frequency
laser
wave band
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丛振华
张行愚
王青圃
李述涛
陈晓寒
刘兆军
范书振
张琛
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Shandong University
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Shandong University
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Abstract

Disclosed is an all-solid-state double frequency yellow Raman laser device with a folded cavity, which includes a LD (laser diode) pump source and a resonator. The resonator is composed of a rear cavity mirror, a 45 degrees reflection mirror and a total reflective mirror. The laser device of the invention is characterized in that a laser amplifying medium, a Q value adjusting device, a Raman crystal are arranged between the rear cavity mirror and the 45 degrees reflection mirror of the resonator; a frequency doubling crystal is arranged between the 45 degrees reflection mirror and the total reflective mirror. The temperature of the laser amplifying medium, the Q value adjusting device, the Raman crystal and the frequency doubling crystal is controlled by a cooling device. Compared with prior art, the laser device of the invention has small volume, high output power and high conversion efficiency. Due to the small volume, stable performance and low cost, the laser device can be widely used in laser medical treatment field.

Description

Folding cavity self-raman frequency doubling completely solid yellow laser
(1) technical field
The present invention relates to a kind of solid state laser, particularly a kind of folding cavity self-raman frequency doubling completely solid yellow laser.
(2) background technology
Laser technology is one of invention of great significance of twentieth century, now has been widely used in every field such as industrial production, communication, information processing, health care, military affairs, culture and education and scientific research.Along with the important breakthrough of semiconductor laser diode technology, solid state laser obtains powerful development, and its application is constantly expanded.The all solid laser that utilizes the LD pumping be a kind of efficient, stable,, the second generation novel solid laser of good beam quality, long-life, compact conformation, what become the laser subject gives priority to one of direction, in space communication, optical fiber communication, atmospheric research, environmental science, medicine equipment, optical image is handled, and high-tech areas such as laser printer have the application prospect that shows unique characteristics.
The laser of yellow band can be treated hemangioma cutis, nevus flammeus, telangiectasis, brandy nose and spider angioma etc., is widely used in the laser medicine field.Gold-tinted laser can be used as sodium beacon light source, at military, meteorological field important application is arranged.Yellow light laser also is widely used in fields such as spectroscopy, information stores, laser radars.At present, the research that produces ruddiness, green glow, blue light by intracavity frequency doubling by the total solidifying laser device of LD pumping is comparative maturity, but, the laser that produces yellow band with the microlaser of LD pumping is than above several wave bands difficulty all, this be because current active ions have that the spectral line of enough big stimulated emission cross sections is feasible can be by direct frequency multiplication generation gold-tinted.
At present, external relevant for the report of solid Yellow light laser.They mainly adopt dual mode to realize: the one, adopt two-beam and method (Intracavity sum-frequency generation of 3.23 Wcontinuous-wave yellow light in an Nd:YAG laser frequently, " Optics Communications ", Vol.255,2005,248-252), two technology that are to use the frequency multiplication Raman light.To have a volume big with frequently method, and power is low, and conversion efficiency is poor, and structural instability is difficult to shortcomings such as realization; The method of frequency multiplication Raman light is than simple with method frequently, and still mostly in the world at present is method (Low threshold, the diode end-pumped Nd of employing cavity external frequency multiplication Raman light 3+: GdVO 4Self-Ramanlaser, " Optical Materials ", Vol.29,2007,1817-1820) and method (Efficient all-solid-state yellow laser source producing 1.2-W average power, " Optics Letters ", the Vol.24 of intracavity frequency doubling continuous Raman light, 1999,1490-1492; All-solid-state 704 mW continuous-waveyellow source based on an intracavity, frequency-doubled crystalline Raman laser, " Optics Letters ", Vol.32,2007,1114-1116).The method of cavity external frequency multiplication Raman light causes shg efficiency poor because the power of Raman light is low outside the chamber, and the gold-tinted power of output is low; The method of intracavity frequency doubling continuous Raman light can not obtain high-power gold-tinted output then because the peak power of fundamental frequency light is low, and the conversion efficiency that converts Raman light to is poor.
