CN108279511A - A kind of electrooptic modulator based on phase-change material - Google Patents
A kind of electrooptic modulator based on phase-change material Download PDFInfo
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- CN108279511A CN108279511A CN201711453218.2A CN201711453218A CN108279511A CN 108279511 A CN108279511 A CN 108279511A CN 201711453218 A CN201711453218 A CN 201711453218A CN 108279511 A CN108279511 A CN 108279511A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
- G02F1/0113—Glass-based, e.g. silica-based, optical waveguides
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- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
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Abstract
The invention discloses a kind of electrooptic modulators based on phase-change material,Including SOI Substrate,Feature is that horizontally disposed on SOI Substrate have the input waveguide to connect successively,Hybrid waveguide and output waveguide,The hybrid waveguide is from top to bottom successively by silicon ducting layer,GST layers of phase-change material and copper electrode layer are formed by stacking,The silicon dioxide layer that SOI Substrate includes the silicon substrate that a layer thickness is 250nm and a layer thickness is 2um,The thickness of input waveguide and the thickness of output waveguide are 250nm,Width is 400nm,The thickness of hybrid waveguide is 290nm,Width is 400nm,Silicon ducting layer side forms the silicon thin film that thickness is 10nm by selective etch,Advantage is small integrated convenient on piece with size,Energy expenditure is low,Wider bandwidth of operation,Higher modulation depth and lower insertion loss.
Description
Technical field
The present invention relates to a kind of electrooptic modulators, more particularly, to a kind of electrooptic modulator based on phase-change material.
Background technology
As people are to information processing rate, message transmission rate, the continuous improvement of the requirements such as data storage capacity, information
Network is increased with astonishing speed.In order to meet large capacity, superfast information interconnection and intercommunication demand, it is excellent to generally require performance
Electro-optical signal processing apparatus more.Electrooptic modulator realizes that information turns between electric signal and optical signal in being transmitted as optic communication
The core devices changed cause the great interest of scientific research personnel with wide development and application prospect.Existing silicon substrate electricity
Optical modulator regulates and controls to realize to signal light using the plasma dispersion effect of highly doped silicon or the fermi level of graphene
Modulation, however needs lasting energy input that could keep modulation condition in modulated process, in this process, along with compared with
Big energy expenditure is unfavorable for the realization of low energy-consumption electronic device.
Since GST (Ge2Sb2Te5) since phase-change material is found, be obtained for extensively in fields such as electronics, physics, materials
General application.Extremely successful commercial applications are especially obtained in optical storage field.Phase-change material GST has excellent light
Learn characteristic and electrology characteristic.Crystalline state and amorphous character difference be huge, phase rate of transformation of nanosecond and does not need volume
Outer energy supply can keep phase to stablize, these advantages make phase-change material GST become the ideal of novel electro-optic modulator and wait
Material selection.But any correlative study report about the electrooptic modulator based on phase-change material is disclosed not yet both at home and abroad at present
Road.
Invention content
Technical problem to be solved by the invention is to provide with size it is small it is integrated convenient on piece, energy expenditure is low, wider
Bandwidth of operation, higher modulation depth and lower insertion loss the electrooptic modulator based on phase-change material.
Technical solution is used by the present invention solves above-mentioned technical problem：A kind of Electro-optical Modulation based on phase-change material
Device, including SOI Substrate, it is horizontally disposed on the SOI Substrate to have the input waveguide to connect successively, hybrid waveguide and defeated
Go out waveguide, the hybrid waveguide is formed by stacking by silicon ducting layer, GST layers of phase-change material and copper electrode layer successively from top to bottom.
The silicon dioxide layer that the SOI Substrate includes the silicon substrate that a layer thickness is 250nm and a layer thickness is 2um,
The silicon dioxide layer is arranged in the silicon substrate upper surface, the input waveguide, the silicon ducting layer and described
Output waveguide be arranged in the upper surface of the silicon dioxide layer.
It is 400nm that the thickness of the input waveguide and the thickness of the output waveguide, which are 250nm, width,.
