CN110456528A - A kind of plasma electric optical modulator of twin-guide manifold type - Google Patents
A kind of plasma electric optical modulator of twin-guide manifold type Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0018—Electro-optical materials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
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Abstract
The present invention relates to a kind of plasma electric optical modulators of twin-guide manifold type, solve be size with average coupling efficiency, extinction ratio performance cannot be compatible technical problem, solve the problems, such as that through-type electrooptic modulator cannot be applied to ORNoC on piece optical-fiber network very well simultaneously, by using including SiO2 base, the consistent Si waveguide of three waveguide parameters is etched on SiO2 base, the Si waveguide in outside is used for transmission optical-fiber network in the laser signal modulated and connection sheet for inputting laser, the Si waveguide of other side；The disposed thereon for being located in the middle Si waveguide has the first HfO2 layers, ITO layer, the 2nd HfO2 layers and conductor layer；The conductor layer applies anode voltage, and the Si waveguide surface above SiO2 base preferably resolves the problem, can be used on piece optical-fiber network for applying cathode voltage technical solution.
Description
Technical field
The present invention relates to electrooptic modulator fields, and in particular to a kind of plasma electric optical modulator of twin-guide manifold type.
Background technique
Network-on-chip processor can be convenient integrated and extend numerous processor cores, and the communication between processor cores is held
Amount is big, and therefore, network-on-chip processor has very strong scalability and processing capacity.Designing and manufacturing high-performance treatments
When, the such architectural framework of network-on-chip that current much processor productions commercial city uses manufactures and designs high-performance processor.But
The problems such as communication network of electricity network-on-chip processor inevitably brings power consumption big, communication delay.Integrated optoelectronic device
With the raising of the technological level of optical waveguide, on piece optical-fiber network can efficiently solve that crosstalk in electricity network, bandwidth be small, communication
The problems such as delay, therefore, in current slice optical-fiber network, which becomes, solves communication issue one of the most effective ways in multi-core processor.Piece
The researcher of upper optical-fiber network proposes various topological structures, such as 4 × 4Mesh of 2D, 2D 4 × 4Torus Octagon
3dMesh etc..
Wherein, ORNoC is addressed using Wavelength Division Multiplexing (referred to as: WDM) mode, for
The few situation of processor cores quantity greatly reduces routing delay since it does not need routing forwarding, in high-speed data list
To transmission and requirement of real-time it is high in the case where, such as high-speed data acquistion system, high-performance real-time control system, using ORNoC
On piece optical-fiber network processor have apparent advantage.
Such as the ORNoC network-on-chip processor with eight processor cores, pass through ring light between processor cores
Waveguide is communicated, and disc waveguide can be constituted for one to a plurality of optical waveguide, can be greatly improved using the form of wavelength-division multiplex
Message capacity increases a plurality of waveguide, can increase message capacity doublely.In communication process between processor cores, processing
When needing to communicate between device kernel, transmitting terminal exports electrical signal, and electric signal is amplified or becomes heat and removes control electric light tune
Device processed is logical, and the optical signalling of corresponding wavelength will be modulated by electrooptic modulator, and the corresponding optical filter in receiving end will be received
To the optical signal of the wavelength, then optical signalling is reduced to electrical signal by PD photoelectric converter, and receiving end receives transmitting terminal hair
The electrical signal come.Wherein, the performance parameter of electrooptic modulator is most important in ORNoC network-on-chip.
It is existing to be made of micro-ring resonator and Mach-Zehnder Modulato (referred to as: MZM) optical modulator.Mach-
The size of Zehnder Modulator and micro-ring resonator electrooptic modulator is greatly usually in tens um, and modulation rate is generally several
Ten G, micro-ring resonator modulator can do size smaller, but its refractive index is easy to be affected by temperature, therefore thermostabilization
Property is poor.Set forth herein a kind of plasma electric optical modulators with twin-guide manifold type, are able to solve above-mentioned technical problem, and fit
On piece optical-fiber network for ORNoC topological structure.
Summary of the invention
The technical problem to be solved by the present invention is to sizes existing in the prior art and average coupling efficiency, extinction ratio
The technical problem that can be compatible with.A kind of plasma electric optical modulator of new twin-guide manifold type, twin-guide coupling are provided
The plasma electric optical modulator of formula has the characteristics that average coupling efficiency, extinction ratio, size are balanced.