(3) summary of the invention
For overcoming the defective of prior art, to realize that volume is little, cost is low, power is high, constitutionally stable Yellow light laser, the invention provides a kind of folding cavity self-raman frequency doubling completely solid yellow laser.
A kind of folding cavity self-raman frequency doubling completely solid yellow laser, comprise laser diode (LD) pumping source, resonant cavity, resonant cavity is made up of Effect of Back-Cavity Mirror, 45 degree mirrors and total reflective mirror, it is characterized in that Effect of Back-Cavity Mirror and 45 degree in the resonant cavity place gain medium, Q-modulating device and Raman crystal in the mirrors, place frequency-doubling crystal in 45 degree mirrors and the total reflective mirror; Gain medium, Q-modulating device, Raman crystal and frequency-doubling crystal carry out temperature control by cooling device to it; The pump light that is produced by the laser diode LD pumping source is coupled into gain medium and converts fundamental frequency light to, when the fundamental frequency light that produces passes through Raman crystal, stimulated Raman scattering takes place under the Raman effect effect produce Raman light, Raman light is finished the frequency multiplication process in frequency-doubling crystal, produce gold-tinted and spend mirrors output by 45.
Described laser diode LD pumping source can be LD end pumping source, and it comprises driving power, laser diode, cooling device, optical fiber and coupled lens group; Also can be LD profile pump source, it comprises driving power, LD side pumping module, cooling device.
Described resonant cavity in LD end pumping situation cavity of resorption Q-switch and the relative position of Raman crystal can change mutually; The side pumping module under LD profile pump situation in the resonant cavity and the relative position of gain medium, Q-switch and Raman crystal can be changed mutually.
Described gain medium can be a kind of in neodymium-doped (Nd) or the following all crystal of mixing ytterbium (Yb): yttrium-aluminium-garnet (YAG), vanadic acid yttrium (YVO 4), vanadic acid gadolinium (GdVO 4), vanadic acid lutetium (LuVO 4), lithium yttrium fluoride (YLF), yttrium aluminate (YAP), Gd-Ga garnet (GGG), wolframic acid gadolinium potassium (KGd (WO 4) 2) etc.; Also can be bonding crystal yttrium-aluminium-garnet/neodymium-doped yttrium-aluminum garnet (YAG/Nd:YAG), vanadic acid yttrium/Nd-doped yttrium vanadate (YVO 4/ Nd:YVO 4) a kind of in the crystal.
The doping content of described gain medium is 0.05-at.% to 3-at.% when neodymium-doped; When mixing ytterbium 0.05-at.% to 10-at.%.
Described gain medium is under LD end pumping situation, and two end face all is coated with the anti-reflection film of pump light wave band and 1000nm-1200nm wave band; Under LD profile pump situation, two end face all is coated with the anti-reflection film of 1000nm-1200nm wave band.
Described Q-modulating device can be a kind of in electric-optically Q-switched device, acousto-optic Q modulation device and the passive Q-adjusted device of saturable absorber; The acousto-optic Q modulation device is made up of radio frequency input unit and adjusting Q crystal, and the both ends of the surface of adjusting Q crystal all are coated with the anti-reflection film of 1000nm-1200nm wave band; Modulating frequency is 1-50KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect; Electric-optically Q-switched device is made up of electrooptic crystal and driving power, utilizes the electro optic effect of crystal, the phase place of passing through laser is wherein produced modulation, and then change polarization state, finishes open and close door process; Saturable absorber is to utilize the exciting of material, transition characteristic, closes the door when being excited to absorb, opens the door during transition downwards, finishes open and close gate control to laser with this.
