CN115308851B - Non-vertical indirect electric heating device compatible with silicon light integration process - Google Patents
Non-vertical indirect electric heating device compatible with silicon light integration process Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 76
- 238000005485 electric heating Methods 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- 230000008569 process Effects 0.000 title claims abstract description 26
- 230000010354 integration Effects 0.000 title claims abstract description 18
- 239000012782 phase change material Substances 0.000 claims abstract description 104
- 239000010410 layer Substances 0.000 claims abstract description 90
- 230000003287 optical effect Effects 0.000 claims abstract description 54
- 239000011247 coating layer Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 30
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 230000031700 light absorption Effects 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000002441 reversible effect Effects 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 19
- 230000033228 biological regulation Effects 0.000 abstract description 8
- 230000008859 change Effects 0.000 abstract description 4
- 238000000231 atomic layer deposition Methods 0.000 description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 230000006870 function Effects 0.000 description 12
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 12
- 238000001451 molecular beam epitaxy Methods 0.000 description 12
- 238000007740 vapor deposition Methods 0.000 description 12
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 150000002736 metal compounds Chemical class 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 241000724291 Tobacco streak virus Species 0.000 description 5
- 238000005253 cladding Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000005280 amorphization Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000233 ultraviolet lithography Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4266—Thermal aspects, temperature control or temperature monitoring
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12135—Temperature control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/14—Thermal energy storage
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention belongs to the technical field of micro-nano photoelectrons, and particularly relates to a non-vertical indirect electric heating device compatible with a silicon light integration process. The non-vertical indirect electrical heating structure comprises an optical waveguide, a phase change material layer, an insulating coating layer, a heater and a Through Silicon Via (TSV). Wherein the phase change material layer is positioned on the optical waveguide or embedded in the optical waveguide; the heater and the TSV are positioned above the phase change material layer in the insulating coating layer, are not perpendicular to the phase change material layer, and are perpendicular or parallel to the waveguide. The invention can be used for the thermal control and switching of the photon phase change device in the integrated optical circuit. The invention combines the indirect heating structure of the heater and the non-vertical design of the heater, avoids extra loss, reduces the non-uniform heating of the phase change material, and realizes compatibility with the standard silicon light integration process. The invention provides a simple and convenient regulation strategy for developing the photonic phase-change device and array which are reliable, efficient, low-loss and compatible with the silicon light integration standard process.
Description
Technical Field
The invention belongs to the technical field of micro-nano photoelectrons, and particularly relates to a non-vertical indirect electric heating device compatible with a silicon light integration process.
Background
The chalcogenide phase change material has the advantages of nanosecond switching speed, high durability, long retention time and the like, can control the amplitude and the phase of light simultaneously in a compact shape, and provides a plurality of high-performance optical devices for advanced applications such as memory calculation, reflection display, tunable super-surface, reconfigurable photonics and the like. With the significant increase in the number of photonic devices in integrated optical circuits, all-optical modulation methods present significant challenges for the generation and routing of optical signals. However, compact circuitry and multilevel interconnects can directly generate and route electrical control signals into individual photonic devices. Therefore, the development of reliable, efficient and high-speed electrothermal structures to control optical phase change devices is one of the important research points of micro-nano optoelectronics today.
The method for realizing the heat control in the current silicon light integration standard process mainly comprises the following steps: the lightly doped silicon waveguide is directly heated, the phase change material is directly heated, and the heater is indirectly heated. Lightly doped silicon waveguides are simple to manufacture and heat uniformly, but introduce additional losses into the waveguide. The direct heating of the phase change material is realized by directly connecting an electrode with the phase change material, so that current passes through the phase change material to generate Joule heat to induce phase change; the heating method can realize nanosecond (ns) level switching speed and picojoule (pJ) level low energy consumption, but the local conductive path formed in the crystallization process can limit the current to the area, so that the heating and crystallization efficiency of other areas is obviously reduced. The indirect heating of the heater is realized by a heater which is positioned right above the waveguide and embedded in the insulating coating layer; although the structure is heated uniformly and has simple process, the position of the heater is overlapped with the phase change material window, and the structure cannot be realized through the traditional silicon light integration standard process.
Disclosure of Invention
Based on the above-mentioned problems, the present invention aims to provide a non-vertical indirect electric heating device compatible with silicon optical integration technology, so as to realize the thermal control and switching of the photon phase change device in the integrated optical circuit.
