CN112394542A - Integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor - Google Patents
Integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor Download PDFInfo
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- CN112394542A CN112394542A CN202011278842.5A CN202011278842A CN112394542A CN 112394542 A CN112394542 A CN 112394542A CN 202011278842 A CN202011278842 A CN 202011278842A CN 112394542 A CN112394542 A CN 112394542A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
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- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses an integrated optical phase shifter based on a two-dimensional material/a phase-change material/a semiconductor. The optical phase shifter is characterized in that a doped optical waveguide is formed on a semiconductor substrate through active doping and partial etching, a low-loss phase-change material layer is deposited on the doped optical waveguide, a two-dimensional material layer covers the top of the phase-change material layer, the whole structure is located between an upper cladding layer and a lower cladding layer, and two metal flat plate electrodes on the top of the upper cladding layer are respectively in contact with a doped semiconductor and the two-dimensional material layer through windows or through holes. The doped semiconductor and the two-dimensional material layer are respectively used as two electrodes for regulating and controlling the phase-change material layer, and are used for enabling an external current to pass through the phase-change material layer and enabling the phase-change material layer to generate Joule heat, and further inducing the phase-change material layer to generate phase change. Compared with the traditional optical phase shifter based on the effects of thermo-optic, electro-optic, carrier dispersion and the like, the phase shifter can realize the non-volatile optical phase shifter with any phase, and has the characteristics of long-acting near-zero power consumption, high integration, compact device structure and the like.
Description
Technical Field
The invention belongs to the field of optics, relates to an optical device, and particularly relates to an integrated optical phase shifter based on a two-dimensional material/a phase-change material/a semiconductor.
Background
The photoelectric integration technology promoted by the semiconductor technology can realize the chip formation of a huge optical system and a link, thereby greatly reducing the power consumption and the cost, having wide application in communication interconnection, and having huge application prospect in the fields of sensing imaging, artificial intelligence and the like. In an integrated optoelectronic chip, the designed functions of the optical chip can be realized by regulating and controlling optical signals propagating in the waveguide.
The integrated optical phase shifter is an optical device for regulating and controlling the phase of an optical wave, and can also realize devices such as an optical phased array, a modulator, a delay line, a variable optical attenuator and the like through phase shift. The phase control of the light wave mainly depends on the control of the refractive index of the waveguide, and the realization modes of the current adjustable phase shifter mainly comprise thermo-optic control, electro-optic effect, free carrier dispersion, plasma effect and the like. These refractive index control methods are different in high-speed or low-power modulation, but the change amount of the refractive index achieved in the control is not large, and the device length is usually long. In addition, after external energy supply is stopped, the changed state of the device can be recovered to the state before regulation, namely, the regulation means does not have non-volatility, so that the static power consumption is high.
The chalcogenide phase change material is a material which can generate rapid (up to subnanosecond level) reversible solid phase change under the induction of light/electric pulse and generate great optical property difference before and after phase change. Due to the unique non-volatility, the chalcogenide phase change material is integrated, and a non-volatile optical device without static power consumption can be realized. Heretofore, due to conventional chalcogenide phase change materials (e.g., Ge)2Sb2Te5Etc.) the adjustment and control of the refractive index are accompanied with the rise of the light absorption loss, and although the adjustment and control of the light intensity are easy to realize, the adjustment and control can not be carried out only aiming at the phase position of the light on the premise of ensuring the light intensity to be unchanged.
Reversible regulation and control of the phase-change integrated optical device are mainly realized by means of laser pulses or electric pulses. The electric regulation has the advantages of high stability, high integration level and the like, and is a regulation and control mode which is very suitable for being applied to a photoelectric integrated chip. However, indium tin oxide, metal electrodes, and the like used in conventional electrical regulation have absorption loss, which is disadvantageous in reducing the insertion loss of devices; also, although forming a heater in a doped silicon waveguide (as in patent CN109917565A) or making a micro-heater from graphite (as in DOI:10.23919/CLEO.2019.8749567) can cause the phase change material to undergo a phase change by thermal conduction, the energy efficiency of indirect heating is relatively low.
