CN107238951B - Low bias large bandwidth electro-optic modulator - Google Patents
Low bias large bandwidth electro-optic modulator Download PDFInfo
- Publication number
- CN107238951B CN107238951B CN201710543357.8A CN201710543357A CN107238951B CN 107238951 B CN107238951 B CN 107238951B CN 201710543357 A CN201710543357 A CN 201710543357A CN 107238951 B CN107238951 B CN 107238951B
- Authority
- CN
- China
- Prior art keywords
- waveguide
- electro
- modulation
- optic
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005684 electric field Effects 0.000 claims abstract description 17
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- 238000005253 cladding Methods 0.000 claims description 124
- 239000010410 layer Substances 0.000 claims description 81
- 239000012792 core layer Substances 0.000 claims description 45
- 230000008878 coupling Effects 0.000 claims description 32
- 238000010168 coupling process Methods 0.000 claims description 32
- 238000005859 coupling reaction Methods 0.000 claims description 32
- 230000003287 optical effect Effects 0.000 abstract description 18
- 238000000034 method Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 10
- 238000005265 energy consumption Methods 0.000 abstract description 9
- 238000004891 communication Methods 0.000 abstract description 8
- 238000013461 design Methods 0.000 abstract description 4
- 239000000382 optic material Substances 0.000 description 44
- 230000000737 periodic effect Effects 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 230000000694 effects Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 230000008859 change Effects 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 6
- 239000002861 polymer material Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/061—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on electro-optical organic material
- G02F1/065—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on electro-optical organic material in an optical waveguide structure
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a low-bias large-bandwidth electro-optic modulator. The electro-optic modulator is a phase modulator with an electro-optic modulation waveguide, a Mach-Zehnder type electro-optic intensity modulator and a micro-ring resonant cavity type electro-optic intensity modulator, an electric field is applied to the electro-optic modulation waveguide by using a modulation electrode to realize the modulation of the phase or the light intensity, and the modulation electrode is electrically connected with the electro-optic modulation waveguide; an electro-optical modulation waveguide is a waveguide structure constituted in such a manner that the same periodicity or a variation periodicity is alternately arranged in the transmission direction. The invention can be used for electro-optic phase modulation and electro-optic intensity modulation in an optical communication system and has the advantages of large modulation bandwidth, low working voltage, high modulation efficiency, low working energy consumption, small device size, simple structure, simple design, simple process and the like.
Description
Technical Field
The invention belongs to the technical field of optical communication, and particularly relates to a low-bias large-bandwidth electro-optical modulator based on an electro-optical modulation waveguide, which is suitable for modulating the phase and intensity of light in an optical communication system.
Background
The human society of the twenty-first century has been moving into the information age, and the rapid development of internet technology has led to a new technological revolution, with an exponential increase in the demand for communication capacity. Optical communication technology has become the mainstream technology of current communication by virtue of its high bandwidth, low crosstalk, interference resistance, low loss and the like. As a core device in the optical communication technology, the performance index of the photoelectric device is difficult to meet the increasing ultra-high speed transmission requirement, and gradually becomes a bottleneck for development of the ultra-large capacity optical communication technology. Among the various solutions that have been proposed, silicon-based photonic integrated circuits have received great attention since their concept was proposed as one of the most promising solutions, and have taken considerable progress in the performance of individual devices, particularly in recent years, the maturation of silicon photonics has attracted widespread attention in related industries around the world. For passive photonic integrated devices, silicon photonics has achieved various types of high performance devices by virtue of its inherent advantages. However, for active devices, silicon materials are limited by their own characteristics. The electro-optic modulator is one of the most important active devices, and has the function of converting electric signals into optical signals, is a core element of a transmitter, and is a key technology for urgent breakthrough in silicon-based integrated optoelectronic devices.
One of the most effective methods to achieve high-speed electro-optic modulation is to use the electro-optic effect, i.e. in electro-optic materials, the refractive index change is in a linear relationship with the applied electric field change. However, such linear electro-optic effects are very small in silicon materials and thus cannot be directly used to realize high-speed optical modulators based on the electro-optic effects of silicon materials. Another method is to useTechniques based on the effect of plasma dispersion, namely: the carrier concentration in the semiconductor is regulated and controlled by an external electric field, so that the real part and the imaginary part of the refractive index of the semiconductor material are changed, and the light modulation function is realized. The carrier concentration regulation in the silicon material is a nanosecond-picosecond order process, and can realize high-speed light modulation of tens of Gbps. For the reported all-silicon modulator based on the plasma dispersion effect, the size was 10mm 2 About, half-wave voltage is about 8V, offset voltage is about 5V, and more thermo-optic phase shifters are needed to assist in working, and the defects of larger device size, higher power consumption, high offset voltage and the like still exist. Thus, considering the device size, power consumption, driving voltage, insertion loss, etc., all-silicon modulators still have a large gap from existing commercial lithium niobate-based discrete electro-optic modulators.
Another potential modulator implementation in silicon photonic integrated circuits is to combine electro-optic materials (e.g., the most commonly used electro-optic material lithium niobate, which has been widely used in commercial discrete electro-optic modulator devices) with silicon nano-waveguides. The electro-optic polymer material is a commonly used electro-optic material on a silicon-based integrated device, has the advantages of large electro-optic coefficient, simple film process, basic integration with the prior art and the like, is very suitable for manufacturing modulators with low working voltage, high modulation efficiency and small device size, and can realize the electro-optic modulator with ultra-low power consumption because the electro-optic polymer material is generally an insulating medium. Although some silicon-based electro-optic polymeric material modulators have been reported, only a breakthrough in single performance index (modulation rate/bandwidth, operating voltage, device size) still has many disadvantages in overall performance, and thus silicon-based electro-optic modulators with large modulation bandwidth, low operating voltage, high modulation efficiency, low operating power consumption, and small device size remain a challenge.
Disclosure of Invention
Aiming at the problems existing in the background technology, the invention aims to provide a low-bias large-bandwidth electro-optical modulator based on an electro-optical modulation waveguide, which can realize smaller driving voltage, more compact size, larger modulation bandwidth and lower working energy consumption, and has the advantages of simple structure, simple design, simple and convenient process and the like, and plays an important role in a silicon photon integrated circuit.
The technical scheme adopted by the invention is as follows:
the electro-optic modulator is a phase modulator with an electro-optic modulation waveguide, a Mach-Zehnder type electro-optic intensity modulator and a micro-ring resonant cavity type electro-optic intensity modulator, an electric field is applied to the electro-optic modulation waveguide by using a modulation electrode to realize the modulation of light intensity or phase, and the modulation electrode is electrically connected with the electro-optic modulation waveguide.
The electro-optical modulation waveguide is a waveguide structure formed by alternately arranging a plurality of waveguide units in the same period or in an interdigital mode with a changing period along the transmission direction, and the gaps among the waveguide units and the dimensions of the waveguide units can be the same or different. The periodic size of the waveguide structure is less than or equal to the operating wavelength.
