CN112363331A - Silicon-based lithium niobate mixed electro-optical modulator - Google Patents

Silicon-based lithium niobate mixed electro-optical modulator Download PDF

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CN112363331A
CN112363331A CN202010922441.2A CN202010922441A CN112363331A CN 112363331 A CN112363331 A CN 112363331A CN 202010922441 A CN202010922441 A CN 202010922441A CN 112363331 A CN112363331 A CN 112363331A
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CN112363331B (en
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戴道锌
潘炳呈
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Zhejiang University ZJU
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12142—Modulator

Abstract

The invention discloses a silicon-based lithium niobate hybrid electro-optical modulator. The transmission waveguide and the electro-optical modulation waveguide in the electro-optical modulator are of a horizontal slot waveguide structure, an optical field is transmitted in the waveguide in a TM mode, the modulation electrode is arranged beside the electro-optical modulation waveguide and can form electric connection, and an electric field is applied to the electro-optical modulation waveguide by the modulation electrode to realize the modulation of light intensity or phase; the silicon-lithium niobate-silicon horizontal slot waveguide structure is a three-layer waveguide structure which is formed by an upper flat plate and a lower flat plate which are made of silicon, and a middle slot which is made of lithium niobate, wherein the middle slot is a structure which is connected between the upper flat plate and the lower flat plate and has a trapezoidal section, and the lithium niobate material of the slot is in a z-tangential direction, namely a extraordinary optical axis of the lithium niobate material is vertical to a light field transmission surface. The invention is used for electro-optic phase modulation and electro-optic intensity modulation in an optical communication system, and has the advantages of large modulation bandwidth, low working voltage, high modulation efficiency, small device size, simple structure, simple design, simple and convenient process and the like.

Description

Silicon-based lithium niobate mixed electro-optical modulator
Technical Field
The invention belongs to the technical field of optical communication, and relates to an electro-optical modulator which is suitable for modulating optical phase and intensity in an optical communication system, in particular to a silicon-based lithium niobate mixed low-bias large-bandwidth electro-optical modulator.
Background
The human society of the twenty-first century has advanced into the information age, and the rapid development of internet technology has led to a new technological revolution, with an exponential increase in the demand for communication capacity. The optical communication technology has become the mainstream technology of the current communication by virtue of the advantages of high bandwidth, low crosstalk, interference resistance, low loss and the like. The photoelectric device is used as a core device in the optical communication technology, and performance indexes of the photoelectric device are difficult to meet the increasing requirement of ultra-high speed transmission, and gradually become a bottleneck of the development of the ultra-large capacity optical communication technology. Among the various solutions that have been proposed, silicon-based photonic integrated circuits have received great attention since their concepts were proposed, and considerable progress has been made in the performance of individual devices, especially in recent years due to the maturity of silicon photonics technology, which has attracted widespread attention in the related industries all over the world. For passive photonic integrated devices, silicon photonics has realized various types of high performance devices by virtue of its innate advantages. However, for active devices, silicon materials are limited by their own characteristics. The electro-optical modulator is one of the most important active devices, has the function of realizing the conversion from an electric signal to an optical signal, is a core element of a transmitter, and is a key technology which is needed to be broken through urgently in a silicon-based integrated optoelectronic device.
One of the most effective methods for realizing high-speed electro-optical modulation is to use the electro-optical effect, that is, in the electro-optical material, the refractive index variation is in linear relation with the variation of the external electric field. However, the linear electro-optic effect in the silicon material is very small, and thus the silicon material cannot be directly used for realizing a high-speed optical modulator based on the electro-optic effect of the silicon material. Another approach is to use a technique based on the effect of plasma dispersion, namely: the carrier concentration in a semiconductor is regulated and controlled through an external electric field, so that the real part and the imaginary part of the refractive index of the semiconductor material are changed, and the light modulation function is realized. The carrier concentration regulation in the silicon material is a nanosecond-picosecond magnitude process, and high-speed optical modulation of dozens of Gbps can be realized. For the reported all-silicon modulator based on the plasma dispersion effect, the size is 10mm2The half-wave voltage is about 8V, the bias voltage is about 5V, more thermo-optic phase shifters are needed for auxiliary work, and the defects of large device size, high power consumption, high bias voltage and the like still exist. Therefore, the silicon modulator has a large difference from the existing commercial discrete electro-optical modulator based on lithium niobate by comprehensively considering the indexes of device size, power consumption, driving voltage, insertion loss and the like。
Another potential modulator implementation approach in silicon photonic integrated circuits is to combine an electro-optic material (e.g., the most commonly used electro-optic material, lithium niobate, has been widely used in commercially available discrete electro-optic modulator devices) with a silicon nano-waveguide. Lithium niobate is an electro-optical material commonly used on high-speed electro-optical modulators, and in recent years, the commercialization of lithium niobate thin films enables the lithium niobate material to be conveniently processed on optical integrated platforms such as SOI (silicon on insulator), and the lithium niobate thin film is very suitable for manufacturing modulators with low working voltage, high modulation efficiency and small device size. Although there are some reports related to silicon-based electro-optical modulators, the silicon-based electro-optical modulator is still a breakthrough in single performance index (modulation rate/bandwidth, operating voltage, device size), and there are still many shortcomings in overall performance, so that the silicon-based electro-optical modulator with large modulation bandwidth, low operating voltage, high modulation efficiency and small device size is still a challenge.