In order to solve the above technical problems, the technical solution adopted is as follows:
A kind of plasma electric optical modulator of twin-guide manifold type is connected on piece optical-fiber network, the twin-guide manifold type
Plasma electric optical modulator include SiO2 base, the consistent Si waveguide of three waveguide parameters, the Si wave in outside are etched on SiO2 base
It leads for inputting laser, the Si waveguide of other side is used for transmission optical-fiber network in the laser signal modulated and connection sheet；It is located at
The disposed thereon of intermediate Si waveguide has the first HfO2 layers, ITO layer, the 2nd HfO2 layers and conductor layer；The conductor layer applies sun
Pole tension, the Si waveguide surface above SiO2 base is for applying cathode voltage.
The working principle of the invention: by etching three Si optical waveguides on SiO2 base, then in intermediate Si optical waveguide
Side deposits the ito thin film of similar " sandwich " HfO2 interlayer, by carrier concentration in regulation ITO accumulation layer to change intermediate island
The effective refractive index of shape medium, the high-speed electrical signals of input efficiently control " ON " and " OFF " two states of optical signal, realize
High-speed electrical signals are modulated to optical signal, optical signal is coupled to disc waveguide from input waveguide, especially suitable for ORNoC system knot
The on piece optical-fiber network processor of structure.
In above scheme, for optimization, further, the Si waveguide is ridge Si waveguide.
Further, the conductor layer is Au layers.
Further, the height of the ridge Si waveguide is that mobile height occurs for perspective spectrum window.When change Si light wave
When leading height, discovery perspective spectrum window is moved, and can be made WDM mode to improve message capacity.
Further, the on piece optical-fiber network is the on piece optical-fiber network of ORNoC topological structure.
Further, deposition uses spraying process method.
Further, the width Wg=400nm of the ridge Si waveguide, the spacing Wgap=between adjacent S i waveguide
150nm is located in the middle ridge Si duct height Hig positioned at the duct height Hg=180nm of two ridge Si waveguides of two sides
=180nm, the first HfO2 layers thickness Hig=15nm, ITO layer thickness HHfO=20nm, the 2nd HfO2 layer thickness H ig=
15nm, Au layer thickness H Au=500nm and ridge Si waveguide length Lcoupling=8500nm；The twin-guide manifold type etc.
The operation wavelength of ion electrooptic modulator is 1400nm-1600nm, central wavelength 1550nm.
According to the perturbation theory of Yariv, coupled system can be treated as into a perfect waveguide by certain perturbation, be then situated between
Wave equation in matter optical waveguide are as follows:
Under perturbation, perturbation variation is had occurred in the polarization intensity p of the medium in waveguide, can be indicated are as follows:
P (r, t)=P0(r, t)+Ppert(r, t)；
Wherein, P0(r, t) represents the polarization intensity of medium in waveguide when disturbance is not present；Ppert(r, t) represents coupled wave
Additional polarizing intensity caused by relevant various disturbances.
E is derived as a result,x、EyAnd EzField component are as follows:
The linear superposition that the light field in the waveguide of disturbance expands into the electromagnetic field of all possibility modes in waveguide will be present, according to
Orthogonality between each mode wave field, the condition of wave field amplitude " gradual " caused by Mode Coupling
Under, it derives calculate by analysis:
Wherein, two of the left side respectively represent the wave of a direction-z propagationThe wave propagated with a direction+zWithThe respectively amplitude function of both direction S rank mode wave.
Electro-optical Modulation structure of the invention can be regarded as two waveguide a, b close to each other such as Fig. 6.Two waveguides
Respective refractive index is respectively naAnd nb, when two waveguide distances are remote enough, there is no coupling, wave field is respectivelyWithRespective propagation constant is βaAnd βb.When two waveguide distances are close enough, it is existing that coupling has occurred
As wave field can approximatively be expressed as the sum of wave field when two undisturbeds:
Calculate disturbance polarization intensity Ppert(r, t) are as follows:
Wherein, n (x) is the refractive index distribution function of the waveguide with coupling.Coupled wave equation can be calculated:
Wherein M is represented in the waveguide of coupling, β of the transmission coefficient of wave relative to no coupled waveguideaAnd βbβ will be changed toa+M
And βb+M, the coefficient of coup are as follows:
It calculates, the transmission difference of the guided wave intermode of a, b waveguide are as follows:
2 δ=(βb+Mb)-(βa+Ma)；
Wherein, δ is known as the phase mismatch factor.
Energy transfer caused by Mode Coupling when i.e. δ=0, could couple only when close to matching.
