CN107623251A - Space overlapping high-power semiconductor laser for laser melting coating folds array 1 system - Google Patents
Space overlapping high-power semiconductor laser for laser melting coating folds array 1 system Download PDFInfo
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- CN107623251A CN107623251A CN201710842812.4A CN201710842812A CN107623251A CN 107623251 A CN107623251 A CN 107623251A CN 201710842812 A CN201710842812 A CN 201710842812A CN 107623251 A CN107623251 A CN 107623251A
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Abstract
The invention discloses a kind of space overlapping high-power semiconductor laser for laser melting coating to fold array 1 system, belong to laser technology field, it is characterized in that 4 tunnel laser stacking arrays are effectively spatially superimposed as into two groups by periodic spatial coupling mirror is combined output high-power linearly polarized light to facilitate addition feedback light shielding system, laser output facula size and shape of cross section are adjustable, can meet laser melting coating application demand.
Description
Technical field
The invention belongs to laser technology field, and in particular to a kind of space overlapping high power semiconductor for laser melting coating
Laser stacking array system, the high-power semiconductor laser exported by 4 groups of space overlapping coupling composition myriawatts fold array 1 system, this myriawatt
High power laser system can increase wealth manufacture extensively using laser heat treatment and laser.
Background technology
Laser melting coating is that laser increases an important component in wealth manufacture, refers to be applied in a manner of different fillers
The coating material of selection is placed on matrix surface, is allowed to and matrix surface a thin layer while melts through laser irradiation, and fast rapid hardening
Form that dilution factor is extremely low and face coat with matrix material into metallurgical binding after Gu, so as to significantly improve substrate material surface
The process of wear-resisting, anti-corrosion, heat-resisting, the anti-oxidant and opering characteristic of electric apparatus etc..Light melting and coating technique is the 1970s with big work(
The development of rate laser and a kind of new process for modifying surface risen, referring to laser surface deposition technology is acted in laser beam
Lower that alloy powder or ceramic powders are heated and melted rapidly with matrix surface, light beam removes rear self-excitation and is cooled into dilution rate pole
It is low, with matrix material be in metallurgical binding face coat, so as to significantly improve matrix surface it is wear-resisting, it is anti-corrosion, heat-resisting, anti-oxidant and
A kind of surface reinforcing method laser of electrical characteristic etc. because brightness is high, power density is high, heat effect region is small, make by material processing
With the time is short, process velocity is fast, noncontact processing, worn without " cutter ", without " cutting force " act on workpiece can to various metals,
Nonmetallic processing, particularly high rigidity, high fragility and materials with high melting point and digital control system, which are matched somebody with somebody, is combined into laser machining centre, hot shadow
It is small to ring area, workpiece deformation is small, small efficiency high, the crudy of producing of following process amount is reliable and stable, solves many conventional methods
Insurmountable problem, substantially increases operating efficiency and crudy.In laser melting coating industry, semiconductor laser due to
Small volume, light weight, efficiency high, long lifespan and extensive attention that is cost-effective and causing people.Industrial in recent years partly leads
The power of body laser and greatly improving for efficiency, it is allowed to the application in material process field and is greatly paid close attention to.
Because commercial Application laser output power improves constantly, and high laser output power is obtained, vertically fold battle array
As current preferred structure.The major technical challenge of vertical folded battle array encapsulation is beam quality, spectrum control and polarization characteristic
Control problem, vertically caused heat interferes, uneven water flow distribution causes bar bar between each bar of bar of folded array semiconductor laser
The uneven wave length shift and spectrum widening that will all cause bar bar of chilling temperature.Beam Control include output facula size Control,
Optical intensity density equal control and beam Propagation direction controlling, it is therefore desirable to design and installation beam shaping and superposition coupled system,
To ensure high-power output, beam quality and point to control.
At present, in order to obtain high laser output power, two semiconductor lasers is generally folded into battle array and pass through polarization coupled mirror
Stack up.In existing semiconductor laser folds structure of the battle array by polariscope coupling superposition, generally two semiconductors are swashed
Light is folded battle array and is disposed vertically, and output light is horizontal polarization, to realize polariscope coupling superposition, will wherein being provided with the optical path all the way
It is put into 1/2 wave plate to be used to the road laser polarization direction being rotated by 90 ° to be changed into vertical polarization, and two semiconductor lasers fold battle array
One polariscope is installed on the interface of light path to be used to two-way laser coupling superposition by polariscope.The polariscopic use
It is primarily present following three problems：1) polariscope in the optical path should be by 59.4 ° of placements of Brewster's angle, but the angle is in reality
It is difficult to control in manufacturing process, the micro- of angle can make it that energy loss is excessive partially；2) polariscope may be alternatively configured 45 degree of normal incidences,
But under this angle, its film layer design comparison is complicated, is difficult to realize in technique, and normally result loss is bigger.3) light of output
It is not linearly polarized light, laser internal components can not be effectively protected by adding feedback protection system.Meanwhile partly leading
Volumetric laser folds the generally glued installation of 0 grade of 1/2 wave plate set in battle array light path, high power laser light by when it is fragile.Two folded battle arrays
Synthesize power output maximum only 5KW.
The content of the invention
For defect present in above-mentioned prior art or deficiency and reach myriawatt power output and melted with greatly improving laser
Cover and laser heat treatment process velocity, the technical problem to be solved in the present invention is to provide a kind of space overlapping for laser melting coating
High-power semiconductor laser folds array 1 system.