Disclosure of Invention
The invention aims to provide a silicon-based lithium niobate mixed low-bias large-bandwidth electro-optical modulator, which can realize smaller driving voltage, more compact size and larger modulation bandwidth, has the advantages of large modulation bandwidth, low working voltage, high modulation efficiency, small device size, simple structure, simple and easy design, simple and convenient process and the like, can be used for electro-optical phase modulation and electro-optical intensity modulation in an optical communication system, and plays an important role in forming a loop by a silicon photonic.
The technical scheme adopted by the invention is as follows:
the transmission waveguide and the electro-optical modulation waveguide in the electro-optical modulator are both silicon-lithium niobate-silicon horizontal slot waveguide structures, an optical field is transmitted in the waveguide in a TM mode, the modulation electrode is arranged beside the electro-optical modulation waveguide and can form electric connection, and the modulation electrode is used for applying an electric field to the electro-optical modulation waveguide to realize modulation of light intensity or phase.
The silicon-lithium niobate-silicon horizontal slot waveguide structure is a three-layer waveguide structure formed by an upper flat plate and a lower flat plate which are made of silicon, and a middle slot made of lithium niobate, wherein the width of the upper flat plate is smaller than that of the lower flat plate, the middle slot is a structure which is connected between the upper flat plate and the lower flat plate and has a trapezoidal section, and the lithium niobate material of the slot is in a z-tangential direction, namely the extraordinary optical axis of the lithium niobate material is vertical to a light field transmission surface.
In the horizontal slot waveguide structure, silicon materials of the upper flat plate and the lower flat plate are doped with n-type or p-type to increase the conductivity of the silicon materials.
The modulation electrodes are positioned on the side of the horizontal slot waveguide structure, the upper flat plate and the lower flat plate of the electro-optical modulation waveguide extend towards the two sides of the horizontal slot waveguide structure and are connected to the modulation electrodes on the side of the two sides of the horizontal slot waveguide structure respectively, and the modulation electrodes are directly and electrically connected with the side surfaces of the upper flat plate/the lower flat plate or are connected through conductive material points.
In the horizontal slot waveguide structure, the parts of the upper flat plate and the lower flat plate extending to two sides are partially etched.
The horizontal slot waveguide structure is only arranged on the lower cladding layer, the upper cladding layer is not selected, and the lower cladding layer is made of silicon dioxide low-refractive-index materials.
The electro-optical modulator is a phase modulator with an electro-optical modulation waveguide, a Mach-Zehnder electro-optical intensity modulator and a micro-ring resonant cavity electro-optical intensity modulator.
The phase modulator with the electro-optical modulation waveguide comprises an input waveguide, an electro-optical modulation waveguide, a first modulation electrode, a second modulation electrode and an output waveguide; the input waveguide, the electro-optic modulation waveguide and the output waveguide are sequentially connected along a transmission direction, the first modulation electrode and the second modulation electrode are respectively positioned on two sides of the electro-optic modulation waveguide and are respectively in conductive connection with the electro-optic modulation waveguide, the input waveguide and the output waveguide are both transmission waveguides, and the first modulation electrode and the second modulation electrode are both modulation electrodes.
The Mach-Zehnder type electro-optic intensity modulator with the electro-optic modulation waveguide comprises an input waveguide, an input power beam splitter, a first connecting waveguide, a second connecting waveguide, a first electro-optic modulation waveguide, a second electro-optic modulation waveguide, a first modulation electrode, a second modulation electrode, a third connecting waveguide, a fourth connecting waveguide, an output power beam combiner and an output waveguide; the output end of the input waveguide is connected with the input port of the input power beam splitter, two output ports of the input power beam splitter are respectively connected with the input ends of a first connecting waveguide and a second connecting waveguide, the output end of the first connecting waveguide is connected with the input end of a third connecting waveguide through a first electro-optical modulation waveguide, the output end of the second connecting waveguide is connected with the input end of a fourth connecting waveguide through a second electro-optical modulation waveguide, the output ends of the third connecting waveguide and the fourth connecting waveguide are respectively connected with two input ports of the output power beam combiner, and the output port of the output power beam combiner is connected with the output waveguide; the first modulation electrode and the third modulation electrode are respectively positioned at two outer sides of the first electro-optic modulation waveguide and the second electro-optic modulation waveguide and are respectively in conductive connection with the first electro-optic modulation waveguide and the second electro-optic modulation waveguide; meanwhile, the second modulation electrode is positioned between the first electro-optic modulation waveguide and the second electro-optic modulation waveguide and is respectively connected with the first electro-optic modulation waveguide and the second electro-optic modulation waveguide; the input power beam splitter and the output power beam combiner adopt Y-shaped waveguides, the input waveguide, the input power beam splitter, the first connecting waveguide, the second connecting waveguide, the third connecting waveguide, the fourth connecting waveguide, the output power beam combiner and the output waveguide are all transmission waveguides, the first modulation electrode, the second modulation electrode and the third modulation electrode are modulation electrodes, and the first electro-optic modulation waveguide and the second electro-optic modulation waveguide are all electro-optic modulation waveguides.
