CN101777609B - Silica-based forward implantation light-emitting device and manufacturing method thereof - Google Patents
Silica-based forward implantation light-emitting device and manufacturing method thereof Download PDFInfo
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- CN101777609B CN101777609B CN2009100769499A CN200910076949A CN101777609B CN 101777609 B CN101777609 B CN 101777609B CN 2009100769499 A CN2009100769499 A CN 2009100769499A CN 200910076949 A CN200910076949 A CN 200910076949A CN 101777609 B CN101777609 B CN 101777609B
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Abstract
The invention discloses a silica-based forward implantation light-emitting device and a manufacturing method thereof. The device comprises a P-shaped silicon substrate, an N-well, a U-shaped comb structure, a P+ heavy doping active region, an SiO2 gate oxide layer, a polysilicon gate, wherein the N-well is embedded in the P-shaped silicon substrate; the U-shaped comb structure is formed from alternate N+ heavy doping active region and P+ heavy doping active region; the section plane of the U-shaped comb structure is the N+-P+-P+-P+-N+-P+-P+-P+-N+-P+-P+-P+-N+-P+-P+-P+-N+ structure; the U-shaped comb structure is embedded in the N-well; the P+heavy doping active region is positioned on the periphery of the N-well and is embedded in the P-shaped silicon substrate to form a P+substrate contact; the SiO2 gate oxide layer is positioned above among the P+-P+ of the device; the polysilicon gate is positioned on the SiO2 gate oxide layer and has a strip U-shaped structure; the N+heavy doping active region is connected with the cathode by the metal; and the P+heavy doping active region in the well, the polysilicon gate among the P+ and the P+substrate contact outside the N-well are connected with an extraction anode by the metal. The PN junction forward light emitting is realized by utilizing the invention and adopting the P-shaped substrate and the P+heavy doping active region in the N-well to carry out double implantation on the cathode.
Description
Technical field
The present invention relates to technical field of semiconductor device, relate generally to silica-based forward implantation light-emitting device of a kind of and standard CMOS process compatibility and preparation method thereof.
Background technology
Be accompanied by the silicon microelectronic technique and develop towards small size, high integration, high-speed direction, the traditional electrical interconnection problems such as high-transmission time-delay, clock and signal cross-talk can occur inevitably, and its limitation is just remarkable day by day.Become loop (All-SiOEIC) to be expected to solve above-mentioned " bottleneck " that traditional microelectronic technique occurs with the silicon based opto-electronics subclass of standard ic process compatibility; And can make full use of existing ripe integrated circuit technology; Realize extensive the making, therefore have broad application prospects.
Say in principle; There is not too big technical problem aspect the devices such as waveguide, light multichannel beam splitter, optical switch and the modulator of silica-base material in making optoelectronic integrated circuit, photodetector; Current, influence the integrated major obstacle of silicon based optoelectronic devices on luminescent device.As everyone knows, silicon is indirect bandgap material, is again cube high non-polar material of inverting symmetry; The compound transition of the interband of charge carrier will be participated in by means of phonon; Mostly be non-radiation recombination, and the body silicon materials have stronger absorption coefficient for the light that wavelength is lower than 850nm, so luminous power and outer conversion quantum efficiency (ExternalQuantum Efficiency; EQE) all very low, thereby it does not have an excellent specific property of photonic propulsion.Though people constantly explore different approaches realize silicon base luminescence (like porous silicon luminescence, mix that bait silicon is luminous, SiGe/Si or Si/SiO
2Superlattice structure etc.), but most complex manufacturing technology, can not be compatible with standard CMOS process, therefore can't bring into play itself and the single chip integrated advantage of integrated circuit.
At present; With the compatible best device of standard CMOS process be silicon PN junction luminescent device, its luminous wavelength has response speed faster in Si base detector detectable range; Can satisfy the integrated requirement of Si photoelectricity, therefore in silica-based OEIC, good application prospects arranged.PN junction can be luminous with the reverse breakdown situation in the forward injection; More for PN junction reverse bias luminescence studies in the world at present; Though this device can send visible light in room temperature; But luminous efficiency is low, operating voltage higher (being higher than typical CMOS integrated circuit voltage 3.3V), power consumption are bigger, be difficult to satisfy optical signal transmission and with the requirement in typical C MOS circuit common-battery source, this gives, and silicon based opto-electronics is integrated to have caused very big obstacle.
The PN junction forward implantation light-emitting device that the present invention proposes can improve above-mentioned deficiency; Forward luminous low with respect to reverse luminous operating voltage, luminous efficiency is high; Luminous wave band is near infrared band; Has wide application scape more in comparatively approaching with the wavelength 1.3 μ m that optical fiber communication is used, therefore integrated, the optic electric interface circuit at photoelectricity of future generation.Resolve integrated this key issue of silicon based opto-electronics and will make silicon materials obtain important breakthrough, start the brand-new silica-based optical information epoch in field of photoelectric technology.
