CN103207464A - Electro-optical switch or optical attenuator - Google Patents
Electro-optical switch or optical attenuator Download PDFInfo
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- CN103207464A CN103207464A CN2012100160374A CN201210016037A CN103207464A CN 103207464 A CN103207464 A CN 103207464A CN 2012100160374 A CN2012100160374 A CN 2012100160374A CN 201210016037 A CN201210016037 A CN 201210016037A CN 103207464 A CN103207464 A CN 103207464A
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Abstract
The invention discloses an electro-optical switch or an optical attenuator, comprising an MZI (Mach-Zehnder Interferometer) structure, wherein the MZI structure consists of a first waveguide arm and a second waveguide arm; each of the first waveguide arm and the second waveguide arm comprises a waveguide capacitor structure; the first waveguide arm is externally connected with a first electric signal source; the second waveguide arm is externally connected with a second electric signal source; under the actions of the external electric signal sources, a great number of carriers are injected into an intrinsic region of ridge waveguide of the first waveguide arm, while no carriers or a small number of carriers are injected into an intrinsic region of ridge waveguide of the second waveguide arm; the connected electric signal sources simultaneously cause temperature change to the two waveguide arms; and the temperature change caused to the second waveguide arm is the same with or infinitely close to the temperature change caused to the first waveguide arm. The electro-optical switch or the optical attenuator disclosed by the invention can decrease the change difference of a refractive index under a heat effect caused by the temperature difference between the two waveguide arms, and improve the component efficiency.
Description
Technical field
The present invention relates to a kind of integrated optoelectronic device, especially a kind of electrooptical switching or optical attenuator.
Background technology
Adopting Mach-Ze Ende interferometer (Mach-Zehnder Interferometer is called for short MZI) structure to constitute optical waveguide switch is a kind of common technology.By to wherein waveguide arm of MZI structure namely first waveguide arm carry out the phase place modulation, make two waveguide arms produce phase differential, thereby realize the function of electrooptical switching or optical attenuation.In United States Patent (USP) 7817881, introduced the concept of waveguide capacitor, in the waveguide core district of this waveguide capacitor, can store free carrier, be used for modulating the refractive index of waveguide material.The phase place modulation of first waveguide arm is based on the free carrier effect of dispersion.First waveguide arm of MZI structure has free carrier to be injected into the passage that light is propagated under the driving of electric signal source, and the refractive index of this channel material is changed, and namely the phase place of the light signal in first waveguide arm changes.
Yet, because electric signal source drives and only is carried on MZI structure first waveguide arm, when having charge carrier to inject in first waveguide arm, its temperature also can rise, and another waveguide arm does not namely load electric signal source on second waveguide arm, therefore has temperature contrast between two waveguide arms.Temperature causes that the variations in refractive index (being thermal effect) of material and the trend that the variations in refractive index (being electrical effect) of material that charge carrier causes is injected in the electric signal source driving down are opposite, this is caused adverse effect based on the electrooptical switching of electrical effect or the work efficiency of optical attenuator, namely the temperature contrast between two waveguide arms makes the refractive index difference between two waveguide arms can't reach desired value, has caused device efficiency low.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of electrooptical switching or optical attenuator are provided, solution is two big problems of waveguide arm working temperature difference of MZI structure in the electrooptical switching of substrate or the optical attenuator with silicon-on-insulator SOI, offset or reduce because of the influence of temperature contrast (being thermal effect) to the refractive index of two waveguide arms, make the variations in refractive index difference of two waveguide arms change and determine by adding in first waveguide arm that electric signal source causes carrier concentration, thereby improve device efficiency.
