CN101907785B - A kind of method for making of photomodulator PN junction - Google Patents
A kind of method for making of photomodulator PN junction Download PDFInfo
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- CN101907785B CN101907785B CN201010198509.3A CN201010198509A CN101907785B CN 101907785 B CN101907785 B CN 101907785B CN 201010198509 A CN201010198509 A CN 201010198509A CN 101907785 B CN101907785 B CN 101907785B
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- photomodulator
- ion implantation
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- making
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Abstract
The invention discloses a kind of method for making of photomodulator PN junction, the method comprises the steps: to provide a substrate; Described substrate exposed and etches, forming target light waveguide and modulator figure; Light dope N is carried out to the described substrate through over etching
-ion implantation; Utilize the second mask to described through light dope N
-substrate after ion implantation carries out doped with P
-ion implantation.Due to only a mask need be used in manufacturing process, thus save the cost of manufacture for PN junction in photomodulator, and alignment error when avoiding the exposure of two-layer mask existence.
Description
Technical field
The present invention relates to a kind of photomodulator continuous print incident light being converted to discrete light signal that can be controlled by electric signal, particularly relate to a kind of method for making of photomodulator PN junction.
Background technology
Photomodulator also claims electrooptic modulator, and being the Primary Component of high speed, long-distance optical communication, is also one of most important integrated optical device.It is the device being exported the refractive index of light, absorptivity, amplitude or phase place by the change final regulation and control of voltage or electric field.The basic theories of its institute's foundation is various multi-form electrooptical effect, acoustooptic effect, magneto-optic effect, carrier dispersion effect etc.Launch at the light of overall optical communication, transmit, in receiving course, photomodulator is used to the intensity controlling light, and its effect is very important.
Mach-Zehnder Mach-Zehender (M-Z) type photomodulator is that input light is divided into two light branch roads that the equal signal of two-way enters modulator respectively, the material that these two light branch roads adopt is arc material, the electric signal size that its refractive index applies with outside and changing.Variations in refractive index due to light branch road can cause the change of signal phase, when two tributary signal modulator output terminals combine again, the interference signal that the light signal synthesized will be an intensity size variation, be equivalent to the change change of electric signal being converted to light signal, achieve the modulation of light signal.
In the last few years, due to lithium niobate (LiNbO
3) characteristic such as the low-loss of waveguide, high electrical efficiency, lithium niobate obtains using more and more widely in the photomodulator of 2.5Gb/s and higher rate.Based on the LiNbO of Mach-Zehnder (M-Z) waveguiding structure
3travelling-wave modulator has become most popular modulator in existing system.
And, in order to improve the speed of M-Z type photomodulator further, reduce its power consumption simultaneously, proposed at present and Silicon-On-Insulator (SOI:Silicon On Insulator) technology is adopted to M-Z type photomodulator, be produced on Silicon-On-Insulator substrate by M-Z type photomodulator.Wherein, in SOI M-Z type photomodulator, diode plays very important effect.Compare with general-purpose diode, structurally unlike, the PN junction in photomodulator is produced in the optical waveguide of various shape usually, and light needs through the side of this PN junction, and therefore, the junction depth of PN junction is very shallow, is generally less than 1 micron.
Please refer to Fig. 1, Fig. 1 is the making step process flow diagram of existing photomodulator PN junction, and as shown in Figure 1, the making of existing photomodulator PN junction comprises the steps:
One substrate is provided, please refer to Fig. 2, Fig. 2 is substrat structure schematic diagram, wherein this substrate 100 is SOI substrate silicon chip, the silicon fiml 103 comprising silicon substrate 101, be positioned at the buried oxide (BOX:BuriedOxide Layer) 102 on described silicon substrate 101 and be positioned in described buried oxide 102;
Described substrate is exposed and etches, form target light waveguide and modulator figure, please refer to Fig. 3, Fig. 3 is the structural representation of the substrate after etching, and as shown in Figure 3, the two ends of silicon fiml 103 are etched away, expose buried oxide 102, the silicon fiml 103 do not etched away forms the low ledge structure in middle high two ends, and this is to make incident light more concentrated, makes it propagate in silicon fiml 103 better;
The first mask is utilized to carry out light dope N to the described substrate through over etching
-ion implantation, please refer to Fig. 4, and Fig. 4 is existing N
-the schematic diagram of ion implantation, as shown in Figure 4, is carrying out N to the described substrate through over etching
-have employed the first mask 201 during ion implantation, thus make the half region of described silicon fiml 103 after over etching to carry out N
-doping, wherein, described N
-the concentration of ion is 10
12/ cm
2~ 10
13/ cm
2;
Utilize the second mask to described through light dope N
-the substrate of ion implantation carries out doped with P
-ion implantation, please refer to Fig. 5, and Fig. 5 is existing P
-the schematic diagram of ion implantation, as shown in Figure 5, through N
-after ion implantation, the half region of described silicon fiml 103 after over etching forms N
-doped region 104, to described through N
-the substrate of ion implantation carries out P
-have employed the second mask 202 during ion implantation, thus make second half region of described silicon fiml 103 after over etching to carry out P
-doping, wherein, described P
-the concentration of ion is described N
-one to ten times of the concentration of ion.Be existing through P please continue to refer to Fig. 6, Fig. 6
-device schematic cross-section after ion implantation, as shown in Figure 6, through P
-after ion implantation, the half region of described silicon fiml 103 after over etching forms N
-doped region 104, second half region forms P
-doped region 105, thus form photomodulator PN junction.