To achieve these goals, the present invention, which adopts the following technical scheme that, is solved：Space for laser melting coating
It is superimposed high-power semiconductor laser and folds array 1 system, including the first semiconductor laser folds battle array group (1), the second semiconductor laser folds battle array group
(2)；First semiconductor laser, which folds battle array group (1), includes the folded battle array 2 of the folded semiconductor of battle array 1 and second of the first semiconductor；Second semiconductor is folded
Battle array group (2) includes the 3rd semiconductor and folds battle array 1 ' and the folded battle array 2 ' of the 3rd semiconductor.First semiconductor laser folds battle array 1, the second half
Conductor Laser folds battle array 2, the 3rd semiconductor folds battle array 1 ' and the 4th semiconductor and folds battle array 2 ' by multiple semiconductor lasers bar article along fast axle
Direction is formed by stacking, and the semiconductor laser bar bar quantity that four folded battle arrays include is identical；Characterized in that, it is fast also to include first
Axle collimation lens set (3), the second fast axis collimation lens group (4), the 3rd fast axis collimation lens group (3 '), the 4th fast axis collimation lens
Group (4 ')；First slow axis collimation lens array group (5), the second slow axis collimation lens array group (6), the 3rd slow axis collimation lens row
Battle array group (5 '), the 4th slow axis collimation lens array group (6 ')；Period 1 property Space Coupling mirror (7), Secondary periodicity space coupling
Close mirror (7 ')；First slow axis beam-expanding system (8), the second slow axis beam-expanding system (8 '), integral mirror (9)；Wherein：
The first fast axis collimation lens group (3), the second fast axis collimation lens group (4), the 3rd fast axis collimation lens group
(3 ') and the 4th fast axis collimation lens group (4 ') form by multiple collimation lenses；The quantity of first fast axis collimation lens group (3)
The quantity that semiconductor laser bar bar in battle array (1) is folded with the first semiconductor laser is identical；Collimated in second fast axis collimation lens group (4)
The quantity that the quantity of lens folds semiconductor laser bar bar in battle array (2) with the second semiconductor laser is identical；3rd fast axis collimation lens
The quantity that the quantity of group (3 ') folds semiconductor laser bar bar in battle array (1 ') with three semiconductor lasers is identical；4th fast axis collimation lens
The quantity of collimation lens is identical with the quantity of semiconductor laser bar article in the folded battle array (2 ') of the 4th semiconductor laser in group (4 ')；First
Slow axis collimation lens array group (5), the second slow axis collimation lens array group (6), the 3rd slow axis collimation lens array group (5 ') and
4th slow axis collimation lens array group (6 ') forms by multiple collimation lens arrays；First slow axis collimation lens array group (5)
The quantity that the quantity of middle collimation lens array folds semiconductor laser bar bar in battle array (1) with the first semiconductor laser is identical；Second is slow
The quantity of collimation lens array folds semiconductor laser bar in battle array (2) with the second semiconductor laser in axle collimation lens array group (6)
The quantity of bar is identical；The quantity of collimation lens array is folded with the first semiconductor laser in 3rd slow axis collimation lens array group (5 ')
The quantity of semiconductor laser bar bar is identical in battle array (1 ')；The number of collimation lens array in 4th slow axis collimation lens array group (6 ')
Measure identical with the quantity of semiconductor laser bar article in the folded battle array (2 ') of the 4th semiconductor laser.
Each collimation lens in the first fast axis collimation lens group (3) folds battle array (1) relative to the first semiconductor laser
In corresponding semiconductor laser bar bar is parallel and concentric placement, and distance between the two is the focal length of the collimation lens；Second
Each collimation lens in fast axis collimation lens group (4) folds corresponding semiconductor laser bar in battle array (2) with the second semiconductor laser
Bar is parallel and concentric placement, and distance between the two is the focal length of fast axis collimation lens；3rd fast axis collimation lens group (3 ')
In each collimation lens relative to the first semiconductor laser fold battle array (1 ') in corresponding semiconductor laser bar bar it is parallel and concentric
Place, and distance between the two is the focal length of the collimation lens；Each collimation in 4th fast axis collimation lens group (4 ') is saturating
Mirror and the second semiconductor laser fold that corresponding semiconductor laser bar bar in battle array (2 ') is parallel and concentric placement, and between the two away from
From the focal length for fast axis collimation lens.Each collimation lens array of first slow axis collimation lens array group (5) is relative to first
Semiconductor laser folds that bar bar corresponding in battle array is parallel and concentric placement, and distance between the two is the slow axis collimation lens array
Focal length；Each collimation lens array of second slow axis collimation lens array group (6) folds battle array relative to the second semiconductor laser
In corresponding bar bar is parallel and concentric placement, and distance between the two is the focal length of the slow axis collimation lens array；3rd
Each collimation lens array of slow axis collimation lens array group (5 ') folds corresponding bar bar in battle array relative to the first semiconductor laser
Parallel and concentric placement, and distance between the two is the focal length of the slow axis collimation lens array；4th slow axis collimation lens arranges
Each collimation lens array of battle array group (6 ') is parallel and concentric relative to bar bar corresponding in the folded battle array of the second semiconductor laser
Place, and distance between the two is the focal length of the slow axis collimation lens array；
First semiconductor laser folds the light beam that sends of battle array (1) successively through the first fast axis collimation lens group (3), first slow
Axle collimation lens array group (5) turns into the first directional light after being collimated on fast, slow-axis direction, by each in the first directional light
The size for the light beam that semiconductor laser bar bar is sent is half bar stripe pitch；Second semiconductor laser folds what battle array (2) was sent
Light beam carries out accurate through the second fast axis collimation lens group (4), the second slow axis collimation lens array group (6) in fast, slow-axis direction successively
Turn into the second directional light after straight, the size of the light beam sent in the second directional light by each semiconductor laser bar bar is half
Bar stripe pitch；Face where periodic spatial coupling mirror (7) and the first directional light, the angle of the second directional light are 45 °, and first is flat
Row light all passes through through periodic spatial coupling mirror (7), and the second directional light is with perpendicular to the direction of the first directional light arrival cycle
Property Space Coupling mirror, after periodic spatial coupling mirror (7) carries out 45 ° of reflections, with passing through the of periodic spatial coupling mirror (7)
One directional light is in the same direction and is overlapped mutually, and superposition light beam expands multiple through slow axis beam-expanding system (8) adjustment slow axis turns into I combined beam
Collimated light beam；3rd semiconductor laser folds the light beam that sends of battle array (1 ') successively through the 3rd fast axis collimation lens group (3 '), the
Three slow axis collimation lens array groups (5 ') turn into the 3rd directional light after being collimated on fast, slow-axis direction, in the 3rd directional light
The size of the light beam sent by each semiconductor laser bar bar is half bar stripe pitch；4th semiconductor laser folds battle array (2 ')
The light beam sent is successively through the 4th fast axis collimation lens group (4 '), the 4th slow axis collimation lens array group (6 ') in fast, slow axis side
To turning into the 4th directional light after being collimated, the size of the light beam sent in the 4th directional light by each semiconductor laser bar article is
Half bar stripe pitch；Face and the angle of the 3rd directional light, the 4th directional light are where periodic spatial coupling mirror (7 ')
45 °, the 3rd directional light all passes through through periodic spatial coupling mirror (7 '), and the 4th directional light is with perpendicular to the side of the 3rd directional light
To periodic spatial coupling mirror is reached, after periodic spatial coupling mirror (7 ') carries out 45 ° of reflections, with passing through periodic spatial coupling
Close the 3rd directional light of mirror (7 ') in the same direction and be overlapped mutually, superposition light beam expands multiple through slow axis beam-expanding system (8 ') adjustment slow axis
As II combined beam collimated light beam.Finally integrated mirror (9) is closed for I combined beam collimated light beam and II combined beam collimated light beam
Exported into strip light spots are focused into.
Present invention additionally comprises following other technical characteristics：
Described two periodic spatial coupling mirrors are periodicity device, in one cycle above 1/2 cycle be 45 ° complete
Thoroughly, 1/2 cycle, 45 ° of height were anti-below, and one periodic width is equal with the spacing of semiconductor laser bar bar.
