CN107871736B - Full waveguide type transverse polycrystalline silicon optical interconnection system based on standard CMOS process - Google Patents
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Abstract
A full waveguide type transverse polysilicon optical interconnection system based on standard CMOS process comprises a substrate, a shallow trench isolation layer and a gate oxide layer sequentially arranged from bottom to top, wherein the upper end surface of the gate oxide layer is provided withWith SiO2Layer of SiO2The layers are respectively embedded with: the optical interconnection layer is positioned at the upper end of the gate oxide layer and the metal light reflection plate is positioned above the optical interconnection layer, wherein the optical interconnection layer comprises a first polycrystalline silicon photoelectric detector, a first polycrystalline silicon optical waveguide, a polycrystalline silicon LED group, a second polycrystalline silicon optical waveguide, a second polycrystalline silicon photoelectric detector and SiO2A plurality of connecting wire holes and external connecting wires penetrating through the connecting wire holes, which are used for connecting the first polycrystalline silicon photoelectric detector, the second polycrystalline silicon photoelectric detector and the polycrystalline silicon LED group with an external power supply, are also embedded in the isolation layer, and wire passing holes or wire passing grooves which are used for penetrating through the external connecting wires are formed in the metal light reflection plate. The invention fully utilizes the LED to send out optical signals, increases the responsivity of the optical interconnection system and reduces the energy loss.
Description
Technical Field
The invention relates to a full waveguide type transverse polycrystalline silicon optical interconnection system. In particular to a full waveguide type transverse polysilicon optical interconnection system based on a standard CMOS process.
Background
With the rapid development of science and technology, microelectronic products are developing in a small and smart direction. The development of microelectronics has met the bottleneck of physical limits into the 21 st century. Further scaling down by "moore's law" not only dramatically increases manufacturing costs, but also results in undesirable physical effects. Another more pressing bottleneck is the latency and power consumption of the electrical interconnects within the microelectronic chip. As the degree of integration increases, the delay of individual transistors becomes smaller and smaller, whereas the delay of the interconnect lines becomes larger and larger, and the reduction in the size of the interconnect lines increases the resistance of the interconnect lines, thereby increasing power consumption. It is noted that the optoelectronic technology using light as a signal carrier not only has high transmission speed, high frequency and large propagation information capacity, but also does not generate crosstalk between signals when the light beams cross when propagating in a three-dimensional space. If the microelectronic technology is combined with the photoelectronic technology and a standard CMOS process is used to prepare an all-silicon optoelectronic integrated circuit (OEIC) on the surface of a silicon substrate, the speed of processing information by the circuit can be greatly improved on the premise of keeping the process cost of the integrated circuit basically unchanged.
High efficiency silicon-based luminescenceDevices (Si-LEDs) and photodetectors are the basis and core for implementing OEICs. Therefore, in recent years, researchers have conducted a lot of research on Si-LEDs and corresponding detectors, and various types of Si-LEDs and detectors are designed. At present, the device with the best compatibility with the standard CMOS process is a silicon PN junction light-emitting device, the wavelength of light emitted by the device is within the detectable range of a Si-based detector, the response speed is high, and the requirements of silicon optoelectronic integration can be met, so that the device has a good application prospect in Si OEIC. However, the PN junction light emitting device has a problem of low light emitting efficiency, which is difficult to solve. The reason for this is that, in addition to the low luminous efficiency of the Si-based PN-LED itself, there is also a large loss in the design structure: firstly, Si-LED luminescence is a junction formed by a high-doped junction and a low-doped well, the part which can be measured and seen outside is only a side PN junction upward luminescence part, and the light emitted by other parts is absorbed by bulk silicon and can not be used as a transmission signal, so that serious energy loss is caused; secondly, the surface of the silicon is covered with an oxide layer in the common CMOS process, and light emitted by the silicon PN-LED is incident to SiO from the silicon2In contrast, silicon has a refractive index of SiO2The refractive index is much larger, which causes that a large part of the light emitted by the bulk silicon LED can not be transmitted out due to the total reflection