Described cooling device has dual mode: the recirculated water cooling---crystal on side face all encases with the metal derby that has pipeline, continues to be connected with recirculated cooling water in the pipeline of metal derby, is used for reducing temperature to crystal; Semiconductor refrigerating---crystal on side face is surrounded by the semiconductor refrigerating piece.
Described Raman crystal can be tungstates (KGd (WO 4) 2, BaWO 4, SrWO 4, PbWO 4, KLu (WO 4) 2Deng), vanadic acid salt (YVO 4, GdVO 4Deng), Nitrates (Ba (NO 3) 2Deng), iodates (LiIO 3Deng) in a kind of; The both ends of the surface of Raman crystal are all plated the anti-reflection film of 1000nm-1200nm wave band.Raman crystal can effectively improve the performance of laser so as required along different directions and angle cutting.
Described frequency-doubling crystal can be potassium titanium oxide phosphate KTP, three lithium borate LBO etc.; The two ends of frequency-doubling crystal are coated with the anti-reflection film of 1000nm-1200nm wave band.Frequency-doubling crystal can cut along different directions and angle according to phase matched and other needs, can effectively improve the performance of laser like this, improves the power output of laser.
Effect of Back-Cavity Mirror in the described resonant cavity when the LD end pumping, be coated with the anti-reflection film of pump light wave band and to the reflectivity of 1000nm-1200nm wave band greater than 90% reflectance coating; When the LD profile pump, be coated with the reflectivity of 1000nm-1200nm wave band greater than 90% reflectance coating.45 degree mirrors are coated with at 1000nm-1200nm wave band reflectivity greater than 90% reflectance coating, and this film is that the light transmission scope of 590nm is greater than 80% to wavelength; Total reflective mirror is coated with at 1000nm-1200nm wave band reflectivity greater than 90% reflectance coating, and this film has reflectivity greater than 90% near the gold-tinted the 590nm.
The chamber of described resonant cavity is long to be 5cm-50cm, and the radius of curvature of the Effect of Back-Cavity Mirror of resonant cavity can be selected according to actual conditions.
The length of all crystals among the present invention all can be chosen according to specific requirement; The end surface shape of crystal and area can be determined according to the area of beam cross section.
Because Raman effect is the nonlinear effect on three rank, need fundamental frequency light to have higher peak power,, can increase the peak power of fundamental frequency light like this so we use Q-modulating device in laser, thereby improve the conversion efficiency of fundamental frequency light, effectively improved the performance of laser to Raman light.By adopting Q-regulating technique and in the chamber, using frequency-doubling crystal frequency multiplication Raman light, obtained high-power gold-tinted output.Such laser can effectively compress the Yellow light laser volume, can make full use of the high power density of Raman light in the high peak power of fundamental frequency Q impulse and the chamber, improve the stability of laser, reduced cost, and had high average output power and conversion efficiency.
The workflow of laser is as follows: the pump light that the LD pumping source sends is coupled into gain medium, and when the Q-switch of Q-modulating device was closed, pump light transferred the counter-rotating particle to and stores; When Q switching was opened, a large amount of counter-rotating particle moment of saving bit by bit transferred fundamental frequency light to by stimulated radiation; Fundamental frequency light with high peak power is through Raman crystal, because the effect of stimulated Raman scattering transfers Raman light to; Raman light is finished the frequency multiplication process at the frequency-doubling crystal place and is transferred gold-tinted to, and by 45 degree mirror outputs.
The present invention has adopted refrative cavity type and new compound mode, has adopted Q-regulating technique, and uses frequency-doubling crystal frequency multiplication Raman light in the chamber, has obtained yellow laser.Made full use of the high power density of Raman light in the high-peak power of fundamental frequency Q impulse and the chamber, and utilize refrative cavity to improve shg efficiency, improved the performance of laser, the various shortcomings of above-mentioned laser have successfully been solved, provide a kind of new small size, the complete-solid yellow light laser of good stability.Comparing in laser of the present invention and the background technology has higher power output and conversion efficiency, and volume is little, stable performance, cost are low.
