CN103811598B - Unsettled resonance photonic device of hafnium oxide of silica-based nitride material and preparation method thereof - Google Patents
Unsettled resonance photonic device of hafnium oxide of silica-based nitride material and preparation method thereof Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 97
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 239000000463 material Substances 0.000 title claims abstract description 46
- 229910000449 hafnium oxide Inorganic materials 0.000 title claims abstract description 40
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 241000588731 Hafnia Species 0.000 claims abstract description 35
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000005516 engineering process Methods 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 7
- 238000012545 processing Methods 0.000 claims abstract description 6
- 230000009467 reduction Effects 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 229910002601 GaN Inorganic materials 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 238000010894 electron beam technology Methods 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 12
- 238000012546 transfer Methods 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 10
- 238000004380 ashing Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 3
- 238000000609 electron-beam lithography Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 claims 7
- 239000002086 nanomaterial Substances 0.000 abstract description 6
- 230000005693 optoelectronics Effects 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 description 2
- 150000002830 nitrogen compounds Chemical class 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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Abstract
Unsettled resonance photonic device of hafnium oxide that the invention discloses a kind of silica-based nitride material and preparation method thereof, realize the hafnia film that carrier is silicon substrate group III-nitride wafer epitaxial growth one deck nanometer grade thickness, comprise layer-of-substrate silicon, be arranged on the nitride layer in layer-of-substrate silicon, and the hafnia film layer of epitaxial growth on nitride layer.Layer-of-substrate silicon has the cuboid cavity that is through to nitride layer lower surface; The overhanging portion that nitride layer is positioned at cavity top carries out reduction processing from its lower surface; The part that nitride layer and hafnia film layer are positioned at cavity top has identical nano-photon device architecture.The invention also discloses a kind of preparation method of the unsettled resonance photonic device of hafnium oxide of silica-based nitride material, this device achieves the reciprocation between exciting light and nanostructure, and be convenient to microelectronic process technology integrated, realize integrated form silicon based opto-electronics subsystem.
Description
Technical field
The invention belongs to information material and devices field, unsettled resonance photonic device of hafnium oxide relating to silica-based nitride material and preparation method thereof.
Background technology
Hafnium oxide material is the material that one has broad-band gap (~ 6eV) and high-k, and laser damage threshold is high, good heat resistance, stable chemical nature, near-infrared and visible light wave range transparent, excellent optical performance.Hafnium oxide material hardness is high, as mask layer, can also be widely used in micro fabrication.
Nitride material, particularly gallium nitride material, have higher refractive index (~ 2.5), near-infrared and visible light wave range transparent, be a kind of optical material of excellent performance, application prospect is extensive.The nitride material of growth on HR-Si substrate, utilizes dark silicon etching technology, can solve the stripping problem of silicon substrate and nitride material, realize unsettled nitride film; Utilize the large refractive index difference between nitride and air, can realize nitride micro-nano photonic device light field being had to very strong restriction, for realizing microminiaturization, highdensity micro-nano photonic device provides physical basis.The present invention utilizes the quantum well structure in nitride and unsettled nitride nano structure, can realize the reciprocation between exciting light and nanostructure, thus development high-performance, novel nitrogen compound film photonic device.
Summary of the invention
technical problem:the invention provides one and can realize reciprocation between exciting light and nanostructure, be convenient to silicon microelectric technique integrated, realize the unsettled resonance photonic device of hafnium oxide of the silica-based nitride material of integrated silicon-based opto-electronic device, a kind of preparation method of this photonic device is provided simultaneously.
technical scheme:the unsettled resonance photonic device of hafnium oxide of silica-based nitride material of the present invention, with silica-based nitride wafer for carrier, comprise layer-of-substrate silicon, be arranged on the nitride layer in layer-of-substrate silicon, the hafnia film layer of epitaxial growth on the upside of nitride layer, nitride layer comprises the resilient coating connected successively from the bottom to top, n-type gallium nitride layer, quantum well layer and p-type gallium nitride layer, the cuboid cavity that one is through to nitride layer lower surface is provided with in layer-of-substrate silicon, the ultra-thin unsettled resonance photonic device structure be positioned at above cuboid cavity is provided with in nitride layer and hafnia film layer, the nano-photon device architecture at two places is identical.