Described two periodic spatial coupling mirrors by multiple 45 ° of speculums of half bar stripe pitch width by two/
One bar of stripe pitch, which is arranged and is fixed as one, to be formed, or is etched and formed in the horizontal direction with laser using 45 ° of speculums of a monoblock.
The system also includes two feedback light insulation blocking systems being made up of polariscope, quarter-wave plate and light stopper
System, the polariscope and quarter-wave plate are arranged between slow axis beam-expanding system and condenser lens, polariscope and periodically sky
Between coupling mirror be arranged in parallel, light stopper is arranged on polariscopic side；Light beam after slow axis beam-expanding system first reaches polariscope,
The light of polariscopic horizontal polarization rotates 45 degree by quarter-wave plate polarization direction, is reflected by workpieces processing surface
45 degree are rotated again again by the quarter-wave plate polarization direction afterwards, pass twice through the quarter-wave plate polarization direction work rotation
It turn 90 degrees, i.e., vertical polarization is become by horizontal polarization, arrive again at after polariscope by high instead to frequency modulated light device, light stopper is by above-mentioned light
Beam exports.
Each semiconductor laser bar bar is in fast axle in the folded battle array of the folded semiconductor laser of battle array 1 and second of first semiconductor laser
Beam sizes after the collimation of direction are half bar stripe pitch, and the second semiconductor laser folds the ratio first on quick shaft direction of battle array 2
Semiconductor laser folds battle array 1 and is higher by half bar stripe pitch；Periodic spatial coupling mirror folds battle array fast than the second semiconductor laser
Direction of principal axis is higher by a quarter bar stripe pitch, and folding battle array than the first semiconductor laser is higher by quick shaft direction between 3/4ths bars of bars
Away from.
3rd semiconductor laser folds battle array 1 ' and the 4th semiconductor laser is folded each semiconductor laser bar article in battle array 2 ' and existed
Beam sizes after quick shaft direction collimation are half bar stripe pitch, and the two or four semiconductor laser folds battle array 2 ' on quick shaft direction
Battle array 1 ', which is folded, than the 3rd semiconductor laser is higher by half bar stripe pitch；Secondary periodicity Space Coupling mirror swashs than the 4th semiconductor
Light folds battle array and is higher by a quarter bar stripe pitch in quick shaft direction, and fold battle array than the 3rd semiconductor laser is higher by four points on quick shaft direction
Three bars of stripe pitch.
The light stopper scribbles black using 45 degree of taper concave metallic blocks are provided with its concave surface.
Described first, second, third and the 4th conductor Laser fold battle array and use 25 half by 976nm, power for 120W
3000 watts of the folded battle array that conductor Laser bar bar is formed by stacking along quick shaft direction.
Compared with folding array 1 system with existing semiconductor laser, advantages of the present invention is as follows：
1st, battle array is folded as light source using two semiconductor lasers, after the standard successively through speed direction of principal axis, pass through periodically
Space Coupling mirror coupled room be superimposed, ensure that high power line polarization output uniform light spots output, also cause add feedback light every
Become feasible from protection system to avoid suffering damage inside laser.
2nd, space merges four folded battle arrays two-by-two and the power output of parallel superposing type reaches myriawatt
3rd, the system that the setting for the feedback light insulation blocking system being made up of polariscope, quarter-wave plate and light stopper makes
Work safety is stable, and can improve system service life.
4th, the setting of slow axis beam-expanding system can realize the uniform adjustable strip light spots that processing needs.
5th, the setting of condenser lens can realize that laser power density is adjustable in workpieces processing.
6th, it is simple and compact for structure, efficiency high, stable performance, it is easily installed and debugs.
Brief description of the drawings
Fig. 1 is that the space overlapping coupling myriawatt high-power semiconductor laser of the present invention folds the structure principle chart of array 1 system；
Fig. 2 is that the first semiconductor laser folds battle array in embodiment or the second semiconductor laser folds the structural representation of battle array, folds battle array
Including 25 semiconductor laser bar bars；
Fig. 3 is the structural representation of periodic spatial coupling mirror in embodiment, including 25 cycles；
Fig. 4 is that the first semiconductor laser folds battle array, the second semiconductor laser folds battle array and periodic spatial coupling mirror in embodiment
Spatial distribution schematic diagram on quick shaft direction；
The schematic diagram for the feedback light insulation blocking system that Fig. 5 is made up of polariscope, quarter-wave plate and light stopper.
Embodiment
The embodiment of the present invention is described further below in conjunction with the accompanying drawings.Herein it should be noted that for
The explanation of these embodiments is used to help understand the present invention, but does not form limitation of the invention.It is in addition, disclosed below
As long as each embodiment of the invention in involved technical characteristic do not form conflict can each other and be mutually combined.
As shown in figure 1, the space overlapping high-power semiconductor laser that is used for of the present invention folds array 1 system, including the first semiconductor
Laser stacking array group (1), the second semiconductor laser fold battle array group (2)；First semiconductor laser is folded battle array group (1) and folded including the first semiconductor
The semiconductor of battle array 1 and second folds battle array 2；Second semiconductor, which folds battle array group (2), includes the folded battle array 1 ' of the 3rd semiconductor and the folded battle array of the 3rd semiconductor
2′；It is first fast axis collimation lens group (3), the second fast axis collimation lens group (4), the 3rd fast axis collimation lens group (3 '), the 4th fast
Axle collimation lens set (4 ')；First slow axis collimation lens array group (5), the second slow axis collimation lens array group (6), the 3rd slow axis
Collimation lens array group (5 '), the 4th slow axis collimation lens array group (6 ')；Period 1 property Space Coupling mirror (7), second week
Phase property Space Coupling mirror (7 ')；First slow axis beam-expanding system (8), the second slow axis beam-expanding system (8 '), integral mirror (9)；Polariscope
11 and 11 ', quarter-wave plate 12 and 12 ' and light stopper 13 and 13 '.
As shown in Fig. 2 the first semiconductor laser is folded, the semiconductor laser of battle array 1 and second folds battle array 2, the 3rd semiconductor laser folds battle array
1 ' and the 4th semiconductor laser fold battle array 2 ' and be formed by stacking by multiple semiconductor lasers bar article along quick shaft direction, and four folded battle arrays
Comprising semiconductor laser bar bar quantity it is identical；The wavelength and power of semiconductor laser bar bar need true according to laser system output
It is fixed.