(4) description of drawings
Fig. 1 is the light channel structure schematic diagram in laser LD end pumping of the present invention source, and Fig. 2 is the light channel structure schematic diagram in laser LD profile pump of the present invention source.
Wherein: 1. laser diode, 2. optical fiber, 3. coupled lens, 4. Effect of Back-Cavity Mirror, 5. gain medium, 6. Q-modulating device, 7. Raman crystal, 8.45 degree mirrors, 9. frequency-doubling crystal, 10. total reflective mirror, 11.LD side pumping module, 12. cooling devices.
(5) embodiment
Embodiment 1:
The embodiment of the invention 1 comprises laser diode LD end pumping source, resonant cavity as shown in Figure 1; Resonant cavity is made up of Effect of Back-Cavity Mirror 4,45 degree mirrors 8 and total reflective mirror 10, and gain medium 5 selects neodymium-doped yttrium-aluminum garnet Nd:YAG crystal, and Q-modulating device 6 is acousto-optic Q modulation devices, and Raman crystal 7 selects strontium tungstate SrWO 4Crystal, frequency-doubling crystal 9 is selected the potassium titanium oxide phosphate ktp crystal for use.Place successively in Effect of Back-Cavity Mirror 4 and the 45 degree mirrors 8 in gain medium 5, acousto-optic Q modulation device 6 and Raman crystal 7,45 degree mirrors 8 and the total reflective mirror 10 and place frequency-doubling crystal 9; Gain medium 5, acousto-optic Q modulation device 6, Raman crystal 7 and frequency-doubling crystal 9 sides all surround with the metal derby that has pipeline, and the pipeline in the metal derby continues to be connected with recirculated cooling water, are used for reducing temperature to crystal.
Pumping source comprises laser diode 1, optical fiber 2 and coupled lens 3, and pump light enters resonant cavity through optical fiber 2 and coupled lens 3; The output wavelength of pumping source is 808nm, and Maximum pumping is 30W, and the fiber core radius of optical fiber is 400 μ m, and numerical aperture is 0.22.
The chamber of resonant cavity is long to be 16cm.
Gain medium 5 neodymium-doped yttrium-aluminum garnet Nd:YAG crystal, be of a size of Φ 4mm * 5mm, doping content is 1-at.%, two end faces all are coated with the anti-reflection film (transmitance is greater than 99.8%) of pump light 808nm and 1000nm-1200nm wave band, and the effect of neodymium-doped yttrium-aluminum garnet Nd:YAG crystal is to produce fundamental frequency light.
Acousto-optic Q modulation device 6 is made up of radio frequency input unit and adjusting Q crystal, and the length of adjusting Q crystal is 35mm, and both ends of the surface all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Modulating frequency is 15KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
Raman crystal 7 strontium tungstate SrWO 4, be of a size of 4 * 4 * 35mm 3, both ends of the surface all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, strontium tungstate SrWO 4The effect of Raman crystal 7 is that fundamental frequency light is converted to Raman light.
Frequency-doubling crystal 9 potassium titanium oxide phosphate ktp crystals are of a size of 3 * 3 * 6mm 3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, and to the light of 587nm wavelength high saturating (transmitance is greater than 92%); In order to satisfy the phase-matching condition of crystal when 20 spend, along θ=68.7 degree, φ=0 degree angle is cut with ktp crystal for we.
Effect of Back-Cavity Mirror 4 is a concave mirror, and radius of curvature is 3000mm, is coated with the anti-reflection film of 808nm wavelength and the high-reflecting film (reflectivity is greater than 99.5%) of 1000nm-1200nm wave band.
45 degree mirrors 8 are flat mirror, are coated with the high-reflecting film (to reflectivity R>99.8% of 1064nm wavelength, to the reflectivity R=90.8% of 1180nm wavelength) of 1000nm-1200nm wave band, and this film is the light high saturating (T=90%) of 590nm to wavelength.