In the unsettled resonance photonic device of hafnium oxide of silica-based nitride material of the present invention, nano-photon device architecture is circular grating structure, two-dimensional photon crystal structure or linear gratings structure.
The method of the unsettled resonance photonic device of hafnium oxide of preparation of the present invention above-mentioned silica-based nitride material, comprises the steps:
(1) epitaxially grown hafnia film layer upper surface spin coating one deck electron beam glue-line on the upside of silica-based nitride wafer, adopts electron beam lithography at electron beam glue-line definition nano-photon device architecture;
(2) ion beam bombardment lithographic technique is adopted to transfer to hafnia film layer by the nano-photon device architecture of definition in step (1) from electron beam glue-line, form hafnium oxide device layer, then oxygen plasma ashing method is utilized to remove remaining electron beam glue-line, in transfer process, hafnia film layer etching is penetrated;
(3) spin coating one deck photoresist layer on hafnium oxide device layer, adopt lithography alignment technology, photoresist layer defines isolation channel, adopt ion beam bombardment lithographic technique that the isolation channel of definition is transferred to hafnium oxide device layer, then oxygen plasma ashing method is utilized to remove residual photoresist, in transfer process, hafnium oxide device layer etching is penetrated;
(4) at upper surface spin coating one deck photoresist layer again of hafnium oxide device layer, in order to protect in step (2) isolation channel transferred in nano-photon device architecture on hafnia film layer and step (3) and transfer on hafnia film layer;
(5) at layer-of-substrate silicon lower surface spin coating one deck photoresist layer of silica-based nitride wafer, utilize technique of alignment behind, the photoresist layer of layer-of-substrate silicon lower surface is opened an etching window; Then using nitride layer as etching barrier layer, utilize dark silicon etching technology, by etching window, layer-of-substrate silicon run through the lower surface being etched to nitride layer, in layer-of-substrate silicon formed a cuboid cavity be positioned at below nitride layer;
(6) by III-V race's material sense coupling technology, nitride layer is positioned at the overhanging portion on cuboid cavity top, upwards reduction processing is carried out from lower surface, realize the ultra-thin unsettled resonance photonic device based on silicon substrate nitride material, then adopt oxygen plasma ashing method to remove remaining photoresist layer;
(7) by III-V race's material sense coupling technology, utilize hafnia film layer as mask, etch downwards from nitride layer upper surface, wear until carve, realize the completely unsettled resonance photonic device of silica-based nitride material.
In preparation method of the present invention, in step (1), the nano-photon device architecture of definition is circular grating structure, two-dimensional photon crystal structure or linear gratings structure.
beneficial effect:the present invention compared with prior art, has the following advantages:
(1) the present invention is the gallium nitride based LED device of growth on silicon materials, and regulate bandwidth that its luminescence peak can be made at 420nm by quantum well, its technology of preparing is convenient to silicon microelectric technique integrated, realizes integrated silicon-based opto-electronic device.
(2) the present invention develops technique behind, and by photoetching technique and dark silicon etching technology, complete etched features underlying silicon substrate material, realizes unsettled device, solves the ABSORPTION AND SCATTERING problem to emergent light of silicon materials.
(3) the present invention is by carrying out unsettled nitride film thinning technique behind, obtains the hafnium oxide resonance photonic device of the adjustable ultrathin silicon based nitride material of thickness, reduces the internal optical losses of thick film nitride material.
(4) in the present invention, used crystal chip top layer is the hafnia film layer of epitaxial growth above nitride layer, it can be utilized as mask layer, solve a difficult problem for nitride processing, by III-V race's material sense coupling technology, obtain completely unsettled resonance photonic device.
(5) adopt photoetching technique to define isolation channel in the present invention, efficiently solve the Stress Release problem that hafnia film layer produces in etching.
