CN108153001B - Large-bandwidth silicon-based optical modulator - Google Patents
Large-bandwidth silicon-based optical modulator Download PDFInfo
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- CN108153001B CN108153001B CN201611103311.6A CN201611103311A CN108153001B CN 108153001 B CN108153001 B CN 108153001B CN 201611103311 A CN201611103311 A CN 201611103311A CN 108153001 B CN108153001 B CN 108153001B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 131
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 131
- 239000010703 silicon Substances 0.000 title claims abstract description 131
- 230000003287 optical effect Effects 0.000 title claims abstract description 88
- 230000010287 polarization Effects 0.000 claims abstract description 44
- 239000010409 thin film Substances 0.000 claims abstract description 38
- 239000010408 film Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 6
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910000859 α-Fe Inorganic materials 0.000 claims description 4
- HBAGRTDVSXKKDO-UHFFFAOYSA-N dioxido(dioxo)manganese lanthanum(3+) Chemical compound [La+3].[La+3].[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O HBAGRTDVSXKKDO-UHFFFAOYSA-N 0.000 claims description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FOLMBQLGENFKLO-UHFFFAOYSA-N [Pb].[Mg].[Nb] Chemical compound [Pb].[Mg].[Nb] FOLMBQLGENFKLO-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/05—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect with ferro-electric properties
- G02F1/0516—Operation of the cell; Circuit arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/05—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect with ferro-electric properties
- G02F1/0533—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect with ferro-electric properties structurally associated with a photo-conductive layer
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention provides a large-bandwidth silicon-based optical modulator, which comprises: a substrate and an insulating layer thereon; an n-type doped silicon layer located over the insulating layer; a p-type doped silicon layer located over the n-type doped silicon layer; a ferroelectric thin film located over the p-type doped silicon layer; the n-type doped silicon layer is grounded, the p-type doped silicon layer is connected with a control signal, and the ferroelectric film is connected with the control signal. The invention effectively integrates the ferroelectric film with the common silicon-based optical modulator, and greatly improves the variation range and the sensitivity of the carrier concentration in the optical modulator by utilizing the field intensity of the ferroelectric film during polarization, thereby improving the modulation bandwidth of the optical modulator. The invention can be directly used for a silicon-based optical modulator and can also be used for two arms of a Mach-Zehnder type optical modulator, and the modulation width of the modulator can be further increased by the Mach-Zehnder type optical modulator. The invention has simple structure, convenient control and compatible process with CMOS, and is very suitable for industrial popularization.
Description
Technical Field
The invention belongs to the technical field of silicon photons, and particularly relates to a novel high-speed silicon-based optical modulator for increasing modulation bandwidth by utilizing a ferroelectric film polarization effect.
Background
With the rise of intelligent devices and the popularization of social networks, communication traffic is growing explosively. The traditional electrical interconnection technology faces the problems of overlarge power consumption and overhigh time delay due to the increase of the number of transistors and the multiple increase of the throughput of chips, and the electricity consumed by the current global computing center accounts for 0.8 percent of the total electricity generation. The development of silicon photon technology provides an effective way for solving the problems. On one hand, the manufacturing process of the silicon-based integrated optical device is completely compatible with the microelectronic process, and the light wave is an electromagnetic wave (200-; on the other hand, Wavelength Division Multiplexing (WDM) greatly improves the utilization rate of the communication bandwidth; in addition, optical communication has the advantages of small time delay, less heat generation, electromagnetic interference resistance and the like. Therefore, the silicon photonics technology is becoming the leading edge and hot spot of the information science technology, and developed countries including the united states, european union, japan, and the like are increasingly placing the silicon photonics technology in the strategic technical plan, and striving to dominate the new electronic information technology revolution.
