CN103779774A - Semiconductor laser stack end pump solid-state laser device - Google Patents
Semiconductor laser stack end pump solid-state laser device Download PDFInfo
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- CN103779774A CN103779774A CN201410042957.2A CN201410042957A CN103779774A CN 103779774 A CN103779774 A CN 103779774A CN 201410042957 A CN201410042957 A CN 201410042957A CN 103779774 A CN103779774 A CN 103779774A
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Abstract
The invention discloses a semiconductor laser stack end pump solid-state laser device which comprises a semiconductor laser stack, an aspheric surface cylindrical lens, a cylindrical lens array, a laser beam division device, a laser beam rearrangement device, a beam expander, a focus lens and a resonant cavity. Pumping lasers generated by the semiconductor laser stack sequentially enter the aspheric surface cylindrical lens and the cylindrical lens array to carry out collimation in the speed axis direction, the collimated pumping lasers enter the laser beam division device and the laser beam rearrangement device to carry out laser beam shaping, the shaped pumping lasers enter the beam expander to carry out slow axis divergence angle adjustment, and then the pumping lasers after the slow axis divergence angle adjustment are focused through the focus lens to a laser crystal in the resonant cavity to carry out pumping on the laser crystal. According to the semiconductor laser stack end pump solid-state laser device, laser spots focused to the laser crystal through the focus lens after collimation, division, rearranging and beam expanding are carried out are symmetrical, the semiconductor laser stack end pump solid-state laser device is well matched with a vibration laser mode, and output laser beams are circular and good in quality.
Description
Technical field
The present invention relates to laser technique field, particularly relate to the folded battle array of a kind of semiconductor laser end pump solid state laser.
Background technology
The semiconductor laser of diode pumped solid state laser utilization output fixed wave length has replaced traditional krypton lamp or xenon lamp to carry out pumping to laser crystal, have that Spectral matching is good, good beam quality, reliability are high, without advantages such as ultra-violet radiations, be therefore applied to more and more widely the fields such as laser processing, medical treatment and detection.
According to the difference of integrated level, semiconductor laser can be divided into semiconductor laser single tube and semiconductor laser array.Semiconductor laser array is to be integrated at slow-axis direction (being parallel to pn knot) by multiple semiconductor laser single tubes, is applied to large-power occasions more.Semiconductor laser array is at its quick shaft direction (perpendicular to pn knot), and clear aperature is only generally 1 μ m, but the angle of divergence can reach 50 °; Slow-axis direction is generally made up of 19 semiconductor laser single tubes, and each single tube slow-axis direction clear aperature is generally 100 μ m, and the angle of divergence is 10 °.
Diode-end-pumped solid state laser generally speaking has side pump and end pump two kinds of modes: side pump can be with multiple semiconductor laser array pumping laser crystal, thereby obtain high power output, but its transformation efficiency is low, causes energy dissipation, and beam quality is very poor; End pump mode is because pattern matching is good, and semiconductor laser is propagation path long enough in laser crystal, pump light is absorbed fully, so conversion ratio is very high.
In general, semiconductor laser end pump solid state laser has following method:
1, as shown in Figure 1, semiconductor laser end pump solid state laser is that semiconductor laser is coupled in optical fiber 11, then utilizes coupling optical system 12 laser to be converged to the hot spot that is less than 1mm for diameter, thereby laser crystal 13 is carried out to pumping.
The method can be by the heat radiation of semiconductor laser and laser crystal 13 separately, makes laser heat management simple, and optical fiber 11 has homogenization simultaneously, can make laser crystal 13 end pumping light be distributed as circle.
But the method also has drawback, increase first significantly the cost of laser, optical fiber 12 output semiconductor laser prices are far above semiconductor laser; Next has reduced the reliability of device, and optical fiber is easy to lose, and its end face is easy to burn; Then be exactly that optical fiber has fevering sodium effect, this is unfavorable for the absorption of anisotropic laser crystals to pump light; Last semiconductor laser has more Energy Damage while being coupled to optical fiber, finally can affect efficiency of laser.
2, as shown in Figure 2, semiconductor laser end pump solid state laser is to utilize optical fiber lens 22 to collimate fast axle semiconductor laser array 21, then utilize cylindrical lens array collimation slow axis, finally pump light is utilized focus lamp 23 to focus on laser crystal 24, laser crystal 24 is carried out to pumping.
