CN208805639U - Phase-shifter and silicon-based electro-optical modulator - Google Patents

Phase-shifter and silicon-based electro-optical modulator Download PDF

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Publication number
CN208805639U
CN208805639U CN201821583248.5U CN201821583248U CN208805639U CN 208805639 U CN208805639 U CN 208805639U CN 201821583248 U CN201821583248 U CN 201821583248U CN 208805639 U CN208805639 U CN 208805639U
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silicon
type semiconductor
layer
phase
doping type
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涂芝娟
汪巍
方青
余明斌
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Shanghai Industrial Utechnology Research Institute
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Shanghai New Micro Technology Service Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/05—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect with ferro-electric properties

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

It includes: the first doping type semiconductor layer that the utility model, which provides a kind of phase-shifter and silicon-based electro-optical modulator, phase-shifter,；Second doping type semiconductor layer is intervally arranged with the first doping type semiconductor layer；First medium layer, between the first doping type semiconductor and the second doping type semiconductor layer；Second dielectric layer, between first medium layer and the second doping type semiconductor layer；Insertion material layer, between first medium layer and second dielectric layer, insertion material layer generates negative capacitance effect under the action of external drive voltage, and insertion material layer includes ferroelectric material layer.The phase-shifter of the utility model is by adding the insertion material layer that can produce negative capacitance effect under the action of external drive voltage, negative capacitance effect may make that phase-shifter builtin voltage is amplified, it can reduce the external drive voltage needed for silicon-based electro-optical modulator works normally, the modulation efficiency for greatly improving silicon-based electro-optical modulator reduces the power consumption of silicon-based electro-optical modulator.