The invention provides a non-vertical indirect electric heating device, which has the following structures from bottom to top: a substrate, an optical waveguide, a phase change material layer, an insulating coating layer, a heater and a Through Silicon Via (TSV); wherein the phase change material layer 12 is square, the optical waveguide 11 is strip-shaped, and the phase change material layer 12 is positioned above the middle position of the optical waveguide 11 or embedded into the optical waveguide 11; and both are coated at the middle position of the insulating coating layer 13; the TSV15 is above the heater 14, and two ends of the heater are respectively connected with the TSV to form an electric loop; both are located beside the insulating cladding 13, i.e. the heater 14 and the TSV15 are located above the phase change material layer 12 in the insulating cladding and perpendicular or parallel to the optical waveguide 11; the bottom of which is spaced vertically (level difference) 16 from the phase change material layer 12 and the inner side of which is spaced horizontally 17 from the side of the phase change material layer 12. Wherein the TSV15 and the heater 14 may be 1 group, 2 group, 3 group, or 4 group, and are correspondingly distributed on one side, two sides, 3 sides, or four sides of the phase change material layer 12; the heater 14 forms a symmetrical or surrounding structure; the heating structure has the advantages that: no extra loss is introduced, uniform heating can be realized through a heater with a symmetrical structure or a surrounding structure, the process is simple and convenient, and the silicon light integration standard process is compatible.
Alternatively, the optical waveguide of the non-vertical indirect electric heating device may be one of a bar waveguide, a ridge waveguide, a slit waveguide, and the like.
Alternatively, the material of the optical waveguide must have a transparent window in the optical wavelength band (e.g., C-band and L-band), and Si can be used as the waveguide material 3 N 4 、Si、LiNbO 3 And the like.
Alternatively, in the non-vertical indirect electric heating device, the phase change material layer may be a simple phase change material film or array, or may be a phase change material device with a special structure or function.
Alternatively, the phase change material layer may be covered over the optical waveguide, or may be embedded inside the optical waveguide.
Alternatively, the phase change material layer may be subjected to at least one of light absorption generated heat, electric generated joule heat, direct heating by a thermal field, and the like, to achieve reversible state transition of the material.
Optionally, in the non-vertical indirect electric heating device, the insulating coating layer is ITO or Al 2 O 3 、SiO 2 、HfO 2 And the insulating materials which are transparent or weakly absorbed in the light wave bands, are less influenced by light intensity and temperature and have higher heat conductivity. The insulating coating material may be formed by a method such as PVD, PECVD, ALD.
Optionally, in the non-vertical indirect electric heating device, the heater and the TSV may be located at one side of the phase change material layer, so as to implement a basic thermal regulation function; and the heat regulating and controlling device can be positioned on two sides of the phase change material layer or around the phase change material layer, so as to realize a more uniform heat regulating and controlling function. Both ends of the heater are respectively connected with the TSVs to form an electric loop.
Alternatively, the heater material must have a high electrical resistivity, thermal conductivity and melting point, and one or more of TiN, W, pd, etc. may be selected.
The non-vertical indirect electric heating device does not introduce extra loss, realizes uniform heating through the heater with a symmetrical structure or a surrounding structure, has simple and convenient technical process and is compatible with a silicon light integration standard process; the method is suitable for precisely controlling the optical device network on the large-scale die.
Drawings
Fig. 1 is a schematic cross-sectional view of a non-vertical indirect electric heating apparatus of example 1.
Fig. 2 is a diagram showing optional positions of heaters and TSVs in the non-vertical indirect electric heating apparatus of embodiment 1.
Fig. 3 is a schematic view of a heater with a ring structure in the non-vertical indirect electric heating apparatus of embodiment 1.
Fig. 4 is a non-vertical indirect electrical heating structure compatible with the standard process for silicon optointegration of example 2.
Fig. 5 is a single-sided structure of the heater and TSV.
Fig. 6 is a non-vertical indirect electrical heating structure compatible with the standard process for silicon optointegration of example 3.
Fig. 7 shows a heater and a TSV of embodiment 3 using a double-sided structure.
Reference numerals in the drawings: 10 is a substrate, 11 is an optical waveguide, 12 is a phase change material layer, 13 is an insulating coating layer, 14 is a heater (a, b, c, d is a heater optional position), 15 is a TSV (a, b, c, d is a TSV optional position), 16 is a height difference between the phase change material layer 12 and the heater 14, 17 is a horizontal distance between the phase change material layer 12 and the heater 14, and 18 and 19 are surrounding structure heaters.