The phase modulator with the electro-optic modulation waveguide comprises a cladding structure, an input waveguide, an electro-optic modulation waveguide, a first modulation electrode, a second modulation electrode and an output waveguide, wherein the input waveguide, the electro-optic modulation waveguide, the first modulation electrode, the second modulation electrode and the output waveguide are coated in the cladding structure; the input waveguide, the electro-optic modulation waveguide and the output waveguide are connected in sequence, and the first modulation electrode and the second modulation electrode are respectively positioned at two sides near the electro-optic modulation waveguide and are respectively and electrically connected with the periodic structure waveguides at two sides in the electro-optic modulation waveguide. The two sides may be left and right sides or upper and lower sides in the conveying direction.
The Mach-Zehnder type electro-optic intensity modulator with the electro-optic modulation waveguide comprises a cladding structure, an input waveguide, a power divider, a first connecting waveguide, a second connecting waveguide, a first electro-optic modulation waveguide, a second electro-optic modulation waveguide, a first modulation electrode, a second modulation electrode, a third connecting waveguide, a fourth connecting waveguide, a power combiner and an output waveguide, wherein the input waveguide, the power divider, the first connecting waveguide, the second connecting waveguide, the first electro-optic modulation waveguide, the second electro-optic modulation waveguide, the first modulation electrode, the second modulation electrode, the third connecting waveguide, the fourth connecting waveguide; the input waveguide is connected with the input port of the power divider, the two output ports of the power divider are respectively connected with the input ends of the first connecting waveguide and the second connecting waveguide, the output end of the first connecting waveguide is connected with the input end of the third connecting waveguide through the first electro-optical modulation waveguide, the output end of the second connecting waveguide is connected with the input end of the fourth connecting waveguide through the second electro-optical modulation waveguide, the output ends of the third connecting waveguide and the fourth connecting waveguide are respectively connected with the two input ports of the power combiner, and the output port of the power combiner is connected with the output waveguide; the first modulation electrode and the third modulation electrode are respectively positioned at two outer sides of the first electro-optical modulation waveguide and the second electro-optical modulation waveguide, and the second modulation electrode is positioned between the first electro-optical modulation waveguide and the second electro-optical modulation waveguide, so that the first modulation electrode and the second modulation electrode are respectively positioned at two sides near the first electro-optical modulation waveguide and are respectively electrically connected with the periodic structure waveguides at two sides in the first electro-optical modulation waveguide; and the second modulation electrode and the third modulation electrode are respectively positioned at two sides near the second electro-optic modulation waveguide and are respectively and electrically connected with the periodic structure waveguides at two sides in the second electro-optic modulation waveguide. The two sides may be left and right sides or upper and lower sides in the conveying direction.
The micro-ring resonant cavity type electro-optic intensity modulator with the electro-optic modulation waveguide comprises a cladding structure, an input waveguide, a first coupling waveguide, a second coupling waveguide, an electro-optic modulation waveguide, a first modulation electrode, a second modulation electrode and an output waveguide, wherein the input waveguide, the first coupling waveguide, the second coupling waveguide, the electro-optic modulation waveguide, the first modulation electrode, the second modulation electrode and the output waveguide are coated in the cladding structure; the input waveguide, the first coupling waveguide and the output waveguide are sequentially connected, the first coupling waveguide and the second coupling waveguide are in coupling arrangement, and the second coupling waveguide and the electro-optic modulation waveguide are connected end to form a micro-ring resonant cavity; the first modulation electrode and the second modulation electrode are respectively arranged at two sides near the electro-optical modulation waveguide and are respectively electrically connected with the periodic structure waveguides at the inner side and the outer side in the electro-optical modulation waveguide. The two sides may be left and right sides or upper and lower sides in the conveying direction.
The cladding structure is a cladding structure having a symmetrical or asymmetrical waveguide section (section perpendicular to the transmission direction). Specifically, the waveguide is covered with an upper cladding layer and a lower cladding layer as core layers, the upper cladding layer and the lower cladding layer can adopt the same electro-optic material or different electro-optic materials, and the refractive index and the electro-optic coefficient can be the same or different.
The cladding structure mainly comprises an upper cladding and a lower cladding, the waveguide is used as a core layer, the upper cladding is covered on the core layer, the lower cladding is positioned below the core layer, and the refractive indexes of the upper cladding and the lower cladding are equal.
The cladding structure is asymmetric up and down or left and right on the section along the transmission direction by taking the core layer as the center, and the asymmetry refers to different refractive indexes or different at least one of thickness and width.
The upper and lower dissymmetry of the section of the cladding structure along the transmission direction means that the index of refraction of the upper cladding layer and the lower cladding layer on the upper side and the lower side of the waveguide serving as the core layer are different or at least one of the thickness and the width is different.
The dissymmetry of the section of the cladding structure along the transmission direction means that the refractive indexes of the cladding layers on the left side and the right side of the waveguide serving as the core layer are different or at least one of the thickness and the width is different.
Each waveguide is used as a core layer and is a full-etched waveguide, a single-side ridge waveguide or a double-side ridge waveguide; in the case of a double-sided ridge waveguide, the number of layers, height, or length of the two-sided ridge may be equal or unequal.
The cladding structure mainly comprises an upper cladding layer covered on the core layer and a lower cladding layer positioned below the core layer, and the waveguide is used as the core layer; each of the modulation electrodes is located at the same time in the upper part of the upper cladding, the inside of the lower cladding, or between the upper cladding and the lower cladding, or each of the modulation electrodes is located at a plurality of different positions (preferably in bilaterally symmetrical positions) in the upper part of the upper cladding, the inside of the lower cladding, or between the upper cladding and the lower cladding, respectively. Each of the modulating electrodes is directly electrically connected to the waveguide core layer or is point-connected thereto by other conductive material.
At least one of the upper cladding and the lower cladding uses an electro-optic material with high electro-optic coefficient, the electro-optic coefficient r 33 As high as 192pm/V, the electro-optic coefficient of common commercial electro-optic materials is generally not more than 100pm/V.
The invention has the beneficial effects that:
the invention has simple structure, simple design and simple and convenient process, and is basically compatible with the mature CMOS (complementary metal oxide semiconductor) process. In terms of performance, the inventionIn the bright periodic structure, most of light energy is distributed in the electro-optic material, compared with the common silicon nanowire optical waveguide, the effect of the light and the electro-optic material is obviously enhanced, and the ratio of the equivalent refractive index change of the mode in the waveguide to the refractive index change of the electro-optic material is more than 1, namely delta n eff /Δn EOP >1, in a normal waveguide, the coefficient is typically 0.5. Meanwhile, since the distance between adjacent waveguides of the periodic structure is small and as small as 100nm, the modulation electric field is enhanced therein.