Description

Phase-shifter and silicon-based electro-optical modulator
Technical field
The utility model belongs to semiconductor photoelectric device technical field, more particularly to a kind of phase-shifter and silicon-based electro-optic tune Device processed.
Background technique
Information age, with the fast development of the technologies such as internet and broadband services, the transmission and processing of information are in people Daily life in play increasingly important role, people are also just showing the capacity requirement that information communicates explosive Growing trend.Therefore, low cost, the transmission of the information of low-power consumption and processing system how to be realized, people's grinding all the time is become Study carefully hot spot.In recent years, Si-based optoelectronics with it there are the advantages such as low cost, High Density Integration to be rapidly developed, and by Step is used widely in fields such as optic communication, light networks.
As one of core photoelectric device, the function of silicon-based electro-optical modulator is to complete the conversion of electric signal to optical signal, Its realization is the premise that high speed information is transmitted and handled on optical-elec-tronic integrated chip.Silicon-based electro-optical modulator is based primarily upon load The modulation to optical signal that sub- effect of dispersion is realized is flowed, the overlapping region size meeting of light field and carrier concentration variation in phase-shifter Limit the modulation efficiency of modulator.Due to the effective mass and mobility of carrier in used phase-shifter structure and silicon materials Limitation drive its normal work will band so that the modulation efficiency for the silicon-based electro-optical modulator reported at present is all relatively low Carry out biggish power consumption, is not able to satisfy the needs of system worked well.There is presently no the effective ways for being able to solve this problem.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of phase-shifter and silicon substrate electricity Optical modulator, relatively low for solving modulation efficiency existing for silicon-based electro-optical modulator in the prior art, power consumption is larger, cannot Meet the problem of needs of system worked well.
In order to achieve the above objects and other related objects, the utility model provides a kind of phase-shifter, and the phase-shifter includes:
First doping type semiconductor layer；
Second doping type semiconductor layer is intervally arranged with the first doping type semiconductor layer；
First medium layer, between the first doping type semiconductor and the second doping type semiconductor layer；
Second dielectric layer, between the first medium layer and the second doping type semiconductor layer；
Insertion material layer, between the first medium layer and the second dielectric layer, the insertion material layer is outside Negative capacitance effect is generated under the action of portion's driving voltage,
The insertion material layer includes ferroelectric material layer.
As a kind of preferred embodiment of the utility model, the first doping type semiconductor layer includes the first doping type Silicon layer；The second doping type semiconductor layer includes the silicon layer of the second doping type；The first medium layer includes oxidation Silicon layer；The second dielectric layer includes silicon oxide layer.
As a kind of preferred embodiment of the utility model, the first doping type semiconductor layer includes n type semiconductor layer； The second doping type semiconductor layer includes p type semiconductor layer.
As a kind of preferred embodiment of the utility model, the first doping type semiconductor layer includes p type semiconductor layer； The second doping type semiconductor layer includes n type semiconductor layer.
As a kind of preferred embodiment of the utility model, the material of the ferroelectric material layer includes hafnium silicon oxide, hafnium oxide At least one of zirconium, hafnium oxide yttrium, barium titanate, bismuth ferrite, lanthanum manganate and lead magnesium niobate titanate.
As a kind of preferred embodiment of the utility model, the ferroelectric material layer includes using atom layer deposition process, magnetic Control the material that sputtering technology, plasma enhanced chemical vapor deposition technique or Metallo-Organic Chemical Vapor depositing operation are formed Layer.
The utility model also provides a kind of silicon-based electro-optical modulator, the silicon-based electro-optical modulator include as it is above-mentioned either one Phase-shifter described in case.
As a kind of preferred embodiment of the utility model, the silicon-based electro-optical modulator includes two phase-shifters, institute State silicon-based electro-optical modulator further include:
Beam splitter, the beam splitter include an input terminal and two output ends, two output ends point of the beam splitter One end not with two phase-shifters connects one to one；
Bundling device, the bundling device include two input terminals and an output end；Two input terminals of the bundling device point It does not connect one to one with two phase-shifters far from one end of the beam splitter.
As a kind of preferred embodiment of the utility model, the silicon-based electro-optical modulator further include:
Photo-coupler is inputted, the output end of the input photo-coupler is connected with the input terminal of the beam splitter；
Output optical coupler, the input terminal of the output optical coupler are connected with the output end of the bundling device.
As a kind of preferred embodiment of the utility model, the input photo-coupler includes horizontal end face Coupled Passive Waveguide Structure Or vertical coupled optical grating construction, the output optical coupler include horizontal end face Coupled Passive Waveguide Structure or vertical coupled grating knot Structure.
As a kind of preferred embodiment of the utility model, the silicon-based electro-optical modulator includes the modulation of silicon substrate Mach-Zehnder Device.
As described above, the phase-shifter and silicon-based electro-optical modulator of the utility model, have the advantages that
