CN202548464U - Micro-ring light switch based on electric absorption characteristic of graphene - Google Patents
Micro-ring light switch based on electric absorption characteristic of graphene Download PDFInfo
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- CN202548464U CN202548464U CN2012201916647U CN201220191664U CN202548464U CN 202548464 U CN202548464 U CN 202548464U CN 2012201916647 U CN2012201916647 U CN 2012201916647U CN 201220191664 U CN201220191664 U CN 201220191664U CN 202548464 U CN202548464 U CN 202548464U
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Abstract
The utility model discloses a micro-ring light switch based on the electric absorption characteristic of graphene. The micro-ring light switch comprises a light micro ring, two coupling waveguides and a graphene capacitance structure layer, which are on the same horizontal plane, wherein the two coupling waveguides are arranged on two sides of the light micro ring; the graphene capacitance structure layer covers the light micro ring; one end of one of the two coupling waveguides is an input end, and the other end of the coupling waveguide is a direct output end; one end of the other coupling waveguide, which is opposite to the input end, is a downloading end; the input end is connected with an input waveguide; and the direct output end and the downloading end are respectively connected with two output waveguides. The resonance state of the light micro ring is changed by changing external voltage, so a light signal is switched between two output ports, and functions of the micro-ring light switch are realized. The micro-ring light switch is low in required applied voltage, high in response speed and completely compatible with the conventional complementary metal oxide semiconductor (CMOS) process, and has large-scale production potential, and the graphene and insulating materials are added to a basic light micro-ring structure.
Description
Technical field
The utility model relates to a kind of little ring photoswitch, particularly a kind of little ring photoswitch based on Graphene electric absorption characteristic.
Background technology
Photoswitch is played the part of important effect as channel switching device in optical communication network of future generation.People utilize various structure, have successfully developed multiple photoswitch.The realization principle of photoswitch is very many, for the photoswitch that is applied to broadband light space switching function, through utilizing the variations in refractive index of material, adopts Y splitter structure, Mach-Zehder structure or directional coupling structure to realize; In recent years, along with the development of silicon based photon technology, little ring structure widespread use is through the empty switch-dividing function of the mobile realization wavelength selection type light that utilizes resonance wavelength.But along with growing with each passing day of information data amount explosion type, traditional optical switch switch speed can't satisfy people's message exchange demand gradually, and people press for and utilize new material, new technology manufacturing to have the photoswitch of channel switch speed faster.Simultaneously, the non-self-sustaining switch of traditional optical need consume many energy when switching channels, and this defective is also demanded urgently remedying under the strategic objective of national energy-saving and emission-reduction.
In recent years, this material with good electrical, optical characteristics of Graphene obtains the increasing concern of industry, and the making that the numerous and confused trial of people applies it to optical component comes up.Grapheme material for forming capacitance structure can have different carrier concentrations under different impressed voltages, such structure has differing absorption efficient for the light signal that in the middle of the silicon waveguide, transmits.Be applied to the photoswitch design for this absorption effect, can't adopt the optical texture of traditional variations in refractive index to obtain light space switching function.Utilize Graphene itself to have this characteristic of high electron mobility, novel little ring photoswitch that the speed that can produce is exceedingly fast, power consumption is lower has good application prospects in high capacity optical communication system of future generation.
Summary of the invention
The purpose of the utility model is to provide a kind of little ring photoswitch based on Graphene electric absorption characteristic, can realize superelevation channel switch speed and low switch voltage.
The utility model solves the technical scheme that its technical matters adopted:
Comprise the little ring of light, two coupled waveguides and Graphene capacitance structure layer; Article two, coupled waveguide is placed on the both sides of the little ring of light, and Graphene capacitance structure layer covers on the little ring of light, and the little ring of light, two coupled waveguides, Graphene capacitance structure layer are all on same surface level; Article two, an end of any coupled waveguide in the coupled waveguide is an input end; The other end is direct output terminal; Another coupled waveguide end corresponding with input end is for downloading end, and input end is connected with input waveguide, and directly output terminal and download are held respectively with output waveguide separately and be connected.
Described Graphene capacitance structure layer comprises ground floor Graphene, megohmite insulant and second layer Graphene; Covering intersection at Graphene capacitance structure layer and the little ring of light; The ground floor Graphene covers on the little ring of light; Megohmite insulant covers on the ground floor Graphene, and second layer Graphene covers on the megohmite insulant, and the ground floor Graphene links to each other with the two poles of the earth of electrode respectively with second layer Graphene elongated end.
