CN105610047B - GeSn multiple quantum wells metal cavity lasers and preparation method thereof - Google Patents
GeSn multiple quantum wells metal cavity lasers and preparation method thereof Download PDFInfo
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- CN105610047B CN105610047B CN201610029805.8A CN201610029805A CN105610047B CN 105610047 B CN105610047 B CN 105610047B CN 201610029805 A CN201610029805 A CN 201610029805A CN 105610047 B CN105610047 B CN 105610047B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3027—IV compounds
- H01S5/3031—Si
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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Abstract
The invention discloses a kind of GeSn multiple quantum wells metal cavity laser, including Si substrates and Ge buffer layers, lower distribution Bragg reflector, active layer, upper distribution Bragg reflector and Ge on a si substrate are set from bottom to top0.88Sn0.12Buffer layer, active layer use strain-compensated quantum well structure, Ge0.88Sn0.12Buffer layer, upper distribution Bragg reflector, active layer and lower distribution Bragg reflector are etched into cylindrical mesa, and the side of cylindrical mesa and the growth of lower distribution Bragg reflector surface have silicon nitride film, the Ge0.88Sn0.12It is coated with Ag metal layers on buffer layer and silicon nitride film surface.The present invention can either CMOS technique compatible, and stress intensity can be changed by adjusting the size of Sn components to realize demand of the germanium tin light source to different wavelengths of light, and there is higher photoelectric conversion efficiency and photostability, processing is simple, conveniently.
Description
Technical field
The invention belongs to Semiconductor Optic Electronics technical field more particularly to a kind of GeSn multiple quantum wells metal cavity lasers
And preparation method thereof.
Background technology
Si base semiconductors are the foundation stone of modern microelectronic industry, the complementary metal oxide semiconductor of Si
(complementary mental oxide semiconductor, CMOS) technology formd one it is powerful micro-
Electronic industry.With advances in technology, Si basis sets are higher and higher at circuit level, and performance is become better and better.But with integrated level
Continuous improvement, the reduction of device feature size, a series of problems also generates therewith, such as heat dissipation problem is serious, electricity interconnection
Power consumption is big, RC retardation ratio leads to that electric interconnection speeds are limited, the quantum limitation effect etc. under small size, all limit integrated circuit into
One step develops.To realize that Si base photoelectricity integrates the Si that (optoelectronic integrated circuit, OEIC) is target
Based optoelectronics (silicon photonics) are expected to solve this problem.Regrettably Si itself does not have good optics
Characteristic, in the defect that opto-electronic conversion, Electro-optical Modulation, electro-optic conversion etc. have itself intrinsic, for example carrier mobility is low, tool
There are high symmetry structure, linear electro-optic coefficient zero, indirect bandgap material, luminous efficiency low.But for over ten years, pass through
The joint efforts of scientists, Si base photonic propulsions have been achieved for remarkable progress, the preparation of various Si bases photonics materials and device
The making of part all achieves gratifying breakthrough.At present other than Si base light sources, people are in Si bases photodetector, Electro-optical Modulation
Device, Wavelength division multiplexer/demultiplexer field have ripe application.Thus efficient Si base light sources, especially Si base lasers, at
Most to be challenged in Si bases OEIC, be also most important target.
Currently, to Si bases light source, there are one ripe effective solution schemes.Realize that Si materials itself do light emitting source,
It need to inhibit non-radiative recombination by the methods of material modification, energy band engineering, improve radiation recombination probability, such as Si dislocation rings hair
The methods of light, Si Ramar lasers, doping with rare-earth ions.But these methods or complex process, repeated stability is poor,
Or optical pumping running, it is smaller to the contribution of Si base optical interconnections, it is also necessary to further innovation.In addition, can be good by luminescent properties
III-V material be integrated on Si, realize Si base High Efficiency Luminescences.However the technique of iii-v and Si CMOS technology compatibility
Difference, therefore it is unfavorable for OEIC.
Germanium tin alloy is a kind of IV races semi-conducting material of greatest concern in recent years, wide with Si, Ge, GeSi alloy etc.
