CN103018929A - Silicon waveguide refractive index calorescence adjusting structure - Google Patents
Silicon waveguide refractive index calorescence adjusting structure Download PDFInfo
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- CN103018929A CN103018929A CN2012105174706A CN201210517470A CN103018929A CN 103018929 A CN103018929 A CN 103018929A CN 2012105174706 A CN2012105174706 A CN 2012105174706A CN 201210517470 A CN201210517470 A CN 201210517470A CN 103018929 A CN103018929 A CN 103018929A
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Abstract
The invention discloses a silicon waveguide refractive index calorescence adjusting structure, which sequentially comprises a substrate, a lower cladding, a waveguide layer, an upper cladding and an electrode layer from bottom to top; the waveguide layer is in a ridge shape, a central area of the ridge shape is a lightly-doped intrinsic area I, and flat areas on two sides of the ridge shape are respectively heavily-doped areas; and two sides of the upper cladding are respectively provided with a metal through hole, and the heavily-doped areas of the waveguide layer are connected with the electrode layer through the through hole. After an external power supply is electrified, the waveguide layer produces heat, the temperature in a waveguide core area is increased, and the refractive index is increased, so that the calorescence adjusting effect is realized. The waveguide layer is used as hot resistance to produce the heat, and the heat source directly acts on a light field, so that compared with a traditional calorescence adjusting structure adopting a metal resistance, the silicon waveguide refractive index calorescence adjusting structure has characteristics of lower power consumption and shorter response time.
Description
Technical field
The present invention relates to the hot light adjustment structure of a kind of silicon waveguide index, belong to the integrated optoelectronics field.
Background technology
In recent years, the integrated electro technical development was rapid, and the size of device is more and more less, and the integrated level of chip is more and more higher, and the sectional dimension of optical waveguide has narrowed down to submicron-scale.Silicon materials are easy to make the fiber waveguide device of submicron order because the high index-contrast between itself and air and the silicon dioxide has very strong light limitation capability; Its manufacture craft and microelectronic integrated circuit process compatible had both greatly reduced cost, were convenient to again realize that photoelectricity is integrated, made it to become one of the most competitive material of photoelectricity integrated chip.Many passive and active integrated optoelectronic devices based on the silicon waveguide are suggested and realize, such as optical filter, optical branching device, photomodulator etc.Adjustment structure in the active device mainly changes waveguide index by electricity or heat effect, thereby changes device performance, realizes the adjustability of device, is the active device important component part.
Because silicon materials do not have linear electrooptic (Pockels) effect, so we need to adopt other modes to realize the ducting layer adjustable refractive index.Current plasma dispersion effect and the thermo-optic effect mainly utilized realizes the adjusting of silicon waveguide index.For the range of adjustment that how to increase adjustment structure, reduce to regulate power consumption, accelerate governing speed, a lot of mechanism deployings both at home and abroad correlative study.The people such as Qianfan Xu are at OPTICS EXPRESS (Vol.12, p-i-n electricity adjustment structure is proposed in the paper of delivering No.2) " 12.5Gbit/s carrier-injection-based silicon micro-ring silicon modulators ", utilize the charge carrier effect of dispersion, change refractive index by the forward bias injected carrier; This structured waveguide adjustable refractive index scope is larger, but the response time is longer, and carrier injection can increase absorption loss.The people such as Ansheng Liu are at OPTICS EXPRESS (Vol.15, No.2) propose in the paper of delivering on " High-speed optical modulation based on carrier depletion in a silicon waveguide " to extract charge carrier by reverse biased and change refractive index with p-n electricity adjustment structure; The response time of this structure is shorter, but because counter emf cell is little, the adjustable refractive index scope is little.The people such as Xi Xiao are at OPTICS EXPRESS (Vol.20, No.3) propose in the paper of delivering on " 25Gbit/s siliconmicroring modulator based on misalignment-tolerant interleaved PN junctions " with toe p-n electricity adjustment structure, extract charge carrier by reverse biased equally, but so that p-n depletion layer and light field overlay region are larger, this structure has higher adjusting efficient with respect to the electric adjustment structure of p-n by the toe design.The people such as Jaime Cardenas are at OPTICS EXPRESS (Vol.18, No.25) utilize the thermo-optic effect of silicon among " the Wide-bandwidth continuously tunable optical delay line using silicon microring resonators " that delivers on, above waveguide, make metal fever resistance, by powering up heating and change waveguide temperature by the conduction heat, thereby regulate the waveguide effective refractive index; This structure adjustable refractive index scope is large, but because heat-transfer rate is slow, and the response time is long, and the adjusting power consumption is larger.