Detailed Description
Example 1:
as an example, a non-vertical indirect electric heating device compatible with the standard process of silicon optical integration has the following structures from bottom to top: optical waveguide 11, phase change material layer 12, insulating cladding 13, heater 14, through silicon via 15 (TSV), as shown in fig. 1.
The structure size of the optical waveguide 11 of the non-vertical indirect electric heating structure can be set according to the actual application requirement; preferably, the waveguide structure can be one or more of a strip waveguide, a ridge waveguide, a slit waveguide and the like, the total height of the waveguide structure can be 0.05-3 mu m, the width of the waveguide structure can be 0.05-10 mu m, and the width of the slit can be 0.01-0.5 mu m; more preferably, in this embodiment, the waveguide structure is a strip waveguide having an overall height of 0.34 μm and a width of 1.3 μm.
The material of the optical waveguide 11 must have a transparent window in the optical wavelength band (e.g., C-band and L-band), and Si can be used as the waveguide material 3 N 4 、Si、LiNbO 3 And the like. Preferably, in this embodiment, the material of the optical waveguide 11 is Si 3 N 4 。
The optical waveguide 11 may use Si 3 N 4 The wafer is prepared by ultraviolet lithography, electron beam Exposure (EBL), reactive Ion Etching (RIE), inductively coupled plasma etching (ICP) and the like.
The phase change material layer 12 of the non-vertical indirect electric heating structure can be a simple phase change material film or array, and can also be a phase change material device with a special structure or function. Preferably, in this embodiment, the phase change material layer 12 is crystalline Ge 2 Sb 2 Te 5 (GST) film.
The phase change material layer 12 may cover the optical waveguide 11 or may be embedded in the optical waveguide 11. Preferably, in this embodiment, the phase change material layer 12 covers the optical waveguide 11.
The phase change material layer 12 may be subjected to at least one of light absorption generated heat, electric generated joule heat, direct heating by a thermal field, and the like to achieve reversible state transition of the material. Preferably, in this embodiment, the phase change material layer 12 is crystalline Ge 2 Sb 2 Te 5 (GST) film.
The thickness, width and height of the phase change material layer 12 can be set according to practical application requirements; preferably, the thickness of the phase change material layer 12 may be 0.4-100 nm, the width may be 0.05-50 μm, and the length may be 0.05-50 μm; more preferably, in this embodiment, the phase change material layer 12 has a thickness of 10 nm, a width of 1.3 μm and a length of 1.3 μm.
The phase change material layer 12 may be prepared by using a sputtering method, an evaporation method, a chemical vapor deposition method (CVD), a plasma enhanced chemical vapor deposition method (PECVD), a low pressure chemical vapor deposition method (LPCVD), a metal compound vapor deposition Method (MOCVD), a molecular beam epitaxy Method (MBE), an atomic vapor deposition method (AVD), an atomic layer deposition method (ALD), or the like.
The insulating coating layer 13 of the non-vertical indirect electric heating structure is ITO or Al 2 O 3 、SiO 2 、HfO 2 And the insulating materials which are transparent or weakly absorbed in the light wave bands, are less influenced by light intensity and temperature and have higher heat conductivity. The insulating coating 13 material may be formed by a method such as PVD, PECVD, ALD. Preferably, in the present embodiment, the insulating coating layer 13 is made of SiO by PVD 2 。
The thickness of the insulating coating layer 13 may be 0.4-2000 nm, and the width and length are not smaller than the ranges of the heater 14 and the TSV 15; preferably, in this embodiment, the thickness of the insulating coating layer 13 is 500 a nm a.
The heater 14 and the TSV15 of the non-vertical indirect electric heating structure are located above the phase change material layer 12 in the insulating cladding 13, not perpendicular to the phase change material layer 12, and perpendicular or parallel to the waveguide 11, as shown in fig. 2.
The heater 14 and the TSV15 may be located at one side of the phase change material layer 12 (e.g., 15a, 14b, 15c or 15a, 14a, 15b in fig. 2), so as to implement a basic thermal regulation function; it is also possible to locate on both sides of the phase change material layer 12 (e.g. 15a, 14b, 15c, 15b, 14c, 15d or 15a, 14a, 15b, 15c, 14d, 15d in fig. 2) or around the phase change material layer 12 (15 a, 15d, 18, 19 in fig. 3) to achieve a more uniform thermal regulation function. Both ends of the heater 14 are connected to the TSVs 15, respectively, to constitute an electrical circuit. Preferably, in the present embodiment, the heater 14 and the TSV15 adopt a surrounding structure (15 a, 15d, 18, 19).