Disclosure of Invention
The invention aims to provide an integrated optical phase shifter based on a two-dimensional material/a phase-change material/a semiconductor, which can realize any phase shift with non-volatility, realize nanosecond-level rapid regulation and control with ultralow loss, high stability and high energy efficiency and has no static power consumption. Meanwhile, the integrated optical phase shifter can realize CMOS compatible monolithic integration in process, has cycle life of trillion times, and is a device with excellent performance and industrialization foundation. The integrated optical phase shifter solves the problems that the existing phase-change integrated optical device cannot realize pure phase regulation and control of unbinding with intensity regulation and control, the efficiency of a phase-change regulation and control structure is not high enough, and obvious optical loss is introduced.
The technical scheme of the invention is as follows:
an integrated optical phase shifter based on two-dimensional materials/phase change materials/semiconductors is characterized in that an integral structure is arranged on a semiconductor substrate, a lower cladding is arranged on the semiconductor substrate, a ridge optical waveguide layer and a doped optical waveguide are arranged on the lower cladding, a phase change material layer is arranged on the doped optical waveguide, a two-dimensional material layer is arranged on the phase change material layer, and the upper part of the structure is covered by an upper cladding;
the structure is also provided with two metal flat plate electrodes which are respectively connected with the doped optical waveguide and the two-dimensional material layer;
the lower cladding layer is provided with an intrinsic semiconductor layer, and the ridge optical waveguide layer is obtained by partially etching the intrinsic semiconductor layer; the doped optical waveguide is obtained by doping a ridge optical waveguide layer in an active region;
the phase change material layer is a low-loss phase change material layer, and the difference between the extinction coefficients of the amorphous state and the crystalline state is not more than 0.5 under the working wavelength of the phase shifter.
In the above technical solution, further, the doped optical waveguide and the two-dimensional material layer are used as two electrodes contacting the phase-change material layer, and the doped optical waveguide and the two-dimensional material layer have functions of allowing an external current to pass through the phase-change material layer and allowing the phase-change material layer to generate joule heat, thereby inducing the phase-change material layer to generate phase change.
Further, the phase-change material layer is a compound consisting of any two to four elements of Ge, Sb, Se or Te and a doped compound of N, O, Si thereof.
Furthermore, the doped optical waveguide is doped in a p-i-p type, a n-i-n type, a p type and an n type.
Further, the material of the semiconductor substrate includes, but is not limited to, any one of silicon, germanium, indium phosphide, indium antimonide, and III-V compound of gallium arsenide, and the material of the lower cladding includes, but is not limited to, SiO2Silicon nitride, silicon oxynitride, aluminum oxide or zinc sulfide-silicon dioxide, indium phosphide, indium antimonide, a III-V composite compound of gallium arsenide, and the like, and the material of the ridge optical waveguide layer includes, but is not limited to, any one of silicon, silicon carbide, silicon nitride, indium germanium phosphide, indium antimonide, gallium arsenide, a composite compound thereof, and a quantum well.
Further, the material of the upper cladding layer is one of silicon dioxide, silicon nitride, silicon oxynitride, aluminum oxide or zinc sulfide-silicon dioxide.
Further, the two-dimensional material layer is a material composed of a single layer or a few layers of atoms or molecular layers, wherein the layers are connected by stronger covalent bonds or ionic bonds, and the layers (if any) are connected by van der waals force, and includes but is not limited to doped or undoped graphene, transition metal sulfides, black phosphorus and other two-dimensional materials; the few layers are less than 10 layers.
Furthermore, the doped optical waveguide is connected with the metal plate electrode through a first through hole, and the two-dimensional material layer is connected with the metal plate electrode through a second through hole.
Furthermore, through changing the power of the external electric pulse, joule heat with different sizes is generated in the phase change material layer and phase change with different degrees is generated, so that light transmitted in the waveguide can obtain any phase shift between 0 pi and 2 pi.
The invention principle of the invention is as follows:
the invention provides a high-performance phase-change integrated photoelectric device, which is characterized in that a transparent electrode is used for electrifying a phase-change material, the phase-change material is heated by Joule heat generated when current passes through the phase-change material to generate phase change, and further refractive index change is generated under the condition that loss of an optical waveguide is not obviously increased, so that a compact, high-energy-efficiency, low-power-consumption, fast and adjustable nonvolatile integrated optical phase shifter can be obtained. The transparent electrode is an electrode without absorption loss at the working wavelength of the integrated optical phase shifter.
The principle of the invention for realizing the optical phase shift is that electric pulses with different energy, duration or number are applied through two metal plate electrodes respectively connected with a doped optical waveguide and a two-dimensional material layer, so that the current flows through a phase change material layer positioned between the doped optical waveguide and the two-dimensional material layer, joule heat is generated in the phase change material layer, the phase change material layer is subjected to phase change in different degrees and presents different refractive indexes under the condition of no obvious loss rise, the effective refractive index of the doped optical waveguide is changed, and the light in the waveguide obtains any phase shift between 0 and 2 pi.
Compared with the prior art, the invention has the beneficial effects that:
the integrated optical phase shifter is constructed by using the low-loss phase-change material, the phase-change material only changes the real part of the refractive index during phase change without obvious loss increase, and the phase-change material can realize 0-2 pi random phase shift with non-volatility and no static power consumption; the integrated optical phase shifter utilizes the doped optical waveguide and the two-dimensional material layer as transparent electrodes, directly generates Joule heat in the phase change material layer, and has the advantages of low optical loss, high energy efficiency and high regulation and control speed. Meanwhile, the integrated optical phase shifter can realize CMOS compatible monolithic integration in process, has cycle life of trillion times, and is a device with excellent performance and industrialization foundation.
Drawings
FIG. 1 is a schematic diagram of the structure of an integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor according to the present invention, which includes a schematic cross-sectional diagram of a device inactive region (FIG. 1(a)) and an active region (FIG. 1 (b));
fig. 2 is a schematic diagram of the operation of an integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor according to the present invention, where fig. 2(a) shows the current flowing in the active region after a voltage is applied between two metal plate electrodes of the optical phase shifter, and fig. 2(b) shows the phase change caused by the temperature rise of the phase change material layer;
FIG. 3 is a schematic cross-sectional view of the active region of an integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor according to embodiment 2 of the present invention, wherein the optical waveguide of the active region is doped p-i-n type;
fig. 4 is a schematic cross-sectional view of the active region of the device of embodiment 3 of the integrated optical phase shifter based on two-dimensional material/phase-change material/semiconductor according to the present invention, wherein the metal plate electrode is in direct contact with the doped optical waveguide and the graphene.
In fig. 1 to 4, 101 denotes a semiconductor substrate, 102 denotes a lower cladding layer, 103 denotes a ridge optical waveguide layer, and 105 denotes an upper cladding layer; 203 is a doped optical waveguide, 204 is a phase change material layer, 206 is a two-dimensional material layer, and 207 is a metal plate electrode.
In FIGS. 1-3, 207-1 is a first via and 207-2 is a second via.
In FIG. 3, 203-1 is a p-type doped region, 203-2 is an undoped region, and 203-3 is an n-type doped region.
Detailed Description
The following further illustrates the invention by means of specific examples, which should not be construed as in any way limiting the scope of the invention.
Example 1
The structure of an integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor is shown in figure 1, and the cross-sectional schematic diagram of the active region of the device is shown in figure 1 (b). It is composed ofThe middle semiconductor substrate 101 is made of silicon-on-insulator (SOI), i.e. the semiconductor substrate 101 is provided with a 2 μm insulating layer SiO2(i.e., lower cladding 102), and a 500nm wide ridge optical waveguide layer 103 formed by etching 220nm thick intrinsic silicon on the lower cladding 102, the etching depth being 70 nm; in the active region of the device, the ridge optical waveguide layer 103 is doped with p-type boron (doping concentration is 10)20cm-3) Forming a doped optical waveguide 203, using Sb with a thickness of 50nm as the phase-change material layer 2042S3The device is made of SiO2After the dielectric material, i.e., the upper cladding layer 105, is deposited and planarized, the graphene is transferred to obtain a two-dimensional material layer 206; the whole structure is SiO again2The dielectric material, i.e. the upper cladding layer 105, said doped silicon waveguide 203 and the two-dimensional material layer 206 are connected to two metal plate electrodes 207 through two metal vias 207-1 and 207-2, respectively.