effect. Zhang Xingjie et al [1]]The polycrystalline silicon PIN-LED is successfully prepared based on a standard CMOS process, and the electrical and optical characteristics of the polycrystalline silicon PIN-LED are very similar to those of a single crystal Si-LED when successfully tested. Patent [2]]A new optical interconnect structure consisting of a single crystal silicon LED and a polysilicon PIN photodetector has been proposed. The method provides a thought for people, the PIN-LED can be manufactured by utilizing polysilicon to emit light, optical signals are transmitted by utilizing two modes of polysilicon optical waveguide total reflection and oxide layer metal reflection, and the polysilicon PIN photoelectric detector receives the optical signals and converts the optical signals into electric signals. When the incident angle of the optical signal incident to the oxide layer from the polycrystalline silicon is larger than 25 degrees, the optical signal is totally reflected, then the PIN-LED is used as a light-emitting device, a part of the optical signal is emitted out of the surface of the polycrystalline silicon and is reflected to a photoelectric detector through upper-layer metal, a part of the optical signal is directly transmitted to the photoelectric detector through the polycrystalline silicon waveguide in a total reflection mode, and only a small part of the light is transmitted to the lower portion of the device to be lost. In addition, polysilicon has a high resistance when not doped and is thinner than bulk siliconSo that the polysilicon waveguide has a better electrical isolation effect when the LED is at the same distance from the photodetector. Thus, the optical signal emitted by the LED can be fully utilized, and the responsivity of the interconnection system can be effectively increased.
Disclosure of Invention
The invention aims to solve the technical problem of providing a full waveguide type transverse polycrystalline silicon optical interconnection system based on a standard CMOS (complementary metal oxide semiconductor) process, which can fully utilize an LED to send optical signals, increase the responsivity of the optical interconnection system and reduce the energy loss.
The technical scheme adopted by the invention is as follows: a full waveguide type transverse polysilicon optical interconnection system based on standard CMOS process comprises a substrate, a shallow trench isolation layer and a gate oxide layer which are sequentially arranged from bottom to top, wherein the upper end surface of the gate oxide layer is provided with SiO2Layer of said SiO2The layers are respectively embedded with: the optical interconnection layer is positioned at the upper end of the gate oxide layer and the metal light reflection plate is positioned above the optical interconnection layer, wherein the optical interconnection layer comprises a first polycrystalline silicon photoelectric detector, a first polycrystalline silicon optical waveguide, a polycrystalline silicon LED group, a second polycrystalline silicon optical waveguide and a second polycrystalline silicon photoelectric detector which are sequentially arranged from left to right, and the SiO is2The isolation layer is also embedded with a plurality of connecting wire holes and external connecting wires penetrating through the connecting wire holes, wherein the connecting wire holes are used for connecting the first polycrystalline silicon photoelectric detector, the second polycrystalline silicon photoelectric detector and the polycrystalline silicon LED group with an external power supply, and the metal light reflection plate is provided with wire passing holes or wire passing grooves used for penetrating through the external connecting wires.
The first polycrystalline silicon photoelectric detector and the second polycrystalline silicon photoelectric detector have the same structure and respectively comprise a photoelectric detector cathode, a photoelectric detector I area and a photoelectric detector anode which are sequentially arranged from front to back.
A a plurality of wire hole and the external conductor that runs through the wire hole that is used for first polycrystalline silicon photoelectric detector and second polycrystalline silicon photoelectric detector to link to each other with external power source including: the photoelectric detector comprises a photoelectric detector cathode connecting wire hole vertically formed on the upper end surface of a photoelectric detector cathode, a photoelectric detector cathode external connecting wire penetrating through the photoelectric detector cathode connecting wire hole and connected with the photoelectric detector cathode, a photoelectric detector anode connecting wire hole vertically formed on the upper end surface of a photoelectric detector anode, and a photoelectric detector anode external connecting wire penetrating through the photoelectric detector anode connecting wire hole and connected with the photoelectric detector anode.
The polycrystalline silicon LED group comprises a first LED cathode, a first LED I area, an LED anode, a second LED I area and a second LED cathode which are sequentially arranged from front to back.