The present invention is achieved by following technical proposals:
A kind of electrooptical switching or optical attenuator, comprise a MZI structure, described MZI structure comprises two parallel waveguide arms, i.e. first waveguide arm and second waveguide arm, described first waveguide arm and second waveguide arm include a waveguide capacitor arrangement, wherein, external first electric signal source of described first waveguide arm, external second electric signal source of described second waveguide arm; Under the described first electric signal source effect, carrier concentration changes in the waveguide capacitor arrangement of described first waveguide arm; Under the described second electric signal source effect, carrier concentration does not change in the waveguide capacitor arrangement of described second waveguide arm, or this carrier concentration changes less than charge carrier concentration change in the waveguide capacitor arrangement of described first waveguide arm; Under described first electric signal source and the second electric signal source effect, the temperature variation of described first waveguide arm and second waveguide arm is identical or close.
Aforesaid electrooptical switching or optical attenuator, wherein, the waveguide capacitor arrangement on described first waveguide arm and second waveguide arm is with the ridge waveguide structure of semiconductor intrinsic region as the core district; The doping type of the doped region in dull and stereotyped district, the both sides of the ridge waveguide of described first waveguide arm is opposite; The flat board district of the ridge waveguide of described second waveguide arm comprises two or more doped regions, the both sides of the wave guide ridge of the described ridge waveguide of apportion, and the doping type of described doped region can be identical or opposite.In certain embodiments, the doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of described first waveguide arm is opposite, constitute the PIN diode structure, the doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of described second waveguide arm is opposite, constitute the PIN diode structure, the doping content of the doped region of described second waveguide arm is less than the doping content of the doped region of described first waveguide arm.In further embodiments, the doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of described first waveguide arm is opposite, constitute the PIN diode structure, the doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of described second waveguide arm is identical, constitutes NIN or PIP structure.In other embodiments, the flat board district of the ridge waveguide of described second waveguide arm comprises three doped regions, wherein first doped region is positioned at the wave guide ridge of described ridge waveguide near a side of described first waveguide arm, and second doped region and the 3rd doped region are positioned at the wave guide ridge of described ridge waveguide away from a side of described first waveguide arm; Described second doped region is with respect to the side of the 3rd doped region at close described first waveguide arm; The alloy that described first doped region is identical with the substrate semiconductor type of the ridge waveguide of described second waveguide arm with the doping of second doped region, described the 3rd doped region doping alloy opposite with the aforesaid substrate semiconductor type.
Aforesaid electrooptical switching or optical attenuator, wherein, described first waveguide arm and second waveguide arm top are coated with one deck oxide skin(coating), and described oxide layer forms the electrode contact hole by etching, is filled with the metal material as electrode in the described electrode contact hole; Described oxide skin(coating) and described metal material top deposited semiconductor material; By described semiconductor material is mixed, make described semiconductor material inside between positive and negative electrode, form back-biased PN junction, thereby becoming good heat-conducting layer, the semiconductor material on the described oxide layer can between electrode, not introduce electric current.In certain embodiments, described semiconductor material is polysilicon.
Owing to adopt technique scheme, the heat balance method of silica-based electrooptical switching provided by the invention or optical attenuator has such beneficial effect: under identical external electric signal source, the intrinsic region of the ridge waveguide of first waveguide arm of the MZI structure of electrooptical switching or optical attenuator has relatively large charge carrier to inject, and the intrinsic region of the ridge waveguide of second waveguide arm does not have and injects charge carrier or inject than minority carrier, namely with respect to second waveguide arm, the variations in refractive index that causes owing to the carrier concentration variation in first waveguide arm is much remarkable; Simultaneously, external electric signal source causes temperature variation at two waveguide arms simultaneously, and the temperature variation of second waveguide arm and first waveguide arm is identical or unlimited approaching.Like this, the variations in refractive index difference of first waveguide arm and second waveguide arm only changes and determines by adding in first waveguide arm that electric signal source causes carrier concentration, thereby the duty that makes electrooptical switching or optical attenuator drives accurately control by the electric signal source of first waveguide arm.
Description of drawings
Fig. 1 is the structural representation of electrooptical switching disclosed by the invention or optical attenuator.
Fig. 2 is the synoptic diagram of embodiment AA ' section in Fig. 1 of the open electrooptical switching of the present invention or optical attenuator.
