CN113284963B - Interdigital guided mode photoelectric detector - Google Patents

Interdigital guided mode photoelectric detector Download PDF

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CN113284963B
CN113284963B CN202110438832.1A CN202110438832A CN113284963B CN 113284963 B CN113284963 B CN 113284963B CN 202110438832 A CN202110438832 A CN 202110438832A CN 113284963 B CN113284963 B CN 113284963B
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core layer
ohmic contact
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type ohmic
incident light
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CN113284963A (en
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胡成日
陈年域
王博
刘巧莉
胡安琪
郭霞
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Beijing University of Posts and Telecommunications
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract

The embodiment of the application provides an interdigital guided mode photoelectric detector. The detector comprises an optical waveguide structure, a first optical waveguide and a second optical waveguide, wherein the optical waveguide structure comprises a core layer and a cladding layer wrapping the core layer, the core layer extends for a preset distance along a first direction, and a first end of the core layer is used for receiving target incident light; the P-type ohmic contact regions and the N-type ohmic contact regions are doped parts on the top of the core layer, extend along a second direction perpendicular to the first direction and are alternately arranged along the first direction; and P-type and N-type electrodes extending in a first direction; the P-type electrode is provided with a plurality of parallel first branches, and each first branch is attached to one P-type ohmic contact region; the N-type electrode is provided with a plurality of parallel second branches, and each second branch is attached to one N-type ohmic contact region. The scheme can solve the problem that the existing photoelectric detector has low detection efficiency on target incident light with the wavelength close to the forbidden band width of the semiconductor material of the photoelectric detector.

Description

Interdigital guided mode photoelectric detector
Technical Field
The application relates to the technical field of semiconductor optoelectronic devices, in particular to an interdigital guided mode photoelectric detector.
Background
A photodetector is a device that converts an optical signal into an electrical signal for characterization. Fig. 1 is a typical silicon PIN photodetector, which operates as follows:
the target incident light is absorbed at the semiconductor material absorption region 100 and photogenerated carriers (electrons and holes) are generated; the holes move to the P-type detection electrode 103 through the P-type contact region 101 under the action of the electric field and are collected by the P-type detection electrode 103; the electrons move toward the N-type detecting electrode 104 through the N-type contact region 102 under the action of the electric field, and are collected by the N-type detecting electrode 104. And finally, detecting photocurrent in a circuit outside the detector to finish the detection of the target incident light. Wherein the semiconductor material absorption region 100 has a length L.
The responsivity R is a parameter describing the photoelectric conversion capability of the photodetector. The responsivity R of the photoelectric detector is positively correlated with the efficiency eta of a semiconductor material for absorbing electromagnetic waves and the collection rate of photo-generated carriers by the detection electrode, wherein the efficiency eta of the semiconductor material for absorbing light is 1-e-α(λ)LAnd alpha (lambda) is the intrinsic absorption coefficient of the semiconductor material, and L is the length of the absorption region of the semiconductor material.
While the intrinsic absorption coefficient alpha (lambda) of the same semiconductor material for different wavelengths of the target incident light is different. For target incident light with a wavelength close to the forbidden bandwidth of the semiconductor material, the intrinsic absorption coefficient α (λ) of the semiconductor material is generally low, which results in low responsivity R of the photodetector, and the target incident light of the band cannot be effectively detected. On the premise of not introducing other high-absorptivity materials, the responsivity of the photoelectric detector to the target light in the waveband needs to be improved, and the photo-generated carriers are ensured to be fully collected by the detection electrode while the light absorption efficiency is improved.
For the photodetector shown in fig. 1, increasing the length L of the semiconductor material absorption region 100 increases the distance between the photogenerated carriers and the electrodes (P-type detection electrode 103 and N-type detection electrode 104), so that the transit time of the carriers increases, the recombination probability of the carriers in the movement process increases, and the carriers cannot be effectively collected by the electrodes (P-type detection electrode 103 and N-type detection electrode 104), and therefore, the responsivity of the photodetector cannot be improved simply by increasing the length L of the semiconductor material absorption region 100.