The IV races semi-conducting material with indirect band gap of general research is different, and GeSn alloy will have direct when Sn contents are more than 10%
Band gap is unique IV races bianry alloy semiconductor with direct band gap, this so that it is efficient in silicon electronics especially Si bases
Illuminating source has very important research significance, becomes a new research hotspot in recent years.Although low (the ＜ of Sn comparision contents
10%) when, GeSn alloy is indirect band gap, but the GeSn alloy of low Sn components also has important research significance.GeSn
Alloy has the absorption coefficient than Ge bigger, and the introducing of Sn will make ABSORPTION EDGE red shift, while it or a kind of narrow band gap material
Material, band gap is 0 to adjustable between 0.66eV.The band gap of germanium tin alloy is reduced with the increase of Sn contents, optical absorption edge by
Gradually red shift, D ' Costa's etc. the result shows that, even if Sn contents are enough to cover full communication wave band if being only 0.02 germanium tin alloy, and
And be expected to be used for infrared optoelectronic device at least than 10 times of Ge high in the absorption coefficient of the wave band, be applied to infrared acquisition at
In the fields such as picture.Compared with traditional infrared optoelectronic material (such as HgCdTe), Ge1-xSnxAlloy has nontoxic, pollution-free
The advantages that, but also it is compatible with silicon microelectronic technique, it is easily integrated.So Ge1-xSnxDevelopment of the alloy in Infrared Opto-electronics
There is important meaning.In addition, germanium tin alloy has larger electrons and holes mobility, can be used to make high-performance microelectronics
Device, this makes this material be suitable as the channel material of high-speed cmos.
Currently, the Laser Study based on germanium tin material still in the primary stage, delivered both at home and abroad based on germanium tin material
Expect the shortcomings of laser still has photoelectric conversion efficiency low, and photostability is bad, and can only be come at present using pulse optical pumping real
Existing lasing, suitable electric pumping mode need to be found；The critical-temperature of GeSn alloy lasing is relatively low, and distance realizes room-temperature applications
Also certain distance.
Invention content
The purpose of the present invention is to provide a kind of GeSn multiple quantum wells metal cavity lasers and preparation method thereof, it is intended to solve
The prior art has the shortcomings that thermal diffusivity is poor, photostability is poor using the wire chamber laser device of III-V material, still without
The problem of method meets requirement of the on piece photoelectricity integrated system to light source, and germanium tin laser is difficult to realize room temperature electrical pumping.
The invention is realized in this way a kind of GeSn multiple quantum wells metal cavity laser, including Si substrates and from lower and
Upper setting Ge buffer layers on a si substrate, lower distribution Bragg reflector, active layer, upper distribution Bragg reflector and
Ge0.88Sn0.12Buffer layer, the active layer use strain-compensated quantum well structure, the Ge0.88Sn0.12Buffer layer, upper distribution
Bragg mirror, active layer and lower distribution Bragg reflector are etched into cylindrical mesa, the side of cylindrical mesa and
The growth of lower distribution Bragg reflector surface has silicon nitride film, the Ge0.88Sn0.12On buffer layer and silicon nitride film surface
It is coated with Ag metal layers.
The features of the present invention also characterized in that GeSn potential well and corresponding 13 layer tensile strain of the active layer by 12 lamination strains
SiGeSn potential barriers form.
The features of the present invention also characterized in that lower distribution Bragg reflector is by 24.5 couples of SiaGebSnc/SixGeySnzMaterial
The alternately N-shaped distributed bragg reflector mirror of composition, the upper distribution Bragg reflector is by 8.5 couples of SiaGebSnc/
SixGeySnzMaterial replaces the p-type distributed bragg reflector mirror of composition, reflection wavelength centered on the optical thickness per layer material
0.3, x+y+z=1, the 0 ＜ x ＜ of ＜ a ＜ 0.1,0 ＜ b ＜, 0.8,0 ＜ c ＜ of 1/4, wherein a+b+c=1,0,0.8,0 ＜ y ＜
0.12,0 ＜ z ＜ 0.3.
The features of the present invention also characterized in that the etching depth of cylindrical mesa is until lower distribution Bragg reflector upper end, circle
The height of cylindricality table top is 3.5 μm, and the radius of cylindrical mesa is 1 μm.
The production method of above-mentioned GeSn multiple quantum wells metal cavity laser includes the following steps：
Step 1 utilizes low temperature molecular beam epitaxy method to grow one layer of Ge film on a si substrate, as Ge buffer layers；
Step 2, on Ge buffer layers successively grow under distribution Bragg reflector, active layer, upper distributed Blatt reflective
Mirror and deformation relaxation Ge0.88Sn0.12Buffer layer；
Step 3, the lower distribution Bragg reflector that step 2 is obtained, active layer, upper distribution Bragg reflector and strain
Relaxation Ge0.88Sn0.12Buffer layer is etched into cylindrical mesa；
Step 4 is sunk in the side of cylindrical mesa and lower distribution Bragg reflector surface using low pressure chemical phase
Area method grown silicon nitride film；
Step 5, in Ge0.88Sn0.12Buffer layer and silicon nitride film surface apply Ag, form Ag metal layers.