But the method for making of existing photomodulator PN junction needs two masks, and due to the cost intensive of mask, therefore the cost of manufacture of existing photomodulator PN junction is higher, and has N
-and P
-alignment error during two-layer mask exposure, may cause fabrication error, thus have certain influence to device performance.
Summary of the invention
The object of the present invention is to provide a kind of method for making of photomodulator PN junction, two masks need be used with the method for making solving existing photomodulator PN junction, cause exposure technology cost high, and there is alignment error when exposing in two-layer mask, thus affect the problem of device.
For solving the problem, the present invention proposes a kind of method for making of photomodulator PN junction, and the method comprises the steps:
One substrate is provided;
Described substrate exposed and etches, forming target light waveguide and modulator figure;
Light dope N is carried out to the described substrate through over etching
-ion implantation; And
Utilize the second mask to described through light dope N
-substrate after ion implantation carries out P
-ion implantation.
Optionally, described substrate is SOI substrate silicon chip.
Optionally, the described SOI substrate silicon chip silicon fiml that comprises silicon substrate, be positioned at the buried oxide on described silicon substrate and be positioned in described buried oxide.
Optionally, described buried oxide is silicon dioxide.
Optionally, described light dope N
-n in ion implantation
-the concentration of ion is 10
12/ cm
2~ 10
13/ cm
2.
Optionally, described doped with P
-p in ion implantation
-the concentration of ion is described N
-one to ten times of the concentration of ion.
Compared with prior art, the method for making of photomodulator PN junction provided by the invention first carries out N to the whole substrate surface after etching
-ion implantation, and then use the surface of mask to described substrate after etching to carry out P
-ion implantation, owing to only need use a mask in manufacturing process, has thus saved the cost of manufacture of photomodulator PN junction, and alignment error when avoiding the exposure of two-layer mask existence.
Accompanying drawing explanation
Fig. 1 is the making step process flow diagram of existing photomodulator PN junction;
Fig. 2 is substrat structure schematic diagram;
Fig. 3 is the structural representation of the substrate after etching;
Fig. 4 is existing N
-the schematic diagram of ion implantation;
Fig. 5 is existing P
-the schematic diagram of ion implantation;
Fig. 6 is existing through P
-device schematic cross-section after ion implantation;
The making step process flow diagram of the photomodulator PN junction that Fig. 7 provides for the embodiment of the present invention;
Fig. 8 is substrat structure schematic diagram;
Fig. 9 is the structural representation of the substrate after etching;
The N that Figure 10 provides for the embodiment of the present invention
-the schematic diagram of ion implantation;
The P that Figure 11 provides for the embodiment of the present invention
-the schematic diagram of ion implantation;
Figure 12 for the embodiment of the present invention provide through P
-device schematic cross-section after ion implantation.
Embodiment
Be described in further detail below in conjunction with the method for making of the drawings and specific embodiments to the photomodulator PN junction that the present invention proposes.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, provides a kind of method for making of photomodulator PN junction, and the method first carries out N to the whole substrate surface after etching
-ion implantation, and then use the surface of mask to described substrate after etching to carry out P
-ion implantation, owing to only need use a mask in manufacturing process, has thus saved the cost of manufacture of photomodulator PN junction, and alignment error when avoiding the exposure of two-layer mask existence.
