CN108899388B - Silicon-based graphene photoelectric detector - Google Patents
Silicon-based graphene photoelectric detector Download PDFInfo
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- CN108899388B CN108899388B CN201810701611.7A CN201810701611A CN108899388B CN 108899388 B CN108899388 B CN 108899388B CN 201810701611 A CN201810701611 A CN 201810701611A CN 108899388 B CN108899388 B CN 108899388B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 150000002739 metals Chemical class 0.000 claims abstract description 7
- 238000005253 cladding Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 19
- 230000005684 electric field Effects 0.000 abstract description 10
- 230000003993 interaction Effects 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
Abstract
The invention discloses a silicon-based graphene photoelectric detector which comprises a silicon waveguide, an oxide substrate layer, an oxide cladding layer and graphene, and further comprises sub-wavelength metal electrodes formed by first metal electrodes and second metal electrodes which are symmetrically arranged, wherein the sub-wavelength metal electrodes are formed by arranging two different metals above the silicon waveguide in a crossed mode. According to the invention, two different metals are contacted with graphene to generate doping with different concentrations or types, so that a potential difference is introduced between sub-wavelength metal electrodes to drive a photon-generated carrier to flow to the two electrodes; according to the invention, through the cross arrangement structure of the electrodes, the contact area between the electrodes and graphene is increased, and the absorption efficiency of carriers is improved; according to the invention, graphene is attached to the upper surface of the sub-wavelength metal electrode, the sub-wavelength metal electrode performs optical field regulation on a Transverse Magnetic (TM) mode transmitted in the silicon waveguide, and an electric field component parallel to the direction of the graphene is increased, so that the interaction between an optical field and the graphene is enhanced, and the responsivity of the detector is improved.
Description
Technical Field
The invention belongs to the field of optics, and particularly relates to a silicon-based graphene photoelectric detector.
Background
Silicon-based photonics has many advantages over conventional optical platforms, such as low power consumption, large bandwidth, small size, compatibility with conventional microelectronic fabrication processes (i.e., CMOS processes), and the like, and has been developed as an important discipline for solving next-generation high-speed optical communication and optical interconnection. The photodetector is a basic device on a silicon-based platform, and has received extensive attention and research. Common on-chip detectors include III-V detectors and germanium (Ge) detectors, but the III-V detectors are not compatible with conventional CMOS processes, resulting in high manufacturing cost, while Ge detectors have difficulty in exceeding 100GHz due to their inherent electrical property. In recent years, the advent of new materials has created new opportunities for the development of detectors. Graphene, as a typical two-dimensional material, has many excellent photoelectric properties, and can be developed into a novel on-chip photodetector.
The high-speed graphene detector is reported in 2009 at the earliest, and theories show that the bandwidth of the graphene detector is expected to exceed 500GHz due to the ultrahigh carrier mobility of the graphene detector. However, the original graphene detector is based on a vertical incidence structure, an optical field is only contacted with graphene once, and the interaction between the optical field and the graphene is weak, so that the responsivity of the detector is low. In order to enhance the interaction between the optical field and the graphene, the graphene is combined with the waveguide, and the evanescent field of the waveguide is in long-distance contact with the graphene, so that the interaction between the optical field and the graphene is enhanced, and the responsivity of the graphene can be improved by 1-2 orders of magnitude. In order to further enhance the interaction between the optical field and graphene, new researches on the structure of the silicon waveguide have been made, including a metal-assisted structure and a resonant cavity structure, but the former introduces additional optical loss, and the latter causes a resonance effect, both of which adversely affect the performance of the detector.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to solve the technical problems that the responsivity of a detector is lower due to the limited interaction of an optical field and graphene, the bandwidth of the detector is limited due to a large-size structure, and high extra optical loss is introduced by a common metal auxiliary structure in a common silicon-based waveguide.