Assuming that only having waveguide b there are single-mode light propagation at z=0, in 0 region z >, i.e., perturbation occurs
B (0)=B0, A (0)=A0；
Light-wave energy uses P respectively in waveguide a, ba=| A (z) |2And Pb=| B (z) |2It indicates, according to conservation of energy original
Then, it can obtain:
When the structures such as the size of two waveguides of a, b, refractive index and its identical material parameter, the coefficient of coup has: Kba=
Kab, Mab=Mba, so that
K in above formula2=| Kab|2.Entrained energy is respectively as follows: in waveguide a, b
Pb(z)=P0-Pa(z)；
P in above formula0=| B (0) |2For the input energy of waveguide b.
In the case that in phase matched, the propagation constant of two waveguides is equal, when transmission range is L=pi/2 K, energy
Amount is transferred in waveguide a from waveguide b completely.
Active material-tin indium oxide (indium tin oxide, ITO) in the present invention is special with dielectric constant electricity tune
The transparent conductive oxide (transparent conductor oxides, TCOs) of property, partly leads with silicon based metal-oxide-
Body (metal-oxide-semiconductor, MOS) has similar field-effect, and when applied voltage effect, TCOs material layer exists
The interface contacted with dielectric layer can quickly form charge carrier accumulation region or depletion region, pass through the controllable accumulation of applying bias
The concentration of area or depletion region carrier, and then realize the change of TCOs dielectric constant (refractive index).When TCOs material layer dielectric is normal
When number real parts are close to zero, it is defined as the nearly zero state of dielectric constant (epsilon-near-zero, ENZ).The nearly zero state energy of dielectric constant
The overlap integral for largely enhancing light field and electro-optical material layer improves light absorption modulation efficiency, therefore most of based on TCOs
The electrooptic modulator of material generallys use narrow slit wave-guide or blending surface phasmon waveguiding structure to construct MOS capacitor knot
Structure, and by applying appropriate voltage to obtain the nearly zero state of TCOs material dielectric constant, to realize electro-absorption modulation.Its dielectric is normal
Number meets Drude model:
ε in above formula∞For high-frequency dielectric constant (ε∞=3.9), NITOIt is the electron concentration of ITO material, ω is angular frequency, γ
It is carrier scattering rate (γ=1.8 × 1014rad/s), m*It is carrier effective mass (m*=0.35m0, m0For electron mass,
m0=9.31 × 10-31Kg), q is electron charge (q=1.6 × 10-19C), ε0It is free space dielectric constant (ε0=8.85 ×
10-12F/m。
In order to calculate ITO carrier concentration by voltage-controlled variation, present invention employs calculated with drag:
N in above formula0=1 × 10-19, it is the intrinsic carrier concentration of ITO.For HfO2Thickness, the designAnd HaccIt is HfO2In the thickness of the free carrier of ITO lower face accumulation.Hacc=7nm.HfO2Tool
There is very high direct current dielectric constant
Calculate the dielectric constant of ito thin film with voltage-controlled situation of change, such as Fig. 4 and Fig. 5.By refractive index
The complex dielectric permittivity of ITO is obviously by the control of voltage, and in 2.35V voltage known to situation of change, and complex dielectric permittivity is
Nearly zero state energy, realizes in the present invention conversion of " OFF " state.It can be obtained by the conversion of complex dielectric permittivity and complex refractivity index
Under OFF state, complex refractivity index with wavelength situation of change.
Beneficial effects of the present invention: light field is regulated and controled by the electricity of 3D-FDTD analog modulator, clearly demonstrates modulation
Coupled transfer characteristic between device.It is flat between light source and silicon waveguide when the use of optical source wavelength being 1550nm by the structure of optimization
Equal coupling efficiency has reached 70% or more, and extinction ratio is -14.1dB, and insertion loss is 2.1dB.Single electrooptic modulator size
Less than 8.50um*0.83um, the modulation rate of single modulator is 0.7171Tbit/S, when using WDM mode, transmission rate
For 2.1Tbit/S, every transmission 1bit signal energy consumption is 5.7211fJ.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1, the present embodiment electrooptical modulator structure schematic diagram.
Fig. 2, the present embodiment electrooptical modulator structure floor map.
Fig. 3, the present embodiment electrooptical modulator structure scale diagrams.
Fig. 4, the dielectric constant of ito thin film with voltage-controlled variation schematic diagram.
Fig. 5, the dielectric constant of ito thin film with wavelength change schematic diagram.
Fig. 6, silicon substrate twin-guide optical coupling structure schematic diagram.
Fig. 7 applies voltage (OFF) status diagram.
Fig. 8, no applied voltage (ON) status diagram.