The external lead for the plurality of wire connecting holes and the penetrating wire connecting holes which are connected with the external power supply by the polycrystalline silicon LED group comprises: the LED cathode connection wire comprises a first LED cathode connection wire hole, a second LED cathode connection wire hole, an LED anode connection wire hole, an LED cathode external connection wire and an LED anode external connection wire, wherein the first LED cathode connection wire hole is vertically formed in the upper end face of a first LED cathode, the second LED cathode connection wire hole is vertically formed in the upper end face of a second LED cathode, the LED anode connection wire hole is vertically formed in the upper end face of an LED anode, the first LED cathode connection wire hole, the second LED cathode connection wire hole, the LED cathode external connection wire and the LED anode external connection wire are respectively penetrated through, and the LED anode external connection wire is penetrated through the LED anode connection.
The wire passing hole formed on the metal light reflecting plate is a wire passing hole which is positioned in the center and is used for penetrating through an external lead of an LED anode, and the wire passing grooves formed on the metal light reflecting plate are respectively a wire passing groove which is formed on the edge of the metal light reflecting plate and is respectively used for penetrating through an external lead of a cathode of a photoelectric detector, a wire passing groove which is used for penetrating through an external lead of an anode of the photoelectric detector and a wire passing groove which is used for penetrating through an external lead of an LED cathode.
The full waveguide type transverse polycrystalline silicon optical interconnection system based on the standard CMOS process fully utilizes the light signals emitted by the LED, increases the responsivity of the optical interconnection system and reduces the energy loss. The invention has the technical characteristics that:
1. in order to solve the problem of low utilization rate of LED optical signals in an optical interconnection system, the invention designs a polysilicon optical interconnection system, so that input electric signals can be converted into optical signals through polysilicon PIN-LEDs, a part of the emitted optical signals is emitted into an oxide layer through the upper surface and then reflected to the surface of a photoelectric detector through a metal plate, and a part of the emitted optical signals is transmitted to the photoelectric detectors at two ends through optical waveguide total reflection. Because the light-emitting LED, the light-receiving PD and the light-transmitting waveguide are positioned in the same optical waveguide, compared with the traditional optical interconnection structure, the optical interconnection structure more fully utilizes optical signals emitted by the LED and effectively improves the responsivity of an optical interconnection system. The invention can provide some new and beneficial references for the optical interconnection system based on the standard CMOS process.
2. In the invention, P + and N + ion implantation is carried out at different positions on the surface of the polycrystalline silicon to prepare a polycrystalline silicon PIN structure as a light-emitting device and a photoelectric detector of an optical interconnection structure; the undoped high-resistance polysilicon is used as an optical waveguide.
3. The polysilicon PIN-LED and the photoelectric detector in the novel optical interconnection system are horizontally arranged on the position, so that optical signals can be conveniently transmitted, and a shallow channel isolation layer (SiO) with the thickness of about 400nm is arranged below the optical interconnection system2) The silicon-based optical waveguide isolation structure not only isolates an optical interconnection system from bulk silicon, but also provides an oxide layer for polycrystalline silicon and provides a good total reflection condition for optical signals in the waveguide.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a full waveguide type lateral polysilicon optical interconnection system based on a standard CMOS process according to the present invention;
FIG. 2 is the SiO removed version of FIG. 12(8) A top view of;
FIG. 3 is a cross-sectional view A-A of FIG. 2;
fig. 4 is a sectional view B-B of fig. 2.
In the drawings
1: substrate 2: shallow trench isolation layer
3: gate oxide layer 4 a: first polysilicon photodetector
4 b: second polysilicon photodetector 4.1: cathode of photoelectric detector
4.2: photodetector anode 4.3: photoelectric detector I area
5 a: first polysilicon optical waveguide 5 b: second polysilicon optical waveguide
6: polysilicon LED group 6.1 a: first LED cathode
6.1 b: second LED cathode 6.2 a: first LED I area
6.2 b: second LED I-region 6.3: LED anode
7: metal light reflection plate 8: SiO 22Layer(s)
9: photoelectric detector anode connecting wire hole 10: external lead for anode of photoelectric detector
11: photodetector cathode wiring hole 12: external lead for cathode of photoelectric detector
13: LED anode wiring hole 14: LED anode external lead
15 a: first LED cathode wiring hole 15 b: second LED cathode connecting wire hole
16: LED cathode external lead 17: wire through hole
Detailed Description
The invention is described in detail below with reference to embodiments and drawings, wherein the embodiments and drawings are used to describe a full waveguide type lateral polysilicon optical interconnection system based on a standard CMOS process.
