CN109343237A - A kind of electroluminescent refractive index modulation device of germanium silicon quantum well and integrated opto-electronic device - Google Patents
A kind of electroluminescent refractive index modulation device of germanium silicon quantum well and integrated opto-electronic device Download PDFInfo
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- CN109343237A CN109343237A CN201811529867.0A CN201811529867A CN109343237A CN 109343237 A CN109343237 A CN 109343237A CN 201811529867 A CN201811529867 A CN 201811529867A CN 109343237 A CN109343237 A CN 109343237A
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 130
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 11
- 229910000676 Si alloy Inorganic materials 0.000 claims abstract description 102
- 230000004888 barrier function Effects 0.000 claims abstract description 44
- 230000008878 coupling Effects 0.000 claims abstract description 39
- 238000010168 coupling process Methods 0.000 claims abstract description 39
- 238000005859 coupling reaction Methods 0.000 claims abstract description 39
- 238000000926 separation method Methods 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000011435 rock Substances 0.000 claims abstract description 17
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 12
- 230000003287 optical effect Effects 0.000 description 12
- 238000000862 absorption spectrum Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000001808 coupling effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
- G02F1/0153—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index using electro-refraction, e.g. Kramers-Kronig relation
Abstract
The invention discloses a kind of electroluminescent refractive index modulation device of germanium silicon quantum well and integrated opto-electronic devices, it include: P-type silicon substrate, p-type germanium-silicon alloy buffer layer, separation layer under intrinsic germanium-silicon alloy, intrinsic germanium-silicon alloy coupling quantum well layer, separation layer on intrinsic germanium-silicon alloy, N-type germanium-silicon alloy cap rock, intrinsic germanium-silicon alloy coupling quantum well layer is made of multiple asymmetric coupled quantum wells, single asymmetric coupled quantum well by two different in width Quantum Well, one intermediate thin barrier, two side barrier compositions, two neighboring asymmetric coupled quantum well shares side barrier area, the germanium-silicon alloy component proportion of two side barriers is identical, the Ge content of intermediate thin barrier has to be lower than described two side barriers.The low asymmetric coupled quantum well of area Ge content is built in centre, and barrier height is higher than two sides barrier region, prevents the intermediate Quantum Well for building area two sides from coupling in no extra electric field, more preferable to the coupling control effect of two Quantum Well when added electric field couples.
Description
Technical field
The invention belongs to integrated opto-electronic device technical fields, more particularly, to a kind of electroluminescent refraction of germanium silicon quantum well
Rate modulator and integrated opto-electronic device.
Background technique
With the rapid development of optic communication and optical interconnection, integrated optoelectronic circuit plays more and more important in the data transmission
Role.Due to mutually compatible with mature CMOS technology, silicon based opto-electronics is considered as most promising electronics and photon device
The integrated platform of part.The silicon based optoelectronic devices of high-efficiency compact are the premises for realizing extensive optoelectronic intagration system, and one
CMOS technique compatible, high-performance low-power-consumption optical modulator be a crucial device for optic communication and optical interconnection system
Part.
Silicon substrate phase-modulator is mainly the phase-modulation that light wave is realized using plasma dispersion effect at present, i.e., logical
Cross the refractive index for changing the carrier concentration in silicon materials to change material.It can be with according to the mode that voltage changes carrier concentration
Silicon-based modulator is divided into: the pouring-in modulation of carrier, the modulation of carrier accumulation formula, the modulation of carrier depletion formula.Carrier note
Entering technology is to obtain carrier concentration to change most mature technology, and advantage is that the parameter index of entire waveguide is relatively equal
It is even, very high modulation efficiency may be implemented.However, the main problem of this type modulator is due to the sub- time-to-live few in silicon
It is longer to cause its running speed slow.In addition relatively large Injection Current will lead to higher power consumption, this also results in temperature simultaneously
Degree increases, and thermo-optic effect will lead to the increase of refractive index in silicon, but carrier injection can be such that refractive index reduces, therefore final
It will lead to modulation effect decrease.The modulating speed of carrier accumulation formula and carrier depletion formula is no longer limited by few son in silicon
Service life, but the RC constant of device is depended on, therefore its modulation rate is relatively high.But the modulator of this type is due to current-carrying
The overlapping area of sub- region of variation and light field is smaller, thus modulation efficiency is lower, and energy consumption is also higher.The silicon of these three modes
Base modulator size is all larger, is unfavorable for the integrated of on piece silicon-based photoelectric device.