Disclosure of Invention
An object of the embodiments of the present application is to provide an interdigital guided-mode photodetector, so as to solve the problem that the detection efficiency of the conventional photodetector for target incident light with a wavelength close to the forbidden bandwidth of the semiconductor material of the photodetector is low. The specific technical scheme is as follows:
the embodiment of the present application provides an interdigital guided mode photodetector, including:
the optical waveguide structure comprises a core layer and a cladding layer wrapping the core layer, wherein the core layer extends along a first direction, and a first end of the core layer is used for receiving target incident light; the target incident light enters the optical waveguide structure and then propagates along the first direction in the form of guided-mode light;
the P-type ohmic contact regions and the N-type ohmic contact regions are doped parts on the top of the core layer, extend along a second direction perpendicular to the first direction and are alternately arranged along the first direction; and the number of the first and second groups,
a P-type electrode and an N-type electrode extending in the first direction; the P-type electrode is provided with a plurality of parallel first branches, and each first branch is attached to one P-type ohmic contact region and used for collecting a cavity generated by interaction of the target incident light and the core layer; the N-type electrode is provided with a plurality of parallel second branches, and each second branch is attached to one N-type ohmic contact region and used for collecting electrons generated by interaction of the target incident light and the core layer.
According to the scheme provided by the embodiment of the application, the optical waveguide structure is arranged, the core layer with the preset distance is extended along the first direction, the target incident light can be stably transmitted along the first direction, the target incident light is continuously absorbed by the core layer in the transmission process, and the absorption efficiency of the core layer is effectively improved. And a plurality of P-type ohmic contact regions and N-type ohmic contact regions are generated on the top of the core layer in a doping manner (the P-type ohmic contact regions and the N-type ohmic contact regions are alternately arranged along a first direction and extend along a second direction perpendicular to the first direction), and a P-type electrode with a plurality of first branches and an N-type electrode with a plurality of second branches are arranged to be in contact with the P-type ohmic contact regions and the N-type ohmic contact regions, so that photogenerated carriers (electrons and holes) generated by continuous interaction between target incident light and the core layer can respectively move towards the first branch of the nearest P-type ohmic contact region and the second branch of the N-type ohmic contact region under the action of an electric field, and are fully collected by the P-type electrode and the N-type electrode, and the collection efficiency of the photogenerated carriers by the electrode is effectively improved. Through the comprehensive effects of the two aspects, for target incident light with the wavelength close to the forbidden bandwidth of the core layer, even if the intrinsic absorption coefficient alpha (lambda) of the core layer of the photoelectric detector is low, the absorption efficiency of the photoelectric detector for the target incident light is effectively improved by increasing the length of the core layer, and photo-generated carriers are fully collected by the electrode, so that the detection efficiency of the target incident light with the wavelength close to the forbidden bandwidth of a semiconductor material (the core layer) of the photoelectric detector can be improved, and the target incident light with the wavelength close to the forbidden bandwidth of the semiconductor material (the core layer) of the photoelectric detector can be effectively detected.
In some embodiments of the present application, the core layer has a rectangular or embossed cross-sectional shape.
In some embodiments of the present application, the core layer has a length dimension L in the first direction0，
Figure GDA0003303563120000031
α (λ) is the intrinsic absorption coefficient of the core layer, λ is the wavelength of the incident light of interest.
In some embodiments of the present application, a width dimension W of the core layer in a direction perpendicular to the first direction0≤30μm。
In some embodiments of the present application, the length dimension l of the P-type and N-type ohmic contact regions along the first direction0Not greater than 10 microns.
In some embodiments of the present application, the P-type electrode and the N-type electrode apply a reverse bias voltage.
In some embodiments of the present application, the optical waveguide structure is a strip or a ring.
In some embodiments of the present application, the adjacent P-type ohmic contact regions are spaced apart from the N-type ohmic contact regions;
and the distance I between the P-type ohmic contact region and the N-type ohmic contact region is not more than 10 microns.
