CN101907785A - Method for manufacturing photomodulator PN (Positive-Negative) junction - Google Patents
Method for manufacturing photomodulator PN (Positive-Negative) junction Download PDFInfo
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- CN101907785A CN101907785A CN2010101985093A CN201010198509A CN101907785A CN 101907785 A CN101907785 A CN 101907785A CN 2010101985093 A CN2010101985093 A CN 2010101985093A CN 201010198509 A CN201010198509 A CN 201010198509A CN 101907785 A CN101907785 A CN 101907785A
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- photomodulator
- substrate
- junction
- ion
- ion injects
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Abstract
The invention discloses a method for manufacturing a photomodulator PN (Positive-Negative) junction. The method comprises the following steps of: providing a substrate; exposing and etching the substrate to form a target optical waveguide and a modulator graph; carrying out light dope N-ion injection on the etched substrate; and carrying out light dope P-ion injection on the substrate subjected to the light dope N-ion injection by utilizing a second mask. Because only one mask needs to be used in the manufacture process, the manufacture cost for the PN junction in a photomodulator is saved, and alignment errors of the two masks during exposing are avoided.
Description
Technical field
The present invention relates to a kind of continuous incident light is converted to and can relate in particular to a kind of method for making of photomodulator PN junction by the photomodulator of discrete light signal of electric signal control.
Background technology
Photomodulator also claims electrooptic modulator, is the Primary Component of high speed, long-distance optical communication, also is one of most important integrated optical device.It is the device by refractive index, absorptivity, amplitude or the phase place of the variation final regulation and control output light of voltage or electric field.The basic theories of its institute's foundation is various multi-form electrooptical effects, acoustooptic effect, magneto-optic effect, charge carrier effect of dispersion etc.In the light emission of whole optical communication, transmission, receiving course, photomodulator is used to control light intensity, and its effect is very important.
Mach-Zehnder Mach-Zehender (M-Z) type photomodulator is that input light is divided into two light branch roads that the equal signal of two-way enters modulator respectively, the material that these two light branch roads adopt is the electric light material, and its refractive index changes with the electric signal size that the outside applies.Because the variations in refractive index of light branch road can cause the variation of signal phase, when two tributary signal modulator output terminals combine once more, synthetic light signal will be the interference signal of an intensity size variation, be equivalent to the variation of electric signal has been converted to the variation of light signal, realized the modulation of light signal.
In the last few years, because lithium niobate (LiNbO
3) characteristic such as low-loss of waveguide, high electrical efficiency, lithium niobate obtains use more and more widely in the photomodulator of 2.5Gb/s and higher rate.LiNbO based on Mach-Zehnder (M-Z) waveguiding structure
3Travelling-wave modulator has become most popular modulator in the existing system.
And, in order further to improve the speed of M-Z type photomodulator, reduce its power consumption simultaneously, proposed at present M-Z type photomodulator is adopted Silicon-On-Insulator (SOI:Silicon On Insulator) technology, be about to M-Z type photomodulator and be produced on the Silicon-On-Insulator substrate.Wherein, diode is being brought into play important effect in the SOI M-Z type photomodulator.Compare with general-purpose diode, structurally different is, the PN junction in the photomodulator is produced on the optical waveguide of different shape usually, and light need pass the side of this PN junction, and therefore, the junction depth of PN junction is very shallow, is generally less than 1 micron.