The method is with low cost, but its drawback is optical fiber lens, 22 spherical aberrations are very large, the remaining angle of divergence of pump light after collimation is still very large, next is that slow axis beam quality will be greater than 400mm mrad, this hot spot that will make after focusing is elliptical shape, causing Solid State Laser end pumping light to distribute is also elliptical shape, makes far field light intensity be oval Gaussian Profile, and focusing difficulty is larger.
3, as shown in Figure 3, semiconductor laser end pump solid state laser is that semiconductor laminated array 31 emitting lasers of high brightness are coupled to duckbilled mirror 32(lens duct), the waveguide effect that utilizes duckbilled mirror 32 by laser coupled to laser crystal 33 end faces, thereby laser crystal 33 is carried out to pumping.
The method compact conformation and can obtain very high laser power.But to be the loss of duckbilled mirror 32 in this scheme very large and be difficult to pump light to be coupled to very little spot size for its drawback, makes the pattern matching variation between pump light and oscillation light.
Summary of the invention
Based on this, be necessary for the problems referred to above, provide that a kind of power output is high, with low cost, non-fiber loss, aplanasia, laser crystal end pumping light be distributed as the folded battle array of a circular semiconductor laser end pump solid state laser.
The folded battle array of an a kind of semiconductor laser end pump solid state laser, comprises that semiconductor laser folds battle array, aspheric surface post lens, cylindrical lens array, light beam dispenser, light beam rearrangement device, beam expander, focus lamp and resonant cavity;
The pump light that the folded battle array of described semiconductor laser produces incides described aspheric surface post lens successively, cylindrical lens array carries out the axial collimation of speed, pump light after collimation enters described light beam dispenser and described light beam rearrangement device carries out beam shaping, pump light after shaping enters described beam expander and carries out the adjustment of the slow axis angle of divergence, then described focus lamp focuses on the pump light after the adjustment of the slow axis angle of divergence on the laser crystal in described resonant cavity, and described laser crystal is carried out to pumping.
The folded battle array of above-mentioned semiconductor laser end pump solid state laser, while mutually comparing, has following advantage with prior art:
1, the present invention adopts the folded battle array of semiconductor laser to produce a pump light, and pump light power output is large, and owing to not adopting optical fiber, makes that laser is with low cost, non-fiber loss, has increased the reliability of device etc.;
2, the present invention adopts the pump light of aspheric surface post lens noise spectra of semiconductor lasers quick shaft direction to collimate, and because aspheric surface has aplanatic effect, so can reach the effect of diffraction limit, after collimation, the remaining angle of divergence of pump light is less;
3, the present invention adopts the pump light after light beam dispenser and light beam rearrangement device collimation to carry out beam shaping, then utilize beam expander to expand slow axis pump light, spot size and the far-field divergence angle of pump light in fast and slow axis direction all reached unanimity, so focus on the hot spot symmetry on laser crystal by focus lamp, and with oscillation light pattern matching is good, make the laser beam pattern of output for circular, good beam quality.
Accompanying drawing explanation
Fig. 1 is the structural representation of semiconductor laser end pump solid state laser embodiment mono-in prior art;
Fig. 2 is the structural representation of semiconductor laser end pump solid state laser embodiment bis-in prior art;
Fig. 3 is the structural representation of semiconductor laser end pump solid state laser embodiment tri-in prior art;
Fig. 4 is the front view of semiconductor laser end pump solid state laser embodiment mono-of the present invention;
Fig. 5 is the vertical view of semiconductor laser end pump solid state laser embodiment mono-of the present invention;
Fig. 6 is the front view of semiconductor laser end pump solid state laser embodiment bis-of the present invention;
Fig. 7 is the light spot shape schematic diagram after fast and slow axis collimation of the specific embodiment of the invention;
Fig. 8 is the light spot shape schematic diagram after light beam dispenser of the specific embodiment of the invention;
Fig. 9 is the light spot shape schematic diagram after light beam rearrangement device of the specific embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing, the embodiment of the folded battle array of semiconductor laser of the present invention end pump solid state laser is described in detail.