(5) in the present invention, used crystal chip nitride layer comprises quantum well structure, can utilize photoluminescent techniques, realizes the reciprocation between exciting light and nanostructure, opens up new approaches for developing novel integrated nitride photonic devices.
Accompanying drawing explanation
Fig. 1 is the structure schematic side view of silica-based nitride wafer epitaxial growth hafnia film layer;
Fig. 2 is the schematic side view of the unsettled resonance photonic device of hafnium oxide of silica-based nitride material of the present invention;
Fig. 3 is preparation technology's flow chart of the unsettled resonance photonic device of hafnium oxide of silica-based nitride material of the present invention.
Have in figure: layer-of-substrate silicon 1, nitride layer 2, resilient coating 21, n-type gallium nitride layer 22, quantum well layer 23, p-type gallium nitride layer, hafnia film layer 3.
Embodiment
Below in conjunction with Figure of description and embodiment, technical scheme of the present invention is described in further detail:
Be illustrated in figure 1 the hierarchy schematic side view of used crystal chip in the present invention, comprise layer-of-substrate silicon 1, the nitride layer 2 be arranged in layer-of-substrate silicon, the hafnia film layer 3 of epitaxial growth on the upside of nitride layer, nitride layer comprises the resilient coating 21, n-type gallium nitride layer 22, quantum well layer 23 and the p-type gallium nitride layer 24 that connect successively from the bottom to top.
Wafer used in the present invention is on the basis of silica-based nitride wafer, utilizes growth technology above nitride layer 2, grown one deck hafnia film layer 3.Hafnium oxide material laser damage threshold is high, stable chemical nature, near-infrared and visible light wave range transparent, excellent optical performance.Further, hafnium oxide hardness is high, and it can be utilized as mask layer, solves a difficult problem for nitride processing, by III-V race's material sense coupling technology, obtains completely unsettled resonance photonic device.
As shown in Figure 2, the unsettled resonance photonic device of hafnium oxide of silica-based nitride material of the present invention, realizing carrier is silicon substrate wafer, comprise layer-of-substrate silicon 1, the nitride layer 2 be arranged in layer-of-substrate silicon, the hafnia film layer 3 of epitaxial growth on the upside of nitride layer, nitride layer comprises the resilient coating 21, n-type gallium nitride layer 22, quantum well layer 23 and the p-type gallium nitride layer 24 that connect successively from the bottom to top.
The cuboid cavity that one is through to nitride layer 2 lower surface is provided with in layer-of-substrate silicon 1, be provided with the ultra-thin unsettled resonance photonic device be positioned at above cuboid cavity in nitride layer 2, the part that nitride layer 2 and hafnia film layer 3 are positioned at cavity top has identical nano-photon device architecture.
In the present invention, nano-photon device architecture is circular grating structure, two-dimensional photon crystal structure or linear gratings structure.
The unsettled resonance photonic device of hafnium oxide of the silica-based nitride material in the present invention, utilizes dark silicon etching technology, solves the stripping problem of layer-of-substrate silicon 1 and nitride layer 2, achieves unsettled resonance photonic device; Utilize III-V race's material sense coupling technology thinning nitride layer 2 from behind further, achieve ultra-thin unsettled resonance photonic device; In addition, utilize the large refractive index difference had between the hafnia film layer 3 of photonic device structure and nitride layer 2 and air, can play very strong restriction to light field, for realizing microminiaturization, highdensity micro-nano photonic device provides physical basis.
Nitride layer 2 in the present invention comprises quantum well layer 23, and the hafnia film layer 3 of top layer has higher laser damage threshold, the optical excitation quantum well of higher-energy can be utilized to realize luminescence generated by light phenomenon, realize the reciprocation between exciting light and nanostructure further, thus development high-performance, novel nitrogen compound film photonic device.