Described Graphene capacitance structure layer comprises ground floor Graphene, megohmite insulant and transparency electrode; Covering intersection at Graphene capacitance structure layer and the little ring of light; The ground floor Graphene covers on the little ring of light; Megohmite insulant covers on the ground floor Graphene, and transparency electrode covers on the megohmite insulant, and ground floor Graphene elongated end links to each other with the two poles of the earth of electrode respectively with transparency electrode.
The little ring of described light, two coupled waveguides and Graphene capacitance structure layer all are placed on the doped silicon substrate, and Graphene capacitance structure layer comprises megohmite insulant and ground floor Graphene; At the covering intersection of Graphene capacitance structure layer and the little ring of light, megohmite insulant covers on the little ring of light, and the ground floor Graphene covers on the megohmite insulant, and ground floor Graphene elongated end links to each other with the two poles of the earth of electrode respectively with doped silicon substrate.
The little ring of described light is any closed loop shape.
Described Graphene capacitance structure layer covers on the whole or local little ring of light.
The useful effect that the utlity model has is:
The utility model proposes to utilize resonance and mistake the shake state of little ring under different loss characteristics to realize the empty switch-dividing function of light.When not adding driving voltage, Graphene can produce fairly obvious assimilation effect to photon, and therefore little ring can't get into the state that shakes that loses to light signal generating resonance, and light signal will get into one of them output waveguide from direct output terminal; Suitably increase driving voltage, when Graphene was not obvious to the absorption of photon, silicon-based micro ring was in the resonance shape, can good coupling take place with coupled waveguide, and light signal gets into another output waveguide through little ring from downloading end.According to this principle, just can realize the effect of photoswitch through changing the outbound course that impressed voltage changes light signal.The high electron mobility characteristic of utilizing Graphene to have can realize other optical channel switch speed of THz level, far is more than other common electrical light of current GHz level, thermo-optical switch, is fit to very much be applied to high capacity optical communication network of future generation; The absorption coefficient that Graphene is big changes, and can realize low switch voltage; Adopt the most basic silicon-based micro ring structure, can use plane integrated light guide technology to make, have good CMOS processing compatibility, have the potentiality of large-scale production.And its required WV that applies is very low, energy-conserving and environment-protective.
Description of drawings
Fig. 1 is the structural drawing of the utility model.
Fig. 2 is that the little ring of light, two coupled waveguides and Graphene capacitance structure layer all are placed on the structural drawing on the doped silicon substrate.
Fig. 3 is the first kind schematic cross-section of the utility model at the covering intersection of Graphene capacitance structure layer and the little ring of light.
Fig. 4 is the second kind schematic cross-section of the utility model at the covering intersection of Graphene capacitance structure layer and the little ring of light.
Fig. 5 is the utility model the third schematic cross-section at the covering intersection of Graphene capacitance structure layer and the little ring of light.
Among the figure: 1, the little ring of light, 2, input end, 3, direct output terminal, 4, download end, 5, Graphene capacitance structure layer, 6, doped silicon substrate, 7, the ground floor Graphene, 8, megohmite insulant, 9, second layer Graphene, 10, transparency electrode.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the utility model is done further explain.
As shown in Figure 1, the utility model comprises the little ring of light 1, two coupled waveguides and Graphene capacitance structure layers 5; Article two, coupled waveguide is placed on the both sides of the little ring 1 of light, and Graphene capacitance structure layer 5 covers on the little ring 1 of light, and the little ring of light 1, two coupled waveguides, Graphene capacitance structure layer 5 are all on same surface level; Article two, an end of any coupled waveguide in the coupled waveguide is an input end 2; The other end is direct output terminal 3; Another coupled waveguide holds 4 with input end 2 corresponding ends for downloading; Input end 2 is connected with input waveguide, and directly output terminal 3 holds 4 to be connected with output waveguide separately respectively with downloading.