Fig. 2 is a schematic diagram of the operation of an integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor. As shown in fig. 2(a), when a voltage is applied between two metal plate electrodes 207 of the optical phase shifter, a current flows through the phase change material layer 204 and joule heat is generated due to the resistance of the phase change material layer 204, so that the phase change material layer 204 is raised in temperature and phase change occurs. As shown in fig. 2(b), when the temperature of the phase-change material layer 204 is raised above its melting temperature and rapidly cooled by the action of the electric pulse, the phase-change material layer 204 will assume a low-index amorphous state (state 1); when the electric pulse raises the temperature of the phase-change material layer 204 above the crystallization temperature and below the melting temperature, the number of pulses or the pulse energy is controlled to make the phase-change material exhibit a plurality of crystalline states (states 2 to m) with different degrees of crystallinity, so that the refractive index thereof gradually increases, and the loss thereof can be kept substantially constant. These different states of refractive index will cause the waveguide to exhibit different effective refractive indices and introduce different phase delays for light propagating in the waveguide.
Example 2
An integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor has the same passive region structure as the cross-sectional view of the passive region in fig. 1, and the active region structure is shown in the cross-sectional view in fig. 3. The difference from embodiment 1 is the doping type of the doped optical waveguide 203Is doped p-i-n type. Wherein the doping concentration of the p-type doped region 203-1 is 1020cm-3Boron, n-type doped region 203-3 with a doping concentration of 1020cm-3And the undoped region 203-2 is undoped.
Example 3
An integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor has the same passive region structure as the cross-sectional view of the passive region in fig. 1, and the active region structure is shown in fig. 4, which is different from the embodiment 1 and the embodiment 2 in that a doped optical waveguide 203 and a two-dimensional material layer 206 are respectively connected with two metal plate electrodes 207 in direct contact.
The above description is only a single embodiment of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and substitutions can be made without departing from the spirit of the invention, such as using a phase change film of other composition, using other types of semiconductors, two-dimensional materials or phase change materials, or adding other cladding layers to the surface of the two-dimensional material, and such modifications and substitutions should be considered as within the scope of the invention.
Claims (9)
1. An integrated optical phase shifter based on a two-dimensional material/a phase-change material/a semiconductor is characterized in that an integral structure is arranged on a semiconductor substrate (101), a lower cladding (102) is arranged on the semiconductor substrate (101), a ridge optical waveguide layer (103) and a doped optical waveguide (203) are arranged on the lower cladding (102), a phase-change material layer (204) is arranged on the doped optical waveguide (203), a two-dimensional material layer (206) is arranged on the phase-change material layer (204), and the upper part of the structure is covered by an upper cladding (105);
the structure is also provided with two metal flat plate electrodes (207), and the two metal flat plate electrodes (207) are respectively connected with the doped optical waveguide (203) and the two-dimensional material layer (206);
an intrinsic semiconductor layer is arranged on the lower cladding layer (102), and the ridge-shaped optical waveguide layer (103) is obtained by partially etching the intrinsic semiconductor layer; the doped optical waveguide (203) is obtained by doping a ridge optical waveguide layer (103) in an active region;
the phase change material layer (204) is a low-loss phase change material layer (204), and the difference between the extinction coefficients of the amorphous state and the crystalline state is not more than 0.5 under the working wavelength of the phase shifter.
2. An integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor as claimed in claim 1, wherein the doped optical waveguide (203) and the two-dimensional material layer (206) are used as two electrodes contacting the phase change material layer (204) for passing an applied current through the phase change material layer (204) and generating joule heat in the phase change material layer (204) itself, thereby inducing the phase change of the phase change material layer (204).
3. An integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor as claimed in claim 1 wherein the phase change material layer (204) is a compound of any two to four elements of Ge, Sb, Se or Te and its N, O, Si doped compound.
4. An integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor as claimed in claim 1 wherein the doped optical waveguide (203) is p-i-n doped, p-i-p doped, n-i-n doped, p doped or n doped.