At the same time, due to the high electro-optic coefficient of the electro-optic polymer material, the electro-optic modulator of the invention can realize extremely low working voltage and extremely small device size (V) π L=0.23 v·mm), far superior to the lithium niobate discrete modulator and silicon-based plasma dispersion effect electro-optic modulator in the introduction, as well as most of the silicon-organic hybrid electro-optic modulators that have been reported.
The electrode structure of the invention has smaller RC constant, and can realize very large modulation bandwidth (the 3dB bandwidth is 176 GHz) by matching with extremely fast response speed of electro-optic polymer materials, which is larger than the 3dB bandwidth of dozens of to dozens of GHz of most of reported modulators. Meanwhile, because the electro-optic polymer material is an insulating dielectric material, the current is extremely small in the working process, so that the electro-optic modulator has extremely low working energy consumption (about 1 fJ/bit) and is superior to the reported power consumption of tens to hundreds of fJ/bit.
In summary, compared with the existing electro-optical modulator in the background introduction, the electro-optical modulator can realize lower working voltage, smaller device size, larger modulation bandwidth, higher modulation efficiency and lower working energy consumption, and meanwhile, the manufacturing process of the electro-optical modulator can be compatible with the existing mature CMOS process, and has the advantages of simple structure, simple design, simple process and the like.
Drawings
Fig. 1 is a schematic diagram of a high-speed electro-optic phase modulator employing an electro-optic modulation waveguide in accordance with the present invention.
FIG. 2 is a schematic diagram of a Mach-Zehnder electro-optic intensity modulator employing electro-optic modulation waveguides in accordance with the present invention
FIG. 3 is a schematic diagram of a micro-ring cavity electro-optic intensity modulator employing electro-optic modulation waveguides in accordance with the present invention.
FIG. 4 is a schematic cross-sectional view of a single-sided ridge waveguide structure with symmetrical cladding in accordance with the present invention.
Fig. 5 is a schematic cross-sectional view of a first dual-sided ridge waveguide structure with symmetrical cladding according to the present invention.
FIG. 6 is a schematic cross-sectional view of a second dual-sided ridge waveguide structure with symmetrical cladding according to the present invention.
Fig. 7 is a schematic cross-sectional view of a third dual-sided ridge waveguide structure with symmetrical cladding according to the present invention.
Fig. 8 is a schematic cross-sectional view of a fourth dual-sided ridge waveguide structure with symmetrical cladding according to the present invention.
FIG. 9 is a schematic cross-sectional view of a single-sided ridge waveguide structure with asymmetric cladding in accordance with the present invention.
FIG. 10 is a schematic cross-sectional view of a first dual sided ridge waveguide structure with asymmetric cladding of the present invention.
FIG. 11 is a schematic cross-sectional view of a second dual sided ridge waveguide structure with asymmetric cladding of the present invention.
FIG. 12 is a schematic cross-sectional view of a third dual sided ridge waveguide structure with asymmetric cladding of the present invention.
FIG. 13 is a schematic cross-sectional view of a fourth dual-sided ridge waveguide structure with asymmetric cladding of the present invention.
Fig. 14 is a schematic cross-sectional view of a first electrode location of the present invention.
Fig. 15 is a schematic cross-sectional view of a second electrode location of the present invention.
Fig. 16 is a schematic cross-sectional view of a third electrode location according to the present invention.
Fig. 17 is a schematic cross-sectional view of a fourth electrode location of the present invention.
Fig. 18 is a schematic cross-sectional view of a fully etched waveguide structure and fifth electrode location of the present invention.
Fig. 19 is a schematic top view cross-section of a periodic constant waveguide structure according to the present invention.
Fig. 20 is a schematic top view cross-section of a periodically varying waveguide structure of the present invention.
Fig. 21 is a mode field distribution along the direction of an electro-optically modulated waveguide in accordance with the present invention.
FIG. 22 is a graph of the index of refraction of an electro-optically modulated waveguide mode of the present invention as a function of the index of refraction of an electro-optic material.
Fig. 23 is a schematic diagram of the modulation principle of an electro-optic phase modulator employing an electro-optic modulation waveguide in accordance with the present invention.
Fig. 24 is a schematic circuit diagram of an electro-optic phase modulator employing an electro-optic modulation waveguide in accordance with the present invention.
Fig. 25 is a graph of the frequency response of an electro-optic phase modulator employing an electro-optic modulation waveguide in accordance with the present invention.
Fig. 26 is a schematic diagram of a mach-zehnder electro-optic intensity modulator employing electro-optic modulation waveguides in accordance with the present invention.
Fig. 27 is a schematic circuit diagram of a mach-zehnder electro-optic intensity modulator employing electro-optic modulation waveguides in accordance with the present invention.
Fig. 28 is a schematic diagram of an equivalent circuit of a mach-zehnder electro-optic intensity modulator employing electro-optic modulation waveguides in accordance with the present invention.
In fig. 1: 1-input waveguide, 4-electro-optic modulation waveguide, 5 a-first modulation electrode, 5 b-second modulation electrode, 8-output waveguide.
In fig. 2: 1-input waveguide, 2-power splitter, 3 a-first connecting waveguide, 3 b-second connecting waveguide, 4 a-first electro-optic modulating waveguide, 4 b-second electro-optic modulating waveguide, 5 a-first modulating electrode, 5 b-second modulating electrode, 5 c-third modulating electrode, 6 a-third connecting waveguide, 6 b-fourth connecting waveguide, 7-power combiner, 8 output waveguide.
In fig. 3: 1-input waveguide, 9 a-first coupling waveguide, 9 b-second coupling waveguide, 4-electro-optic modulation waveguide, 5 a-first modulation electrode, 5 b-second modulation electrode, 8-output waveguide.
Detailed Description
The invention is further described below with reference to the drawings and examples.
As shown in fig. 1, the phase modulator with the electro-optical modulation waveguide comprises a cladding structure and an input waveguide 1, an electro-optical modulation waveguide 4, a first modulation electrode 5a, a second modulation electrode 5b and an output waveguide 8 which are coated in the cladding structure; the input waveguide 1, the electro-optical modulation waveguide 4 and the output waveguide are connected in sequence 8, and the first modulation electrode 5a and the second modulation electrode 5b are respectively positioned at the left side and the right side or the upper side and the lower side near the electro-optical modulation waveguide 4 and are respectively and electrically connected with the periodic structure waveguides at the two sides in the electro-optical modulation waveguide 4.