The micro-ring resonant cavity type electro-optic intensity modulator with the electro-optic modulation waveguide comprises an input waveguide, a first coupling waveguide, a second coupling waveguide, the electro-optic modulation waveguide, a first modulation electrode, a second modulation electrode and an output waveguide; the input waveguide, the first coupling waveguide and the output waveguide are sequentially connected, the first coupling waveguide and the second coupling waveguide are arranged in a coupling mode, and the second coupling waveguide and the electro-optical modulation waveguide are connected end to form a micro-ring resonant cavity; a first modulation electrode is arranged in the micro-ring resonant cavity, a second modulation electrode is arranged on the outer side of the electro-optical modulation waveguide, and the first modulation electrode and the second modulation electrode are both in conductive connection with the electro-optical modulation waveguide; the input waveguide, the first coupling waveguide, the second coupling waveguide and the output waveguide are transmission waveguides, and the first modulation electrode and the second modulation electrode are modulation electrodes.
The invention has the beneficial effects that:
the invention has simple structure, simple design and simple and convenient process, and is basically compatible with the mature CMOS (complementary metal oxide semiconductor) process. In terms of performance, most of light energy in the waveguide structure of the horizontal slot is distributed in the lithium niobate, and compared with the common silicon nanowire optical waveguide, the effect of light and an electro-optical material is enhanced. Meanwhile, the distance between the slots is very small and is as small as 300nm, so that the modulation electric field intensity under the same voltage condition is increased in comparison with a lithium niobate waveguide.
Meanwhile, the electro-optical modulator can realize extremely low working voltage and extremely small device size (V) due to the higher electro-optical coefficient of the lithium niobate materialπL ═ 0.1V · cm), far superior to the silicon-based plasma dispersion effect electro-optic modulators in the background introduction, and most of the silicon-organic hybrid electro-optic modulators already reported.
The electrode structure has a small RC constant, and can realize a very large modulation bandwidth (the 3dB bandwidth is 137GHz), which is larger than the 3dB bandwidth of dozens of to dozens of GHz of most reported modulators.
Compared with the prior electro-optical modulator introduced in the background, the invention can realize lower working voltage, smaller device size, larger modulation bandwidth and higher modulation efficiency, and simultaneously, the manufacturing process of the invention can be compatible with the prior mature CMOS process, and has the advantages of simple structure, simple design, simple and convenient process and the like.
Drawings
Fig. 1 is a schematic diagram of a high-speed electro-optic phase modulator using a horizontal slot waveguide structure according to the present invention.
Fig. 2 is a schematic diagram of a mach-zehnder electro-optic intensity modulator employing a horizontal slot waveguide structure according to the present invention.
FIG. 3 is a schematic diagram of a micro-ring resonator electro-optic intensity modulator employing a horizontal slot waveguide structure according to the present invention.
Fig. 4 is a schematic cross-sectional view of a horizontal slot waveguide structure having a horizontal slot waveguide structure of the present invention.
FIG. 5 is a schematic cross-sectional view of the GS electrode loading mode in the high-speed electro-optic phase modulator and the micro-ring resonant cavity type electro-optic intensity modulator using the horizontal slot waveguide structure according to the present invention.
Fig. 6 is a schematic cross-sectional view of the loading of the GSG electrode in a mach-zehnder electro-optic intensity modulator employing a horizontal slot waveguide structure according to the present invention.
Fig. 7 is a schematic cross-sectional view of a coupling region of a micro-ring resonator-type electro-optic intensity modulator employing a horizontal slot waveguide structure according to the present invention.
Fig. 8 is a mode field distribution for the present invention using a horizontal slot waveguide.
In fig. 1: 1-input waveguide, 4-electro-optical modulation waveguide, 5 a-first modulation electrode, 5 b-second modulation electrode, 8-output waveguide.
In fig. 2: the power splitting device comprises a 1-input waveguide, a 2-input power beam splitter, a 3 a-first connecting waveguide, a 3 b-second connecting waveguide, a 4 a-first electro-optical modulation waveguide, a 4 b-second electro-optical modulation waveguide, a 5 a-first modulation electrode, a 5 b-second modulation electrode, a 5 c-third modulation electrode, a 6 a-third connecting waveguide, a 6 b-fourth connecting waveguide, a 7-output power beam combiner and an 8-output waveguide.
In fig. 3: 1-input waveguide, 9 a-first coupling waveguide, 9 b-second coupling waveguide, 4-electro-optical modulation waveguide, 5 a-first modulation electrode, 5 b-second modulation electrode, 8-output waveguide.
Detailed Description
The invention is further illustrated by the following figures and examples.
As shown in fig. 1 to 3, the electro-optical modulator is a phase modulator having an electro-optical modulation waveguide, a mach-zehnder type electro-optical intensity modulator, or a micro-ring resonator type electro-optical intensity modulator.
As shown in fig. 1, the phase modulator with the electro-optical modulation waveguide includes an input waveguide 1, an electro-optical modulation waveguide 4, a first modulation electrode 5a, a second modulation electrode 5b, and an output waveguide 8; the input waveguide 1, the electro-optical modulation waveguide 4 and the output waveguide are sequentially connected 8 along a transmission direction, a first modulation electrode 5a and a second modulation electrode 5b are respectively positioned on two sides of the electro-optical modulation waveguide 4 and are respectively electrically connected with the electro-optical modulation waveguide 4, the input waveguide 1 and the output waveguide 8 are transmission waveguides, and the first modulation electrode 5a and the second modulation electrode 5b are modulation electrodes.