First fast axis collimation lens group 3 and the second fast axis collimation lens group 4 form by multiple collimation lenses；First fast axle
The quantity that the quantity of collimation lens set 3 folds semiconductor laser bar bar in battle array 1 with the first semiconductor laser is identical.Second fast axis collimation
The quantity of collimation lens is identical with the quantity of semiconductor laser bar bar in the folded battle array 2 of the second semiconductor laser in lens group 4.First is slow
Axle collimation lens array group 5 and the second slow axis collimation lens array group 6 form by multiple collimation lens arrays；First slow axis is accurate
The quantity of collimation lens array folds the quantity of semiconductor laser bar bar in battle array 1 with the first semiconductor laser in straight lens array group 5
It is identical.The quantity of collimation lens array folds semiconductor in battle array 2 with the second semiconductor laser in second slow axis collimation lens array group 6
The quantity of laser bar bar is identical.Collimation lens is conventional optics, can be selected as needed.
Wherein, the first fast axis collimation lens group (3), the second fast axis collimation lens group (4), the 3rd fast axis collimation lens group
(3 ') and the 4th fast axis collimation lens group (4 ') form by multiple collimation lenses；The quantity of first fast axis collimation lens group (3)
The quantity that semiconductor laser bar bar in battle array (1) is folded with the first semiconductor laser is identical；Collimated in second fast axis collimation lens group (4)
The quantity that the quantity of lens folds semiconductor laser bar bar in battle array (2) with the second semiconductor laser is identical；3rd fast axis collimation lens
The quantity that the quantity of group (3 ') folds semiconductor laser bar bar in battle array (1 ') with three semiconductor lasers is identical；4th fast axis collimation lens
The quantity of collimation lens is identical with the quantity of semiconductor laser bar article in the folded battle array (2 ') of the 4th semiconductor laser in group (4 ')；First
Slow axis collimation lens array group (5), the second slow axis collimation lens array group (6), the 3rd slow axis collimation lens array group (5 ') and
4th slow axis collimation lens array group (6 ') forms by multiple collimation lens arrays；First slow axis collimation lens array group (5)
The quantity that the quantity of middle collimation lens array folds semiconductor laser bar bar in battle array (1) with the first semiconductor laser is identical；Second is slow
The quantity of collimation lens array folds semiconductor laser bar in battle array (2) with the second semiconductor laser in axle collimation lens array group (6)
The quantity of bar is identical；The quantity of collimation lens array is folded with the first semiconductor laser in 3rd slow axis collimation lens array group (5 ')
The quantity of semiconductor laser bar bar is identical in battle array (1 ')；The number of collimation lens array in 4th slow axis collimation lens array group (6 ')
Measure identical with the quantity of semiconductor laser bar article in the folded battle array (2 ') of the 4th semiconductor laser..
Periodic spatial coupling mirror 7 and 7 ', as shown in figure 3, in a cycle of periodic spatial coupling mirror, above 1/2
Cycle is 45 ° of full impregnateds, below 1/2 cycle, 45 ° of height it is anti-, a cycle width is equal with bar stripe pitch.During actual fabrication, it can use
Multiple 45 ° of speculums of half bar stripe pitch width are arranged and are fixed as one by half bar stripe pitch, can also be adopted
Etched to be formed in the horizontal direction with laser with 45 ° of speculums of a monoblock, the cycle is bar stripe pitch.
Slow axis beam-expanding system 8 and 8 ' is the Thorlabs of conventional optics, at present the supplier such as U.S., German
LIMO, Chinese Dayoptics etc., it can be selected as needed.
Integral mirror 9, polariscope 11, quarter-wave plate 12 are conventional optics, and supplier is such as the U.S. at present
Thorlabs, German LIMO, Chinese Dayoptics etc., can be selected as needed.Polariscope 11 and 11 ' respectively with
Periodic spatial coupling mirror 7 and 7 ' be arranged in parallel.
Light stopper 13 and 13 ' is separately positioned on the side of polariscope 11 and 11 '.
As Figure 1 and Figure 4, the first semiconductor laser fold the light beam that sends of battle array 1 successively through the first fast axis collimation lens group 3,
First slow axis collimation lens array group 5 turns into the first directional light after being collimated on fast, slow-axis direction, in the first directional light by
The size for the light beam that each semiconductor laser bar bar is sent is half bar stripe pitch；Second semiconductor laser is folded battle array 2 and sent
Light beam collimated successively through the second fast axis collimation lens group 4, the second slow axis collimation lens array group 6 in fast, slow-axis direction
Turn into the second directional light afterwards, the size of the light beam sent in the second directional light by each semiconductor laser bar bar is half bar
Stripe pitch；First directional light all passes through through periodic spatial coupling mirror 7, and the second directional light is with perpendicular to the side of the first directional light
To periodic spatial coupling mirror is reached, after periodic spatial coupling mirror 7 carries out 45 ° of reflections, coupled with by periodic spatial
First directional light of mirror 7 is in the same direction and is overlapped mutually, and superposition light beam adjusts slow axis through slow axis beam-expanding system 8 and expands multiple；Then pass through
Entering quarter-wave plate 12 after polariscope 11 turns into Group I directional light；3rd semiconductor laser fold the light beam that sends of battle array 1 ' according to
It is secondary after the 3rd fast axis collimation lens group 3 ', the 3rd slow axis collimation lens array group 5 ' are collimated on fast, slow-axis direction into
For the 3rd directional light, the size of the light beam sent in the 3rd directional light by each semiconductor laser bar article is between half bar article
Away from；The light beam that the folded battle array 2 ' of 4th semiconductor laser is sent is successively through the second fast axis collimation lens group 4 ', the 4th slow axis collimation lens
Array group 6 ' turns into the 4th directional light after fast, slow-axis direction is collimated, by each semiconductor laser bar in the 4th directional light
The size for the light beam that bar is sent is half bar stripe pitch；3rd directional light all passes through through periodic spatial coupling mirror 7 ',
4th directional light is entered with reaching periodic spatial coupling mirror perpendicular to the direction of the 3rd directional light through periodic spatial coupling mirror 7 '
After the reflection of 45 ° of row, in the same direction and it is overlapped mutually with the 3rd directional light by periodic spatial coupling mirror 7 ', superposition light beam is through slow axis
Beam-expanding system 8 ' adjusts slow axis and expands multiple；Then it is parallel as Group II to enter quarter-wave plate 12 ' after polariscope 11 '
Light, the parallel parallel light of Group I, Group II export after merging after last integrated mirror 9 focuses on.
The effect of each part of the system of the present invention is as follows：
First semiconductor laser folds battle array 1, the second semiconductor laser folds battle array 2, the 3rd semiconductor laser folds battle array 1 ' and the 4th half
Conductor Laser folds battle array 2 ' and is used as light source spatially parallel superposition, ensures to obtain the high-output power for meeting industrial processes needs.
