CN204696448U - A kind of fast and slow axis beam quality homogenizer of semiconductor laser - Google Patents
A kind of fast and slow axis beam quality homogenizer of semiconductor laser Download PDFInfo
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- CN204696448U CN204696448U CN201520346203.6U CN201520346203U CN204696448U CN 204696448 U CN204696448 U CN 204696448U CN 201520346203 U CN201520346203 U CN 201520346203U CN 204696448 U CN204696448 U CN 204696448U
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Abstract
The utility model provides a kind of technical scheme of fast and slow axis beam quality homogenizer of semiconductor laser, the program is based on light beam total reflection principle, utilize right-angle prism Spatial Coupling as Beam rotation device, set of cylindrical lenses is adopted to collimate as Y-direction, two-piece type cylinder beam-shrinked mirror is as X-direction contracting bundle device, under the prerequisite not introducing each luminous point optical path difference, the fast and slow axis beam quality homogenize shaping of semiconductor laser can be realized.This utility model has Beam rotation aberrationless, and do not change light beam direction of advance, orthopedic systems debugs the features such as simple.The semiconductor laser high-brightness fiber-optic coupling output light source developed based on this utility model can be applicable to the various fields such as pumped optical fibre laser, medical treatment and industrial processes.
Description
Technical field
The utility model relates to field of laser device technology, especially a kind of fast and slow axis beam quality homogenizer of semiconductor laser.
Background technology
There is due to semiconductor laser the advantages such as electro-optical efficiency is high, good reliability, miniaturization, all developed rapidly and extensive use in laser pumping source and direct application etc., particularly as the pumping source of solid state laser and fiber laser, promote the fast development of all solid state laser.High brightness, high-power diode-end-pumped source are the important foundation conditions that fiber laser and solid state laser realize high efficiency, high-power output.
Semiconductor laser has asymmetrically distributed output light field.Semiconductor laser is perpendicular to the high angle of divergence direction (quick shaft direction) of PN junction presenting 30 ° ~ 70 °, but only 1 μm wide, luminous zone, beam quality reaches diffraction limit; Be parallel to the direction (slow-axis direction) of PN junction though the upper angle of divergence only having about 10 °, but luminous zone has the length of about 100 μm, and there is spacing between each luminous zone, be equivalent to many luminous zones intermittent arrangement and become line source, beam quality extreme difference, fast axle differs into hundred times with the beam quality of slow-axis direction.Light beam cannot be focused to the focal spot that size symmetrical has certain depth of focus by focusing system by the extremely asymmetric light beam of such fast and slow axis beam quality.
Therefore the beam quality difference of semiconductor laser fast and slow axis is improved, the axial beam quality of homogenize speed, the focal spot making semiconductor laser beam can be focused to size symmetrical is coupled into optical fiber and exports, and is the key technology that semiconductor laser optical fiber coupling module realizes the output of high brightness, high power and high reliability.
Utility model content
The purpose of this utility model, be exactly for the deficiency existing for prior art, and a kind of technical scheme of fast and slow axis beam quality homogenizer of semiconductor laser is provided, the program is based on light beam total reflection principle, utilize right-angle prism Spatial Coupling as Beam rotation device, set of cylindrical lenses is adopted to collimate as Y-direction, two-piece type cylinder beam-shrinked mirror is as X-direction contracting bundle device, under the prerequisite not introducing each luminous point optical path difference, the fast and slow axis beam quality homogenize shaping of semiconductor laser can be realized.This utility model has Beam rotation aberrationless, and do not change light beam direction of advance, orthopedic systems debugs the features such as simple.The semiconductor laser high-brightness fiber-optic coupling output light source developed based on this utility model can be applicable to the various fields such as pumped optical fibre laser, medical treatment and industrial processes.
This programme is achieved by the following technical measures: a kind of fast and slow axis beam quality homogenizer of semiconductor laser, is characterized in that: include semiconductor laser chip, fast axis collimation lens, right-angle prism group, set of cylindrical lenses and two-piece type cylinder beam-shrinked mirror; The laser beam that semiconductor laser chip is launched exports through after fast axis collimation lens, right-angle prism group, set of cylindrical lenses and two-piece type cylinder beam-shrinked mirror successively.
Preferred as this programme: right-angle prism group includes right-angle prism A, right-angle prism B and right-angle prism C, laser beam injects right-angle prism A through after fast axis collimation lens, then after the slant reflection of the inclined-plane of right-angle prism A, right-angle prism B inclined-plane and right-angle prism C, injects set of cylindrical lenses successively.
Preferred as this programme: the cross sectional shape of right-angle prism A, right-angle prism B and right-angle prism C is isosceles right triangle.
Preferred as this programme: each luminous point Y direction spot width after the right-angle side length of right-angle prism A equals fast axis collimation, its error is no more than ± and 2 μm; The height of right-angle prism A equals the distance on semiconductor laser chip between each luminous point, and its error is no more than ± and 5 μm.
Preferred as this programme: the right-angle side length of right-angle prism B and C equals the half of the spacing of each luminous point on semiconductor laser chip, its error is no more than ± and 10 μm; Each luminous point Y direction spot width after the height of 45 ° of right-angle prism B and C should equal fast axis collimation, its error is no more than ± and 2 μm.
Preferred as this programme: right-angle prism A, B and C are fixed by UV glue; The error in right-angle prism A and B coincidence face is less than 100 μm in X-direction, is less than 100 μm in Z-direction; The error in right-angle prism A and C coincidence face is less than 100 μm in X-direction, is less than 100 μm in Z-direction.
Preferred as this programme: the corresponding one group of right-angle prism group of each luminous point of semiconductor laser; The described right-angle prism group plane of incidence is parallel with the exiting surface of semiconductor laser, and parallelism error is less than ± 1mrad; The each luminous point of described semiconductor laser is equal in the distance of light direction to the plane of incidence of each self-corresponding right-angle prism group, should ensure the range error of each luminous point be less than ± 5 μm.
Preferred as this programme: the luminous zone of semiconductor laser is positioned at the back of the body focal length place of cylindrical lens, its error is less than ± and 50 μm.
Preferred as this programme: two-piece type cylinder beam-shrinked mirror includes plano-convex cylindrical lens and plano-concave cylindrical mirror, and the focal length ratio of plano-convex cylindrical lens and plano-concave cylindrical mirror equals the lenth ratio of hot spot X-direction and Y-direction.
Preferred as this programme: the object focus of plano-concave cylindrical mirror and the rear focus of plano-convex cylindrical lens overlap, its error is less than ± and 50 μm.
The beneficial effect of this programme can be learnt according to describing of such scheme, because the rotation of semiconductor laser beam is in this scenario based on total reflection principle, utilize right-angle prism group as Beam rotation device, can not introduce aberration causes hot spot to tilt, after orthopedic systems, light beam has become the angle of divergence and size respectively to the uniform light spots of symmetry, direction of beam propagation after shaping does not change, the optical path difference of each luminous point can not be introduced, and apparatus for shaping structure is simple, shaping element handling ease.
As can be seen here, the utility model compared with prior art, has substantive distinguishing features and progress, and its beneficial effect implemented also is apparent.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment.
Fig. 2 is the structural representation of right-angle prism group.
Fig. 3 is the light path contracting bundle schematic diagram of two-piece type cylinder beam-shrinked mirror.
Fig. 4 is the schematic shapes of shaping hot spot.
Fig. 5 is the structural representation of the array of multiple right-angle prism group composition.
In figure, 1 is semiconductor laser, and 2 is fast axis collimation lens, 3 is right-angle prism group, 4 is set of cylindrical lenses, and 5 is plano-convex cylindrical lens, and 6 is plano-concave cylindrical mirror, 7 is right-angle prism A, 8 is right-angle prism B, and 9 is right-angle prism C, and 11 is the hot spot after fast axis collimation lens, 12 is the hot spot through right-angle prism group, and 13 is the hot spot through X-direction contracting bundle.
Embodiment
All features disclosed in this specification, or the step in disclosed all methods or process, except mutually exclusive feature and/or step, all can combine by any way.
Arbitrary feature disclosed in this specification (comprising any accessory claim, summary and accompanying drawing), unless specifically stated otherwise, all can be replaced by other equivalences or the alternative features with similar object.That is, unless specifically stated otherwise, each feature is an example in a series of equivalence or similar characteristics.