The comprehensive method of having reported, utilize the electric adjustment structure speed of charge carrier effect of dispersion, but range of adjustment is limited, can introduce absorption loss simultaneously, the method is applicable in the modulator, and for needing the larger device of range of adjustment (such as the adjustable delay line etc.) usually to adopt the hot light adjustment structure of metal fever resistance, the method range of adjustment is larger, and power consumption is large, speed is slow but regulate.Therefore, propose that a kind of range of adjustment is large, power consumption is less, and shorter hot light adjustment structure of response time is very important.
Summary of the invention
The object of the invention is to for above-mentioned the deficiencies in the prior art, provide a kind of silicon waveguide index hot light adjustment structure, by powering up waveguide is heated up, utilize thermo-optic effect to regulate the waveguide effective refractive index, thereby realize the adjustable of integrated photonic device.
For achieving the above object, technical solution of the present invention is as follows:
The hot light adjustment structure of a kind of silicon waveguide index, its point is levied and is, comprises successively from bottom to up substrate, under-clad layer, ducting layer, top covering and electrode layer;
Described ducting layer is ridge, and the ridge central area is lightly doped intrinsic i district, and dull and stereotyped district, both sides is respectively heavily doped region; Described top covering both sides are provided with metal throuth hole, and the heavily doped region of ducting layer is linked to each other with electrode layer.
The thickness of described ducting layer is less than 1 μ m, and the thickness of under-clad layer is greater than 1 μ m, and the thickness of top covering is 1 ~ 2 μ m, and electrode layers thickness is greater than 100nm; The material of ducting layer is high-index material silicon, and the material of under-clad layer is silicon dioxide, and the material of top covering is the low-index materials such as silicon dioxide, silicon nitride, and the material of electrode layer is aluminium, copper, golden contour conductive metal material.
Described ducting layer is ridge, and the width of ridge, interior ridge height and ectoloph height satisfy light single mode transport condition; The ridge central area is that the waveguide core district is lightly doped intrinsic i district, and dull and stereotyped district, both sides is heavily doped region respectively, forms hot light adjustment structure; Doping type is p-type or N-shaped, forms p-i-p or n-i-n thermal resistance structure; Light dope concentration is less than 10
17Cm
-3, heavy dopant concentration is greater than 10
18Cm
-3Heavily doped region and waveguide core area edge standoff distance are greater than 0.2 μ m.
Described top covering through hole lays respectively at both sides, intrinsic i district, connects ducting layer both sides heavily doped region and electrode layer, and via material is aluminium, copper, golden contour conductive metal material, and the through hole width is less than the heavily doped region width.
Described electrode layer lays respectively on two side through hole, is connected with metal in the through hole and links to each other with negative pole with the positive pole of external power source.
After the external power source energising, electrode is by the through hole Injection Current, and ducting layer produces heat as thermal resistance, and waveguide core district temperature raises, because thermo-optic effect, waveguide index is along with temperature raises; The resistivity of heavily doped region is far below intrinsic i district, and electric potential difference mainly concentrates on intrinsic i district, so heat mainly results from intrinsic i district.
The present invention is widely used in active adjusting part in the silicon photonic device, as tunable optical filter, light open the light, the making of optical phase shifter, tunable optical delay line, optical logic device etc.
The invention has the beneficial effects as follows and utilize ducting layer self as resistance, after the external power source energising, heat directly results from ducting layer, so that thermal source and light field direct effect, owing to the rising along with temperature of the refractive index of thermo-optic effect waveguide core layer raises, has larger range of adjustment.Therefore with respect to the hot light adjustment structure of tradition, heat does not need to be transmitted to ducting layer from other thermals source by top covering, regulates power consumption lower, and the response time is shorter.
Description of drawings
Fig. 1 is the schematic diagram of the hot light adjustment structure of silicon waveguide index of the present invention.
Fig. 2 is the schematic diagram of the hot light adjustment structure of traditional metal thermal resistance silicon waveguide index.
Fig. 3 is silicon waveguide index hot light adjustment structure electric current of the present invention and voltage relationship figure.
Fig. 4 is that the hot light adjustment structure of silicon waveguide index of the present invention powers up the temperature profile after stablizing.
Fig. 5 is that the hot light adjustment structure of traditional metal thermal resistance silicon waveguide index powers up the temperature profile after stablizing.
The hot light adjustment structure of (a) novel silicon waveguide index of the present invention is regulated power consumption and silicon waveguide effective refractive index graph of a relation among Fig. 6, (b) is that the hot light adjustment structure of traditional metal thermal resistance silicon waveguide index is regulated power consumption and silicon waveguide effective refractive index graph of a relation.