Fig. 3 is the synoptic diagram of another embodiment AA ' section in Fig. 1 of the open electrooptical switching of the present invention or optical attenuator.
Fig. 4 is the synoptic diagram of another embodiment AA ' section in Fig. 1 of the open electrooptical switching of the present invention or optical attenuator.
Fig. 5 is the synoptic diagram of another embodiment AA ' section in Fig. 1 of the open electrooptical switching of the present invention or optical attenuator.
Embodiment
Also by reference to the accompanying drawings the present invention is described in detail below by specific embodiment:
Electric light opens the light or optical attenuator is a kind of waveguide device of semiconductor material.The main optical waveguide layer of waveguide is semiconductor material, for example silicon.In order to solve electrooptical switching or the thermal balance question in the optical attenuator and the work efficiency problem that existing silica-based electric light PIN diode constitutes, provide electrooptical switching or the optical attenuator of the single mode operation that several structures based on heat balance method of the present invention constitute.
Fig. 1 is the structural representation of electrooptical switching disclosed by the invention or optical attenuator.As shown in Figure 1, electrooptical switching or optical attenuator 80 comprise a MZI structure 81, and MZI structure 81 comprises two parallel waveguide arms, i.e. first waveguide arm 1 and second waveguide arm 2.First waveguide arm 1 comprises that waveguide capacitor arrangement 13, the second waveguide arms 2 comprise waveguide capacitor arrangement 14.First waveguide arm, 1 external first electric signal source, 15, the second waveguide arms, 2 external second electric signal sources 16.Under 15 effects of first electric signal source, bigger variation takes place in carrier concentration in the waveguide capacitor arrangement 13 of first waveguide arm 1; Under 16 effects of second electric signal source, carrier concentration does not change in the waveguide capacitor arrangement 14 of second waveguide arm, or this carrier concentration changes less than charge carrier concentration change in the waveguide capacitor arrangement 13 of first waveguide arm 1.Under first electric signal source 15 and 16 actings in conjunction of second electric signal source, the temperature variation of first waveguide arm 1 and second waveguide arm 2 is identical or close.
In certain embodiments, the waveguide capacitor arrangement 14 of the waveguide capacitor arrangement 13 of first waveguide arm 1 and second waveguide arm 2 is as disclosed waveguide capacitor arrangement in the United States Patent (USP) 7817881.
In further embodiments, the waveguide capacitor arrangement 14 of the waveguide capacitor arrangement 13 of first waveguide arm 1 and second waveguide arm 2 is with the ridge waveguide structure of semiconductor intrinsic region as the core district.The doping type of the doped region in dull and stereotyped district, the both sides of the ridge waveguide of first waveguide arm 1 is opposite; The flat board district of the ridge waveguide of second waveguide arm 2 comprises two or more doped regions, the both sides of the wave guide ridge of the described ridge waveguide of apportion, and the doping type of described doped region can be identical or opposite.
Fig. 2 is the synoptic diagram of embodiment AA ' section in Fig. 1 of the open electrooptical switching of the present invention or optical attenuator.As shown in Figure 2, in this embodiment, the type opposite of the doped region of the wave guide ridge both sides of the ridge waveguide of first waveguide arm 1 and second waveguide arm 2 all constitutes the PIN diode structure, ridge waveguide 10 comprises the wave guide ridge 11 as the waveguide core district, and ridge waveguide 20 comprises the wave guide ridge 21 as the waveguide core district.The P type doped region 5 of ridge waveguide 10 is made of through the doping P-type semiconductor 12 left sides, flat board district; The N-type doped region 7 of ridge waveguide 10 is made of through the doped N-type semiconductor 12 right sides, flat board district; There is an additional electrodes 6 P type doped region 5 tops of ridge waveguide 10, and there is an additional electrodes 8 N-type doped region 7 tops, can guarantee Ohmic contact by heavy doping is carried out in the zone of additional electrodes 6 and 8 belows.The P type doped region 33 of ridge waveguide 20 is made of through the doping P-type semiconductor 22 right sides, flat board district; The N-type doped region 31 of ridge waveguide 20 is made of through the doped N-type semiconductor 22 left sides, flat board district; There is an additional electrodes 34 P type doped region 33 tops of ridge waveguide 20, and there is an additional electrodes 32 N-type doped region 31 tops, can guarantee Ohmic contact by heavy doping is carried out in the zone of additional electrodes 34 and 32 belows.