Total reflective mirror 10 is flat mirror, is coated with the high-reflecting film (to reflectivity R>99.8% of 1064nm wavelength, to the reflectivity R=90.8% of 1180nm wavelength) of 1000nm-1200nm wave band, and this film is the light high anti-(R=90%) of 590nm to wavelength.
The workflow of laser: the pump light that LD end pumping module 1 is sent the 808nm wavelength enters in the neodymium-doped yttrium-aluminum garnet Nd:YAG crystal through optical fiber 2 and coupled lens 3, and when acousto-optic Q modulation switch 6 cut out, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1064nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power is through strontium tungstate SrWO 4Crystal because the effect of stimulated Raman scattering transfers the 1180nm Raman light to, is converted to the 590nm gold-tinted at KTP frequency-doubling crystal 9 places owing to frequency-doubled effect, and by 8 outputs of 45 degree mirrors.
Embodiment 2:
The embodiment of the invention 2 comprises laser diode LD side pumping module 11, resonant cavity as shown in Figure 2; Resonant cavity is made up of Effect of Back-Cavity Mirror 4,45 degree mirrors 8 and total reflective mirror 10, and gain medium 5 selects neodymium-doped yttrium-aluminum garnet Nd:YAG crystal, and Q-modulating device 6 is acousto-optic Q modulation devices, and Raman crystal 7 selects barium tungstate BaWO 4Crystal, frequency-doubling crystal 9 is selected the potassium titanium oxide phosphate ktp crystal for use.Place successively in Effect of Back-Cavity Mirror 4 and the 45 degree mirrors 8 in gain medium 5, acousto-optic Q modulation device 6 and Raman crystal 7,45 degree mirrors 8 and the total reflective mirror 10 and place frequency-doubling crystal 9; Gain medium 5, acousto-optic Q modulation device 6, Raman medium 7 and frequency-doubling crystal 9 sides all surround with the metal derby that has pipeline, and the pipeline in the metal derby continues to be connected with recirculated cooling water, are used for reducing temperature to crystal.
Described laser diode LD side pumping module 11 is that near the 808nm LD side-pump laser head (peak power 180W), driving power and water-cooled case formed by wavelength.
The chamber of resonant cavity is long to be 15cm.
Gain medium 5 neodymium-doped yttrium-aluminum garnet Nd:YAG crystal, be of a size of Φ 4mm * 5mm, doping content is 1-at.%, and two end faces all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, and the effect of neodymium-doped yttrium-aluminum garnet Nd:YAG crystal is to produce fundamental frequency light.
Acousto-optic Q modulation device 6 is made up of radio frequency input unit and adjusting Q crystal, and the length of adjusting Q crystal is 35mm, and both ends of the surface all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Modulating frequency is 15KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
Raman crystal 7 barium tungstate BaWO 4, be of a size of 5 * 5 * 46.6mm 3, both ends of the surface all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, barium tungstate BaWO 4The effect of Raman crystal 7 is that fundamental frequency light is converted to Raman light.
Frequency-doubling crystal 9 potassium titanium oxide phosphate ktp crystals are of a size of 3 * 3 * 6mm 3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, and to the light of 587nm wavelength high saturating (transmitance is greater than 92%); Is 20 phase-matching conditions when spending in order to satisfy crystal in temperature, we with ktp crystal along θ=68.7 degree, φ=0 degree angle cutting.
Effect of Back-Cavity Mirror 4 is thin convex lens, and radius of curvature is 800mm, is coated with the high-reflecting film (reflectivity is greater than 99.5%) of 1000nm-1200nm wave band.
45 degree mirrors 8 are flat mirror, are coated with the high-reflecting film (to reflectivity R>99.8% of 1064nm wavelength, to the reflectivity R=90.8% of 1180nm wavelength) of 1000nm-1200nm wavelength, and this film is the light high saturating (T=90%) of 590nm to wavelength.