As shown in fig. 2, the mach-zehnder electro-optic intensity modulator with electro-optic modulation waveguide includes an input waveguide 1, an input power beam splitter 2, a first connecting waveguide 3a, a second connecting waveguide 3b, a first electro-optic modulation waveguide 4a, a second electro-optic modulation waveguide 4b, a first modulation electrode 5a, a second modulation electrode 5b, a third modulation electrode 5c, a third connecting waveguide 6a, a fourth connecting waveguide 6b, an output power beam combiner 7 and an output waveguide 8; the output end of the input waveguide 1 is connected with the input port of the input power beam splitter 2, two output ports of the input power beam splitter 2 are respectively connected with the input ends of a first connecting waveguide 3a and a second connecting waveguide 3b, the output end of the first connecting waveguide 3a is connected with the input end of a third connecting waveguide 6a through a first electro-optical modulation waveguide 4a, the output end of the second connecting waveguide 3b is connected with the input end of a fourth connecting waveguide 6b through a second electro-optical modulation waveguide 4b, the output ends of the third connecting waveguide 6a and the fourth connecting waveguide 6b are respectively connected with two input ports of an output power beam combiner 7, and the output port of the output power beam combiner 7 is connected with an output waveguide 8; the first modulation electrode 5a and the third modulation electrode 5c are respectively positioned at two outer sides of the first electro-optical modulation waveguide 4a and the second electro-optical modulation waveguide 4b and are respectively electrically connected with the first electro-optical modulation waveguide 4a and the second electro-optical modulation waveguide 4 b; meanwhile, the second modulation electrode 5b is positioned between the first electro-optical modulation waveguide 4a and the second electro-optical modulation waveguide 4b and is respectively electrically connected with the first electro-optical modulation waveguide 4a and the second electro-optical modulation waveguide 4 b; the input power beam splitter 2 and the output power beam combiner 7 adopt Y-shaped waveguides, the input waveguide 1, the input power beam splitter 2, the first connecting waveguide 3a, the second connecting waveguide 3b, the third connecting waveguide 6a, the fourth connecting waveguide 6b, the output power beam combiner 7 and the output waveguide 8 are all transmission waveguides, the first modulation electrode 5a, the second modulation electrode 5b and the third modulation electrode 5c are all modulation electrodes, and the first electro-optical modulation waveguide 4a and the second electro-optical modulation waveguide 4b are all electro-optical modulation waveguides.
As shown in fig. 3, the micro-ring resonator electro-optical intensity modulator with electro-optical modulation waveguide comprises an input waveguide 1, a first coupling waveguide 9a, a second coupling waveguide 9b, an electro-optical modulation waveguide 4, a first modulation electrode 5a, a second modulation electrode 5b and an output waveguide 8; the input waveguide 1, the first coupling waveguide 9a and the output waveguide 8 are sequentially connected, the first coupling waveguide 9a and the second coupling waveguide 9b are coupled and arranged, the second coupling waveguide 9b and the electro-optical modulation waveguide 4 are connected end to form a micro-ring resonant cavity, and the second coupling waveguide 9b and the electro-optical modulation waveguide 4 respectively occupy a semicircular ring; a first modulation electrode 5a is arranged in the micro-ring resonant cavity, a second modulation electrode 5b is arranged on the outer side of the electro-optical modulation waveguide 4, and the first modulation electrode 5a and the second modulation electrode 5b are both electrically connected with the electro-optical modulation waveguide 4; the input waveguide 1, the first coupling waveguide 9a, the second coupling waveguide 9b and the output waveguide 8 are all transmission waveguides, and the first modulation electrode 5a and the second modulation electrode 5b are all modulation electrodes. The upper plate 101 and the lower plate 102 of the electro-optical modulation waveguide 4 extend to both sides and are connected to the first modulation electrode 5a and the second modulation electrode 5b, respectively.
All the waveguides of the three electro-optical modulators, such as the transmission waveguides 1-3 and 6-8, the electro-optical modulation waveguide 4 and the like, are of a silicon-lithium niobate-silicon horizontal slot waveguide structure, an optical field is transmitted in the waveguides in a TM mode, the modulation electrode is arranged beside the electro-optical modulation waveguide and can form electric connection, and the modulation electrode is used for applying an electric field to the electro-optical modulation waveguide to realize the modulation of light intensity or phase.
As shown in fig. 4-6, the silicon-lithium niobate-silicon horizontal slot waveguide structure is a three-layer waveguide structure in which the upper plate 101 and the lower plate 102 are made of silicon, and the middle slot 103 is made of lithium niobate, that is, a silicon-lithium niobate-silicon structure/silicon-based lithium niobate hybrid structure is formed, the width of the upper plate 101 is smaller than that of the lower plate 102, the upper plate 101 and the lower plate 102 are both rectangular, the middle slot 103 is a trapezoidal structure in cross section connected between the upper plate 101 and the lower plate 102, and the lithium niobate material of the slot 103 is in the z-tangential direction, that is, the extraordinary optical axis thereof is perpendicular to the optical field transmission plane. In one embodiment, the upper end of the middle slot 103 is connected to the bottom of the upper plate 101 and has the same width, and the lower end of the middle slot 103 is connected to the top of the lower plate 102 and has the same width.
Fig. 4 shows a case where there is no modulation electrode on both sides of the horizontal slot waveguide structure, fig. 5 shows a case where there is a connection of modulation electrodes on both sides of the horizontal slot waveguide structure, and fig. 6 shows a case where there is a modulation electrode between a plurality of horizontal slot waveguide structures.