As shown in Figure 3, the little ring of described light 1, two coupled waveguides and Graphene capacitance structure layer 5 all are placed on the substrate, and Graphene capacitance structure layer 5 comprises ground floor Graphene 7, megohmite insulant 8 and second layer Graphene 9; At the covering intersection of Graphene capacitance structure layer 5 with the little ring 1 of light; Ground floor Graphene 7 covers on the little ring 1 of light; Megohmite insulant 8 covers on the ground floor Graphene 7; Second layer Graphene 9 covers on the megohmite insulant 8, and ground floor Graphene 7 links to each other with the two poles of the earth of electrode respectively with second layer Graphene 9 elongated ends.
As shown in Figure 4, the little ring of described light 1, two coupled waveguides and Graphene capacitance structure layer 5 all are placed on the substrate, and Graphene capacitance structure layer 5 comprises ground floor Graphene 7, megohmite insulant 8 and transparency electrode 10; At the covering intersection of Graphene capacitance structure layer 5 with the little ring 1 of light; Ground floor Graphene 7 covers on the little ring 1 of light; Megohmite insulant 8 covers on the ground floor Graphene 7; Transparency electrode 10 covers on the megohmite insulant 8 above the little ring 1 of light, and ground floor Graphene 7 elongated ends link to each other with the two poles of the earth of electrode respectively with transparency electrode 10.
Like Fig. 2 and shown in Figure 5, the little ring of described light 1, two coupled waveguides and Graphene capacitance structure layer 5 all are placed on the doped silicon substrate 6, and Graphene capacitance structure layer 5 comprises megohmite insulant 8 and ground floor Graphene 7; At the covering intersection of Graphene capacitance structure layer 5 with the little ring 1 of light, megohmite insulant 8 covers on the little ring 1 of light, and ground floor Graphene 7 covers on the megohmite insulant 8, and ground floor Graphene 7 elongated ends link to each other with the two poles of the earth of electrode respectively with doped silicon substrate 6.
The little ring 1 of described light is any closed loop shape.
Described Graphene capacitance structure layer 5 covers on the whole or local little ring 1 of light.
Not vertical each other between described two coupled waveguides, need confirm that at first wherein an end of a coupled waveguide is an input end, the other end is direct output terminal.When if two coupled waveguides are parallel, another coupled waveguide and input end are held for downloading at an end of the little ring of light the same side; If two coupled waveguide intersects, and intersects at the side near input end, more hold for downloading in another coupled waveguide so near an end of input end; If two coupled waveguide intersects, and intersects at the side away from input end, the end further from input end is held for downloading in another coupled waveguide so.
The material of described substrate can adopt silicon dioxide or silicon nitride.
The utility model can through but be not limited to following mode and implement:
Embodiment 1:
The making of silica-based waveguides: adopting top layer silicon thick is silicon (SOI) material on the insulation course of 220 nm, buried silicon oxide layer 1 μ m; After accomplishing the crystal column surface cleaning; Carry out deep-UV lithography and obtain the silicon etching mask,, produce the silicon strip waveguide of wide 400 nm, dark 220 nm through the silicon dry etching; Acquisition is by the little ring 1 of the light of radius 10 μ m and two basic light channel structures that coupled waveguide constitutes, and the coupling gap that the little ring of waveguide and light is 1 is 200 nm.Wherein two coupled waveguides should guarantee parallel to each other as far as possible.Remove mask, and carry out surface clean.
The transfer of ground floor Graphene 7: adopt the mechanical transfer method, ground floor Graphene 7 is transferred to the SOI wafer upper surface of the little ring 1 of made light.Adopt photoetching, dry etching, the ground floor Graphene that is shifted is made for 7 layers, only keep the part and the related electrode lead-in wire position of the upper surface of little ring 1 structure of light.
The making of dielectric layer: adopt ald (ALD) technology, make the megohmite insulant 8 (for example alundum (Al) of one deck 10nm.
The transfer of second layer Graphene 9: adopt the mechanical transfer method, second layer Graphene 9 is transferred to the SOI wafer upper surface of the little ring 1 of light that is manufactured with megohmite insulant 8 (for example alundum (Al).Adopt photoetching, dry etching, the second layer Graphene 9 that is shifted is made, only keep the part and the related electrode lead-in wire position of the upper surface of little ring 1 structure of light.
The making of last protective seam and electrode: adopt chemical vapor deposition technology, make the silicon dioxide of one deck 5000 nm.Adopt photoetching, dry etching, produce the electrode through hole, the contact conductor of ground floor Graphene 7 and second layer Graphene 9 is partly exposed to the open air.Adopt sputtering technology, deposit the gold metal layer of 1000 nm.Adopt photoetching, dry etching, produce gold electrode.