Beneficial effects of the present invention are as follows：
The wire chamber laser device thermal diffusivity of III-V material is poor, light is steady for using in the prior art by the present invention
The shortcomings of qualitative difference, it still cannot be satisfied requirement of the on piece photoelectricity integrated system to light source, it is proposed that a kind of column with wire chamber
The laser device and preparation method thereof of the GeSn multiple quantum wells of shape structure.The present invention can either CMOS technique compatible, and can
Change stress intensity to realize demand of the germanium tin light source to different wavelengths of light, and with higher by adjusting the size of Sn components
Photoelectric conversion efficiency and photostability, processing is simply, conveniently.
Description of the drawings
Fig. 1 is the structural schematic diagram of GeSn multiple quantum wells metal cavity lasers of the embodiment of the present invention；
Fig. 2 illustrates for the processing of step 1 in the production method of GeSn multiple quantum wells metal cavity lasers of the embodiment of the present invention
Figure；
Fig. 3 illustrates for the processing of step 2 in the production method of GeSn multiple quantum wells metal cavity lasers of the embodiment of the present invention
Figure；
Fig. 4 illustrates for the processing of step 3 in the production method of GeSn multiple quantum wells metal cavity lasers of the embodiment of the present invention
Figure；
Fig. 5 illustrates for the processing of step 4 in the production method of GeSn multiple quantum wells metal cavity lasers of the embodiment of the present invention
Figure；
Fig. 6 illustrates for the processing of step 5 in the production method of GeSn multiple quantum wells metal cavity lasers of the embodiment of the present invention
Figure；
In figure：1, Si substrates；2, Ge buffer layers；3, lower distribution Bragg reflector；4, active layer；5, upper distribution bragg
Speculum, 6, Ge0.88Sn0.12Buffer layer, 7, silicon nitride film, 8, Ag metal layers.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, right below in conjunction with drawings and examples
The present invention is further elaborated.
Fig. 1 shows the structure of GeSn multiple quantum wells metal cavity laser provided in an embodiment of the present invention.As shown in Figure 1,
A kind of GeSn multiple quantum wells metal cavity laser of the embodiment of the present invention, including Si substrates 1 and be arranged from bottom to top Si serve as a contrast
Ge buffer layers 2, lower distribution Bragg reflector 3, active layer 4, upper distribution Bragg reflector 5 on bottom 1 and Ge0.88Sn0.12It is slow
Layer 6 is rushed, active layer 4 uses strain-compensated quantum well structure, Ge0.88Sn0.12It is buffer layer 6, upper distribution Bragg reflector 5, active
Layer 4 and lower distribution Bragg reflector 3 are etched into cylindrical mesa, the side of cylindrical mesa and lower distributed Blatt reflective
The growth of 3 surface of mirror has silicon nitride film 7, Ge0.88Sn0.12Buffer layer 6 and silicon nitride film are coated with Ag metal layers 8 on 7 surface.By
It is all very high in the thermal conductivity and reflectivity of silver, therefore wire chamber is done with Ag metals, it is more advantageous to heat dissipation, while having preferably
Light reflectivity, it is more advantageous to forming laser.
In embodiments of the present invention, GeSn potential well and corresponding 13 layer tensile strain of the active layer 4 by 12 lamination strains
SiGeSn potential barriers form.Quantum well structure can effectively limiting carrier, improve the carrier injection of material and luminous effect
Rate, rational SiGeSn/GeSn/SiGeSn multi-quantum pit structures, is advantageously implemented High Efficiency Luminescence.
In embodiments of the present invention, lower distribution Bragg reflector 3 is by 24.5 couples of SiaGebSnc/SixGeySnzMaterial is handed over
For the N-shaped distributed bragg reflector mirror of composition, upper distribution Bragg reflector 5 is by 8.5 couples of SiaGebSnc/SixGeySnzMaterial
Expect the p-type distributed bragg reflector mirror alternately formed, the 1/4 of reflection wavelength, wherein a centered on the optical thickness per layer material
0.1,0 ＜ b ＜ 0.8 of+b+c=1,0 ＜ a ＜, 0 ＜ c ＜, 0.3, x+y+z=1,0 ＜ x ＜ 0.8,0 ＜ y ＜, 0.12,0 ＜ z ＜
0.3.Since the electromagnetic wave that frequency is fallen within the scope of energy gap can not penetrate, the reflectivity of Bragg mirror is up to 99% or more.
Meanwhile the structure does not have the absorption problem of metallic mirror, and energy can be adjusted by changing refractive index or the thickness of material
Gap position.