Among Fig. 2, the maximum difference of ridge waveguide 10 and ridge waveguide 20 is that their doping content of doped region in dull and stereotyped district 12 and 22, both sides is different, and the doping content of the doped region in the flat board district 22 of ridge waveguide 20 is lower than the doping content of doped region in the flat board district 12 of ridge waveguide 10.The electrode 6 of P type doped region 5 tops of ridge waveguide 10 connects an electric signal source; The electrode 32 of the electrode 8 of N-type doped region 7 tops of ridge waveguide 10 and N-type doped region 31 tops of ridge waveguide 20 is connected, and connects the ground wire of device; The electrode 34 of P type doped region 33 tops of ridge waveguide 20 connects another electric signal source.Because the high carrier concentration that the doping content of P type doped region and N-type doped region is the intrinsic region can be kept, the doping of P type doped region and N-type doped region can be regarded charge carrier as and inject the source.When the carrier concentration of intrinsic region is identical with doping content (being the concentration of P type doped region and N-type doped region majority carrier), PIN diode can enter the electrode injection way, this moment, charge carrier need be filled the whole silicon materials zone between additional electrodes, thereby made the total power consumption of device sharply rise.Under the power same case of two waveguide arms, the difference of the temperature variation of wave guide ridge 21 and wave guide ridge 11 very I ignoring, the therefore refractive index variable quantity unanimity of two waveguide arms that caused by temperature.Because the doping content of the doped region of second waveguide arm 2 is lower than the doping content of the doped region of first waveguide arm 1, charge carrier concentration change amount is than ridge waveguide 10 little several magnitude (the both sides doping content by ridge waveguide 20 determines) in the intrinsic region of ridge waveguide 20, thus ridge waveguide 20 by the caused refractive index variable quantity of carrier concentration variable quantity just than ridge waveguide 10 little a lot.So, guaranteed that electrooptical switching or optical attenuator are in the thermal equilibrium between ridge waveguide 10 and the ridge waveguide 20 under the situation of work, temperature is weakened greatly to the influence of the variations in refractive index of two arms, being first waveguide arm 1 of MZI structure and the variations in refractive index difference between second waveguide arm 2 changes and determines by adding in first waveguide arm 1 that electric signal source causes carrier concentration, thereby has guaranteed the work efficiency of electrooptical switching or optical attenuator.
Fig. 3 is the synoptic diagram of another embodiment AA ' section in Fig. 1 of the open electrooptical switching of the present invention or optical attenuator.The P type doped region 5 of ridge waveguide 10 is made of through the doping P-type semiconductor dull and stereotyped district, wave guide ridge 11 left sides; The N-type doped region 7 of ridge waveguide 10 is made of through the doped N-type semiconductor dull and stereotyped district, wave guide ridge 11 right sides; There is an additional electrodes 6 P type doped region 5 tops of ridge waveguide 10, and there is an additional electrodes 8 N-type doped region 7 tops, can guarantee Ohmic contact by heavy doping is carried out in the zone of additional electrodes 6 and 8 belows.The doping type of the doped region in dull and stereotyped district 22, the both sides of wave guide ridge 21 is identical, being doped region 35 and doped region 37 is made of the flat board district of wave guide ridge 21 left and right sides P-type semiconductor that mixes respectively, and respectively there are an additional electrodes 36 and 38 in doped region 35 and 37 tops, can carry out heavy doping by the zone of additional electrodes 36 and 38 belows and guarantee Ohmic contact.Note that in this embodiment the substrate of ridge waveguide 20 is the P type.