Please refer to Fig. 1, Fig. 1 is the making step process flow diagram of existing photomodulator PN junction, and as shown in Figure 1, the making of existing photomodulator PN junction comprises the steps:
One substrate is provided, please refer to Fig. 2, Fig. 2 is the substrat structure synoptic diagram, and wherein this substrate 100 is the SOI silicon substrate, comprises silicon substrate 101, is positioned at the buried oxide (BOX:BuriedOxide Layer) 102 on the described silicon substrate 101 and is positioned at silicon fiml 103 on the described buried oxide 102;
Described substrate is exposed and etching, form target light waveguide and modulator figure, please refer to Fig. 3, Fig. 3 is the structural representation of the substrate after the etching, and as shown in Figure 3, the two ends of silicon fiml 103 are etched away, expose buried oxide 102, the low ledge structure in high two ends in the middle of the silicon fiml 103 that does not etch away forms, this is in order to make the light of incident more concentrated, it to be propagated in silicon fiml 103 better;
Utilize first mask that described substrate through over etching is carried out light dope N
-Ion injects, and please refer to Fig. 4, and Fig. 4 is existing N
-The synoptic diagram that ion injects as shown in Figure 4, is carrying out N to described substrate through over etching
-Ion has adopted first mask 201 when injecting, thereby makes half zone of described silicon fiml 103 behind over etching can carry out N
-Mix, wherein, described N
-The concentration of ion is 10
12/ cm
2～10
13/ cm
2
Utilize second mask to described process light dope N
-The substrate that ion injects carries out doped with P
-Ion injects, and please refer to Fig. 5, and Fig. 5 is an existing P
-The synoptic diagram that ion injects, as shown in Figure 5, through N
-After ion injected, half zone of described silicon fiml 103 behind over etching had formed N
- Doped region 104, to described through N
-The substrate that ion injects carries out P
-Ion has adopted second mask 202 when injecting, thereby makes second half zone of described silicon fiml 103 behind over etching can carry out P
-Mix, wherein, described P
-The concentration of ion is described N
-One to ten times of the concentration of ion.Please continue with reference to figure 6, Fig. 6 is existing through P
-Device schematic cross-section after ion injects, as shown in Figure 6, through P
-After ion injected, half zone of described silicon fiml 103 behind over etching formed N
- Doped region 104, second half zone forms P
- Doped region 105, thus the photomodulator PN junction formed.
Yet the method for making of existing photomodulator PN junction needs two masks, because the cost costliness of mask, therefore the cost of manufacture of existing photomodulator PN junction is higher, and has N
-And P
-Alignment error during two-layer mask exposure may cause fabrication error, thereby device performance is had certain influence.
Summary of the invention
The object of the present invention is to provide a kind of method for making of photomodulator PN junction, need use two masks with the method for making that solves existing photomodulator PN junction, cause exposure technology cost height, and the time there is alignment error in two-layer mask in exposure, thereby influences the problem of device.
For addressing the above problem, the present invention proposes a kind of method for making of photomodulator PN junction, and this method comprises the steps:
One substrate is provided;
Described substrate is exposed and etching, form target light waveguide and modulator figure;
Described substrate through over etching is carried out light dope N
-Ion injects; And
Utilize second mask to described process light dope N
-Substrate after ion injects carries out P
-Ion injects.
Optionally, described substrate is the SOI silicon substrate.
Optionally, described SOI silicon substrate comprises silicon substrate, is positioned at the buried oxide on the described silicon substrate and is positioned at silicon fiml on the described buried oxide.
Optionally, described buried oxide is a silicon dioxide.
Optionally, described light dope N
-The N that ion injects
-The concentration of ion is 10
12/ cm
2～10
13/ cm
2
Optionally, described doped with P
-The P that ion injects
-The concentration of ion is described N
-One to ten times of the concentration of ion.
Compared with prior art, the method for making of photomodulator PN junction provided by the invention is carried out N to the entire substrate surface after etching earlier
-Ion injects, and then uses mask that P is carried out on the surface of described substrate after etching
-Ion injects, owing in manufacturing process, only need to use a mask, thereby the cost of manufacture of having saved the photomodulator PN junction, and the alignment error when having avoided exposure that two-layer mask exists.
Description of drawings
Fig. 1 is the making step process flow diagram of existing photomodulator PN junction;
Fig. 2 is the substrat structure synoptic diagram;
Fig. 3 is the structural representation of the substrate after the etching;
Fig. 4 is existing N
-The synoptic diagram that ion injects;
Fig. 5 is an existing P
-The synoptic diagram that ion injects;
Fig. 6 is existing through P
-Device schematic cross-section after ion injects;
The making step process flow diagram of the photomodulator PN junction that Fig. 7 provides for the embodiment of the invention;
Fig. 8 is the substrat structure synoptic diagram;
Fig. 9 is the structural representation of the substrate after the etching;
The N that Figure 10 provides for the embodiment of the invention
-The synoptic diagram that ion injects;
The P that Figure 11 provides for the embodiment of the invention
-The synoptic diagram that ion injects;
The process P that Figure 12 provides for the embodiment of the invention
-Device schematic cross-section after ion injects.
Embodiment
Be described in further detail below in conjunction with the method for making of the drawings and specific embodiments the photomodulator PN junction of the present invention's proposition.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is, a kind of method for making of photomodulator PN junction is provided, and this method is carried out N to the entire substrate surface after etching earlier
-Ion injects, and then uses mask that P is carried out on the surface of described substrate after etching
-Ion injects, owing in manufacturing process, only need to use a mask, thereby the cost of manufacture of having saved the photomodulator PN junction, and the alignment error when having avoided exposure that two-layer mask exists.
Please refer to Fig. 7, the making step process flow diagram of the photomodulator PN junction that Fig. 7 provides for the embodiment of the invention, as shown in Figure 7, the method for making of this photomodulator PN junction comprises the steps:
One substrate is provided, please refer to Fig. 8, Fig. 8 is the substrat structure synoptic diagram, and wherein this substrate 100 is the SOI silicon substrate, comprises silicon substrate 101, is positioned at the buried oxide (BOX:BuriedOxide Layer) 102 on the described silicon substrate 101 and is positioned at silicon fiml 103 on the described buried oxide 102;
Described substrate is exposed and etching, form target light waveguide and modulator figure, please refer to Fig. 9, Fig. 9 is the structural representation of the substrate after the etching, and as shown in Figure 9, the two ends of silicon fiml 103 are etched away, expose buried oxide 102, the low ledge structure in high two ends in the middle of the silicon fiml 103 that does not etch away forms, this is in order to make the light of incident more concentrated, it to be propagated in silicon fiml 103 better;
Described substrate through over etching is carried out N
-Ion injects, and please refer to Figure 10, the N that Figure 10 provides for the embodiment of the invention
-The synoptic diagram that ion injects, as shown in figure 10, the N that the embodiment of the invention provides
-The ion injection is that the whole zone of described silicon fiml 103 behind over etching is carried out, wherein, and N
-The concentration of ion is 10
12/ cm
2～10
13/ cm
2
Utilize second mask to described process N
-The substrate that ion injects carries out P
-Ion injects, and please refer to Figure 11, and Figure 11 is an existing P
-The synoptic diagram that ion injects, as shown in figure 11, through N
-After ion injected, the whole zone of described silicon fiml 103 behind over etching had formed N
- Doped region 104, to described through N
-The substrate that ion injects carries out P
-Ion has adopted the photoresistance 202 that stays behind one second mask exposure when injecting, thereby makes half zone of described silicon fiml 103 behind over etching can carry out P
-Mix, wherein, described doped with P
-The P that ion injects
-The concentration of ion is described N
-One to ten times of the concentration of ion.
Please continue with reference to Figure 12 the process P that Figure 12 provides for the embodiment of the invention
-Device schematic cross-section after ion injects, as shown in figure 12, through P
-After ion injected, half zone of described silicon fiml 103 behind over etching formed N
- Doped region 104, second half zone forms P
- Doped region 105, thus the photomodulator PN junction formed.
Further, described buried oxide is a silicon dioxide.
In a specific embodiment of the present invention, do not use mask that whole substrate surface after etching is carried out N earlier
-Ion injects, and then uses a mask that the substrate surface after etching is carried out P
-Ion injects, yet should be realized that, according to actual conditions, and can also be for not using mask that whole substrate surface after etching is carried out P earlier
-Ion injects, and then uses a mask that the substrate surface after etching is carried out N
-Ion injects.
