CN116581175A - Epitaxial wafer of 2-3 mu m infrared band avalanche photoelectric detection chip - Google Patents
Epitaxial wafer of 2-3 mu m infrared band avalanche photoelectric detection chip Download PDFInfo
- Publication number
- CN116581175A CN116581175A CN202310825751.6A CN202310825751A CN116581175A CN 116581175 A CN116581175 A CN 116581175A CN 202310825751 A CN202310825751 A CN 202310825751A CN 116581175 A CN116581175 A CN 116581175A
- Authority
- CN
- China
- Prior art keywords
- layer
- epitaxial wafer
- infrared band
- thickness
- strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000007704 transition Effects 0.000 claims abstract description 11
- 238000010521 absorption reaction Methods 0.000 claims abstract description 6
- 230000002745 absorbent Effects 0.000 claims abstract description 5
- 239000002250 absorbent Substances 0.000 claims abstract description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a 2-3 mu m infrared band avalanche photoelectric detection chip epitaxial wafer, which relates to the technical field of semiconductor optoelectronic devices and comprises a substrate, wherein the substrate is an InP substrate layer; above the InP substrate layer isA variant buffer layer;above the graded buffer layer is strainAn absorption layer; strain ofAbove the absorbent layer isA transition layer;above the transition layer isA charge layer;above the charge layer isAnd (5) a cover layer. The invention mainly aims at the detection of the infrared band of 2-3 mu m, and adjusts on the basis of the traditional infrared avalanche detector, so that the wavelength response band range of the traditional infrared avalanche detector is expanded to 2-3 mu m, and the invention can develop the high-sensitivity infrared detection field due to the internal gain.
Description
Technical Field
The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a 2-3 mu m infrared band avalanche photoelectric detection chip epitaxial wafer.
Background
The infrared communication and detection of 2-3 mu m have important application value, such as the energy loss of the wave band of 2-3 mu m is lower corresponding to the fluoride optical fiber communication field, so the transmission distance is longer, and the method has important significance for the detection of the wave band. In addition, the application of the wave bands of 2-3 μm in the fields of satellite remote sensing and environmental monitoring is also important, and more information can be fed back. The conventional infrared PIN detector has no internal gain, and no gain for light of the band, so the detection sensitivity is limited. Based on the epitaxial wafer, the invention provides an infrared band avalanche photoelectric detection chip epitaxial wafer with the wavelength of 2-3 mu m, and a chip based on the epitaxial wafer can have internal gain and can improve the sensitivity to the band detection.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a 2-3 mu m infrared band avalanche photoelectric detection chip epitaxial wafer.
In order to achieve the above purpose, the present invention provides the following technical solutions: an epitaxial wafer of a 2-3 mu m infrared band avalanche photoelectric detection chip comprises a substrate and is characterized in that:
the substrate is an InP substrate layer;
above the InP substrate layer isA variant buffer layer;
above the graded buffer layer is strain->An absorption layer;
strain ofOn top of the absorbent layer is->A transition layer;
above the transition layer is->A charge layer;
above the charge layer is +.>And (5) a cover layer.
Further, the InP substrate layer is semi-insulating or N-type, the semi-insulating is doped iron substrate, and the N doping concentration is greater than 1x The thickness is 100-400 μm.
Further, the saidA variant buffer layer with a doping concentration of 1 x%>～1x/> The value of As content y is linearly changed from bottom to top from 0 to 0.83 when the thickness is more than 5 mu m.
Further, the strainAn absorption layer with a doping concentration of less than 1 x%> The thickness is 2-4 mu m, the strain is more than 9000ppm, and the in content x value is 0.67-0.92.
Further, the saidThe transition layer has a gradual change of wavelength from bottom to top and a doping concentration of less than 1x +.> The thickness is 0.03-0.09 mu m.
Further, the saidA charge layer with a doping concentration of greater than 1x +> The thickness is 0.1-0.5 μm.
Further, the saidA cap layer with a doping concentration of less than 1 x%> The thickness is 2-5 μm.
Compared with the prior art, the invention has the following beneficial effects:
the invention mainly aims at the detection of the infrared band of 2-3 mu m, and adjusts on the basis of the traditional infrared avalanche detector, so that the wavelength response band range of the traditional infrared avalanche detector is expanded to 2-3 mu m, and the invention can develop the high-sensitivity infrared detection field due to the internal gain.