The main research fields of the silicon photon technology are light source, electro-optical modulation, optical detection, optical multiplexing and waveguide fiber coupling technology. The current commercial high-speed optical modulator is based on electro-optical materials such as lithium nickelate and III-V semiconductor, and for silicon photon technology, new materials need to be introduced and are not compatible with the existing CMOS technology. The current research has two directions, namely a silicon modulator based on a micro-ring resonant cavity and a silicon-based optical modulator based on a plasma dispersion effect, and compared with the former, the latter has a simpler structure and a smaller volume, so the development of the silicon-based optical modulator is expected. The plasma dispersion effect is a phenomenon in which the refractive index and the absorption coefficient of a semiconductor change when the concentration of free carriers changes. Some silicon-based optical modulators based on the plasma dispersion effect reported at present use the principle that the carrier concentration in the PN junction changes with the intensity and direction change of an external electric field to achieve the purpose of electrically controlled optical modulation. However, the method of simply adjusting and controlling the carrier concentration by the external electric field applied to the PN junction has a small variation range of the carrier concentration and a narrow modulation range of light. This problem has not been solved at present.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides a large bandwidth silicon-based optical modulator, which is used to solve the problem of narrow modulation range of the silicon-based optical modulator based on the plasma dispersion effect in the prior art. The invention effectively integrates the ferroelectric film with the common silicon-based optical modulator, and greatly improves the variation range and the sensitivity of the carrier concentration in the optical modulator by utilizing the field intensity of the ferroelectric film during polarization, thereby improving the modulation bandwidth of the optical modulator.
To achieve the above and other related objects, the present invention provides a large bandwidth silicon-based optical modulator, comprising: a substrate and an insulating layer thereon; an n-type doped silicon layer located over the insulating layer; a p-type doped silicon layer located over the n-type doped silicon layer; a ferroelectric thin film located over the p-type doped silicon layer; the n-type doped silicon layer is grounded, the p-type doped silicon layer is connected with a control signal, and the ferroelectric film is connected with the control signal.
As a preferable scheme of the large-bandwidth silicon-based optical modulator, the thickness of the ferroelectric film is 200-500 nm.
As a preferred embodiment of the large bandwidth silicon-based optical modulator of the present invention, the ferroelectric thin film has an orientation of <111> orientation.
As a preferable embodiment of the large-bandwidth silicon-based optical modulator of the present invention, the ferroelectric thin film is a bismuth ferrite thin film.
As a preferable scheme of the large-bandwidth silicon-based optical modulator of the present invention, the ferroelectric thin film is a lanthanum manganate thin film.
As a preferable embodiment of the large-bandwidth silicon-based optical modulator of the present invention, the ferroelectric thin film is a lead magnesium niobate titanate thin film.
Preferably, the ratio of the lead magnesium niobate to the lead titanate in the lead magnesium niobate titanate film is 60-70: 30-40.
Preferably, the orientation of the p-type doped silicon layer is a <111> orientation.
When a low-voltage control signal is input, the current in a p-n junction formed by the p-type doped silicon layer and the n-type doped silicon layer is small, the free carrier concentration is low, the ferroelectric film is in a positive polarization state, negatively charged polarization charges appear on one side close to the p-type doped silicon layer, and the free carrier concentration in the p-type doped silicon layer is reduced due to the polarization field intensity; when a high-voltage control signal is input, the current in a p-n junction formed by the p-type doped silicon layer and the n-type doped silicon layer is larger, the free carrier concentration is larger, the polarization of the ferroelectric film is reversed, a positively charged polarization charge appears on one side close to the p-type silicon, and the polarization field strength of the ferroelectric film enables the free carrier concentration in the p-type doped silicon layer to be improved.
The present invention also provides an optical modulator device comprising: a light inlet; at least two large-bandwidth silicon-based optical modulators, wherein the optical input ends of the at least two large-bandwidth silicon-based optical modulators are respectively connected with the optical inlets; and the light outlet is connected with the light output end of each large-bandwidth silicon-based light modulator.
As described above, the large-bandwidth silicon-based optical modulator of the present invention has the following beneficial effects:
the invention effectively integrates the ferroelectric film with the common silicon-based optical modulator, and greatly improves the variation range and the sensitivity of the carrier concentration in the optical modulator by utilizing the field intensity of the ferroelectric film during polarization, thereby improving the modulation bandwidth of the optical modulator. The invention can be directly used for a silicon-based optical modulator and can also be used for two arms of a Mach-Zehnder type optical modulator, and the modulation width of the modulator can be further increased by the Mach-Zehnder type optical modulator. The invention has simple structure, convenient control and compatible process with CMOS, and is very suitable for industrial popularization.
Drawings
Fig. 1 is a schematic diagram of a large bandwidth silicon-based optical modulator according to the present invention.