The thickness of the hybrid waveguide is 290nm, width 400nm, at the middle and upper levels the thickness of the copper electrode layer
Degree is 10nm, and the thickness of GST layers of phase-change material described in centre is 30nm, and the thickness of the silicon waveguide described in bottom is 250nm.
The silicon ducting layer side forms the silicon thin film that thickness is 10nm by selective etch, and the silicon thin film exists
It is grounded as electrode after n-type doping with the silicon ducting layer.
The total length of the electrooptic modulator is 0.5um.
Novel electro-optic modulator operation principle based on phase-change material：Phase-change material GST is utilized under amorphous state, crystalline state
With the refractive index and the absorption coefficient of light to differ greatly.When GST is amorphous state, refractive index and absorption coefficient are smaller.Mixing
Waveguide and optical signal interaction are small, and for hybrid waveguide as Medium Wave Guide, optical signal loss is extremely low.Wherein, most optical signal
It is distributed in bottom silicon waveguide, only a little optical signal is distributed in GST layers.Therefore, most input optical signal can be steady
Output waveguide is reached by hybrid waveguide.When GST is converted to crystalline state from amorphous state, refractive index and absorption coefficient drastically increase
Greatly, optical signal is distributed in GST layers and increases, and the interaction of hybrid waveguide and optical signal greatly reinforces, and optical signal loss is substantially
Degree increases.So the optical signal in input waveguide only reaches output waveguide at least partially through hybrid waveguide.Therefore, by mixed
The electrode application electric impulse signal appropriate that multiplex leads both ends realizes that GST is converted between crystalline state, amorphous state, to realize telecommunications
Number arrive optical signal modulation.
Compared with the prior art, the advantages of the present invention are as follows：The invention discloses a kind of electric light tune based on phase-change material
Device processed, the electrooptic modulator are made of input waveguide, output waveguide and hybrid waveguide (Si-GST-Cu).Hybrid waveguide by Si,
Phase-change material GST（Ge2Sb2Te5）It is constituted with Cu materials, phase-change material GST is distributed among Si waveguides and Cu electrodes, is in one
The structure of a class sandwich.When applying different voltage signal excitation phase-change material GST by electrode, phase occurs for GST phases
The transformation answered causes the variation for exporting optical signal so that the refractive index of hybrid waveguide and absorption coefficient can also change therewith,
The final modulation for realizing optical signal.Advantage is as follows：
1, compared with traditional electrooptic modulator, the novel electro-optic modulator based on phase-change material has larger imaginary index
Contrast greatly reduces device size so that device architecture is compacter, and size is only 0.2um2, integrated convenient on piece.This
Outside, entire element manufacturing is simple and CMOS technique compatible, is advantageously implemented industrialization.
2, phase-change material GST is fast in the conversion speed of different phase（Nanosecond）So that novel electro-optic modulator have compared with
High modulation rate.
3, the novel electro-optic modulator based on phase-change material, phase-change material GST are not necessarily to additional energy under crystalline state, amorphous state
Amount supply, you can ensure the stability of phase.Energy is only consumed when phase-change material phase is converted, and energy expenditure is extremely low for Asia
The extremely low energy expenditure of nJ/bit magnitudes, device meets the trend that device develops to low-power consumption.
4, the bandwidth of operation of the novel electro-optic modulator based on phase-change material is more than 100nm, in 1500nm-1600nm wavelength
There are lower insertion loss, higher modulation depth in range（About 5.4dB/um）, there is broad prospect of application.
In conclusion the present invention is based on the electrooptic modulator of phase-change material, which has size is small to be convenient for piece
The features such as upper bandwidth of operation integrated, energy expenditure is low, wider, higher modulation depth, lower insertion loss.In addition, should
The making of device is simple, and CMOS technique compatible is advantageously implemented industrialization, is very suitable for applying to the following supercomputer sum number
According to center, there is wide development and application prospect.
Description of the drawings
Fig. 1 is that the present invention is based on the structural schematic diagrams of the electrooptic modulator of phase-change material；
Fig. 2 is the specific production process of electrooptic modulator of the present invention.