As shown in fig. 2, the mach-zehnder type electro-optical intensity modulator having an electro-optical modulation waveguide includes a cladding structure and an input waveguide 1, a power splitter 2, a first connection waveguide 3a, a second connection waveguide 3b, a first electro-optical modulation waveguide 4a, a second electro-optical modulation waveguide 4b, a first modulation electrode 5a, a second modulation electrode 5b, a third modulation electrode 5c, a third connection waveguide 6a, a fourth connection waveguide 6b, a power combiner 7, and an output waveguide 8 which are clad in the cladding structure; the input waveguide 1 is connected with the input port of the power divider 2, the two output ports of the power divider 2 are respectively connected with the input ends of the first connecting waveguide 3a and the second connecting waveguide 3b, the output end of the first connecting waveguide 3a is connected with the input end of the third connecting waveguide 6a through the first electro-optical modulation waveguide 4a, the output end of the second connecting waveguide 3b is connected with the input end of the fourth connecting waveguide 6b through the second electro-optical modulation waveguide 4b, the output ends of the third connecting waveguide 6a and the fourth connecting waveguide 6b are respectively connected with the two input ports of the power combiner 7, and the output port of the power combiner 7 is connected with the output waveguide 8; the first modulation electrode 5a and the third modulation electrode 5c are respectively positioned at two outer sides of the first electro-optical modulation waveguide 4a and the second electro-optical modulation waveguide 4b, and the second modulation electrode 5b is positioned between the first electro-optical modulation waveguide 4a and the second electro-optical modulation waveguide 4b, so that the first modulation electrode 5a and the second modulation electrode 5b are respectively positioned at two sides near the first electro-optical modulation waveguide 4a and are respectively electrically connected with the periodic structure waveguides at two sides in the first electro-optical modulation waveguide 4 a; and the second modulation electrode 5b and the third modulation electrode 5c are respectively positioned at the left side and the right side or at the upper side and the lower side near the second electro-optic modulation waveguide 4b and are respectively electrically connected with the periodic structure waveguides at the two sides in the second electro-optic modulation waveguide 4 b.
As shown in fig. 3, the micro-ring resonant cavity type electro-optical intensity modulator with the electro-optical modulation waveguide comprises a cladding structure, an input waveguide 1, a first coupling waveguide 9a, a second coupling waveguide 9b, an electro-optical modulation waveguide 4, a first modulation electrode 5a, a second modulation electrode 5b and an output waveguide 8, wherein the input waveguide 1, the first coupling waveguide 9a, the second coupling waveguide 9b, the electro-optical modulation waveguide 4, the second modulation electrode 5b and the output waveguide 8 are coated in the cladding structure; the input waveguide 1, the first coupling waveguide 9a and the output waveguide 8 are sequentially connected, the first coupling waveguide 9a and the second coupling waveguide 9b are in coupling arrangement, and the second coupling waveguide 9b and the electro-optic modulation waveguide 4 are connected end to form a micro-ring resonant cavity; the first modulation electrode 5a and the second modulation electrode 5b are respectively arranged on the left and right sides or the upper and lower sides in the vicinity of the electro-optical modulation waveguide 4, and are respectively electrically connected to the periodic structure waveguides on the inner and outer sides in the electro-optical modulation waveguide 4.
The waveguide structure is a waveguide structure formed by alternately arranging the periodic structures in the same or varying periods along the transmission direction. The gaps and dimensions of the waveguide periodic structure may be the same or different periodic junctions.
As shown in fig. 4 to 13, the cladding structure is a cladding structure having a symmetrical or asymmetrical waveguide section (section in the transmission direction). The cladding structure mainly comprises an upper cladding layer 100 and a lower cladding layer 102, wherein the waveguide is used as a core layer 101, the upper cladding layer 100 is covered on the core layer 101, and the lower cladding layer 102 is positioned below the core layer 101. The core layer 101 is a single-sided ridge waveguide or a double-sided ridge waveguide.
As shown in fig. 4, the upper cladding layer 100 and the lower cladding layer 102 are made of the same electro-optic material, and have the same refractive index. The core layer 101 is a single-sided ridge waveguide, one side of the ridge is etched, and the number of layers of the ridge is one.
As shown in fig. 5, the upper cladding layer 100 and the lower cladding layer 102 are made of the same electro-optic material, and have the same refractive index. The ridge waveguides on the two sides of the core layer 101 are etched, the etching depth of the two sides is the same, the number of layers of the ridge is one, and the number of layers of the ridge on the two sides is the same.
As shown in fig. 6, the upper cladding layer 100 and the lower cladding layer 102 are made of the same electro-optic material, and have the same refractive index. The ridge waveguides on the two sides of the core layer 101 are etched, the etching depths of the two sides are different, the number of layers of the ridge is one, and the number of layers of the ridge on the two sides is the same.
As shown in fig. 7, the upper cladding layer 100 and the lower cladding layer 102 are made of the same electro-optic material, and have the same refractive index. The ridge waveguides on two sides of the core layer 101 are etched on two sides of the ridge, the etching depths of the two sides are different, and the layers of the ridges on the two sides are different.
As shown in fig. 8, the upper cladding layer 100 and the lower cladding layer 102 are made of the same electro-optic material, and have the same refractive index. The ridge waveguides on two sides of the core layer 101 are etched on two sides of the ridge, the etching depths of the two sides are different, and the layers of the ridges on the two sides are different.
As shown in fig. 9, the upper cladding layer 100 and the lower cladding layer 102 are made of different materials, at least one of which is an electro-optic material. The core layer 101 is a single-sided ridge waveguide, one side of the ridge is etched, and the number of layers of the ridge is one.
As shown in fig. 10, the upper cladding layer 100 and the lower cladding layer 102 are made of different materials, at least one of which is an electro-optic material. The core layer 101 is a ridge waveguide on two sides, the two sides of the ridge are etched, the etching depth of the two sides is the same, the number of layers of the ridge is one, and the number of layers of the ridge on the two sides is the same.
As shown in fig. 11, the upper cladding layer 100 and the lower cladding layer 102 are made of different materials, at least one of which is an electro-optic material. The core layer 101 is a ridge waveguide on two sides, two sides of the ridge are etched, the etching depths of the two sides are different, the number of layers of the ridge is one, and the number of layers of the ridge on the two sides is the same.
As shown in fig. 12, the upper cladding layer 100 and the lower cladding layer 102 are made of different materials, at least one of which is an electro-optic material. The core layer 101 is a ridge waveguide on two sides, two sides of the ridge are etched, the etching depths of the two sides are different, and the layers of the ridges on the two sides are different.
As shown in fig. 13, the upper cladding layer 100 and the lower cladding layer 102 are made of different materials, at least one of which is an electro-optic material. The core layer 101 is a ridge waveguide on two sides, two sides of the ridge are etched, the etching depths of the two sides are different, and the layers of the ridges on the two sides are different.
As shown in fig. 14, the upper cladding layer 100 and the lower cladding layer 102 are made of different materials, at least one of which is an electro-optic material. The core layer 101 is a ridge waveguide on two sides, one side of the ridge is etched, the etching depth of the two sides is different, the number of layers of the ridges on the two sides is the same, and the modulating electrode 103 is positioned above the waveguide core layer 101 and is contacted with the waveguide core layer.
