WO2016080252A1 - External resonator-type semiconductor laser - Google Patents

External resonator-type semiconductor laser

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Publication number
WO2016080252A1
WO2016080252A1 PCT/JP2015/081674 JP2015081674W WO2016080252A1 WO 2016080252 A1 WO2016080252 A1 WO 2016080252A1 JP 2015081674 W JP2015081674 W JP 2015081674W WO 2016080252 A1 WO2016080252 A1 WO 2016080252A1
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WO
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Prior art keywords
semiconductor laser
type semiconductor
external
external cavity
cavity type
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PCT/JP2015/081674
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French (fr)
Japanese (ja)
Inventor
太田 猛史
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カナレ電気株式会社
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers
    • H01S5/183Surface-emitting [SE] lasers having a vertical cavity [VCSE-lasers]

Abstract

[Problem] To make a transverse mode be unified or a low order mode, while making a laser oscillation output become larger. [Solution] The present invention provides an external resonator-type semiconductor laser provided with: a semiconductor laser chip; and an external optical system. The semiconductor laser chip is a broad area-type semiconductor laser which has an optical confinement function such that, in an optical waveguide, a transverse mode becomes multimode in the substrate in-plane direction of the broad area-type semiconductor laser and a transverse mode becomes a single mode in a direction perpendicular to the substrate. A high reflectivity coating is applied to a first end surface and an anti-reflection coating is applied to a second end surface, the second end surface is optically coupled to the external optical system, and a spatial filter for restricting an optical path in the substrate in-plane direction of the semiconductor laser chip is provided in the external optical system.

Description

External cavity type semiconductor laser

The present invention relates to a semiconductor laser, a semiconductor laser capable in particular generating a high-power laser beam. The present invention relates to a semiconductor laser of an external resonator type. The present invention relates to a solid state laser. The present invention relates to transverse mode control.

Patent Document 1, in a resonator of the solid-state laser using a rod-shaped YAG crystal, by performing restriction of the optical path provided lens and aperture, a method of performing a single transverse mode oscillation is disclosed.

Patent Document 2, a semiconductor laser array, a lens and, by using a fiber Bragg grating filter is formed an external cavity type semiconductor laser, a technique transverse mode generates multi-mode laser light is disclosed.

Patent Document 3, a wide stripe semiconductor laser (broad area semiconductor laser) a single-mode waveguide, an external cavity type semiconductor laser is disclosed in which is coupled via a mode converter using a prism. Also, the a fiber grating of the wide stripe semiconductor laser (broad area semiconductor laser), an external cavity type semiconductor laser is disclosed in which is coupled via a tapered waveguide.

Patent Document 4, an external cavity type semiconductor laser is disclosed which combines a semiconductor laser array and the optical path converting element.

Patent Document 5, an external cavity type semiconductor laser is disclosed which combines the reflector inclined with semiconductor laser arrays.

JP-3-102887 discloses JP 2004-71694 JP Patent No. 4271704 Publication Patent No. 4002286 Publication Patent No. 4024270 Publication

Although it is effective to increase the volume of the laser medium to obtain a laser oscillation of high output, in this case, unification or lower modes of transverse modes becomes difficult. The present invention while a large output of the laser oscillation output, and an object thereof is to unify or lower modes the transverse mode.

Further, when unification or lower modes of transverse mode and reduction of the size of the resonator, and to realize a compact laser oscillator.

In order to solve the above problems, an external-cavity semiconductor laser of the present invention, an external resonator type semiconductor laser having a semiconductor laser chip and the external optical system, the semiconductor laser chip is in broad area type semiconductor laser , the substrate in-plane direction of the broad area semiconductor laser, there are optical confinement transverse mode becomes multimode optical waveguide function, light confining function of the transverse mode is single-mode in the direction perpendicular to the substrate There, the first facet is high reflection coated been subjected to the second end surface of the non-reflective coating is applied, a second end surface and the external optical system is optically coupled to the semiconductor in the external optical system wherein the spatial filter for limiting the optical path of the substrate in-plane direction of the laser chip is provided.

According to the present invention, it is used a broad area semiconductor laser chip having a large active area, in order spatial filter for limiting the optical path of the substrate in-plane direction of the semiconductor laser chip in the external optical system is provided, the optical path There is limited, as a result, it is possible to unify or lower modes of the transverse mode of laser oscillation.
The laser of the present invention is suitable for applications where laser transverse mode is controlled by the high output is required. For example, processing laser light source, the excitation light source of the processing laser, the excitation light source of the rare earth doped optical fiber amplifiers, and are suitable for the excitation light source of the Raman amplifier.

The structure of the external cavity type semiconductor laser 10 of the first embodiment of the present invention is a schematic diagram showing. It is a schematic diagram showing a configuration of a second embodiment external cavity type semiconductor laser 20 of the present invention. It is a schematic diagram showing the structure of a thin film solid state laser 40 of the third embodiment of the present invention. The structure of the external cavity type semiconductor laser 50 of the fourth embodiment of the present invention is a schematic diagram showing. It is a schematic diagram showing the configuration of an external cavity type semiconductor laser 60 of the fifth embodiment of the present invention. It is a schematic diagram showing the structure of a thin film solid state laser 70 of the sixth embodiment of the present invention. The solid laser 80 configuration of the seventh embodiment of the present invention is a schematic diagram showing. The structure of the semiconductor laser array chip 91 used in the eighth embodiment of the present invention is a schematic diagram showing. It is a schematic diagram showing the configuration of an external cavity type semiconductor laser 100 of the ninth embodiment of the present invention. It is a schematic diagram showing the configuration of an external cavity type semiconductor laser 110 of the tenth embodiment of the present invention. It is a schematic diagram showing the configuration of the eleventh embodiment external cavity type semiconductor laser 120 of the present invention. It is a schematic diagram showing the configuration of a twelfth embodiment external cavity type semiconductor laser 130 of the present invention. It is a schematic diagram showing the configuration of a thirteenth embodiment external cavity type semiconductor laser 140 of the present invention. It is a schematic diagram showing the configuration of a fourteenth embodiment external cavity type semiconductor laser 150 of the present invention. It is a schematic diagram showing the configuration of a fifteenth embodiment external cavity type semiconductor laser 160 of the present invention. It is a schematic diagram showing the configuration of an external cavity type semiconductor laser 170 of the sixteenth embodiment of the present invention. The configuration of the seventeenth embodiment the semiconductor laser 180 of the present invention is a schematic diagram showing. The configuration of the eighteenth embodiment semiconductor laser 200 of the present invention is a schematic diagram showing.

Hereinafter, an embodiment of the semiconductor laser according to the present invention with reference to the drawings. But the present invention is not limited by this embodiment. In the drawings, the same components are denoted by the same reference numerals.

[First embodiment]
It shows the configuration of an external cavity type semiconductor laser 10 of the first embodiment of the present invention in FIG. External cavity type semiconductor laser 10 is a broad area semiconductor laser chip 1, a lens 5, the spatial filter 6, a cylindrical lens 7 and,, and a partial reflection mirror 8. Lens 5, the spatial filter 6, a cylindrical lens 7 and, by partial reflection mirror 8, outside the optical system is formed.

1 (a) is a view of the external cavity type semiconductor laser 10 from the upper surface side of the broad area semiconductor laser chip 1. 1 (b) is a view of the external cavity type semiconductor laser 10 from the side of the broad area semiconductor laser chip 1. 1 (c) is a diagram showing the structure of a spatial filter 6. Figure 1 (d) is a diagram showing a slab optical waveguide 12 that can replace the spatial filter 6. In Figure 1 there is shown a coordinate axis by an arrow.

Broad area semiconductor laser chip 1 has an active region 2 on the substrate. The active region 2 is sufficiently large, the substrate surface in the direction of the active region 2 (coordinate Y direction) functions as a multimode optical waveguide. On the other hand, in the vertical direction with respect to the substrate of the active region 2 (coordinate Z direction) it has an optical confinement capabilities such as to function as a single-mode optical waveguides. Incidentally, the coordinate axis X direction is the traveling direction of the laser beam, the coordinate axis Y direction is perpendicular to the traveling direction of the laser beam.

The end face 3 of the broad area semiconductor laser chip 1 high reflectance coating (98% reflectance) is applied. Further, the end face 4 of the broad-area semiconductor laser chip 1 non-reflective coating (0.1% or less reflectivity) is applied. Therefore, laser oscillation does not occur in the broad area semiconductor laser chip 1 alone. By combining broad area semiconductor laser chip 1 and the external optical system, the laser light is generated.

Broad area semiconductor laser chip 1 is composed of GaAs material. However, the material system of the broad area semiconductor laser chip 1 is not limited to GaAs-based, it may be any material system.

Fabry-Perot resonator with the end surface 3 and the partial reflection mirror 8 is formed. The resonator lens 5 provided during, the spatial filter 6, and has transverse mode is limited by the cylindrical lens 7, lasing of single mode occurs. Some of the generated laser light is extracted from the partial reflection mirror 8 as output light 11.

As shown in FIG. 1 (a), for the coordinate axis Y direction, the lens 5 is light from broad area semiconductor laser chip 1 is focused into a slit-shaped opening (aperture) 9 of the spatial filter 6. Light from the opening (aperture) 9 is changed into parallel light by the cylindrical lens 7 is incident on the partial reflection mirror 8 is output mirror.

As shown in FIG. 1 (b), for the coordinate direction Z, after the light from the broad area semiconductor laser chip 1 has been changed into parallel light by the lens 5, the opening 9, through the cylindrical lens 7, a partial reflection mirror incident to 8.

In the external cavity type semiconductor laser 10, the coordinate axes Z-direction, the optical waveguide structure of the broad area semiconductor laser chip 1, the transverse mode is restricted to be a single mode. Also, the coordinate axis Y direction, the transverse mode is single mode in the optical path is limited by the spatial filter 6. As a result, the external cavity type semiconductor laser 10 is lasing in a single transverse mode.