Please refer to Fig. 7, the making step process flow diagram of the photomodulator PN junction that Fig. 7 provides for the embodiment of the present invention, as shown in Figure 7, the method for making of this photomodulator PN junction comprises the steps:
One substrate is provided, please refer to Fig. 8, Fig. 8 is substrat structure schematic diagram, wherein this substrate 100 is SOI substrate silicon chip, the silicon fiml 103 comprising silicon substrate 101, be positioned at the buried oxide (BOX:BuriedOxide Layer) 102 on described silicon substrate 101 and be positioned in described buried oxide 102;
Described substrate is exposed and etches, form target light waveguide and modulator figure, please refer to Fig. 9, Fig. 9 is the structural representation of the substrate after etching, and as shown in Figure 9, the two ends of silicon fiml 103 are etched away, expose buried oxide 102, the silicon fiml 103 do not etched away forms the low ledge structure in middle high two ends, and this is to make incident light more concentrated, makes it propagate in silicon fiml 103 better;
N is carried out to the described substrate through over etching
-ion implantation, please refer to Figure 10, the N that Figure 10 provides for the embodiment of the present invention
-the schematic diagram of ion implantation, as shown in Figure 10, the N that the embodiment of the present invention provides
-ion implantation is carried out the whole region of described silicon fiml 103 after over etching, wherein, and N
-the concentration of ion is 10
12/ cm
2~ 10
13/ cm
2;
Utilize the second mask to described through N
-the substrate of ion implantation carries out P
-ion implantation, please refer to Figure 11, and Figure 11 is existing P
-the schematic diagram of ion implantation, as shown in figure 11, through N
-after ion implantation, the whole region of described silicon fiml 103 after over etching forms N
-doped region 104, to described through N
-the substrate of ion implantation carries out P
-the photoresistance 202 stayed after have employed one second mask exposure during ion implantation, thus make the half region of described silicon fiml 103 after over etching to carry out P
-doping, wherein, described doped with P
-p in ion implantation
-the concentration of ion is described N
-one to ten times of the concentration of ion.
Please continue to refer to Figure 12, Figure 12 for the embodiment of the present invention provide through P
-device schematic cross-section after ion implantation, as shown in figure 12, through P
-after ion implantation, the half region of described silicon fiml 103 after over etching forms N
-doped region 104, second half region forms P
-doped region 105, thus form photomodulator PN junction.
Further, described buried oxide is silicon dioxide.
In one particular embodiment of the present invention, mask is not first used to carry out N to whole substrate surface after etching
-ion implantation, and then use a mask to carry out P to the substrate surface after etching
-ion implantation, but should be realized that, according to actual conditions, P can also be carried out for first not using mask to whole substrate surface after etching
-ion implantation, and then use a mask to carry out N to the substrate surface after etching
-ion implantation.
And, it should be noted that, the present invention is to provide a kind of method for making of photomodulator PN junction, in the process of actual fabrication photomodulator, also may can use other processing steps except photomodulator PN junction, such as low resistance contacts district N
+/ P
+the processing steps such as injection, interlayer dielectric layer, contact hole, metal silicide, the manufacture craft of these processing steps and photomodulator PN junction with the use of.
In sum, the invention provides a kind of method for making of photomodulator PN junction, the method first carries out N to the whole substrate surface after etching
-ion implantation, and then use the surface of mask to described substrate after etching to carry out P
-ion implantation, owing to only need use a mask in manufacturing process, has thus saved the cost of manufacture of PN junction, and alignment error when avoiding the exposure of two-layer mask existence.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (6)
1. a method for making for photomodulator PN junction, is characterized in that, comprises the steps:
One substrate is provided;
Described substrate exposed and etches, forming target light waveguide and modulator figure;
Light dope N is carried out to the described substrate through over etching
-ion implantation; And
Utilize the second mask to described through light dope N
-substrate after ion implantation carries out P
-ion implantation.
2. the method for making of photomodulator PN junction as claimed in claim 1, it is characterized in that, described substrate is SOI substrate silicon chip.
3. the method for making of photomodulator PN junction as claimed in claim 2, is characterized in that, the silicon fiml that described SOI substrate silicon chip comprises silicon substrate, is positioned at the buried oxide on described silicon substrate and is positioned in described buried oxide.
4. the method for making of photomodulator PN junction as claimed in claim 3, it is characterized in that, described buried oxide is silicon dioxide.
5. the method for making of photomodulator PN junction as claimed in claim 1, is characterized in that, described light dope N
-n in ion implantation
-the concentration of ion is 10
12/ cm
2~ 10
13/ cm
2.
6. the method for making of photomodulator PN junction as claimed in claim 5, is characterized in that, described doped with P
-p in ion implantation
-the concentration of ion is about described N
-one to ten times of the concentration of ion.
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| CN101907785A CN101907785A (en) | 2010-12-08 |
| CN101907785B true CN101907785B (en) | 2015-09-16 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6298177B1 (en) * | 1999-03-25 | 2001-10-02 | Bookham Technology Plc | Phase modulator for semiconductor waveguide |
| CN101622570A (en) * | 2007-03-01 | 2010-01-06 | 朗讯科技公司 | High speed semiconductor optical modulator |
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| KR100887058B1 (en) * | 2007-09-06 | 2009-03-04 | 주식회사 하이닉스반도체 | Manufacturing method of phase change memory device and operating method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6298177B1 (en) * | 1999-03-25 | 2001-10-02 | Bookham Technology Plc | Phase modulator for semiconductor waveguide |
| CN101622570A (en) * | 2007-03-01 | 2010-01-06 | 朗讯科技公司 | High speed semiconductor optical modulator |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140514 |
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Effective date of registration: 20140514 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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