CN1713470A - Vertical laser with external cavity of transmitting semiconductor with telescopic resonant cavity - Google Patents

Abstract

The invention adopts reflection reducing coating, micro-channel heat sink and telescope. The distance between external cavity mirror and brag reflection mirror is 20-50mm. The telescope is added into the external cavity to form telescope resonant cavity.

Description

A kind of emission semiconductor laser of vertical external chamber surface with telescopic resonant cavity

Technical field:

The invention belongs to semiconductor laser field, relate to emission semiconductor laser of vertical external chamber surface.

Background technology:

Emission semiconductor laser of vertical external chamber surface belongs to a kind of in the surface-emitting laser, is that the new device in the semiconductor laser technique is with a wide range of applications in fields such as laser display, laser communication, materials processing, medical treatment and defence engineerings with its high power, quality light beam quality and the characteristics that are easy to two-dimensional array.Particularly it is easy to the characteristics of frequency multiplication and two dimensional surface array, can realize the high power laser light output of high light beam quality, and these advantages make it in industrial processes, Solid State Laser and fields such as optical-fiber laser pumping, crystal double frequency very large research and development prospect be arranged.The emission semiconductor laser of vertical external chamber surface structure mainly comprises: exocoel speculum, periodically Multiple Quantum Well active gain district, semiconductor-distribution Bragg reflector, diamond heat sink and heat sink etc., wherein exocoel speculum and semiconductor-distribution Bragg reflector have constituted the resonant cavity of laser.Device can inject under excitation and the optical pumping excitation dual mode at electric current works.Exocoel mirror structure in the existing emission semiconductor laser of vertical external chamber surface structure is a plano-concave lens, and its resonant cavity is the plano-concave resonant cavity, and operation wavelength is realized the deielectric-coating of high reflection at the concave side evaporation.Adopt this kind resonant cavity, the light of advancing in resonant cavity is had scattering process, so, certainly will increase the lasing threshold of device, reduce the efficient and the power output of device; And adopt the plano-concave resonant cavity can not make full use of the activation volume of gain media, thereby wasted a large amount of energy storage.Therefore need a kind of better resonant cavity of design, as high-power vertical external cavity face emitting semiconductor laser resonant cavity.Meanwhile, the heat radiation of high-power semiconductor laser is the key that influences device performance always, and the same problem of heat radiation that exists needs well to solve in emission semiconductor laser of vertical external chamber surface.

Summary of the invention:

When adopting the plano-concave resonant cavity, the laser of advancing there is scattering process in resonant cavity, so, certainly will increases the lasing threshold of device, reduce the efficient of device and the problem of power output for solving in the above-mentioned technology vertical external cavity emitting laser; Simultaneously, in order to solve the heat dissipation problem of high-power vertical external cavity emitting laser, the objective of the invention is to reduce the lasing threshold of device, improve Output optical power, meanwhile improve the heat radiation of device, further improve Output optical power and the stability of device work and the life-span of device of device.A key character of the present invention is to provide a kind of emission semiconductor laser of vertical external chamber surface with telescopic resonant cavity.

To achieve these goals, a kind of emission semiconductor laser of vertical external chamber surface with telescopic resonant cavity of the present invention it comprise: pump light source 1, external cavity mirror 2, high reflecting medium film 3, Window layer 5, light absorbing zone 6, periodically Multiple Quantum Well active gain district 7, semiconductor-distribution Bragg reflector 8, scolder 9, fin 10, heat sink 11, heat-conducting glue 12; Fixedly connected with the upper surface of light absorbing zone 6 in Window layer 5 lower surfaces, fixedly connected with the upper surface in periodicity Multiple Quantum Well active gain district 7 in light absorbing zone 6 lower surfaces, periodically fixedly connected with the upper surface of semiconductor-distribution Bragg reflector 8 in 7 lower surfaces, Multiple Quantum Well active gain district, fixedlying connected with the upper surface of fin 10 by scolder 9 in semiconductor-distribution Bragg reflector 8 lower surfaces, fixedlys connected with heat sink 11 upper surface by scolder 9 in fin 10 lower surfaces; It is characterized in that it also comprises: anti-reflection film 4, microchannel fin 13, telescope 14; Anti-reflection film 4 is fixedlyed connected with the upper surface of Window layer 5; Fixedly connected with the upper surface of microchannel fin 13 by heat-conducting glue 12 in heat sink 11 lower surfaces, external cavity mirror 2 and semiconductor-distribution Bragg reflector 8 20-50mm of being separated by, constitute the exocoel of laser, add telescope 14 and just constituted telescopic resonant cavity in exocoel, external cavity mirror is fixed on the optics micropositioning stage at two ends about in the of 2.So just realized a kind of emission semiconductor laser of vertical external chamber surface with telescopic resonant cavity.