Among Fig. 3, the doping type of the doped region in the flat board district 22 of wave guide ridge 21 both sides of ridge waveguide 20 is all the P type and mixes, and namely wave guide ridge 21 constitutes a PIP structure with both sides doped region 35 and 37, is equivalent to resistance.The electrode 6 of P type doped region 5 tops of ridge waveguide 10 connects an electric signal source; The electrode 36 of the electrode 8 of N-type doped region 7 tops of ridge waveguide 10 and left side doped region 35 tops of ridge waveguide 20 is connected, and connects the ground wire of device; The electrode 38 of right side doped region 37 tops of ridge waveguide 20 connects another electric signal source.
In other embodiments, if the substrate of ridge waveguide 20 is N-type, then the doping type of the doped region in dull and stereotyped district 22, wave guide ridge 21 both sides of ridge waveguide 20 is N-type, thereby constitutes a NIN structure, is equivalent to resistance.
In the embodiment shown in fig. 3, ridge waveguide 10 is a PIN diode, and ridge waveguide 20 is a PIP structure, i.e. resistance.Under the power same case of two waveguide arms, the temperature variation difference of ridge waveguide 10 and ridge waveguide 20 very I to ignore, thereby be consistent by two waveguide arm variations in refractive index that temperature causes, carrier concentration can obviously increase in the intrinsic region of ridge waveguide 10 simultaneously, and carrier concentration can not change in the intrinsic region of ridge waveguide 20.So, guaranteed that electrooptical switching or optical attenuator are in the thermal equilibrium between ridge waveguide 10 and the ridge waveguide 20 under the situation of work, temperature is cancelled the influence of the variations in refractive index of two arms, being first waveguide arm 1 of MZI structure and the variations in refractive index difference between second waveguide arm 2 changes and determines by adding in first waveguide arm 1 that electric signal source causes carrier concentration, thereby has guaranteed the work efficiency of electrooptical switching or optical attenuator.
Fig. 4 is the synoptic diagram of another embodiment AA ' section in Fig. 1 of the open electrooptical switching of the present invention or optical attenuator.As shown in Figure 4, the P type doped region 5 of ridge waveguide 10 is made of flat board district 12 right side doping P-type semiconductors; The N-type doped region 7 of ridge waveguide 10 is made of flat board district 12 left side doped N-type semiconductors; There is an additional electrodes 6 P type doped region 5 tops of ridge waveguide 10, and there is individual additional electrodes 8 N-type doped region 7 tops, can guarantee Ohmic contact by heavy doping is carried out in the zone of additional electrodes 6 and 8 belows.The flat board district 22 of ridge waveguide 20 comprises three doped regions, first doped region 39 is positioned at wave guide ridge 21 near a side of ridge waveguide 10 (namely near first waveguide arm 1), second doped region 41 and the 3rd doped region 43 are positioned at wave guide ridge 21 away from a side of ridge waveguide 10 (namely away from first waveguide arm 1), and second doped region 41 is with respect to the side of the 3rd doped region 43 at close ridge waveguide 10 (namely near first waveguide arm 1), the segment distance of being separated by between second doped region 41 and the 3rd doped region 43.In this embodiment, first doped region 39 and second doped region, the 41 doping alloy identical with the substrate semiconductor type of the ridge waveguide 20 of second waveguide arm 2, the 3rd doped region 43 doping alloy opposite with the aforesaid substrate semiconductor type, namely when the substrate of ridge waveguide 20 is the P type, first doped region 39 and the second doped region 41 P type alloy that all mixes, the 3rd doped region 43 doped N-type alloys; When the substrate of ridge waveguide 20 is N-type, first doped region 39 and second doped region, 41 equal doped N-type alloys, the 3rd doped region 43 doping P type alloys.Respectively there are an additional electrodes 40 and 42 in first doped region 39 of ridge waveguide 20 and second doped region, 41 tops, also there is individual additional electrodes 44 the 3rd doped region 43 tops, can guarantee Ohmic contact to carrying out heavy doping by the zone of additional electrodes 40,42 and 44 belows.In other embodiments, can do a little variations to the structure of second waveguide arm 2, for example increase the position of doped region and adjustment doped region, but should all drop in the scope disclosed by the invention.