The phase-shifter of the utility model between first medium layer and second dielectric layer by adding in external drive voltage Under the action of can produce the insertion material layer of negative capacitance effect, negative capacitance effect may make that phase-shifter builtin voltage is put Greatly, when the phase-shifter is used for silicon-based electro-optical modulator, it can reduce the outside needed for silicon-based electro-optical modulator works normally Driving voltage greatly improves the modulation efficiency of silicon-based electro-optical modulator, reduces the power consumption of silicon-based electro-optical modulator；
Being equipped with inside phase-shifter in the silicon-based electro-optical modulator of the utility model can under the action of external drive voltage To generate the insertion material layer of negative capacitance effect, negative capacitance effect may make that phase-shifter builtin voltage is amplified, can reduce Silicon-based electro-optical modulator works normally required external drive voltage, greatly improves the modulation efficiency of silicon-based electro-optical modulator, drops The power consumption of low silicon-based electro-optical modulator；Meanwhile the manufacture craft of the silicon-based electro-optical modulator of the utility model and existing CMOS Process compatible is very suitable to scale volume production.
Detailed description of the invention
Fig. 1 is shown as the cross section structure schematic diagram of the phase-shifter provided in the utility model embodiment one.
Fig. 2 and Fig. 3 is shown as the structural block diagram of the silicon-based electro-optical modulator provided in the utility model embodiment two.
Component label instructions
10 phase-shifters
101 first doping type semiconductor layers
102 second doping type semiconductor layers
103 first medium layers
104 second dielectric layer
105 insertion material layers
11 beam splitters
12 bundling devices
13 input photo-couplers
14 output optical couplers
Specific embodiment
The embodiments of the present invention is illustrated by particular specific embodiment below, those skilled in the art can be by this Content disclosed by specification understands other advantages and effect of the utility model easily.
It please refers to Fig.1 to Fig.3.It should be clear that this specification structure depicted in this specification institute accompanying drawings, ratio, size etc., only to Cooperate the revealed content of specification, so that those skilled in the art understands and reads, is not intended to limit the utility model Enforceable qualifications, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or size Adjustment, in the case where not influencing the effect of the utility model can be generated and the purpose that can reach, should all still fall in the utility model Revealed technology contents obtain in the range of capable of covering.Meanwhile in this specification it is cited as "upper", "lower", " left side ", The term on " right side ", " centre " and " one " etc. is merely convenient to being illustrated for narration, rather than enforceable to limit the utility model Range, relativeness are altered or modified, under the content of no substantial changes in technology, enforceable when being also considered as the utility model Scope.
Embodiment one
Referring to Fig. 1, the utility model provides a kind of phase-shifter 10, the phase-shifter 10 includes:
First doping type semiconductor layer 101；
Second doping type semiconductor layer 102, the second doping type semiconductor layer 102 and first doping type Semiconductor layer 101 is intervally arranged, i.e., the described second doping type semiconductor layer 102 can be with the first doping type semiconductor Layer 101 is parallel, and has between the second doping type semiconductor layer 102 and the first doping type semiconductor 101 Gap；
First medium layer 103, the first medium layer 103 are located at the first doping type semiconductor 101 and described the Between two doping type semiconductor layers 102；
Second dielectric layer 104, the second dielectric layer 104 are located at the first medium layer 103 and the second doping class Between type semiconductor layer 102；
Insertion material layer 105, the insertion material layer 105 are located at the first medium layer 103 and the second dielectric layer Between 104, the insertion material layer 105 generates negative capacitance effect, the insertion material layer under the action of external drive voltage 105 include ferroelectric material layer (not shown).
Specifically, as shown in Figure 1, the first doping type semiconductor layer 101, the first medium layer 103, it is described insert Entering material layer 105, the second dielectric layer 104 and the second doping type semiconductor 102 can be sequentially stacked together.This Phase-shifter 10 described in utility model between the first medium layer 103 and the second dielectric layer 104 by adding outside The insertion material layer 105 that can produce negative capacitance effect under the action of portion's driving voltage, can introduce voltage amplification mechanism, The negative capacitance effect that the insertion material layer 105 generates under the action of external drive voltage may make inside the phase-shifter 10 Voltage is amplified, and when the phase-shifter 10 is used for silicon-based electro-optical modulator, can reduce the silicon-based electro-optical modulator just Often external drive voltage needed for work, greatly improves the modulation efficiency of the silicon-based electro-optical modulator, reduces the silicon substrate electricity The power consumption of optical modulator.
As an example, as an example, the first doping type semiconductor layer 101 may include but be not limited only to first and mix The silicon layer of miscellany type；The second doping type semiconductor layer 102 may include but be not limited only to the silicon layer of the second doping type； The first medium layer 103 may include but be not limited only to silicon oxide layer；The second dielectric layer 104 may include but not only limit In silicon oxide layer, specifically, the first medium layer 103 and the second dielectric layer 104 may each comprise silicon dioxide layer, It may include other dielectric materials such as high-g value etc..
As an example, the first doping type is different from the second doping type, i.e., the described first doping type semiconductor layer 101 It is to adulterate the different semiconductor layer of property from the second doping type semiconductor layer 102.
In one example, the first doping type semiconductor layer 101 may include n type semiconductor layer, at this point, described Two doping type semiconductor layers 102 may include p type semiconductor layer.