In embodiments of the present invention, the etching depth of cylindrical mesa is until lower distribution Bragg reflector upper end, cylinder
The height of shape table top is 3.5 μm, and the radius of cylindrical mesa is 1 μm.
The production method of above-mentioned GeSn multiple quantum wells metal cavity laser, can carry out, specifically according to mode shown in Fig. 2-Fig. 6
Include the following steps：
Step 1 utilizes low temperature molecular beam epitaxy method to grow one layer of Ge film on a si substrate, and as Ge buffer layers, Ge is slow
The thickness for rushing layer is 240nm；In embodiments of the present invention, using low and high temperature two-step method, first 250 DEG C of growths one on a si substrate
After layer low temperature germanium buffer layer, it is warming up to 500 DEG C of growth high temperature germanium buffer layers.
Step 2, on Ge buffer layers successively grow under distribution Bragg reflector, active layer, upper distributed Blatt reflective
Mirror and deformation relaxation Ge0.88Sn0.12Buffer layer.
Step 3, the lower distribution Bragg reflector that step 2 is obtained, active layer, upper distribution Bragg reflector and strain
Relaxation Ge0.88Sn0.12Buffer layer is etched into cylindrical mesa.
Step 4 is sunk in the side of cylindrical mesa and lower distribution Bragg reflector surface using low pressure chemical phase
Area method grown silicon nitride film.
Step 5, in Ge0.88Sn0.12Buffer layer and silicon nitride film surface apply Ag, form Ag metal layers.
In embodiments of the present invention, the upper and lower distributed bragg reflector mirror in step 2 is different by two kinds of refractive index
Material is with SiaGebSnc/SixGeySnz(ABAB) mode is alternately arranged the periodic structure of composition, the optical thickness per layer material
Centered on reflection wavelength 1/4.
In embodiments of the present invention, the active layer in step 2 is 25 layers of multiple quantum wells, i.e., the GeSn potential wells of 12 lamination strains
Thickness with the SiGeSn potential barriers of 13 layers of tensile strain, every layer of potential well is 6nm, and the thickness of every layer of potential barrier is 8nm.It is balanced based on strain
Under the conditions of, it minimizes total strain energy, and misfit dislocation density is strained to reduce the area multiple quantum wells (MQWs)；In addition, making
Mirror image transmission and metal loss can be offset with MQWs structures, to obtain sufficiently large optical gain.
In embodiments of the present invention, the deformation relaxation Ge in step 20.88Sn0.12The growing method of buffer layer is using low temperature point
Beamlet epitaxy, growth temperature are 200 DEG C, thickness 300nm.
In embodiments of the present invention, lithographic method is in step 3：With silicon nitride (Si3N4) round mask determines photoetching area
Domain forms cylinder using the method for plasma/reactive ion etching (PE/RIE) of inductive coupling, then etches away as covering
The Si of film3N4, wherein the silicon nitride film is the high stress film suitable for straining GeSn devices, it is used as anisotropic etch
When protect figure mask.Round mask is raw using LPCVD (Low Pressure Chemical Vapor Deposition) under the conditions of low pressure, 700 DEG C
Long, radius is 1 μm.Step 3 intermediate ion etching etching agent used can be the mixed solution of potassium hydroxide and isopropanol, be formulated as hydrogen
Potassium oxide: isopropanol: water=1: 2: 2,80 DEG C of etching temperature, the general 90min of etch period, it is 3.5 μ to be formed by height of column
m；Use the mixed liquor of hydrofluoric acid and phosphoric acid etching as the Si of mask under the conditions of 180 DEG C3N4。
In embodiments of the present invention, the growth of silicon nitride film uses Low Pressure Chemical Vapor Deposition in step 4.Step 4
In silicon nitride film thickness be 10nm.
In embodiments of the present invention, Ag metal layers coated in step 5 are column, are made of evaporation of metal technique,
Deposition rate is 0.18nm/s.