As shown in fig. 15 and 14, the upper cladding layer 100 and the lower cladding layer 102 are made of different materials, at least one of which is an electro-optic material. The core layer 101 is a ridge waveguide on two sides, two sides of the ridge are etched, the etching depths of the two sides are different, the layers of the ridges on the two sides are the same, and the modulation electrode 103 is positioned on one side of the waveguide core layer 101 and is contacted with the waveguide core layer.
As shown in fig. 16 and 14, the upper cladding layer 100 and the lower cladding layer 102 are made of different materials, at least one of which is an electro-optic material. The core layer 101 is a ridge waveguide on two sides, two sides of the ridge are etched, the etching depths of the two sides are different, the layers of the ridges on the two sides are the same, and the modulation electrode 103 is positioned at the lower part of the waveguide core layer 101 and is contacted with the lower part.
As shown in fig. 17 and 14, the upper cladding layer 100 and the lower cladding layer 102 are made of different materials, at least one of which is an electro-optic material. The core layer 101 is a ridge waveguide on two sides, two sides of the ridge are etched, the etching depths of the two sides are different, the layers of the ridges on the two sides are the same, and the modulation electrode 103 is in contact with the waveguide core layer 101 through other conductive materials 104.
As shown in fig. 18, the upper cladding layer 100 and the lower cladding layer 102 are made of different materials, at least one of which is an electro-optic material. The core layer 101 is a fully etched waveguide, and the modulating electrode 103 is in contact with the waveguide core layer 101 through other conductive materials 104.
As shown in fig. 19, the upper cladding layer 100 is an electro-optic material, and the core layer 101 is a periodic waveguide structure having a constant period.
As shown in fig. 20, the upper cladding layer 100 is an electro-optic material, and the core layer 101 is a periodic waveguide structure that varies periodically.
As shown in fig. 22, which is a working principle of the electro-optic phase modulator of the present invention, an electro-optic modulation waveguide is disposed in a cladding layer of an electro-optic material, two sides of the electro-optic modulation waveguide are respectively connected with a positive modulation electrode and a negative modulation electrode, a certain voltage is applied between the two modulation electrodes, an electric field distribution from the positive electrode to the negative electrode of the electrode is formed between two adjacent periodic waveguide structures due to the conductivity of the waveguide material, and according to the electro-optic effect, the refractive index of the electro-optic material in the electric field changes along with the change of the electric field intensity; therefore, by changing the voltage applied between the two electrodes, the refractive index of the electro-optic material in the electric field between the two electrodes can be changed, so that the phase of the light passing through the section of electro-optic modulation waveguide is changed, and the function of electro-optic phase modulation is realized. The micro-ring resonant cavity electro-optic intensity modulator has the working principle similar to that of an electro-optic phase modulator, and further realizes the change of the resonant wavelength of the micro-ring resonant cavity by modulating the phase through the electro-optic modulation waveguide in the micro-ring resonant cavity, when the wavelength of input light changes in the resonant state in the micro-ring resonant cavity (from resonance to non-resonance or from non-resonance to resonance), the intensity of output light correspondingly changes, the output light intensity is small when in resonance, and the output light intensity is large when not in resonance, and is about the input light power.
As shown in fig. 26, which is a principle of mach-zehnder electro-optic intensity modulation according to the present invention, similar to the above-mentioned electro-optic phase modulator principle, when an electric field is applied to an electro-optic modulation waveguide, the optical phase of the light passing through the waveguide changes, and since the directions of the electric fields applied by the two mach-zehnder interference arms are opposite, the optical phase changes have opposite signs, two beams of light passing through different phase changes interfere in the power combiner, and the light intensities of the interference outputs are different according to the differences of the phase, so that the phase difference of the two beams of light is changed by changing the voltage applied between the modulation electrodes, thereby realizing the modulation of the light intensities.
The specific implementation example and the implementation process of the invention are as follows:
example 1
As shown in FIG. 1, a high-speed electro-optic phase modulator using an electro-optic modulation waveguide is provided, wherein the left side of an input waveguide 1 is used as an input port, the right side of an output waveguide 8 is used as an output port, and two V are applied between a first modulation electrode 5a and a second modulation electrode 5b Off And V on The device of the embodiment is enabled to correspond to two working states of Off and On.
The cladding structure of this embodiment is shown in fig. 5, the modulating electrode arrangement is shown in fig. 14, and the upper cladding layer is made of an electro-optic material with an electro-optic coefficient of 192 pm/V.
Light is input from the left side of the input waveguide 1, and the electro-optical modulation waveguide 4 is input from the left side:
when the working state is Off, the voltage between the first modulating electrode 5a and the second modulating electrode 5b is V Off The equivalent refractive index of the electro-optically modulated waveguide 4 is n eff Length is L, the light is subjected to electro-optic modulationPhase increase of waveguide 4k is the wavenumber in vacuum and L is the length of the electro-optic modulation band 4.
When the working state is On, the voltage between the first modulating electrode 5a and the second modulating electrode 5b is V On At this time, the electric field distribution as shown in fig. 22 is generated between the adjacent finger-shaped periodic waveguides of the electro-optic modulation waveguide, and the refractive index of the electro-optic material located between the adjacent periodic structures of the electro-optic modulation waveguide is changed under the action of the electric field due to the electro-optic effect of the electro-optic material:
where n is the original refractive index of the electro-optic material, r 33 Is the electro-optic coefficient of the electro-optic material and d is the spacing between the periodic structures. Due to the change in refractive index of the electro-optic material, the equivalent refractive index of the modes in the electro-optic modulation waveguide also changes, and the relationship between them can be expressed as:
△n eff ＝S△n
wherein Δn represents the amount of refractive index change of the electro-optic material, Δn eff In the electro-optical modulation waveguide of the present invention, the mode field distribution is as shown in fig. 21, more optical fields are distributed in the electro-optical material, the change of the equivalent refractive index is enhanced, and according to fig. 25, the change of the equivalent refractive index is obtained along with the refractive index change curve of the electro-optical material, and s=1.145, which is far higher than that of the common waveguide structure. The increase in optical phase through the electro-optically modulated waveguide 4 also changes and can be expressed as:
where k is the wavenumber in vacuum and L is the length of the periodic structure. Thus, the half-wave voltage-length of the electro-optic phase modulator based on the electro-optic modulation waveguide of the present invention can be expressed as:
wherein V is π Represents the half-wave voltage of the electro-optic phase modulator, lambda being the operating wavelength. Here, a set of typical parameters for the invention using an electro-optically modulated waveguide electro-optical phase modulator is given: d=150 nm, λ=1.55 μm, s=1.145, n=1.66, r 33 =192 pm/V, calculated as half-wave voltage-length V π L=0.23 v·mm, far less than the integrated all-silicon modulators based on plasma dispersion effect and silicon-based modulators based on electro-optic materials have been reported.