Figure 1 (c) shows the structure of a spatial filter 6. The spatial filter 6 is a structure in which a slit-shaped opening 9 in the light-shielding portion. After the spatial filter 6 is provided with an opening 9 to photo-etching the metal, which was painted black, subjected to photoetching to provide a light shielding material such as metal onto the glass substrate was further subjected to electrodeposition coating of black or the like can be used things.

By adjusting the size of the opening 9 of the spatial filter 6, the external cavity type semiconductor laser 10, it is also possible to produce a low-order multi-mode laser oscillation.
Figure 1 (d) shows another example of alternative spatial filter 6. Slab optical waveguide 12 includes a core layer 13 for guiding light. Slab optical waveguide 12 performs confinement of the single mode light in the Y direction. Therefore slab waveguide 12 functions as a spatial filter.

In Figure 1, the lens 5 and the cylindrical lens 7 may be replaced by reflective optics. Alternatively, it is also possible to use an optical system combining a reflecting mirror and a lens.

The end face 3 and the end face 4 of the broad-area semiconductor laser chip 1 may be provided with window area. The laser output can either large output by providing a window region.

Instead of the broad area semiconductor laser chip 1, it is also possible to use a waveguide-type solid-state laser. Transverse mode is single in the vertical direction with respect to the substrate, optical waveguide-type solid-state laser transverse mode becomes multimode a direction parallel to a substrate, it can substitute for broad area semiconductor laser chip 1 of this embodiment it can. This is true of the structure shown in structure and 9 shown in FIG. 4 which will be described later.

According to this embodiment, since cause laser oscillation by a broad area semiconductor laser chip 1 having a wide active region 2, it is possible to obtain a laser beam of high output. Moreover, by controlling the mode of the laser oscillation by a spatial filter 6, the single mode laser oscillation, or it is possible to obtain laser oscillation of lower modes. In the configuration of FIG. 1, when there is no non-reflective coating on the end surface 3, the laser oscillation corresponding to the transverse mode in the substrate surface of the active region 2 (coordinate Y direction) (multimode) occurs. However, in the present embodiment, since the antireflection coating is applied on the end surface 3, the laser oscillation corresponding to such transverse mode (multi-mode) are suppressed. As a result, laser oscillation corresponding to the transverse mode that is limited by the external optics is generated. That is, single transverse mode onset properly can obtain the laser oscillation of the low-order transverse mode.

[Second Embodiment]
It shows the configuration of a second embodiment external cavity type semiconductor laser 20 of the present invention in FIG. External cavity type semiconductor laser 20 external cavity VCSEL (vertical cavity surface emitting laser) chip 21, a lens 25, a spatial filter 26, lens 27 and has a partially reflecting mirror 28. Lens 25, the spatial filter 26, lens 27, and partially reflecting mirror 28, the external optical system is formed. The spatial filter 26 has a pinhole-shaped openings 29.

2 (a) is a diagram showing the configuration of an external cavity type semiconductor laser 20. Figure 2 (b) is a sectional view of a VCSEL chip 21. The VCSEL chip 21 can be provided a wide light-emitting region. Figure 2 (c) is a diagram showing an optical fiber 37 to replace the spatial filter 26.

External cavity VCSEL chip 21 as shown in FIG. 2 (b), a substrate 22, a semiconductor multilayer Bragg grating 23, the lower cladding layer 32, active layer 24, upper cladding layer 33, and consists of the electrode 34. The light exit portion 36 from the upper cladding layer 33, non-reflective coating layer 39 is applied. Non-reflection coating layer 39 may serve as a passivation film.

External cavity VCSEL chip 21 has a light confining function to have the transverse mode of the multi-mode substrate plane direction. Further, the electrode 34, the multi-mode region is divided into a plurality. The laser beam output is small, it is also possible to use only a single multi-mode region.

In a typical VCSEL chip but is another semiconductor multilayer Bragg grating on the upper cladding layer 33 is provided, not provided in the external cavity VCSEL chip 21.

A contact layer (not shown) between the upper cladding layer 33 and the electrode 34 of the external cavity VCSEL chip 21 is provided.

Emitted light 35 from the external cavity VCSEL chip 21 lens 25, a spatial filter 26, through the lens 27 reaches the partial reflection mirror 28, return light occurs is reflected here. In the optical path is limited by the spatial filter 26, laser oscillation in a single transverse mode in the external cavity type semiconductor laser 20 is caused. The laser light generated is removed from the partial reflection mirror 28 as output light 31.

By adjusting the size of the opening 29 of the spatial filter 26, the external cavity type semiconductor laser 20, it is also possible to produce a low-order multi-mode laser oscillation.

Figure 2 (c) shows another example of alternative spatial filter 26. Optical fiber 37 has a core 38 for guiding light. Since the optical fiber 37 is an optical fiber of a single transverse mode, functions as a spatial filter. It is also possible to use an optical waveguide in place of the optical fiber 37.

In Figure 2, the lens 25 and the lens 27 may be replaced by reflective optics. Alternatively, it is also possible to use an optical system combining a reflecting mirror and a lens.

According to this embodiment, since cause laser oscillation by the external resonator type VCSEL chip 21 having a wide light-emitting region, it is possible to obtain a laser beam of high output. Moreover, by controlling the mode of the laser oscillation by the spatial filter 26, single-mode laser oscillation, or it is possible to obtain laser oscillation of lower modes.

[Third embodiment]
Figure 3 shows the structure of a thin film solid state laser 40 of the third embodiment of the present invention in (a). Thin solid-state laser 40 is a thin film solid state laser chip 41, a lens 25, a spatial filter 26, lens 27, and partially reflecting mirror 28. Thin solid state laser chip 41 is provided on the heat sink 43. Active region 42 is provided in the thin film solid state during the laser chip 41.

Active region 42 has an optical confinement function transverse mode becomes multimode in-plane direction of the thin film solid state laser chip 41.

Thin solid state laser chip 41 can be used as the YAG crystal, YAG-based ceramic. The active region 42 such as Nd or Yb is doped. Material of the thin film solid state laser chip 41 is not limited to YAG. Material of the thin film solid state laser chip 41 is not limited to YAG, doping element also can be used arbitrary.

Thin solid state laser chip 41 is laterally excited by the excitation light 44. It is also possible to carry out the oblique excited using excitation light 45. If the thin film solid state laser chip 41 is laterally excited by the excitation light 44 can be close to the lens 25 and the thin-film solid-state laser chip 41. On the other hand, the thin film solid state laser chip 41 if they are obliquely excited by the excitation light 45, a lens 25 and a thin solid excitation light 45 to expand the distance between the laser chip 41 is necessary to provide a space for entering.

As shown in FIG. 3 (b), on the surface of the heat sink 43 side of the thin film solid state laser chip 41 is a high reflectance coating layer 46 is provided. High reflectance coating layer 46 of the thin-film solid-state laser chip 41, lens 25, the spatial filter 26, lens 27, and partially reflecting mirror 28, the resonator optical system is formed. The spatial filter 26 has a pinhole-shaped openings 29.

It is also possible to provide a separate reflector in place of the high reflectance coating layer 46.

Thin solid state laser chip light from the 41 lens 25, a spatial filter 26, through the lens 27 reaches the partial reflection mirror 28, return light occurs is reflected here. In the optical path is limited by the spatial filter 26, laser oscillation in a thin film solid state laser 40 in a single transverse mode occurs.

By adjusting the size of the opening 29 of the spatial filter 26, the external cavity type semiconductor laser 20, it is also possible to produce a low-order multi-mode laser oscillation. It is also possible to use an optical fiber 37 in place of the spatial filter 26.

In Figure 2, the lens 25 and the lens 27 may be replaced by reflective optics. Alternatively, it is also possible to use an optical system combining a reflecting mirror and a lens.

According to this embodiment, since cause laser oscillation by a thin film solid state laser chip 41 having a wide active region 42, it is possible to obtain a laser beam of high output. Moreover, by controlling the mode of the laser oscillation by the spatial filter 26, single-mode laser oscillation, or it is possible to obtain laser oscillation of lower modes.

Thin solid-state lasers, as compared to solid-state laser using a rod-shaped laser crystals, thin-film solid-state laser chip is very small. However, in order to unify or low Tsugika the transverse mode of the laser beam, it is necessary to increase the length of the optical resonator. Therefore, the size of the laser oscillator has fallen into sized to not much solid-state laser using a rod-shaped laser crystals.

According to this embodiment, even with a shorter length of the resonator by shortening the focal length of the lens 25 and the lens 27, by choosing the size of the pinhole-like openings 29 appropriately, the laser beam single mode or low order mode can be realized in. Therefore, it can be miniaturized laser oscillator.

In particular, when excited laterally by the excitation light 44 a thin film solid state laser chip 41, it is possible to close the lens 25 and the semiconductor laser chip 41, it is very effective to miniaturize the laser oscillator.

[Fourth Embodiment]
Figure 4 shows the configuration of a fourth embodiment external cavity type semiconductor laser 50 of the present invention. 4 (a) is a view of the external cavity type semiconductor laser 50 from the upper surface side of the broad area semiconductor laser chip 1. FIG. 4 (b) is a view of the external cavity type semiconductor laser 50 from the side of the broad area semiconductor laser chip 1.

External cavity type semiconductor laser 50 is a broad area semiconductor laser chip 1, a cylindrical lens 51, lens 52, and an output optical fiber 53. Output optical fiber 53 is transverse mode is single and the fiber Bragg grating 54 is provided. A cylindrical lens 51, a lens 52 and, the external optical system is formed by a fiber Bragg grating 54.