The Ge films grown in the present embodiment grow the buffer layer of GeSn alloy as subsequent step, can reduce extension mistake
Match, improves GeSn alloy quality.Distributed bragg reflector mirror (DBRs) therein is a part for optical microcavity, is by two kinds
The different material of refractive index is with SiaGebSnc/SixGeySnz(ABAB) mode is alternately arranged the periodic structure of composition, every layer of material
The 1/4 of reflection wavelength centered on the optical thickness of material.Since the electromagnetic wave that frequency is fallen within the scope of energy gap can not penetrate, Prague
The reflectivity of speculum is up to 99% or more.Meanwhile the structure does not have the absorption problem of metallic mirror, and change can be passed through
The refractive index of material or thickness adjust energy gap position.Being used as using the multiple quantum wells medium of GeSn/SiGeSn alternating growths is had
Source region introduces compression in GeSn materials, tensile strain is introduced in SiGeSn, increases active area optical gain to improve metal
The luminous efficiency of cavity laser device.It can separately adjust the stress intensity of each layer according to demand by adjusting the size of Sn components, carry
High-photoelectric transformation efficiency and the GeSn/SiGeSn multiple quantum well laser devices for preparing specific wavelength of light.Due to the heat conduction of silver
Rate and reflectivity are all very high, therefore do wire chamber with Ag metals, are more advantageous to heat dissipation, while having better light reflectivity,
It is more advantageous to forming laser.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (4)
1. a kind of GeSn multiple quantum wells metal cavity laser, which is characterized in that be arranged including Si substrates and from bottom to top in Si
Ge buffer layers, lower distribution Bragg reflector, active layer, upper distribution Bragg reflector on substrate and Ge0.88Sn0.12Buffering
Layer, the active layer use strain-compensated quantum well structure, the Ge0.88Sn0.12Buffer layer, has upper distribution Bragg reflector
Active layer and lower distribution Bragg reflector are etched into cylindrical mesa, the side of cylindrical mesa and lower distributed Blatt reflective
The growth of mirror surface has silicon nitride film, the Ge0.88Sn0.12It is coated with Ag metal layers on buffer layer and silicon nitride mask surface；It is described
Lower distribution Bragg reflector is by 24.5 couples of SiaGebSnc/SixGeySnzThe N-shaped distributed Bragg that material alternately forms is anti-
Mirror is penetrated, the upper distribution Bragg reflector is by 8.5 couples of SiaGebSnc/SixGeySnzThe p-type that material alternately forms is distributed
Bragg mirror, per layer material optical thickness centered on reflection wavelength 0.1,0 ＜ of the ＜ a ＜ of 1/4, wherein a+b+c=1,0
0.8,0 ＜ y ＜ of b ＜ 0.8,0 ＜ c ＜, 0.3, x+y+z=1,0 ＜ x ＜, 0.12,0 ＜ z ＜ 0.3.
2. GeSn multiple quantum wells metal cavity laser as described in claim 1, which is characterized in that the active layer is by 12 laminations
The GeSn potential wells of strain and corresponding 13 layers of tensile strain SiGeSn potential barriers composition.
3. GeSn multiple quantum wells metal cavity laser as described in claim 1, which is characterized in that the quarter of the cylindrical mesa
Depth is lost until lower distribution Bragg reflector upper end, the height of cylindrical mesa is 3.5 μm, and the radius of cylindrical mesa is 1 μ
m。
4. the production method of GeSn multiple quantum wells metal cavity laser as described in claim 1-3 is any, which is characterized in that including
Following steps：
Step 1 utilizes low temperature molecular beam epitaxy method to grow one layer of Ge film on a si substrate, as Ge buffer layers；
Step 2, on Ge buffer layers successively grow under distribution Bragg reflector, active layer, upper distribution Bragg reflector and
Deformation relaxation Ge0.88Sn0.12Buffer layer；
Step 3, the lower distribution Bragg reflector that step 2 is obtained, active layer, upper distribution Bragg reflector and deformation relaxation
Ge0.88Sn0.12Buffer layer is etched into cylindrical mesa；
Step 4 utilizes Low Pressure Chemical Vapor Deposition in the side of cylindrical mesa and lower distribution Bragg reflector surface
Grown silicon nitride film；
Step 5, in Ge0.88Sn0.12Buffer layer and silicon nitride film surface apply Ag, form Ag metal layers.
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| CN107785368A (en) * | 2016-08-25 | 2018-03-09 | 西安电子科技大学 | Strain GeSnMOS devices and preparation method thereof, integrated circuit and computer |
| CN107069430B (en) * | 2017-04-18 | 2019-07-05 | 中国科学院半导体研究所 | Silicon substrate electrical injection laser and preparation method thereof |
| CN107342535B (en) * | 2017-06-20 | 2019-05-31 | 西安电子科技大学 | Strained multiple quantum well laser and preparation method thereof based on GeSn/SiGeSn material |
| CN109244829B (en) * | 2018-09-17 | 2020-02-14 | 西安电子科技大学 | Ge/GeSn heterojunction laser and preparation method thereof |
| CN109343237B (en) * | 2018-12-14 | 2020-05-19 | 华中科技大学 | Germanium-silicon quantum well electro-refraction rate modulator and integrated optoelectronic device |
| CN115394884A (en) * | 2021-05-21 | 2022-11-25 | 深圳第三代半导体研究院 | Light emitting diode and method for manufacturing light emitting diode |
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