As shown in figure 1, the full waveguide type transverse polysilicon optical interconnection system based on the standard CMOS process comprises a P-Sub substrate 1, a shallow trench isolation (field oxide) layer 2 and a gate oxide layer 3 which are arranged from bottom to top in sequence, wherein the upper end surface of the gate oxide layer 3 is provided with SiO2Isolation layer 8 of SiO2The isolation layer 8 is embedded with: the optical interconnection layer is positioned at the upper end of the gate oxide layer 3, and the metal light reflection plate 7 is positioned above the optical interconnection layer, wherein the optical interconnection layer comprises a first polycrystalline silicon photoelectric detector 4a, a first polycrystalline silicon optical waveguide 5a, a polycrystalline silicon LED group 6, a second polycrystalline silicon optical waveguide 5b and a second polycrystalline silicon photoelectric detector 4b which are sequentially arranged from left to right, and the SiO is positioned on the upper end of the gate oxide layer2A plurality of connecting wire holes and external connecting wires penetrating through the connecting wire holes, which are used for connecting the first polycrystalline silicon photoelectric detector 4a, the second polycrystalline silicon photoelectric detector 4b and the polycrystalline silicon LED group 6 with an external power supply, are also embedded in the isolation layer 8, and the metal light reflection plate 7 is provided with wire passing holes or wire passing grooves which are used for penetrating through the external connecting wires.
The polysilicon LED group 6 can emit infrared light in a forward bias mode and can emit visible light in a reverse bias mode. The first polycrystalline silicon photoelectric detector and the second polycrystalline silicon photoelectric detector are respectively positioned on two sides of the polycrystalline silicon LED group, the P area and the N area are far away, and the detector is wide. This helps the first and second polysilicon photodetectors to more fully respond to the optical information generated by the polysilicon LED group.
The polysilicon LED group is positioned between the first polysilicon photoelectric detector and the second polysilicon photoelectric detector, and part of optical signals emitted by the polysilicon LED group are emitted to SiO through the upper surface2The isolation layer is then reflected to the surfaces of the first polycrystalline silicon photoelectric detector and the second polycrystalline silicon photoelectric detector through the metal light reflection plate 7, one part of the isolation layer is transmitted to the first polycrystalline silicon photoelectric detector and the second polycrystalline silicon photoelectric detector at two ends through the total reflection of the first polycrystalline silicon optical waveguide and the second polycrystalline silicon optical waveguide, and a small part of the isolation layer is incident to the gate oxide layer through the lower surface and is lost.
A shallow trench isolation (field oxide) layer and a gate oxide layer with the thickness of about 400nm are arranged between the optical interconnection layer and the bulk substrate, so that the optical interconnection layer is well isolated from the substrate, an oxide layer is provided for the polycrystalline silicon waveguide, and a good total reflection condition is provided for optical signals in the waveguide.
As shown in fig. 2, the first polysilicon photodetector 4a and the second polysilicon photodetector 4b have the same structure, and each includes a photodetector cathode 4.1, a photodetector I-region 4.3, and a photodetector anode 4.2, which are sequentially arranged from front to back.
As shown in fig. 2 and fig. 3, the external lead for the plurality of wire holes and the through wire holes, where the first polysilicon photodetector 4a and the second polysilicon photodetector 4b are connected to an external power source, includes: the photoelectric detector comprises a photoelectric detector cathode connecting wire hole 11 vertically formed on the upper end surface of the photoelectric detector cathode 4.1, a photoelectric detector cathode external lead 12 penetrating through the photoelectric detector cathode connecting wire hole 11 and connected with the photoelectric detector cathode 4.1, a photoelectric detector anode connecting wire hole 9 vertically formed on the upper end surface of the photoelectric detector anode 4.2 and a photoelectric detector anode external lead 10 penetrating through the photoelectric detector anode connecting wire hole 9 and connected with the photoelectric detector anode 4.2.