As shown in fig. 23, which is a schematic circuit diagram of an electro-optic phase modulator based on an electro-optic modulation waveguide, the form of which can be equivalent to the equivalent circuit diagram in fig. 24, the electro-optic phase modulator of the present invention is calculated to load a voltage V across the electro-optic material eff And input voltage V in The relationship between them can be expressed as:
wherein j represents an imaginary number, C represents a capacitance between two adjacent periodic waveguide structures, ω represents an angular frequency of the modulated signal, R represents a resistance of the periodic waveguide structure, R S The resistance of the modulated signal source is typically 50Ω, and N represents the number of periodic structures included in the modulated waveguide.
As shown in FIG. 26, V is shown eff /V in The relation curve with the frequency f of the modulation signal, thus, the electro-optic phase modulator adopting the electro-optic modulation waveguide has the 3dB bandwidth of 176GHz limited by the RC constant of the circuit, which is far higher than the existing most modulators adopting the silicon plasma dispersion effect and the electro-optic effect, and the 3dB bandwidth of the latter modulator is generally tens of GHz.
According to the energy consumption E calculation formula:
wherein V is pp For modulating the voltage peak value, C is the total capacitance of the modulator, and the energy consumption of the electro-optic phase modulator is 1fJ/bit, which is calculated according to the formula and is superior to the reported power consumption of tens to hundreds of fJ/bit.
Example 2
As shown in fig. 2, a mach-zehnder electro-optical intensity modulator of an electro-optical modulation waveguide is adopted, the left side of an input waveguide 1 is an input port, and the right side of an output waveguide 8 is an output port. The voltage applied between the first modulating electrode 5a and the second modulating electrode 5b has two kinds of V Off1 And V on1 The device of the embodiment is enabled to correspond to two working states of Off and On. The voltage applied between the third modulating electrode 5c and the second modulating electrode 5b has two kinds of V Off2 And V on2 The device of the embodiment is enabled to correspond to two working states of Off and On.
The cladding structure of this embodiment is shown in fig. 5, the modulating electrode arrangement is shown in fig. 14, and the upper cladding layer is made of an electro-optic material with an electro-optic coefficient of 192 pm/V.
Light is input from the left side of the input waveguide 1, enters the power splitter 2, is split into two beams of equal energy, and the beam a and the beam B enter the first connecting waveguide 3a and the second connecting waveguide 3B respectively:
when the working state is Off, the voltage between the first modulating electrode 5a and the second modulating electrode 5b is V Off1 The voltage between the third modulating electrode 5c and the second modulating electrode 5b is V Off2 The light beam a passes through the first electro-optically modulated waveguide 4a with a phase increase ofThe light beam B passes through the second electro-optically modulated waveguide 4B with a phase increase of +.>The light beam A and the light beam B respectively pass through the third connecting waveguide6a and the fourth connecting waveguide 6B enter the power combiner 7, and when the light beam A and the light beam B are combined, the phase difference is +.>
When the working state is On, the voltage between the first modulating electrode 5a and the second modulating electrode 5b is V On1 The voltage between the third modulating electrode 5c and the second modulating electrode 5b is V On2 According to the working principle of the electro-optic phase modulator using the electro-optic modulation waveguide as above, the light beam a passes through the first electro-optic modulation waveguide 4a, and the phase increase changes toThe light beam B passes through the second electro-optical modulation waveguide 4B with a phase increase variation of +.>The light beam A and the light beam B enter the power combiner 7 through the third connecting waveguide 6a and the fourth connecting waveguide 6B respectively, and when the light beam A and the light beam B are combined, the phase difference is +.>
According to the working principle of the mach-zehnder interferometer, the relationship between the optical power entering the output waveguide 8 from the power combiner 7 and the phase difference between the light beam a and the light beam B is:
wherein I is in For the optical power input from the input port, I out For the optical power output from the output port, whenTaking outAnd->At different values, the optical power I output by the output port out Also different (in the case of an optimal modulation effect,)。
according to the operation principle of the phase modulator in the above-described embodiment 1, the phase difference generated by the light beams a and B passing through the electro-optically modulated waveguide in the On state and the Off state can be expressed as:
as shown in fig. 26, when a voltage is applied between the first modulating electrode 5a and the second modulating electrode 5b and between the second modulating electrode 5b and the third modulating electrode 5c, the direction of the electric field between the first modulating electrode 5a and the second modulating electrode 5b and the direction of the electric field between the second modulating electrode 5b and the third modulating electrode 5c are opposite, soThe mach-zehnder electro-optic intensity modulator half-wave voltage-length using an electro-optic modulation waveguide can be expressed as:
here, a set of typical parameters for the invention using an electro-optically modulated waveguide mach-zehnder electro-optic intensity modulator is given: d=2 μm, λ=1.55 μm, s=1, n=1.66, r 33 =192 pm/V, calculated as half-wave voltage-length V π L=0.12 v·mm, far less than the integrated all-silicon modulators based on the plasma dispersion effect that have been reported.
As shown in FIG. 27, a Mach-Zehnder electro-optic intensity modulator employing electro-optic modulation waveguides is provided in a form equivalent to the circuit diagram of FIG. 28 due to its half-wave voltage-length V π L=0.12 v·mm, onlyIn order to adopt 1/2 of the electro-optic phase modulator of the electro-optic modulation waveguide, the same modulation effect is realized under the same working voltage, the modulation length is only 1/2 of the electro-optic modulation waveguide, meanwhile, the Mach-Zehnder electro-optic intensity modulator of the electro-optic modulation waveguide adopts a pull-push structure, and the circuits of the first electro-optic modulation waveguide 4a and the second electro-optic modulation waveguide 4b are in parallel connection structures, so that the equivalent circuit is the same as that of the electro-optic phase modulator in the embodiment 1, the 3dB bandwidth and the energy consumption are the same as those of the electro-optic phase modulator, the 3dB bandwidth caused by the limitation of RC constant is 176GHz, and the energy consumption is 1fj/bit, and the two parameters are far beyond those of the reported or commercial silicon-based electro-optic modulator.
Example 3
As shown in fig. 3, an electro-optical modulation waveguide micro-ring resonant cavity electro-optical intensity modulator is adopted, the left side of an input waveguide 1 is an input port, the right side of an output band 5 is an input port, and input light is single-wavelength light with wavelength lambda. The voltage applied between the first modulating electrode 5a and the second modulating electrode 5b has two kinds of V Off And V on The device of the embodiment is enabled to correspond to two working states of Off and On.
The cladding structure of this embodiment is shown in fig. 5, the modulating electrode arrangement is shown in fig. 14, and the upper cladding layer is made of an electro-optic material with an electro-optic coefficient of 192 pm/V.