First fast axis collimation lens group 3, the second fast axis collimation lens group 4, the 3rd fast axis collimation lens group 3 ' and the 4th fast axis collimation are saturating
Microscope group 4 ' folds battle array 1 to the first semiconductor laser respectively, the second semiconductor laser folds battle array 2, the 3rd semiconductor laser folds battle array 1 ' and the
The fast axle light beam that four semiconductor lasers fold battle array 2 ' is collimated；First slow axis collimation lens array group 5, the second slow axis collimation lens
Array group 6, the 3rd slow axis collimation lens array group 5 ' and the 4th slow axis collimation lens array group 6 ' swash to the first semiconductor respectively
Light folds battle array 1, the second semiconductor laser folds battle array 2, the 3rd semiconductor laser folds battle array 1 ' and the 4th semiconductor laser folds the slow axis of battle array 2 '
Light beam is collimated, and is exported with obtaining fast, slow axis homogenization laser beam.Periodic spatial coupling mirror 7 and 7 ' respectively constitutes
Semiconductor laser stacking array 1 folds battle array 2 with the second semiconductor laser, the 3rd semiconductor laser is folded battle array 1 ' and folded with the 4th semiconductor laser
The spatially superposition coupling of battle array 2 ' improves power output, and keeps the characteristic of high brightness and linear polarization.Slow axis beam-expanding system 8 and 8 '
Focal length selection can be carried out as needed, and adjustment slow axis expands multiple to meet the regulation to strip light spots length.Integral mirror 9 can root
Selected according to progress focal length is needed to meet requirement of the workpieces processing 10 to laser power density and sharp keen length.Polariscope 11 and
11 ', quarter-wave plate 12 and 12 ', light stopper 13 and 13 ' form two feedback light insulation blocking systems (as shown in Figure 5), use
System is damaged in avoiding feedback light return system.Its principle is：Polariscope 11 and 11 ' be it is high to horizontal polarization light thoroughly,
The high anti-polarization coupled mirror of orthogonal polarized light.Pass through quarter-wave respectively through the light of the horizontal polarization of polariscope 11 and 11 '
The rear polarizer direction of piece 12 and 12 ' rotates 45 degree, passes through a quarter respectively again after workpieces processing surface reflects
The polarization direction of wave plate 12 and 12 ' rotates 45 degree again, passes twice through the polarization direction work of quarter-wave plate 12 and is rotated by 90 °, by original
Carry out horizontal polarization and become vertical polarization, arrive again at after polariscope 11 and 11 ' by height instead to frequency modulated light device 13 and 13 ', light stopper 13
And 13 ' export above-mentioned feedback beam, permanent damage is caused to laser to avoid light beam from being reflected back original optical path.
The operation principle of the system of the present invention：
As shown in Figure 1, shown in Figure 5, the first fast and slow axis collimation lens set 3 and the 5, second fast and slow axis collimation lens set 4 and the 6, the 3rd
Fast and slow axis collimation lens set 3 ' and 5 ', the 4th fast and slow axis collimation lens set 4 ' and 6 ' fold battle array 1, the to the first semiconductor laser respectively
Two semiconductor lasers fold battle array 2, the 3rd semiconductor laser folds battle array 1 ', the 4th semiconductor laser folds battle array 2 ' and carries out fast axle and slow-axis direction
Collimation, obtain the fast, laser beam of slow axis beam uniform quality.The semiconductor laser bar bar that each semiconductor laser is folded in battle array exists
Beam sizes control the half in bar stripe pitch after quick shaft direction collimation, and the first semiconductor laser folds battle array 1, the second semiconductor laser
Folded battle array 2, the 3rd semiconductor laser fold battle array 1 ', the 4th semiconductor laser folds the upper corresponding semiconductor laser bar article of battle array 2 ' in fast axle
Space length after the collimation of direction is half bar bar, and the first semiconductor laser folds all semiconductor laser bar bar outputs of battle array 1
Collimated light beam all passed through through periodic spatial coupling mirror 7, and the second semiconductor laser folds collimated light beam that battle array 2 exports through week
The all 45 ° of reflections of phase property Space Coupling mirror 7, transmitted light (the first directional light) and reflected light (the second directional light) are through periodic spatial
Space overlapping is into Group I directional light after coupling mirror 7；3rd semiconductor laser folds the flat of all semiconductor laser bar article outputs of battle array 1 '
Row light beam all passes through through periodic spatial coupling mirror 7 ', and the 4th semiconductor laser folds the collimated light beam of the output of battle array 2 ' through the cycle
Property all 45 ° of reflections of Space Coupling mirror 7 ', transmitted light (the 3rd directional light) and reflected light (the 4th directional light) are through periodic spatial
The rear space overlapping Group II directional light of coupling mirror 7 ', high-power output is realized in two groups of parallel parallel light superpositions, and ensure that output
Polarization of light characteristic, whole system is set easily to add feedback light insulation blocking system.From the I of periodic spatial coupling mirror 7 and 7
The light beam of the parallel light output of group passes through four points twice by the Group I directional light of slow axis beam-expanding system 8 and 8, backward feedback light respectively
One of the rear polarizer direction of wave plate 12 change and 900 incide polariscope 11 and 11 ', reflex to and be in the light respectively through polariscope 11 and 11 '
Device 13 and 13 ', the taper concave surface blacking on light stopper 13 and 13 ', system is damaged with avoiding feedback light from returning；Last light
The surface of workpiece 10 is focused on after the integrated mirror 9 of beam to its working process, back focal plane and the surface of workpieces processing 10 weight of integral mirror 9
Close.
It is one embodiment that inventor provides below.
Embodiment：
Technical scheme is followed, the space overlapping coupling high power myriawatt semiconductor laser of the present embodiment folds battle array system
System, include the first semiconductor laser and fold the folded battle array group (2) of battle array group (1), the second semiconductor laser；First semiconductor laser folds battle array group (1)
The semiconductor of battle array 1 and second, which is folded, including the first semiconductor folds battle array 2；Second semiconductor, which folds battle array group (2), includes the folded battle array 1 ' of the 3rd semiconductor
Battle array 2 ' is folded with the 3rd semiconductor；First fast axis collimation lens group (3), the second fast axis collimation lens group (4), the 3rd fast axis collimation are saturating
Microscope group (3 '), the 4th fast axis collimation lens group (4 ')；First slow axis collimation lens array group (5), the second slow axis collimation lens row
Battle array group (6), the 3rd slow axis collimation lens array group (5 '), the 4th slow axis collimation lens array group (6 ')；Period 1 property space
Coupling mirror (7), Secondary periodicity Space Coupling mirror (7 ')；First slow axis beam-expanding system (8), the second slow axis beam-expanding system (8 '),
Integral mirror (9)；Polariscope 11 and 11 ', quarter-wave plate 12 and 12 ' and light stopper 13 and 13 '.