Total reflective mirror 10 is flat mirror, is coated with the high-reflecting film (to reflectivity R>99.8% of 1064nm wavelength, to the reflectivity R=90.8% of 1180nm wavelength) of 1000nm-1200nm wavelength, and this film is the light high anti-(R=90%) of 590nm to wavelength.
The workflow of laser: the pump light that the 808nm wavelength is sent in LD profile pump source is coupled in the neodymium-doped yttrium-aluminum garnet Nd:YAG crystal, and when acousto-optic Q modulation switch 6 cut out, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1064nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power is through barium tungstate BaWO 4During crystal,, be converted to the 590nm gold-tinted owing to frequency-doubled effect at KTP frequency-doubling crystal 9 places because the effect of stimulated Raman scattering transfers the 1180nm Raman light to, and by 8 outputs of 45 degree mirrors.
Embodiment 3:
Identical with embodiment 1, be that described Raman crystal 7 is vanadic acid gadolinium GdVO 4Crystal is of a size of 3 * 3 * 15mm 3, along a direction of principal axis cutting of physics definition, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Gain medium 5 neodymium-doped yttrium-aluminum garnet Nd:YAG crystal doping concentration are 1.5-at.%.Place successively in Effect of Back-Cavity Mirror 4 and the 45 degree mirrors 8 in gain medium 5, Raman crystal 7 and acousto-optic Q-modulating device 6,45 degree mirrors 8 and the total reflective mirror 10 and place frequency-doubling crystal 9, the chamber of resonant cavity is long to be 13cm.
Embodiment 4:
Identical with embodiment 1, be that described Raman crystal 7 is wolframic acid lutetium potassium KLu (WO 4) 2Crystal is of a size of 3 * 3 * 16mm 3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Place successively in Effect of Back-Cavity Mirror 4 and the 45 degree mirrors 8 in gain medium 5, acousto-optic Q modulation device 6 and Raman medium 7,45 degree mirrors 8 and the total reflective mirror 10 and place frequency-doubling crystal 9, the chamber of resonant cavity is long to be 15cm.
Embodiment 5:
Identical with embodiment 1, be described gain medium 5 are Nd-doped yttrium vanadate Nd:YVO 4Crystal, its doping content is 0.5%, is of a size of 3mm * 3mm * 8mm, the both ends of the surface of gain medium are coated with the anti-reflection film (transmitance is greater than 99.8%) of 808nm and 1000nm-1200nm.Described Raman crystal 7 is wolframic acid lutetium potassium KLu (WO 4) 2Crystal is of a size of 3 * 3 * 16mm 3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Place successively in Effect of Back-Cavity Mirror 4 and the 45 degree mirrors 8 in gain medium 5, acousto-optic Q modulation device 6 and Raman medium 7,45 degree mirrors 8 and the total reflective mirror 10 and place frequency-doubling crystal 9, the chamber of resonant cavity is long to be 16cm.
Embodiment 6:
Identical with embodiment 1, be that described Raman crystal 7 is strontium tungstate SrWO 4Crystal is of a size of 4 * 4 * 35mm 3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.Place successively in Effect of Back-Cavity Mirror 4 and the 45 degree mirrors 8 in gain medium 5, acousto-optic Q modulation device 6 and Raman crystal 7,45 degree mirrors 8 and the total reflective mirror 10 and place frequency-doubling crystal 9, the chamber of resonant cavity is long to be 12cm.Q-switch is an acousto-optic Q modulation, and modulating frequency is 20KHz.
Embodiment 7:
Identical with embodiment 1, be that described Raman crystal 7 is lead tungstate PbWO 4Crystal is of a size of 3 * 3 * 16mm 3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.Q-modulating device 6 is Cr 4+: YAG saturable absorber passive Q-switch, its small-signal transmitance is 90%, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Place successively in Effect of Back-Cavity Mirror 4 and the 45 degree mirrors 8 in gain medium 5, acousto-optic Q modulation device 6 and Raman crystal 7,45 degree mirrors 8 and the total reflective mirror 10 and place frequency-doubling crystal 9, the chamber of resonant cavity is long to be 13cm.
