CN105610047A - GeSn multi-quantum well metal cavity laser and fabrication method thereof - Google Patents
GeSn multi-quantum well metal cavity laser and fabrication method thereof Download PDFInfo
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- CN105610047A CN105610047A CN201610029805.8A CN201610029805A CN105610047A CN 105610047 A CN105610047 A CN 105610047A CN 201610029805 A CN201610029805 A CN 201610029805A CN 105610047 A CN105610047 A CN 105610047A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3027—IV compounds
- H01S5/3031—Si
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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Abstract
The invention discloses a GeSn multi-quantum well metal cavity laser. The GeSn multi-quantum well metal cavity laser comprises an Si substrate and a Ge buffer layer, a lower distributed Bragg reflection mirror, an active layer, an upper distributed Bragg reflection mirror and a Ge<0.88>Sn<0.12> buffer layer which are arranged on the Si substrate from bottom to top, the active layer adopts a strain compensation quantum well structure, the Ge<0.88>Sn<0.12> buffer layer, the upper distributed Bragg reflection mirror, the active layer and the lower distributed Bragg reflection mirror are etched to a cylindrical tabletop, a silicon nitride thin film is grown on the side surface of the cylindrical tabletop and the surface of the lower distributed Bragg reflection mirror, and the surfaces of the Ge<0.88>Sn<0.12> buffer layer and the silicon nitride thin film are coated with an Ag metal layer. The GeSn multi-quantum well metal cavity laser can be compatible with a complementary metal oxide semiconductor (CMOS) process, and the stress size also can be changed by adjusting Sn constituent so as to achieve the demand of a germanium tin light source on different wavelength light; and moreover, the GeSn multi-quantum well metal cavity laser has the advantages of relatively high photoelectric conversion efficiency and light stability, and is simple and convenient to process.
Description
Technical field
The invention belongs to Semiconductor Optic Electronics technical field, relate in particular to a kind of GeSn MQW metalCavity laser and preparation method thereof.
Background technology
Si base semiconductor is the foundation stone of modern microelectronic industry, the complementary metal oxide semiconductors (CMOS) of Si(complementarymentaloxidesemiconductor, CMOS) technology has formed onePowerful microelectronic industry. Along with the progress of technology, Si basis set becomes circuit level more and more higher, and performance moreIt is better to come. But along with improving constantly of integrated level, the reducing of device feature size, series of problems is also thereuponProduce, power consumption that for example heat dissipation problem is serious, electricity is interconnected is large, RC postpone to cause electric interconnect speeds limited,Quantum limitation effects under small size etc., are all limiting further developing of integrated circuit. To realize Si base lightSi based optoelectronics (the silicon that electricity integrated (optoelectronicintegratedcircuit, OEIC) is targetPhotonics) be expected to solve this difficult problem. Regrettably Si itself does not possess good optical characteristics, at lightThere is self intrinsic defect the aspects such as electricity conversion, Electro-optical Modulation, electric light conversion, such as carrier mobility is low,There is high symmetry structure, linear electro-optic coefficient and be zero, indirect bandgap material, luminous efficiency be low. But,For over ten years, through the joint efforts of scientists, Si base photonic propulsion has made great progress, variousThe preparation of Si base photonics material and the making of device have all obtained gratifying breakthrough. At present except Si base light sourceOutward, people have maturation in Si base photodetector, electrooptic modulator, Wavelength division multiplexer/demultiplexer fieldApplication. Thereby efficiently Si base light source, particularly Si base laser, become in Si base OEIC toolChallenge, be also most important target.
At present, to a not effective solution of maturation of Si base light source. Realizing Si material itself doesLight emitting source, needs to suppress non-radiative compound by methods such as material modification, energy band engineerings, improves radiation recombination generalRate, such as methods such as Si dislocation ring is luminous, Si Ramar laser, doping with rare-earth ions. But these methodsOr complex process, repeated less stable, or optical pumping running, to the contribution of Si base optical interconnectionLittle, also need further innovation. In addition, III-V family material good luminescent properties can be integrated in to Si upper,Realize Si base High Efficiency Luminescence. But the technique of III-V family and SiCMOS processing compatibility are poor, therefore unfavorableIn OEIC.