As shown in fig. 2, the polysilicon LED group 6 includes a first LED cathode 6.1a, a first LED I region 6.2a, an LED anode 6.3, a second LED I region 6.2b, and a second LED cathode 6.1b, which are sequentially arranged from front to back.
As shown in fig. 2 and 4, the external lead for connecting the plurality of wire holes and the through wire holes of the polysilicon LED group 6 to the external power supply includes: the LED cathode wire connecting structure comprises a first LED cathode wire connecting hole 15a vertically formed on the upper end surface of the first LED cathode 6.1a, a second LED cathode wire connecting hole 15b vertically formed on the upper end surface of the second LED cathode 6.1b, an LED anode wire connecting hole 13 vertically formed on the upper end surface of the LED anode 6.3, an LED cathode external lead 16 respectively penetrating through the first LED cathode wire connecting hole 15a, the second LED cathode wire connecting hole 15b, the first LED cathode 6.1a and the second LED cathode 6.1b, and an LED anode external lead 14 penetrating through the LED anode wire connecting hole 13 and connected with the LED anode 6.3.
As shown in fig. 2 and 4, the wire passing hole formed on the metal light reflector 7 is a wire passing hole 17 located at the center and used for passing through the LED anode external lead 14, and the wire passing grooves formed on the metal light reflector 7 are wire passing grooves respectively formed at the edge of the metal light reflector 7 and used for passing through the photodetector cathode external lead 12, the photodetector anode external lead 10 and the LED cathode external lead 16.
The working principle of the optical interconnection system is as follows: under the working state of positive bias ion implantation, the polycrystalline silicon LED group 6 sends out optical signals according to the input electric signals. The light which is emitted upwards and has a smaller included angle with the vertical normal is transmitted upwards in an inclined way and is finally reflected to the first polycrystalline silicon photoelectric detector 4a and the second polycrystalline silicon photoelectric detector 4b through the metal light reflecting plate 7; the light which is emitted upwards and has a larger included angle with the vertical normal is totally reflected by the first polysilicon optical waveguide 5a and the second polysilicon optical waveguide 5b, and is transmitted to the first polysilicon photoelectric detector 4a and the second polysilicon photoelectric detector 4b together with the light emitted laterally through the first polysilicon optical waveguide 5a and the second polysilicon optical waveguide 5 b. The optical signal incident on the photodetector I region is converted into an electrical signal by being transmitted to the first polysilicon photodetector 4a and the second polysilicon photodetector 4b operating in the reverse bias state. The optical interconnection effect of the whole chip is realized.
The invention relates to a full waveguide type transverse polycrystalline silicon optical interconnection system based on a standard CMOS process, which comprises the following concrete implementation methods:
1) carrying out thermal oxidation to form a buffer layer by adopting a lightly doped P-type silicon wafer with the crystal orientation of <100 >;
2) spin-coating photoresist and exposing the whole wafer. Removing the photoresist of the exposed area to form a shallow trench isolation layer, namely 2 in the figure 1, on the exposed surface;
3) removing the photoresist, and forming a high-quality thin gate oxide layer on the surface of the wafer by using a thermal oxidation method, namely 3 in fig. 1;
4) depositing a polycrystalline silicon layer on the surface of the wafer by using a Low Pressure Chemical Vapor Deposition (LPCVD) technology to serve as a polycrystalline silicon optical interconnection system layer;
5) and coating photoresist on the wafer, and defining the region of the required polysilicon optical interconnection system by utilizing a photoetching technology. Then, etching the structure of the multi-optical interconnection system by utilizing an active ion etching technology, and removing the photoresist on the surface;
6) an oxidation technology is utilized to form an oxidation layer on the surface of the wafer, so that the surface of the device is protected from being influenced by the subsequent process. After coating photoresist, etching the anodes (P + regions) of the polycrystalline silicon photoelectric detector and the polycrystalline silicon LED, namely 4.2 regions and 6.3 regions in figure 2, by utilizing a photoetching technology, shielding the photoelectric detector and the cathodes (N + regions) of the polycrystalline silicon LED, namely 4.1 regions, 6.1a regions and 6.1b regions in figure 2, and then injecting boron elements into 4.2 regions and 6.3 regions in figure 2 by utilizing an ion injection technology;