In the horizontal slot waveguide structure, the silicon material of the upper plate 101 and the lower plate 102 needs to be properly concentrated (10)17～1019cm-3) N-type or p-type doping (n-type is typically doped with phosphorus element, p-type is typically doped with boron element) to increase its conductivity.
The modulation electrodes 104, 105, 106, 107, 108, 109 are positioned at the side of the horizontal slot waveguide structure, the upper plate 101 and the lower plate 102 of the electro-optical modulation waveguide extend towards two sides of the horizontal slot waveguide structure and are connected to the modulation electrodes 104, 105, 106, 107, 108, 109 at two sides of the horizontal slot waveguide structure, and the modulation electrodes 104, 105, 106, 107, 108, 109 are directly electrically connected with the side of the upper plate 101/lower plate 102 or are connected through conductive material points. In addition, in the horizontal slot waveguide structure, the parts of the upper plate 101 and the lower plate 102 extending towards two sides are partially etched, so that the thickness is reduced to increase the limiting effect of the waveguide on the optical field.
In one embodiment, the horizontal slot waveguide structure is disposed only on the lower cladding layer 100, and the upper cladding layer is not selected, and the lower cladding layer 100 is a low refractive index material of silica. Respective modulating electrodes 104, 105, 106, 107, 108, 109 are located on the upper portion of the lower cladding layer 100.
The specific implementation example and the implementation process of the invention are as follows:
example 1
As shown in FIG. 1, a high-speed electro-optic phase modulator using silicon-based lithium niobate mixture has an input port on the left side of an input waveguide 1, an output port on the right side of an output waveguide 8, and two kinds of V applied voltages between a first modulation electrode 5a and a second modulation electrode 5bOffAnd VonSo that the device of the embodiment has two corresponding operation statesStates Off and On.
As shown in FIG. 4, the waveguide of this embodiment has upper and lower silicon plates with a thickness of 0.12 μm, an etching depth of 0.06 μm outside the slot, n-type doping, and a doping concentration of 1019cm-3(ii) a The lithium niobate in the slot is in a z-tangential direction, the etching of the lithium niobate usually generates a bevel angle of 30 degrees relative to the vertical direction, and the width of the top of the lithium niobate is 0.8 μm and the thickness of the lithium niobate is 0.3 μm. The modulation electrode arrangement is as shown in fig. 5, and the electrodes are electrically connected to the outermost sides of the upper and lower silicon flat plates, respectively.
Light is input from the left side of the input waveguide 1, and enters the electro-optical modulation waveguide 4 from the left side:
when the operation state is Off, the voltage between the first modulation electrode 5a and the second modulation electrode 5b is VOffThe equivalent refractive index of the electro-optical modulation waveguide 4 is neffThe phase of the light passing through the electro-optical modulation waveguide 4 is increased
Figure BDA0002667185390000072
k is the wave number in vacuum and L is the length of the electro-optical modulation band 4.
When the working state is On, the voltage between the first modulation electrode 5a and the second modulation electrode 5b is VOnSince the doped silicon can be regarded as an equipotential body with smaller resistance, the voltage between the upper silicon plate 101 and the lower silicon plate 102 is VOnAt this time, an electric field distribution is generated in the horizontal slot 103, and due to the electro-optic effect of the lithium niobate material, the extraordinary optical axial refractive index thereof is changed under the action of the electric field:
Figure BDA0002667185390000071
where n is the original refractive index of the lithium niobate in the extraordinary optical axis direction, r33Is the electro-optic coefficient of lithium niobate and d is the thickness of the horizontal slot.
Due to the change of the refractive index of lithium niobate, the equivalent refractive index of the TM mode in the horizontal slot waveguide structure waveguide also changes, and the relationship between them can be expressed as:
Δneff＝SΔn
wherein, S is a coefficient of mode equivalent refractive index change with the change of the refractive index of the electro-optic material, in the common waveguide, S is generally 0.5, in the horizontal slot waveguide structure waveguide of the present invention, the mode field distribution is as shown in fig. 8, more optical fields are distributed in the lithium niobate, the change of the equivalent refractive index is enhanced, and S is calculated to be 0.78, which is higher than that of the common waveguide structure.
The increase in phase of the light passing through the electro-optical modulation waveguide 4 is thus also changed, as shown:
Figure BDA0002667185390000081
where k is the wave number in vacuum and L is the length of the electro-optic modulation waveguide.
Therefore, the half-wave voltage-length of the silicon-based lithium niobate mixed electro-optic phase modulator is expressed as follows:
Figure BDA0002667185390000082
wherein λ is the operating wavelength, VπRepresenting the magnitude of the half-wave voltage, i.e. the voltage change required for a full modulation depth to occur.
Here, a set of typical parameters of the lithium niobate-silicon-based hybrid electro-optic phase modulator of the present invention is given: d 30nm, λ 1.55 μm, S0.78, n 2.1376, r33Calculated as 30pm/V, half-wave voltage-length VπThe L is 0.2V cm, which is far smaller than the reported integrated all-silicon modulator based on the plasma dispersion effect and the silicon-based modulator based on the electro-optical material, and the half-wave voltage-length is only 0.1V cm, so that the modulation efficiency is improved.
In a loss allowable range, the electrode distance can be as small as 2.3 micrometers, and through calculation, the size of a resistance part of the electro-optical phase modulator is 5.2 omega, and the size of a capacitance part of the electro-optical phase modulator is 224fJ, so that the 3dB bandwidth of the silicon-based lithium niobate mixed electro-optical phase modulator is 137GHz due to the limitation of the RC constant of a circuit, the modulation bandwidth is far higher than that of the existing modulator which adopts silicon plasma dispersion effect and electro-optical effect in most parts, and the 3dB bandwidth of the latter modulator is generally dozens of GHz.