Thus, accomplishing optical switch chip makes.The photoswitch speed of made can reach 1THz, switching voltage 1V.
Embodiment 2:
The making of silica-based waveguides: adopting top layer silicon thick is silicon (SOI) material on the insulation course of 220 nm, buried silicon oxide layer 1 μ m; After accomplishing the crystal column surface cleaning; Carry out deep-UV lithography and obtain the silicon etching mask,, produce the silicon strip waveguide of wide 450 nm, dark 180 nm through the silicon dry etching; Acquisition is by the little ring 1 of the light of radius 5 μ m and two basic light channel structures that coupled waveguide constitutes, and the coupling gap that the little ring of waveguide and light is 1 is 180 nm.Wherein two coupled waveguides should guarantee parallel to each other as far as possible.Remove mask, and carry out surface clean.
The making of dielectric layer: adopt ald (ALD) technology, make the megohmite insulant 8 (for example alundum (Al) of one deck 10nm.
The transfer of ground floor Graphene 7: adopt the mechanical transfer method, ground floor Graphene 7 is transferred to the SOI wafer upper surface of the little ring 1 of made light.Adopt photoetching, dry etching, the ground floor Graphene 7 that is shifted is made, only keep the part and the related electrode lead-in wire position of the upper surface of little ring 1 structure of light.
The making of transparency electrode 10: adopt the electron beam film growth techniques, produce indium tin oxide transparency electrode 10.Adopt photoetching, dry etching, the indium tin oxide transparency electrode 10 of made is made, only keep the part and the related electrode lead-in wire position of the upper surface of little ring 1 structure of light.
The making of last protective seam and electrode: adopt chemical vapor deposition technology, make the silicon dioxide of one deck 5000 nm.Adopt photoetching, dry etching, produce the electrode through hole, the contact conductor of ground floor Graphene 7 and indium tin oxide transparency electrode 10 is partly exposed to the open air.Adopt sputtering technology, deposit the aluminum metal layer of 1000 nm.Adopt photoetching, dry etching, produce the aluminium electrode.
Thus, accomplishing optical switch chip makes.The photoswitch speed of made can reach 100GHz, switching voltage 1V.
Embodiment 3:
The making of silica-based waveguides: adopting top layer silicon thick is silicon (SOI) material on the insulation course of 340 nm, buried silicon oxide layer 1 μ m; Utilize standard CMOS process, after accomplishing the crystal column surface cleaning, carry out deep-UV lithography and obtain the silicon etching mask; Through the silicon dry etching; Produce the silicon ridge waveguide of wide 300 nm, dark 220 nm, obtain by the little ring 1 of the light of radius 10 μ m and two basic light channel structures that coupled waveguide constitutes, the coupling gap that the little ring of waveguide and light is 1 is 150 nm.Wherein two coupled waveguides should guarantee parallel to each other as far as possible.Remove mask, and carry out surface clean.
The making of dielectric layer: adopt ald (ALD) technology, make the megohmite insulant 8 (for example alundum (Al) of one deck 10nm.
The transfer of ground floor Graphene 7: adopt the mechanical transfer method, ground floor Graphene 7 is transferred to the SOI wafer upper surface of the little ring 1 of light that is manufactured with megohmite insulant 8 (for example alundum (Al).Adopt photoetching, dry etching, the ground floor Graphene 7 that is shifted is made, only keep the part and the related electrode lead-in wire position of the upper surface of little ring 1 structure of light.
The making of last protective seam and electrode: adopt chemical vapor deposition technology, make the silicon nitride of one deck 5000 nm.Adopt photoetching, dry etching, produce the electrode through hole, the contact conductor of SOI top layer silicon and ground floor Graphene 7 is partly exposed to the open air.Adopt electron beam evaporation technique, deposit the aluminum metal layer of 1500 nm.Adopt photoetching, dry etching, produce the aluminium electrode.
Thus, accomplishing optical switch chip makes.The photoswitch speed of made can reach 200GHz, switching voltage 1V.