The heater 14 material must have high resistivity, thermal conductivity and melting point, and may be TiN, W, pd, or the like. Preferably, in this embodiment, the heater 14 material is TiN.
The thickness, width and height of the heater 14 can be set according to the actual application requirements; preferably, the heater 14 may have a thickness of 0.05-10 μm, a width of 0.05-10 μm, and a length of 0.05-50 μm; more preferably, in this embodiment, the thickness of the surrounding structure heater 18, 19 is 120 nm, the width is 3 μm, and the single-side length is 9 μm.
The heater 14 may be manufactured by using a sputtering method, an evaporation method, a chemical vapor deposition method (CVD), a plasma enhanced chemical vapor deposition method (PECVD), a low pressure chemical vapor deposition method (LPCVD), a metal compound vapor deposition Method (MOCVD), a molecular beam epitaxy Method (MBE), an atomic vapor deposition method (AVD), an atomic layer deposition method (ALD), or the like.
The height difference 16 between the phase change material layer 12 and the heater 14 of the non-vertical indirect electric heating structure may be 0 to 1 μm (preferably 0.1 to 1 μm), and the horizontal pitch 17 may be 0 to 10 μm (preferably 0.1 to 10 μm). Preferably, in this embodiment, the height difference 16 is 500 nm and the horizontal spacing 17 is 850 nm.
Specifically, the non-vertical indirect electric heating structure is connected to an external control circuit through the TSV15, and the control electric pulse enters the heaters 18, 19 through the TSV15a (or 15 d) and generates Joule heat; since the structures of the heaters 18 and 19 are identical, the heaters 18 and 19 will generate the same heat distribution and heat diffusion, so that the phase change material layer 12 is heated uniformly in all directions, and crystallization or amorphization can be completed in most areas. In addition, the heating structure does not introduce extra loss, and the process is simple and compatible with the standard silicon light integration process.
Example 2:
as an example, a non-vertical indirect electric heating structure compatible with the standard process of silicon optical integration is as follows: optical waveguide 11, phase change material layer 12, insulating cladding 13, heater 14, through silicon via 15 (TSV), as shown in fig. 4.
The structure size of the optical waveguide 11 of the non-vertical indirect electric heating structure can be set according to the actual application requirement; preferably, the waveguide structure can be one or more of a strip waveguide, a ridge waveguide, a slit waveguide and the like, the total height of the waveguide structure can be 0.05-3 mu m, the width of the waveguide structure can be 0.05-10 mu m, and the width of the slit can be 0.01-0.5 mu m; more preferably, in this embodiment, the waveguide structure is a slot waveguide, the overall height is 0.34 μm, the width is 1.3 μm, and the slot width is 0.1 μm.
The material of the slit waveguide 11 must have a transparent window in the optical wavelength band (e.g., C-band and L-band), and Si can be used as the waveguide material 3 N 4 、Si、LiNbO 3 And the like. Preferably, in this embodiment, the material of the slot waveguide 11 is Si 3 N 4 。
The slit waveguide 11 may use Si 3 N 4 The wafer is prepared by ultraviolet lithography, electron beam Exposure (EBL), reactive Ion Etching (RIE), inductively coupled plasma etching (ICP) and the like.
The phase change material layer 12 of the non-vertical indirect electric heating structure can be a simple phase change material film or array, and can also be a phase change material device with a special structure or function. Preferably, in this embodiment, the phase change material layer 12 is crystalline Ge 2 Sb 2 Te 5 (GST) film.
The phase change material layer 12 may be covered on the waveguide on the side close to or far from the heater in the slit waveguide 11, or may be embedded inside the slit of the optical waveguide 11, as shown in fig. 4. Preferably, in this embodiment, the phase change material layer 12 is embedded inside the slit of the optical waveguide 11.
The phase change material layer 12 may be subjected to at least one of light absorption generated heat, electric generated joule heat, direct heating by a thermal field, and the like to achieve reversible state transition of the material. Preferably, in this embodiment, the phase change material layer 12 is crystalline Ge 2 Sb 2 Te 5 (GST) film.