In some embodiments of the present application, the optical waveguide structure further comprises a coupling structure and/or an anti-reflection structure disposed at the first end of the core layer.
In some embodiments of the present application, the optical waveguide structure is a strip;
the optical waveguide structure further includes a reflective structure disposed at a second end of the core layer, wherein the second end is an exit end relative to the first end.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other embodiments can be obtained by using the drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art silicon PIN photodetector;
fig. 2 is a schematic structural diagram of a first interdigital guided-mode photodetector provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of a second interdigital guided-mode photodetector provided in an embodiment of the present application;
fig. 4 is a schematic structural diagram of a third interdigital guided-mode photodetector provided in an embodiment of the present application. The reference numerals in the drawings are explained as follows:
100-semiconductor material absorption region;
101-P type contact region; 102-N type contact region;
103-P type detecting electrode; 104-an N-type detection electrode;
201 — a power supply;
220-a core layer;
221-P type ohmic contact region; 222-N type ohmic contact region;
223-P-type electrode, 2231-first branch;
224-N type electrode, 2241-second branch;
225-cladding;
300-target incident light.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments that can be derived by one of ordinary skill in the art from the description herein are intended to be within the scope of the present disclosure.
In order to effectively detect target incident light with a wavelength close to the forbidden band width of a semiconductor material of a photoelectric detector, the embodiment of the application provides an interdigital guided-mode photoelectric detector.
The interdigital guided-mode photodetector provided by the present application is described in detail below with reference to the accompanying drawings.
As shown in fig. 2 to 4, an embodiment of the present application provides an interdigital guided-mode photodetector, including:
an optical waveguide structure including a core layer 220 and a cladding layer 225 wrapping the core layer 220, the core layer 220 extending in a first direction, a first end of the core layer 220 for receiving a target incident light 300; the target incident light 300 enters the optical waveguide structure and then propagates in the first direction in the form of guided-mode light;
a plurality of P-type ohmic contact regions 221 and a plurality of N-type ohmic contact regions 222, which are doped portions on the top of the core layer 220, each extending in a second direction perpendicular to the first direction and alternately arranged in the first direction; and the number of the first and second groups,
a P-type electrode 223 and an N-type electrode 224 extending in a first direction; the P-type electrode 223 is provided with a plurality of first branches 2231 which are arranged in parallel, each first branch 2231 is attached to one P-type ohmic contact region 221 and used for collecting holes generated by the interaction between the target incident light 300 and the core layer 220; the N-type electrode 224 has a plurality of second branches 2241 arranged in parallel, and each second branch 2241 is attached to one N-type ohmic contact region 222 for collecting electrons generated by the interaction between the target incident light 300 and the core layer 220.
In the embodiment of the present application, since the interdigital structure of the plurality of first branches 2231 and the plurality of second branches 2241 alternately arranged along the first direction is adopted, the direction of the electric field acting on the photogenerated carriers (electrons and holes) is not perpendicular to the transmission direction (the first direction) of the target incident light 300, but is parallel to or has a small included angle close to parallel to the transmission direction of the target incident light 300.
In the embodiment of the present application, the core layer 220 may be made of semiconductor materials such as silicon, germanium, gallium arsenide, indium phosphide, indium gallium arsenide, and the like. The clad layer 225 may be made of the same material as the core layer 220, or may be made of a dielectric material such as silica or titania. In addition, the cladding 225 material should have a lower refractive index than the core 220 material. It should be noted that, in general, the cladding structure should peripherally cover the entire structure of the interdigital guided-mode photodetector and expose the P-type and N-type electrode portions. In addition, since air can be regarded as a low refractive index material, air can also be used as a cladding, which does not affect the specific implementation of the photodetector.