Fig. 9, light source are the transmission spectrum schematic diagram of each state of 1400-1600nm wavelength.
Figure 10, light source are the insertion loss schematic diagram of each state of 1400-1600nm wavelength.
Figure 11, light source are the extinction ratio schematic diagram of each state of 1400-1600nm wavelength.
Figure 12, transmission spectrum schematic diagram when duct height is respectively 160,180,200.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, is not used to limit
The fixed present invention.
Embodiment 1
The present embodiment provides a kind of plasma electric optical modulators of twin-guide manifold type, are connected on piece optical-fiber network, such as scheme
1, the plasma electric optical modulator of the twin-guide manifold type includes SiO2 base, and three waveguide parameters of etching are consistent on SiO2 base
Si waveguide, for inputting laser, the Si waveguide of other side is used for transmission the laser signal modulated and company for the Si waveguide in outside
Optical-fiber network in contact pin；The disposed thereon for being located in the middle Si waveguide has the first HfO2 layers, ITO layer, the 2nd HfO2 layers and conductor layer；
The conductor layer applies anode voltage, and the Si waveguide surface above SiO2 base is for applying cathode voltage.
Specifically, the Si waveguide is ridge Si waveguide.
In view of more preferable with more electric conductivity material when applying anode, it is preferable that the conductor layer is Au layers.
Preferably, the height of the ridge Si waveguide is that mobile height occurs for perspective spectrum window.When change Si optical waveguide
When height, discovery perspective spectrum window is moved, and can be made WDM mode to improve message capacity.
The present embodiment can be used for a variety of optical-fiber networks on the upper side, but the on piece optical-fiber network of ORNoC topological structure is suitble to the most.
Specifically, deposition uses common spraying process method.
The present embodiment is by Au layers of application anode voltage, by the dielectric constant of electric field controls ito thin film to change it
Refractive index couples to control the light field between waveguide, realizes the purpose of electrical signal control optical signalling.
The waveguide parameter of three Si waveguides in the present embodiment can be with almost the same, but is changed in length.Outside
A shorter Si waveguide of side is used to input the laser of certain wavelength, and in addition longer Si waveguide one of one side is used for transmission modulation
Good laser signal.
In detail, as shown in Figure 1, Figure 2, the width Wg=400nm of ridge Si waveguide described in Fig. 3, between adjacent S i waveguide between
Ridge Si wave is located in the middle positioned at the duct height Hg=180nm of two ridge Si waveguides of two sides away from Wgap=150nm
Lead height Hig=180nm, the first HfO2 layers thickness Hig=15nm, ITO layer thickness HHfO=20nm, the 2nd HfO2 thickness degree
Hig=15nm, Au layer thickness H Au=500nm and ridge Si waveguide length Lcoupling=8500nm；The twin-guide coupling
The operation wavelength of the plasma electric optical modulator of formula is 1400nm-1600nm.
Automatically controlled light field is emulated by FDTD Solutions simulation software, is excited in the waveguide surface of transmitting terminal
The TM wave that amplitude is 1, wave-length coverage 1400-1600nm observe the distribution of electric field at ON and OFF state respectively
As shown in Figure 4,5, Fig. 4 is that OFF state has observed field distribution in disc waveguide to figure, and Fig. 5 is that ON state exists
Stronger field distribution has been observed in disc waveguide.
Fig. 7 is to apply voltage status, that is, OFF state, and Fig. 8 is no applied voltage state, that is, ON state.As Fig. 9 light source is
Shown in the transmission spectrum schematic diagram of each state of 1400-1600nm wavelength, three curves are respectively 1400-1600nm wavelength in figure
Input power spectrum, ON state output power spectrum and OFF state power spectrum, from transmission spectrum it is apparent that the transmission of different wave length
Rate is not identical to the greatest extent and is in cyclically-varying.It can obviously find in OFF state that optical signal can hardly pass through from green curve.
According to insertion loss formulaPass through emulation and data analysis, as shown in Figure 10, figure
Middle curve is the insertion loss curve of 1400-1600nm wavelength, there is low window between 1450-1555nm.According to extinction ratio
Defined formula:
In above formula, PoffLight signal strength when for " OFF " state in disc waveguide, and PonCircumferential wave when for " ON " state
Light signal strength in leading.We measure the power of 1400-1600nm wave band, and are depicted as song as shown in Figure 10
Line.In each wave band, its extinction ratio is different, and is computed, and such as Figure 11, average extinction ratio is -11.07dB, in 1550nm wavelength
Extinction ratio be -14.1dB.