Specific implementation mode
Below in conjunction with attached drawing embodiment, present invention is further described in detail.
Specific embodiment
A kind of electrooptic modulator based on phase-change material, including SOI Substrate, as shown in Figure 1, SOI Substrate upper edge level side
To the input waveguide 3 to connect successively, hybrid waveguide and output waveguide 5 is provided with, hybrid waveguide is from top to bottom successively by silicon waveguide
Layer 4, phase-change material GST layers 7 and copper electrode layer 8 are formed by stacking.
In this particular embodiment, SOI Substrate includes silicon substrate 1 that a layer thickness is 250nm and a layer thickness is 2um's
Silicon dioxide layer 2, the setting of silicon dioxide layer 2 are arranged in 1 upper surface of silicon substrate, input waveguide 3, silicon ducting layer 4 and output waveguide 5
In the upper surface of silicon dioxide layer 2.The thickness of input waveguide 3 and the thickness of output waveguide 5 are that 250nm, width are
400nm.The thickness of hybrid waveguide is 290nm, width 400nm, and the wherein thickness of upper copper electrode layer 8 is 10nm, intermediate
The thickness of phase-change material GST layers 7 is 30nm, and the thickness of bottom silicon waveguide 4 is 250nm.4 side of silicon waveguide passes through selective quarter
Erosion forms the silicon thin film 6 that thickness is 10nm, and silicon thin film 6 is grounded after n-type doping as electrode with silicon ducting layer 4.Electric light
The total length of modulator is 0.5um.
The major parameter of this modulator is analyzed：By simulation calculation, the parameters of this electrooptic modulator, device can be obtained
Part size is small, only 0.2um2；Low-power consumption（Amorphous state changes energy consumption 163pJ to crystalline state, and crystalline state to amorphous state consumes energy
194pJ）；Modulation bandwidth is more than 100nm；In 1500nm-1600nm wavelength bands, modulation depth is about 11dB/um and whole
A device insertion loss is less than 0.5dB.
The introducing of phase-change material GST effectively strengthens the interaction of light and waveguide, contracts while improving modulation depth
Small device size.GST has the refractive index to differ greatly and absorption coefficient in crystalline state, amorphous state.GST is in crystalline state and amorphous state
It converts, can be realized by applying electric pulse or light pulse excitation between two kinds of phases.And there is GST the phase of nanosecond to turn
Become speed.GST is converted from amorphous state to crystalline state, can make it by applying appropriate electric pulse or light pulse excitation heating GST
Temperature is higher than its crystallization temperature（413K）And it is less than its fusing point（819K）It realizes.GST is transformed into amorphous state, Ke Yitong from crystalline state
It crosses and applies appropriate electric pulse or light pulse excitation heating GST, its temperature is made to be higher than its fusing point（819K）And quenching is realized rapidly.This
Outside, GST has good non-volatile, and being not required to additional energy can keep phase to stablize.The variation of GST phases causes mixed recharge
Refractive index and the absorption coefficient of light variation led, and then lead to the variation for exporting optical signal, to realize the modulation to optical signal.
The detailed manufacturing process of the electrooptic modulator of entire phase-change material is as shown in Fig. 2, be as follows：
1, standard SOI substrates, drying are cleaned first；
2, first time spin coating electronic pastes；
3, first round electron beam lithography is carried out, to form waveguide pattern on standard SOI；
4, it performs etching, to form waveguide on SOI chips；
5, second of spin coating electronic pastes on sample carry out the second wheel electron beam lithography and selective etch, to form mixed recharge
Lead the silicon thin film 6 of side；Next n-type doping is carried out to silicon ducting layer 4 in hybrid waveguide and the silicon thin film of side 6, to make
Electrode；
6, third time spin coating electronic pastes carry out third round electron beam lithography, to form the window of next step material deposition；
7, it is sequentially depositing phase-change material GST layers 7 and metallic copper electrode layer 8 using magnetron sputtering, is finally peeled away out device.