The broad area semiconductor laser light from the chip 1 a cylindrical lens 51 to be collimated coordinate axis Z direction, is guided to the output optical fiber 53 by the lens 52. Then, it is reflected by the fiber Bragg grating 54 provided on the output optical fiber 53, is fed back to the broad area semiconductor laser chip 1 follows a reverse path.

As previously mentioned, the active region 2 of the broad area semiconductor laser chip 1, functions as a single mode optical waveguide in a direction perpendicular to the substrate. Light emitted from a single mode optical waveguide has a divergence angle, not a parallel beam. Therefore, it is necessary to parallel light in free space using a cylindrical lens 51. In the configuration of FIG. 4, the cylindrical lens 51 is not, the coupling coefficient of the active region 2 and the output optical fiber 53 becomes significantly small ones, light loss becomes very large.

Fabry-Perot resonator with the end surface 3 and the fiber Bragg grating 54 is formed. And the transverse mode is limited by the output optical fiber 53, the laser oscillation of a single mode occurs. It is also possible to use a multimode optical fiber as the output optical fiber 53. In this case, the transverse mode laser oscillation of the multi-mode occurs. By proper selection of the output optical fiber 53, it is possible to control the transverse mode of the laser oscillation of the external resonator type semiconductor laser 50.

According to this embodiment, since cause laser oscillation by a broad area semiconductor laser chip 1 having a wide active region 2, it is possible to obtain a laser beam of high output. Moreover, by controlling the mode of the laser oscillation by the output optical fiber 53, the single-mode laser oscillation, or it is possible to obtain laser oscillation of lower modes.

The vertical mode of the laser oscillation by using a fiber Bragg grating 54 are also controllable, it is also possible to realize a single longitudinal mode oscillation.

Furthermore, the generated laser beam 55 is so coupled to the output optical fiber 53, output optical fiber 53 can be guided to the laser beam 55 to any location with.

Is provided with the fiber Bragg grating 54 to the output optical fiber 53 also occurs advantage number of parts is reduced. Number of parts in terms of serving as a coupling optical system to the optical system output optical fiber 53 for the laser oscillation is reduced.

Patent Document 3, a wide stripe semiconductor laser (broad area semiconductor laser) a single-mode waveguide, an external cavity type semiconductor laser is disclosed in which is coupled via a mode converter using a prism. In this configuration, the conversion ratio of the mode converter is a problem that a relatively small, about 2 to 3. That is, the mode converter using a prism is suitable for the ratio of the major axis and the minor axis of the laser beam for converting the laser beam from 2 3 to the laser beam of the perfect circle (major axis / minor axis = 1), extremely long diameter and a ratio of short diameter larger laser beam can not be handled. For this reason, can not be so wide a stripe width of the wide stripe semiconductor laser (broad area type semiconductor laser), it is difficult to large output power of the laser light.

In contrast, in the configuration of this embodiment is carried out conversion of the laser beam using a cylindrical lens 51 (spherical) lens 52. In this approach, there is no limit to the short diameter and long diameter ratio of the laser beam. Therefore, the laser beam large output can be realized because it wider stripe width of the wide stripe semiconductor laser (broad area semiconductor laser).

Further, Patent Document 3, a and fiber grating of wide stripe semiconductor laser (broad area semiconductor laser), an external cavity type semiconductor laser is disclosed in which it is coupled via a tapered waveguide. In this configuration, would be mode conversion occurs in the tapered waveguide, loss of light is large. In particular, large optical losses in the path toward the wide stripe semiconductor laser (broad area semiconductor laser) side is generated from the single-mode waveguide (optical fiber) side. Therefore, the efficiency of laser oscillation is lowered.

In contrast, in the configuration of this embodiment is carried out conversion of the laser beam using a cylindrical lens 51 and the lens 52. In this technique, light loss as described above does not occur. Therefore the efficiency of laser oscillation is not lowered.

In the present embodiment, it is possible to replace the cylindrical lens 51 to the cylindrical mirror. Further, it is possible to replace the lens 52 to the concave mirror.

Similarly, in the configuration of FIG. 1, it is possible to replace the lens 5 to the concave mirror. Further, it is possible to replace the cylindrical lens 7 in the cylindrical mirror.

Similarly, it is possible to replace in the configuration of FIG. 2 or FIG. 3, the lens 27 and the partial reflection mirror 28 to one of the concave reflecting mirror (partial reflection mirror). In this configuration reduces the number of parts, there is an advantage that also decreases man-hours for optical alignment.

[Fifth embodiment]
It shows the configuration of a fifth embodiment external cavity type semiconductor laser 60 of the present invention in FIG. External cavity type semiconductor laser 60 is provided with external cavity VCSEL (vertical cavity surface emitting laser) chip 21, a lens 25, an output optical fiber 53. Output optical fiber 53 is transverse mode is single and the fiber Bragg grating 54 is provided. Lens 25 and, the external optical system is formed by a fiber Bragg grating 54.

The configuration of the external cavity VCSEL chip 21 is as described in the second embodiment.

Emitted light 35 from the external cavity VCSEL chip 21 is coupled to the output optical fiber 53 by the lens 25, the fiber Bragg grating 54, a portion is reflected. The reflected light is fed back to the external cavity VCSEL chip 21 follows a reverse path. Feedback light is amplified, again, leading to a fiber Bragg grating 54 through the lens 25. As a result, laser oscillation occurs.

And the transverse mode is limited by the output optical fiber 53, the laser oscillation of a single mode occurs. The use of multi-mode optical fiber as an output optical fiber 53, it is possible to control the degree of transverse mode oscillation.

According to this embodiment, since cause laser oscillation by the external resonator type VCSEL chip having a large active area, it is possible to obtain a laser beam of high output. Moreover, by controlling the mode of the laser oscillation by the output optical fiber 53, the single-mode laser oscillation, or it is possible to obtain laser oscillation of lower modes.

The vertical mode of the laser oscillation by using a fiber Bragg grating 54 are also controllable, it is also possible to realize a single longitudinal mode oscillation.

Further, the laser light generated so coupled to the output optical fiber 53, output optical fiber 53 can be guided to the laser beam to any location using.

Is provided with the fiber Bragg grating 54 to the output optical fiber 53 also occurs advantage number of parts is reduced. Number of parts in terms of serving as a coupling optical system to the optical system output optical fiber 53 for the laser oscillation is reduced.

[Sixth embodiment]
It shows the structure of a thin film solid state laser 70 of the sixth embodiment of the present invention in FIG. 6. Thin solid-state laser 70 is provided with thin-film solid-state laser chip 41, a lens 25, an output optical fiber 53. Output optical fiber 53 is transverse mode is single and the fiber Bragg grating 54 is provided. Lens 25 and, the external optical system is formed by a fiber Bragg grating 54.

Thin solid state laser chip 41 is provided on the heat sink 43. Active region 42 is provided in the thin film solid state during the laser chip 41. Configuration of a thin film solid state laser chip 41 is as described in the third embodiment.

Light from the thin film solid state laser chip 41 is coupled to the output optical fiber 53 by the lens 25, the fiber Bragg grating 54, a portion is reflected. The reflected light is fed back to the thin film solid state laser chip 41 follows a reverse path. Feedback light is amplified, again, leading to a fiber Bragg grating 54 through the lens 25. As a result, laser oscillation occurs.

And the transverse mode is limited by the output optical fiber 53, the laser oscillation of a single mode occurs. The use of multi-mode optical fiber as an output optical fiber 53, it is possible to control the degree of transverse mode oscillation.

According to this embodiment, since cause laser oscillation by a thin film solid state laser chip 41 having a wide active region, it is possible to obtain a laser beam of high output. Moreover, by controlling the mode of the laser oscillation by the output optical fiber 53, the single-mode laser oscillation, or it is possible to obtain laser oscillation of lower modes.

The vertical mode of the laser oscillation by using a fiber Bragg grating 54 are also controllable, it is also possible to realize a single longitudinal mode oscillation.

Further, the laser light generated so coupled to the output optical fiber 53, output optical fiber 53 can be guided to the laser beam to any location using.

Is provided with the fiber Bragg grating 54 to the output optical fiber 53 also occurs advantage number of parts is reduced. Number of parts in terms of serving as a coupling optical system to the optical system output optical fiber 53 for the laser oscillation is reduced.

[Seventh embodiment]
Showing a solid laser 80 configuration of the seventh embodiment of the present invention in FIG. Solid-state laser 80, a reflecting mirror 82, the solid-state laser rod 81, lens 25, and an output optical fiber 53. Output optical fiber 53 is transverse mode is single and the fiber Bragg grating 54 is provided. Lens 25 and, the external optical system is formed by a fiber Bragg grating 54.

Solid-state laser rod 81 may be used YAG crystal, and YAG-based ceramic. Such as Nd and Yb is doped into the solid-state laser rod 81. Material of the solid-state laser rod 81 is not limited to YAG. The active region 42 such as Nd or Yb is doped. Material of the solid-state laser rod 81 is not limited to YAG, doping elements can be used arbitrary. The solid-state laser rod 81 is a cylindrical shape, it is also possible to use a slab-like shape.

Solid-state laser rod 81 is laterally excited by the excitation light 83. It is also possible to carry out the end pumping using excitation light 84. When performing an end-pumped with a pump light 84, the reflector 82, the laser oscillation light is reflected, excitation light 84 is configured to transmit.

In the solid-state laser rod 81 is perpendicular to the laser oscillation direction in a plane, transverse mode has a light confining function becomes multimode. Many of the solid-state laser rod meets these conditions.

Light from the solid-state laser rod 81 is coupled to the output optical fiber 53 by the lens 25, the fiber Bragg grating 54, a portion is reflected. The reflected light is fed back to the thin film solid state laser chip 41 follows a reverse path. Feedback light is amplified, again, leading to a fiber Bragg grating 54 through the lens 25. As a result, laser oscillation occurs.