Fig. 7 is that the hot light adjustment structure of silicon waveguide index of the present invention and the hot light adjustment structure of traditional metal thermal resistance silicon waveguide index effective refractive index are regulated figure time response.
Embodiment
Below in conjunction with drawings and Examples the present invention is further elaborated, but should limit protection scope of the present invention with this.
Fig. 1 is the schematic diagram of the hot light adjustment structure of novel silicon waveguide index of the present invention, as shown in Figure 1, the present invention includes:
One substrate 1,
One under-clad layer 2, this under-clad layer are produced on the substrate 1; The thickness of under-clad layer 2 is greater than 1 μ m; This under-clad layer Refractive Index of Material provides constraints to the light in the ducting layer less than ducting layer.
One ducting layer 3, this ducting layer are produced on the under-clad layer 2; The thickness of ducting layer 3 is less than 1 μ m; This ducting layer Refractive Index of Material is higher than under-clad layer 2 and top covering; Ducting layer 3 is the ridge structure, and wherein the width of ridge waveguide ridge, interior ridge height and ectoloph height satisfy light single mode transport condition; The ridge district is that the waveguide core district is lightly doped intrinsic i district 6, and the both sides flat board is respectively heavily doped region 7; Heavily doped region can be that p-type is mixed or N-shaped mixes, and forms respectively p-i-p or n-i-n thermal resistance structure; Light dope concentration is less than 10
17Cm
-3, heavy dopant concentration is greater than 10
18Cm
-3Heavily doped region 7 edges and waveguide core area edge standoff distance are greater than 0.2 μ m.
One top covering 4, this top covering are produced on the ducting layer 3; The thickness of top covering 4 is greater than 0.5 μ m; The material of this top covering can adopt the dielectric materials such as silicon dioxide, silicon nitride, and refractive index is lower than ducting layer 3, and the light in the ducting layer 3 is provided constraints, and simultaneously waveguide is shielded, and makes it to be easy to make electrode; Be manufactured with through hole 8 in the top covering 4; This through hole connects ducting layer both sides heavily doped region 7 and electrode layer; The material of through hole 8 is the metal material of the high conductivity such as aluminium, copper, gold; Through hole 8 width are less than the width of heavily doped region 7.
One electrode layer 5, this electrode layer are produced on the top covering 4; The thickness of electrode layer 5 is greater than 100nm; Electrode layer 5 lays respectively on two side through hole 8, links to each other with negative pole with the positive pole of external power source; The material of electrode layer 5 is the metal material of the high conductivity such as aluminium, copper, gold.
During use, electrode layer is connected with external power source, and by the through hole Injection Current, wherein electric current and voltage relationship are as shown in Figure 3 after the energising.Found by Fig. 3, thermal resistance of the present invention is different from general metal fever resistance, and electric current does not change with voltage linear; Illustrate after voltage increases to certain value, resistance value of the present invention can diminish.Fig. 4 is that the hot light adjustment structure of novel silicon waveguide index of the present invention adds the temperature profile after certain voltage is stablized.By can seeing among the figure because heat mainly results from intrinsic i district 6, so the temperature in intrinsic i district 6 is the highest, as seen thermal source can with the light field direct effect.Fig. 6 (a) can see that for the graph of a relation of effective refractive index in the hot light adjustment structure of novel silicon waveguide index of the present invention with heat power consumption both are linear, increases along with adding heat power consumption, and effective refractive index also increases thereupon.The hot light adjustment structure effective refractive index of novel silicon waveguide index of the present invention curve time response as shown in Figure 7.