Germanium ashbury metal is of greatest concern a kind of IV family semi-conducting material in recent years, closes with Si, Ge, GeSiThe IV family semi-conducting material difference with indirect band gap that gold etc. has been widely studied, GeSn alloy is worked as SnWhen content is greater than 10%, will have direct band gap, be that unique IV family bianry alloy with direct band gap is partly ledBody, this makes it have very important Research Significance at silicon electronics especially Si base High Efficiency Luminescence light source,Become a new study hotspot in recent years. Although when Sn content lower (< 10%), between GeSn alloy isTape splicing gap, but the GeSn alloy of low Sn component also has important Research Significance. GeSn alloy toolHave the absorption coefficient larger than Ge, and the introducing of Sn will make ABSORPTION EDGE red shift, simultaneously it or a kind of narrowBand gap material, band gap is adjustable between 0 to 0.66eV. The band gap of germanium ashbury metal is with the increase of Sn contentReduce, the red shift gradually of its optical absorption edge, the result of D ' Costa etc. shows, even if Sn content is only 0.02,Germanium ashbury metal is also enough to cover full communication wave band, and at least high 10 times than Ge at the absorption coefficient of this wave band,Be expected to be used to infrared optoelectronic device, be applied in the fields such as infrared detection image. With traditional infrared lightElectronic material (such as HgCdTe) is compared, Ge1-xSnxAlloy has the advantages such as nontoxic, pollution-free, andAlso, with silicon microelectronic technique compatibility, be easy to integrated. So, Ge1-xSnxAlloy is in the development of Infrared Opto-electronicsThere is important meaning. In addition, germanium ashbury metal has larger electronics and hole mobility, can be used to make highPerformance microelectronics device, this makes this material be suitable as the channel material of high-speed cmos.
At present, the Laser Study based on germanium tin material is still in the junior stage, domestic and international delivered based onThe shortcomings such as it is low that germanium tin material laser instrument still has photoelectric transformation efficiency, and photostability is bad, and can only make at presentRealize swashing with pulsed light pumping and penetrate, suitable electric pumping mode need to find; GeSn alloy swashs facing of penetratingBoundary's temperature is lower, and distance realizes room-temperature applications and also has certain distance.
Summary of the invention
The object of the present invention is to provide a kind of GeSn MQW wire chamber laser instrument and preparation method thereof,Be intended to solve wire chamber laser device that prior art adopts III-V family material and have that thermal diffusivity is poor, light is steadyThe shortcomings such as qualitative difference, still cannot meet the requirement of sheet glazing electricity integrated system to light source, and germanium tin laser instrument difficultyThe problem of injecting to realize room temperature electricity.
The present invention is achieved in that a kind of GeSn MQW wire chamber laser instrument, comprise Si substrate,And be arranged on from bottom to top the Ge cushion on Si substrate, lower distribution Bragg reflector, active layer,Upper distribution Bragg reflector and Ge0.88Sn0.12Cushion, described active layer adopts strain-compensated quantum well knotStructure, described Ge0.88Sn0.12Cushion, upper distribution Bragg reflector, active layer and lower distribution bragg are anti-Penetrate mirror and be etched into cylindrical mesa, the side of cylindrical mesa and lower distribution Bragg reflector superficial growthThere is silicon nitride film, described Ge0.88Sn0.12On cushion and silicon nitride film surface, scribble Ag metal level.
Feature of the present invention is also, active layer is by the GeSn potential well of 12 lamination strains and corresponding 13 layersTensile strain SiGeSn potential barrier composition.
Feature of the present invention is also, lower distribution Bragg reflector is by 24.5 couples of SiaGebSnc/SixGeySnzMaterial is the N-shaped distributed bragg reflector mirror of composition alternately, and described upper distribution Bragg reflector is by 8.5To SiaGebSnc/SixGeySnzMaterial is the p-type distributed bragg reflector mirror of composition alternately, every layer materialCentered by optical thickness 1/4 of reflection wavelength, wherein a+b+c=1,0 < a < 0.1,0 < b < 0.8,0 < c < 0.3,x+y+z＝1，0＜x＜0.8，0＜y＜0.12，0＜z＜0.3。
Feature of the present invention is also, the etching depth of cylindrical mesa is until on lower distribution Bragg reflectorEnd, the height of cylindrical mesa is 3.5 μ m, the radius of cylindrical mesa is 1 μ m.
The preparation method of above-mentioned GeSn MQW wire chamber laser instrument comprises the steps:
Step 1, on Si substrate, utilize low temperature molecular beam epitaxy method growth one deck Ge film, slow as GePunching layer;
Step 2, on Ge cushion successively distribution Bragg reflector, active layer under growth, on the cloth that distributesGlug speculum and deformation relaxation Ge0.88Sn0.12Cushion;
Step 3, the lower distribution Bragg reflector that step 2 is obtained, active layer, upper distribution bragg are anti-Penetrate mirror and deformation relaxation Ge0.88Sn0.12Cushion is etched into cylindrical mesa;
Step 4, utilize low pressure chemical on side and the lower distribution Bragg reflector surface of cylindrical mesaVapour deposition process grown silicon nitride film;
Step 5, at Ge0.88Sn0.12Cushion and silicon nitride film surface are coated with Ag, form Ag metal level.
Beneficial effect of the present invention is as follows:
The wire chamber laser device thermal diffusivity that the present invention is directed to available technology adopting III-V family material is poor,The shortcomings such as photostability is poor, still cannot meet the requirement of sheet glazing electricity integrated system to light source, have proposed oneThere is laser device of the GeSn MQW of the column structure of wire chamber and preparation method thereof. The present inventionCan either CMOS technique compatible, can change stress intensity to realize by adjusting the size of Sn component againThe demand of germanium tin light source to different wavelengths of light, and there is higher photoelectric transformation efficiency and photostability, processingSimply, conveniently.
Brief description of the drawings
Fig. 1 is the structural representation of embodiment of the present invention GeSn MQW wire chamber laser instrument;
Fig. 2 is step 1 in the preparation method of embodiment of the present invention GeSn MQW wire chamber laser instrumentMachining sketch chart;
Fig. 3 is step 2 in the preparation method of embodiment of the present invention GeSn MQW wire chamber laser instrumentMachining sketch chart;
Fig. 4 is step 3 in the preparation method of embodiment of the present invention GeSn MQW wire chamber laser instrumentMachining sketch chart;
Fig. 5 is step 4 in the preparation method of embodiment of the present invention GeSn MQW wire chamber laser instrumentMachining sketch chart;
Fig. 6 is step 5 in the preparation method of embodiment of the present invention GeSn MQW wire chamber laser instrumentMachining sketch chart;
In figure: 1, Si substrate; 2, Ge cushion; 3, lower distribution Bragg reflector; 4, active layer;5, upper distribution Bragg reflector, 6, Ge0.88Sn0.12Cushion, 7, silicon nitride film, 8, Ag metalLayer.
Detailed description of the invention
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing and realityExecute example, the present invention is further elaborated.
Fig. 1 shows the structure of the GeSn MQW wire chamber laser instrument that the embodiment of the present invention provides. AsShown in Fig. 1, a kind of GeSn MQW wire chamber laser instrument of the embodiment of the present invention, comprise Si substrate 1,And be arranged on Ge cushion 2, the lower distribution Bragg reflector 3, active on Si substrate 1 from bottom to topLayer 4, upper distribution Bragg reflector 5 and Ge0.88Sn0.12Cushion 6, active layer 4 adopts strain compensation amountSub-well structure, Ge0.88Sn0.12Cushion 6, upper distribution Bragg reflector 5, active layer 4 and lower distribution clothGlug speculum 3 is etched into cylindrical mesa, the side of cylindrical mesa and lower distribution Bragg reflector3 superficial growths have silicon nitride film 7, Ge0.88Sn0.12On cushion 6 and silicon nitride film 7 surfaces, scribbleAg metal level 8. Due to silver-colored thermal conductivity and reflectivity all very high, therefore do wire chamber with Ag metal,More be conducive to heat radiation, there is better light reflectivity simultaneously, more favourable to forming laser.
In embodiments of the present invention, active layer 4 is by the GeSn potential well of 12 lamination strains and corresponding 13 layersTensile strain SiGeSn potential barrier composition. Quantum well structure is limiting carrier effectively, improves the current-carrying of materialSon injects and luminous efficiency, and reasonably SiGeSn/GeSn/SiGeSn multi-quantum pit structure is conducive to realizeHigh Efficiency Luminescence.
In embodiments of the present invention, lower distribution Bragg reflector 3 is by 24.5 couples of SiaGebSnc/SixGeySnzMaterial is the N-shaped distributed bragg reflector mirror of composition alternately, and upper distribution Bragg reflector 5 is by 8.5 pairsSiaGebSnc/SixGeySnzMaterial is the p-type distributed bragg reflector mirror of composition alternately, the optics of every layer materialCentered by thickness 1/4 of reflection wavelength, wherein a+b+c=1,0 < a < 0.1,0 < b < 0.8,0 < c < 0.3, x+y+z=10 < x < 0.8,0 < y < 0.12,0 < z < 0.3. The electromagnetic wave dropping within the scope of energy gap due to frequency cannot penetrate, clothThe reflectivity of glug speculum can reach more than 99%. Meanwhile, this structure does not have the absorption problem of metallic mirror,Can adjust energy gap position by the refractive index or the thickness that change material again.
In embodiments of the present invention, the etching depth of cylindrical mesa is until lower distribution Bragg reflector upper end,The height of cylindrical mesa is 3.5 μ m, and the radius of cylindrical mesa is 1 μ m.