Embodiment 8:
Identical with embodiment 2, be that described Raman crystal 7 is wolframic acid gadolinium potassium KGd (WO 4) 2Crystal is of a size of 4 * 4 * 35mm 3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Described frequency-doubling crystal 9 is three lithium borate lbo crystals, and the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.Place successively in Effect of Back-Cavity Mirror 4 and the 45 degree mirrors 8 in acousto-optic Q modulation device 6, gain medium 5 and Raman medium 7,45 degree mirrors 8 and the total reflective mirror 10 and place frequency-doubling crystal 9, the chamber of resonant cavity is long to be 15cm.Q-switch is an acousto-optic Q modulation, and modulating frequency is 10KHz.
Embodiment 9:
Identical with embodiment 1, be described gain medium 5 are bonding Nd-doped yttrium vanadate (YVO 4/ Nd:YVO 4), its doping content is 0.5%, is of a size of 3mm * 3mm * 3mm (YVO 4)+3mm * 3mm * 8mm (Nd:YVO 4), the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 808nm wavelength and 1000nm-1200nm wave band.Described Raman crystal 7 is barium nitrate Ba (NO 3) 2Crystal, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.Place successively in Effect of Back-Cavity Mirror 4 and the 45 degree mirrors 8 in gain medium 5, acousto-optic Q modulation device 6 and Raman medium 7,45 degree mirrors 8 and the total reflective mirror 10 and place frequency-doubling crystal 9, the chamber of resonant cavity is long to be 13cm.
Example 10:
Identical with embodiment 1, be described gain medium 5 for mixing ytterbium yttrium-aluminium-garnet Yb:YAG crystal, be of a size of 5 * 5 * 1mm 3, doping content is 3-at.%; Raman crystal 7 is vanadic acid gadolinium GdVO 4Crystal is of a size of 3 * 3 * 15mm 3, along a direction of principal axis cutting of physics definition, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.The output wavelength of pumping source is 940nm, and the fiber core radius of optical fiber is 100 μ m.Place successively in Effect of Back-Cavity Mirror 4 and the 45 degree mirrors 8 in gain medium 5, acousto-optic Q modulation device 6 and Raman medium 7,45 degree mirrors 8 and the total reflective mirror 10 and place frequency-doubling crystal 9, the chamber of resonant cavity is long to be 13cm.
All crystals among above-mentioned ten embodiment all passes through water-cooling system 11 temperature controls, and water temperature is 20 degree.

Claims (10)

1. folding cavity self-raman frequency doubling completely solid yellow laser, comprise laser diode LD pumping source, resonant cavity, resonant cavity is made up of Effect of Back-Cavity Mirror, 45 degree mirrors and total reflective mirror, it is characterized in that Effect of Back-Cavity Mirror and 45 degree in the resonant cavity place gain medium, Q-modulating device and Raman crystal in the mirrors, place frequency-doubling crystal in 45 degree mirrors and the total reflective mirror; Gain medium, Q-modulating device, Raman crystal and frequency-doubling crystal carry out temperature control by cooling device to it; The pump light that is produced by the laser diode LD pumping source is coupled into gain medium and converts fundamental frequency light to, when the fundamental frequency light that produces passes through Raman crystal, stimulated Raman scattering takes place under the Raman effect effect produce Raman light, Raman light is finished the frequency multiplication process in frequency-doubling crystal, produce gold-tinted and spend mirrors output by 45.
2. folding cavity self-raman frequency doubling completely solid yellow laser as claimed in claim 1, it is characterized in that described laser diode LD pumping source can be LD end pumping source, it comprises driving power, laser diode, cooling device, optical fiber and coupled lens group; Also can be LD profile pump source, it comprises driving power, LD side pumping module, cooling device.