The embodiment of the application relies on the characteristics of the waveguide, not only effectively improves the absorption efficiency of the absorption region of the photoelectric detector, namely the core layer 220, to the target incident light, but also has natural wavelength selectivity, can realize the filtering of stray light by reasonably designing the waveguide structure (convex character shape, strip shape and the like) and the size, replaces the filtering mode of optical elements such as an external filter and the like of the traditional detector, and has the industrial advantages of low cost and easy integration.
The P-type ohmic contact region 221 and the N-type ohmic contact region 222 are implemented by doping processes such as ion implantation, diffusion, etc. The P-type ohmic contact region 221 and the N-type ohmic contact region 222 are typically highly doped to achieve a non-rectifying ohmic contact with the P-type electrode 223 and the second N-type electrode 224. The first branch 2231 and the second branch 2241 of the P-type electrode 223 and the N-type electrode 224 are respectively located on the alternately arranged P-type ohmic contact regions 221 and the N-type ohmic contact regions 222, and are in direct contact with the ohmic contact regions. The electrodes can be made of evaporated and sputtered metal, transparent conductive materials, graphene and other conductive materials.
According to the scheme provided by the embodiment of the application, when external target incident light irradiates one end of the core layer 220 of the optical waveguide structure, the optical waveguide structure can couple the target incident light 300 into the core layer 220 and transmit the target incident light forward along the first direction in the form of guided-mode light. As the target incident light 300 travels in the core layer 220, it constantly interacts with the core layer 220 and generates photogenerated carriers (electrons and holes). The top of the core layer 220 is provided with a plurality of P-type ohmic contact regions 221 and N-type ohmic contact regions 222 which are alternately arranged along a first direction, the P-type electrode 223 and the N-type electrode 224 which extend along the first direction are respectively provided with a plurality of first branches 2231 and second branches 2241 which are arranged in parallel, each first branch 2231 is attached to one P-type ohmic contact region 221, and each second branch 2241 is attached to one N-type ohmic contact region 222. Under the action of an electric field, holes of carriers (electrons and holes) generated by the interaction of the target incident light 300 and the core layer 220 move to the nearest first branch 2231 of the P-type ohmic contact region 221 and are collected by the P-type electrode 223, electrons move to the nearest second branch 2241 of the N-type ohmic contact region 222 and are collected by the N-type electrode 224, and finally, photocurrent is formed in an external circuit, so that the detection of the target incident light is realized.
By arranging the optical waveguide structure, the core layer 220 extending the preset distance along the first direction can stably transmit the target incident light 300 along the first direction for the target incident light 300 is continuously absorbed by the core layer 220 in the transmission process, and the absorption efficiency of the core layer 220 is effectively improved. And a plurality of P-type ohmic contact regions 221 and N-type ohmic contact regions 222 are formed on the top of the core layer 220 by doping (the P-type ohmic contact regions 221 and the N-type ohmic contact regions 222 are alternately arranged in a first direction and extend in a second direction perpendicular to the first direction), and a P-type electrode 223 having a plurality of first branches 2231 and an N-type electrode 224 having a plurality of second branches 2241 in contact with the P-type ohmic contact region 221 and the N-type ohmic contact region 222, thus, the photogenerated carriers (electrons and holes) generated by the interaction between the target incident light and the core layer 220 can move to the first branch 2231 of the nearest P-type ohmic contact region 221 and the second branch 2241 of the N-type ohmic contact region 222 respectively under the action of the electric field, therefore, the photo-generated carriers are fully collected by the P-type electrode 223 and the N-type electrode 224, and the collection efficiency of the photo-generated carriers by the electrodes is effectively improved. Through the comprehensive effects of the two aspects, for the target incident light 300 with the wavelength close to the forbidden band width of the core layer 220, even if the intrinsic absorption coefficient α (λ) of the core layer 220 is low, the absorption efficiency of the core layer 220 to the target incident light 300 is effectively improved by increasing the length of the core layer 220, and the photo-generated carriers are fully collected by the electrodes, so that the detection efficiency of the target incident light with the wavelength close to the forbidden band width of the semiconductor material (the core layer 220) of the photoelectric detector can be improved, and the target incident light 300 in the wavelength band can be effectively detected.