As shown in Figure 3: the method for the unsettled resonance photonic device of hafnium oxide of preparation of the present invention above-mentioned silica-based nitride material, has the silica-based nitride wafer of hafnium oxide thin layer for carrier with upside epitaxial growth, comprise the steps:
(1) epitaxially grown hafnia film layer 3 upper surface spin coating one deck electron beam glue-line on the upside of silica-based nitride wafer, adopts electron beam lithography at electron beam glue-line definition nano-photon device architecture;
(2) ion beam bombardment lithographic technique is adopted to transfer to hafnia film layer 3 by the nano-photon device architecture of definition in step (1) from electron beam glue-line, form hafnium oxide device layer, then oxygen plasma ashing method is utilized to remove remaining electron beam glue-line, in transfer process, hafnia film layer 3 etching is penetrated;
(3) spin coating one deck photoresist layer on hafnium oxide device layer, adopt lithography alignment technology, photoresist layer defines isolation channel, adopt ion beam bombardment lithographic technique that the isolation channel of definition is transferred to hafnium oxide device layer, then oxygen plasma ashing method is utilized to remove residual photoresist, in transfer process, hafnium oxide device layer etching is penetrated;
(4) at upper surface spin coating one deck photoresist layer again of hafnium oxide device layer, in order to protect in step (2) isolation channel transferred in nano-photon device architecture on hafnia film layer 3 and step (3) and transfer on hafnia film layer 3;
(5) at layer-of-substrate silicon 1 lower surface spin coating one deck photoresist layer of silica-based nitride wafer, utilize technique of alignment behind, the photoresist layer of layer-of-substrate silicon 1 lower surface is opened an etching window; Then using nitride layer 2 as etching barrier layer, utilize dark silicon etching technology, by etching window, layer-of-substrate silicon 1 run through the lower surface being etched to nitride layer 2, in layer-of-substrate silicon 1 formed a cuboid cavity be positioned at below nitride layer 2;
(6) by III-V race's material sense coupling technology, nitride layer 2 is positioned at the overhanging portion on cuboid cavity top, upwards reduction processing is carried out from lower surface, realize the ultra-thin unsettled resonance photonic device based on silicon substrate nitride material, then adopt oxygen plasma ashing method to remove remaining photoresist layer;
(7) by III-V race's material sense coupling technology, utilize hafnia film layer 3 as mask, etch downwards from nitride layer 2 upper surface, wear until carve, realize the completely unsettled resonance photonic device of silica-based nitride material.
In the present invention, in step (1), nano-photon device architecture is circular grating structure, two-dimensional photon crystal structure or linear gratings structure.
Claims (4)
1. the unsettled resonance photonic device of the hafnium oxide of a silica-based nitride material, it is characterized in that, this photonic device with silica-based nitride wafer for carrier, comprise layer-of-substrate silicon (1), be arranged on the nitride layer (2) in described layer-of-substrate silicon (1), epitaxial growth is at the hafnia film layer (3) of described nitride layer (2) upside, described nitride layer (2) comprises the resilient coating (21) connected successively from the bottom to top, n-type gallium nitride layer (22), quantum well layer (23) and p-type gallium nitride layer (24), the cuboid cavity that one is through to nitride layer (2) lower surface is provided with in described layer-of-substrate silicon (1), the ultra-thin unsettled resonance nano-photon device architecture be positioned at above described cuboid cavity is provided with in described nitride layer (2) and hafnia film layer (3), the nano-photon device architecture at two places is identical.
2. the unsettled resonance photonic device of the hafnium oxide of silica-based nitride material according to claim 1, is characterized in that, described nano-photon device architecture is circular grating structure, two-dimensional photon crystal structure or linear gratings structure.