We are by changing different waveguide height, and movement has occurred in discovery transmission spectrum window, as shown in figure 12, when waveguide height
When degree is respectively 160,180,200, three centres of homology are respectively 1540,1546, at 1554nm wavelength.
COMS structure knot switching rate can be used following formula to indicate:
τ=RC；
Contact resistance R=500 Ω in above formula, by capacitor defined formula:
It calculates:
In above formula, ε0=8.85 × 10-12F/m, d are that ITO adds bilayer HfO2Thickness, S be capacitor junction area, i.e. S=
Lcoupling*Wig, substituting into data can calculate, τ=1.0359 × 10-12S, charging time 1.0359ps.Every charging and discharging one
It is secondary to complete 1bit transmission, then completing the time that 1bit transmission needs is 2 τ=2.0718ps, transmission rate are as follows:
Transmission 1bit needs the power consumption consumed that can count by capacitor charging energy size (electric discharge does not need consumption energy)
It calculates,
It can be calculated capacitanceTherefore E=5.7211 × 10-15J, that
, the power consumption that transmission 1bit needs to consume is 5.7211fJ.
According to Shannon's theoremsCalculate message capacity.
Wherein j=3, B=0.4827THz are computed to obtain AverageC=0.4827THz*1.4856=
0.7171Tbits/S, three channel multiplexings, the total Shannon message capacity that can obtain three channel WDM is ShannonCapacity=
2.1513Tbits/S。
Table 1 summarizes to above-mentioned parameter, then compares the research achievement parameter of each scholar in recent years, comparison
It was found that it is proposed that electrooptic modulator performance parameters: extinction ratio, energy consumption, modulation rate, size, control voltage be superior to greatly
The partially similar electrooptic modulator parameter that other scholars propose.
Table 1
Although the illustrative specific embodiment of the present invention is described above, in order to the technology of the art
Personnel are it will be appreciated that the present invention, but the present invention is not limited only to the range of specific embodiment, to the common skill of the art
For art personnel, as long as long as various change the attached claims limit and determine spirit and scope of the invention in, one
The innovation and creation using present inventive concept are cut in the column of protection.
Claims (7)
1. a kind of plasma electric optical modulator of twin-guide manifold type, is connected on piece optical-fiber network, it is characterised in that: the double wave
The plasma electric optical modulator for leading manifold type includes SiO2 base, etches the consistent Si waveguide of three waveguide parameters on SiO2 base, outside
The Si waveguide of side is used for transmission the laser signal modulated and connection sheet glazing net for inputting laser, the Si waveguide of other side
Network；The disposed thereon for being located in the middle Si waveguide has the first HfO2 layers, ITO layer, the 2nd HfO2 layers and conductor layer；
The conductor layer applies anode voltage, and the Si waveguide surface above SiO2 base is for applying cathode voltage.
2. the plasma electric optical modulator of twin-guide manifold type according to claim 1, it is characterised in that: the Si waveguide is
Ridge Si waveguide.
3. the plasma electric optical modulator of twin-guide manifold type according to claim 2, it is characterised in that: the conductor layer is
Au layers.
4. the plasma electric optical modulator of twin-guide manifold type according to claim 3, it is characterised in that: the ridge Si wave
The height led is that mobile height occurs for perspective spectrum window.
5. the plasma electric optical modulator of -4 any twin-guide manifold types according to claim 1, it is characterised in that: described
Upper optical-fiber network is the on piece optical-fiber network of ORNoC topological structure.
6. the plasma electric optical modulator of -4 any twin-guide manifold types according to claim 1, it is characterised in that: deposition is adopted
With spraying process method.
7. the plasma electric optical modulator of twin-guide manifold type according to claim 3, it is characterised in that: the ridge Si wave
The width Wg=400nm led, the spacing Wgap=150nm between adjacent S i waveguide, two ridge Si waveguides positioned at two sides
Duct height Hg=180nm, is located in the middle ridge Si duct height Hig=180nm, the first HfO2 layers of thickness Hig=
15nm, ITO layer thickness HHfO=20nm, the 2nd HfO2 layer thickness H ig=15nm, Au layer thickness H Au=500nm and ridge Si wave
Lead length Lcoupling=8500nm；The operation wavelength of the plasma electric optical modulator of the twin-guide manifold type is 1400nm-
1600nm。
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| CN113300965A (en) * | 2021-05-17 | 2021-08-24 | 桂林航天工业学院 | Cellular router for network-on-chip interconnection |
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