It can be understood that the guided-mode photodetector provided in the embodiments of the present application can not only efficiently detect the wavelength band that can be detected by the conventional detector, but also, on the basis, can implement high-efficiency detection at the wavelength band where the conventional detector has low detection efficiency (i.e., for target incident light having a wavelength close to the forbidden bandwidth of the semiconductor material of the photodetector).
In order to better understand the technical scheme of the guided mode photodetector provided by the present application, the following briefly introduces the preparation method of the guided mode photodetector. The preparation method comprises the following steps:
s1, selecting a semiconductor material to be used as a substrate, and cleaning the surface of the substrate;
and S2, forming a base material substrate-oxidation layer-top base material layer structure on the base sheet in the step S1 from bottom to top by an epitaxial growth method, an oxygen injection isolation method or a base sheet bonding method. Wherein the refractive index of the oxide layer is lower than that of the substrate, and the thickness of the top substrate is 100-1000 nm.
S3, etching the waveguide structure of the core layer 220 on the top substrate by photolithography and etching processes.
S4, a thin silicon dioxide layer is deposited on the top substrate surface using a PECVD process.
And S5, photoetching the P-type ohmic contact region 221 pattern on the surface of the silicon dioxide layer through a positive photoresist process, and carrying out doping processes such as ion implantation, diffusion and the like on the P-type ohmic contact region.
S6, cleaning and spin-coating the positive photoresist again, performing a photoresist process to form the pattern of the N-type ohmic contact region 222, and performing doping processes such as ion implantation and diffusion.
And S7, cleaning and spin-coating a positive photoresist again, photoetching the patterns of the P-type ohmic contact region 221 and the N-type ohmic contact region 222 through a positive photoresist process, and etching the silicon dioxide layer at the positions of the patterns to obtain the ohmic electrode contact hole.
S8, generating a layer of alloy consisting of one or more metals of gold, silver, titanium or aluminum by adopting a magnetron sputtering or electron beam evaporation method, wherein the thickness is more than 100nm, and then stripping off the redundant metal and photoresist to obtain the P-type electrode 223 and the N-type electrode 224 respectively.
And S9, packaging the P-type electrode 223 and the N-type electrode 224 onto the cathode pin and the anode pin of the PCB tube seat by using technologies such as pressure welding, packaging and the like, thus obtaining the guided mode photoelectric detector in the above embodiment.
In some embodiments of the present application, the cross-sectional shape of the core layer 220 is rectangular or embossed, as shown in fig. 2 and 3.
In the embodiment of the present application, the cross section of the core layer 220 may be designed in different shapes. As shown in fig. 2, the cross-sectional shape of the core layer 220 is rectangular, that is, the optical waveguide structure is designed to be a strip shape, which allows a wider optical band to be transmitted. Therefore, the interdigital guided mode photoelectric detector adopting the core layer can be used as a wide-spectrum detector. As shown in fig. 3, the cross-sectional shape of the core layer 220 is a convex shape, that is, the optical waveguide structure is designed to be a ridge shape, so as to form a narrow-band detector, which has the advantages of high signal-to-noise ratio, low cost and easy integration.
In some embodiments of the present application, the core layer 220 has a length dimension L in the first direction0，
Figure GDA0003303563120000071
Figure GDA0003303563120000072
α (λ) is the intrinsic absorption coefficient of the core layer 220, λ is the wavelength of the target incident light 300.
In the embodiment of the present application, the core layer 220 is in the first directionLength dimension L0Long enough to ensure adequate absorption of the target incident light.
It should be noted that the intrinsic absorption coefficients of the core layer 220 are different for target incident light with different wavelengths, and for target incident light with a wavelength close to the forbidden bandwidth of the core layer 220, the intrinsic absorption coefficients are different
Figure GDA0003303563120000081
When used, the core layer 220 may sufficiently absorb the target incident light.