Wherein：
First semiconductor laser folds battle array 1, the second conductor Laser folds battle array 2, the 3rd semiconductor laser folds battle array 1 ', the 4th semiconductor
Laser stacking array 2 ' is identical, and they are used is superimposed by 976nm, power for 120W 25 semiconductor laser bar bars along quick shaft direction
3000 watts of the folded battle array formed.First semiconductor laser folds battle array 1, the second conductor Laser folds battle array 2, the 3rd semiconductor laser folds battle array
The general power that 1 ', the 4th semiconductor laser folds battle array 2 ' is 12000 watts.As shown in figure 3, periodic spatial coupling mirror 7 and 7 ' uses
45 ° of speculums of 25 wide half bar stripe pitch are spatially arranged by half bar stripe pitch to be formed by stacking.It is in the light
Device 13 and 13 ' scribbles black using 45 degree of taper concave metallic blocks are provided with its concave surface.
Folded in the first semiconductor laser and the first fast axis collimation lens 3, the first slow axis collimation are set gradually in the light path of battle array 1 thoroughly
Lens array 5, periodic spatial coupling mirror 7, slow axis beam-expanding system 8, polariscope 11, quarter-wave plate 12 and integral mirror 9；Its
In, the first fast axis collimation lens 3, the first slow axis collimation lens array 5, slow axis beam-expanding system 8, focus lamp 9 and quarter-wave
Piece 12 is parallel with the place face of the first semiconductor bar bar laser array 1 and is arranged concentrically；The light of battle array 2 is folded in the second semiconductor laser
The second fast axis collimation lens 4, the second slow axis collimation lens array 6 and periodic spatial coupling mirror 7 are set gradually on road.The 3rd
Semiconductor laser, which is folded, sets gradually the first fast axis collimation lens 3 ', the 3rd slow axis collimation lens array 5 ', week in the light path of battle array 1 '
Phase property Space Coupling mirror 7 ', slow axis beam-expanding system 8 ', polariscope 11 ', quarter-wave plate 12 ' and integral mirror 9；Wherein, the 3rd
Fast axis collimation lens 3 ', the 3rd slow axis collimation lens array 5 ', slow axis beam-expanding system 8 ', integral mirror 9 and quarter-wave plate 12 '
It is parallel with the place face of the 3rd semiconductor bar article laser array 3 and be arranged concentrically；The light path of battle array 2 ' is folded in the 4th semiconductor laser
On set gradually the second fast axis collimation lens 4 ', the second slow axis collimation lens array 6 ' and periodic spatial coupling mirror 7 '.
First semiconductor laser folds the light beam that battle array 1 exports turns into the first directional light after fast axle and slow-axis direction collimation, the
Two semiconductor lasers fold the light beam that battle array 2 exports turns into the second directional light after fast axle and slow-axis direction collimation, the second directional light and
First directional light is perpendicular.The place face of periodic spatial coupling mirror 7 and the first directional light, the angle of the second directional light are 45 °.
First directional light is from periodic spatial coupling mirror 7 all by the way that the second directional light reaches the reflection of periodic spatial coupling mirror 7
Face；3rd semiconductor laser folds the light beam that battle array 1 ' exports turns into the 3rd directional light after fast axle and slow-axis direction collimation, and the 4th half
Conductor Laser folds the light beam that battle array 2 ' exports turns into the 4th directional light, the 4th directional light and the 3rd after fast axle and slow-axis direction collimation
Directional light is perpendicular.The place face of periodic spatial coupling mirror 7 ' is 45 ° with the 3rd directional light, the angle of the 4th directional light, the
Three directional lights are from periodic spatial coupling mirror 7 ' all by the way that the 4th directional light reaches the reflecting surface of periodic spatial coupling mirror 7.
As shown in figure 4, the first semiconductor laser, which folds the semiconductor laser of battle array 1 and second, folds each semiconductor laser bar in battle array 2
Beam sizes of the bar after quick shaft direction collimation are half bar stripe pitch, and the second semiconductor laser folds battle array 2 in quick shaft direction
Upper battle array 1 more folded than the first semiconductor laser is higher by half bar stripe pitch；The semiconductor laser of periodic spatial coupling mirror 7 to the second
Folded battle array 2 is higher by a quarter bar stripe pitch in quick shaft direction, and fold battle array 1 than the first semiconductor laser is higher by four points on quick shaft direction
Three bars of stripe pitch.The purpose so designed：First semiconductor laser folds the light after each semiconductor laser bar bar collimation in battle array 1
Beam can pass through periodic spatial coupling mirror 7, and the light beam after 2 each bars of bars collimations of the folded battle array of the second semiconductor laser is just incident
Corresponding on to periodic spatial coupling mirror 7 on 45 ° of speculums, so as to fold the first directional light of battle array 1 with the first semiconductor laser
Spatially superposition output.As shown in figure 4, the 3rd semiconductor laser folds battle array 1 ' and the 4th semiconductor laser is folded each half in battle array 2 '
Beam sizes of the conductor Laser bar bar after quick shaft direction collimation are half bar stripe pitch, and the 4th semiconductor laser folds battle array 2 '
Battle array 1 ' is folded than the 3rd semiconductor laser be higher by half bar stripe pitch on quick shaft direction；Periodic spatial coupling mirror 7 ' is than the
Four semiconductor lasers fold battle array 2 ' and are higher by a quarter bar stripe pitch in quick shaft direction, and battle array ' 1 is folded in fast axle than the 3rd semiconductor laser
3/4ths bars of stripe pitch are higher by direction.The purpose so designed：3rd semiconductor laser is folded each semiconductor in battle array 1 ' and swashed
Light beam after light bar bar collimation can pass through periodic spatial coupling mirror 7 ', and the 4th semiconductor laser folds each bar of article standard of battle array 2
Light beam after straight is just incided on the upper corresponding 45 ° of speculums of periodic spatial coupling mirror 7 ', so as to swash with the 3rd semiconductor
The 3rd directional light that light folds battle array is spatially superimposed output.
Embodiments of the present invention are explained in detail above in association with accompanying drawing, but the invention is not restricted to described implementation
Mode.For a person skilled in the art, in the case where not departing from the principle of the invention and spirit, to these embodiments
A variety of change, modification, replacement and modification are carried out, are still fallen within protection scope of the present invention.