Light is input from the left side of the input waveguide 1, passing through a coupling region composed of the first coupling waveguide 9a and the second coupling waveguide 9 b:
when operating in Off state, the voltage between the first modulating electrode 5a and the second modulating electrode 5b is V Off At this time, the resonant wavelength lambda of the micro-ring resonant cavity Off Equal to the input light wavelength lambda, the input light resonates in the micro-ring resonator and there is no light output at the right end of the input waveguide 5.
When working in On state, the voltage between the first modulating electrode 5a and the second modulating electrode 5b is V On According to the working principle of the electro-optic phase modulator adopting the electro-optic modulation waveguide, the refractive index of the electro-optic material positioned between adjacent finger-shaped periodic waveguides of the electro-optic modulation waveguide is changed under the action of an electric field, and light is in the micro-ring resonant cavityPhase increase changes, resulting in a resonant wavelength lambda of the micro-ring resonator On Changes and is not equal to the input optical wavelength lambda, so that the input light does not resonate in the micro-ring resonator and will be output from the right end of the output waveguide 8. In summary, the voltage between the first modulating electrode 5a and the second modulating electrode 5b is changed from V Off Change to V On Modulation of the light intensity is achieved.
In this embodiment, the micro-ring resonant cavity electro-optic intensity modulator using the electro-optic modulation waveguide has a modulation structure similar to that of the electro-optic phase modulator using the electro-optic modulation waveguide in embodiment 1, so that the calculation of the half-wave voltage-length, the 3dB bandwidth of the modulation rate and the energy consumption are similar to those of embodiment 1, and will not be repeated.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (6)
1. A low bias large bandwidth electro-optic modulator, characterized by: the electro-optic modulator is a phase modulator with an electro-optic modulation waveguide, a Mach-Zehnder type electro-optic intensity modulator or a micro-ring resonant cavity type electro-optic intensity modulator, an electric field is applied to the electro-optic modulation waveguide by using a modulation electrode to realize the modulation of light intensity or phase, and the modulation electrode is electrically connected with the electro-optic modulation waveguide;
the electro-optical modulation waveguide is a waveguide structure formed by alternately arranging a plurality of waveguide units in the same period or in an interdigital mode with a changing period along the transmission direction, and the gaps among the waveguide units and the dimensions of the waveguide units can be the same or different;
the phase modulator with the electro-optic modulation waveguide comprises a cladding structure, an input waveguide (1), an electro-optic modulation waveguide (4), a first modulation electrode (5 a), a second modulation electrode (5 b) and an output waveguide (8), wherein the input waveguide (1), the electro-optic modulation waveguide (4), the first modulation electrode (5 b) and the output waveguide are coated in the cladding structure; the input waveguide (1), the electro-optic modulation waveguide (4) and the output waveguide (8) are sequentially connected, and the first modulation electrode (5 a) and the second modulation electrode (5 b) are respectively positioned at two sides near the electro-optic modulation waveguide (4) and are respectively and electrically connected with the electro-optic modulation waveguide (4);
the Mach-Zehnder type electro-optic intensity modulator with the electro-optic modulation waveguide comprises a cladding structure, an input waveguide (1), a power divider (2), a first connecting waveguide (3 a), a second connecting waveguide (3 b), a first electro-optic modulation waveguide (4 a), a second electro-optic modulation waveguide (4 b), a first modulation electrode (5 a), a second modulation electrode (5 b), a third modulation electrode (5 c), a third connecting waveguide (6 a), a fourth connecting waveguide (6 b), a power combiner (7) and an output waveguide (8), wherein the input waveguide (1), the power divider (2), the first connecting waveguide (3 a), the second connecting waveguide (3 b), the first electro-optic modulation waveguide (4 a), the second electro-optic modulation waveguide (4 b), the first modulation electrode (5 a), the second modulation electrode (5 b), the third modulation electrode (5 c), the third connecting waveguide (6 a), the fourth connecting waveguide (6 b) and the power combiner (8) are coated in the cladding structure; the input waveguide (1) is connected with an input port of the power divider (2), two output ports of the power divider (2) are respectively connected with two input ports of the first connecting waveguide (3 a) and the second connecting waveguide (3 b), an output end of the first connecting waveguide (3 a) is connected with an input end of the third connecting waveguide (6 a) through the first electro-optical modulation waveguide (4 a), an output end of the second connecting waveguide (3 b) is connected with an input end of the fourth connecting waveguide (6 b) through the second electro-optical modulation waveguide (4 b), an output end of the third connecting waveguide (6 a) and an output end of the fourth connecting waveguide (6 b) are respectively connected with two input ports of the power combiner (7), and an output port of the power combiner (7) is connected with the output waveguide (8); the first modulation electrode (5 a) and the second modulation electrode (5 b) are respectively positioned at two sides near the first electro-optic modulation waveguide (4 a) and are respectively electrically connected with the first electro-optic modulation waveguide (4 a); simultaneously, the second modulation electrode (5 b) and the third modulation electrode (5 c) are respectively positioned at two sides near the second electro-optic modulation waveguide (4 b) and are respectively electrically connected with the second electro-optic modulation waveguide (4 b);
the micro-ring resonant cavity type electro-optic intensity modulator with the electro-optic modulation waveguide comprises a cladding structure, an input waveguide (1), a first coupling waveguide (9 a), a second coupling waveguide (9 b), an electro-optic modulation waveguide (4), a first modulation electrode (5 a), a second modulation electrode (5 b) and an output waveguide (8), wherein the input waveguide (1), the first coupling waveguide (9 a), the second coupling waveguide (9 b), the electro-optic modulation waveguide (4) are coated in the cladding structure; the input waveguide (1), the first coupling waveguide (9 a) and the output waveguide (8) are sequentially connected, the first coupling waveguide (9 a) and the second coupling waveguide (9 b) are in coupling arrangement, and the second coupling waveguide (9 b) and the electro-optic modulation waveguide (4) are connected end to form a micro-ring resonant cavity; the first modulation electrode (5 a) and the second modulation electrode (5 b) are respectively arranged on both sides near the electro-optical modulation waveguide (4) and are respectively electrically connected with the electro-optical modulation waveguide (4).
2. A low bias large bandwidth electro-optic modulator as claimed in claim 1, wherein: the cladding structure is a cladding structure with a symmetrical or asymmetrical waveguide section.
3. A low bias large bandwidth electro-optic modulator as claimed in claim 2, wherein: the cladding structure mainly comprises an upper cladding layer (100) and a lower cladding layer (102), wherein the refractive indexes of the upper cladding layer (100) and the lower cladding layer (102) are equal.
4. A low bias large bandwidth electro-optic modulator as claimed in claim 1, wherein: the cladding structure is asymmetric up and down or left and right on a section perpendicular to the transmission direction by taking the core layer (101) as a center, wherein the asymmetry means that the refractive indexes are different or at least one of the thickness and the width is different.