In order to achieve the above object, an embodiment of the present invention provides a silicon-based graphene photodetector, including a silicon waveguide, an oxide substrate layer, an oxide cladding layer, and graphene,
the photoelectric detector also comprises a first metal electrode and a second metal electrode which are symmetrically arranged, the two electrodes both adopt sub-wavelength metal structures to jointly form the sub-wavelength metal electrodes,
the sub-wavelength metal electrode is arranged above the silicon waveguide in a crossed mode by adopting two different metals.
Specifically, the arrangement period of the sub-wavelength metal electrode structure is less than or equal to 200 nm.
Specifically, the graphene is attached to the upper surface of the sub-wavelength metal electrode.
Specifically, the length and the width of the photoelectric detector are both in the micron level.
Generally, compared with the prior art, the above technical solution conceived by the present invention has the following beneficial effects:
(1) according to the invention, two different metals are contacted with graphene to dope the graphene in different concentrations or types, so that a potential difference is introduced between the sub-wavelength metal electrodes to drive a photon-generated carrier to flow to the two electrodes.
(2) According to the invention, through the crossed arrangement structure of the electrodes, the contact area between the electrodes and graphene is increased, so that the absorption efficiency of carriers is improved.
(3) According to the invention, graphene is attached to the upper surface of the sub-wavelength metal electrode, the sub-wavelength metal electrode performs optical field regulation on a TM mode transmitted in the silicon waveguide, and an electric field component parallel to the direction of the graphene is increased, so that the interaction between an optical field and the graphene is enhanced, and the responsivity of the detector is improved.
(4) According to the invention, through the characteristic of the sub-wavelength structure, the electric field energy is mainly concentrated in the gap between the metal and the metal, so that excessive contact with the metal is avoided, and the optical loss of the metal is reduced.
(5) The invention adopts the metal auxiliary type silicon waveguide, avoids the resonance effect, thereby realizing the broadband response; the length and the width of the detector are controlled to be in a micron level, so that the size of the whole detector is small, and the large bandwidth of the detector is guaranteed.
Drawings
Fig. 1 is a schematic structural diagram of a common silicon-based graphene photodetector in the prior art.
Fig. 2 is a schematic structural diagram of a silicon-based graphene photodetector according to an embodiment of the present invention.
Fig. 3 is a comparison graph of electric field components of a common silicon-based graphene photodetector and a silicon-based graphene photodetector provided by the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Fig. 1 is a schematic structural diagram of a common silicon-based graphene photodetector in the prior art. As shown in fig. 1, a common silicon-based graphene photodetector includes a silicon waveguide 1, an oxide substrate layer 2, an oxide cladding layer 3, a first metal electrode 4, a second metal electrode 5, and graphene 6.
The silicon waveguide 1 functions as a light guide, and a rectangular silicon waveguide having a width of 500nm is generally used to support single-mode transmission of 1550nm light.
The oxide substrate layer 2 and the oxide cladding layer 3 serve as support and protection.
The first metal electrode 4 and the second metal electrode 5 are respectively contacted with the graphene 6 to generate P+P, N, respectively.
The graphene 6 is a common two-dimensional material, and has the functions of absorbing light in the waveguide, generating a photon-generated carrier and transporting the carrier.
In a common silicon-based graphene photoelectric detector, graphene is laid on a silicon waveguide, and then an electrode is grown on the graphene. The graphene 6 is directly paved above the silicon waveguide 1, and the optical field can only interact with the graphene in the form of evanescent waves. Due to the characteristics of the graphene two-dimensional material, graphene can only interact with an electric field component parallel to the graphene, most of electric field energy of a TM mode in the silicon waveguide is concentrated in a light direction perpendicular to the graphene, and the performance of the silicon-based graphene detector is further limited.
Fig. 2 is a schematic structural diagram of a silicon-based graphene photodetector according to an embodiment of the present invention. As shown in fig. 2, the silicon-based graphene photoelectric detector provided by the invention comprises a silicon waveguide 1, an oxide substrate layer 2, an oxide cladding layer 3 and graphene 6, wherein the photoelectric detector further comprises a sub-wavelength metal electrode formed by a first metal electrode 4 and a second metal electrode 5 which are symmetrically arranged, and the sub-wavelength metal electrode is arranged above the silicon waveguide in a crossed manner by adopting two different metals. The graphene is not attached to the silicon waveguide any more, but is attached to the upper surface of the metal electrode by an external transfer technology.