And the transverse mode is limited by the output optical fiber 53, the laser oscillation of a single mode occurs. The use of multi-mode optical fiber as an output optical fiber 53, it is possible to control the degree of transverse mode oscillation.

According to this embodiment, since cause laser oscillation by a solid state laser rod 81 having a wide active region, it is possible to obtain a laser beam of high output. Moreover, by controlling the mode of the laser oscillation by the output optical fiber 53, the single-mode laser oscillation, or it is possible to obtain laser oscillation of lower modes.

The vertical mode of the laser oscillation by using a fiber Bragg grating 54 are also controllable, it is also possible to realize a single longitudinal mode oscillation.

Further, the laser light generated so coupled to the output optical fiber 53, output optical fiber 53 can be guided to the laser beam to any location using.

Is provided with the fiber Bragg grating 54 to the output optical fiber 53 also occurs advantage number of parts is reduced. Number of parts in terms of serving as a coupling optical system to the optical system output optical fiber 53 for the laser oscillation is reduced.

Eighth Embodiment
Shows the structure of a semiconductor laser array chip 91 used in the eighth embodiment of the present invention in FIG. 8 (a). On the semiconductor laser array chip 91 includes a plurality of active regions 92 are provided. Active region 92, respectively, functions as a multimode optical waveguide in the substrate plane direction (coordinate Y direction). Unexcited region 96 which is not current is injected between the plurality of active regions 92 are provided. Absorption of the non-excitation region 96 in the laser light is generated.

The end face 93 of the semiconductor laser array chip 91 high reflectance coating (98% reflectance) is applied. Further, the end face 94 of the broad area semiconductor laser chip 1 non-reflective coating (0.1% or less reflectivity) is applied.

In the configuration shown in FIG. 1, it is possible to use a semiconductor laser array chip 91 in place of the broad area semiconductor laser chip 1.

As shown in FIG. 8 (b), a parasitic oscillation light 95 in the coordinate axis Y direction when extending the width of the active region of the broad area semiconductor laser chip 1 is apt to occur. With the semiconductor laser array chip 91, between the plurality of active regions 92, for absorption of the laser light by the non-excitation region 96 (loss) occurs, can suppress such parasitic oscillation. It is also possible to cause the loss of the laser beam using other means between the active region 92.

In the configuration shown in FIG. 4, it is possible to use a semiconductor laser array chip 91 in place of the broad area semiconductor laser chip 1. Again, the effect of suppressing the parasitic oscillation axes Y direction.

[Ninth embodiment]
It shows the external cavity semiconductor laser 100 configuration of the ninth embodiment of the present invention in FIG. 9 (a) is a view of the external cavity type semiconductor laser 100 from the top side of the broad area semiconductor laser chip 1. 9 (b) is a view of the external cavity type semiconductor laser 100 from the side of the broad area semiconductor laser chip 1. Figure 9 (c) is a diagram showing another configuration of a partial reflection mirror.

External cavity type semiconductor laser 100 is a broad area semiconductor laser chip 1, a cylindrical lens 51 and, includes a partial reflection mirror 101. A cylindrical lens 51 and, the external optical system is formed by a partial reflection mirror 101. The laser light generated is taken out as output light 102.

Partial reflection mirror 101 is a plane mirror. Partial reflection mirror 101 in place, it is also possible to use a concave mirror 103 as shown in FIG. 9 (c).

Light from a broad area semiconductor laser chip 1 by the cylindrical lens 51 to be collimated coordinate axis Z direction, is guided to the partial reflection mirror 101. Then, it is reflected by the partial reflection mirror 101, is fed back to the broad area semiconductor laser chip 1 follows a reverse path. Fabry-Perot resonator with the end surface 3 and the partial reflection mirror 101 is formed.

Compared distance of the end face 3 and the partial reflection mirror 101 in the width of the active region 2 (the length of the active region 2 Y-axis direction), sufficient, by taking large, controlled lateral mode to the low order mode or a single mode can do.

Instead of the broad area semiconductor laser chip 1, it is also possible to use a semiconductor laser array chip 91 shown in FIG.

This embodiment, as compared with the configuration shown in FIG. 1, there is the advantage that fewer parts. However, the length of the resonator is required to be longer than the structure shown in FIG.

[Tenth embodiment]
It shows the configuration of the tenth embodiment external cavity type semiconductor laser 110 of the present invention in FIG. 10. External cavity type semiconductor laser 110 is external cavity VCSEL (vertical cavity surface emitting laser) chip 21 and includes a partial reflection mirror 111.

The configuration of the external cavity VCSEL chip 21 is as described in the second embodiment.

Emitted light 35 from the external cavity VCSEL chip 21 by the partial reflection mirror 111, a portion is reflected. The reflected light is fed back to the external cavity VCSEL chip 21. Feedback light is amplified, again, it leads to partial reflection mirror 111. As a result, laser oscillation occurs. Some of the resulting laser beam is taken out as output light 112.

Compared distance of external cavity VCSEL chip 21 and partial reflection mirror 111 in the width of the active region, well, by taking large, it is possible to control the transverse mode to the low order mode or a single mode.

The partially reflecting mirror 111, it is possible to use a plane mirror, both concave mirrors.

This embodiment, as compared with the configuration shown in FIG. 2, there is the advantage that fewer parts. However, the length of the resonator is required to be longer than the configuration shown in FIG.

[Eleventh Embodiment]
It shows the configuration of the eleventh embodiment external cavity type semiconductor laser 120 of the present invention in FIG. 11. This embodiment is a modification of the external cavity type semiconductor laser 50 shown in FIG. 11 (a) is a view of the external cavity type semiconductor laser 120 from the top side. Figure 11 (b) is a view of the external cavity type semiconductor laser 120 from the side.

As shown in FIG. 11 (b) 11 and (a), an external cavity type semiconductor laser 120 is a semiconductor laser array chip 91 in place of the broad area semiconductor laser chip 1. Further, between the cylindrical lens 51 and the lens 52 is provided with aperture 121 and the plane reflecting mirror 122. Further, instead of the output optical fiber 53 is provided with a multi-mode optical fiber 123. Aperture 121 has a semiconductor laser active regions 92 of the array chips 91 (92a, 92b, 92c, 92d) an opening corresponding to.

The semiconductor laser array chip 91, as described above, the substrate surface in the direction of the active region 92 (axis Y direction) functions as a multimode optical waveguide. On the other hand, in the vertical direction with respect to the substrate in the active region 92 (axis Z-direction) it has an optical confinement capabilities such as to function as a single-mode optical waveguides.

The external cavity type semiconductor laser 120, a Fabry-Perot resonator is formed by the end face 93 and the plane reflecting mirror 122. Since the optical path by the aperture 121 is separated, the active region 92a of the semiconductor laser array chip 91, 92b, 92c, and a laser beam 124a so as to correspond to 92d, 124b, 125c and, 125d are formed. Laser beam 124a, 124b, 125c and, the laser beam 124 is a set of 125d transverse mode is the multi-mode, is coupled to a multimode optical fiber 123 as output light is focused by the lens 52.

Incidentally, the apertures 121 may be provided plurality in the optical path. By providing a plurality of apertures 121, it is possible to increase the degree of separation of the light path. Or as an aperture 121, it may be used an aperture having a thickness in the laser beam 124 direction. With this configuration, it is possible to increase the degree of separation of the light path.

Laser beam 124a, 124b, 125c and, to transverse modes 125d can be a single-mode, it may be relatively low order transverse mode. Laser beam 124a, 124b, 125c, and can be coupled as the order of the transverse mode 125d is small, a larger number of individual laser beam to a multi-mode optical fiber 123 having the same core diameter.

In this configuration, by optical alignment of the plane reflecting mirror 122, first, it is possible to adjust the generation of the laser beam 124. Then, it is possible to adjust the introduction into the multimode optical fiber 123 of the laser beam 124 by the optical alignment of the lens 52 and a multimode optical fiber 123. Since the stepwise optical alignment can be performed, it is easy to adjust.

On the other hand, the adjustment of the introduction of laser light to adjust an optical fiber 53 of the laser oscillation in the configuration shown in FIG. 4, carried out simultaneously by the optical alignment of the optical fiber 53. In this case, when the optical positional relationship is misaligned, the laser light is not generated, the target optical alignment without difficult adjustment. Such problem is not the configuration shown in FIG. 11.

The width w of the active region 92, the cavity length L is desirably sufficiently large. The resonator length L is the distance from the end face 93 as shown in FIG. 11 to the reflecting surface of the plane reflecting mirror 122. Width w and the ratio of cavity length L of the active region 92, specifically, L / w ≧ 100 is desirable. For example, for w = 100 [mu] m is preferably set to L ≧ 1 cm. The greater this ratio, the laser beam 124a, 124b, 125c, and the transverse mode 125d becomes low order.

In this case, the laser beam 124a, 124b, 125c, and the transverse mode 125d, in particular, refers to the transverse mode of the substrate surface in the direction of the active region 92 (axis Y direction). The direction perpendicular to the substrate of the active region 92 (axis Z-direction), the semiconductor laser array chip 91 functions as a single mode optical waveguide. Therefore, in this direction the laser beam of single mode are formed.

In this embodiment, since a semiconductor laser array chip 91, it is possible to reduce the width w of the active region 92 from the broad area semiconductor laser chip 1. Thus, higher L / w can be obtained even with a short cavity length.

Relationship of the ratio of the width w and the resonator length L of the active region is also true in the case of FIG. In the case of Figure 9, the width of the active region 2 is assumed to be 1 mm, the resonator length L ≧ 10 cm is preferred. On the other hand, if it is inserted the spatial filter 6 in the resonator, such as FIG. 1, since the lateral mode control is performed by the spatial filter 6, the ratio of L / w may be small. That is, the structure of introducing a spatial filter in the resonator can be advantageously miniaturized resonator.