As shown in Fig. 4 or Fig. 5, the folded battle array of a kind of semiconductor laser end pump solid state laser, comprises the folded battle array 1 of semiconductor laser, aspheric surface post lens 2, cylindrical lens array 3, light beam dispenser 4, light beam rearrangement device 5, beam expander 6, focus lamp 7 and resonant cavity 8;
The pump light that the folded battle array 1 of described semiconductor laser produces incides described aspheric surface post lens 2 successively, cylindrical lens array 3 carries out the axial collimation of speed, pump light after collimation enters described light beam dispenser 4 and described light beam rearrangement device 5 carries out beam shaping, pump light after shaping enters described beam expander 6 and carries out the adjustment of the slow axis angle of divergence, spot size and the far-field divergence angle of pump light in fast and slow axis direction all reached unanimity, then described focus lamp 7 focuses on the pump light after the adjustment of the slow axis angle of divergence on the laser crystal 82 in described resonant cavity 8, described laser crystal 82 is carried out to pumping.
If anisotropic laser crystal, for the polarization state and the laser crystal that make pump light match, in one embodiment, as shown in Figure 6, the folded battle array of semiconductor laser end pump solid state laser can also comprise the half-wave plate 9 between described beam expander 6 and described focus lamp 7.Described half-wave plate 9, for rotating pumping polarisation of light direction, makes pump light be applicable to the polarization state of laser crystal 82, has kept the linear polarization characteristic of pump light in transmitting procedure, makes laser crystal 82 high to the absorptivity of pump light.
The distance of the folded battle array of semiconductor laser on quick shaft direction is generally 1.9mm, and the folded battle array of semiconductor laser of the present invention, in order to facilitate follow-up light beam to cut apart, will be cut apart umber according to light beam and determine its distance on quick shaft direction.In one embodiment, the folded battle array of described semiconductor laser in quick shaft direction distance be light beam fast axial extent and light beam to cut apart umber long-pending, wherein the fast axial extent of light beam is according to formula: the fast fast axle focal length of the axial extent=2* fast axle of the * tan(angle of divergence/2) definite; Cut apart mark according to formula: cut apart mark
In one embodiment, the folded battle array of described semiconductor laser comprises the semiconductor laser array that at least one microchannel is cooling, and semiconductor laser array number is more, and the pumping light power of generation is larger.
Described aspheric surface post lens are for collimating to the pump light on quick shaft direction, simultaneously because aspheric surface has aplanatic effect, so can reach the effect of diffraction limit, the angle of divergence after collimation is reduced, for the folded battle array of semiconductor laser, after collimation, the angle of divergence is generally 8mrad(1/e
2).Described cylindrical lens array is for collimating to the pump light on slow-axis direction, and in one embodiment, the lens cycle of described cylindrical lens array is identical with the cycle of semiconductor laser array luminescence unit.
Pump light after collimation is larger in the beam parameter product gap of fast and slow axis, in order to make the beam parameter product homogenizing of fast and slow axis, need to carry out shaping with the pump beam after light beam dispenser and light beam rearrangement device collimation.In one embodiment, described light beam dispenser and described light beam rearrangement device can be parallel flat.Described light beam dispenser has the function of light beam translation, it according to the folded battle array of semiconductor laser distance and the light beam on quick shaft direction cut apart umber, by the certain distance of pump light translation on quick shaft direction.Described light beam rearrangement device is cut apart umber according to length and light beam on the folded battle array of semiconductor laser slow-axis direction, and the pump light after cutting apart is moved along slow-axis direction, and the pump light of cutting apart is reconfigured.Cut apart and reset through light beam, the beam parameter product of fast and slow axis is tending towards evenly, and wherein the design of light beam dispenser and light beam rearrangement device can obtain by method well known in the prior art.
Pump light after light beam dispenser and the shaping of light beam rearrangement device, in the angle of divergence of fast and slow axis, still gap is larger, at this moment need with described beam expander, the pump light on slow-axis direction to be expanded, the angle of divergence of slow-axis direction is reduced to consistent with the angle of divergence on quick shaft direction, the pump light after simultaneously expanding also reaches unanimity in the spot size of fast and slow axis.In one embodiment, described beam expander can comprise Plano concave cylindr lens peace projection lens, and described Plano concave cylindr lens overlaps with the focus of described planoconvex lens.