YI ZHANG et al. carries out theory analysis, disclosure to asymmetric Ge/SiGe coupling quantum well electricity variations in refractive index
A kind of germanium silicon asymmetric coupled quantum well, is made of 8 couples of CQW: 8 × [built in 6nm Ge QW+1.6nm Si0.1Ge0.9
+ 12nm Ge QW+24nm Si0.15Ge0.85 outwork area of area].Asymmetric CQW is designed and is used symmetrical CQW structure phase in the past
Than having better modulation effect.Width identical with the base area outside Si0.15Ge0.85 is set by the broader Ge QW of CQW
Degree, to realize the low applied voltage and the higher CQW density of each active area of given electric field.The width that area is built in outside is enough to avoid
Coupling in adjacent continuous Quantum Well.The Ge content in the area Nei Lei be higher than outwork area, therefore can obtain lower Ge Quantum Well with
Energy gap between the area Nei Lei, so as to enhance the coupling between narrow Quantum Well (QW1) and wide Quantum Well (QW2).However, this is non-
The intermediate potential energy for building area of symmetrical CQW is lower than two sides base area.
Summary of the invention
In view of the drawbacks of the prior art, occur it is an object of the invention to solving the prior art when voltage is not added coupling,
Coupling effect is poor, the technical issues of speed is difficult to control in preparation process.
To achieve the above object, in a first aspect, the embodiment of the invention provides a kind of electroluminescent refractive index tune of germanium silicon quantum well
Device processed successively includes: separation layer under P-type silicon substrate, p-type germanium-silicon alloy buffer layer, intrinsic germanium-silicon alloy, intrinsic from lower to upper
Separation layer, N-type germanium-silicon alloy cap rock in germanium-silicon alloy coupling quantum well layer, intrinsic germanium-silicon alloy, the intrinsic germanium-silicon alloy coupling
Close quantum well layer be made of multiple asymmetric coupled quantum wells, single asymmetric coupled quantum well by two different in width quantum
Trap, an intermediate thin barrier, two side barrier compositions, two neighboring asymmetric coupled quantum well share a side barrier
The germanium-silicon alloy component proportion Ge Ge content in area, two side barriers is identical, and the Ge content of intermediate thin barrier has to be lower than described
Two side barriers.
Specifically, the intrinsic germanium-silicon alloy coupling quantum well layer is made of 5~10 asymmetric coupled quantum wells.
Specifically, the material component of described two side barriers is Si0.15Ge0.85。
Specifically, the material component of the intermediate thin barrier is Si0.17Ge0.83。
Specifically, the constituent of the single asymmetric coupled quantum well of active area are as follows: 12nmSi0.15Ge0.85+6nmGe+
2nmSi0.17Ge0.83+12nmGe+12nmSi0.15Ge0.85, the width of the intermediate thin barrier is 2nm.
Specifically, separation layer under the p-type germanium-silicon alloy buffer layer, intrinsic germanium-silicon alloy, be isolated on intrinsic germanium-silicon alloy
Layer, N-type germanium-silicon alloy cap rock alloy compositions Ge Ge content proportion have to be larger than the germanium-silicon alloy groups of described two side barriers
Divide Ge Ge content proportion.
Specifically, separation layer under the p-type germanium-silicon alloy buffer layer, intrinsic germanium-silicon alloy, be isolated on intrinsic germanium-silicon alloy
Layer, N-type germanium-silicon alloy cap rock material component be Si0.1Ge0.9。
Specifically, the height of the P-type silicon substrate is 500 μm~600 μm, the height of the p-type germanium-silicon alloy buffer layer
For 400nm~450nm, the height of separation layer is 50nm~80nm, the intrinsic germanium-silicon alloy coupling under the intrinsic germanium-silicon alloy
The height for closing quantum well layer is 200nm~400nm, and the height of separation layer is 50nm~80nm, N-type on the intrinsic germanium-silicon alloy
The height of germanium-silicon alloy cap rock is 150nm~200nm.