The preparation method of above-mentioned GeSn MQW wire chamber laser instrument, can be according to mode shown in Fig. 2-Fig. 6Carry out, specifically comprise the steps:
Step 1, on Si substrate, utilize low temperature molecular beam epitaxy method growth one deck Ge film, slow as GePunching layer, the thickness of Ge cushion is 240nm; In embodiments of the present invention, adopt low and high temperature two-step method,First on Si substrate, after 250 DEG C of growth one deck low temperature germanium buffer layers, be warming up to 500 DEG C of growth high temperature germanium bufferingsLayer.
Step 2, on Ge cushion successively distribution Bragg reflector, active layer under growth, on the cloth that distributesGlug speculum and deformation relaxation Ge0.88Sn0.12Cushion.
Step 3, the lower distribution Bragg reflector that step 2 is obtained, active layer, upper distribution bragg are anti-Penetrate mirror and deformation relaxation Ge0.88Sn0.12Cushion is etched into cylindrical mesa.
Step 4, utilize low pressure chemical on side and the lower distribution Bragg reflector surface of cylindrical mesaVapour deposition process grown silicon nitride film.
Step 5, at Ge0.88Sn0.12Cushion and silicon nitride film surface are coated with Ag, form Ag metal level.
In embodiments of the present invention, the upper and lower distributed bragg reflector mirror in step 2 is by two kinds of refractionsThe different material of rate is with SiaGebSnc/SixGeySnz(ABAB) periodic structure of mode alternative arrangement composition,Centered by the optical thickness of every layer material 1/4 of reflection wavelength.
In embodiments of the present invention, the active layer in step 2 is 25 layers of MQW, i.e. 12 lamination strainsGeSn potential well and the SiGeSn potential barrier of 13 layers of tensile strain, the thickness of every layer of potential well is 6nm, every layer of gestureThe thickness of building is 8nm. Under strain equilibrium condition, it has minimized total strain energy, thereby reduces manySQW (MQWs) district's strain misfit dislocation density; In addition, using MQWs structure can offset mirror image passesDefeated and metal loss, thus enough large optical gain obtained.
In embodiments of the present invention, the deformation relaxation Ge in step 20.88Sn0.12The growing method of cushion is adoptedUse low temperature molecular beam epitaxy method, its growth temperature is 200 DEG C, and thickness is 300nm.
In embodiments of the present invention, in step 3, lithographic method is: with silicon nitride (Si3N4) circular maskDetermine patterned area, adopt the method for the plasma/reactive ion etching (PE/RIE) of inductance coupling high to formCylinder, then etches away the Si as mask3N4, wherein said silicon nitride film is for being applicable to strain GeSnThe heavily stressed film of device, protects the mask of figure when the anisotropic etch. Circular mask low pressure,Under 700 DEG C of conditions, adopt LPCVD (Low Pressure Chemical Vapor Deposition) growth, radius is 1 μ m. Step 3Intermediate ion etching etching agent used can be the mixed solution of potassium hydroxide and isopropyl alcohol, fills a prescription as potassium hydroxide:Isopropyl alcohol: water=1: 2: 2,80 DEG C of etching temperatures, the general 90min of etch period, the height of column forming is3.5 μ m; Under 180 DEG C of conditions, use the mixed liquor etching of hydrofluoric acid and phosphoric acid as the Si of mask3N4。
In embodiments of the present invention, in step 4, the growth of silicon nitride film adopts Low Pressure Chemical Vapor Deposition.Silicon nitride film thickness in step 4 is 10nm.
In embodiments of the present invention, in step 5, coated Ag metal level is column, adopts evaporation of metalTechnique is made, and sedimentation rate is 0.18nm/s.
The Ge film of growing in the present embodiment, as the cushion of subsequent step growth GeSn alloy, can reduceEpitaxial mismatched, improve GeSn alloy mass. Distributed bragg reflector mirror (DBRs) is wherein opticsA part for microcavity is with Si by the different material of two kinds of refractive indexesaGebSnc/SixGeySnz(ABAB)The periodic structure of mode alternative arrangement composition, centered by the optical thickness of every layer material 1/4 of reflection wavelength. ByThe electromagnetic wave dropping within the scope of energy gap in frequency cannot penetrate, the reflectivity of Bragg mirror can reach 99% withOn. Meanwhile, this structure does not have the absorption problem of metallic mirror, again can be by changing the refractive index of materialOr thickness is adjusted energy gap position. Adopt the MQW medium of GeSn/SiGeSn alternating growth as activeDistrict introduces compression in GeSn material, introduces tensile strain in SiGeSn, increases active area optical gainThereby improve the luminous efficiency of wire chamber laser device. Separately can be by adjusting the size of Sn component, according to needAsk the stress intensity of adjusting each layer, raising photoelectric transformation efficiency and preparation specific wavelength of lightGeSn/SiGeSn multiple quantum well laser device. Due to silver-colored thermal conductivity and reflectivity all very high, therefore useAg metal does wire chamber, is more conducive to heat radiation, has better light reflectivity simultaneously, to forming laser moreFavourable.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, not all at thisAny amendment of doing within bright spirit and principle, be equal to and replace and improvement etc., all should be included in the present inventionProtection domain within.