Summary of the invention
The technical problem that (one) will solve
In view of this, main purpose of the present invention is to provide silica-based forward implantation light-emitting device with the standard CMOS process compatibility and preparation method thereof, to adopt P in P type substrate and the N trap
+The heavy doping active area all carries out dual injection to negative electrode and realizes that the PN junction forward is luminous.
(2) technical scheme
For achieving the above object, the technical scheme that the present invention adopts is following:
A kind of silica-based forward implantation light-emitting device, this device adopt standard CMOS process to realize that this device comprises:
P type silicon substrate 1;
Be embedded in the N trap 2 in this P type silicon substrate 1;
By N
+Heavy doping active area 3 and P
+The U-shaped pectinate texture that heavy doping active area 4 alternately constitutes, this U-shaped pectinate texture section is N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+Structure, be embedded in the N trap 2;
Be positioned at N trap 2 annular P on every side
+Heavy doping active area 4, this P
+Heavy doping active area 4 is embedded in the P type silicon substrate 1, constitutes P
+Substrate contact 5;
Be positioned at device P
+-P
+Between the top SiO
2Gate oxide 8;
Be positioned at this SiO
2Polysilicon gate 6 on the gate oxide 8, this polysilicon gate 6 is the stripe U type structure;
Said N
+Heavy doping active area 3 is connected the P in the said trap through metal 7 with negative electrode
+Heavy doping active area 4, P
+Between polysilicon gate 6 and the P in the N trap outside
+Substrate contact 5 connects through metal 7 draws anode.
In the such scheme, this device anode connects certain positive voltage, when negative electrode connects certain negative voltage, and P in the N trap
+The heavy doping active area is to N
+Negative electrode injects charge carrier, N trap P on every side
+The substrate contact is N in the N trap also
+Negative electrode injects charge carrier and forms substrate and trap P
+The dual injection of heavy doping active area, charge carrier produces compound, and sends the light of peak value near infrared band.
A kind of method of making silica-based forward implantation light-emitting device, this method comprises:
Step 1: choose a P type silicon substrate 1;
Step 2: make a N trap 2 on this P type silicon substrate 1 surface, this N trap 2 is embedded in this P type silicon substrate 1;
Step 3: there is P type silicon substrate 1 surface of N trap 2 to define active area in embedding, and growth SiO
2 Gate oxide 8;
Step 4: at SiO
2Deposit polycrystalline silicon grid layer 6 on the gate oxide 8;
Step 5: bar shaped pectination N is carried out on P type silicon substrate 1 surface being deposited with polycrystalline silicon grid layer 6
+Heavy doping active area 3, P
+Heavy doping active area 4 injects, and forms N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+Structure is being carried out P
+Heavy doping active area 4 forms P when injecting
+Substrate contact 5;
Step 6: utilize standard CMOS process to make passivation and metal interconnected, all N of device
+Heavy doping active area 3 is connected P in all traps through metal 7 with negative electrode
+Heavy doping active area 4, polysilicon gate 6 and N trap 2 outer P
+Substrate contact 5 is connected with anode through metal 7, has constituted the two ends of PN junction.
In the such scheme, this method further comprises:
Step 7: after making device, utilize the electrode metal opening 10 in the CMOS technology that the passivation 9 of device surface is removed, increase the light outgoing of device, this opening also can be used as fiber alignment.
In the such scheme, utilizing standard CMOS process to make passivation described in the step 6, is to adopt standard CMOS process at the transparent passivation layer of this device surface growth.
In the such scheme; This method and standard CMOS process are compatible fully; Said forward injects si-based light-emitting device and can utilize traditional standard CMOS technology on monolithic, to carry out flowing water; Realize that silicon base luminescence and its drive circuit prepare simultaneously, and can be integrated with silicon based opto-electronics sensitive detection parts and receiving circuit monolithic.
(3) beneficial effect
Can find out that from technique scheme silica-based forward implantation light-emitting device that provided by the invention and standard CMOS process are compatible and preparation method thereof has adopted substrate P in N trap and trap
+The heavy doping active area produces the light emission of the near infrared band of low-voltage to the forward injection simultaneously of N trap.This novel silicon base luminescent device adopts the work of PN junction positively biased pattern; Operating voltage reduces; And threshold of luminescence has reduced the absorption of body silicon built in body silicon and polysilicon interface, and light extraction efficiency improves greatly; It adopts industrial standard CMOS technology to realize in integrated circuit of future generation, having boundless application prospect as optic electric interface.