Specifically, the P-type silicon substrate, the p-type germanium-silicon alloy buffer layer width be 1.6 μm~2.4 μm；It is described
Separation layer under intrinsic germanium-silicon alloy, the intrinsic germanium-silicon alloy coupling quantum well layer, separation layer on the intrinsic germanium-silicon alloy
Width is 700nm~800nm.
Second aspect, the embodiment of the invention provides a kind of integrated opto-electronic device, the integrated-optic device is using such as
The electroluminescent refractive index modulation device of germanium silicon quantum well described in first aspect.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, have below beneficial to effect
Fruit:
1. in the present invention single asymmetric coupled quantum well by the Quantum Well of two different in width, an intermediate thin barrier,
Two side barrier compositions, two neighboring asymmetric coupled quantum well share side barrier area, the germanium of two side barriers
Silicon alloy component proportion Ge Ge content is identical, and the Ge content of intermediate thin barrier has to be lower than described two side barriers.Compared to
Common quantum well structure, under same electric field strength, the red shift that asymmetric coupled quantum well optical absorption spectra generates is more obvious, i.e.,
Optical absorption spectra variation is more significant；Meanwhile compared to the absorption spectra of common quantum well structure, asymmetric coupled quantum well light absorption
Spectrum has more exciton absorption peaks, therefore the variations in refractive index generated is also more significant.Compare two sides compared to that intermediate area of building
The Ge content for building area wants high asymmetric coupled quantum well, and this intermediate base area of the present invention is lower than the Ge content in two sides base area
Asymmetric coupled quantum well, its barrier height is higher than the barrier region of two sides, can prevent the intermediate Quantum Well for building area two sides
It is coupled in no extra electric field, it is more preferable to the coupling control effect of two Quantum Well when added electric field couples.Together
When, silicone content is higher in germanium-silicon alloy, and when growing germanium silicon alloy material, the speed of growth is slower, therefore more easy accurately grows
Desired width out.Compared to that intermediate base lesser asymmetric coupled quantum well of sector width, intermediate base area of the invention is wide
Degree is bigger, and the control effect of coupling is more preferable, and the accurate growth of material width is easier to realize.
2. (separation layer, intrinsic germanium silicon close other assemblies under p-type germanium-silicon alloy buffer layer, intrinsic germanium-silicon alloy in the present invention
Separation layer, N-type germanium-silicon alloy cap rock on gold) germanium-silicon alloy in Ge ratio be larger than intrinsic germanium-silicon alloy coupling quantum well
The outermost layer of floor builds area, and the effect for building area is to cause restriction effect bad if being less than, such as limiting the electronics in Quantum Well
Fruit is too many greatly, it may appear that lattice mismatches.
3. the present invention is by separation layer under intrinsic germanium-silicon alloy, the intrinsic germanium-silicon alloy coupling quantum well layer, described intrinsic
The width of separation layer is set as being 700nm~800nm on germanium-silicon alloy, and avoiding too wide will become multimode, single mode point
The power being fitted on becomes smaller, and energy is not concentrated, and it is too narrow cannot be guide-lighting, can not work.
Detailed description of the invention
Fig. 1 is a kind of electroluminescent refractive index modulation device structural schematic diagram of germanium silicon quantum well provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the single asymmetric coupled quantum well of active area provided in an embodiment of the present invention；
Fig. 3 is light of the electroluminescent refractive index modulation device of germanium silicon quantum well provided in an embodiment of the present invention under different electric field strengths
Absorb spectrogram；
Fig. 4 is the electroluminescent refractive index modulation device of germanium silicon quantum well provided in an embodiment of the present invention under 30kv/cm electric field strength
Variations in refractive index figure；
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, in which: 1-P type silicon substrate,
Separation layer, the intrinsic germanium-silicon alloy coupling quantum well layer of 4-, 5- are intrinsic under 2-P type germanium-silicon alloy buffer layer, the intrinsic germanium-silicon alloy of 3-
Separation layer, 6-N type germanium-silicon alloy cap rock, 7-N electrode, 8-P electrode, 9- silicon dioxide insulator coating on germanium-silicon alloy.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
As shown in Figure 1, a kind of electroluminescent refractive index modulation device of germanium silicon quantum well, from lower to upper successively are as follows: P-type silicon substrate 1,
Separation layer 3, intrinsic germanium-silicon alloy coupling quantum well layer 4, intrinsic germanium silicon close under p-type germanium-silicon alloy buffer layer 2, intrinsic germanium-silicon alloy
Separation layer 5, N-type germanium-silicon alloy cap rock 6 on gold.