5. A low bias large bandwidth electro-optic modulator according to any of claims 1-2, wherein: each waveguide is used as a core layer (101) and is a full-etched waveguide or a single-side ridge waveguide or a double-side ridge waveguide; in the case of a double-sided ridge waveguide, the number of layers, height, or length of the two-sided ridge may be equal or unequal.
6. A low bias large bandwidth electro-optic modulator according to any of claims 1-2, wherein: the cladding structure mainly comprises an upper cladding (100) covered on the core layer (101) and a lower cladding (102) positioned below the core layer (101), and the waveguide is used as the core layer (101); each of the modulation electrodes is simultaneously located at a plurality of different positions in an upper portion of the upper cladding layer (100), an inside of the lower cladding layer (102), or between the upper cladding layer (100) and the lower cladding layer (102), or each of the modulation electrodes is respectively located at a plurality of different positions in the upper portion of the upper cladding layer (100), an inside of the lower cladding layer (102), or between the upper cladding layer (100) and the lower cladding layer (102).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710543357.8A CN107238951B (en) | 2017-07-05 | 2017-07-05 | Low bias large bandwidth electro-optic modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710543357.8A CN107238951B (en) | 2017-07-05 | 2017-07-05 | Low bias large bandwidth electro-optic modulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107238951A CN107238951A (en) | 2017-10-10 |
| CN107238951B true CN107238951B (en) | 2023-10-27 |
Family
ID=59991376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710543357.8A Active CN107238951B (en) | 2017-07-05 | 2017-07-05 | Low bias large bandwidth electro-optic modulator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107238951B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110149153B (en) * | 2018-02-13 | 2020-12-01 | 华为技术有限公司 | Optical modulator, modulation method and optical modulation system |
| CN111025691A (en) * | 2019-11-04 | 2020-04-17 | 中国人民解放军战略支援部队航天工程大学 | Low-voltage large-view-field electro-optic modulator based on longitudinal electro-optic effect |
| CN113625476B (en) * | 2020-05-07 | 2024-06-18 | 华为技术有限公司 | Electro-optical modulator, electro-optical modulation circuit, and optical communication device |
| CN112946342A (en) * | 2021-01-25 | 2021-06-11 | 重庆大学 | Voltage measurement system and method based on electro-optic polymer and micro-ring resonator |
| CN116009156A (en) * | 2021-10-21 | 2023-04-25 | 华为技术有限公司 | Electro-optical modulator, optical module and optical transmission device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1308797A (en) * | 1998-07-10 | 2001-08-15 | 西门子公司 | method for polarization mode dispersion compensation and polarization mode dispersion compensator |
| US6320990B1 (en) * | 1999-03-05 | 2001-11-20 | Nu-Wave Photonics, Inc. | High-performance electro-optic intensity modulator using polymeric waveguides and grating modulation |
| CN101334534A (en) * | 2008-07-29 | 2008-12-31 | 浙江大学 | Electro optic modulator based on horizontal narrow slit flat-plate and photon crystal linear defect wave-guide |
| CN105158850A (en) * | 2015-07-23 | 2015-12-16 | 电子科技大学 | Electro-optic mode converter with Mach-Zehnder interferometer structure and implementing method thereof |
| CN105934703A (en) * | 2014-01-24 | 2016-09-07 | 思科技术公司 | Electro-optical modulator with vertical capacitor structure |
| CN106716239A (en) * | 2014-09-24 | 2017-05-24 | 柏林工业大学 | Injection modulator |
-
2017
- 2017-07-05 CN CN201710543357.8A patent/CN107238951B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1308797A (en) * | 1998-07-10 | 2001-08-15 | 西门子公司 | method for polarization mode dispersion compensation and polarization mode dispersion compensator |
| US6320990B1 (en) * | 1999-03-05 | 2001-11-20 | Nu-Wave Photonics, Inc. | High-performance electro-optic intensity modulator using polymeric waveguides and grating modulation |
| CN101334534A (en) * | 2008-07-29 | 2008-12-31 | 浙江大学 | Electro optic modulator based on horizontal narrow slit flat-plate and photon crystal linear defect wave-guide |
| CN105934703A (en) * | 2014-01-24 | 2016-09-07 | 思科技术公司 | Electro-optical modulator with vertical capacitor structure |
| CN106716239A (en) * | 2014-09-24 | 2017-05-24 | 柏林工业大学 | Injection modulator |
| CN105158850A (en) * | 2015-07-23 | 2015-12-16 | 电子科技大学 | Electro-optic mode converter with Mach-Zehnder interferometer structure and implementing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 铌酸锂电光长周期波导光栅;郑建成 等;电子科技大学学报;第第38卷卷(第第5期期);电子科技大学学报 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107238951A (en) | 2017-10-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107238951B (en) | Low bias large bandwidth electro-optic modulator | |
| CN107290874B (en) | Large bandwidth electro-optic modulator | |
| KR100876503B1 (en) | Optical switch | |
| US8014636B2 (en) | Electrical contacts on top of waveguide structures for efficient optical modulation in silicon photonic devices | |
| US8346025B2 (en) | Compact electrooptic modulator | |
| CN112363331B (en) | Silicon-based lithium niobate mixed electro-optical modulator | |
| US8676017B2 (en) | Light control element and optical waveguide circuit | |
| CN108693602B (en) | Silicon nitride three-dimensional integrated multi-microcavity resonant filter device and preparation method thereof | |
| JP2019008163A (en) | Electroabsorption modulator | |
| CN113325612A (en) | Thin film lithium niobate electro-optic modulator and preparation method thereof | |
| JP6992961B2 (en) | Electro-optic modulator | |
| CN110456528A (en) | A kind of plasma electric optical modulator of twin-guide manifold type | |
| CN115586663A (en) | Thin-film lithium niobate electro-optical modulator based on differential drive and push-pull | |
| JP2019159273A (en) | Electro-absorption optical modulator | |
| CN106019643A (en) | Wafer structure for Mach-Zehnder optical modulator | |
| CN209117999U (en) | A kind of big bandwidth electrooptic modulator | |
| CN105404028B (en) | A kind of silicon-based electro-optical modulator of microcavity coupling multimode interferometer | |
| JP2018128506A (en) | Light modulator | |
| JP2014123032A (en) | Optical modulator | |
| CN209118000U (en) | A kind of big bandwidth electrooptic modulator of low bias | |
| WO2022042229A1 (en) | Traveling wave electrode modulator and photonic integrated chip | |
| KR20140075404A (en) | Graphene photonic devices | |
| Liang et al. | A Mach-Zehnder Modulator Based on Silicon Nitride Loaded Waveguide in Z-cut Thin Film Lithium Niobate | |
| CN117289525A (en) | Heterogeneous integrated thin film lithium niobate electro-optical modulator | |
| CN117092837A (en) | Groove waveguide-based photoelectric modulator for optical network-on-chip interconnection |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |