CN101135749A - Double electric capacity metal oxide semiconductor silicon based high speed high modulate efficiency electro optic modulator - Google Patents
Double electric capacity metal oxide semiconductor silicon based high speed high modulate efficiency electro optic modulator Download PDFInfo
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- CN101135749A CN101135749A CNA2006101127024A CN200610112702A CN101135749A CN 101135749 A CN101135749 A CN 101135749A CN A2006101127024 A CNA2006101127024 A CN A2006101127024A CN 200610112702 A CN200610112702 A CN 200610112702A CN 101135749 A CN101135749 A CN 101135749A
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Abstract
The invention comprises: a substrate; a silica buried layer formed on the substrate; a p type monocrystalline silicon layer is uses as the monocrystalline silicon on the substrate; forming a grid oxide layer on both sides of the p type monocrystalline silicon layer; a p+ injection layer is formed on the p type monocrystalline silicon layer; a n type monocrystalline silicon layer is formed on the silica buried layer and the both sides of the grid oxide layer, and said n type monocrystalline silicon layer and p type monocrystalline silicon layer are combined together to form a ridge waveguide structure; a n+ injection layer formed on the planes at both sides of the n type monocrystalline silicon ridge waveguide structure; a metal contact layer is formed on middle portion of the p+ injection layer in order to form the positive and negative electrode of the modulator; a oxide layer formed on the surfaces of the n type monocrystalline silicon layer and p type monocrystalline silicon as a protective layer.
Description
Technical field
The present invention relates to a kind of electrooptic modulator, two capacity metal oxide semiconductors (MOS) silicon based high speed high modulate efficiency electrooptic modulator of particularly a kind of and modern lsi technology compatibility.
Background technology
The speed that the integrated level of integrated circuit is every two years doubled according to the Moore's Law development that shoots ahead, transistor size and interconnection line size are dwindled synchronously and are made chip integration more and more higher, and expense is more and more lower.Though along with the raising of integrated level, the time-delay of single transistor is more and more littler, yet the time-delay of interconnection line is increasing.This be because the interconnection line size reduce interconnection line resistance is increased, though adopt copper-connection to replace the electromobility problem of in the past aluminium interconnection can reducing to a certain extent resistance and interconnection line at present, yet when the interconnection line size further reduced, copper-connection had still run into the bottleneck of time-delay and power consumption.In addition, along with reducing of copper interconnecting line size, thereby surface scattering more and more seriously further increases interconnection line resistance.When interconnection line width during less than 50nm, the influence of this surface scattering highly significant that will become, and depend critically upon the metal deposition technology.The intrinsic problems such as resistance, time-delay, power loss and electromagnetic interference (EMI) of these electrical interconnections become the bottleneck of restriction microelectronic integrated circuit development, make people turn to the light interconnection to sight.Light interconnection can solve the intrinsic bottleneck of electrical interconnection, has advantages such as high bandwidth, anti-interference and low-power consumption, can be used for clock signal transmission in the System on Chip/SoC, solves the phase mutual interference and the clock skew problem of signal.
In order to realize that the light interconnection must be modulated into light signal with electric signal by means of modulator.The LiNbO3 the same with other optoelectronic devices, that present modulator material therefor all is based on the III-V group iii v compound semiconductor material and has strong linear electro-optic coefficient.Why the less consideration of people is because silicon is that inverting assymetric crystal structure does not possess linear electro-optic effect as modulator material with silicon, is difficult to realize the high speed electro-optical modulation.Traditional PIN waveguide type electrooptic modulator speed based on plasma dispersion effect is the highest also has only 20MHz.2004, silica-based MOS (Metal-Oxide-Semiconductor) the type capacitor arrangement modulator of reporting on " Nature " magazine was brought up to 1GHz with modulation rate.Though this MOS type capacitor arrangement modulator has improved speed greatly, but the carrier accumulation zone of this structure only concentrates in the thin layer of gate oxide both sides, charge carrier and light field overlapping area are little, therefore charge carrier causes that change of refractive is less, modulation efficiency is low, needs very long modulation length just can reach the π phase shift.Low modulation efficiency also causes the increase of power consumption, needs bigger injection current.Be operated in the rising that silica-based modulator under the big electric current can cause device temperature, the rising meeting of temperature is because thermo-optic effect causes the increase of silicon refractive index, offset reducing of refractive index that plasma dispersion effect causes, thereby may make component failure.Therefore be necessary this structure modulator is improved, realize the high-level efficiency modulation under the High Speed Modulation simultaneously satisfying.
Summary of the invention
The objective of the invention is to, a kind of two vertically gate oxide structure MOS modulator is provided, improve the modulation efficiency of MOS modulator, reduce modulation length and power consumption.This two vertically gate oxide structure MOS modulator is made on the SOI substrate, its manufacture craft with in modern lsi technology compatibility, be easy to realize that photoelectron is integrated.
A kind of pair of capacity MOS silicon based high speed high modulate efficiency electrooptic modulator of the present invention is characterized in that, comprising:
One substrate;
One silica buried layer, this silica buried layer is positioned on the substrate;
One p type monocrystalline silicon layer, this p type monocrystalline silicon layer are the monocrystalline silicon on the substrate, form gate oxide in the both sides of p type monocrystalline silicon layer;
One p+ input horizon, this p+ input horizon be produced on p type monocrystalline silicon layer above;
One n type monocrystalline silicon layer, this n type monocrystalline silicon layer are produced on the both sides that reach the gate oxide of p type monocrystalline surface on the silica buried layer, and this n type monocrystalline silicon layer and p type monocrystalline silicon layer form ridged waveguide structure together;
One n+ input horizon, this n+ input horizon are produced on the plane of n type monocrystalline silicon layer ridged waveguide structure both sides;
One metal contact layer, this metal contact layer are produced on centre position and the centre position above the n+ input horizon above the p+ input horizon, form the positive and negative electrode of modulator respectively;
One oxide layer, this oxide layer are produced on the surface of n type monocrystalline silicon layer and p type monocrystalline silicon layer, play a protective role.
Wherein the thickness of gate oxide is 10nm, and thin more gate oxide thickness helps the raising of modulation efficiency more.
Wherein gate oxide is clipped between n type monocrystalline silicon layer and the p type monocrystalline silicon layer, plays the effect with n type monocrystalline silicon layer and the insulation of p type monocrystalline silicon layer, forms capacitance structure.
Wherein gate oxide is positioned at the both sides of p type monocrystalline silicon layer, and the capacitance structure that forms between n type monocrystalline silicon layer and p type monocrystalline silicon layer is equivalent to the parallel connection of two electric capacity.
Wherein the injection degree of depth of p+ input horizon is less than 0.5 μ m, and reducing the absorption loss of heavy doping Ohmic contact to light field, the thickness of p+ input horizon is thin more to help reducing absorption loss more.
Wherein the injection degree of depth of n+ input horizon is less than 0.5 μ m, and reducing the absorption loss of heavy doping Ohmic contact to light field, the thickness of n+ input horizon is thin more to help reducing absorption loss more.
Wherein use the SOI substrate to make device, the silica buried layer that uses SOI plays the effect of restriction light field, thereby light field is limited in the ridge waveguide zone, reduces the leakage losses of light field to substrate.
Description of drawings
For further specifying concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 represents section of structure of the present invention;
Fig. 2 represents incident field distribution plan in modulator;
Fig. 3 (a) and Fig. 3 (b) expression difference add under the forward bias charge carrier distribution plan in the modulator;
Fig. 4 represents under the different modulation length, the phase change figure that different forward biases causes.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described.
See also Fig. 1, Fig. 1 represents two vertically section of structures of gate oxide structure MOS modulator, and a kind of pair of capacity MOS silicon based high speed high modulate efficiency electrooptic modulator of the present invention comprises:
One substrate 10;
One silica buried layer 11, this silica buried layer 11 is positioned on the substrate 10;
One p type monocrystalline silicon layer 18, this p type monocrystalline silicon layer 18 are the monocrystalline silicon on the substrate, form gate oxide 17 in the both sides of p type monocrystalline silicon layer 18;
One p+ input horizon 16, this p+ input horizon 16 be produced on p type monocrystalline silicon layer 18 above;
One n type monocrystalline silicon layer 12, this n type monocrystalline silicon layer 12 are produced on the both sides that reach the gate oxide 17 on p type monocrystalline silicon layer 18 surfaces on the silica buried layer 11, and this n type monocrystalline silicon layer 12 and p type monocrystalline silicon layer 18 form ridged waveguide structure together;
One n+ input horizon 13, this n+ input horizon 13 are produced on the plane of n type monocrystalline silicon layer 12 protruding both sides;
One metal contact layer 14, this metal contact layer 14 are produced on centre position and the centre position above the n+ input horizon 13 above the p+ input horizon 16, form the positive and negative electrode of modulator respectively;
One oxide layer 15, this oxide layer 15 is produced on the surface of n type monocrystalline silicon layer 12 and p type monocrystalline silicon layer 18, plays a protective role;
Wherein p type monocrystalline silicon layer 18 is the p-Si on the SOI substrate, stays the column p type monocrystalline silicon part that needs by Si unnecessary on the SOI substrate is etched away.Gate oxide 17 is for forming by the dried oxide growth of high temperature on p type monocrystalline silicon layer 18.N type monocrystalline silicon layer 12 is for passing through with after the p-Si etching on the SOI substrate epitaxial growth formation on silica buried layer 11.Why growing single-crystal silicon is in order to reduce it to light field absorption loss, to consider that the complicacy of growing single-crystal silicon technology also can make polysilicon more or less freely on the growth technique into, but cost is a polysilicon absorption of light field is caused bigger absorption loss more greatly.The making of electrode can obtain by the Ohmic contact of routine, it should be noted that, for the heavy doping Ohmic contact that reduces electrode to the absorption of light field to reduce loss, the heavy doping input horizon thickness of Ohmic contact should be less, that is: p+ input horizon 16 and n+ input horizon 13 inject the degree of depth should be less than 0.5 μ m.The thickness of input horizon is thin more to help reducing absorption loss more, may increase but cost is the resistance of Ohmic contact.Grow layer of oxide layer 15 as protective seam in modulator surface at last.
Be clipped in gate oxide 17 between n type monocrystalline silicon layer 12 and the p type monocrystalline silicon layer 18 and served as the dielectric insulation layer of capacitor, so this structure can be equivalent to the parallel connection of two capacitors.When on electrode, adding forward bias, the same with ordinary capacitor, at dielectric insulation layer---it is tired that many subproducts can appear in gate oxide 17 both sides.The charge carrier of accumulation has reduced the refractive index of ridge waveguide by plasma dispersion effect, thereby has changed the incident field phase place.Suitable selection forward bias value and modulation length make phase change π.The two-beam of phase place phase difference of pi interferes when passing through Mach-Zehnder type Y branch interferometer, thereby forms the modulation of light intensity.
Fig. 2 represents incident field distribution plan in modulator, and most of as seen from the figure light field is limited in the ridge waveguide zone, and light field amplitude maximum is arranged in p type monocrystalline silicon layer 18.This is the same with common ridge waveguide to the restriction of light field, and reason is the very thin thickness of gate oxide 17, can ignore the influence of light field.Fig. 3 is illustrated in and adds under the forward bias, charge carrier distribution plan in the modulator.Fig. 3 (a) is under zero-bias, in the charge carrier distribution of y=3 μ m section, because the effect of mos capacitance device flat-band voltage is less in gate oxide 17 both sides carrier concentrations.When adding the 5V forward bias, can carrier accumulation appear in gate oxide 17 both sides, shown in Fig. 3 (b).
This shows: under applying bias, gate oxide 17 both sides all are not only to have distributed than the light field of large amplitude but also to exist many subproducts tired.The area that its charge carrier and light field overlap is equivalent to the surface area of two capacitors, is far longer than the surface area of an electric capacity of single capacitor MOS modulator of reporting on " Nature " magazine, has therefore improved modulation efficiency greatly.
Fig. 4 represents under the different modulation length, the phase change figure that different forward biases causes.Under the 10V forward bias, modulation length is that 4mm just is enough to realize the π phase shift as seen from the figure.Being significantly smaller than modulation length is the single capacitor type MOS modulator of 10mm.
The present invention proposes a kind of two vertically gate oxide structure MOS modulator, can significantly improve the modulation efficiency of common single capacitor type MOS modulator, reduce modulation length and power consumption.This two vertically gate oxide structure MOS modulator is made on the SOI substrate, its manufacture craft with in modern lsi technology compatibility, be easy to realize that photoelectron is integrated.Two vertically gate oxide structure MOS type silicon-based electro-optical modulators that the present invention proposes with the superperformance of its high speed high modulate efficiency, are expected to produce material impact in optoelectronic integrated circuit of future generation (OEIC) and the interconnection of sheet glazing.
Claims (7)
1. a two capacity MOS silicon based high speed high modulate efficiency electrooptic modulator is characterized in that, comprising:
One substrate;
One silica buried layer, this silica buried layer is positioned on the substrate;
One p type monocrystalline silicon layer, this p type monocrystalline silicon layer are the monocrystalline silicon on the substrate, form gate oxide in the both sides of p type monocrystalline silicon layer;
One p+ input horizon, this p+ input horizon be produced on p type monocrystalline silicon layer above;
One n type monocrystalline silicon layer, this n type monocrystalline silicon layer are produced on the both sides that reach the gate oxide of p type monocrystalline surface on the silica buried layer, and this n type monocrystalline silicon layer and p type monocrystalline silicon layer form ridged waveguide structure together;
One n+ input horizon, this n+ input horizon are produced on the plane of n type monocrystalline silicon layer ridged waveguide structure both sides;
Metal contact layer, this metal contact layer are produced on centre position and the centre position above the n+ input horizon above the p+ input horizon, form the positive and negative electrode of modulator respectively;
One oxide layer, this oxide layer are produced on the surface of n type monocrystalline silicon layer and p type monocrystalline silicon layer, play a protective role.
2. according to claim 1 pair of capacity MOS silicon based high speed high modulate efficiency electrooptic modulator is characterized in that wherein the thickness of gate oxide is 10nm, and thin more gate oxide thickness helps the raising of modulation efficiency more.
3. according to claim 1 pair of capacity MOS silicon based high speed high modulate efficiency electrooptic modulator, it is characterized in that, wherein gate oxide is clipped between n type monocrystalline silicon layer and the p type monocrystalline silicon layer, plays the effect with n type monocrystalline silicon layer and the insulation of p type monocrystalline silicon layer, forms capacitance structure.
4. according to claim 1 pair of capacity MOS silicon based high speed high modulate efficiency electrooptic modulator, it is characterized in that, wherein gate oxide is positioned at the both sides of p type monocrystalline silicon layer, and the capacitance structure that forms between n type monocrystalline silicon layer and p type monocrystalline silicon layer is equivalent to the parallel connection of two electric capacity.
5. according to claim 1 pair of capacity MOS silicon based high speed high modulate efficiency electrooptic modulator, it is characterized in that, wherein the injection degree of depth of p+ input horizon is less than 0.5 μ m, reducing the absorption loss of heavy doping Ohmic contact to light field, the thickness of p+ input horizon is thin more to help reducing absorption loss more.
6. according to claim 1 pair of capacity MOS silicon based high speed high modulate efficiency electrooptic modulator, it is characterized in that, wherein the injection degree of depth of n+ input horizon is less than 0.5 μ m, reducing the absorption loss of heavy doping Ohmic contact to light field, the thickness of n+ input horizon is thin more to help reducing absorption loss more.
7. according to claim 1 pair of capacity MOS silicon based high speed high modulate efficiency electrooptic modulator, it is characterized in that, wherein use the SOI substrate to make device, the silica buried layer that uses SOI plays the effect of restriction light field, thereby light field is limited in the ridge waveguide zone, reduces the leakage losses of light field to substrate.