Certainly, above description is not limitation of the present invention, and the present invention is also not limited to the example above.The art
Those of ordinary skill is in the essential scope of the present invention, the variations, modifications, additions or substitutions made, and should also belong to the present invention's
Protection category.
Claims (6)
1. a kind of electrooptic modulator based on phase-change material, including SOI Substrate, it is characterised in that：The SOI Substrate upper edge water
Square to being provided with the input waveguide to connect successively, hybrid waveguide and output waveguide, the hybrid waveguide is from top to bottom successively
It is formed by stacking by silicon ducting layer, GST layers of phase-change material and copper electrode layer.
2. a kind of electrooptic modulator based on phase-change material according to claim 1, it is characterised in that：The SOI bases
The silicon dioxide layer that piece includes the silicon substrate that a layer thickness is 250nm and a layer thickness is 2um, silicon dioxide layer setting
In the silicon substrate upper surface, the input waveguide, the silicon ducting layer and the output waveguide are arranged described
Silicon dioxide layer upper surface.
3. a kind of electrooptic modulator based on phase-change material according to claim 2, it is characterised in that：The incoming wave
It is 400nm that the thickness of the thickness and the output waveguide led, which is 250nm, width,.
4. a kind of electrooptic modulator based on phase-change material according to claim 3, it is characterised in that：The mixed recharge
The thickness led is 290nm, width 400nm, and the thickness of the copper electrode layer is 10nm, the phase described in centre at the middle and upper levels
Become the thickness of GST layers of material as 30nm, the thickness of the silicon waveguide described in bottom is 250nm.
5. a kind of electrooptic modulator based on phase-change material according to claim 4, it is characterised in that：The silicon waveguide
Layer side forms the silicon thin film that thickness is 10nm by selective etch, and the silicon thin film passes through with the silicon ducting layer
It is grounded as electrode after n-type doping.
6. a kind of electrooptic modulator based on phase-change material according to any one of claims 1-5, it is characterised in that：Institute
The total length for the electrooptic modulator stated is 0.5um.
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109655975A (en) * | 2019-01-16 | 2019-04-19 | 浙江大学 | A kind of erasable integrated light guide monitoring devices based on phase-change material |
| CN109870833A (en) * | 2019-02-28 | 2019-06-11 | 上海交通大学 | Based on silicon-phase-change material hybrid integrated silicon waveguide multi-stage non-volatile optical attenuator |
| CN109917565A (en) * | 2019-02-18 | 2019-06-21 | 上海交通大学 | Based on the multistage optical attenuator of silicon-phase-change material hybrid integrated |
| CN110187521A (en) * | 2019-05-15 | 2019-08-30 | 上海交通大学 | Resonant cavity assists phase transformation reconfigurable optical signal processing chip |
| CN111061115A (en) * | 2020-01-16 | 2020-04-24 | 桂林电子科技大学 | Electro-optical hybrid half adder based on surface plasma silicon-based waveguide and control method thereof |
| CN112394542A (en) * | 2020-11-16 | 2021-02-23 | 浙江大学 | Integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor |
| CN112748493A (en) * | 2019-10-30 | 2021-05-04 | 中移(苏州)软件技术有限公司 | Polarization device |
| CN113376870A (en) * | 2021-05-19 | 2021-09-10 | 杭州电子科技大学 | Space light type electro-optical modulation device based on phase change material and manufacturing method thereof |
| CN114815324A (en) * | 2022-06-28 | 2022-07-29 | 中山大学 | Polarization regulation and control device based on silicon-based phase-change material |
| CN114839715A (en) * | 2022-04-22 | 2022-08-02 | 江南大学 | Non-volatile phase change reconfigurable silicon-based mode converter and manufacturing method thereof |