Insert adjustable telescope 14 in the resonant cavity and constitute telescopic resonant cavity, just can obtain reliable large volume TEM ₀₀The die worker does, and telescope is suitably regulated, just can the interior thermal lensing effect of compensate for laser, and guarantee that simultaneously spot size is insensitive to the variation of thermal focal length.And adopted the plano-concave resonant cavity in the past, limited TEM ₀₀The volume of mould, in addition, the hot focus of laser has significantly changed pattern, and the focal length variations that pumping causes also can be disturbed laser output consumingly, makes laser can not have any reality or reliable the application.Adopt telescopic resonant cavity to play two different effects: one, the light beam of minimizing output, the loss that increases high-rder mode; They are two years old, telescope is a kind of focal length variable elements, therefore no matter resonant cavity is in any position among the resonance figure, can both regulate, because high-rder mode increases along with the minimizing of telescope output beam with the ratio of the diffraction loss of low-order mode, so can guarantee that the mould more than a certain exponent number can not reach threshold value by regulating telescope, therefore, can be that magnification ratio M and focal distance f are controlled the modeling process by telescopical two parameters.

Anti-reflection film 4 adopts HfO ₂Material is made, and the effective refractive index that anti-reflection film is selected is $n_{\mathrm{eff}}=\sqrt{n_0{\mathrm{<figure-callout\; id="1"\; label="n"\; filenames="A20051001697000081.png"\; state="\{\{state\}\}">n</figure-callout>}}_1},$ HfO wherein ₂The effective refractive index that material is selected is 1.85-1.90.HfO ₂Anti-reflection film stable performance and can be used for rigorous environment.Adhesiveness was good when anti-reflection film of the present invention was used for III-V family semi-conducting material, membrane structure is fine and close, even, free of pinholes, at effectively clear aperature theca interna flawless, scratch, idea, photographic fog and color spot, have advantages such as moisture-proof, good stability, good performances such as the scattering loss that the ability that has good resisting laser damage simultaneously, film microstructure cause is low.

When the present invention worked: device was worked in optical pumping mode (semiconductor laser or other LASER Light Source).Pump light is absorbed the generation photo-generated carrier through Window layer at absorbed layer and enters the active gain district, and electronics and hole are carried out compound, produce stimulated emission, and through the vibration of telescopic resonant cavity modeling, laser is from the external cavity mirror outgoing.

Advantage of the present invention: the present invention adopts the vertical external cavity emitting laser structure that has telescopic resonant cavity, at external cavity mirror concave side evaporation operation wavelength is realized the deielectric-coating of high reflection, meanwhile adopt accurate substrate removals technology and solder technology and microchannel heat dissipation technology solution device heat dissipation problem wait and improve power output efficiently; Aspect the beam quality that improves vertical external cavity face emitting semiconductor laser, by telescopical two parameters in the adjusting telescopic resonant cavity is that magnification ratio M and focal distance f are controlled modeling output, and can compensate the thermal lensing effect that takes place when pumping condition changes, output light is approximately directional light, the luminous zone of device is circular uniformly, thereby obtain the cylindrical symmetric beam quality, be beneficial to light beam coupling.The anti-reflection film that the present invention adopts can obtain the transmitance more than 99.99%, HfO ₂Anti-reflection film stable performance and can be used for rigorous environment.

Description of drawings

Fig. 1 is the vertical external cavity emitting laser structural representation of band telescopic resonant cavity of the present invention.

Embodiment:

The present invention is further described below in conjunction with drawings and Examples, but the invention is not restricted to these embodiment.Comprise among the embodiment: pump light source 1, external cavity mirror 2, high reflecting medium film 3, anti-reflection film 4, Window layer 5, light absorbing zone 6, periodically Multiple Quantum Well active gain district 7, semiconductor-distribution Bragg reflector 8, scolder 9, fin 10, heat sink 11, heat-conducting glue 12, microchannel fin 13, telescope 14.