Description of drawings
Fig. 1 is the vertical view of the two implantation light-emitting devices of silica-based forward provided by the invention;
Fig. 2 is the profile of the two implantation light-emitting devices of silica-based forward provided by the invention;
Fig. 3 is the si-based light-emitting device and the cmos circuit monolithic integrated structure sketch map of forward injection way provided by the invention;
Fig. 4 is the method flow diagram of the two implantation light-emitting devices of making silica-based forward provided by the invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
Like Fig. 1, Fig. 2 and shown in Figure 3, this silica-based forward implantation light-emitting device provided by the invention adopts standard CMOS process to realize, comprising:
P type silicon substrate 1;
Be embedded in the N trap 2 in this P type silicon substrate 1;
By N
+Heavy doping active area 3 and P
+The U-shaped pectinate texture that heavy doping active area 4 alternately constitutes, this U-shaped pectinate texture section is N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+Structure, be embedded in the N trap 2;
Be positioned at N trap 2 annular P on every side
+Heavy doping active area 4, this P
+Heavy doping active area 4 is embedded in the P type silicon substrate 1, constitutes P
+Substrate contact 5;
Be positioned at device P
+-P
+Between the top SiO
2Gate oxide 8;
Be positioned at this SiO
2Polysilicon gate 6 on the gate oxide 8, this polysilicon gate 6 is the stripe U type structure;
Said N
+Heavy doping active area 3 is connected the P in the said trap through metal with negative electrode
+Heavy doping active area 4, P
+Between polysilicon gate 6 and the P in the N trap outside
+Substrate contact 5 connects through metal draws anode.
This device anode connects certain positive voltage, when negative electrode connects certain negative voltage, and P in the N trap
+The heavy doping active area is to N
+Negative electrode injects charge carrier, N trap P on every side
+The substrate contact is N in the N trap also
+Negative electrode injects charge carrier and forms substrate and the dual injection of trap; Charge carrier produces compound, and sends the light of peak value near infrared band, adds positive voltage on the polysilicon gate simultaneously; Also charge carrier is adsorbed on the surface of body silicon; Promote the compound of body surface charge carrier, reduced bulk absorption, and then improved light extraction efficiency.
Based on Fig. 1, Fig. 2 and structural representation shown in Figure 3, Fig. 4 shows the method flow diagram that the present invention makes silica-based forward implantation light-emitting device, and the 0.35 μ mCMOS technology that the present invention adopts MPW to provide designs, and this method comprises:
Step 1: choose a P type silicon substrate 1, the doping content of P type silicon substrate 1 is about 5 * 10
14/ cm
3
Step 2: make a N trap 2 on this P type silicon substrate 1 surface, this N trap 2 is embedded in this P type silicon substrate 1, and the doping content of N trap is about 5 * 10
16/ cm
3
Step 3: there is P type silicon substrate 1 surface of N trap 2 to define active area in embedding, and growth SiO
2 Gate oxide 8;
Step 4: at SiO
2Deposit polycrystalline silicon grid layer 6 on the gate oxide 8;
Step 5: bar shaped pectination N is carried out on P type silicon substrate 1 surface being deposited with polycrystalline silicon grid layer 6
+Heavy doping active area 3, P
+Heavy doping active area 4 injects, and forms N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+Structure is being carried out P
+Heavy doping active area 4 forms P when injecting
+Substrate contact 5; N
+The doping content of heavy doping active area 3 is about 5 * 10
19/ cm
3, P
+The doping content of heavy doping active area 4 is about 1 * 10
19/ cm
3
Step 6: utilize standard CMOS process to make passivation and metal interconnected, all N of device
+Heavy doping active area 3 is connected P in all traps through metal 7 with negative electrode
+Heavy doping active area 4, polysilicon gate 6 and N trap 2 outer P
+Substrate contact 5 is connected with anode through metal 7, has constituted the two ends of PN junction; The said standard CMOS process that utilizes is made passivation, is to adopt standard CMOS process at the transparent passivation layer of this device surface growth;
Step 7: after making device, utilize the electrode metal opening 10 in the CMOS technology that the passivation 9 of device surface is removed, increase the light outgoing of device, this opening also can be used as fiber alignment.
This device anode connects certain positive voltage, and " negative electrode " when connecing negative voltage, P in the trap
+Heavy doping active area 4 is to the N that links to each other with negative electrode
+Heavy doping active area 3 injects charge carrier, trap P on every side
+Substrate contact 5 is N in trap also
+Heavy doping active area 3 injects charge carrier, forms P in substrate and the trap
+The heavy doping active area is to the dual injection of N trap, and charge carrier produces compound, and sends the light of peak value near infrared band; Add positive voltage on the polysilicon gate 6 simultaneously, also charge carrier is adsorbed on the surface of body silicon, promoted the compound of body surface charge carrier; Reduce bulk absorption, and then improved light extraction efficiency.This novel silicon base luminescent device adopts the work of PN junction positively biased pattern, and operating voltage reduces, and threshold of luminescence is built in body silicon and SiO
2The absorption of body silicon has been reduced at the interface, and light extraction efficiency improves greatly.