| CN115032819A (en) * | 2022-08-15 | 2022-09-09 | 之江实验室 | Co-packaged light engine system and silicon-based modulator for phase change material array thereof |
| CN115308847A (en) * | 2022-07-11 | 2022-11-08 | 宁波大学 | Dual-mode interference 2X 2 optical waveguide switch based on phase change material |
| CN115421246A (en) * | 2022-11-03 | 2022-12-02 | 之江实验室 | Intensity modulator based on GST nanodots on SOI |
| CN117631336A (en) * | 2023-12-29 | 2024-03-01 | 光本位科技(苏州)有限公司 | Optical waveguide and preparation method thereof |
| CN117706811A (en) * | 2023-12-29 | 2024-03-15 | 光本位科技(苏州)有限公司 | Optical waveguide and preparation method thereof |
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Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109655975B (en) * | 2019-01-16 | 2020-12-08 | 浙江大学 | Erasable integrated optical waveguide monitoring device based on phase-change material |
| CN109655975A (en) * | 2019-01-16 | 2019-04-19 | 浙江大学 | A kind of erasable integrated light guide monitoring devices based on phase-change material |
| CN109917565A (en) * | 2019-02-18 | 2019-06-21 | 上海交通大学 | Based on the multistage optical attenuator of silicon-phase-change material hybrid integrated |
| CN109870833A (en) * | 2019-02-28 | 2019-06-11 | 上海交通大学 | Based on silicon-phase-change material hybrid integrated silicon waveguide multi-stage non-volatile optical attenuator |
| CN110187521A (en) * | 2019-05-15 | 2019-08-30 | 上海交通大学 | Resonant cavity assists phase transformation reconfigurable optical signal processing chip |
| CN112748493A (en) * | 2019-10-30 | 2021-05-04 | 中移(苏州)软件技术有限公司 | Polarization device |
| CN111061115A (en) * | 2020-01-16 | 2020-04-24 | 桂林电子科技大学 | Electro-optical hybrid half adder based on surface plasma silicon-based waveguide and control method thereof |
| CN111061115B (en) * | 2020-01-16 | 2022-06-21 | 桂林电子科技大学 | Electro-optical hybrid half adder based on surface plasma silicon-based waveguide and control method thereof |
| CN112394542A (en) * | 2020-11-16 | 2021-02-23 | 浙江大学 | Integrated optical phase shifter based on two-dimensional material/phase change material/semiconductor |
| CN113376870B (en) * | 2021-05-19 | 2023-08-15 | 杭州电子科技大学 | Spatial light type electro-optic modulation device based on phase change material and manufacturing method thereof |
| CN113376870A (en) * | 2021-05-19 | 2021-09-10 | 杭州电子科技大学 | Space light type electro-optical modulation device based on phase change material and manufacturing method thereof |
| CN114839715A (en) * | 2022-04-22 | 2022-08-02 | 江南大学 | Non-volatile phase change reconfigurable silicon-based mode converter and manufacturing method thereof |
| CN114815324A (en) * | 2022-06-28 | 2022-07-29 | 中山大学 | Polarization regulation and control device based on silicon-based phase-change material |
| CN114815324B (en) * | 2022-06-28 | 2022-10-28 | 中山大学 | Polarization regulation and control device based on silicon-based phase-change material |
| CN115308847A (en) * | 2022-07-11 | 2022-11-08 | 宁波大学 | Dual-mode interference 2X 2 optical waveguide switch based on phase change material |
| CN115308847B (en) * | 2022-07-11 | 2023-10-24 | 宁波大学 | Dual-mode interference 2X 2 optical waveguide switch based on phase change material |
| CN115032819A (en) * | 2022-08-15 | 2022-09-09 | 之江实验室 | Co-packaged light engine system and silicon-based modulator for phase change material array thereof |
| CN115421246A (en) * | 2022-11-03 | 2022-12-02 | 之江实验室 | Intensity modulator based on GST nanodots on SOI |
| CN115421246B (en) * | 2022-11-03 | 2023-03-28 | 之江实验室 | Intensity modulator based on GST nanodots on SOI |
| CN117631336A (en) * | 2023-12-29 | 2024-03-01 | 光本位科技(苏州)有限公司 | Optical waveguide and preparation method thereof |
| CN117706811A (en) * | 2023-12-29 | 2024-03-15 | 光本位科技(苏州)有限公司 | Optical waveguide and preparation method thereof |
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Application publication date: 20180713 |
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