3. prepare a method for the unsettled resonance photonic device of hafnium oxide of silica-based nitride material described in claim 1 or 2, it is characterized in that, the method has the silica-based nitride wafer of hafnium oxide thin layer for carrier with upside epitaxial growth, comprises the steps:
(1) epitaxially grown hafnia film layer (3) upper surface spin coating one deck electron beam glue-line on the upside of silica-based nitride wafer, adopts electron beam lithography at described electron beam glue-line definition nano-photon device architecture;
(2) ion beam bombardment lithographic technique is adopted to transfer to hafnia film layer (3) by the nano-photon device architecture of definition in described step (1) from electron beam glue-line, form hafnium oxide device layer, then oxygen plasma ashing method is utilized to remove remaining electron beam glue-line, in described transfer process, hafnia film layer (3) etching is penetrated;
(3) spin coating one deck photoresist layer on described hafnium oxide device layer, adopt lithography alignment technology, described photoresist layer defines isolation channel, adopt ion beam bombardment lithographic technique that the isolation channel of definition is transferred to hafnium oxide device layer, then oxygen plasma ashing method is utilized to remove residual photoresist, in described transfer process, hafnium oxide device layer etching is penetrated;
(4) at upper surface spin coating one deck photoresist layer again of described hafnium oxide device layer, in order to protect in step (2) isolation channel transferred in nano-photon device architecture on hafnia film layer (3) and step (3) and transfer on hafnia film layer (3);
(5) at layer-of-substrate silicon (1) lower surface spin coating one deck photoresist layer of silica-based nitride wafer, utilize technique of alignment behind, the photoresist layer of layer-of-substrate silicon (1) lower surface is opened an etching window; Then using nitride layer (2) as etching barrier layer, utilize dark silicon etching technology, by etching window, described layer-of-substrate silicon (1) is run through the lower surface being etched to nitride layer (2), in layer-of-substrate silicon (1), form the cuboid cavity that is positioned at nitride layer (2) below;
(6) by III-V race's material sense coupling technology, nitride layer (2) is positioned at the overhanging portion on described cuboid cavity top, upwards reduction processing is carried out from lower surface, realize the ultra-thin unsettled resonance photonic device structure based on silicon substrate nitride material, then adopt oxygen plasma ashing method to remove remaining photoresist;
(7) by III-V race's material sense coupling technology, utilize hafnia film layer (3) as mask, etch downwards from nitride layer (2) upper surface, wear until carve, realize the completely unsettled resonance photonic device of silica-based nitride material.
4. the preparation method of the unsettled resonance photonic device of the hafnium oxide of silica-based nitride material according to claim 3, it is characterized in that, in described step (1), the nano-photon device architecture of definition is circular grating structure, two-dimensional photon crystal structure or linear gratings structure.
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| CN106896436A (en) * | 2017-02-24 | 2017-06-27 | 南京大学 | Color filter and preparation method based on the coupling silicon nitride film waveguide of aluminium grating |
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| CN108233181B (en) * | 2017-12-28 | 2019-12-24 | 南京邮电大学 | Suspended GaN thin film laser integrated with resonant grating microcavity and preparation method thereof |
| CN110212078B (en) * | 2019-06-14 | 2020-10-27 | 厦门大学 | Electric injection microdisk resonant cavity light-emitting device and preparation method thereof |
| CN111641108B (en) * | 2020-05-29 | 2021-09-24 | 南京邮电大学 | Silicon-based suspended photonic crystal surface-emitting type blue laser and preparation method thereof |
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| CN102530821A (en) * | 2011-12-26 | 2012-07-04 | 南京邮电大学 | Suspending resonant photonic device based on silicon substrate nitride material and preparation method for same |
| CN103048715A (en) * | 2013-01-04 | 2013-04-17 | 南京邮电大学 | Planar sub-wavelength aperiodic high-contrast grating and preparation method thereof |
| CN103185918A (en) * | 2013-03-18 | 2013-07-03 | 南京邮电大学 | Micro-electro-mechanical adjustable nitride resonant grating and preparation method thereof |
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| CN102530821A (en) * | 2011-12-26 | 2012-07-04 | 南京邮电大学 | Suspending resonant photonic device based on silicon substrate nitride material and preparation method for same |
| CN103048715A (en) * | 2013-01-04 | 2013-04-17 | 南京邮电大学 | Planar sub-wavelength aperiodic high-contrast grating and preparation method thereof |
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