Example 2
As shown in fig. 2, the mach-zehnder electro-optic intensity modulator using si-based lithium niobate mixture has an input port on the left side of the input waveguide 1 and an output port on the right side of the output waveguide 8. Two kinds of voltages V are applied between the first modulation electrode 5a and the second modulation electrode 5bOff1And Von1Therefore, the device of the present embodiment has two operation states Off and On. Two kinds of voltages V are applied between the third modulation electrode 5c and the second modulation electrode 5bOff2And Von2Therefore, the device of the present embodiment has two corresponding operating states Off and On.
As shown in FIG. 4, the waveguide of this embodiment has upper and lower silicon plates with a thickness of 0.12 μm, an etching depth of 0.06 μm outside the slot, n-type doping, and a doping concentration of 1019cm-3(ii) a The lithium niobate in the slot is in a z-tangential direction, the etching of the lithium niobate usually generates a bevel angle of 30 degrees relative to the vertical direction, and the width of the top of the lithium niobate is 0.8 μm and the thickness of the lithium niobate is 0.3 μm. The modulation electrode arrangement is as shown in fig. 6, and the electrodes are electrically connected to the outermost sides of the upper and lower silicon flat plates, respectively.
Light is input from the left side of the input waveguide 1 and enters the power splitter 2, and the light is split into two beams of the same energy, beam a and beam B, which enter the first connecting waveguide 3a and the second connecting waveguide 3B, respectively.
When the operation state is Off, the voltage between the first modulation electrode 5a and the second modulation electrode 5b is VOff1A voltage V between the third modulation electrode 5c and the second modulation electrode 5bOff2The light beam A passes through the first electro-optical modulation waveguide 4a with a phase increased to
Figure BDA0002667185390000091
The light beam B passes through the second electro-optical modulation waveguide 4B with the phase increased to
Figure BDA0002667185390000092
The light beams A and B pass through the third connecting waveguide 6a and the fourth connecting waveguide, respectivelyThe waveguide 6B enters a power combiner 7, and when the light beam A and the light beam B are combined, the phase difference is
Figure BDA0002667185390000093
When the working state is On, the voltage between the first modulation electrode 5a and the second modulation electrode 5b is VOn1A voltage V between the third modulation electrode 5c and the second modulation electrode 5bOn2According to the operation principle of the electro-optical phase modulator using the electro-optical modulation waveguide as described above, the light beam A passes through the first electro-optical modulation waveguide 4a, and the phase increase is changed to
Figure BDA0002667185390000094
The light beam B passes through the second electro-optical modulation waveguide 4B, and the phase increase changes to
Figure BDA0002667185390000095
The light beam A and the light beam B enter the power beam combiner 7 through a third connecting waveguide 6a and a fourth connecting waveguide 6B respectively, and when the light beam A and the light beam B are combined, the phase difference is
Figure BDA0002667185390000096
According to the operating principle of the mach-zehnder interferometer, the relationship between the optical power entering the output waveguide 8 from the power combiner 7 and the phase difference between the beam a and the beam B is:
Figure BDA0002667185390000097
wherein, IinFor optical power input from the input port, IoutFor the optical power output from the output port when
Figure BDA0002667185390000098
Get
Figure BDA0002667185390000099
And
Figure BDA00026671853900000910
optical power I output by the output port at different valuesoutAnd also different (in the case of optimal modulation effect,
Figure BDA00026671853900000911
Figure BDA00026671853900000912
and
Figure BDA00026671853900000913
representing the two-arm phase difference in the unpowered and powered states, respectively.
According to the working principle of the phase modulator in the above embodiment 1, the phase difference generated by the light beam a and the light beam B passing through the waveguide of the modulation region in the On state and the Off state is represented as:
Figure BDA00026671853900000914
wherein the content of the first and second substances,
Figure BDA00026671853900000915
respectively showing the amount of increase in the phase of the light beam a after passing through the first electro-optical modulation waveguide 4a in the On and Off states,
Figure BDA00026671853900000916
respectively showing the amount of increase in the phase of the light beam B after passing through the second electro-optical modulation waveguide 4B in the On and Off states,
when a voltage is applied between the first modulation electrode 5a and the second modulation electrode 5b and between the second modulation electrode 5b and the third modulation electrode 5c at the first electrode, the direction of the electric field between the first modulation electrode 5a and the second modulation electrode 5b is opposite to the direction of the electric field between the second modulation electrode 5b and the third modulation electrode 5c, and therefore
Figure BDA00026671853900000917
The mach-zehnder electro-optic intensity modulator with lithium niobate silicon based hybrid can therefore be expressed as:
Figure BDA00026671853900000918
here, a typical set of parameters for the mach-zehnder electro-optic intensity modulator of the present invention using lithium niobate-on-silicon mixing is given: d 30nm, λ 1.55 μm, S0.78, n 2.1376, r33Calculated as 30pm/V, half-wave voltage-length VπThe L is 0.1V cm, which is far smaller than the reported integrated all-silicon modulator based on the plasma dispersion effect, and the modulation efficiency is improved because the half-wave voltage-length is only 0.1V cm.