Claims (5)
1. a GeSn MQW wire chamber laser instrument, is characterized in that, comprise Si substrate and fromLower and on be arranged on the Ge cushion on Si substrate, lower distribution Bragg reflector, active layer, upper distributionBragg mirror and Ge0.88Sn0.12Cushion, described active layer adopts strain-compensated quantum well structure, instituteState Ge0.88Sn0.12Cushion, upper distribution Bragg reflector, active layer and lower distribution Bragg reflector are carvedLose into cylindrical mesa, the side of cylindrical mesa and lower distribution Bragg reflector superficial growth have nitrogenizeSilicon thin film, described Ge0.88Sn0.12On cushion and silicon nitride mask surface, scribble Ag metal level.
2. GeSn MQW wire chamber laser instrument as claimed in claim 1, is characterized in that, described inActive layer is made up of GeSn potential well and 13 layers of corresponding tensile strain SiGeSn potential barrier of 12 lamination strains.
3. GeSn MQW wire chamber laser instrument as claimed in claim 1, is characterized in that, described inLower distribution Bragg reflector is by 24.5 couples of SiaGebSnc/SixGeySnzThe material alternately N-shaped of composition distributesFormula Bragg mirror, described upper distribution Bragg reflector is by 8.5 couples of SiaGebSnc/SixGeySnzMaterialThe p-type distributed bragg reflector mirror of composition alternately, reflection wavelength centered by the optical thickness of every layer material1/4, wherein a+b+c=1,0 < a < 0.1,0 < b < 0.8,0 < c < 0.3, x+y+z=1,0 < x < 0.8,0 < y < 0.120＜z＜0.3。
4. GeSn MQW wire chamber laser instrument as claimed in claim 1, is characterized in that, described inThe etching depth of cylindrical mesa is until lower distribution Bragg reflector upper end, and the height of cylindrical mesa is3.5 μ m, the radius of cylindrical mesa is 1 μ m.
5. the preparation method of GeSn MQW wire chamber laser instrument as described in as arbitrary in claim 1-4, itsBe characterised in that, comprise the steps:
Step 1, on Si substrate, utilize low temperature molecular beam epitaxy method growth one deck Ge film, slow as GePunching layer;
Step 2, on Ge cushion successively distribution Bragg reflector, active layer under growth, on the cloth that distributesGlug speculum and deformation relaxation Ge0.88Sn0.12Cushion;
Step 3, the lower distribution Bragg reflector that step 2 is obtained, active layer, upper distribution bragg are anti-Penetrate mirror and deformation relaxation Ge0.88Sn0.12Cushion is etched into cylindrical mesa;
Step 4, utilize low pressure chemical on side and the lower distribution Bragg reflector surface of cylindrical mesaVapour deposition process grown silicon nitride film;
Step 5, at Ge0.88Sn0.12Cushion and silicon nitride film surface are coated with Ag, form Ag metal level.
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| CN107069430A (en) * | 2017-04-18 | 2017-08-18 | 中国科学院半导体研究所 | Silicon substrate electrical injection laser and preparation method thereof |
| CN107342535A (en) * | 2017-06-20 | 2017-11-10 | 西安电子科技大学 | Strained multiple quantum well laser based on GeSn/SiGeSn materials and preparation method thereof |
| CN107785368A (en) * | 2016-08-25 | 2018-03-09 | 西安电子科技大学 | Strain GeSnMOS devices and preparation method thereof, integrated circuit and computer |
| CN109244829A (en) * | 2018-09-17 | 2019-01-18 | 西安电子科技大学 | Ge/GeSn heterolaser and preparation method thereof |
| CN109343237A (en) * | 2018-12-14 | 2019-02-15 | 华中科技大学 | A kind of electroluminescent refractive index modulation device of germanium silicon quantum well and integrated opto-electronic device |
| CN115394884A (en) * | 2021-05-21 | 2022-11-25 | 深圳第三代半导体研究院 | Light emitting diode and method for manufacturing light emitting diode |
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