Fig. 2 is a schematic diagram showing the operation state of the large-bandwidth silicon-based optical modulator of the present invention when the voltage of the control signal is small.
Fig. 3 is a schematic diagram showing the operation state of the large-bandwidth silicon-based optical modulator according to the present invention when the voltage of the control signal is large.
Fig. 4 is a schematic structural diagram of the two arms of the large-bandwidth silicon-based optical modulator of the present invention for a mach-zehnder type optical modulator.
Description of the element reference numerals
1 large bandwidth silicon-based optical modulator
101 single crystal silicon substrate
102 insulating layer
103 n-type doped silicon layer
104 and 105 n type high concentration doping region
106 and 107 silicon dioxide layers
108 and 109 p type high concentration doped region
112 p-type doped silicon layer
113 ferroelectric thin film
110. 111 and 114 metal electrodes
2 light entry
3 light outlet
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 4. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example 1
As shown in fig. 1, the present embodiment provides a large-bandwidth silicon-based optical modulator 1, including: a substrate and an insulating layer 102 thereon; an n-type doped silicon layer 103 located over the insulating layer 102; a p-type doped silicon layer 112 located over the n-type doped silicon layer 103; a ferroelectric thin film 113 on the p-doped silicon layer 112; the n-type doped silicon layer 103 is grounded, the p-type doped silicon layer 112 is connected to a control signal, and the ferroelectric thin film 113 is connected to the control signal.
Illustratively, the ferroelectric thin film 113 has a thickness of 200 to 500 nm. The orientation of the ferroelectric thin film 113 is <111> orientation. The orientation of the p-doped silicon layer 112 is a <111> orientation. The ferroelectric thin film 113 can be a bismuth ferrite thin film, a lanthanum manganate thin film, a lead magnesium niobate titanate thin film and other ferroelectric materials, wherein the bismuth ferrite is a room-temperature ferroelectric material and is also a multiferroic material, and can be applied to occasions needing magnetoelectric coupling; the lead magnesium niobate titanate is a novel relaxor ferroelectric material, has high dielectric constant, large piezoelectric coefficient and more excellent iron polarization performance compared with the traditional ferroelectric material, and is also suitable for the application of the invention. The lead magnesium niobate titanate is a solid solution consisting of lead magnesium niobate and lead titanate, and the ratio of the lead magnesium niobate to the lead titanate in the lead magnesium niobate titanate film can be 60-70: 30-40. The ferroelectric properties are best when the ratio of lead magnesium niobate to lead titanate is about 65: 35. When the niobium magnesium lead titanate is epitaxially grown on the surface of silicon, the <111> oriented silicon is selected, and the epitaxial film quality is the best. The polarization field strength of the ferroelectric film 113 and the film preparation difficulty are comprehensively considered, and the thickness of the ferroelectric film 113 is preferably 200-500 nm. The ferroelectric thin film 113 has different polarization properties depending on the orientation, and in general, the ferroelectric thin film 113 having <111> orientation has the maximum polarization intensity.
As an example, when a low voltage control signal is input, the current in the p-n junction formed by the p-type doped silicon layer 112 and the n-type doped silicon layer 103 is small, the free carrier concentration is low, the ferroelectric thin film 113 is in a positive polarization state, and negatively charged polarization charges appear on the side close to the p-type doped silicon layer 112, and the polarization field strength of the negatively charged polarization charges is such that the free carrier concentration in the p-type doped silicon layer 112 is reduced; when a high-voltage control signal is input, the current in a p-n junction formed by the p-type doped silicon layer 112 and the n-type doped silicon layer 103 is large, the free carrier concentration is large, the polarization of the ferroelectric thin film 113 is reversed, a positively charged polarization charge appears on one side close to the p-type silicon, and the polarization field strength of the positively charged polarization charge increases the free carrier concentration in the p-type doped silicon layer 112.