As shown in fig. 6, the mach-zehnder electro-optic intensity modulator adopts a pull-push structure, the circuits of the first electro-optic modulation waveguide 4a and the second electro-optic modulation waveguide 4b are in a parallel structure, and the electrodes are in a GSG form, so that the equivalent circuit is the same as that of the electro-optic phase modulator in embodiment 1, and the change of the modulation length L does not affect the product of R and C, so that the 3dB bandwidth is also the same as that of the electro-optic phase modulator, the 3dB bandwidth caused by the RC constant limitation is 137GHz, and the modulation bandwidth is far higher than that of the reported or commercial silicon-based electro-optic modulator.
Example 3
As shown in fig. 3, a silicon-based lithium niobate-mixed micro-ring resonant cavity electro-optical intensity modulator is adopted, the left side of an input waveguide 1 is an input port, the right side of an output wave band 5 is an input port, and input light is single-wavelength light with a wavelength of λ. Two kinds of voltages V are applied between the first modulation electrode 5a and the second modulation electrode 5bOffAnd VonTherefore, the device of the present embodiment has two corresponding operating states Off and On.
As shown in FIG. 4, the waveguide of this embodiment has upper and lower silicon plates with a thickness of 0.12 μm, an etching depth of 0.06 μm outside the slot, n-type doping, and a doping concentration of 1019cm-3(ii) a The lithium niobate in the slot is in a z-tangential direction, the etching of the lithium niobate usually generates a bevel angle of 30 degrees relative to the vertical direction, and the width of the top of the lithium niobate is 0.8 μm and the thickness of the lithium niobate is 0.3 μm. The modulation electrode is arranged as shown in figure 5, and the electrode is respectively connected with the upper silicon and the lower siliconThe outermost sides of the flat plates form electrical connections.
Light is input from the left side of the input waveguide 1 and passes through a coupling region formed by the first coupling waveguide 9a and the second coupling waveguide 9b, and the cross section of the coupling region is as shown in fig. 7:
when operating in the Off state, the voltage between the first modulation electrode 5a and the second modulation electrode 5b is VOffAt this time, the resonant wavelength λ of the micro-ring resonatorOffEqual to the input light wavelength λ, so the input light resonates in the micro-ring resonator and no light is output at the right end of the input waveguide 5.
When the modulator is operated in the On state, the voltage between the first modulation electrode 5a and the second modulation electrode 5b is VOnAccording to the working principle of the electro-optical phase modulator adopting the silicon-based lithium niobate mixture, the refractive index of the lithium niobate in the silicon slot of the electro-optical modulation waveguide is changed under the action of an electric field, and the phase of light in the micro-ring resonant cavity is increased and changed, so that the resonance wavelength lambda of the micro-ring resonant cavity is causedOnAnd is changed and is not equal to the wavelength lambda of the input light, so that the input light does not resonate in the micro-ring resonant cavity and is output from the right end of the output waveguide 8. In summary, the voltage between the first modulating electrode 5a and the second modulating electrode 5b is represented by VOffChange to VOnModulation of the light intensity is achieved.
In this embodiment, the modulation structure of the silicon-based lithium niobate-hybrid micro-ring resonant cavity electro-optic intensity modulator is similar to that of the silicon-based lithium niobate-hybrid electro-optic phase modulator in embodiment 1, so that the calculation of the half-wave voltage-length and the 3dB modulation bandwidth of the modulation rate is similar to that in embodiment 1, and further description is omitted.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (10)

1. A silicon-based lithium niobate hybrid electro-optical modulator is characterized in that:
the transmission waveguides (1-3, 6-8) and the electro-optical modulation waveguide (4) in the electro-optical modulator are all silicon-lithium niobate-silicon horizontal slot waveguide structures, an optical field is transmitted in the waveguide in a TM mode, the modulation electrode is arranged beside the electro-optical modulation waveguide and can form electric connection, and the modulation electrode is used for applying an electric field to the electro-optical modulation waveguide to realize the modulation of light intensity or phase.
2. The lithium niobate-on-silicon hybrid electro-optic modulator of claim 1, wherein:
the silicon-lithium niobate-silicon horizontal slot waveguide structure is a three-layer waveguide structure formed by an upper flat plate (101) and a lower flat plate (102) which are made of silicon, a middle slot (103) is made of lithium niobate, the width of the upper flat plate (101) is smaller than that of the lower flat plate (102), the middle slot (103) is a structure which is connected between the upper flat plate (101) and the lower flat plate (102) and has a trapezoidal section, and the lithium niobate material of the slot (103) is in a z-tangential direction, namely the extraordinary optical axis of the lithium niobate material is vertical to a light field transmission plane.
3. The lithium niobate-on-silicon hybrid electro-optic modulator of claim 1, wherein:
in the horizontal slot waveguide structure, silicon materials of an upper flat plate (101) and a lower flat plate (102) are doped with n-type or p-type.
4. The lithium niobate-on-silicon hybrid electro-optic modulator of claim 1, wherein:
the modulation electrodes (104, 105, 106, 107, 108, 109) are positioned at the side of the horizontal slot waveguide structure, the upper flat plate (101) and the lower flat plate (102) of the electro-optical modulation waveguide extend towards the two sides of the horizontal slot waveguide structure and are connected to the modulation electrodes (104, 105, 106, 107, 108, 109) at the two sides of the horizontal slot waveguide structure, and the modulation electrodes (104, 105, 106, 107, 108, 109) are directly electrically connected with the side surfaces of the upper flat plate (101)/the lower flat plate (102) or are connected through conductive material points.