Embodiment
Under-clad layer 2 thickness are 2 μ m in the present embodiment; The width of ducting layer 3 ridges is 500nm, and interior ridge height is 220nm, and the ectoloph height is 60nm; Top covering 4 thickness are 1.5 μ m.Heavily doped region 7 mixes for p-type, and width is 4 μ m, doping content 10
20Cm
-3Light dope intrinsic i district 6 doping contents 10
15Cm
-3Heavily doped region 7 edges and waveguide core area edge interval 300nm; Through hole width 1 μ m; Form p-i-p thermal resistance structure.This p-i-p thermal resistance structure voltage and current relationship as shown in Figure 3, voltage is increased to ~ 9.5V after, electrical resistance voltage raises and constantly reduces.When impressed voltage 4V, stable after this structure temperature distribution plan as shown in Figure 4, heat mainly results from intrinsic i district 6, this regional temperature is the highest, as seen thermal source can with the light field direct effect.Compare with the hot light adjustment structure of traditional metal thermal resistance silicon waveguide index and the present invention, substrate layer 1, under-clad layer 2, ducting layer 3 are the same with the present invention with top covering 4 dimensional parameters; Ducting layer 3 does not mix; Be manufactured with metal fever resistance directly over the waveguide core district, resistance width 4 μ m.This structure is by powering up the generation heat to metal fever resistance, and the conduction heat is to the waveguide core district.After metal fever resistance powered up and stablizes, the hot light adjustment structure of this traditional metal thermal resistance silicon waveguide index Temperature Distribution can see that the temperature of thermal source metal fever resistance is the highest as shown in Figure 5, and heat is transmitted to the waveguide core district by top covering.This hot light adjustment structure of p-i-p thermal resistance silicon waveguide index and traditional metal thermal resistance silicon waveguide index hot light adjustment structure effective refractive index and power consumption relation are shown in Fig. 6 (a) and 6 (b); Can see that thermal resistance of the present invention is 3.25e-5m/W to the adjusting efficient of silicon waveguide effective refractive index, regulate efficient 2.87e-5m/W greater than traditional thermal resistance.Therefore hot light adjustment structure power consumption of the present invention is lower than the structure that adopts the heat conduction of traditional metal thermal resistance.Fig. 7 is hot light adjustment structure figure time response of p-i-p thermal resistance structure and traditional metal thermal resistance for this reason.We define the rise time is that effective refractive index rose for 10% to 90% required time, and fall time, to be effective refractive index descended for 10% to 90% required time.The structure rise time of the present invention is 12.0 μ s, and traditional structure fall time is 13.8 μ s; Because waveguiding structure is all the same with size, all be 15.5 μ s fall time, and therefore, hot light adjustment structure of the present invention is faster than traditional thermal resistance total time response.
By relatively, can draw the hot light adjustment structure of novel silicon waveguide index of the present invention and all be better than the hot light adjustment structure of traditional metal thermal resistance silicon effective refractive index in adjusting power consumption, adjusting aspect time response.
The above; only be embodiment and embodiment among the present invention, but protection scope of the present invention is not limited to this, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (6)
1. the hot light adjustment structure of silicon waveguide index is characterized in that, comprises successively from bottom to up substrate (1), under-clad layer (2), ducting layer (3), top covering (4) and electrode layer (5);
Described ducting layer is ridge, and the ridge central area is lightly doped intrinsic i district, and dull and stereotyped district, both sides is respectively heavily doped region; Described top covering both sides are provided with metal throuth hole, and the heavily doped region of ducting layer is linked to each other with electrode layer.
2. the hot light adjustment structure of silicon waveguide index according to claim 1, it is characterized in that, the material of described ducting layer is high-index material silicon, and the material of under-clad layer is silicon dioxide, the material of top covering is low-index material, and the material of electrode layer is the high-conductivity metal material.
3. the hot light adjustment structure of silicon waveguide index according to claim 2 is characterized in that, the material of top covering is silicon dioxide or silicon nitride, and the material of electrode layer is aluminium, copper or gold.
4. the hot light adjustment structure of silicon waveguide index according to claim 1, it is characterized in that, described ducting layer is ridge, the width of ridge, interior ridge height and ectoloph height satisfy light single mode transport condition, the ridge central area is that the waveguide core district is lightly doped intrinsic i district, dull and stereotyped district, both sides is heavily doped region respectively, forms hot light adjustment structure.
5. the hot light adjustment structure of silicon waveguide index according to claim 3 is characterized in that, the doping type of described heavily doped region is p-type or N-shaped, and the concentration in lightly doped intrinsic i district is less than 10
17Cm
-3, the heavy dopant concentration of heavily doped region is greater than 10
18Cm
-3
6. the hot light adjustment structure of silicon waveguide index according to claim 1 is characterized in that, described electrode layer is to be made of the conductive metallic material that is positioned on top covering two side through hole, and electrode layer links to each other with negative pole with the positive pole of external power source.
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| CN104393133A (en) * | 2014-12-05 | 2015-03-04 | 武汉邮电科学研究院 | Doping structure for improving efficiency and bandwidth of silicon-based electro-optic tuning device |
| CN104991399A (en) * | 2015-07-13 | 2015-10-21 | 上海交通大学 | Structure reducing micro cavity thermal-optical bistable state power threshold via photoresistance feedback |
| CN105388638A (en) * | 2015-12-24 | 2016-03-09 | 上海交通大学 | Silicon waveguide thermo-optic adjusting structure |
| CN106291990A (en) * | 2016-08-29 | 2017-01-04 | 上海交通大学 | Silica-based note oxygen capacitor type electrooptic modulator |
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| CN105388638A (en) * | 2015-12-24 | 2016-03-09 | 上海交通大学 | Silicon waveguide thermo-optic adjusting structure |
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Application publication date: 20130403 |