In some embodiments of the present application, as shown in fig. 3, the core layer 220 has a width dimension W in a direction perpendicular to the first direction0Less than or equal to 30 mu m. For example, W0May be 0.3. mu.m, 10. mu.m, 24. mu.m, 28. mu.m, etc.
In the embodiment of the application, the size of the core layer 220 is micron-sized, so that the whole size of the detector is small, the integration on a chip is easy, and the requirements on integrated and miniaturized photoelectric devices in the future can be met.
In some embodiments of the present application, as shown in fig. 2 and 3, the length dimension l of the P-type and N-type ohmic contact regions 221 and 222 in the first direction0Not greater than 10 microns. For example, |0And may be 5 microns, 6 microns, 10 microns, etc.
In the embodiment of the present application, the first branches of the P-type ohmic contact region 221 and the second branches of the N-type ohmic contact region 222 are alternately distributed along the first direction to form a P-N-P interdigital electrical structure. The target incident light is continuously transported in the core layer 220 along the first direction, and the generated photogenerated carriers are absorbed by the first branches 2231 and the second branches 2241 which are alternately distributed along the first direction.
In some embodiments of the present application, a reverse bias voltage is applied to the P-type electrode 223 and the N-type electrode 224.
In the embodiment of the present application, on the basis of the electric fields of the P-type electrode 223 and the N-type electrode 224, a reverse bias voltage may be applied to the P-type electrode 223 and the N-type electrode 224 by the power supply 201 (see fig. 2 and 3). This allows photo-generated carriers (electrons and holes) to be more effectively separated and move to the P-type ohmic contact regions 211 and the N-type ohmic contact regions 212, and to be sufficiently collected by the P-type electrodes 223 and the N-type electrodes 224, thereby further improving the external quantum efficiency of the photodetector.
In some embodiments of the present application, the optical waveguide structure is strip-shaped or ring-shaped.
In the embodiment of the present application, the optical waveguide structure is configured to be ring-shaped, so that the target incident light 300 can resonate in the core layer 220 all the time, and is transmitted in the optical waveguide structure in a whispering gallery mode in a "winding" manner, thereby acting with the core layer 220 sufficiently, and further improving the absorption efficiency of the core layer 220 on the target incident light 300.
In some embodiments of the present application, the adjacent P-type ohmic contact regions 221 are spaced apart from the N-type ohmic contact region 222;
wherein, the distance I between the P-type ohmic contact region 221 and the N-type ohmic contact region 222 is not greater than 10 μm.
It is noted that, as shown in fig. 2 and 3, the P-type ohmic contact region 221 and the N-type ohmic contact region 222 are closely connected to each other one after another. The P-N interdigital structure can generate an avalanche multiplication effect under the condition of applying high reverse bias voltage, has large current gain, can amplify optical signals and realize effective detection of weak light.
In addition to such P-N interdigital structure, as shown in fig. 4, adjacent P-type ohmic contact regions 221 and N-type ohmic contact regions 222 may be disposed at intervals, that is, there is an I region undoped to the core layer 220 between the adjacent P-type ohmic contact regions 221 and N-type ohmic contact regions, so as to form a P-I-N interdigital structure, wherein the interval distance I is less than 10 micrometers, for example, I may be 5 micrometers, 6 micrometers, or the like. The structure works under low bias voltage, has small dark current, has the advantages of wide depletion region and wide electric field coverage range, and can effectively collect photon-generated carriers, so the detection efficiency of the photoelectric detector can be further improved by adopting the structure. It is understood that the I region is not provided with an electrode, and the electrodes are connected to the P-type ohmic contact region 221 and the N-type ohmic contact region only, as in fig. 2 and 3.
In some embodiments of the present application, the optical waveguide structure further comprises a coupling structure and/or an anti-reflection structure disposed at the first end of the core layer 220.
In the embodiment of the present application, the coupling structure can enable the target incident light 300 to be smoothly coupled into the core layer 220; the use of an anti-reflection structure may reduce reflection of the target incident light 300 into the core layer 220 as much as possible.