7) etching cathode regions (N + regions) of the polysilicon LED and the photoelectric detector, namely 4.1 regions, 6.1a regions and 6.1b regions in the figure 2 by using a photoetching technology, shielding anodes (P + regions) of the polysilicon LED and the photoelectric detector, namely 4.2 regions and 6.3 regions in the figure 2, implanting arsenic elements into the 4.1 regions, 6.1a regions and 6.1b regions in the figure 2 by using an ion implantation technology, and removing photoresist on the surface of the wafer;
8) removing the surface oxide generated in the step 6), and then performing electrical activation and diffusion treatment on the N + regions, namely the regions 4.1, 6.1a and 6.1b in the figure 2, and the P + regions, namely the regions 4.2 and 6.3 in the figure 2, which are subjected to ion implantation by using an annealing technology;
9) ti deposition is carried out on the whole wafer surface by utilizing a sputtering process, and then TISi is formed by utilizing a self-aligned silicide process2Then wet etching is carried out to remove the redundant Ti and reserve the TISi2Ohmic contact between Si and metal is formed. The method comprises the steps of utilizing a sputtering process to deposit boron-phosphorus-silicon-glass (BPSG) on the whole surface of a wafer and carrying out chemical mechanical planarization on the surface of the wafer. Then, defining the wiring holes by using a photolithography technique and etching the wiring holes, i.e., 9 and 11 in fig. 3 and 13, 15a and 15b in fig. 4, by using a reactive ion etching technique are performed. Sputtering a layer of TIN on the surface of the contact hole by using a sputtering process, and filling the contact hole with W;
10) and defining a shielding layer of the first layer of metal by utilizing a photoetching technology. And etching the aluminum metal to form a first metal layer structure by using an active ion etching technology. Preparing a first layer of metal as part of the metal light reflecting plate 7;
11) preparing a second layer of metal as a photoelectric detector anode external lead 10 and an LED anode external lead 14 in the same way; the third layer of metal is used as a cathode external lead 12 of the photoelectric detector and an LED cathode external lead 16;
12) then, electroplating pressure welding points, scribing and lead bonding are carried out, and finally the optical interconnection system is packaged on a tube shell to be manufactured.
Those skilled in the art will appreciate that the drawings are only schematic illustrations of preferred embodiments, and the above-described embodiments of the present invention are merely provided for description and do not represent the merits of the embodiments.
The foregoing is only a preferred embodiment of the invention. The invention is not to be considered as limited to the details of the foregoing description, but is to be construed in all aspects and embodiments that are within the spirit and scope of the invention.
Reference documents:
[1] zhang Xingjie, Zhang Shilin, Han Lei, etc. design and realization of novel polysilicon PIN-LED by standard CMOS process [ J ] photoelectron laser, 2013(1):6-10.
[2] Xie Rong, Zhang Xingjie, a new optical interconnection structure based on standard CMOS process, CN203690325U [ P ].2014.
Claims (6)
1. A full waveguide type transverse polysilicon optical interconnection system based on a standard CMOS process comprises a substrate (1), a shallow trench isolation layer (2) and a gate oxide layer (3) which are sequentially arranged from bottom to top, and is characterized in that the upper end surface of the gate oxide layer (3) is provided with SiO2Layer (8), said SiO2The layers (8) have embedded therein: the LED structure comprises an optical interconnection layer positioned at the upper end of the gate oxide layer (3) and a metal light reflection plate (7) positioned above the optical interconnection layer, wherein the optical interconnection layer comprises a first polycrystalline silicon photoelectric detector (4 a), a first polycrystalline silicon optical waveguide (5 a), a polycrystalline silicon LED group (6), a second polycrystalline silicon optical waveguide (5 b) and a second polycrystalline silicon photoelectric detector (4 b) which are sequentially arranged from left to right, and the SiO is formed by a silicon oxide (SiO) layer2The layer (8) is also embedded with a plurality of connecting wire holes for connecting the first polycrystalline silicon photoelectric detector (4 a), the second polycrystalline silicon photoelectric detector (4 b) and the polycrystalline silicon LED group (6) with an external power supply and an external connecting wire penetrating through the connecting wire holes, and the metal light reflecting plate (7) is provided with a wire passing hole or a wire passing groove for penetrating through the external connecting wire.