And, it should be noted that, the present invention is to provide a kind of method for making of photomodulator PN junction, in the process of actual fabrication photomodulator, may also can use other processing steps except that the photomodulator PN junction, for example low-resistance contact region N
+/ P
+Processing steps such as injection, interlayer dielectric layer, contact hole, metal silicide, the manufacture craft of these processing steps and photomodulator PN junction is used.
In sum, the invention provides a kind of method for making of photomodulator PN junction, this method is carried out N to the entire substrate surface after etching earlier
-Ion injects, and then uses mask that P is carried out on the surface of described substrate after etching
-Ion injects, owing in manufacturing process, only need to use a mask, thereby the cost of manufacture of having saved PN junction, and the alignment error when having avoided exposure that two-layer mask exists.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (6)
1. the method for making of a photomodulator PN junction is characterized in that, comprises the steps:
One substrate is provided;
Described substrate is exposed and etching, form target light waveguide and modulator figure;
Described substrate through over etching is carried out light dope N
-Ion injects; And
Utilize second mask to described process light dope N
-Substrate after ion injects carries out P
-Ion injects.
2. the method for making of photomodulator PN junction as claimed in claim 1 is characterized in that, described substrate is the SOI silicon substrate.
3. the method for making of photomodulator PN junction as claimed in claim 2 is characterized in that, described SOI silicon substrate comprises silicon substrate, be positioned at the buried oxide on the described silicon substrate and be positioned at silicon fiml on the described buried oxide.
4. the method for making of photomodulator PN junction as claimed in claim 3 is characterized in that, described buried oxide is a silicon dioxide.
5. the method for making of photomodulator PN junction as claimed in claim 1 is characterized in that, described light dope N
-The N that ion injects
-The concentration of ion is 10
12/ cm
2～10
13/ cm
2
6. the method for making of photomodulator PN junction as claimed in claim 5 is characterized in that, described doped with P
-The P that ion injects
-The concentration of ion is about described N
-One to ten times of the concentration of ion.
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|---|---|---|---|
| CN201010198509.3A CN101907785B (en) | 2010-06-11 | 2010-06-11 | A kind of method for making of photomodulator PN junction |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010198509.3A CN101907785B (en) | 2010-06-11 | 2010-06-11 | A kind of method for making of photomodulator PN junction |
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| Publication Number | Publication Date |
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| CN101907785B CN101907785B (en) | 2015-09-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105207057A (en) * | 2015-10-29 | 2015-12-30 | 中国科学院半导体研究所 | Monolithically integrated external cavity oscillation laser with rapid tunable wavelength |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6298177B1 (en) * | 1999-03-25 | 2001-10-02 | Bookham Technology Plc | Phase modulator for semiconductor waveguide |
| US20090067228A1 (en) * | 2007-09-06 | 2009-03-12 | Hee Bok Kang | Phase change memory device, manufacturing method thereof and operating method thereof |
| CN101622570A (en) * | 2007-03-01 | 2010-01-06 | 朗讯科技公司 | High speed semiconductor optical modulator |
-
2010
- 2010-06-11 CN CN201010198509.3A patent/CN101907785B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6298177B1 (en) * | 1999-03-25 | 2001-10-02 | Bookham Technology Plc | Phase modulator for semiconductor waveguide |
| CN101622570A (en) * | 2007-03-01 | 2010-01-06 | 朗讯科技公司 | High speed semiconductor optical modulator |
| US20090067228A1 (en) * | 2007-09-06 | 2009-03-12 | Hee Bok Kang | Phase change memory device, manufacturing method thereof and operating method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105207057A (en) * | 2015-10-29 | 2015-12-30 | 中国科学院半导体研究所 | Monolithically integrated external cavity oscillation laser with rapid tunable wavelength |
| CN105207057B (en) * | 2015-10-29 | 2018-01-23 | 中国科学院半导体研究所 | The single-chip integration exocoel oscillating laser that wavelength quickly tunes |
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| Publication number | Publication date |
|---|---|
| CN101907785B (en) | 2015-09-16 |
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