5. The lithium niobate-on-silicon hybrid electro-optic modulator of claim 2, wherein:
in the horizontal slot waveguide structure, the parts of the upper flat plate (101) and the lower flat plate (102) extending towards two sides are partially etched.
6. The lithium niobate-on-silicon hybrid electro-optic modulator of claim 1, wherein:
the horizontal slot waveguide structure is only arranged on the lower cladding (100) without selecting the upper cladding, and the lower cladding (100) is made of silicon dioxide low-refractive-index materials.
7. The lithium niobate-on-silicon hybrid electro-optic modulator of claim 1, wherein:
the electro-optical modulator is a phase modulator with an electro-optical modulation waveguide, a Mach-Zehnder electro-optical intensity modulator and a micro-ring resonant cavity electro-optical intensity modulator.
8. The lithium niobate-on-silicon hybrid electro-optic modulator of claim 7, wherein:
the phase modulator with the electro-optical modulation waveguide comprises an input waveguide (1), an electro-optical modulation waveguide (4), a first modulation electrode (5a), a second modulation electrode (5b) and an output waveguide (8); the input waveguide (1), the electro-optic modulation waveguide (4) and the output waveguide are sequentially connected (8) along a transmission direction, a first modulation electrode (5a) and a second modulation electrode (5b) are respectively positioned on two sides of the electro-optic modulation waveguide (4) and are respectively electrically connected with the electro-optic modulation waveguide (4), the input waveguide (1) and the output waveguide (8) are both transmission waveguides, and the first modulation electrode (5a) and the second modulation electrode (5b) are both modulation electrodes.
9. The lithium niobate-on-silicon hybrid electro-optic modulator of claim 7, wherein:
the Mach-Zehnder type electro-optic intensity modulator with the electro-optic modulation waveguide comprises an input waveguide (1), an input power beam splitter (2), a first connecting waveguide (3a), a second connecting waveguide (3b), a first electro-optic modulation waveguide (4a), a second electro-optic modulation waveguide (4b), a first modulation electrode (5a), a second modulation electrode (5b), a third modulation electrode (5c), a third connecting waveguide (6a), a fourth connecting waveguide (6b), an output power beam combiner (7) and an output waveguide (8); the output end of the input waveguide (1) is connected with the input port of the input power beam splitter (2), two output ports of the input power beam splitter (2) are respectively connected with the input ends of a first connecting waveguide (3a) and a second connecting waveguide (3b), the output end of the first connecting waveguide (3a) is connected with the input end of a third connecting waveguide (6a) through a first electro-optical modulation waveguide (4a), the output end of the second connecting waveguide (3b) is connected with the input end of a fourth connecting waveguide (6b) through a second electro-optical modulation waveguide (4b), the output ends of the third connecting waveguide (6a) and the fourth connecting waveguide (6b) are respectively connected with two input ports of an output power beam combiner (7), and the output port of the output power beam combiner (7) is connected with an output waveguide (8); the first modulation electrode (5a) and the third modulation electrode (5c) are respectively positioned at two outer sides of the first electro-optical modulation waveguide (4a) and the second electro-optical modulation waveguide (4b) and are respectively electrically connected with the first electro-optical modulation waveguide (4a) and the second electro-optical modulation waveguide (4 b); meanwhile, the second modulation electrode (5b) is positioned between the first electro-optical modulation waveguide (4a) and the second electro-optical modulation waveguide (4b) and is respectively and electrically connected with the first electro-optical modulation waveguide (4a) and the second electro-optical modulation waveguide (4 b); the input power beam splitter (2) and the output power beam combiner (7) adopt Y-shaped waveguides, the input waveguide (1), the input power beam splitter (2), the first connecting waveguide (3a), the second connecting waveguide (3b), the third connecting waveguide (6a), the fourth connecting waveguide (6b), the output power beam combiner (7) and the output waveguide (8) are transmission waveguides, the first modulation electrode (5a), the second modulation electrode (5b) and the third modulation electrode (5c) are modulation electrodes, and the first electro-optic modulation waveguide (4a) and the second electro-optic modulation waveguide (4b) are electro-optic modulation waveguides.
10. The lithium niobate-on-silicon hybrid electro-optic modulator of claim 7, wherein:
the micro-ring resonant cavity type electro-optic intensity modulator with the electro-optic modulation waveguide comprises an input waveguide (1), a first coupling waveguide (9a), a second coupling waveguide (9b), the electro-optic modulation waveguide (4), a first modulation electrode (5a), a second modulation electrode (5b) and an output waveguide (8); the input waveguide (1), the first coupling waveguide (9a) and the output waveguide (8) are sequentially connected, the first coupling waveguide (9a) and the second coupling waveguide (9b) are coupled and arranged, and the second coupling waveguide (9b) and the electro-optic modulation waveguide (4) are connected end to form a micro-ring resonant cavity; a first modulation electrode (5a) is arranged in the micro-ring resonant cavity, a second modulation electrode (5b) is arranged on the outer side of the electro-optical modulation waveguide (4), and the first modulation electrode (5a) and the second modulation electrode (5b) are electrically connected with the electro-optical modulation waveguide (4); the input waveguide (1), the first coupling waveguide (9a), the second coupling waveguide (9b) and the output waveguide (8) are all transmission waveguides, and the first modulation electrode (5a) and the second modulation electrode (5b) are all modulation electrodes.
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