2. The lateral polysilicon optical interconnection system of claim 1, wherein the first polysilicon photodetector (4 a) and the second polysilicon photodetector (4 b) have the same structure, and each of the first polysilicon photodetector and the second polysilicon photodetector comprises a photodetector cathode (4.1), a photodetector I-region (4.3) and a photodetector anode (4.2) which are sequentially arranged from front to back.
3. The lateral polysilicon optical interconnect system of claim 2, wherein the external leads for the plurality of wire holes and through-wire holes of the first polysilicon photodetector (4 a) and the second polysilicon photodetector (4 b) connected to an external power source comprise: the photoelectric detector comprises a photoelectric detector cathode connecting wire hole (11) vertically formed in the upper end face of a photoelectric detector cathode (4.1), a photoelectric detector cathode external lead (12) penetrating through the photoelectric detector cathode connecting wire hole (11) and connected with the photoelectric detector cathode (4.1), a photoelectric detector anode connecting wire hole (9) vertically formed in the upper end face of a photoelectric detector anode (4.2) and a photoelectric detector anode external lead (10) penetrating through the photoelectric detector anode connecting wire hole (9) and connected with the photoelectric detector anode (4.2).
4. The lateral polysilicon optical interconnection system of claim 1, wherein the polysilicon LED group (6) comprises a first LED cathode (6.1 a), a first LED edi region (6.2 a), an LED anode (6.3), a second LED I region (6.2 b) and a second LED cathode (6.1 b) sequentially arranged from front to back.
5. The lateral poly-si optical interconnect system of claim 4, wherein the external wires for the plurality of wire holes and through wire holes of the poly-si LED group (6) connected to the external power source comprise: the LED cathode connection wire comprises a first LED cathode connection wire hole (15 a) vertically formed in the upper end face of the first LED cathode (6.1 a), a second LED cathode connection wire hole (15 b) vertically formed in the upper end face of the second LED cathode (6.1 b), an LED anode connection wire hole (13) vertically formed in the upper end face of the LED anode (6.3), an LED cathode external connection wire (16) respectively penetrating through the first LED cathode connection wire hole (15 a), the second LED cathode connection wire hole (15 b), the first LED cathode (6.1 a) and the second LED cathode (6.1 b), and an LED anode external connection wire (14) penetrating through the LED anode connection wire hole (13) and connected with the LED anode (6.3).
6. The full waveguide type lateral polysilicon optical interconnection system based on the standard CMOS process as claimed in claim 1, wherein the wire via hole formed on the metal light reflector (7) is a wire via hole (17) located at the center for passing through the LED anode external lead (14), and the wire via grooves formed on the metal light reflector (7) are wire via grooves formed at the edge of the metal light reflector (7) for passing through the photodetector cathode external lead (12), the wire via groove for passing through the photodetector anode external lead (10), and the wire via groove for passing through the LED cathode external lead (16).
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| US9721992B2 (en) * | 2012-11-02 | 2017-08-01 | Osram Oled Gmbh | Organic optoelectronic component with a light emitting element and a light detecting element and method for operating such an organic optoelectronic component |
| CN103762265A (en) * | 2013-12-31 | 2014-04-30 | 天津大学 | Novel optical interconnection structure based on standard CMOS process and manufacturing method thereof |
| CN106653934A (en) * | 2016-10-20 | 2017-05-10 | 天津大学 | Mixed light interconnection system based on standard CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process |
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