The thickness, width and height of the phase change material layer 12 can be set according to practical application requirements; preferably, the thickness of the phase change material layer 12 may be 0.4-100 nm, the width may be 0.05-50 μm, and the length may be 0.05-50 μm; more preferably, in this embodiment, the phase change material layer 12 has a thickness of 10 nm, a width of 0.1 μm and a length of 1.3 μm.
The phase change material layer 12 may be prepared by using a sputtering method, an evaporation method, a chemical vapor deposition method (CVD), a plasma enhanced chemical vapor deposition method (PECVD), a low pressure chemical vapor deposition method (LPCVD), a metal compound vapor deposition Method (MOCVD), a molecular beam epitaxy Method (MBE), an atomic vapor deposition method (AVD), an atomic layer deposition method (ALD), or the like.
The insulating coating layer 13 of the non-vertical indirect electric heating structure is ITO or Al 2 O 3 、SiO 2 、HfO 2 And the insulating materials which are transparent or weakly absorbed in the light wave bands, are less influenced by light intensity and temperature and have higher heat conductivity. The insulating coating 13 material may be formed by a method such as PVD, PECVD, ALD. Preferably, in the present embodiment, the insulating coating layer 13 is made of SiO by PVD 2 。
The thickness of the insulating coating layer 13 may be 0.4-2000 nm, and the width and length are not smaller than the ranges of the heater 14 and the TSV 15; preferably, in this embodiment, the thickness of the insulating coating layer 13 is 500 a nm a.
The heater 14 and the TSV15 of the non-vertical indirect electric heating structure are located above the phase change material layer 12 in the insulating clad layer 13, are not perpendicular to the phase change material layer 12, and are parallel to the waveguide 11, as shown in fig. 5.
The heater 14 and the TSV15 may be located at one side of the phase change material layer 12 (e.g., 15a, 14b, 15c or 15a, 14a, 15b in fig. 2), so as to implement a basic thermal regulation function; it is also possible to locate on both sides of the phase change material layer 12 (e.g. 15a, 14b, 15c, 15b, 14c, 15d or 15a, 14a, 15b, 15c, 14d, 15d in fig. 2) or around the phase change material layer 12 (15 a, 15d, 18, 19 in fig. 3) to achieve a more uniform thermal regulation function. Both ends of the heater 14 are connected to the TSVs 15, respectively, to constitute an electrical circuit. Preferably, in the present embodiment, the heater 14 and the TSV15 adopt a single-sided structure (15 a, 14b, 15 c), as shown in fig. 5.
The heater 14 material must have high resistivity, thermal conductivity and melting point, and may be TiN, W, pd, or the like. Preferably, in this embodiment, the heater 14 material is TiN.
The thickness, width and height of the heater 14 can be set according to the actual application requirements; preferably, the heater 14 may have a thickness of 0.05-10 μm, a width of 0.05-10 μm, and a length of 0.05-50 μm; more preferably, in this embodiment, the heater 14b has a thickness of 120 nm, a width of 3 μm and a single-side length of 9 μm.
The heater 14 may be manufactured by using a sputtering method, an evaporation method, a chemical vapor deposition method (CVD), a plasma enhanced chemical vapor deposition method (PECVD), a low pressure chemical vapor deposition method (LPCVD), a metal compound vapor deposition Method (MOCVD), a molecular beam epitaxy Method (MBE), an atomic vapor deposition method (AVD), an atomic layer deposition method (ALD), or the like.
The height difference 16 between the phase change material layer 12 and the heater 14 of the non-vertical indirect electric heating structure may be 0-1 μm, and the horizontal pitch 17 may be 0-10 μm. Preferably, in this embodiment, the height difference 16 is 500 nm and the horizontal spacing 17 is 850 nm.
Specifically, the non-vertical indirect electric heating structure is connected to an external control circuit through the TSV15, and controls electric pulses to enter the heater 14b through the TSV15a (or 15 c) and generate joule heat, so that the phase change material layer 12 is heated uniformly in a single-side direction, and crystallization or amorphization can be completed in most regions. In addition, the heating structure does not introduce extra loss, and the process is simple and compatible with the standard silicon light integration process.
Example 3:
as an example, a non-vertical indirect electric heating structure compatible with the standard process of silicon optical integration is as follows: optical waveguide 11, phase change material layer 12, insulating clad layer 13, heater 14, through silicon via 15 (TSV), as shown in fig. 6.