Claims (7)
1. a kind of space overlapping high-power semiconductor laser for laser melting coating folds array 1 system, including the first semiconductor laser is folded
Battle array group (1), the second semiconductor laser fold battle array group (2)；First semiconductor laser, which folds battle array group (1), includes the folded He of battle array 1 of the first semiconductor
Second semiconductor folds battle array 2；Second semiconductor, which folds battle array group (2), includes the folded battle array 1 ' of the 3rd semiconductor and the folded battle array 2 ' of the 3rd semiconductor.Institute
State the first semiconductor laser and fold the folded battle array 2 of battle array 1, the second semiconductor laser, the folded battle array 1 ' of the 3rd semiconductor and the folded battle array 2 ' of the 4th semiconductor
It is formed by stacking by multiple semiconductor laser bar bars along quick shaft direction, and the semiconductor laser bar bar quantity that four folded battle arrays include
It is identical；Characterized in that, it is accurate also to include the first fast axis collimation lens group (3), the second fast axis collimation lens group (4), the 3rd fast axle
Straight lens group (3 '), the 4th fast axis collimation lens group (4 ')；First slow axis collimation lens array group (5), the second slow axis collimation are saturating
Lens array group (6), the 3rd slow axis collimation lens array group (5 '), the 4th slow axis collimation lens array group (6 ')；Period 1 property
Space Coupling mirror (7), Secondary periodicity Space Coupling mirror (7 ')；First slow axis beam-expanding system (8), the second slow axis beam-expanding system
(8 '), integral mirror (9)；Wherein：
The first fast axis collimation lens group (3), the second fast axis collimation lens group (4), the 3rd fast axis collimation lens group (3 ') and
4th fast axis collimation lens group (4 ') forms by multiple collimation lenses；The quantity and first of first fast axis collimation lens group (3)
The quantity that semiconductor laser folds semiconductor laser bar bar in battle array (1) is identical；Collimation lens in second fast axis collimation lens group (4)
The quantity that quantity folds semiconductor laser bar bar in battle array (2) with the second semiconductor laser is identical；3rd fast axis collimation lens group (3 ')
Quantity and three semiconductor lasers fold semiconductor laser bar bar in battle array (1 ') quantity it is identical；4th fast axis collimation lens group (4 ')
The quantity that the quantity of middle collimation lens folds semiconductor laser bar article in battle array (2 ') with the 4th semiconductor laser is identical；First slow axis is accurate
Straight lens array group (5), the second slow axis collimation lens array group (6), the 3rd slow axis collimation lens array group (5 ') and the 4th are slow
Axle collimation lens array group (6 ') forms by multiple collimation lens arrays；Collimated in first slow axis collimation lens array group (5)
The quantity that the quantity of lens array folds semiconductor laser bar bar in battle array (1) with the first semiconductor laser is identical；Second slow axis collimates
The quantity of collimation lens array folds the number of semiconductor laser bar bar in battle array (2) with the second semiconductor laser in lens array group (6)
Measure identical；The quantity of collimation lens array folds battle array (1 ') with the first semiconductor laser in 3rd slow axis collimation lens array group (5 ')
The quantity of middle semiconductor laser bar bar is identical；The quantity of collimation lens array and the in 4th slow axis collimation lens array group (6 ')
The quantity that four semiconductor lasers fold semiconductor laser bar bar in battle array (2 ') is identical.
It is right in battle array (1) that each collimation lens in the first fast axis collimation lens group (3) is folded relative to the first semiconductor laser
The semiconductor laser bar bar answered is parallel and concentric placement, and distance between the two is the focal length of the collimation lens；Second fast axle
Each collimation lens in collimation lens set (4) is folded corresponding semiconductor laser bar bar in battle array (2) with the second semiconductor laser and put down
Row and with one heart placement, and distance between the two is the focal length of fast axis collimation lens；In 3rd fast axis collimation lens group (3 ')
Each collimation lens folds that corresponding semiconductor laser bar bar in battle array (1 ') is parallel and concentric placement relative to the first semiconductor laser,
And distance between the two is the focal length of the collimation lens；Each collimation lens in 4th fast axis collimation lens group (4 ') and
Two semiconductor lasers fold that corresponding semiconductor laser bar bar in battle array (2 ') is parallel and concentric placement, and distance between the two is fast
The focal length of axle collimation lens.Each collimation lens array of first slow axis collimation lens array group (5) is relative to the first semiconductor
Bar bar corresponding in laser stacking array is parallel and concentric placement, and distance between the two is Jiao of the slow axis collimation lens array
Away from；Each collimation lens array of second slow axis collimation lens array group (6) folds phase in battle array relative to the second semiconductor laser
Corresponding bar of bar be parallel and concentric placement, and distance between the two is the focal length of the slow axis collimation lens array；3rd slow axis
Each collimation lens array of collimation lens array group (5 ') is parallel relative to corresponding bar bar in the folded battle array of the first semiconductor laser
And place with one heart, and distance between the two is the focal length of the slow axis collimation lens array；4th slow axis collimation lens array group
Each collimation lens array of (6 ') folds that corresponding bar bar in battle array is parallel and concentric placement relative to the second semiconductor laser,
And distance between the two is the focal length of the slow axis collimation lens array；
It is accurate through the first fast axis collimation lens group (3), the first slow axis successively that first semiconductor laser folds the light beam that battle array (1) is sent
Straight lens array group (5) turns into the first directional light after being collimated on fast, slow-axis direction, is partly led by each in the first directional light
The size for the light beam that volumetric laser bar bar is sent is half bar stripe pitch；Second semiconductor laser folds the light beam that battle array (2) is sent
Successively through the second fast axis collimation lens group (4), the second slow axis collimation lens array group (6) after fast, slow-axis direction is collimated
As the second directional light, the size of the light beam sent in the second directional light by each semiconductor laser bar bar is half bar bar
Spacing；Face and the first directional light, the angle of the second directional light are 45 ° where periodic spatial coupling mirror (7), the first directional light
All passed through through periodic spatial coupling mirror (7), the second directional light is periodically empty to be reached perpendicular to the direction of the first directional light
Between coupling mirror, through periodic spatial coupling mirror (7) carry out 450After reflection, with passing through the first flat of periodic spatial coupling mirror (7)
Row light in the same direction and be overlapped mutually, superposition light beam through slow axis beam-expanding system (8) adjustment slow axis expand multiple as I combined beam it is parallel
Light beam；3rd semiconductor laser folds the light beam that sends of battle array (1 ') successively through the 3rd fast axis collimation lens group (3 '), the 3rd slow
Axle collimation lens array group (5 ') turns into the 3rd directional light after being collimated on fast, slow-axis direction, by every in the 3rd directional light
The size for the light beam that individual semiconductor laser bar bar is sent is half bar stripe pitch；4th semiconductor laser is folded battle array (2 ') and sent
Light beam enter successively through the 4th fast axis collimation lens group (4 '), the 4th slow axis collimation lens array group (6 ') in fast, slow-axis direction
Turn into the 4th directional light after row collimation, the size of the light beam sent in the 4th directional light by each semiconductor laser bar article is two points
One of bar stripe pitch；Face where periodic spatial coupling mirror (7 ') and the 3rd directional light, the angle of the 4th directional light are 45 °,
3rd directional light all passes through through periodic spatial coupling mirror (7 '), and the 4th directional light perpendicular to the direction of the 3rd directional light to arrive
Up to periodic spatial coupling mirror, 45 are carried out through periodic spatial coupling mirror (7 ')0After reflection, with passing through periodic spatial coupling mirror
3rd directional light of (7 ') is in the same direction and is overlapped mutually, and superposition light beam expands multiple through slow axis beam-expanding system (8 ') adjustment slow axis to be turned into
II combined beam collimated light beam.Finally integrated mirror (9) synthesis is poly- for I combined beam collimated light beam and II combined beam collimated light beam
Jiao is in strip hot spot output.