Claims (6)
1. little ring photoswitch based on Graphene electric absorption characteristic is characterized in that: comprise the little ring of light (1), two coupled waveguides and Graphene capacitance structure layer (5); Article two, coupled waveguide is placed on the both sides of the little ring of light (1), and Graphene capacitance structure layer (5) covers on the little ring of light (1), and the little ring of light (1), two coupled waveguides, Graphene capacitance structure layer (5) are all on same surface level; Article two, an end of any coupled waveguide in the coupled waveguide is input end (2); The other end is direct output terminal (3); The end that another coupled waveguide is corresponding with input end (2) is held (4) for downloading; Input end (2) is connected with input waveguide, and directly output terminal (3) holds (4) to be connected with output waveguide separately respectively with downloading.
2. a kind of little ring photoswitch according to claim 1 based on Graphene electric absorption characteristic, it is characterized in that: described Graphene capacitance structure layer (5) comprises ground floor Graphene (7), megohmite insulant (8) and second layer Graphene (9); At the covering intersection of Graphene capacitance structure layer (5) with the little ring of light (1); Ground floor Graphene (7) covers on the little ring of light (1); Megohmite insulant (8) covers on the ground floor Graphene (7); Second layer Graphene (9) covers on the megohmite insulant (8), and ground floor Graphene (7) links to each other with the two poles of the earth of electrode respectively with second layer Graphene (9) elongated end.
3. a kind of little ring photoswitch according to claim 1 based on Graphene electric absorption characteristic, it is characterized in that: described Graphene capacitance structure layer (5) comprises ground floor Graphene (7), megohmite insulant (8) and transparency electrode (10); At the covering intersection of Graphene capacitance structure layer (5) with the little ring of light (1); Ground floor Graphene (7) covers on the little ring of light (1); Megohmite insulant (8) covers on the ground floor Graphene (7); Transparency electrode (10) covers on the megohmite insulant (8), and ground floor Graphene (7) elongated end links to each other with the two poles of the earth of electrode respectively with transparency electrode (10).
4. a kind of little ring photoswitch according to claim 1 based on Graphene electric absorption characteristic; It is characterized in that: the little ring of described light (1), two coupled waveguides and Graphene capacitance structure layer (5) all are placed on the doped silicon substrate (6), and Graphene capacitance structure layer (5) comprises megohmite insulant (8) and ground floor Graphene (7); At the covering intersection of Graphene capacitance structure layer (5) with the little ring of light (1); Megohmite insulant (8) covers on the little ring of light (1); Ground floor Graphene (7) covers on the megohmite insulant (8), and ground floor Graphene (7) elongated end links to each other with the two poles of the earth of electrode respectively with doped silicon substrate (6).
5. a kind of little ring photoswitch based on Graphene electric absorption characteristic according to claim 1 is characterized in that: the little ring of described light (1) is any closed loop shape.
6. a kind of little ring photoswitch based on Graphene electric absorption characteristic according to claim 1 is characterized in that: described Graphene capacitance structure layer (5) covers on the whole or local little ring of light (1).
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| CN2012201916647U CN202548464U (en) | 2012-05-02 | 2012-05-02 | Micro-ring light switch based on electric absorption characteristic of graphene |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102662254A (en) * | 2012-05-02 | 2012-09-12 | 浙江大学 | Micro-ring optical switch based on electric absorption characteristics of graphene |
| WO2015154307A1 (en) * | 2014-04-11 | 2015-10-15 | 华为技术有限公司 | Graphene-based electro-absorption optical modulator and method for manufacture thereof |
| WO2015161538A1 (en) * | 2014-04-24 | 2015-10-29 | 电子科技大学 | Device for stabilizing spectrum of micro-ring resonator |
-
2012
- 2012-05-02 CN CN2012201916647U patent/CN202548464U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102662254A (en) * | 2012-05-02 | 2012-09-12 | 浙江大学 | Micro-ring optical switch based on electric absorption characteristics of graphene |
| CN102662254B (en) * | 2012-05-02 | 2014-07-23 | 浙江大学 | Micro-ring optical switch based on electric absorption characteristics of graphene |
| WO2015154307A1 (en) * | 2014-04-11 | 2015-10-15 | 华为技术有限公司 | Graphene-based electro-absorption optical modulator and method for manufacture thereof |
| WO2015161538A1 (en) * | 2014-04-24 | 2015-10-29 | 电子科技大学 | Device for stabilizing spectrum of micro-ring resonator |
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Granted publication date: 20121121 Effective date of abandoning: 20140723 |
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| RGAV | Abandon patent right to avoid regrant |