Plane reflecting mirror 122 may be a reflection type filter for partially reflecting only a specific wavelength. For example, when the reflective filter that reflects a center wavelength of 976nm the plane reflecting mirror 122, laser beam 124 becomes a wavelength 976nm. This wavelength is suitable for exciting the optical amplification fiber having a core doped ytterbium (Yb) to the silica.

The plane reflecting mirror 122, as an example, it is possible to use a glass having a dielectric multilayer film on the surface. According to this configuration, it is possible to adjust the peak wavelength of the reflectance of the plane reflecting mirror 122, and reflectance over a wide range.

Incidentally, be configured to reflect only a specific wavelength reflector, partial reflection mirror 8 in FIG. 1, the partial reflection mirror 28 in FIG. 2, and, also be applied to such partial reflection mirror 101 in FIG. 9 it can. External cavity semiconductor laser having such a configuration is suitable for excitation of the solid-state laser having an absorption region in a narrow wavelength range.

According to the configuration of the present embodiment, it is optically separated by the optical path an aperture 121 corresponding to each active region 92 in the external optical system. Therefore, the laser beam of a single transverse mode or low order transverse mode is generated corresponding to each active region 92. As a result, the laser beam 124 which is a set of laser light generated in each active region 92 transverse mode becomes multimode. Optical alignment of a multi-mode optical fiber 123 becomes easier than the output optical fiber of single mode. Further, the multi-mode optical fiber because the core area is large, it is possible to couple more light of the large output.

Furthermore, the transverse mode control becomes easier by the active region 92 of the semiconductor laser array chip 91 are optically separated. When multiple active regions 92 are optically coupled, sometimes complicated super modes are formed. By the aperture 121 can prevent formation of such a super mode.

An external cavity type semiconductor laser 120 in which the plane reflecting mirror 122 and the reflective filter that reflects only a specific wavelength, a combination of optical fiber (active fiber) with amplification effect which is doped with rare earth configuration, an optical amplifier or to function as a laser oscillator. In this configuration, the active fiber can be stably excited, it can realize a stable optical amplifier or a laser oscillator.

Similarly, partial reflection mirror 8 in FIG. 1, the partial reflection mirror 28 in FIG. 2 and the external cavity type semiconductor laser of the partial reflection mirror 101 has a configuration that reflects only a specific wavelength in FIG. 9, the solid-state laser medium configuration that combines functions as an optical amplifier or a laser oscillator. In this configuration, the solid-state laser medium can be stably excited, can realize a stable optical amplifier or a laser oscillator.

[Twelfth Embodiment]
It shows a tenth second embodiment external cavity type semiconductor laser 130 of the configuration of the present invention in FIG. 12. This embodiment is a modification of the external cavity type semiconductor laser 120 shown in FIG. 11. 12 (a) is a view of the external cavity type semiconductor laser 130 from the top side, corresponding to FIG. 11 (a). FIG. 12 (b) is a view of the external cavity type semiconductor laser 130 from the side, corresponding to FIG. 11 (b). 12 (a) is equivalent to the view of FIG. 12 (b) from the arrow A side.

External cavity type semiconductor laser 130 has a plurality of mounts 132 on the cooling surface 134 of the heat sink 133 is provided. On top each mount 132 semiconductor laser array chip 91 are provided in the junction-down.

Above the heat sink 133, the cylindrical lens 51 is provided for each semiconductor laser array chip 91. Between the cylindrical lens 51 and the lens 52, the aperture 131 and the plane reflection mirror 122 is provided. Apertures 131 that are disposed opening two-dimensional is different from the aperture 121.

Mount 132 may be conductive even insulating. Further, it is possible to provide a submount between the mounting 132 and the semiconductor laser array chip 91. Submount may be conductive even insulating.

In the external cavity type semiconductor laser 130, the light emitted from the plurality of semiconductor laser array chip 91 is substantially perpendicular to the cooling surface 134 of the heat sink 133. The light emitted from the plurality of semiconductor laser array chip 91 are arranged two-dimensionally.

The external cavity type semiconductor laser 130, a Fabry-Perot resonator is formed by the end face 93 and the plane reflecting mirror 122. Laser light 124 generated is coupled to the multimode optical fiber 123 as output light is focused by the lens 52.

In the configuration of an external cavity type semiconductor laser 130, the active region 92 of the semiconductor laser array chip 91 are arranged two-dimensionally. As in the case of FIG. 11, also in FIG. 12, the optical path corresponding to each of the active regions 92 of the external optical system is optically separated by the aperture 121. Therefore, the laser beam of a single transverse mode or low order transverse mode is generated corresponding to each active region 92. As a result, the laser beam 124 which is a set of laser light generated in each active region 92 transverse mode becomes multimode.

According to the configuration of the external cavity type semiconductor laser 130, since a plurality of semiconductor laser arrays laser beam 124 generated by the chip 91 is coupled to the output optical fiber 123, a larger output of the laser light can be taken out as output light can.

In the external cavity type semiconductor laser 130, it is possible to replace the semiconductor laser array chip 91 in the broad area semiconductor laser chip. This configuration has the advantage that the structure is simple.

[Thirteenth embodiment]
It shows the configuration of a thirteenth embodiment external cavity type semiconductor laser 140 of the present invention in FIG. 13. This embodiment is a modification of the external cavity type semiconductor laser 120 shown in FIG. 11. 13 (a) shows a view of the external cavity type semiconductor laser 140 from the side. FIG. 13 (b) mounting 141 is provided on the heat sink 133, the semiconductor laser array chip 91, and, a prism-type reflector 142, a view from the upper surface of the heat sink 133.

External cavity type semiconductor laser 140 has a plurality of mounts 141 on the cooling surface 134 of the heat sink 133 is provided. On top each mount 141 semiconductor laser array chip 91 are provided in the junction-down. The prism-type reflector 142 on the cooling surface 134 of the heat sink 133, to obtain Luo et al provided for each semiconductor laser array chip 91.

Above the heat sink 133, in correspondence with the semiconductor laser array chip 91, a cylindrical lens 51 is provided. Between the cylindrical lens 51 and the lens 52, it is provided an aperture 131 and a plane reflecting mirror 122. Aperture 131 is disposed apertures two-dimensionally.

In the external cavity type semiconductor laser 140, the light emitted from the plurality of semiconductor laser array chip 91 is reflected by the prism type reflecting mirror 142, and is emitted in a direction perpendicular to the cooling surface 134 of the heat sink 133. Light emitted from the plurality of semiconductor laser array chip 91 are arranged two-dimensionally.

The external cavity type semiconductor laser 140, a Fabry-Perot resonator is formed by the end face 93 and the plane reflecting mirror 122. Laser light 124 generated is coupled to the multimode optical fiber 123 as output light is focused by the lens 52.

The external cavity type semiconductor laser 140, there is no need to increase the thickness of the mount 1441 even if increasing the length of the active region 92. Therefore, even the active region 92 with a long semiconductor laser array chip 91, the semiconductor laser array chip 91 can be efficiently cooled.

In the external cavity type semiconductor laser 140, it is possible to replace the semiconductor laser array chip 91 in the broad area semiconductor laser chip. This configuration has the advantage that the structure is simple.

[Fourteenth embodiment]
Figure 14 shows the configuration of a fourteenth embodiment external cavity type semiconductor laser 150 of the present invention. This embodiment is a modification of the external cavity type semiconductor laser 120 shown in FIG. 11. Figure 14 (a) is a view of the external cavity type semiconductor laser 150 from the top side. 14 (b) is a view of the external cavity type semiconductor laser 150 from the side. FIG. 14 (b) corresponds to a view as viewed FIG. 14 (a) from an arrow B side.

External cavity type semiconductor laser 150 has a plurality of mounts 132 on the cooling surface 134 of the heat sink 133 is provided. On top each mount 132 broad area semiconductor laser chip 1 is provided in the junction-down. Broad area semiconductor laser chip 1, a broad area semiconductor laser chip 1 in the Y direction (see FIG. 1) is provided to be perpendicular to the cooling surface 134 of the heat sink 133.

On the heat sink 133, the cylindrical lens 51 is provided for each broad area semiconductor laser chip 1. Also, the plane reflecting mirror 122 on the heat sink 133, a cylindrical lens 151, and, 152 are provided. Furthermore, the multi-mode optical fiber 123 is mounted by the support portion 153 on the heat sink 133.

The end surface 3 and the plane reflecting mirror 122 of the broad area semiconductor laser chip 1, the Fabry-Perot resonator is formed. Laser light 124 generated is coupled to the multimode optical fiber 123 as output light is condensed by the cylindrical lens 151 and 152. The laser beam 124 is generated in the direction parallel to the cooling surface 134 of the heat sink 133.

According to the configuration of the external cavity type semiconductor laser 150, a cylindrical lens 51, the plane reflecting mirror 122, a cylindrical lens 151, 152 and the external optical system consisting of a multi-mode optical fiber 123 is formed on the cooling surface 134 of the heat sink 133 It is. Accordingly, cooling surface 134 also functions as a platen for aligning external optics. According to this configuration, there is an advantage that optical alignment is easy.

[Fifteenth embodiment]
It shows the configuration of a fifteenth embodiment external cavity type semiconductor laser 160 of the present invention in FIG. 15. This embodiment is a modification of the external cavity type semiconductor laser 130 shown in FIG. 12. Figure 15 (a) is a view of the external cavity type semiconductor laser 160 from the top side. Figure 15 (b) is a view of the external cavity type semiconductor laser 160 from the side.