The sub-wavelength in this embodiment means that the period of the two metals arranged in a crossed manner is much shorter than the wavelength of the working light. Specifically, the arrangement period of the sub-wavelength metal electrode structure is less than or equal to 200 nm. According to the equivalent medium model, the sub-wavelength metal structure can be equivalent to a layer of anisotropic medium, and the TM mode distribution in the waveguide at the moment can be calculated according to the optical waveguide theory. In the embodiment, due to the design of the sub-wavelength metal electrode structure, the interaction between the optical field and the graphene is greatly enhanced, so that the size of the whole detector can be very small, the length can be controlled to be about 10 micrometers, and the width can be controlled to be about 2 micrometers. The compact structure ensures the bandwidth of the silicon-based graphene detector, and the bandwidth of the whole device can exceed 200GHz under the condition of not considering the carrier transit time (the graphene has ultrahigh carrier mobility).
Fig. 3 is a comparison graph of electric field components of a common silicon-based graphene photodetector and a silicon-based graphene photodetector provided by the present invention. The wire frame in fig. 3 represents a silicon waveguide region. As shown in fig. 3, since graphene can only interact with the electric field component parallel to the graphene, most of the electric field energy of the TM mode in the silicon waveguide is concentrated in the light perpendicular to the graphene. Most of electric field energy in the silicon-based graphene photoelectric detector provided by the invention is concentrated on the direction parallel to the graphene and is concentrated on the upper surface of the metal sub-wavelength structure.
The above description is only for the preferred embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (3)
1. A silicon-based graphene photoelectric detector comprises a silicon waveguide, an oxide substrate layer, an oxide cladding and graphene, and is characterized in that,
the photoelectric detector also comprises a first metal electrode and a second metal electrode which are symmetrically arranged, the two electrodes both adopt sub-wavelength metal structures to jointly form the sub-wavelength metal electrodes,
the sub-wavelength metal electrode is formed by arranging two different metals above the silicon waveguide in a crossed manner;
the arrangement period of the sub-wavelength metal electrode structure is less than or equal to 200 nm.
2. The silicon-based graphene photodetector of claim 1, wherein the graphene is attached to an upper surface of the sub-wavelength metal electrode.
3. The silicon-based graphene photodetector of claim 1, wherein the photodetector has a length and a width on the order of micrometers.
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| CN110854234A (en) * | 2019-11-14 | 2020-02-28 | 苏州枫桥光电科技有限公司 | Graphene photoelectric detector based on interdigital electrode structure |
| CN112838136B (en) * | 2020-12-31 | 2023-03-03 | 中北大学 | Ultra-broadband graphene photoelectric detector |
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| US8053782B2 (en) * | 2009-08-24 | 2011-11-08 | International Business Machines Corporation | Single and few-layer graphene based photodetecting devices |
| US8039292B2 (en) * | 2009-11-18 | 2011-10-18 | International Business Machines Corporation | Holey electrode grids for photovoltaic cells with subwavelength and superwavelength feature sizes |
| CN102201483B (en) * | 2011-05-13 | 2012-10-03 | 中国科学院半导体研究所 | Silicon nanowire grating resonant enhanced photoelectric detector and manufacturing method thereof |
| KR101771427B1 (en) * | 2011-11-02 | 2017-09-05 | 삼성전자주식회사 | Waveguide-integrated graphene photodetector |
| US8785855B2 (en) * | 2012-10-16 | 2014-07-22 | Uvic Industry Partnerships Inc. | Interlaced terahertz transceiver using plasmonic resonance |
| CN104157722B (en) * | 2014-08-18 | 2016-05-18 | 浙江大学 | A kind of silicon-Graphene avalanche photodetector |
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