Drawings
FIG. 1 is a schematic diagram of an epitaxial wafer structure of a 2-3 μm infrared band avalanche photodetector chip;
FIG. 2 shows an infrared band avalanche photodetector chip epitaxial wafer with a wavelength of 2-3 μmThe structure of the variable buffer layer is schematically shown.
Detailed Description
Referring to fig. 1 to 2, a schematic diagram of an epitaxial wafer structure of a 2-3 μm infrared band avalanche photodetector chip is shown. The specific parameters are shown in Table one.
The epitaxial wafer of the 2-3 mu m infrared band avalanche photoelectric detection chip comprises a substrate;
the substrate is an InP substrate layer 10;
above the InP substrate layer 10 isA variable buffer layer 20;
the strain is +.>An absorbent layer 30;
strain ofAbove the absorbent layer 30 is->A transition layer 40;
above the InGaAsP transition layer 40 isA charge layer 50;
above the charge layer 50 is->And a cover layer 60.
In Table I, the InP substrate layer 10 is semi-insulating or N-type, the semi-insulating is a doped iron substrate, and the N doping concentration is greater than 1x The thickness is 100-400 μm.
In Table I, theThe doping concentration of the graded buffer layer 20 is 1 x->～1x/> The value of As content y is linearly changed from bottom to top from 0 to 0.83 when the thickness is more than 5 mu m.
In Table one, the strainAn absorption layer 30 with a doping concentration of less than 1 x%> The thickness is 2-4 mu m, the strain is more than 9000ppm, and the in content x value is 0.67 to the upper part0.92。
In Table I, theA transition layer 40 with a wavelength gradually changed from bottom to top and a doping concentration less than 11x +.> The thickness is 0.03-0.09 mu m.
In Table I, theA charge layer 50 with a doping concentration of greater than 1x +> The thickness is 0.1-0.5 μm.
In Table I, theCap layer 60 with a doping concentration of less than 1 x-> The thickness is 2-5 μm.
Table 1: epitaxial wafer structure indication of 2-3 mu m infrared band avalanche photoelectric detection chip
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to those skilled in the art without departing from the principles of the present invention are intended to be considered as protecting the scope of the present template.
Claims (7)
1. An epitaxial wafer of a 2-3 mu m infrared band avalanche photoelectric detection chip comprises a substrate and is characterized in that:
the substrate is an InP substrate layer (10);
above the InP substrate layer (10) isA graded buffer layer (20);
the strain is formed on the graded buffer layer (20)>An absorbent layer (30);
strain ofAbove the absorption layer (30) is +.>A transition layer (40);
above the transition layer (40) is +.>A charge layer (50);
above the charge layer (50) is +.>A cover layer (60).
2. The epitaxial wafer of the 2-3 μm infrared band avalanche photoelectric detection chip of claim 1, wherein the InP substrate layer (10) is semi-insulating or N-type, the semi-insulating is doped iron substrate, and the N doping concentration is greater than 1x The thickness is 100-400 μm.
3. The 2-3 μm infrared band avalanche photodetector chip epitaxial wafer of claim 1, wherein said wafer is characterized in thatA graded buffer layer (20) with a doping concentration of 1 x->～1x/> The value of As content y is linearly changed from bottom to top from 0 to 0.83 when the thickness is more than 5 mu m.
4. The 2-3 μm infrared band avalanche photodetector chip epitaxial wafer of claim 1, wherein said strain is as followsAn absorption layer (30) with a doping concentration of less than 1x #)> Thickness of 2-4 mu m, strain of more than 9000ppm, and the value x of in content is 0.67-0.92.
5. The 2-3 μm infrared band avalanche photodetector chip epitaxial wafer of claim 1, wherein said wafer is characterized in thatA transition layer (40) with a wavelength gradually changed from bottom to top and a doping concentration less than 1x +.> The thickness is 0.03-0.09 mu m.
6. The 2-3 μm infrared band avalanche photodetector chip epitaxial wafer of claim 1, wherein said wafer is characterized in thatA charge layer (50) with a doping concentration of more than 1x +> The thickness is 0.1-0.5 μm.