3. folding cavity self-raman frequency doubling completely solid yellow laser as claimed in claim 1, it is characterized in that described resonant cavity in LD end pumping situation cavity of resorption Q-switch and the relative position of Raman crystal can change mutually; The side pumping module under LD profile pump situation in the resonant cavity and the relative position of gain medium, Q-switch and Raman crystal can be changed mutually.
4. folding cavity self-raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described gain medium can be a kind of in neodymium-doped or the following all crystal of mixing ytterbium: yttrium-aluminium-garnet, vanadic acid yttrium, vanadic acid gadolinium, vanadic acid lutetium, lithium yttrium fluoride, yttrium aluminate, Gd-Ga garnet, wolframic acid gadolinium potassium; Also can be a kind of in bonding crystal yttrium-aluminium-garnet/neodymium-doped yttrium-aluminum garnet, the vanadic acid yttrium/Nd-doped yttrium vanadate crystal.
5. as claim 1 or 4 described folding cavity self-raman frequency doubling completely solid yellow lasers, the doping content that it is characterized in that described gain medium is 0.05-at.% to 3-at.% when neodymium-doped; When mixing ytterbium 0.05-at.% to 10-at.%.
6. folding cavity self-raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described gain medium under LD end pumping situation, and two end face all is coated with the anti-reflection film of pump light wave band and 1000nm-1200nm wave band; Under LD profile pump situation, two end face all is coated with the anti-reflection film of 1000nm-1200nm wave band.
7. folding cavity self-raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described Q-modulating device can be a kind of in electric-optically Q-switched device, acousto-optic Q modulation device and the passive Q-adjusted device of saturable absorber.
8. folding cavity self-raman frequency doubling completely solid yellow laser as claimed in claim 1, it is characterized in that described Raman crystal can tungstates, a kind of in the vanadic acid salt, Nitrates, all crystal of iodates; The both ends of the surface of Raman crystal are all plated the anti-reflection film of 1000nm-1200nm wave band.
9. folding cavity self-raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described frequency-doubling crystal can be a kind of among potassium titanium oxide phosphate KTP, the three lithium borate LBO; The two ends of frequency-doubling crystal are coated with the anti-reflection film of 1000nm-1200nm wave band.
10. folding cavity self-raman frequency doubling completely solid yellow laser as claimed in claim 1, it is characterized in that Effect of Back-Cavity Mirror in the described resonant cavity is coated with the anti-reflection film of pump light wave band when the LD end pumping and to the reflectivity of 1000nm-1200nm wave band greater than 90% reflectance coating; When the LD profile pump, be coated with the reflectivity of 1000nm-1200nm wave band greater than 90% reflectance coating; 45 degree mirrors are coated with at 1000nm-1200nm wave band reflectivity greater than 90% reflectance coating, and this film is that the light transmission rate of 590nm is greater than 80% to wavelength; Total reflective mirror is coated with at 1000nm-1200nm wave band reflectivity greater than 90% reflectance coating, and this film has reflectivity greater than 90% near the gold-tinted the 590nm.
CNA2008101380303A 2008-06-30 2008-06-30 Folding cavity self-raman frequency doubling completely solid yellow laser Pending CN101308994A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103618206A (en) * 2013-11-28 2014-03-05 清华大学 Full-solid-state single longitudinal mode yellow light laser
CN103996968B (en) * 2014-05-27 2017-04-05 天津大学 A kind of compound cavity configuration from Raman Yellow light laser
CN113224629A (en) * 2021-04-13 2021-08-06 华南理工大学 Tunable single-frequency Raman laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103618206A (en) * 2013-11-28 2014-03-05 清华大学 Full-solid-state single longitudinal mode yellow light laser
CN103996968B (en) * 2014-05-27 2017-04-05 天津大学 A kind of compound cavity configuration from Raman Yellow light laser
CN113224629A (en) * 2021-04-13 2021-08-06 华南理工大学 Tunable single-frequency Raman laser

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