External cavity type semiconductor laser 160, instead of the plane reflecting mirror 122 and a multimode optical fiber 123, is provided an optical fiber 162 having a fiber Bragg grating 161. Fabry-Perot resonator is formed by the end face 93 and the fiber Bragg grating 161. Laser light 124 generated is coupled to the optical fiber 162 as output light is focused by the lens 52.

Transverse mode of the optical fiber 162 is a single mode or multimode. The external cavity type semiconductor laser 160, the transverse mode of the laser beam 124 is a single mode or a multimode.

In the external cavity type semiconductor laser 160 has the advantage that the transverse mode can generate a laser beam of single mode. Further, it is possible to control the oscillation wavelength by the fiber Bragg grating 161. Configuration is also simple.

Also in an external cavity type semiconductor laser 140 shown in FIG. 13, it is possible, instead of the plane reflecting mirror 122 and a multimode optical fiber 123, providing an optical fiber 162 having a fiber Bragg grating 161.

[Sixteenth embodiment]
Figure 16 shows the configuration of a sixteenth embodiment external cavity type semiconductor laser 170 of the present invention. This embodiment is a modification of the external cavity type semiconductor laser 120 shown in FIG. 11. 16 (a) is a view of the external cavity type semiconductor laser 170 from the top side, corresponding to FIG. 11 (a). FIG. 16 (b) is a view of the external cavity type semiconductor laser 170 from the side, corresponding to FIG. 11 (b).

As shown in FIG. 16, the external cavity type semiconductor laser 170, the semiconductor laser array chip 91, a cylindrical lens 51, cylindrical lens array 171, the spatial filter 172, cylindrical lens array 173, the plane reflecting mirror 122, a lens 52 and, and a multimode optical fiber 123.

Instead of the aperture 121 in FIG. 11, the cylindrical lens array 171, the spatial filter 172, and cylindrical lens array 173 is provided. The cylindrical lens array 171, the light from the active regions 92 of the semiconductor laser array chip 91 is focused on the spatial filter 171. The cylindrical lens array 173 by changing the light from the spatial filter 171 into a parallel light guided to the plane reflecting mirror 122.

The external cavity type semiconductor laser 160, a Fabry-Perot resonator is formed by the end face 93 and the plane reflecting mirror 122 of the semiconductor laser array chip 91. Laser light 124 generated is coupled to the multimode optical fiber 123 as output light is focused by the lens 52.

Since the optical path is limited by the spatial filter 172, the transverse mode of the laser beam 124 can be lower-order reduction or single mode. This principle is similar to the principle of an external cavity type semiconductor laser 10 shown in FIG. Therefore, the ratio of L / w can be smaller to obtain a laser beam 124 of the lower order mode or single mode.

Cylindrical lens array 171 and 173, as the slow (slow) axis collimator, can be diverted off-the-shelf optical components widely distributed. Slow (slow) axis collimator is an optical component used in combination with a semiconductor laser array, a low-cost and easily available. Therefore, the external cavity type semiconductor laser 160, it is possible to reduce the development cost and product manufacturing costs. Similarly, the cylindrical lens 51 can be used off-the-shelf optical components widely distributed as a phase advance (first) axis collimator.

Incidentally, it is possible to use a spherical lens array in place of the cylindrical lens 51 and the cylindrical lens array 171 (array of lenses corresponding to the lens 5 in FIG. 1) in FIG. 16. This configuration is a modification of an external cavity type semiconductor laser 160, the array structure of the optical system of FIG.

[Seventeenth embodiment]
Figure 17 (a) shows the configuration of a seventeenth embodiment the semiconductor laser 180 of the present invention. The semiconductor laser 180, the conductive mount 181, the conductive submount 183, a broad area semiconductor laser chip 1, the insulator block 184, the electrode 185 and comprises a collimator lens 190.

Mount 181 is provided with an optical system mounting portion 191 having a step structure. Mount 182 is provided with a threaded hole 186 and 187. A collimator lens 190 is provided in the optical system mounting portion 191 of the mount 181.

Submount 183 is bonded on top mount 181, a broad area semiconductor laser chip 1 on the submount 183 is bonded. On the mount 181 is bonded insulator block 184, is on the insulator block 184 electrode 185 is bonded. Electrode 185 and the semiconductor laser chip 182 is connected by a conductive wire 188. Light from a broad area semiconductor laser chip 1 is emitted as a laser beam 193 is converted into parallel light by the collimator 190.

As shown in FIG. 17 (b), the mount 181 to the heat sink 196 is attached using two screws 194.

The semiconductor laser 180 can be applied to an external cavity type semiconductor laser 150 shown in FIG. 14. The semiconductor laser 180 is mounted 132, broad-area semiconductor laser chip 1, and may be substituted for the cylindrical lens 51.

The semiconductor laser 180 can be attached to the heat sink 196 by screws 194, there is an advantage that assembling is easy.

The flat surface portion 192 of the collimator lens 190 is provided a dielectric multilayer film may be a partially reflecting mirror for reflecting the specific wavelength. In this configuration, the semiconductor laser 180 serving as an external-cavity semiconductor laser.

In this configuration, the transverse mode is relatively higher because the shorter length of the resonator, the oscillation wavelength is co-banded. Thus, rod, slab, or is suitable as an excitation light source of the disk-shaped solid-state laser medium.

It is also possible to provide a light guide made of a glass plate in the optical system mounting portion 191 of the semiconductor laser 180. While this configuration is simple structure, possible to prevent the laser beam 193 is eclipsed by the mount 181.

While mounting portions 191 are formed by providing a step on the mount 181 may be a simple planar structure. When using the case and the light guide collimator lens 190 is small, the optical system mounting portion 191 may be planar. Structure optical system mounting portion 191 is a flat surface is easy to manufacture.

[Eighteenth embodiment]
Figure 18 shows the configuration of the eighteenth embodiment semiconductor laser 200 of the present invention in (a). The semiconductor laser 200, the conductive mount 201, a conductive submount 183, a semiconductor laser array chip 91, the insulator block 184, the electrode 185 and comprises a collimator lens 203. Figure 18 (b) is a C-C 'sectional view of the semiconductor laser 200.

Mount 181 is provided with an optical system mounting portion 202 having a step structure. Mount 182 is provided with a threaded hole 186 and 187. A collimator lens 203 is provided in the optical system mounting portion 202 of the mount 181. Light from the semiconductor laser array chip 91 is emitted as a laser beam 204 is converted into parallel light by the collimator lens 203.

The semiconductor laser 180 can be applied to an external cavity type semiconductor laser 130 shown in FIG. 12. The semiconductor laser 180 is mounted 132, the semiconductor laser array chip 91, and may be substituted for the cylindrical lens 51.

The semiconductor laser 200 can be attached to the heat sink using screws, there is an advantage that assembling is easy.

The flat surface portion 205 of the collimator lens 203 is provided a dielectric multilayer film may be a partially reflecting mirror for reflecting the specific wavelength. In this configuration, the semiconductor laser 200 functions as an external-cavity semiconductor laser.

In this configuration, the transverse mode is relatively higher because the shorter length of the resonator, the oscillation wavelength is co-banded. Thus, rod, slab, or are suitable as an excitation light source of the disk-shaped solid-state laser medium.

It is also possible to provide a light guide made of a glass plate in the optical system mounting portion 202 of the semiconductor laser 200. While this configuration is simple structure, the laser beam 204 can be prevented that the vignetting by mounts 201.

Although the optical system mounting portion 202 is constructed by providing a step on the mount 201 may be a simple planar structure. When using the case and the light guide collimator lens 203 is small, the mounting portion 202 may be planar. Structure optical system mounting portion 202 is a flat surface is easy to manufacture.