In the embodiment shown in fig. 4, be example with the substrate P type of ridge waveguide 20, ridge waveguide 20 is a PIP structure, be equivalent to resistance, and second doped region 41 and the 3rd doped region 43 and the distance between them has constituted a PIN diode jointly.The ground wire of electrode 8 interface units of N-type doped region 7 tops of ridge waveguide 10; The electrode 40,42 of the electrode 6 of P type doped region 5 tops of ridge waveguide 10 and first doped region 39 of ridge waveguide 20, second doped region, 41 tops is connected, and connects an electric signal source respectively, for ridge waveguide 10 and ridge waveguide 20 provide electric signal; The ground wire of electrode 44 interface units of the 3rd doped region 43 tops of ridge waveguide 20.Ridge waveguide 10 constitutes a PIN diode with P type doped region 5 and N-type doped region 7, and second doped region 41 on ridge waveguide 20 right sides and the 3rd doped region 43 also constitute a PIN diode.Under the PIN diode of ridge waveguide 10 situation identical away from the power of the PIN diode of ridge waveguide 10 1 sides with being positioned at ridge waveguide 20, the intrinsic region temperature variation of ridge waveguide 10 is very little with the intrinsic region temperature variation difference of ridge waveguide 20, thereby reaches thermal equilibrium.And, because the doped region 39 and 41 of ridge waveguide 20 both sides all constitutes through the doping P-type semiconductor, thus ridge waveguide 20 under the effect of electric signal source, carrier concentration can not change in the intrinsic region of ridge waveguide 20.So, guaranteed that electric light opens the light or optical attenuator in the thermal equilibrium between ridge waveguide 10 and the ridge waveguide 20 under the situation of work, temperature is cancelled the influence of the variations in refractive index of two arms, being first waveguide arm 1 of MZI structure and the variations in refractive index difference between second waveguide arm 2 changes and determines by adding in first waveguide arm 1 that electric signal source causes carrier concentration, thereby has guaranteed the work efficiency of electrooptical switching or optical attenuator.
Fig. 5 is the synoptic diagram of another embodiment AA ' section in Fig. 1 of the open electrooptical switching of the present invention or optical attenuator.As shown in Figure 5, ridge waveguide 10 covers one deck oxide skin(coating) 26 with ridge waveguide 20 tops, and oxide skin(coating) 26 has some by etching formation electrode contact hole, in contact hole, fill the metal material as electrode then, thereby form electrode 23,24,27 and 28, respectively there is an additional electrodes 27 and 28 of passing oxide skin(coating) 26 the doped region top, both sides that is ridge waveguide 10, can guarantee Ohmic contact by heavy doping is carried out in the zone of additional electrodes 27 and 28 belows.Respectively there is an additional electrodes 23 and 24 of passing oxide skin(coating) 26 the doped region top, both sides of ridge waveguide 20, can guarantee Ohmic contact by heavy doping is carried out in the zone of additional electrodes 23 and 24 belows.Deposited semiconductor material 25 above oxide skin(coating) 26 and each electrode, as polysilicon, germanium, the material that III-V compound semiconductor etc. are fit to.And, by semiconductor material 25 is mixed, make semiconductor material 25 inside between positive and negative electrode, form back-biased PN junction, thereby the semiconductor material 25 on the oxide layer 26 becomes good heat-conducting layer, but can between electrode, not introduce electric current.