In another example, the first doping type semiconductor layer 101 may include p type semiconductor layer, at this point, described Second doping type semiconductor layer 102 may include n type semiconductor layer.
As an example, the material of the ferroelectric material layer can include but is not limited to hafnium silicon oxide (HfSiO), hafnium oxide zirconium (HfZrO2), hafnium oxide yttrium (Y-HfO2), barium titanate, bismuth ferrite, at least one of lanthanum manganate and lead magnesium niobate titanate, i.e., it is described The material of ferroelectric material layer can be hafnium silicon oxide (HfSiO), hafnium oxide zirconium (HfZrO2), hafnium oxide yttrium (Y-HfO2), metatitanic acid Barium, bismuth ferrite, lanthanum manganate or lead magnesium niobate titanate, or hafnium silicon oxide (HfSiO), hafnium oxide zirconium (HfZrO2), hafnium oxide Yttrium (Y-HfO2), barium titanate, bismuth ferrite, combination at least both any in lanthanum manganate and lead magnesium niobate titanate.
As an example, the insertion material layer 105 may include using atomic deposition (ALD) technique, magnetron sputtering technique, The material layer that plasma enhanced chemical vapor deposition technique or mocvd process are formed.Using atom Layer depositing operation forms the insertion material layer 105, it can be ensured that the preparation process of the phase-shifter and existing CMOS technology It is compatible, it is convenient for mass production.
Embodiment two
Incorporated by reference to Fig. 1 referring to Fig.2, the utility model also provides a kind of silicon-based electro-optical modulator, the silicon-based electro-optic modulation Device includes at least one phase-shifter 10 as described in embodiment one.The specific structure of the phase-shifter 10 please refers to embodiment One, it is not repeated herein.
As an example, the silicon-based electro-optical modulator may include two phase-shifters 10, two phase-shifters 10 It can be used as the modulation arm of the silicon-based electro-optical modulator.
As an example, as shown in Fig. 2, the silicon-based electro-optical modulator further include:
Beam splitter 11, the beam splitter 11 include an input terminal and two output ends, and two of the beam splitter 11 are defeated The one end of outlet respectively with two phase-shifters 10 connects one to one, i.e., an output end of the described beam splitter 11 and an institute The one end for stating phase-shifter 10 is connected, and another output end of the beam splitter 11 is connected with one end of another phase-shifter 10 It connects；
Bundling device 12, the bundling device 12 include two input terminals and an output end；Two of the bundling device 12 are defeated Enter end to connect one to one with two phase-shifters 10 far from one end of the beam splitter 11 respectively, i.e., the described bundling device 12 One input terminal is connected with a phase-shifter 10 far from one end of the beam splitter 11, another input of the bundling device 12 End is connected with another phase-shifter 10 far from one end of the beam splitter 11.The beam splitter 11 and the bundling device 12 It specific structure and working principle dawn known to those skilled in the art, is not repeated herein.
As an example, referring to Fig. 3, the silicon-based electro-optical modulator further include:
Photo-coupler 13 is inputted, the input photo-coupler 13 includes input terminal and output end, the input photo-coupler 13 output end is connected with the input terminal of the beam splitter 11；
Output optical coupler 14, the output optical coupler 14 include input terminal and output end, the output optical coupler 1 Input terminal be connected with the output end of the bundling device 12.The input photo-coupler 13 and the output optical coupler 14 It specific structure and working principle dawn known to those skilled in the art, is not repeated herein.
As an example, the input photo-coupler 13 may include horizontal end face Coupled Passive Waveguide Structure or vertical coupled grating Structure, the output optical coupler 14 may include horizontal end face Coupled Passive Waveguide Structure or vertical coupled optical grating construction.
As an example, the silicon-based electro-optical modulator may include silicon substrate Mach-Zehnder modulator.
In conclusion it includes: first that the utility model, which provides a kind of phase-shifter and silicon-based electro-optical modulator, the phase-shifter, Doping type semiconductor layer；Second doping type semiconductor layer is intervally arranged with the first doping type semiconductor layer；First Dielectric layer, between the first doping type semiconductor and the second doping type semiconductor layer；Second dielectric layer, position Between the first medium layer and the second doping type semiconductor layer；Insertion material layer is located at the first medium layer Between the second dielectric layer, the insertion material layer generates negative capacitance effect under the action of external drive voltage.This reality It can be with by being added between first medium layer and second dielectric layer under the action of external drive voltage with novel phase-shifter The insertion material layer of negative capacitance effect is generated, negative capacitance effect may make that phase-shifter builtin voltage is amplified, when the phase shift When device is used for silicon-based electro-optical modulator, the external drive voltage needed for silicon-based electro-optical modulator works normally can reduce, significantly The modulation efficiency for improving silicon-based electro-optical modulator, reduces the power consumption of silicon-based electro-optical modulator；The silicon-based electro-optic tune of the utility model It is equipped with the insertion material layer that can produce negative capacitance effect under the action of external drive voltage inside phase-shifter in device processed, bears Capacity effect may make that phase-shifter builtin voltage is amplified, and can reduce the outside needed for silicon-based electro-optical modulator works normally Driving voltage greatly improves the modulation efficiency of silicon-based electro-optical modulator, reduces the power consumption of silicon-based electro-optical modulator；Meanwhile this reality It is compatible with existing CMOS technology with the manufacture craft of novel silicon-based electro-optical modulator, it is very suitable to scale volume production.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.