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Cited By (7)
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| CN102280451A (en) * | 2010-06-13 | 2011-12-14 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof |
| CN103207464A (en) * | 2012-01-17 | 2013-07-17 | 上海硅通半导体技术有限公司 | Electro-optical switch or optical attenuator |
| CN105122106A (en) * | 2013-04-04 | 2015-12-02 | 加州理工学院 | Nanoscale plasmonic field-effect modulator |
| CN106291990A (en) * | 2016-08-29 | 2017-01-04 | 上海交通大学 | Silica-based note oxygen capacitor type electrooptic modulator |
| CN107290873A (en) * | 2016-04-01 | 2017-10-24 | 源杰科技股份有限公司 | Light modulator |
| CN108538785A (en) * | 2018-03-02 | 2018-09-14 | 上海交通大学 | Non-volatile photoswitch of state based on floating boom charge and discharge and preparation method thereof |
| CN110824729A (en) * | 2014-04-18 | 2020-02-21 | 华为技术有限公司 | MOS capacitive optical modulator with transparent conductive and low refractive index gates |
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| EP2845041A4 (en) | 2012-04-30 | 2016-03-23 | Hewlett Packard Development Co | Hybrid mos optical modulator |
| US10366883B2 (en) | 2014-07-30 | 2019-07-30 | Hewlett Packard Enterprise Development Lp | Hybrid multilayer device |
| US10658177B2 (en) | 2015-09-03 | 2020-05-19 | Hewlett Packard Enterprise Development Lp | Defect-free heterogeneous substrates |
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| IL148716A0 (en) * | 2002-03-14 | 2002-09-12 | Yissum Res Dev Co | Control of optical signals by mos (cosmos) device |
| US7039258B2 (en) * | 2003-08-15 | 2006-05-02 | Luxtera, Inc. | Distributed amplifier optical modulators |
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- 2006-08-30 CN CNB2006101127024A patent/CN100514099C/en not_active Expired - Fee Related
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| CN102280451B (en) * | 2010-06-13 | 2014-03-19 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof |
| CN102280451A (en) * | 2010-06-13 | 2011-12-14 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof |
| CN103207464B (en) * | 2012-01-17 | 2017-09-08 | 上海硅通半导体技术有限公司 | A kind of electrooptical switching or optical attenuator |
| CN103207464A (en) * | 2012-01-17 | 2013-07-17 | 上海硅通半导体技术有限公司 | Electro-optical switch or optical attenuator |
| CN105122106B (en) * | 2013-04-04 | 2019-02-01 | 加州理工学院 | Nanoscale plasmon field-effect modulator |
| US9864109B2 (en) | 2013-04-04 | 2018-01-09 | California Institute Of Technology | Nanoscale plasmonic field-effect modulator |
| CN105122106A (en) * | 2013-04-04 | 2015-12-02 | 加州理工学院 | Nanoscale plasmonic field-effect modulator |
| CN110824729A (en) * | 2014-04-18 | 2020-02-21 | 华为技术有限公司 | MOS capacitive optical modulator with transparent conductive and low refractive index gates |
| CN107290873A (en) * | 2016-04-01 | 2017-10-24 | 源杰科技股份有限公司 | Light modulator |
| CN106291990A (en) * | 2016-08-29 | 2017-01-04 | 上海交通大学 | Silica-based note oxygen capacitor type electrooptic modulator |
| CN106291990B (en) * | 2016-08-29 | 2019-09-03 | 上海交通大学 | Silicon substrate infuses the capacitive electrooptic modulator of oxygen |
| CN108538785A (en) * | 2018-03-02 | 2018-09-14 | 上海交通大学 | Non-volatile photoswitch of state based on floating boom charge and discharge and preparation method thereof |
| CN108538785B (en) * | 2018-03-02 | 2020-09-15 | 上海交通大学 | State nonvolatile optical switch based on floating gate charge and discharge and preparation method thereof |
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| CN100514099C (en) | 2009-07-15 |
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