Described focus lamp focuses on the pump light after beam shaping on laser crystal by high reflective mirror, laser crystal is carried out to pumping, because spot size and far-field divergence angle in the pump light fast and slow axis direction after shaping all reach unanimity, so the laser pattern that laser crystal is exported by outgoing mirror is circle, good beam quality.The resonant cavity of wherein said high reflective mirror, laser crystal and outgoing mirror formation of solid polycomplex laser.
In order to understand more clearly the present invention, below in conjunction with a specific embodiment, the embodiment of apparatus of the present invention is described in detail.
First simply introduce the parameter of the present embodiment equipment therefor:
The folded battle array of semiconductor laser is made up of single Bar semiconductor laser array of 5 microchannel water-cooleds, each single Bar semiconductor laser array is made up of 19 luminous points, each luminous point is 100 μ m in the bright dipping aperture of slow-axis direction, and the angle of divergence is 10 ° (FWHM); Be 1 μ m in quick shaft direction bright dipping aperture, the angle of divergence is 70 ° (1/e2).The aspheric surface post focal length of lens is 0.91mm, and after fast axis collimation, the angle of divergence is generally 8mrad(1/e2), spot size is 1mm.The cylindrical lens array cycle is 0.5mm, and after slow axis collimation, the angle of divergence is 46mrad.The length of semiconductor laser array on slow-axis direction is 10mm.The beam fast axis width of the folded battle array of semiconductor laser is 1mm.
If disregard death ray district, fast axial light parameter is amassed BPP
f=2.5mm × 4mrad=10mmmrad, wherein 2.5 is the half of the folded battle array of 5 semiconductor lasers beam fast axis width 5mm, 4mrad is the half of the pump light angle of divergence after fast axis collimation.
Slow axis beam parameter product BPP
s=5mm × 23mrad=115mmmrad, wherein 5mm is the half of the length of semiconductor laser array on slow-axis direction, 23mrad is the half of the angle of divergence after slow axis collimation.
Utilize formula light beam to cut apart umber
The light spot shape of the pump light that the folded battle array of semiconductor laser produces after fast and slow axis collimation as shown in Figure 7.Pump light after collimation is cut apart by light beam dispenser, because the distance of the folded battle array of semiconductor laser on quick shaft direction is 3mm, cutting apart mark is 3, pump beam invariant position in the middle of keeping when so light beam is cut apart, the pump beam on the left side 1mm that moves up, the pump beam on the right side moves down 1mm, and the hot spot after cutting apart by light beam dispenser as shown in Figure 8.Another because the length of semiconductor laser array on slow-axis direction is 10mm, use light beam rearrangement device is by the light beam of pump beam left and right along X-axis mobile 3.3mm respectively, and the spot size after rearrangement as shown in Figure 9.
After light beam rearrangement, quick shaft direction beam parameter product BPP
f=7.5mm × 4mrad=15mmmrad, slow-axis direction beam parameter product BPP
s=1.67mm × 23mrad=38mmmrad.Differ 11.5 times than the rear fast and slow axis beam parameter product of collimation, after resetting, fast and slow axis parameter is long-pending is only 2.5 times.
After light beam rearrangement, the fast and slow axis angle of divergence still differs 5.75 times, need to adopt beam expander to expand the pump light of slow-axis direction, the slow axis pump light angle of divergence after expanding is 4mrad, spot size on slow-axis direction also expands to 18.2mm simultaneously, and spot size on quick shaft direction is 15mm, can find out that pump light after expanding is in no matter spot size or far-field divergence angle all reaches unanimity of fast and slow axis direction.