In some embodiments of the present application, the coupling structure is a grating coupling structure or a prism coupling structure; the anti-reflection structure is an anti-reflection film or an anti-reflection lens. In addition, the coupling structure may employ end coupling, waveguide coupling, or the like. As shown in fig. 2 to 4, the optical waveguide structure employs end-face coupling.
In some embodiments of the present application, the optical waveguide structure is strip-shaped;
the optical waveguide structure further includes a reflective structure disposed at a second end of the core layer 220, wherein the second end is a light exit end opposite the first end.
For the optical waveguide structure with a stripe structure, the reflective structure is disposed at the second end of the core layer 220 away from the first end, so that the target incident light 300 can be prevented from being emitted from the second end, and the target incident light 300 can be retained in the core layer 220 as much as possible, so as to interact with the core layer 220 to generate photon-generated carriers (electrons and holes), thereby further improving the absorption efficiency of the core layer 220 for the target incident light 300.
In some embodiments of the present application, the reflective structure may be a metal mirror or a distributed bragg mirror.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments.
The above description is only for the preferred embodiment of the present application, and is not intended to limit the scope of the present application. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application are included in the protection scope of the present application.

Claims (9)

1. An interdigital guided-mode photodetector, comprising:
an optical waveguide structure comprising a core layer (220) and a cladding layer (225) surrounding the core layer (220), the core layer (220) extending a predetermined distance in a first direction to substantially absorb a target incident light (300), a first end of the core layer (220) for receiving the target incident light (300); the target incident light (300) enters the optical waveguide structure and then propagates along the first direction in the form of guided-mode light;
a plurality of P-type ohmic contact regions (221) and a plurality of N-type ohmic contact regions (222) which are doped portions of the top of the core layer (220), each extending in a second direction perpendicular to the first direction, and arranged alternately in the first direction; and the number of the first and second groups,
a P-type electrode (223) and an N-type electrode (224) extending in the first direction; the P-type electrode (223) is provided with a plurality of first branches (2231) which are arranged in parallel, each first branch (2231) is attached to one P-type ohmic contact region (221) and used for collecting holes generated by interaction between the target incident light (300) and the core layer (220); the N-type electrode (224) is provided with a plurality of second branches (2241) which are parallel, each second branch (2241) is attached to one N-type ohmic contact region (222) and used for collecting electrons generated by interaction between the target incident light (300) and the core layer (220).
2. The method of claim 1Characterized in that the core layer (220) has a length dimension L in the first direction0，
Figure FDA0003303563110000011
α (λ) is the intrinsic absorption coefficient of the core layer (220), λ is the wavelength of the target incident light (300).
3. The interdigital guided-mode photodetector of claim 1, wherein the core layer (220) has a width dimension W in a direction perpendicular to the first direction0≤30μm。
4. The interdigital guided-mode photodetector of claim 1, wherein the length dimension l of said P-type ohmic contact regions (221) and N-type ohmic contact regions (222) along said first direction0Not greater than 10 microns.
5. The interdigital guided mode photodetector of claim 1, wherein said P-type electrode (223) and N-type electrode (224) are applied with a reverse bias voltage.
6. The guided mode photodetector of any one of claims 1 to 5, wherein the optical waveguide structure is a strip.
7. The interdigital guided mode photodetector of any one of claims 1 to 5, wherein adjacent said P-type ohmic contact regions (221) are spaced apart from said N-type ohmic contact regions (222);
wherein the P-type ohmic contact region (221) and the N-type ohmic contact region (222) are separated by a distance I of not more than 10 microns.
8. The interdigital guided mode photodetector of any one of claims 1-5, wherein the optical waveguide structure further comprises a coupling structure and/or an anti-reflection structure disposed at the first end of the core layer (220).
9. The interdigital guided-mode photodetector of any one of claims 1 to 5, wherein the optical waveguide structure has a bar shape;
the optical waveguide structure further comprises a reflective structure arranged at a second end of the core layer (220), wherein the second end is a light exit end opposite to the first end.
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