In a specific implementation, as shown in fig. 1, the large-bandwidth silicon-based optical modulator 1 of the present embodiment is composed of a single crystal silicon substrate 101, an insulating layer 102, an n-type doped silicon layer 103, n-type heavily doped regions 104 and 105, silicon dioxide layers 106 and 107, a p-type doped silicon layer 112, p-type heavily doped regions 108 and 109, a ferroelectric thin film 113, and metal electrodes 110, 111 and 114, wherein the n-type heavily doped regions 104 and 105 are grounded, and the p-type heavily doped regions 108 and 109 and the ferroelectric thin film 113 are respectively connected to control signals through the metal electrodes 110, 111 and 114. The n-type doped silicon layer 103 has a thickness of 1.5 μm and a doping concentration of 2 × 1016cm-3(ii) a The p-type doped silicon layer 112 is an optical window with a width of 2.8 microns, a height of 1.1 microns and a doping concentration of 4 × 1016cm-3(ii) a The ferroelectric thin film 113 has the same width as the p-type doped silicon layer 112 and a thickness of 300 nm.
In the present embodiment, the p-type doped silicon layer 112 is used as the optical signal transmission region, and the magnitude of the control signal can control the concentration of free carriers in the signal transmission region, thereby controlling the magnitude of the optical signal output. The addition of the ferroelectric film 113 is a key innovation point of the invention, when the signal voltage is lower, the current in the p-n junction is smaller, the free carrier concentration is lower, the ferroelectric film 113 is in a positive polarization state, negatively charged polarization charges appear on one side close to the p-type doped silicon layer 112, and the polarization field strength of the negatively charged polarization charges enables the free carrier concentration in the p-type doped silicon layer 112 to be lower; when the signal voltage is higher, the current in the p-n junction is higher, the free carrier concentration is higher, the polarization of the ferroelectric thin film 113 is reversed, a positively charged polarization charge appears on one side close to the p-type doped silicon layer 112, and the free carrier concentration in the p-type doped silicon layer 112 is higher due to the polarization field strength; thus, under the original signal variation amplitude, the variation range of the free carrier concentration of the optical signal transmission area is expanded through the enhancement of the polarization electric field of the ferroelectric film 113, so that the modulation bandwidth of the optical modulator on the optical signal is increased.
Example 2
As shown in fig. 2, the present embodiment provides an operating state of the large-bandwidth silicon-based optical modulator 1 as in embodiment 1 when the control signal voltage is small. At this time, the ferroelectric thin film 113 is in a positive polarization state, negative polarization charges appear at the contact surface of the ferroelectric polarization layer and the p-type doped silicon layer 112, and free carriers, i.e., electrons, in the p-type doped silicon layer 112 are driven away, so that the free carrier concentration in the p-type doped silicon layer 112 is reduced.
Example 3
As shown in fig. 3, this embodiment provides an operating state of the large-bandwidth silicon-based optical modulator 1 as in embodiment 1 when the control signal voltage is large. When the ferroelectric thin film 113 is in a polarization reversal state, positive polarization charges appear at the contact surface of the ferroelectric polarization layer and the p-type doped silicon layer 112, and the attraction of the polarization charges causes additional electrons to appear in the p-type doped silicon layer 112, so that the free carrier concentration in the p-type doped silicon layer 112 is increased.
Example 4
As shown in fig. 4, the present embodiment provides an optical modulator device including: a light inlet 2; at least two large-bandwidth silicon-based optical modulators 1 as described in embodiment 1, wherein optical input ends of the at least two large-bandwidth silicon-based optical modulators are respectively connected to the optical inlets 2; and the light outlet 3 is connected to the light output end of each large-bandwidth silicon-based optical modulator 1.
For example, the present invention can be applied directly to a silicon-based optical modulator or to both arms of a mach-zehnder optical modulator, and the modulation width of the modulator can be further increased. Fig. 4 shows an application state of the large-bandwidth silicon-based optical modulator 1 of embodiment 1 when used in a mach-zehnder type optical modulator. Light enters from the light entrance 2, is split into two identical beams, enters the light modulator to be modulated respectively, and then is recombined into one beam at the light exit 3. The overall modulation of the light is effected by the two modulators separately, thus increasing the modulation bandwidth.