Hereinafter, it is summarized the technical features described herein.
[Characteristics of the external cavity type semiconductor laser (Fig. 1)
[Technical features 1]
In the external cavity type semiconductor laser having a semiconductor laser chip and the external optical system,
The semiconductor laser chip is a broad area type semiconductor laser, the substrate surface in the direction of the broad area semiconductor laser, there are optical confinement transverse mode becomes multimode optical waveguide function, horizontal in the direction perpendicular to the substrate mode there is optical confinement function becomes single mode, the first facet is high reflection coated been subjected to the second end surface of the non-reflective coating is applied,
The second end face and the external optical system is optically coupled,
External cavity type semiconductor laser, wherein a spatial filter for limiting the optical path of the substrate in-plane direction of the semiconductor laser chip in the external optical system is provided.
[Technical features 2]
In the external cavity semiconductor laser technical features 1,
The lens is provided in the external optical system, this lens from the broad area type semiconductor laser, changing the vertical direction of the light is parallel light with respect to the substrate, the light in the horizontal direction relative to the substrate external cavity type semiconductor laser, characterized by condensing the opening of the spatial filter.
[Characteristics of vertical cavity surface emitting laser (Fig. 2)]
[Technical features 3]
In vertical cavity surface emitting laser formed on a semiconductor substrate,
The semiconductor multilayer Bragg grating is provided on a substrate,
Junction structure of the semiconductor laser is formed on the semiconductor multilayer Bragg diffraction on gratings,
Contact layer and the electrode is formed on the junction structure of the semiconductor laser,
Vertical cavity surface emitting laser, wherein a non-reflection coating is applied to the light emitting portion between electrodes.
[Technical features 4]
In vertical cavity surface emitting laser of technical features 3, a vertical cavity surface emitting laser, wherein a transverse mode has a light confining function becomes multimode in the substrate in-plane direction.
[Characteristics of the external cavity type semiconductor laser (Fig. 2)]
[Technical features 5]
In the external cavity type semiconductor laser having a semiconductor laser chip and the external optical system,
The semiconductor laser chip is a vertical cavity surface emitting laser of technical features 3,
Vertical cavity surface plane and an external optical system for non-reflection coating is performed of the light emitting laser optically coupled,
External cavity type semiconductor laser, wherein a spatial filter for limiting the optical path in the external optical system is provided.
[Characteristics of the thin film solid state laser (3)]
[Technical features 6]
In the thin film solid-state laser having a thin film solid state laser chip and the resonator optics,
Thin solid state laser chip has a light confining function transverse mode becomes multimode in its plane direction,
Thin solid-state laser chip is mounted on a heat sink, the high reflectance reflector disposed on the heat sink side of the thin film solid state laser chip, the resonator optical system opposite to the surface to the heat sink of the thin film solid state laser chip optically coupled and,
Thin solid-state laser, wherein a spatial filter for limiting the optical path in the resonator optical system is provided.
[Technical features 7]
The thin film solid state laser technical features 6,
Thin solid-state laser, wherein the thin film solid state laser chip is lateral excitation.
[Characteristics of the external cavity type semiconductor laser (Fig. 4)
[Technical features 8]
In the external cavity type semiconductor laser having a semiconductor laser chip and the external optical system,
The semiconductor laser chip is a broad area type semiconductor laser, there are an optical confinement function as an optical waveguide of the broad area semiconductor laser multi-mode in the substrate plane direction of the single lateral mode in the direction perpendicular to the substrate There are optical confinement function becomes, the first facet is high reflection coated been subjected to the second end surface of the non-reflective coating is applied,
The second end face and the external optical system is optically coupled,
External cavity type semiconductor laser, wherein a fiber having a fiber Bragg grating in the external optical system is provided.
[Characteristics of the external cavity type semiconductor laser (Fig. 5)
[Technical features 9]
In the external cavity type semiconductor laser having a semiconductor laser chip and the external optical system,
The semiconductor laser chip is a vertical cavity surface emitting laser of technical features 3,
Vertical cavity surface plane and an external optical system for non-reflection coating is performed of the light emitting laser optically coupled,
External cavity semiconductor lasers, characterized in that it comprises an optical fiber having a fiber Bragg grating in an external optical system.
[Characteristics of the thin film solid state laser (Fig. 6)]
[Technical features 10]
In the thin film solid-state laser having a thin film solid state laser chip and the resonator optics,
Thin solid state laser chip has a light confining function transverse mode becomes multimode in its plane direction,
Thin solid-state laser chip is mounted on a heat sink, the high reflectance reflector disposed on the heat sink side of the thin film solid state laser chip, the resonator optical system opposite to the surface to the heat sink of the thin film solid state laser chip optically coupled and,
Thin solid-state laser which is characterized in that it comprises an optical fiber having a fiber Bragg grating in an external optical system.
[Characteristics of the solid-state laser (Fig. 7)]
[Technical feature 11]
Reflectors, solid-state laser medium, the lens, and, in the solid-state laser provided with an optical fiber having a fiber Bragg grating,
In the solid-state laser medium is perpendicular directions in the plane and the laser oscillation light has an optical confinement function transverse mode becomes multimode,
Solid-state laser medium and the solid-state laser, characterized in that to constitute a resonator optical fiber having a fiber Bragg grating with optically coupled to the reflector and the fiber Bragg grating by a lens.
[Characteristics of the external cavity type semiconductor laser (Fig. 8)]
[Technical feature 12]
In the external cavity type semiconductor laser having a semiconductor laser chip and the external optical system,
The semiconductor laser chip is a semiconductor laser array having a plurality of active regions, each active region substrate in-plane direction constituting the semiconductor laser array, there is a light confinement function becomes multimode optical waveguide, the substrate There are optical confinement function transverse mode is single in the vertical direction for,
Between the plurality of active regions are regions causing loss to the laser light that oscillates is provided,
This is the first facet of the semiconductor laser chip is a high reflectance coating is applied, the second end surface of the non-reflective coating is applied,
The second end face and the external optical system is optically coupled,
External cavity type semiconductor laser, wherein a spatial filter for limiting the optical path of the substrate in-plane direction of the semiconductor laser chip in the external optical system is provided.
[Technical feature 13]
In the external cavity type semiconductor laser having a semiconductor laser chip and the external optical system,
The semiconductor laser chip is a semiconductor laser array having a plurality of active regions, each active region substrate in-plane direction constituting the semiconductor laser array, there is a light confinement function becomes multimode optical waveguide, the substrate There are optical confinement function transverse mode is single in the vertical direction for,
Between the plurality of active regions is non-excitation region is provided to absorb light,
This is the first facet of the semiconductor laser chip is a high reflectance coating is applied, the second end surface of the non-reflective coating is applied,
The second end face and the external optical system is optically coupled,
External cavity semiconductor lasers, characterized in that it comprises an optical fiber having a fiber Bragg grating in an external optical system.
[Characteristics of the external cavity type semiconductor laser (Fig. 9)]
[Technical feature 14]
In the external cavity type semiconductor laser having a semiconductor laser chip and the external optical system,
The semiconductor laser chip is a broad area type semiconductor laser, the substrate surface in the direction of the broad area semiconductor laser, there are optical confinement transverse mode becomes multimode optical waveguide function, in a direction perpendicular to the substrate There are transverse mode optical confinement function becomes single mode, the first facet is high reflection coated been subjected to the second end surface of the non-reflective coating is applied,
The second end face and the external optical system is optically coupled,
External optical system comprises a cylindrical lens and the reflecting mirror,
After the cylindrical lens is obtained by converting the direction of light transverse mode broad area type semiconductor laser becomes single mode to parallel light, an external-cavity semiconductor laser, characterized in that directing the light to the reflector.
[Technical feature 15]
In the external cavity type semiconductor laser having a semiconductor laser chip and the external optical system,
The semiconductor laser chip is a semiconductor laser array having a plurality of active regions, each active region substrate in-plane direction constituting the semiconductor laser array, there is a light confinement function becomes multimode optical waveguide, the substrate in the vertical direction for there is optical confinement transverse mode is single-function, the first facet is high reflection coated been subjected to the second end surface of the non-reflective coating is applied,
The second end face and the external optical system is optically coupled,
External optical system comprises a cylindrical lens and the reflecting mirror,
After the cylindrical lens is obtained by converting the direction of light transverse mode broad area type semiconductor laser becomes single mode to parallel light, an external-cavity semiconductor laser, characterized in that directing the light to partial reflection mirror.
[Characteristics of the external cavity type semiconductor laser (Fig. 10)]
[Technical feature 16]
In the external cavity type semiconductor laser having a semiconductor laser chip and the external optical system,
The semiconductor laser chip is a vertical cavity surface emitting laser of technical features 3,
Vertical cavity surface plane and an external optical system for non-reflection coating is performed of the light emitting laser optically coupled,
External optical system includes a reflecting mirror,
External cavity type semiconductor laser, characterized by forming the cavity by the vertical cavity surface emitting laser and the reflector.
[Characteristics of the external cavity type semiconductor laser (Fig. 11)]
[Technical feature 17]
In the external cavity type semiconductor laser having a semiconductor laser array chip and the external optical system,
External optics external cavity type semiconductor laser, characterized in that it comprises an aperture corresponding to the respective active regions of the semiconductor laser array chip.
[Technical feature 18]
In the external cavity semiconductor laser technical features 17,
The external optical system, an external cavity type semiconductor laser, characterized by further forming a resonator by providing a reflecting mirror for reflecting the specific wavelength.
[Technical feature 19]
Optical fiber amplifier, characterized in that a combination of external-cavity semiconductor laser and the active fiber technical features 18.
[Technical feature 20]
In the external cavity semiconductor laser technical features 14,
The width w of the active region of the broad area semiconductor laser chip, said external high-angle external cavity type semiconductor laser, wherein the ratio L / w of the length L of the resonator is 100 or more, which is formed by the system.
[Characteristics of the external cavity type semiconductor laser (Fig. 12)]
[Technical feature 21]
In the external cavity type semiconductor laser having a plurality of semiconductor laser chip and the external optical system,
The semiconductor laser chip is mounted on a heat sink, the semiconductor laser light emitted from the chip the external cavity type semiconductor laser, wherein the emitted in a direction substantially perpendicular to the cooling surface of the heat sink.
[Technical feature 22]
In the external cavity semiconductor laser technical features 21,
It said semiconductor laser chip is external cavity type semiconductor laser which is a semiconductor laser array chip.
[Technical feature 23]
In the external cavity semiconductor laser technical features 22,
Wherein the external optical system is an external cavity type semiconductor laser, characterized in that it comprises an aperture corresponding to the respective active regions of the semiconductor laser array chip.
[Characteristics of the external cavity type semiconductor laser (Fig. 13)]
[Technical feature 24]
In the external cavity semiconductor laser technical features 21,
Furthermore, the semiconductor laser chip comprises a plurality of reflecting mirrors corresponding to, these reflectors, the external resonator, characterized in that light emitted from said semiconductor laser chip is emitted in a direction substantially perpendicular to the heat sink type semiconductor laser.
[Characteristics of the external cavity type semiconductor laser (Fig. 14)]
[Technical feature 25]
In the external cavity type semiconductor laser having a plurality of semiconductor laser chip and the external optical system,
The semiconductor laser chip is mounted on a heat sink, the semiconductor laser light emitted from the chip the external cavity type semiconductor laser, wherein the emitted in a substantially horizontal direction relative to the cooling surface of the heat sink.
[Characteristics of the external cavity type semiconductor laser (Fig. 15)]
[Technical feature 26]
In the external cavity semiconductor laser technical features 23,
Wherein the external optical system can further external cavity type semiconductor laser, characterized in that it comprises an optical fiber having a fiber Bragg grating.
[Characteristics of the external cavity type semiconductor laser (Fig. 16)]
[Technical feature 27]
In the external cavity semiconductor laser technical features 17,
External cavity type semiconductor laser, characterized by further comprising a pair of cylindrical lens array.
[Characteristics of external cavity semiconductor laser (17, 18)
[Technical feature 28]
Semiconductor laser chip, the conductive mount, the insulator block, and an electrode, bonding the semiconductor laser chip and an insulator block the conductive mount first surface, to adhere the electrode on the insulator block, the upper surface of the electrode and the semiconductor laser chip, and connected through a conductive wire, a semiconductor laser adhered to the lower electrode to the second surface of the conductive mounts,
Conductive mount an optical system mounting portion, the optical system is mounted on the optical system mounting portion, a semiconductor laser, characterized in that the optical system and the semiconductor laser chip is optically coupled.
[Technical feature 29]
In the semiconductor laser of the technical features 28,
The optical system mounting unit semiconductor laser, characterized in that it has a step structure.
[Technical feature 30]
In the semiconductor laser of the technical features 28,
The optical system mounting unit semiconductor laser, characterized in that it has a planar structure.
[Technical feature 31]
In the semiconductor laser of the technical features 28,
A semiconductor laser, wherein the optical system is a collimating lens.
[Technical feature 32]
In the semiconductor laser of the technical features 31,
Wherein is partially reflective layer is provided on the plane portion of the collimator lens, a semiconductor laser, characterized in that functions as an external-cavity semiconductor laser.
[Technical feature 33]
Solid-state laser having a semiconductor laser and a solid-state laser medium of technical features 32.
[Technical feature 34]
In the semiconductor laser of the technical features 28,
A semiconductor laser, wherein the optical system is a light guide.