5. An integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor as claimed in claim 1, characterized in that the material of the semiconductor substrate (101) is any one of silicon, germanium, indium phosphide, indium antimonide, gallium arsenide; the material of the lower cladding (102) is SiO2Any one of silicon nitride, silicon oxynitride, aluminum oxide, zinc sulfide-silicon dioxide, indium phosphide, indium antimonide or gallium arsenide; the ridge optical waveguide layer (103) is made of any one of silicon, silicon carbide, silicon nitride, germanium indium phosphide, indium antimonide, gallium arsenide, a composite compound thereof and a quantum well.
6. An integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor as claimed in claim 1 wherein the material of the upper cladding layer (105) is one of silicon dioxide, silicon nitride, silicon oxynitride, aluminum oxide or zinc sulfide-silicon dioxide.
7. An integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor as claimed in claim 1 wherein the two-dimensional material layer (206) is composed of a single or few atomic or molecular layers, including doped or undoped graphene, transition metal sulfide or black phosphorus; the few layers are less than 10 layers.
8. An integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor as claimed in any one of claims 1 to 7 wherein the doped optical waveguide (203) is connected to the metal plate electrode (207) through a first via (207-1) and the two-dimensional material layer (206) is connected to the metal plate electrode (207) through a second via (208-2).
9. An integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor as claimed in any one of claims 1 to 7, wherein the phase change material layer (204) generates different amounts of Joule heat and different degrees of phase change by changing the power of the applied electric pulse, so as to obtain any phase shift between 0 and 2 pi for the light propagating in the waveguide.
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| CN114815324A (en) * | 2022-06-28 | 2022-07-29 | 中山大学 | Polarization regulation and control device based on silicon-based phase-change material |
| CN114839715A (en) * | 2022-04-22 | 2022-08-02 | 江南大学 | Non-volatile phase change reconfigurable silicon-based mode converter and manufacturing method thereof |
| CN115308851A (en) * | 2022-07-01 | 2022-11-08 | 复旦大学 | Non-vertical indirect electric heating device compatible with silicon optical integration process |
| CN116500722A (en) * | 2023-06-25 | 2023-07-28 | 之江实验室 | Low-loss fast switching PIN electro-optic phase shift structure |
| CN116837463A (en) * | 2023-06-20 | 2023-10-03 | 中国科学院上海微系统与信息技术研究所 | Preparation method of modulation device based on silicon carbide and modulation device |
| CN116837463B (en) * | 2023-06-20 | 2024-06-28 | 中国科学院上海微系统与信息技术研究所 | Preparation method of modulation device based on silicon carbide and modulation device |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114839715A (en) * | 2022-04-22 | 2022-08-02 | 江南大学 | Non-volatile phase change reconfigurable silicon-based mode converter and manufacturing method thereof |
| CN114815324A (en) * | 2022-06-28 | 2022-07-29 | 中山大学 | Polarization regulation and control device based on silicon-based phase-change material |
| CN114815324B (en) * | 2022-06-28 | 2022-10-28 | 中山大学 | Polarization regulation and control device based on silicon-based phase-change material |
| CN115308851A (en) * | 2022-07-01 | 2022-11-08 | 复旦大学 | Non-vertical indirect electric heating device compatible with silicon optical integration process |
| CN115308851B (en) * | 2022-07-01 | 2023-12-05 | 复旦大学 | Non-vertical indirect electric heating device compatible with silicon light integration process |
| CN116837463A (en) * | 2023-06-20 | 2023-10-03 | 中国科学院上海微系统与信息技术研究所 | Preparation method of modulation device based on silicon carbide and modulation device |
| CN116837463B (en) * | 2023-06-20 | 2024-06-28 | 中国科学院上海微系统与信息技术研究所 | Preparation method of modulation device based on silicon carbide and modulation device |
| CN116500722A (en) * | 2023-06-25 | 2023-07-28 | 之江实验室 | Low-loss fast switching PIN electro-optic phase shift structure |
| CN116500722B (en) * | 2023-06-25 | 2023-09-22 | 之江实验室 | Low-loss fast switching PIN electro-optic phase shift structure |
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