As described above, the large-bandwidth silicon-based optical modulator 1 of the present invention has the following beneficial effects:
the invention effectively integrates the ferroelectric film 113 with the common silicon-based optical modulator, and greatly improves the variation range and the sensitivity of the carrier concentration in the optical modulator by utilizing the field intensity of the ferroelectric film 113 during polarization, thereby improving the modulation bandwidth of the optical modulator. The invention can be directly used for a silicon-based optical modulator and can also be used for two arms of a Mach-Zehnder type optical modulator, and the modulation width of the modulator can be further increased by the Mach-Zehnder type optical modulator. The invention has simple structure, convenient control and compatible process with CMOS, and is very suitable for industrial popularization. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. A large bandwidth silicon-based optical modulator, comprising:
a substrate and an insulating layer thereon;
an n-type doped silicon layer located over the insulating layer;
a p-type doped silicon layer located over the n-type doped silicon layer;
a ferroelectric thin film located over the p-type doped silicon layer;
the n-type doped silicon layer is grounded, the p-type doped silicon layer is connected with a control signal, and the ferroelectric film is connected with the control signal;
when a low-voltage control signal is input, the current in a p-n junction formed by the p-type doped silicon layer and the n-type doped silicon layer is small, the free carrier concentration is low, the ferroelectric film is in a positive polarization state, negative polarization charges appear on one side close to the p-type doped silicon layer, and the polarization field strength of the ferroelectric film enables the free carrier concentration in the p-type doped silicon layer to be reduced;
when a high-voltage control signal is input, the current in a p-n junction formed by the p-type doped silicon layer and the n-type doped silicon layer is larger, the free carrier concentration is larger, the polarization of the ferroelectric film is reversed, a positively charged polarization charge appears on one side close to the p-type silicon, and the polarization field strength of the ferroelectric film enables the free carrier concentration in the p-type doped silicon layer to be improved.
2. The large bandwidth silicon-based optical modulator of claim 1, wherein the ferroelectric thin film has a thickness of 200 to 500 nm.
3. The large bandwidth silicon-based optical modulator of claim 1 wherein the ferroelectric thin film has an orientation of <111> orientation.
4. The large bandwidth silicon-based optical modulator of claim 1, wherein the ferroelectric thin film is a bismuth ferrite thin film.
5. The large bandwidth silicon-based optical modulator of claim 1, wherein the ferroelectric thin film is a lanthanum manganate thin film.
6. The large bandwidth silicon-based optical modulator of claim 1 wherein the ferroelectric thin film is a lead magnesium niobate titanate thin film.
7. The large bandwidth silicon-based optical modulator of claim 6, wherein the ratio of lead magnesium niobate to lead titanate in the lead magnesium niobate titanate thin film is 60-70: 30-40.
8. The large bandwidth silicon-based optical modulator of claim 6, wherein the p-type doped silicon layer has an orientation of <111> orientation.
9. An optical modulator device, comprising:
a light inlet;
at least two large-bandwidth silicon-based optical modulators according to any one of claims 1 to 8, wherein the optical input ends of the at least two large-bandwidth silicon-based optical modulators are respectively connected with the optical inlets;
and the light outlet is connected with the light output end of each large-bandwidth silicon-based light modulator.
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|---|---|---|---|---|
| US5753300A (en) * | 1995-06-19 | 1998-05-19 | Northwestern University | Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films |
| EP1271221A1 (en) * | 2001-06-28 | 2003-01-02 | Corning O.T.I. S.p.A. | Integrated optical waveguide device |
| US6522793B1 (en) * | 2001-11-21 | 2003-02-18 | Andrei Szilagyi | Low voltage electro-optic modulator with integrated driver |
| JP4775849B2 (en) * | 2006-01-13 | 2011-09-21 | 富士通セミコンダクター株式会社 | SEMICONDUCTOR ELEMENT, SEMICONDUCTOR MEMORY DEVICE USING SAME, DATA WRITE METHOD, DATA READ METHOD, AND MANUFACTURING METHOD THEREOF |
| CN105487263B (en) * | 2014-06-30 | 2018-04-13 | 硅光电科技股份有限公司 | Silicon substrate ridge waveguide modulator and its manufacture method |
| JP2016142755A (en) * | 2015-01-29 | 2016-08-08 | 富士通オプティカルコンポーネンツ株式会社 | Optical modulator |
| WO2016154764A2 (en) * | 2015-04-01 | 2016-10-06 | ETH Zürich | Electrooptic modulator |
| CN105762197B (en) * | 2016-04-08 | 2019-01-08 | 中国科学院上海硅酸盐研究所 | Semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal and its preparation method and application |
| CN105762281A (en) * | 2016-04-15 | 2016-07-13 | 中国科学院上海技术物理研究所 | Ferroelectric local field enhanced two-dimensional semiconductor photoelectric detector and preparation method |
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