Embodiment:
Choose semiconductor laser and comprise 5 luminous points, the fast axle luminous zone of each luminous point is of a size of 1 μm, slow axis luminous zone is of a size of 100 μm, spacing between each luminous point is 1000 μm, and fast axle angle of divergence < 45 ° (comprising 90% energy), slow axis divergence are less than 10 ° (comprising 90% energy).Adopt light beam reshaping structure as shown in Figure 1, use focal length is that the fast axis collimation lens noise spectra of semiconductor lasers of 360 μm carries out fast axis collimation, hot spot distribution after collimation is as shown in (mark 11) in Fig. 4, and after collimation, the fast axle residue angle of divergence is 3mrad, and quick shaft direction spot size is 0.5mm.Right-angle prism group is as shown in Figure 2 adopted to carry out luminous point rotation, the right-angle side of right-angle prism A is 0.5mm, is highly 1mm, the right-angle side of right-angle prism B and C is 0.5mm, is highly 0.5mm, adopt UV glue right-angle prism A, B and C to be carried out combination to fix, the error in right-angle prism A and B coincidence face: X-direction is less than 100 μm, Z-direction is less than 100 μm.The error in right-angle prism A and C coincidence face: X-direction is less than 100 μm, Z-direction is less than 100 μm.
Right-angle prism combination array (as shown in Figure 5) after 5 pairs of combinations are fixing is equal to the distance of semiconductor laser exiting surface.The hot spot distribution of semiconductor laser beam after right-angle prism combination array is as shown in Fig. 4 (mark 12), and because the light path rotating rear each luminous point is identical, the Y-direction size of each luminous point is consistent.
Adopt set of cylindrical lenses to carry out Y-direction collimation to light beam, cylindrical lens curvature distributes along Y-direction, and focal length is 11.0mm, and after cylindrical lens collimation, light beam is 9.0 mrad along the residue angle of divergence of Y-direction, and Y-direction spot size is 1.65mm.
Galilean telescope mirror system is adopted to carry out X-direction contracting bundle to light beam, as shown in Figure 3, plano-convex cylindrical lens and plano-concave cylindrical mirror curvature distribute all in X direction, the focal length ratio of plano-convex cylindrical lens and plano-concave cylindrical mirror is 3, hot spot distribution after X-direction contracting beam system is as shown in Fig. 4 (mark 13), hot spot is of a size of 1.67mm in X direction, the angle of divergence is 9mrad, and Y-direction is of a size of 1.65mm, the angle of divergence is 9mrad.
As can be seen from said process, semiconductor laser beam, after semiconductor laser fast and slow axis beam quality homogenizer of the present utility model, obtains the angle of divergence and size in the X-direction uniform light spots all equal with Y-direction.Achieve the homogenize of fast and slow axis beam quality, the direction of beam propagation after shaping does not simultaneously change, and can not introduce the optical path difference of each luminous point, improve the luminosity of semiconductor laser.
The utility model is not limited to aforesaid embodiment.The utility model expands to any new feature of disclosing in this manual or any combination newly, and the step of the arbitrary new method disclosed or process or any combination newly.
Claims (10)
1. a fast and slow axis beam quality homogenizer for semiconductor laser, is characterized in that: include semiconductor laser chip, fast axis collimation lens, right-angle prism group, set of cylindrical lenses and two-piece type cylinder beam-shrinked mirror; The laser beam that described semiconductor laser chip is launched exports through after fast axis collimation lens, right-angle prism group, set of cylindrical lenses and two-piece type cylinder beam-shrinked mirror successively.
2. the fast and slow axis beam quality homogenizer of a kind of semiconductor laser according to claim 1, it is characterized in that: described right-angle prism group includes right-angle prism A, right-angle prism B and right-angle prism C, laser beam injects right-angle prism A through after fast axis collimation lens, then after the slant reflection of the inclined-plane of right-angle prism A, right-angle prism B inclined-plane and right-angle prism C, injects set of cylindrical lenses successively.
3. the fast and slow axis beam quality homogenizer of a kind of semiconductor laser according to claim 2, is characterized in that: the cross sectional shape of described right-angle prism A, right-angle prism B and right-angle prism C is isosceles right triangle.
4. the fast and slow axis beam quality homogenizer of a kind of semiconductor laser according to claim 2, is characterized in that: each luminous point Y direction spot width after the right-angle side length of described right-angle prism A equals fast axis collimation, its error is no more than ± and 2 μm; The height of right-angle prism A equals the distance on semiconductor laser chip between each luminous point, and its error is no more than ± and 5 μm.
5. the fast and slow axis beam quality homogenizer of a kind of semiconductor laser according to claim 2, it is characterized in that: the right-angle side length of described right-angle prism B and C equals the half of the spacing of each luminous point on semiconductor laser chip, its error is no more than ± and 10 μm; Each luminous point Y direction spot width after the height of 45 ° of right-angle prism B and C should equal fast axis collimation, its error is no more than ± and 2 μm.