1 ... broad area semiconductor laser chip, 2 ... active region, 3 ... end face high reflectance coating is applied, 4 ... end surface non-reflective coating is applied, 5 ... lens, 6 ... spatial filter, 7 ... a cylindrical lens, 8 ... partially reflecting mirror, 9 ... slit opening (aperture), 10 ... external cavity semiconductor laser, 11 ... output light, 12 ... slab waveguide, 13 ... core layer, 20 ... external cavity type semiconductor laser, 21 ... external cavity VCSEL (vertical cavity surface emitting laser) chip, 22 ... substrate, 23 ... semiconductor multilayer Bragg grating 24 ... active layer, 25 ... lens, 26 ... spatial filter, 27 ... lens, 28 ... partially reflecting mirror, 29 ... pinhole-like opening, 31 ... output light, 32 ... lower cladding layer, 33 ... upper cladding layer, 34 ... electrode, 35 ... exit light, 36 ... light emitting portion, 3 7 ... optical fiber, 38 ... core, 39 ... anti-reflective coating layer, 40 ... thin film solid state lasers, 41 ... thin film solid state laser chip, 42 ... active region, 43 ... heat sink, 44 ... pumping light, 45 ... pumping light, 46 ... high reflectivity coating layer, 50 ... external cavity semiconductor laser, 51 ... cylindrical lens, 52 ... lens, 53 ... output optical fiber, 54 ... fiber Bragg grating, 55 ... laser light, 60 ... external cavity type semiconductor laser 70 ... thin film solid state lasers, 80 ... solid-state laser, 81 ... solid-state laser rod, 82 ... reflector, 83 ... pumping light, 84 ... pumping light, 91 ... semiconductor laser array chip, 92,92a, 92b, 92c, 92d ... active region, 93, 94 ... end surface, 95 ... parasitic oscillation light, 96 ... non-excitation region, 100 ... external cavity type semiconductor laser, 101 ... partially reflecting mirror 102 ... output light 103 ... concave mirror 110 ... external cavity type semiconductor laser, 111 ... partially reflecting mirror, 112 ... output light 120 ... external cavity type semiconductor laser, 121 ... aperture 122 ... plane reflecting mirror, 123 ... multi-mode optical fiber, 124 ... (collective) laser beam, 124a ... laser light corresponding to the active region 92a, a laser beam corresponding to 124b ... active region 92b, the laser beam corresponding to 124c ... active region 92c, 124d ... laser light corresponding to the active region 92d, 130 ... external cavity type semiconductor laser, 131 ... aperture 132 ... mount, 133 ... heat sink, the cooling surface of 134 ... heat sink 133, 140 ... external cavity type semiconductor laser, 141 ... mount , 142 ... prismatic reflector, 150 ... external cavity semiconductor laser, 1 1,152 ... cylindrical lens 153 ... support portion, 160 ... external cavity type semiconductor laser, 161 ... fiber Bragg grating, 162 ... optical fiber, 170 external cavity semiconductor laser, 171 ... cylindrical lens array, 172 ... space filter, 173 ... cylindrical lens array, 180 ... semiconductor laser, 181 ... conductive mount, 183 ... conductive submount, 184 ... insulator block, 185 ... electrode, 186 and 187 ... screw hole, 188 ... conductive wire, 190 ... collimator lens, 191 ... optical system mounting unit, 192 ... flat portion of the collimator lens 190, 193 ... laser light, 194 ... screw, 196 ... heat sink 200 ... semiconductor laser, 201 ... conductive mount, 202 ... optical system mounting unit, 20 Planar portion of ... collimator lens, 204 ... laser light, 205 ... collimator lens 203.

Claims (15)

  1. In the external cavity type semiconductor laser having a semiconductor laser chip and the external optical system,
    The semiconductor laser chip is a broad area type semiconductor laser, the substrate surface in the direction of the broad area semiconductor laser, there are optical confinement transverse mode becomes multimode optical waveguide function, horizontal in the direction perpendicular to the substrate mode there is optical confinement function becomes single mode, the first facet is high reflection coated been subjected to the second end surface of the non-reflective coating is applied,
    The second end face and the external optical system is optically coupled,
    External cavity type semiconductor laser, wherein a spatial filter for limiting the only light path corresponding to the substrate plane direction of the semiconductor laser chip in the external optical system is provided.
  2. In external cavity type semiconductor laser according to claim 1,
    The spatial filter external cavity type semiconductor laser which is a slit-shaped opening.
  3. In external cavity type semiconductor laser according to claim 1,
    The external optical lens or a concave mirror in the system is provided, the lens or concave mirror from the broad area type semiconductor laser, changing the vertical direction of the light is parallel light with respect to the substrate, horizontal to the substrate direction of light external cavity type semiconductor laser, characterized by condensing the opening of the spatial filter.
  4. In external cavity type semiconductor laser according to claim 1,
    Said external and optical cylindrical lens or a cylindrical mirror in the system is provided, the cylindrical lens or cylindrical mirror is from the spatial filter, external to said changing the parallel light in the horizontal direction of the light with respect to the substrate cavity semiconductor laser.
  5. In external cavity type semiconductor laser according to claim 1,
    It said external a reflecting mirror in the optical system, the reflecting mirror and the semiconductor laser chip first external resonator type semiconductor laser, wherein the end face forms a Fabry-Perot resonator.
  6. In external cavity type semiconductor laser according to claim 1,
    The broad area type semiconductor laser is a semiconductor laser array having a plurality of active regions,
    External cavity type semiconductor laser, wherein the non-excitation region for absorbing light is provided between the plurality of active regions.
  7. In the external cavity type semiconductor laser having a semiconductor laser chip and the external optical system,
    The semiconductor laser chip, the semiconductor multilayer Bragg grating is provided on a substrate, a semiconductor multilayer film on a Bragg grating junction structure of the semiconductor laser are formed, the contact layer and the electrode is formed on a junction structure of a semiconductor laser is, nonreflective coating is applied to the light emitting portion between the electrodes has an optical confinement function transverse mode becomes multimode in the substrate plane direction,
    The external optical system and non-reflective coating is applied the surface of the vertical cavity surface emitting laser optically coupled,
    External cavity type semiconductor laser, wherein a spatial filter for limiting the optical path in the external optical system is provided.
  8. In external cavity type semiconductor laser according to claim 7,
    The spatial filter external cavity type semiconductor laser which is a pinhole-like opening.
  9. In external cavity type semiconductor laser according to claim 7,
    The spatial filter external cavity type semiconductor laser, wherein an optical fiber or an optical waveguide of a single mode.
  10. In external cavity type semiconductor laser according to claim 7,
    Wherein the external optical system, the first lens, second lens, and, external cavity semiconductor laser which is characterized in that it comprises a reflecting mirror.
  11. In external cavity type semiconductor laser according to claim 7,
    Wherein the external optical system, an external cavity type semiconductor laser, characterized by comprising a lens and a concave mirror.
  12. In external cavity type semiconductor laser according to claim 9,
    Furthermore, the external cavity type semiconductor laser characterized by comprising a fiber Bragg grating.
  13. In external cavity type semiconductor laser according to claim 12,
    Wherein the external optical system comprises a lens, an external cavity type semiconductor laser that characterized in that the lens coupling light from said semiconductor laser chip to said optical fiber or optical waveguide.
  14. In the external cavity type semiconductor laser having a semiconductor laser chip and the external optical system,
    The semiconductor laser chip is a broad area type semiconductor laser, there are an optical confinement function as an optical waveguide of the broad area semiconductor laser multi-mode in the substrate plane direction of the single lateral mode in the direction perpendicular to the substrate There are optical confinement function becomes, the first facet is high reflection coated been subjected to the second end surface of the non-reflective coating is applied,
    The second end face and the external optical system is optically coupled,
    External optical system, a cylindrical lens or cylindrical mirror, and an external cavity type semiconductor laser, wherein a fiber having a fiber Bragg grating is provided.
  15. In external cavity type semiconductor laser according to claim 14,
    The broad area type semiconductor laser is a semiconductor laser array having a plurality of active regions,
    External cavity type semiconductor laser, wherein the non-excitation region for absorbing light is provided between the plurality of active regions.
PCT/JP2015/081674 2014-11-20 2015-11-11 External resonator-type semiconductor laser WO2016080252A1 (en)

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