In the embodiment shown in fig. 5, the maximum difference with the common electrical optical switch construction is that its oxide skin(coating) 26 and electrode metal layer top have deposited semiconductor material 25.Because the semiconductor material 25 of deposition has coated the fabulous electrode metal layer of pyroconductivity, make the heat energy of below, ridge waveguide 10 places backing material be transferred to ridge waveguide 20 places by electrode metal layer and semiconductor material, so except conducting the heat energy by backing material, this semiconductor material 25 becomes the other passage of heat between ridge waveguide 10 and the ridge waveguide 20.As previously mentioned, a kind of example structure shown in Figure 5 by deposited semiconductor material above oxide skin(coating) and electrode metal layer, reduces the temperature difference between ridge waveguide 10 and the ridge waveguide 20, thereby has reduced the variations in refractive index difference that caused by temperature.First waveguide arm 1 of electrooptical switching or optical attenuator and the variations in refractive index difference between second waveguide arm 2 change and determine by adding in first waveguide arm 1 that electric signal source causes carrier concentration, thereby have guaranteed the work efficiency of electrooptical switching or optical attenuator.In certain embodiments, also can be on architecture basics shown in Figure 4 deposited semiconductor material, strengthen the counteracting to temperature effect, improve the efficient of device.
Above embodiment has been described in detail the present invention, and those skilled in the art can make the many variations example to the present invention according to the above description.Thereby some details in the embodiment should not constitute limitation of the invention, and the scope that the present invention will define with appended claims is as protection scope of the present invention.
Claims (7)
1. an electrooptical switching or optical attenuator, comprise a MZI structure, described MZI structure comprises two parallel waveguide arms, i.e. first waveguide arm and second waveguide arm, described first waveguide arm and second waveguide arm include a waveguide capacitor arrangement, it is characterized in that:
External first electric signal source of described first waveguide arm, external second electric signal source of described second waveguide arm;
Under the described first electric signal source effect, carrier concentration changes in the waveguide capacitor arrangement of described first waveguide arm;
Under the described second electric signal source effect, carrier concentration does not change in the waveguide capacitor arrangement of described second waveguide arm, or this carrier concentration changes less than charge carrier concentration change in the waveguide capacitor arrangement of described first waveguide arm;
Under described first electric signal source and the second electric signal source effect, the temperature variation of described first waveguide arm and second waveguide arm is identical or close.
2. electrooptical switching according to claim 1 or optical attenuator is characterized in that,
Waveguide capacitor arrangement on described first waveguide arm and second waveguide arm is with the ridge waveguide structure of semiconductor intrinsic region as the core district;
The doping type of the doped region in dull and stereotyped district, the both sides of the ridge waveguide of described first waveguide arm is opposite;
The flat board district of the ridge waveguide of described second waveguide arm comprises two or more doped regions, the both sides of the wave guide ridge of the described ridge waveguide of apportion, and the doping type of described doped region can be identical or opposite.
3. electrooptical switching according to claim 2 or optical attenuator is characterized in that,
The doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of described first waveguide arm is opposite, constitutes the PIN diode structure;
The doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of described second waveguide arm is opposite, constitutes the PIN diode structure, and the doping content of the doped region of described second waveguide arm is less than the doping content of the doped region of described first waveguide arm.
4. electrooptical switching according to claim 2 or optical attenuator is characterized in that,
The doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of described first waveguide arm is opposite, constitutes the PIN diode structure;
The doping type of the doped region of the wave guide ridge both sides of the ridge waveguide of described second waveguide arm is identical, constitutes NIN or PIP structure.
5. electrooptical switching according to claim 2 or optical attenuator is characterized in that,
The flat board district of the ridge waveguide of described second waveguide arm comprises three doped regions, wherein first doped region is positioned at the wave guide ridge of described ridge waveguide near a side of described first waveguide arm, and second doped region and the 3rd doped region are positioned at the wave guide ridge of described ridge waveguide away from a side of described first waveguide arm;
Described second doped region is with respect to the side of the 3rd doped region at close described first waveguide arm;
The alloy that described first doped region is identical with the substrate semiconductor type of the ridge waveguide of described second waveguide arm with the doping of second doped region, described the 3rd doped region doping alloy opposite with the aforesaid substrate semiconductor type.