7. The 2-3 μm infrared band avalanche photodetector chip epitaxial wafer of claim 1, wherein said wafer is characterized in thatA cap layer (60) with a doping concentration of less than 1x> Thickness is 2-5 mum。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310825751.6A CN116581175A (en) | 2023-07-07 | 2023-07-07 | Epitaxial wafer of 2-3 mu m infrared band avalanche photoelectric detection chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310825751.6A CN116581175A (en) | 2023-07-07 | 2023-07-07 | Epitaxial wafer of 2-3 mu m infrared band avalanche photoelectric detection chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116581175A true CN116581175A (en) | 2023-08-11 |
Family
ID=87538127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310825751.6A Pending CN116581175A (en) | 2023-07-07 | 2023-07-07 | Epitaxial wafer of 2-3 mu m infrared band avalanche photoelectric detection chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116581175A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576786A (en) * | 2014-08-12 | 2015-04-29 | 深圳市芯思杰联邦国际科技发展有限公司 | Novel zero-volt-response avalanche photodetector chip and manufacturing method thereof |
| CN105185846A (en) * | 2015-08-26 | 2015-12-23 | 中国科学院长春光学精密机械与物理研究所 | PBN-type InGaAs infrared detector |
| CN106356427A (en) * | 2016-11-08 | 2017-01-25 | 中国电子科技集团公司第四十四研究所 | Growth method for buffering layer of expanding wavelength near-infrared detector |
| CN116053336A (en) * | 2022-12-27 | 2023-05-02 | 西南技术物理研究所 | Preparation method of light trapping structure on surface of InGaAs avalanche detector |
-
2023
- 2023-07-07 CN CN202310825751.6A patent/CN116581175A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576786A (en) * | 2014-08-12 | 2015-04-29 | 深圳市芯思杰联邦国际科技发展有限公司 | Novel zero-volt-response avalanche photodetector chip and manufacturing method thereof |
| CN105185846A (en) * | 2015-08-26 | 2015-12-23 | 中国科学院长春光学精密机械与物理研究所 | PBN-type InGaAs infrared detector |
| CN106356427A (en) * | 2016-11-08 | 2017-01-25 | 中国电子科技集团公司第四十四研究所 | Growth method for buffering layer of expanding wavelength near-infrared detector |
| CN116053336A (en) * | 2022-12-27 | 2023-05-02 | 西南技术物理研究所 | Preparation method of light trapping structure on surface of InGaAs avalanche detector |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105789347B (en) | Heterogeneous type phototransistor based on GeSn GeSi materials and preparation method thereof | |
| CN102290481B (en) | Silicon detector structure with wide spectral response range and production method thereof | |
| CN106531822B (en) | A kind of photodetector | |
| CN104576786B (en) | Novel zero volt response avalanche photodetector chip and preparation method thereof | |
| US20080179701A1 (en) | Ambient light sensor | |
| CN106356419B (en) | A kind of photodetector of the structure containing oxygen buried layer | |
| CN105742397A (en) | Broadband photodiode for detection from visible light to infrared light | |
| CN210136887U (en) | Waveguide type photoelectric detector | |
| CN115458623B (en) | Photoelectric detector chip, distance sensor and electronic equipment | |
| CN111276555A (en) | Structure optimization method based on InGaAs/InAlAs/InP avalanche photodetector | |
| CN115579410A (en) | Infrared extended wavelength light detector chip epitaxial wafer | |
| CN204067379U (en) | Novel zero volt response avalanche photodetector chip | |
| CN104538484A (en) | Epitaxial structure of wavelength expansion type InGaAs avalanche photodiode | |
| CN116581175A (en) | Epitaxial wafer of 2-3 mu m infrared band avalanche photoelectric detection chip | |
| CN115458624B (en) | Photoelectric detector chip, distance sensor and electronic equipment | |
| CN103383977A (en) | InGaAs (Indium Gallium Arsenide) or GaAs (Gallium Arsenide) infrared detector with wide detection bands | |
| CN109686805B (en) | Silicon-based high-speed high-response PIN photoelectric detector and manufacturing method thereof | |
| CN211700284U (en) | Infrared detector integrated with photovoltaic cell structure | |
| CN105161550A (en) | Photoelectric detector assembly | |
| Chen et al. | Mechanism of dark current dependence on reverse voltage in mid-wavelength infrared HgCdTe mesa PIN avalanche diode | |
| CN111223880B (en) | Infrared detector integrated with photovoltaic cell structure and preparation method thereof | |
| Li et al. | Performance of low dark current InGaAs shortwave infrared detector | |
| CN105004419B (en) | It is applied to the photoelectric sensing integrated chip of smart home | |
| CN110783418B (en) | Photoelectric sensor and preparation method thereof | |
| CN110896120A (en) | Multilayer InGaAs detector material structure and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20230811 |