Claims (11)

1. a kind of phase-shifter, which is characterized in that the phase-shifter includes:
First doping type semiconductor layer；
Second doping type semiconductor layer is intervally arranged with the first doping type semiconductor layer；
First medium layer, between the first doping type semiconductor and the second doping type semiconductor layer；
Second dielectric layer, between the first medium layer and the second doping type semiconductor layer；
Insertion material layer, between the first medium layer and the second dielectric layer, the insertion material layer drives in outside Negative capacitance effect is generated under the action of dynamic voltage；
The insertion material layer includes ferroelectric material layer.
2. phase-shifter according to claim 1, which is characterized in that the first doping type semiconductor layer is mixed including first The silicon layer of miscellany type；The second doping type semiconductor layer includes the silicon layer of the second doping type；The first medium layer packet Include silicon oxide layer；The second dielectric layer includes silicon oxide layer.
3. phase-shifter according to claim 1 or 2, which is characterized in that the first doping type semiconductor layer includes N-type Semiconductor layer；The second doping type semiconductor layer includes p type semiconductor layer.
4. phase-shifter according to claim 1 or 2, which is characterized in that the first doping type semiconductor layer includes p-type Semiconductor layer；The second doping type semiconductor layer includes n type semiconductor layer.
5. phase-shifter according to claim 1, which is characterized in that the material of the ferroelectric material layer include hafnium silicon oxide, At least one of hafnium oxide zirconium, hafnium oxide yttrium, barium titanate, bismuth ferrite, lanthanum manganate and lead magnesium niobate titanate.
6. phase-shifter according to claim 1, which is characterized in that the insertion material layer includes using atomic layer deposition work Skill, magnetron sputtering technique, plasma enhanced chemical vapor deposition technique or mocvd process are formed Material layer.
7. a kind of silicon-based electro-optical modulator, which is characterized in that the silicon-based electro-optical modulator includes: as appointed in claim 1 to 6 Phase-shifter described in one.
8. silicon-based electro-optical modulator according to claim 7, which is characterized in that the silicon-based electro-optical modulator includes two The phase-shifter, the silicon-based electro-optical modulator further include:
Beam splitter, the beam splitter include an input terminal and two output ends, two output ends of the beam splitter respectively with One end of two phase-shifters connects one to one；
Bundling device, the bundling device include two input terminals and an output end；Two input terminals of the bundling device respectively with Two phase-shifters connect one to one far from one end of the beam splitter.
9. silicon-based electro-optical modulator according to claim 8, which is characterized in that the silicon-based electro-optical modulator further include:
Photo-coupler is inputted, the output end of the input photo-coupler is connected with the input terminal of the beam splitter；
Output optical coupler, the input terminal of the output optical coupler are connected with the output end of the bundling device.
10. silicon-based electro-optical modulator according to claim 9, which is characterized in that the input photo-coupler includes level End coupling waveguiding structure or vertical coupled optical grating construction, the output optical coupler include horizontal end face Coupled Passive Waveguide Structure or Vertical coupled optical grating construction.
11. silicon-based electro-optical modulator according to claim 7, which is characterized in that the silicon-based electro-optical modulator includes silicon Base Mach-Zehnder modulator.
CN201821583248.5U 2018-09-27 2018-09-27 Phase-shifter and silicon-based electro-optical modulator Active CN208805639U (en)

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PCT/CN2019/070517 WO2020062705A1 (en) 2018-09-27 2019-01-05 Phase shifter and silicon-based electro-optical modulator

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CN113574734A (en) * 2019-11-29 2021-10-29 京东方科技集团股份有限公司 Phase shifter, manufacturing method and driving method thereof, and electronic device

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CN2167388Y (en) * 1993-07-27 1994-06-01 四川大学 Thin-film type ferro-electric integral space light adjusting device
FR2748129B1 (en) * 1996-04-29 1998-06-12 Alsthom Cge Alcatel ELECTRO-OPTICAL MODULATOR WITH QUANTUM WELLS
CN106405976A (en) * 2016-10-14 2017-02-15 电子科技大学 Terahertz wave modulator based on MnZn ferrite film
CN108153001B (en) * 2016-12-05 2021-04-27 上海新微科技服务有限公司 Large-bandwidth silicon-based optical modulator
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CN113574734A (en) * 2019-11-29 2021-10-29 京东方科技集团股份有限公司 Phase shifter, manufacturing method and driving method thereof, and electronic device
CN113574734B (en) * 2019-11-29 2022-09-09 京东方科技集团股份有限公司 Phase shifter, manufacturing method and driving method thereof, and electronic device
US11811121B2 (en) 2019-11-29 2023-11-07 Beijing Boe Sensor Technology Co., Ltd. Electronic device comprising a dielectric substrate having a voltage adjustable phase shifter disposed with respect to the substrate and a manufacturing method

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