This method and standard CMOS process are compatible fully; Said forward injects si-based light-emitting device and can utilize the traditional CMOS technology of standard on monolithic, to carry out flowing water; Realize that silicon base luminescence and its drive circuit prepare simultaneously; And can be integrated with silicon based opto-electronics sensitive detection parts and receiving circuit monolithic, specifically as shown in Figure 3.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a method of making silica-based forward implantation light-emitting device is characterized in that, this method comprises:
Step 1: choose a P type silicon substrate (1);
Step 2: make a N trap (2) on this P type silicon substrate (1) surface, this N trap (2) is embedded in this P type silicon substrate (1);
Step 3: there is P type silicon substrate (1) surface of N trap (2) to define active area in embedding, and growth SiO
2Gate oxide (8);
Step 4: at SiO
2Gate oxide (8) is gone up deposit polycrystalline silicon grid layer (6);
Step 5: bar shaped pectination N is carried out on P type silicon substrate (1) surface being deposited with polycrystalline silicon grid layer (6)
+Heavy doping active area (3), P
+Heavy doping active area (4) injects, and forms by N
+Heavy doping active area (3) and P
+The U-shaped pectinate texture that heavy doping active area (4) alternately constitutes, this U-shaped pectinate texture section is N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+-P
+-P
+-P
+-N
+Structure, be embedded in the N trap (2); Carrying out P
+When injecting, heavy doping active area (4) forms P
+Substrate contact (5); Wherein, this P
+Substrate contact (5) is formed at N trap (2) on every side, is embedded in the P type silicon substrate (1), constitutes P
+Substrate contact (5);
Step 6: utilize standard CMOS process to make passivation and metal interconnected, all N of device
+Heavy doping active area (3) is connected P in all traps through metal with negative electrode
+Heavy doping active area (4), polysilicon gate (6) and the outer P of N trap (2)
+Substrate contact (5) is connected with anode through metal, has constituted the two ends of PN junction.
2. the method for making silica-based forward implantation light-emitting device according to claim 1 is characterized in that, this method further comprises:
Step 7: after making device, utilize the electrode metal opening (10) in the CMOS technology that the passivation (9) of device surface is removed, increase the light outgoing of device, this opening also can be used as fiber alignment.
3. the method for making silica-based forward implantation light-emitting device according to claim 1 is characterized in that, the doping content of the type of P described in the step 1 silicon substrate (1) is 5 * 10
14/ cm
3
4. the method for making silica-based forward implantation light-emitting device according to claim 1 is characterized in that, N described in the step 5
+The doping content of heavy doping active area (3) is 5 * 10
19/ cm
3, the doping content of P+ heavy doping active area (4) is 1 * 10
19/ cm
3
5. the method for making silica-based forward implantation light-emitting device according to claim 1 is characterized in that, utilizes standard CMOS process to make passivation described in the step 6, is to adopt standard CMOS process at the transparent passivation layer of this device surface growth.
6. the method for making silica-based forward implantation light-emitting device according to claim 1; It is characterized in that; This method and standard CMOS process are compatible fully; Said forward injects si-based light-emitting device and can utilize traditional standard CMOS technology on monolithic, to carry out flowing water, realizes that silicon base luminescence and its drive circuit prepare simultaneously, and can be integrated with silicon based opto-electronics sensitive detection parts and receiving circuit monolithic.
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| CN101777609B true CN101777609B (en) | 2012-01-04 |
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| CN102157600A (en) * | 2011-03-31 | 2011-08-17 | 湘潭大学 | Interdigital ultraviolet enhanced selective silicon photoelectric diode and manufacture method thereof |
| CN103606587B (en) * | 2013-10-23 | 2016-06-08 | 上海华力微电子有限公司 | Photodiode |
| WO2015149226A1 (en) * | 2014-03-31 | 2015-10-08 | 华为技术有限公司 | Doping structure and manufacturing method thereof and electro-optic modulator |
| CN114336270B (en) * | 2020-09-30 | 2023-11-24 | 苏州华太电子技术股份有限公司 | Silicon-based semiconductor laser and manufacturing method thereof |
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|---|---|---|---|---|
| CN101179104A (en) * | 2007-12-12 | 2008-05-14 | 天津工业大学 | Silicon based luminous and detect shared component and composed light interconnection system thereof |
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