2. space overlapping high-power semiconductor laser as claimed in claim 1 folds array 1 system, it is characterised in that the periodicity
Space Coupling mirror (7) and (7 ') are periodicity device, in one cycle above 1/2 cycle be 45 ° of full impregnateds, below 1/2 week
Phase, 45 ° of height were anti-, and one periodic width is equal with the spacing of semiconductor laser bar bar.
3. space overlapping high-power semiconductor laser as claimed in claim 2 folds array 1 system, it is characterised in that the periodicity
Space Coupling mirror (7) and (7 ') are arranged by multiple 45 ° of speculums of half bar stripe pitch width by half bar stripe pitch
Arrange and be fixed as one and form, or etched and formed in the horizontal direction with laser using 45 ° of speculums of a monoblock.
4. space overlapping high-power semiconductor laser as claimed in claim 1 folds array 1 system, it is characterised in that also includes by inclined
Galvanometer (11), quarter-wave plate (12) and light stopper (13) composition feedback light insulation blocking system I and by polariscope
The feedback light insulation blocking system II of (11 '), quarter-wave plate (12 ') and light stopper (13 ') composition, the polariscope (11)
And quarter-wave plate (12) is arranged between slow axis beam-expanding system (8) and integral mirror (9), polariscope (11) and periodic spatial
Coupling mirror (7) be arranged in parallel, and light stopper (13) is arranged on the side of polariscope (11)；Light beam after slow axis beam-expanding system (8)
Polariscope (11) is first reached, the light of the horizontal polarization of polariscope (11) is by quarter-wave plate (12) polarization direction rotation 45
Degree, rotate 45 degree again again by quarter-wave plate (12) polarization direction after workpieces processing surface reflects, two
It is secondary to be rotated by 90 ° by quarter-wave plate (12) polarization direction work, i.e., vertical polarization is become by horizontal polarization, arrived again at
Anti- above-mentioned light beam is exported to frequency modulated light device (13), light stopper (13) by height after polariscope (11).The polariscope (11 ') and four points
One of wave plate (12 ') be arranged between slow axis beam-expanding system (8 ') and integral mirror (9), polariscope (11 ') and periodic spatial coupling
Close mirror (7 ') to be arranged in parallel, light stopper (13 ') is arranged on the side of polariscope (11 ')；Light after slow axis beam-expanding system (8 ')
Beam first reaches polariscope (11 '), and the light of the horizontal polarization of polariscope (11 ') revolves by quarter-wave plate (12 ') polarization direction
Turn 45 degree, rotate 45 again again by quarter-wave plate (12 ') polarization direction after workpieces processing surface reflects
Degree, passes twice through quarter-wave plate (12 ') polarization direction work and is rotated by 90 °, i.e., become vertical polarization by horizontal polarization, then
Anti- above-mentioned light beam is exported to frequency modulated light device (13 '), light stopper (13 ') by height after secondary arrival polariscope (11 ').
5. space overlapping high-power semiconductor laser as claimed in claim 1 folds array 1 system, it is characterised in that described the first half
Conductor Laser folds battle array (1) and the second semiconductor laser and folds in battle array (2) each semiconductor laser bar bar after quick shaft direction collimation
Beam sizes are half bar stripe pitch, and the second semiconductor laser folds battle array (2) first semiconductor laser of ratio on quick shaft direction
Folded battle array (1) is higher by half bar stripe pitch；Periodic spatial coupling mirror (7) folds battle array (2) in fast axle than the second semiconductor laser
Direction is higher by a quarter bar stripe pitch, and fold battle array (1) than the first semiconductor laser is higher by 3/4ths bars of bars on quick shaft direction
Spacing.3rd semiconductor laser folds battle array (1 ') and the 4th semiconductor laser is folded each semiconductor laser bar article in battle array (2 ') and existed
Beam sizes after quick shaft direction collimation are half bar stripe pitch, and the 4th semiconductor laser folds battle array (2 ') on quick shaft direction
Battle array (1 '), which is folded, than the 3rd semiconductor laser is higher by half bar stripe pitch；Periodic spatial coupling mirror (7 ') the 4th semiconductor of ratio
Laser stacking array (2) is higher by a quarter bar stripe pitch in quick shaft direction, and battle array (1) is folded on quick shaft direction than the 3rd semiconductor laser
It is higher by 3/4ths bars of stripe pitch.
6. space overlapping high-power semiconductor laser as claimed in claim 1 folds array 1 system, it is characterised in that the light stopper
(13) and (13 ') are using 45 degree of taper concave metallic blocks are provided with, and black is scribbled on its concave surface.
7. space overlapping high-power semiconductor laser as claimed in claim 1 folds array 1 system, it is characterised in that described the first half
Conductor Laser folds battle array (1), the second conductor Laser folds battle array (2), the 3rd semiconductor laser folds battle array (1 ') and the 4th conductor Laser folds battle array
(2 ') use be formed by stacking by 976nm, power along quick shaft direction for 120W 25 semiconductor laser bar bars 3000 watts
Folded battle array.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110042386A (en) * | 2019-03-29 | 2019-07-23 | 西北大学 | Semiconductor laser array strip light spots laser cladding apparatus |
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| CN103579905A (en) * | 2013-11-11 | 2014-02-12 | 西北大学 | Space overlaid and coupled high-power semiconductor laser stack array system |
| CN105977771A (en) * | 2016-07-14 | 2016-09-28 | 北京凯普林光电科技股份有限公司 | Laser beam combining apparatus |
| CN207602982U (en) * | 2017-09-18 | 2018-07-10 | 张家港市顶峰激光科技有限公司 | Array 1 system is folded for the space overlapping high-power semiconductor laser of laser melting coating |
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| CN103579905A (en) * | 2013-11-11 | 2014-02-12 | 西北大学 | Space overlaid and coupled high-power semiconductor laser stack array system |
| CN105977771A (en) * | 2016-07-14 | 2016-09-28 | 北京凯普林光电科技股份有限公司 | Laser beam combining apparatus |
| CN207602982U (en) * | 2017-09-18 | 2018-07-10 | 张家港市顶峰激光科技有限公司 | Array 1 system is folded for the space overlapping high-power semiconductor laser of laser melting coating |
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