6. the fast and slow axis beam quality homogenizer of a kind of semiconductor laser according to claim 2, is characterized in that: described right-angle prism A, B and C are fixed by UV glue; The error in right-angle prism A and B coincidence face is less than 100 μm in X-direction, is less than 100 μm in Z-direction; The error in right-angle prism A and C coincidence face is less than 100 μm in X-direction, is less than 100 μm in Z-direction.
7. the fast and slow axis beam quality homogenizer of a kind of semiconductor laser according to claim 1, is characterized in that: the corresponding one group of right-angle prism group of each luminous point of described semiconductor laser; The described right-angle prism group plane of incidence is parallel with the exiting surface of semiconductor laser, and parallelism error is less than ± 1mrad; The each luminous point of described semiconductor laser is equal in the distance of light direction to the plane of incidence of each self-corresponding right-angle prism group, should ensure the range error of each luminous point be less than ± 5 μm.
8. the fast and slow axis beam quality homogenizer of a kind of semiconductor laser according to claim 1, is characterized in that: the luminous zone of described semiconductor laser is positioned at the back of the body focal length place of cylindrical lens, its error is less than ± and 50 μm.
9. the fast and slow axis beam quality homogenizer of a kind of semiconductor laser according to claim 1, it is characterized in that: described two-piece type cylinder beam-shrinked mirror includes plano-convex cylindrical lens and plano-concave cylindrical mirror, and the focal length ratio of plano-convex cylindrical lens and plano-concave cylindrical mirror equals the lenth ratio of hot spot X-direction and Y-direction.
10. the fast and slow axis beam quality homogenizer of a kind of semiconductor laser according to claim 1, is characterized in that: the rear focus of the object focus of plano-concave cylindrical mirror and plano-convex cylindrical lens overlaps, its error is less than ± and 50 μm.
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| CN201520346203.6U CN204696448U (en) | 2015-05-27 | 2015-05-27 | A kind of fast and slow axis beam quality homogenizer of semiconductor laser |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104836114A (en) * | 2015-05-27 | 2015-08-12 | 中国工程物理研究院应用电子学研究所 | Fast-slow axis beam quality homogenizing device of semiconductor laser |
| CN106785883A (en) * | 2016-12-20 | 2017-05-31 | 大族激光科技产业集团股份有限公司 | High-power semiconductor laser |
| CN106873168A (en) * | 2017-03-24 | 2017-06-20 | 北京工业大学 | A kind of lens for being applied to semiconductor laser device beam shaping |
| CN109193342A (en) * | 2018-10-15 | 2019-01-11 | 中国科学院理化技术研究所 | A kind of semiconductor laser |
| CN109899694A (en) * | 2017-12-11 | 2019-06-18 | 上海航空电器有限公司 | Using the laser lighting unit and optical system of optical lens and reflector |
| CN111061059A (en) * | 2019-12-25 | 2020-04-24 | 西安炬光科技股份有限公司 | Beam shaping component and laser module |
-
2015
- 2015-05-27 CN CN201520346203.6U patent/CN204696448U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104836114A (en) * | 2015-05-27 | 2015-08-12 | 中国工程物理研究院应用电子学研究所 | Fast-slow axis beam quality homogenizing device of semiconductor laser |
| CN104836114B (en) * | 2015-05-27 | 2018-04-06 | 中国工程物理研究院应用电子学研究所 | A kind of fast and slow axis beam quality homogenizer of semiconductor laser |
| CN106785883A (en) * | 2016-12-20 | 2017-05-31 | 大族激光科技产业集团股份有限公司 | High-power semiconductor laser |
| CN106873168A (en) * | 2017-03-24 | 2017-06-20 | 北京工业大学 | A kind of lens for being applied to semiconductor laser device beam shaping |
| CN106873168B (en) * | 2017-03-24 | 2019-06-14 | 北京工业大学 | A kind of lens applied to semiconductor laser device beam shaping |
| CN109899694A (en) * | 2017-12-11 | 2019-06-18 | 上海航空电器有限公司 | Using the laser lighting unit and optical system of optical lens and reflector |
| CN109193342A (en) * | 2018-10-15 | 2019-01-11 | 中国科学院理化技术研究所 | A kind of semiconductor laser |
| CN109193342B (en) * | 2018-10-15 | 2019-11-15 | 中国科学院理化技术研究所 | A kind of semiconductor laser |
| CN111061059A (en) * | 2019-12-25 | 2020-04-24 | 西安炬光科技股份有限公司 | Beam shaping component and laser module |
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