Pump light after expanding, through half-wave plate, matches its polarization direction and laser crystal.Then focus lamp focuses on laser crystal by high reflective mirror adjusting the pump light of polarization direction, and laser crystal is carried out to pumping, and now the diameter with a tight waist of the pump light on laser crystal is less than 1mm, and the laser beam quality exported by outgoing mirror is good and focus on.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (8)
1. the folded battle array of a semiconductor laser end pump solid state laser, is characterized in that, comprises that semiconductor laser folds battle array, aspheric surface post lens, cylindrical lens array, light beam dispenser, light beam rearrangement device, beam expander, focus lamp and resonant cavity;
The pump light that the folded battle array of described semiconductor laser produces incides described aspheric surface post lens successively, cylindrical lens array carries out the axial collimation of speed, pump light after collimation enters described light beam dispenser and described light beam rearrangement device carries out beam shaping, pump light after shaping enters described beam expander and carries out the adjustment of the slow axis angle of divergence, then described focus lamp focuses on the pump light after the adjustment of the slow axis angle of divergence on the laser crystal in described resonant cavity, and described laser crystal is carried out to pumping.
2. the folded battle array of semiconductor laser according to claim 1 end pump solid state laser, is characterized in that, also comprises the half-wave plate between described beam expander and described focus lamp.
3. the folded battle array of a semiconductor laser according to claim 1 end pump solid state laser, is characterized in that, the folded battle array of described semiconductor laser in quick shaft direction distance be light beam fast axial extent and light beam cut apart that umber is to be amassed.
4. the folded battle array of semiconductor laser according to claim 1 end pump solid state laser, is characterized in that, the folded battle array of described semiconductor laser comprises the semiconductor laser array that at least one microchannel is cooling.
5. the folded battle array of semiconductor laser according to claim 4 end pump solid state laser, is characterized in that, the lens cycle of described cylindrical lens array is identical with the cycle of semiconductor laser array luminescence unit.
6. the folded battle array of semiconductor laser according to claim 1 end pump solid state laser, is characterized in that, described light beam dispenser and described light beam rearrangement device are parallel flat.
7. the folded battle array of semiconductor laser according to claim 1 end pump solid state laser, is characterized in that, described beam expander comprises Plano concave cylindr lens peace projection lens, and described Plano concave cylindr lens overlaps with the focus of described planoconvex lens.
8. according to the folded battle array of the semiconductor laser described in claim 1 to 7 any one end pump solid state laser, it is characterized in that, described resonant cavity comprises high reflective mirror, laser crystal, outgoing mirror.
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Cited By (7)
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| CN105983781A (en) * | 2015-07-08 | 2016-10-05 | 深圳市普达镭射科技有限公司 | Control system capable of increasing YAG laser welding quality |
| CN107121781A (en) * | 2017-06-19 | 2017-09-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Light-beam forming unit |
| CN109188729A (en) * | 2018-09-25 | 2019-01-11 | 湖南理工学院 | A kind of semiconductor Meta Materials wave plate and preparation method thereof |
| CN110161511A (en) * | 2019-04-30 | 2019-08-23 | 探维科技(北京)有限公司 | A kind of laser radar system |
| CN111007484A (en) * | 2019-12-27 | 2020-04-14 | 联合微电子中心有限责任公司 | Single line laser radar |
| CN111041474A (en) * | 2019-12-09 | 2020-04-21 | 中国科学院西安光学精密机械研究所 | High-power laser cladding head |
| CN112086848A (en) * | 2020-09-17 | 2020-12-15 | 河南顺博新能源科技有限公司 | High-power intracavity pumping terahertz wave parametric oscillator with uniform divergence angle and circular light spot output |
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| CN110161511A (en) * | 2019-04-30 | 2019-08-23 | 探维科技(北京)有限公司 | A kind of laser radar system |
| CN111041474A (en) * | 2019-12-09 | 2020-04-21 | 中国科学院西安光学精密机械研究所 | High-power laser cladding head |
| CN111007484A (en) * | 2019-12-27 | 2020-04-14 | 联合微电子中心有限责任公司 | Single line laser radar |
| CN111007484B (en) * | 2019-12-27 | 2023-08-25 | 联合微电子中心有限责任公司 | Single-line laser radar |
| CN112086848A (en) * | 2020-09-17 | 2020-12-15 | 河南顺博新能源科技有限公司 | High-power intracavity pumping terahertz wave parametric oscillator with uniform divergence angle and circular light spot output |
| CN112086848B (en) * | 2020-09-17 | 2023-08-11 | 河南顺博新能源科技有限公司 | High-power intracavity pump terahertz wave parametric oscillator for outputting uniform divergence angle round light spots |
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