The structure size of the optical waveguide 11 of the non-vertical indirect electric heating structure can be set according to the actual application requirement; preferably, the waveguide structure can be one or more of a strip waveguide, a ridge waveguide, a slit waveguide and the like, the total height of the waveguide structure can be 0.05-3 mu m, the width of the waveguide structure can be 0.05-10 mu m, and the width of the slit can be 0.01-0.5 mu m; more preferably, in this embodiment, the waveguide structure is a ridge waveguide having an overall height of 0.34 μm, a width of 1.3 μm, and a ridge height of 0.17 μm.
The material of the optical waveguide 11 must have a transparent window in the optical wavelength band (e.g., C-band and L-band), and Si can be used as the waveguide material 3 N 4 、Si、LiNbO 3 And the like. Preferably, in this embodiment, the material of the optical waveguide 11 is Si 3 N 4 。
The optical waveguide 11 may use Si 3 N 4 The wafer is prepared by ultraviolet lithography, electron beam Exposure (EBL), reactive Ion Etching (RIE), inductively coupled plasma etching (ICP) and the like.
The phase change material layer 12 of the non-vertical indirect electric heating structure can be a simple phase change material film or array, and can also be a phase change material device with a special structure or function. Preferably, in this embodiment, the phase change material layer 12 is crystalline Ge 2 Sb 2 Te 5 (GST) film.
The phase change material layer 12 may be covered on the ridge waveguide 11 or embedded inside the ridge waveguide 11. Preferably, in this embodiment, the phase change material layer 12 covers the ridge waveguide 11.
The phase change material layer 12 may be subjected to at least one of light absorption generated heat, electric generated joule heat, direct heating by a thermal field, and the like to achieve reversible state transition of the material. Preferably, in this embodiment, the phase change material layer 12 is crystalline Ge 2 Sb 2 Te 5 (GST) film.
The thickness, width and height of the phase change material layer 12 can be set according to practical application requirements; preferably, the thickness of the phase change material layer 12 may be 0.4-100 nm, the width may be 0.05-50 μm, and the length may be 0.05-50 μm; more preferably, in this embodiment, the phase change material layer 12 has a thickness of 10 nm, a width of 0.1 μm and a length of 1.3 μm.
The phase change material layer 12 may be prepared by using a sputtering method, an evaporation method, a chemical vapor deposition method (CVD), a plasma enhanced chemical vapor deposition method (PECVD), a low pressure chemical vapor deposition method (LPCVD), a metal compound vapor deposition Method (MOCVD), a molecular beam epitaxy Method (MBE), an atomic vapor deposition method (AVD), an atomic layer deposition method (ALD), or the like.
The insulating coating layer 13 of the non-vertical indirect electric heating structure is ITO or Al 2 O 3 、SiO 2 、HfO 2 And the insulating materials which are transparent or weakly absorbed in the light wave bands, are less influenced by light intensity and temperature and have higher heat conductivity. The insulating coating 13 material may be formed by a method such as PVD, PECVD, ALD. Preferably, in the present embodiment, the insulating coating layer 13 is made of SiO by PVD 2 。
The thickness of the insulating coating layer 13 may be 0.4-2000 nm, and the width and length are not smaller than the ranges of the heater 14 and the TSV 15; preferably, in this embodiment, the thickness of the insulating coating layer 13 is 500 a nm a.
The heater 14 and the TSV15 of the non-vertical indirect electric heating structure are located above the phase change material layer 12 in the insulating clad layer 13, not perpendicular to the phase change material layer 12, and perpendicular to the waveguide 11, as shown in fig. 7.
The heater 14 and the TSV15 may be located at one side of the phase change material layer 12 (e.g., 15a, 14b, 15c or 15a, 14a, 15b in fig. 2), so as to implement a basic thermal regulation function; it is also possible to locate on both sides of the phase change material layer 12 (e.g. 15a, 14b, 15c, 15b, 14c, 15d or 15a, 14a, 15b, 15c, 14d, 15d in fig. 2) or around the phase change material layer 12 (15 a, 15d, 18, 19 in fig. 3) to achieve a more uniform thermal regulation function. Both ends of the heater 14 are connected to the TSVs 15, respectively, to constitute an electrical circuit. Preferably, in the present embodiment, the heater 14 and the TSV15 adopt a double-sided structure (15 a, 14a, 15b, 15c, 14d, 15 d), as shown in fig. 7.
The heater 14 material must have high resistivity, thermal conductivity and melting point, and may be TiN, W, pd, or the like. Preferably, in this embodiment, the heater 14 material is TiN.