The stress generated when p-type germanium-silicon alloy buffer layer 2 is grown for releasable material due to lattice mismatch.
Separation layer 3 is intrinsic for preventing the Doped ions in p-type germanium-silicon alloy buffer layer from being diffused under intrinsic germanium-silicon alloy
In germanium-silicon alloy coupling quantum well layer, height is unsuitable blocked up, so that light field can more concentrate on intrinsic germanium-silicon alloy coupling
In quantum well layer, alloy compositions proportion must be consistent with p-type germanium-silicon alloy buffer layer 2, be produced when to avoid Material growth
Raw stress and dislocation.
Separation layer 5 is for preventing the Doped ions in N-type germanium-silicon alloy cap rock 6 from being diffused into intrinsic germanium on intrinsic germanium-silicon alloy
In silicon alloy coupling quantum well layer, height is unsuitable blocked up, so that light field can more concentrate on intrinsic germanium-silicon alloy coupling amount
In sub- well layer, alloy compositions proportion must be matched with the alloy compositions of N-type germanium-silicon alloy cap rock 6 and is consistent, to avoid material
Stress and dislocation are generated when material growth.
Intrinsic germanium-silicon alloy coupling quantum well layer 4 is made of 5~10 asymmetric coupled quantum wells in the present invention.It is single non-
Symmetric coupled quantum well is made of the Quantum Well of two different in width, an intermediate thin barrier, two side barriers, two neighboring
Asymmetric coupled quantum well shares side barrier area, wherein the alloy compositions proportion of two side barriers is identical and intermediate
Thin-walled is built must be low than the Ge content of two side barriers.As shown in Fig. 2, the composition of the single asymmetric coupled quantum well of active area
Ingredient are as follows: 12nmSi0.15Ge0.85+6nmGe+2nmSi0.17Ge0.83+12nmGe+12nmSi0.15Ge0.85, wherein two Quantum Well
Width be respectively 6nm and 12nm, material component is pure germanium；The width that intermediate thin builds area is preferably 2nm, and material component is preferably
Si0.17Ge0.83；The base sector width on both sides is 12nm, material component Si0.15Ge0.85, two neighboring asymmetric coupling quantum
Trap shares a 12nmSi0.15Ge0.85Side barrier area.It is non-right under same electric field strength compared to common quantum well structure
The red shift for claiming coupling quantum well optical absorption spectra to generate is more obvious, i.e. optical absorption spectra variation is more significant；Meanwhile compared to common
The absorption spectra of quantum well structure, asymmetric coupled quantum well optical absorption spectra have more exciton absorption peaks, therefore the refraction generated
Rate variation is also more significant.The asymmetric coupled quantum well higher than the Ge content in two sides base area compared to that intermediate base area,
This intermediate base area of the present invention asymmetric coupled quantum well lower than the Ge content in two sides base area, its barrier height compare two sides
Barrier region want high, can prevent the intermediate Quantum Well for building area two sides from coupling in no extra electric field, in added electric field generation
It is more preferable to the coupling control effect of two Quantum Well when coupling.Meanwhile silicone content is higher in germanium-silicon alloy, closes in growth germanium silicon
The speed of growth is slower when golden material, therefore more easy accurately grows desired width.Compared to that intermediate base sector width
Lesser asymmetric coupled quantum well, intermediate base sector width of the invention is bigger, and the control effect of coupling is more preferable, material width
Accurate growth is easier to realize.
The electroluminescent refractive index modulation device of germanium silicon quantum well further include: silicon dioxide insulator coating 9, N electrode 7 and P electricity
Pole 8.Wherein, N electrode 7 is placed on 6；P electrode 8 is placed in 2 upper left sides (being also possible to right side) one end；Silicon dioxide insulator coating
9 are placed in the entire modulator upper surface in addition to N electrode 7 and P electrode 8, N electrode 7 and P electrode 8 in 9.