6. electrooptical switching according to claim 1 and 2 or optical attenuator is characterized in that,
Described first waveguide arm and second waveguide arm top are coated with one deck oxide skin(coating), and described oxide layer forms the electrode contact hole by etching, is filled with the metal material as electrode in the described electrode contact hole;
Described oxide skin(coating) and described metal material top deposited semiconductor material;
By described semiconductor material is mixed, make described semiconductor material inside between positive and negative electrode, form back-biased PN junction, thereby becoming good heat-conducting layer, the semiconductor material on the described oxide layer can between electrode, not introduce electric current.
7. electrooptical switching according to claim 6 or optical attenuator is characterized in that, described semiconductor material is polysilicon.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105974613A (en) * | 2016-07-15 | 2016-09-28 | 北京大学 | Electrooptical lumped modulator |
| JP2017156454A (en) * | 2016-02-29 | 2017-09-07 | 国立研究開発法人産業技術総合研究所 | Optical modulator and manufacturing method therefor |
| CN110325900A (en) * | 2016-12-02 | 2019-10-11 | 洛克利光子有限公司 | Waveguide photoelectric device |
| CN113759460A (en) * | 2021-09-14 | 2021-12-07 | 苏州微光电子融合技术研究院有限公司 | Polarization-independent variable optical attenuator |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070058896A1 (en) * | 2003-03-19 | 2007-03-15 | Nippon Telegraph And Telephone Corporation | Optical switch, optical modulator and variable wavelength filter |
| CN101135749A (en) * | 2006-08-30 | 2008-03-05 | 中国科学院半导体研究所 | Double electric capacity metal oxide semiconductor silicon based high speed high modulate efficiency electro optic modulator |
| CN101652702A (en) * | 2007-03-29 | 2010-02-17 | 住友大阪水泥股份有限公司 | Optical waveguide element, and method for restraining temperature crosstalk of optical waveguide element |
| US20110091148A1 (en) * | 2006-06-01 | 2011-04-21 | Bing Li | Circuit architecture for electro-optic modulation based on free carrier dispersion effect and the waveguide capacitor structures for such modulator circuitry using CMOS or Bi-CMOS process |
| CN202433633U (en) * | 2012-01-17 | 2012-09-12 | 上海硅通半导体技术有限公司 | Electro-optical switch or optical attenuator |
-
2012
- 2012-01-17 CN CN201210016037.4A patent/CN103207464B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070058896A1 (en) * | 2003-03-19 | 2007-03-15 | Nippon Telegraph And Telephone Corporation | Optical switch, optical modulator and variable wavelength filter |
| US20110091148A1 (en) * | 2006-06-01 | 2011-04-21 | Bing Li | Circuit architecture for electro-optic modulation based on free carrier dispersion effect and the waveguide capacitor structures for such modulator circuitry using CMOS or Bi-CMOS process |
| CN101135749A (en) * | 2006-08-30 | 2008-03-05 | 中国科学院半导体研究所 | Double electric capacity metal oxide semiconductor silicon based high speed high modulate efficiency electro optic modulator |
| CN101652702A (en) * | 2007-03-29 | 2010-02-17 | 住友大阪水泥股份有限公司 | Optical waveguide element, and method for restraining temperature crosstalk of optical waveguide element |
| CN202433633U (en) * | 2012-01-17 | 2012-09-12 | 上海硅通半导体技术有限公司 | Electro-optical switch or optical attenuator |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017156454A (en) * | 2016-02-29 | 2017-09-07 | 国立研究開発法人産業技術総合研究所 | Optical modulator and manufacturing method therefor |
| CN105974613A (en) * | 2016-07-15 | 2016-09-28 | 北京大学 | Electrooptical lumped modulator |
| CN110325900A (en) * | 2016-12-02 | 2019-10-11 | 洛克利光子有限公司 | Waveguide photoelectric device |
| CN110325900B (en) * | 2016-12-02 | 2023-11-17 | 洛克利光子有限公司 | Waveguide optoelectronic device |
| CN113759460A (en) * | 2021-09-14 | 2021-12-07 | 苏州微光电子融合技术研究院有限公司 | Polarization-independent variable optical attenuator |
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