The thickness, width and height of the heater 14 can be set according to the actual application requirements; preferably, the heater 14 may have a thickness of 0.05-10 μm, a width of 0.05-10 μm, and a length of 0.05-50 μm; more preferably, in this embodiment, the heater 14a, 14d has a thickness of 120 nm a, a width of 3 μm and a single side length of 9 μm.
The heater 14 may be manufactured by using a sputtering method, an evaporation method, a chemical vapor deposition method (CVD), a plasma enhanced chemical vapor deposition method (PECVD), a low pressure chemical vapor deposition method (LPCVD), a metal compound vapor deposition Method (MOCVD), a molecular beam epitaxy Method (MBE), an atomic vapor deposition method (AVD), an atomic layer deposition method (ALD), or the like.
The height difference 16 between the phase change material layer 12 and the heater 14 of the non-vertical indirect electric heating structure may be 0-1 μm, and the horizontal pitch 17 may be 0-10 μm. Preferably, in this embodiment, the height difference 16 is 500 nm and the horizontal spacing 17 is 850 nm.
Specifically, the non-vertical indirect electric heating structure is connected to an external control circuit through the TSV15, and controls electric pulses to enter the heater 14 through the TSV15 and generate joule heat, so that the phase change material layer 12 is heated uniformly in both side directions, and crystallization or amorphization can be completed in most areas. In addition, the heating structure does not introduce extra loss, and the process is simple and compatible with the standard silicon light integration process.
Claims (7)
1. A non-vertical indirect electric heating device compatible with a silicon light integration standard process, which is characterized in that: a substrate (10), an optical waveguide (11), a phase change material layer (12), an insulating coating layer (13), a heater (14) and a TSV (15); the phase change material layer (12) is square, the optical waveguide (11) is strip-shaped, and the phase change material layer (12) is positioned above the middle position of the optical waveguide (11) or embedded into the optical waveguide (11); and the two are coated at the middle position of the insulating coating layer (13); the TSV (15) is arranged above the heater (14), and two ends of the heater are respectively connected with the TSV to form an electric loop; the two are arranged at the side of the insulating coating layer (13), namely the heater (14) and the TSV (15) are arranged above the phase change material layer (12) in the insulating coating layer and are vertical or parallel to the optical waveguide (11); the bottom of the phase change material layer is vertically spaced from the phase change material layer (12), and the inner side of the phase change material layer is horizontally spaced from the side of the phase change material layer (12) (17); the TSV (15) and the heater (14) are 1 group, 2 group, 3 group or 4 group, and are correspondingly distributed on one side, two sides, three sides or four sides of the phase change material layer (12); the heater (14) forms a symmetrical or surrounding structure;
the optical waveguide (11) is one of a strip waveguide, a ridge waveguide and a slit waveguide; the material of the optical waveguide has a transparent window in the optical band and Si is used 3 N 4 、Si、LiNbO 3 One of the following;
the heater (14) material has higher resistivity, thermal conductivity and melting point and is selected from one or more of TiN, W and Pd.
2. Non-vertical indirect electric heating device according to claim 1, characterized in that the phase change material layer (12) is a thin film or array of phase change materials or a phase change material device with a specific structure or function; the phase change material layer is directly heated by at least one of heat generated by light absorption, joule heat generated by electricity and a thermal field to realize reversible state transition of the material.
3. Non-vertical indirect electric heating device according to claim 2, characterized in that the insulating coating (13) material is ITO, al 2 O 3 、SiO 2 Or HfO 2 。
4. A non-vertical indirect electric heating device according to claim 3, characterized in that the height of the optical waveguide (11) is 0.05-3 μm, the width of the waveguide structure is 0.05-10 μm, and the slit width is 0.01-0.5 μm.
5. The non-vertical indirect electric heating device according to claim 4, wherein the phase change material layer (12) has a thickness of 0.4-100 nm, a width of 0.05-50 μm and a length of 0.05-50 μm.
6. The non-vertical indirect electric heating device according to claim 4, wherein the heater (14) has a thickness of 0.05-10 μm, a width of 0.05-10 μm, and a length of 0.05-50 μm.
7. Non-vertical indirect electric heating device according to claim 4, characterized in that the phase change material layer (12)
The height difference (16) between the heater and the heater (14) is 0-1 μm, and the horizontal distance (17) is 0-10 μm.
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