In the present embodiment, the electroluminescent refractive index modulation device of germanium silicon quantum well is to control to believe light by N electrode 7 and P electrode 8
Number phase-modulation.When device does not have applied voltage, the optical absorption spectra of entire device is as shown on the solid line in figure 3；When device plus
When upper external bias, coupling quantum well region can generate the electric field in a vertical quantum well layer direction, according to quantum confined Stark
Effect, optical absorption spectra can be mobile (red shift) to long wave length direction, and as shown in phantom in Figure 3, and institute's biasing is higher, and movement is got over
Obviously.According to Kramers-Kronig relationship, the variation of absorption spectra will lead to the change of refractive index, thus by changing outer power-up
Pressure can change the refractive index of the electroluminescent refractive index modulation device of germanium silicon quantum well, to realize the phase-modulation to optical signal.
As shown in figure 4, when operation wavelength is near 1461nm, under 30kv/cm electric field strength, the germanium silicon of the present embodiment
The electroluminescent refractive index modulation device of Quantum Well can produce about 0.9% refraction index changing.Compared to conventional phase modulator, refractive index
Amplitude of variation improves nearly an order of magnitude.Simultaneously because the thickness of device is smaller, voltage needed for realizing the electric field strength is not
More than 1V, the operating voltage and power consumption of modulator are significantly reduced, is conducive to the integrated of on piece silicon-based photoelectric device.
Preferably, the height of P-type silicon substrate 1 is 500 μm~600 μm, and width is 1.6 μm~2.4 μm；P-type silicon substrate 1
Doping concentration is 1 × 1013cm3~1 × 1015cm3, dopant is B ion.
Preferably, the height of p-type germanium-silicon alloy buffer layer 2 is 400nm~450nm, and width is 1.6 μm~2.4 μm, and with
1 equivalent width；The doping concentration of p-type germanium-silicon alloy buffer layer 2 is 5 × 1018cm3~1 × 1019cm3, dopant is B ion.
The alloy compositions proportion of p-type germanium-silicon alloy buffer layer 2 is Si0.1Ge0.9。
Preferably, the height of separation layer 3 is 50nm~80nm under intrinsic germanium-silicon alloy, and width is 700nm~800nm；This
The alloy compositions proportion for levying separation layer 3 under germanium-silicon alloy is Si0.1Ge0.9。
Preferably, the height of intrinsic germanium-silicon alloy coupling quantum well layer 4 be 200nm~400nm, width be 700nm~
800nm, and the equivalent width with 3.
Preferably, the height of separation layer 5 is 50nm~80nm on intrinsic germanium-silicon alloy, and width is 700nm~800nm, and
With 4 equivalent width；The alloy compositions proportion of separation layer 5 is Si on intrinsic germanium-silicon alloy0.1Ge0.9。
Preferably, the height of N-type germanium-silicon alloy cap rock 6 is 150nm~200nm, and width is 700nm~800nm, and with 5
Equivalent width；The alloy compositions proportion of N-type germanium-silicon alloy cap rock 6 is Si0.1Ge0.9；The doping of N-type germanium-silicon alloy cap rock 6 is dense
Degree is 5 × 1018cm3~1 × 1019cm3, dopant is p ion.
Preferably, N electrode 7 and P electrode 8 are nickel alumin(i)um alloy, and wherein nickel metal layer is metal with a thickness of 10nm~20nm
Adhesion layer, for increasing the adhesion strength between electrode and germanium silicon material；Aluminum metal layer is electric signal with a thickness of 100nm~200nm
Contact layer；Contact area between electrode and germanium silicon material should not be too large, too strong to avoid absorption of the metal to optical signal.
Preferably, above-mentioned silicon dioxide insulator coating with a thickness of 0.3 μm~1 μm, for integrally carrying out electricity to device
Learn isolation.
More than, the only preferable specific embodiment of the application, but the protection scope of the application is not limited thereto, and it is any
Within the technical scope of the present application, any changes or substitutions that can be easily thought of by those familiar with the art, all answers
Cover within the scope of protection of this application.Therefore, the protection scope of the application should be subject to the protection scope in claims.