Embodiment 1: be the output light of 980nm for excitation wavelength, pump light source 1 is a high power 800-810nm wavelength semiconductor laser array, external cavity mirror 2 is by k9 optical glass or quartzy making, diameter 5-15cm, radius of curvature 25-100mm, high reflecting medium film 3 is the Si/SiO2 deielectric-coating, and anti-reflection film 4 is HfO ₂Anti-reflection film, Window layer 5 is GaIn _0.49P, light absorbing zone 6 is Al _0.06GaAs, periodically Multiple Quantum Well active gain district 7 is GaIn _0.16As quantum well and GaAs _0.94P potential barrier, semiconductor-distribution Bragg reflector 8 are 30 couples of Al _0.12GaAs/Al _0.9GaAs, scolder 9 is indium or indium stannum alloy, and fin 10 is diamond or aluminium nitride or beryllium oxide material, and heat sink 11 is fine copper or oxygen-free copper or red copper, and heat-conducting glue 12 is siliceous for heat conduction, and microchannel fin 13 is a copper product.

Formed optical resonator between external cavity mirror 2 and the semiconductor-distribution Bragg reflector 8, in the chamber, put into telescope 14 and just constituted telescopic resonant cavity.External cavity mirror is fixed on the optics micropositioning stage at two ends about in the of 2, and can obtain wavelength is the vertical external cavity emitting laser that has telescopic resonant cavity of the laser output of 980nm.

Embodiment 2: change pump light source 1 among the embodiment 1 into high power 630-670nm semiconductor laser array, light absorbing zone 6 changes Al into _0.2GaAs, periodically Multiple Quantum Well active gain district 7 changes GaAs quantum well and Al into _0.2GaAs potential barrier, semiconductor-distribution Bragg reflector 8 change 30 couples of AlGa/Al into _0.2GaAs can obtain the vertical external cavity emitting laser that has telescopic resonant cavity that 850nm laser is exported.

Embodiment 3: change pump light source among the embodiment 1 into the 975-1250nm high-power semiconductor laser, Window layer 5 changes InP into, active area 7 changes the InGaAsP/InP material into, multilayer Bragg mirror 8 changes InP/InGaAsP into, can obtain the vertical external cavity emitting laser that has telescopic resonant cavity of 1550nm laser output.

Embodiment 4: anti-reflection film 4 of the present invention can be used for the laser that III-V family semi-conducting material is made.

Claims (2)

1, a kind of emission semiconductor laser of vertical external chamber surface with telescopic resonant cavity, comprise: pump light source (1), Window layer (5), light absorbing zone (6), periodicity Multiple Quantum Well active gain district (7), semiconductor-distribution Bragg reflector (8), scolder (9), fin (10), heat sink (11), heat-conducting glue (12), it is characterized in that also comprising: external cavity mirror (2), high reflecting medium film (3), anti-reflection film (4), microchannel fin (13), telescope (14); The concave surface of external cavity mirror (2) is fixedlyed connected with high reflecting medium film (3), fixedly connected with the upper surface of light absorbing zone (6) in Window layer (5) lower surface, fixedly connected with the upper surface in periodicity Multiple Quantum Well active gain district (7) in light absorbing zone (6) lower surface, periodically fixedly connected with the upper surface of semiconductor-distribution Bragg reflector (8) in lower surface, Multiple Quantum Well active gain district (7), fixedlying connected with the upper surface of fin (10) by scolder (9) in semiconductor-distribution Bragg reflector (8) lower surface, fixedlys connected with the upper surface of heat sink (11) by scolder (9) in fin (10) lower surface; It is characterized in that it also comprises: anti-reflection film (4), microchannel fin (13), telescope (14); Anti-reflection film (4) is fixedlyed connected with the upper surface of Window layer (5); Fixedly connected with the upper surface of microchannel fin (13) by heat-conducting glue 12 in heat sink (11) lower surface, external cavity mirror (2) and semiconductor-distribution Bragg reflector (8) 20-50mm of being separated by, constitute the exocoel of laser, add telescope (14) and just constituted telescopic resonant cavity in exocoel, external cavity mirror (2) two ends up and down is fixed on the optics micropositioning stage.So just realized a kind of emission semiconductor laser of vertical external chamber surface with telescopic resonant cavity.

2, a kind of emission semiconductor laser of vertical external chamber surface with telescopic resonant cavity according to claim 1 is characterized in that: anti-reflection film (4) adopts HfO ₂Material is made, and the effective refractive index of its selection is 1.85-1.90.

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