Claims (10)
1. a kind of electroluminescent refractive index modulation device of germanium silicon quantum well, successively includes: P-type silicon substrate, p-type germanium-silicon alloy from lower to upper
Separation layer under buffer layer, intrinsic germanium-silicon alloy, intrinsic germanium-silicon alloy coupling quantum well layer, separation layer, N-type on intrinsic germanium-silicon alloy
Germanium-silicon alloy cap rock, the intrinsic germanium-silicon alloy coupling quantum well layer are made of multiple asymmetric coupled quantum wells, single non-right
Coupling quantum well is claimed to be made of the Quantum Well of two different in width, an intermediate thin barrier, two side barriers, it is two neighboring non-
Symmetric coupled quantum well shares side barrier area, which is characterized in that the germanium-silicon alloy component proportion Ge of two side barriers
Ge content is identical, and the Ge content of intermediate thin barrier has to be lower than described two side barriers.
2. the electroluminescent refractive index modulation device of germanium silicon quantum well as described in claim 1, which is characterized in that the intrinsic germanium-silicon alloy
Coupling quantum well layer is made of 5~10 asymmetric coupled quantum wells.
3. the electroluminescent refractive index modulation device of germanium silicon quantum well as described in claim 1, which is characterized in that described two side barriers
Material component be Si0.15Ge0.85。
4. the electroluminescent refractive index modulation device of germanium silicon quantum well as claimed in claim 3, which is characterized in that the intermediate thin barrier
Material component is Si0.17Ge0.83。
5. the electroluminescent refractive index modulation device of germanium silicon quantum well as claimed in claim 4, which is characterized in that active area is individually asymmetric
The constituent of coupling quantum well are as follows: 12nmSi0.15Ge0.85+6nmGe+2nmSi0.17Ge0.83+12nmGe+
12nmSi0.15Ge0.85, the width of the intermediate thin barrier is 2nm.
6. the electroluminescent refractive index modulation device of germanium silicon quantum well as described in claim 1, which is characterized in that the p-type germanium-silicon alloy
Separation layer under buffer layer, intrinsic germanium-silicon alloy, on intrinsic germanium-silicon alloy separation layer, N-type germanium-silicon alloy cap rock alloy compositions Ge
Ge content proportion has to be larger than the germanium-silicon alloy component Ge Ge content proportion of described two side barriers.
7. the electroluminescent refractive index modulation device of germanium silicon quantum well as claimed in claim 6, which is characterized in that the p-type germanium-silicon alloy
Separation layer under buffer layer, intrinsic germanium-silicon alloy, separation layer on intrinsic germanium-silicon alloy, N-type germanium-silicon alloy cap rock material component be
Si0.1Ge0.9。
8. the electroluminescent refractive index modulation device of germanium silicon quantum well as described in claim 1, which is characterized in that the P-type silicon substrate
Height is 500 μm~600 μm, and the height of the p-type germanium-silicon alloy buffer layer is 400nm~450nm, the intrinsic germanium-silicon alloy
The height of lower separation layer is 50nm~80nm, and the height of the intrinsic germanium-silicon alloy coupling quantum well layer is 200nm~400nm,
The height of separation layer is 50nm~80nm on the intrinsic germanium-silicon alloy, the height of N-type germanium-silicon alloy cap rock be 150nm~
200nm。
9. the electroluminescent refractive index modulation device of germanium silicon quantum well as described in claim 1, which is characterized in that the P-type silicon substrate, institute
The width for stating p-type germanium-silicon alloy buffer layer is 1.6 μm~2.4 μm；Separation layer, the intrinsic germanium under the intrinsic germanium-silicon alloy
The width of separation layer is 700nm~800nm in silicon alloy coupling quantum well layer, the intrinsic germanium-silicon alloy.
10. a kind of integrated opto-electronic device, which is characterized in that the integrated-optic device is used such as any one of claim 1 to 9
The electroluminescent refractive index modulation device of the germanium silicon quantum well.
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Application publication date: 20190215 Assignee: SHENZHEN ADTEK TECHNOLOGY CO.,LTD. Assignor: HUAZHONG University OF SCIENCE AND TECHNOLOGY Contract record no.: X2023980054774 Denomination of invention: A germanium silicon quantum well electrorefractive index modulator and integrated optoelectronic device Granted publication date: 20200519 License type: Common License Record date: 20240104 |